WO2006075511A1 - GaN系半導体発光素子及びその製造方法 - Google Patents
GaN系半導体発光素子及びその製造方法 Download PDFInfo
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- WO2006075511A1 WO2006075511A1 PCT/JP2005/023760 JP2005023760W WO2006075511A1 WO 2006075511 A1 WO2006075511 A1 WO 2006075511A1 JP 2005023760 W JP2005023760 W JP 2005023760W WO 2006075511 A1 WO2006075511 A1 WO 2006075511A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 514
- 238000000034 method Methods 0.000 title claims description 106
- 150000001875 compounds Chemical class 0.000 claims abstract description 338
- 239000000758 substrate Substances 0.000 claims description 91
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 85
- 238000004519 manufacturing process Methods 0.000 claims description 58
- 229910052594 sapphire Inorganic materials 0.000 claims description 54
- 239000010980 sapphire Substances 0.000 claims description 54
- 229910010093 LiAlO Inorganic materials 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 238000000407 epitaxy Methods 0.000 claims description 8
- 230000010287 polarization Effects 0.000 abstract description 17
- 230000002269 spontaneous effect Effects 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 617
- 239000007789 gas Substances 0.000 description 59
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 56
- 239000013078 crystal Substances 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 230000007547 defect Effects 0.000 description 19
- 229910052733 gallium Inorganic materials 0.000 description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 12
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 241000700560 Molluscum contagiosum virus Species 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Definitions
- GaN-based semiconductor light emitting device and manufacturing method thereof
- the present invention relates to a GaN-based semiconductor light emitting device and a method for manufacturing the same.
- the lattice constant of the InGaN crystal is A little larger than the lattice constant of GaN crystal. Therefore, an n-type GaN layer whose top surface is parallel to the C surface, an active layer made of InGaN whose top surface is parallel to the C surface, and a p-type GaN layer whose top surface is parallel to the C surface are stacked. If so, a compression pressure is applied to the active layer. As a result, piezo spontaneous polarization occurs in the thickness direction of the active layer, and the emission wavelength from such a light emitting diode shifts, and the phenomena such as increase in operating voltage, decrease in light emission efficiency, and luminance saturation occur.
- LED light emitting diode
- a technique for suppressing the phenomenon in which piezo spontaneous polarization occurs in the thickness direction of the active layer is disclosed in Japanese Patent Application Laid-Open No. 2003-158294.
- the top surface of the active layer is, for example, parallel to the A plane, or parallel to the M plane, or alternatively ⁇ 2-1_14 ⁇ When parallel to the surface, piezo spontaneous polarization is said to occur in a direction perpendicular to the thickness direction of the active layer.
- the dislocation proceeds only in the lateral direction along with the growth of the GaN-based compound semiconductor layer, and in the longitudinal direction (thickness direction) of the GaN-based compound semiconductor layer. Since it does not penetrate, a GaN-based compound semiconductor layer with a low crystal defect density can be obtained.
- One force of such ELOG method is disclosed in, for example, Japanese Patent Application Laid-Open No. 2002-100579.
- growth nuclei made of nitride semiconductor power are formed in periodic stripes, islands, or lattices on a different substrate different from the nitride semiconductor.
- a protective film is formed above the growth nucleus, and a nitride semiconductor layer is further grown.
- Patent Document 1 JP 2003-158294 A
- Patent Document 2 JP 2002-100579
- the GaN-based compound semiconductor layer formed on the C-plane of the sapphire substrate based on the ELOG growth method has a C-plane on the top surface and an A-plane on the side surface. That is, the top surface of the GaN-based compound semiconductor layer is parallel to the ⁇ 0001 ⁇ plane of the GaN-based compound semiconductor crystal, and the side surface of the GaN-based compound semiconductor layer is the GaN-based compound semiconductor crystal.
- ⁇ h "k i I> plane is expressed as hk-il> direction and h-kil> direction in this specification.
- the first object of the present invention is to suppress the occurrence of piezo spontaneous polarization in the thickness direction of the active layer, and to reduce the driving voltage of the light emitting diode.
- An object is to provide an aN-based semiconductor light-emitting device.
- the second object of the present invention is to provide a method for manufacturing a GaN-based semiconductor light-emitting element capable of forming a GaN-based compound semiconductor layer with a low crystal defect density. is there.
- a GaN-based semiconductor light-emitting device for achieving the first object is
- A a first GaN-based compound semiconductor layer having a top surface parallel to the A surface and having the first conductivity type
- the GaN-based semiconductor light-emitting device for achieving the first object described above,
- a compound semiconductor has a cation (for example, Ga) and an anion (for example, N) force, Ga is +3 valence, and N is +5 valence or -3 valence. And the part where many Ga atoms and N atoms appear and the part where few atoms exist is called a polar face. For example, in the C + plane, the Ga plane and N plane appear alternately and grow at this time, and a directivity appears between the + valent cation and the monovalent anion perpendicular to the plane. This is polarity.
- the arrangement of atoms of Ga and N atoms has objectivity, and it is said that it is nonpolar because there is no bias or directionality of one atom. Is called a nonpolar surface.
- the nonpolar plane unlike the A plane, there is no symmetry perpendicular to the plane of the cation or anion.
- nonpolar surfaces in the present specification include an A plane that is a ⁇ 11-20 ⁇ plane, an M plane that is a ⁇ 1-100 ⁇ plane, and a ⁇ ll — 2n ⁇ plane. be able to.
- the ⁇ l l _ 2n ⁇ plane means a nonpolar plane that forms 40 degrees with respect to the C plane.
- piezo spontaneous polarization does not occur in the thickness direction of the active layer. Only the spontaneous polarization occurs in a direction substantially perpendicular to the thickness direction of the active layer (for example, 90 degrees or 90 degrees ⁇ 5 degrees).
- the first base GaN-based compound semiconductor layer is formed on the top surface and the mask layer of the first base GaN-based compound semiconductor layer, and the second base GaN-based compound semiconductor layer whose top surface is parallel to the A-plane. Laterally epitaxy from the top surface, and then (e) On the second underlayer GaN compound semiconductor layer,
- a first GaN-based compound semiconductor layer having a top surface parallel to the A surface and having the first conductivity type
- a contact layer made of a GaN-based compound semiconductor and having a top surface parallel to the A surface is sequentially formed.
- Each step is provided at least.
- the first base GaN-based compound semiconductor layer is formed on the top surface and the mask layer of the first base GaN-based compound semiconductor layer with the second base GaN-based compound semiconductor layer being parallel to the M-plane. The top surface force of the lateral growth, and then
- a first GaN-based compound semiconductor layer having a top surface parallel to the M-plane and having a first conductivity type
- a contact layer made of a GaN-based compound semiconductor and having a top surface parallel to the M-plane is sequentially formed.
- Each step is provided at least.
- step (b) Manufacturing method of GaN-based semiconductor light-emitting device according to first or second aspect of the present invention (hereinafter, these are collectively referred to simply as a manufacturing method of a GaN-based semiconductor light-emitting device of the present invention)
- the first underlying GaN-based compound semiconductor layer is laterally epitaxially grown from each seed layer, and the opposing side surfaces of the first underlying GaN-based compound semiconductor layers are in contact with each other.
- the lateral epitaxial growth was stopped,
- the second underlying GaN-based compound semiconductor layer is laterally epitaxially grown, and the third underlying GaN-based compound semiconductor layer is laterally expanded from the opposing side surfaces of the first underlying GaN-based compound semiconductor layer.
- Directional epitaxial growth is preferred, but not limited to this.
- the distance between the opposing side surfaces of the first underlayer GaN-based compound semiconductor layer is L, and the formation pitch of the plurality of seed layers is P.
- GaN from sapphire substrate and LiAlO substrate
- the second electrode is formed on the contact layer after forming the contact layer.
- the projected image of the second electrode may be included in the projected image of the portion of the second underlying GaN-based compound semiconductor layer formed on the top surface of the first underlying GaN-based compound semiconductor layer.
- the seed layer is shaped like a band with a width W and the mask is masked.
- the planar shape of the layer is a strip of width W, the formation pitch of multiple seed layers is P, and the width of the second electrode
- the GaN-based compound semiconductor layer after forming the second GaN-based compound semiconductor layer, the seed layer, the first base layer It is preferable that the GaN-based compound semiconductor layer (and the third base GaN-based compound semiconductor layer) be peeled off from the R surface of the sapphire substrate or the LiAlO substrate.
- the seed layer, the first underlayer GaN It is preferable to remove the first compound semiconductor layer, the (third base GaN compound semiconductor layer), the second base GaN compound semiconductor layer, and the mask layer to expose the first GaN compound semiconductor layer. More preferably, it is more preferable to form the first electrode on the exposed first GaN-based compound semiconductor layer.
- the lateral epitaxial growth of the first underlying GaN-based compound semiconductor layer is performed using organic gallium. It is preferably carried out by a metal organic chemical vapor deposition method (MOCVD method) using a source gas and a nitrogen source gas.
- MOCVD method metal organic chemical vapor deposition method
- the V / III ratio that is the supply molar ratio of the nitrogen source gas to the organic gallium source gas is 1 ⁇ 10 to 3 ⁇ 10 3 , preferably 1 ⁇ 10 2 to 1 ⁇ 10 3
- a sapphire substrate or a LiAlO substrate lcm 2 per supply moles of organic gallium source gas per minute 0. 5 X 10- 6 mole 'cm- 2' min 1 to 5 X 10- 6 mol •
- the pressure of the nitrogen source gas is set to 1 X 10 3 Pa to 3 X 10 4 Pa, preferably 1 X It is preferably 10 3 Pa to 1 ⁇ 10 4 Pa.
- the pressure of the nitrogen source gas refers to the pressure in the region where the GaN-based compound semiconductor layer is formed in the deposition chamber for forming the GaN-based compound semiconductor layer in the MOCVD apparatus.
- nitrogen source gas pressure is used in the same meaning.
- the second underlying GaN-based compound semiconductor layer (and the third underlying GaN)
- the lateral epitaxial growth of the compound-based compound semiconductor layer is preferably performed by metal organic chemical vapor deposition (MOCVD) method using an organic gallium source gas and a nitrogen source gas.
- MOCVD metal organic chemical vapor deposition
- the supply molar ratio of the nitrogen source gas to the organic gallium source gas is It is preferred that the V / III ratio is 1 X 10 to 3 X 10 3 , preferably 1 X 10 2 to 1 X 10 3 , or in this case, the metal organic chemical vapor deposition method is used.
- the second base GaN compound semiconductor layer and the third base GaN compound semiconductor layer Directional epitaxial growth can be performed reliably and stably.
- the planar shape of the seed layer and the mask layer is a band shape. It is desirable that the projected image of the seed layer and the projected image of the mask layer be parallel. Further, it is desirable that the projected image of the seed layer is included in the projected image of the mask layer. Further, when the width of the seed layer is W and the width of the mask layer is W, 1 ⁇ W / W, preferably 1 ⁇ / W
- the crystal defect density in the obtained second underlayer GaN-based compound semiconductor layer can be surely reduced.
- the extending direction of the band-shaped seed layer is preferably 1-100> direction.
- the present invention includes a method for manufacturing a GaN-based semiconductor light-emitting device of the present invention including the various preferred embodiments and configurations described above (further, these may be collectively referred to simply as “the present invention” hereinafter).
- the GaN-based compound semiconductor composing the contact layer is In Ga N (including A1
- the value of X satisfies, for example, 0.01 ⁇ X ⁇ 0.3.
- the contact layer may or may not be doped with impurities as impurities.
- the first conductivity type is n-type and the second conductivity type is p-type.
- the Mg atom concentration in the contact layer is preferably l ⁇ 10 19 / cm 3 to 1 ⁇ 10 21 / cm 3 .
- the second GaN-based compound semiconductor layer has the first conductivity type n-type and the second conductivity type p-type.
- the Mg atom concentration in is preferably from 1 ⁇ 10 19 / cm 3 to 1 ⁇ 10 21 / cm 3 , and preferably from 5 ⁇ 10 19 / cm 3 to 2 ⁇ 10 2 ° / cm 3 .
- the active layer is a single In GaN layer or ZGaN layer.
- Quantum well structure or multiple layers of 2 to 5 In GaN layers / GaN layers
- the value of Y satisfies, for example, 0.13 ⁇ Y ⁇ 0.20 when the emission wavelength power is 40 nm to 470 nm, and 0.20 ⁇ Y ⁇ when the emission wavelength is 500 nm to 530 nm. It is desirable to satisfy 0.30.
- Lateral epitaxial growth means the ELOG growth method (Epitaxial Lateral OverGrowh method).
- a surface growth if the top surface is parallel to the A surface, it is referred to as “A surface growth”, and if the top surface is parallel to the M surface, it is referred to as “M surface growth”, and the top surface is parallel to the C surface. If there is, it is called “C-plane growth”.
- the A plane, M plane, ⁇ 11 2n ⁇ plane, C plane, R plane, and S plane in the hexagonal system are shown in FIGS. 6A to 6D, respectively.
- the top surface of the GaN-based compound semiconductor layer parallel to the R surface, the A surface, the M surface, the nonpolar surface, etc. of the sapphire substrate is within an off-angle soil of 5 (degrees). A face is included.
- first GaN-based compound semiconductor layer the active layer, the second GaN-based compound semiconductor layer, and the first base GaN-based compound semiconductor layer
- Compound semiconductor layer, second underlayer GaN-based compound semiconductor layer and third underlayer GaN-based compound semiconductor layer include GaN layer, AlGaN layer, InGaN layer, AlInGaN layer, and boron (B) atoms in these compound semiconductor layers.
- a GaN-based compound semiconductor layer containing thallium (T1) atoms can be given.
- the seed layer made of a GaN-based compound semiconductor is an R surface of a sapphire substrate or LiAlO.
- the GaN compound semiconductor layer is formed by lithography and etching technology. It can be obtained by patterning a compound semiconductor layer.
- the seed layer having the GaN compound semiconductor force is formed on the R surface of the sapphire substrate or the LiAlO substrate, and the GaN compound semiconductor layer (for example, GaN whose top surface is parallel to the A surface).
- a GaN layer whose top surface is parallel to the M-plane), and a non-growth layer (a layer on which the GaN-based compound semiconductor layer does not grow) is formed on the GaN layer, followed by lithography and etching.
- This non-growth layer can be patterned by technology to expose the GaN-based compound semiconductor layer.
- the material constituting the non-growth layer may be appropriately selected from the materials constituting the mask layer described later. Examples of the method for forming the GaN-based compound semiconductor layer constituting the seed layer include MOCVD, molecular beam epitaxy (MBE), and hydride vapor phase epitaxy in which halogen contributes to transport or reaction.
- GaN-based compound semiconductor layer does not occur on the mask layer.
- the second underlying GaN-based compound semiconductor layer begins to be formed on the top surface of the first underlying GaN-based compound semiconductor layer, and then extends over the mask layer.
- the specific structure of the mask layer includes a silicon oxide layer (SiO layer), a silicon nitride layer (SiN layer), a TaO layer, a ZrO layer, an A1N layer, an AlO layer, and a laminated structure of these layers (for example, from below) ,
- high-melting-point metal material layers such as silicon oxide layers and silicon nitride layers), Ni layers, and tungsten layers, and chemical vapor deposition (CVD), or vacuum deposition and sputtering, for example. It can be formed by the physical vapor deposition method (PVD method).
- the first GaN-based compound semiconductor layer, the active layer, the second GaN-based compound semiconductor layer, and the contact layer examples include MOCVD method, MBE method, hydride vapor phase growth method in which halogen contributes to transport or reaction.
- organic gallium source gases include trimethyl gallium (TMG) gas and triethyl gallium (TEG ) Gas, and the ability to list ammonia gas and hydrazine gas as nitrogen source gas.
- TMG trimethyl gallium
- TAG triethyl gallium
- the combination of the first conductivity type and the second conductivity type may include a combination of n type and p type, or a combination of p type and n type.
- silicon (Si) may be added as an n-type impurity
- p-type Add magnesium (Mg) as an impurity.
- trimethylaluminum (TMA) gas can be used as the A1 source, and trimethylindium (TM I) Use gas.
- monosilane gas (SiH gas) can be used as the Si source, and cyclopentadenyl magnesium gas can be used as the Mg source.
- Ge, Se, Sn, C, Ti can be cited as n-type impurities in addition to Si, and Zn, Cd, Be, Ca, Ba, other than Mg as p-type impurities. Yes.
- the second electrode when the second conductivity type is p-type, is platinum (Pt), nickel (Ni), gold (Au), and silver if palladium. It is preferable to have a single-layer configuration or a multi-layer configuration including at least one metal selected from the group consisting of (Ag).
- the first electrode is gold (Au), A1 (aluminum), Ti (titanium), tungsten (W), Cu (copper), Zn (zinc), tin ( It is desirable to have a single layer configuration or a multilayer configuration containing at least one metal selected from the group consisting of Sn) and Indium (In), for example, Ti / Au, Ti / Al, Ti / Pt The power to illustrate / Au S.
- the first electrode and the second electrode can be formed by a PVD method such as vacuum evaporation.
- the seed layer, the first underlying GaN-based compound semiconductor layer (and the third underlying GaN-based compound semiconductor layer) The sapphire substrate is peeled off from the R-plane or LiAlO substrate via a sapphire substrate or LiAlO substrate, the sapphire substrate or LiAlO substrate and the seed layer, the first underlying GaN compound semiconductor layer (and the third And a method of irradiating a laser beam (for example, a KrF excimer laser beam having a wavelength of 248 nm) to the interface with the underlying GaN-based compound semiconductor layer.
- a laser beam for example, a KrF excimer laser beam having a wavelength of 248 nm
- the compound semiconductor layer, the second base GaN compound semiconductor layer, and the mask layer etching method, polishing method, etching method and combined polishing method can be mentioned.
- Examples of the GaN-based semiconductor light-emitting device of the present invention or a light-emitting device obtained based on the manufacturing method thereof include a light-emitting diode (LED) and a semiconductor laser (LD).
- LED light-emitting diode
- LD semiconductor laser
- the laminated structure of the GaN-based compound semiconductor layer has a light-emitting diode structure or a laser structure, there are no particular restrictions on the type and composition of the GaN-based compound semiconductor, and there are no particular restrictions on the structure and configuration of the GaN-based compound semiconductor layer. No.
- each GaN-based compound semiconductor layer constituting the GaN-based semiconductor light-emitting element is parallel to the A-plane, the M-plane, or the nonpolar plane. Even when zo spontaneous polarization occurs, piezo spontaneous polarization does not occur in the thickness direction of the active layer, and piezo spontaneous polarization occurs in a direction substantially perpendicular to the thickness direction of the active layer. It is possible to suppress the occurrence of a shift in the wavelength of light emitted from the diode, or the occurrence of phenomena such as an increase in operating voltage, a decrease in light emission efficiency, and luminance saturation. In addition, since the contact layer is formed between the second GaN-based compound semiconductor layer formed on the active layer and the second electrode, the drive voltage can be reliably reduced.
- the A-plane growth and M-plane growth of a GaN compound semiconductor layer can be performed on the R surface of a sapphire substrate or a LiAlO substrate.
- the obtained GaN compound semiconductor layer has a crystal defect. Is extremely contained, and there are irregularities on the surface. Therefore, if an active layer or the like having a GaN-based compound semiconductor layer force is formed on the GaN-based compound semiconductor layer as it is, the unevenness is further enlarged, and the light emission of the obtained GaN-based semiconductor light-emitting element may be extremely weakened. is there.
- the first underlying GaN-based compound semiconductor layer is epitaxially grown in the lateral direction, basically, the first underlying GaN-based compound semiconductor layer having an extremely low crystal defect density can be obtained.
- the portion of the first base GaN compound semiconductor layer grown on the seed layer The crystal defect density is high. Therefore, in the method for manufacturing a GaN-based semiconductor light-emitting device of the present invention, the top surface of the portion of the first base GaN-based compound semiconductor layer grown on the seed layer where the crystal defect density is high is covered with a mask layer. In this state, a second base GaN compound semiconductor layer is formed on the top surface of the first base GaN compound semiconductor layer. As a result, the crystal defect density in the obtained second underlying GaN-based compound semiconductor layer is extremely low as a whole.
- the top surface of the second underlayer GaN-based compound semiconductor layer obtained in this way is parallel to the A surface, M surface, or nonpolar surface, and the side surface is the C surface. Therefore, the first GaN compound semiconductor layer, the active layer made of the GaN compound semiconductor, the second GaN compound semiconductor layer, and the contact layer are sequentially formed on the second base GaN compound semiconductor layer. At the same time, these top surfaces are parallel to the A, M, or nonpolar surface, and the side surfaces (for example, C surface) are perpendicular to the interface.
- piezo spontaneous polarization occurs in the active layer, piezo spontaneous polarization does not occur in the thickness direction of the active layer, and piezo spontaneous polarization occurs in a direction substantially perpendicular to the thickness direction of the active layer. Therefore, it is possible to suppress the occurrence of a shift in the emission wavelength, or the occurrence of phenomena such as an increase in operating voltage, a decrease in light emission efficiency, and luminance saturation.
- the thermal expansion coefficient in the c-axis direction of the GaN-based compound semiconductor crystal is extremely smaller than the thermal expansion coefficient of a sapphire substrate or the like. Therefore, the GaN-based compound semiconductor layer may be peeled off from the sapphire substrate or the like due to a large change in temperature. Therefore, in step (b), the first underlying GaN-based compound semiconductor layer is grown by the seed layer force laterally epitaxially, and the opposing side surfaces of each first underlying GaN-based compound semiconductor layer are in contact with each other.
- the GaN-based compound semiconductor layer is made of sapphire due to the difference in thermal expansion coefficient when the sapphire substrate or the like is cooled to form a mask layer. It is possible to reliably prevent peeling from the substrate etc.
- FIG. 1 is a schematic partial cross-sectional view of a GaN-based semiconductor light-emitting element of Example 1 or Example 4.
- FIG. 2A is a schematic partial end view of a sapphire substrate and the like for explaining a method for manufacturing a GaN-based semiconductor light-emitting element of Example 1 or Example 4.
- FIG. 2B is a schematic partial end view of a sapphire substrate and the like for explaining a method for manufacturing the GaN-based semiconductor light-emitting element of Example 1 or Example 4.
- FIG. 2C is a schematic partial end view of a sapphire substrate and the like for explaining a method for manufacturing the GaN-based semiconductor light-emitting element of Example 1 or Example 4.
- FIG. 2D is a schematic partial end view of a sapphire substrate and the like for illustrating a method for manufacturing the GaN-based semiconductor light-emitting element of Example 1 or Example 4.
- FIG. 3A is a schematic partial end view of a sapphire substrate and the like for illustrating a method for manufacturing a GaN-based semiconductor light-emitting element of Example 2 or Example 5.
- FIG. 3B is a schematic partial end view of a sapphire substrate and the like for illustrating a method for manufacturing the GaN-based semiconductor light-emitting element of Example 2 or Example 5.
- FIG. 3C is a schematic partial end view of a sapphire substrate and the like for explaining a method for manufacturing the GaN-based semiconductor light-emitting element of Example 2 or Example 5.
- FIG. 3D is a schematic partial end view of a sapphire substrate and the like for illustrating a method for manufacturing the GaN-based semiconductor light-emitting element of Example 2 or Example 5.
- FIG. 4 shows the number of quantum wells in the quantum wells constituting the active layer in Example 2.
- FIG. 6 is a graph showing the results of examining the relationship of driving voltage of a GaN-based semiconductor light emitting device.
- FIG. 5 is a schematic partial end view of a sapphire substrate and the like for explaining a modification of the method for forming a seed layer in the method for manufacturing a GaN-based semiconductor light emitting device of Examples 1 to 6. It is.
- FIG. 6A is a diagram for explaining each surface in a hexagonal crystal.
- FIG. 6B is a diagram for explaining each surface in a hexagonal crystal.
- FIG. 6C is a diagram for explaining each surface in a hexagonal crystal.
- FIG. 6D is a diagram for explaining each surface in a hexagonal crystal.
- Example 1 relates to a GaN-based semiconductor light-emitting device according to the first and third aspects of the present invention, and a method for manufacturing a GaN-based semiconductor light-emitting device according to the first aspect of the present invention.
- FIG. 1 shows a schematic cross-sectional view of the GaN-based semiconductor light-emitting device of Example 1, more specifically, a light-emitting diode (LED).
- LED light-emitting diode
- the GaN-based semiconductor light-emitting device of Example 1 has a structure in which a first GaN-based compound semiconductor layer 21, an active layer 22, a second GaN-based compound semiconductor layer 23, and a contact layer 24 are stacked.
- the top surface of the first GaN-based compound semiconductor layer 21 is parallel to the A plane or the nonpolar plane, and has the first conductivity type (specifically, n-type).
- the active layer 22 is formed on the first Ga N-based compound semiconductor layer 21, and the top surface thereof is parallel to the A plane or the nonpolar plane.
- the In GaN layer ZGaN layer (Y 0.20) multiple quantum well structure
- the second GaN-based compound semiconductor layer 23 is formed on the active layer 22, and the top surface thereof is parallel to the A-plane or the nonpolar plane, and the second conductivity type (specifically, p-type). ). More specifically, the Mg atom concentration in the second GaN-based compound semiconductor layer 23 is 8 ⁇ 10 19 / cm 3 .
- the top surface is parallel to the A surface or nonpolar surface.
- the Mg atom concentration in the contact layer 24 is 5 ⁇ 10 19 / cm 3 .
- Example 1 the first electrode 25 is formed on the first GaN-based compound semiconductor layer 21, and the second electrode 26 is formed on the contact layer 24.
- FIGS. 2A to 2D are schematic partial end views of a sapphire substrate and the like.
- the gas flow rate (unit: SLM) in the following description of each embodiment performs the described based at, by multiplying the coefficient to the gas flow rate, supply the number of moles of gas (unit: 10-6 mole 'cm- 2 -min— 1 ) can be obtained.
- the gas flow rate 1SLM is 4. a 5 X 10- 2 mole 'min- 1, coefficients may further be obtained by dividing this value by equivalence area S, in Example 1, an equivalent The area S was 60 cm 2 .
- a plurality of seed layers 11 made of a GaN-based compound semiconductor and spaced apart from each other are formed on the R surface of a sapphire substrate 10 (indicated by the substrate 10 in the drawing) (see FIG. 2A).
- the R plane of the sapphire substrate 10 is the ⁇ 1 ⁇ 102 ⁇ plane.
- the sapphire substrate 10 is carried into a MOCV D apparatus, trimethyl gallium (TMG) gas is used as the organic gallium source gas, and ammonia gas is used as the nitrogen source gas.
- TMG trimethyl gallium
- a semiconductor layer is formed on the R surface of the sapphire substrate 10. Specifically, a GaN layer whose top surface is parallel to the A surface is formed on the R surface of the sapphire substrate 10. However, this GaN-based compound semiconductor layer has high density defects such as stacking faults.
- the sapphire substrate 10 is unloaded from the MOCVD apparatus, and based on the lithography technique and the RIE technique, the GaN-based compound semiconductor layer is patterned so that the planar shape becomes a band shape, thereby providing a plurality of separated seed layers 11.
- seed layer 1 1 extends in the direction of 1-100>, and the planar shape of seed layer 1 1 is formed into a band with a width W to form a plurality of seed layers
- a first underlayer GaN compound semiconductor layer 12 whose top surface 12 A is parallel to the A surface and side surface 12 B is parallel to the C surface is laterally epitaxially grown from each seed layer 11 (See Figure 2B).
- the lateral epitaxial growth of the first underlying GaN-based compound semiconductor layer 12 is performed. Cancel.
- the sapphire substrate 10 is again carried into the MOC VD apparatus, based on the MOCVD method using trimethylgallium (TMG) gas as the organic gallium source gas and ammonia gas as the nitrogen source gas, A first underlying GaN-based compound semiconductor layer 12 whose top surface 12A is parallel to the A surface and whose side surface 12B is parallel to the C surface is laterally epitaxially grown from each seed layer 11.
- TMG trimethylgallium
- V / III ratio about 500
- Nitrogen source gas pressure l X 10 4 Pa
- the top surface of the first underlayer GaN-based compound semiconductor layer 12 was an S plane, a ⁇ 1-101 ⁇ plane.
- the sapphire substrate 10 is unloaded from the MOCVD apparatus, and a mask layer 13 is formed on the top surface 12A of the first base GaN compound semiconductor layer 12 located above the seed layer 11 (see FIG. 2C).
- the mask layer 13 has a laminated structure of a silicon oxide layer and a silicon nitride layer from the bottom, and can be formed based on a plasma CVD method, a lithography technique, and a wet etching technique.
- the width W of the mask layer 13 whose planar shape is a band is 16 ⁇ . That is
- the center line of the mask layer 13 is positioned directly above the center line of the seed layer 11, and the center line of the mask layer 13 is not positioned directly above the center line of the seed layer 11. May be located. That is, depending on the growth conditions of the first underlayer GaN-based compound semiconductor layer 12, crystal defects in the portion of the first underlayer GaN-based compound semiconductor layer 12 located on the seed layer 11 may cause the centerline of the seed layer 11.
- the first GaN-based compound semiconductor layer 12 may be generated more in the 0001> direction than the first underlayer, or may be generated more in the ⁇ 000 _ 1> direction.
- the center line of the mask layer 13 is positioned at a position other than directly above the center line of the layer 11, and crystal defects in the portion of the first underlayer GaN-based compound semiconductor layer 12 positioned on the seed layer 11 are removed. Adjust the position of the mask layer 13 to cover as much as possible, and form the mask layer 13
- the first underlayer GaN-based compound semiconductor layer 12 located on the seed layer 11 If it is difficult to identify crystal defects in the film, the first underlayer GaN-based compound semiconductor layer 12 having a thickness of about 1 ⁇ m is further formed under the film formation conditions illustrated in Table 2 below. Pits are likely to occur in the crystal defect portion of the underlying GaN-based compound semiconductor layer 12, and the crystal defect can be easily identified.
- Nitrogen source gas pressure 9 X 10 4 Pa
- the second base GaN system in which the top surface 14A is parallel to the A surface and the side surface 14B is parallel to the C surface.
- the compound semiconductor layer 14 is laterally epitaxially grown from the top surface 12A of the first underlayer GaN-based compound semiconductor layer 12 (see FIG. 2D).
- the sapphire substrate 10 is carried into the MOCVD apparatus again, and the top surface 14 is formed based on the MOCVD method using trimethylgallium (TMG) gas as the organic gallium source gas and ammonia gas as the nitrogen source gas.
- TMG trimethylgallium
- a second base GaN compound semiconductor layer 14 having A parallel to the A plane and side 14B parallel to the C plane is formed from the top surface 12A of the first base GaN compound semiconductor layer 12.
- the second underlayer GaN-based compound semiconductor layer 14 is grown in the lateral direction. Deposition conditions should be the same as in Table 1.
- a GaN-based compound semiconductor layer can be formed.
- the first GaN compound semiconductor layer 21 (specifically, for example, on the second base GaN compound semiconductor layer 14 without lowering the sapphire substrate 10 to a low temperature) GaN layer doped with Si, about lxm thick), active layer 22 made of GaN compound semiconductor (specifically, for example, InGaN layer with thickness of 2 to 3 nm / thickness 7
- MQW structure Multiple quantum well structure with GaN layers of ⁇ 20nm stacked, second GaN compound semiconductor layer 23 (specifically, for example, A1 with a thickness of 5-20nm doped with Mg GaN layer, Mg-doped lOOnm thick GaN layer), contact layer 24 (specifically, Mg-doped lOnm InGaN layer, for example), in order, well-known MOCV
- the first GaN-based compound semiconductor layer is desirably formed under the growth conditions shown in Table 3 below in which crystal defects are reduced.
- Nitrogen source gas pressure 5 X 10 4 Pa or more
- the second electrode 26 is formed on the contact layer 24.
- the second electrode 26 has a laminated structure of N ring / Ag layer / Au layer, and can be formed by a vacuum deposition method.
- the second electrode 26 is formed above the portion of the second base GaN-based compound semiconductor layer 14 formed on the top surface 12A of the first base GaN-based compound semiconductor layer 12.
- the projected image of the second electrode 26 is included in the projected image of the second underlying GaN-based compound semiconductor layer 14 formed on the top surface 12A of the first underlying GaN-based compound semiconductor layer 12.
- the planar shape of the second electrode 26 can be a band, a circle, an ellipse, etc., and the width W of the second electrode 26 (with the same width as the mask layer 13).
- the second electrode 26 is preferably not formed on the portion of the second underlying GaN-based compound semiconductor layer 14 located above the mask layer 13, and moreover, the second underlying GaN-based compound semiconductor layer It is even more preferable to form a layer that straddles the junction between 14 and the second underlayer GaN-based compound semiconductor layer 14.
- a support layer is formed on the entire surface, or a support is bonded to the entire surface, and then the seed layer 11 and the first underlying GaN-based compound semiconductor layer 12 are peeled off from the R surface of the sapphire substrate 10.
- a laser beam for example, a KrF excimer laser beam having a wavelength of 248 nm
- the seed layer 11, the first underlying GaN-based compound semiconductor layer 12, the mask layer 13, and the second underlying GaN-based compound semiconductor layer 14 are removed by a combination of an etching method and a polishing method.
- the first electrode 25 has a laminated structure of T ring / Au layer. Further, a transparent electrode (not shown) made of ITO connected to the first electrode 25 is formed.
- the laminated structure composed of the first GaN compound semiconductor layer 21, the active layer 22 made of GaN compound semiconductor, the second GaN compound semiconductor layer 23, and the contact layer 24 is cleaved and cut to obtain an LED chip, By mounting with the transparent electrode on top, wiring, and resin molding, a GaN-based semiconductor light-emitting device consisting of a bullet-type LED device can be obtained.
- the emission wavelength in the LED device can be controlled in the range of 450 nm to 530 nm.
- the first GaN-based compound semiconductor layer 21 is an AlGaN layer
- the active layer 22 is a GaN layer or an InGaN layer or an AlInGaN layer
- the second GaN-based compound semiconductor layer 23 is an AlGaN layer.
- Example 2 is a modification of Example 1.
- Example 1 when the opposing side surfaces 12 B of the respective first base GaN-based compound semiconductor layers 12 are in contact with each other, the lateral epitaxial layer of the first base GaN-based compound semiconductor layer 12 is used. Cancels the axial growth. By the way, the thermal expansion coefficient in the c-axis direction of the GaN-based compound semiconductor crystal is extremely smaller than the thermal expansion coefficient of the sapphire substrate. Therefore, there is a possibility that the seed layer 11 and the first underlying GaN-based compound semiconductor layer 12 may be separated from the sapphire substrate 10 due to a large change in temperature.
- Example 2 in a step similar to [Step-110] of Example 1, the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, Before the opposing side surfaces 12B of the first underlying GaN-based compound semiconductor layers 12 come into contact with each other, the lateral epitaxial growth is stopped. Further, in the same process as [Process 130] in Example 1, the second underlying GaN-based compound semiconductor layer 14 is laterally epitaxially grown. At the same time, the third underlying GaN-based compound semiconductor layer 15 is laterally epitaxially grown from the opposing side surface 12B of the first underlying GaN-based compound semiconductor layer 12.
- the first underlying GaN-based compound is caused by the difference in thermal expansion coefficient. It is possible to reliably prevent the semiconductor layer 12 and the seed layer 11 from being separated from the sapphire substrate 10.
- FIGS. 3A to 3D are schematic partial end views of a sapphire substrate and the like.
- a plurality of seed layers 11 separated by GaN-based compound semiconductor force are formed on the R surface of the sapphire substrate 10 (see FIG. 3A).
- a first base GaN compound semiconductor layer 12 having a top surface 12A parallel to the A surface and a side surface 12B parallel to the C surface is laterally epitaxially grown from each seed layer 11 (see FIG. 3B). ).
- the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, and the opposing side surfaces 12B of each first underlying GaN-based compound semiconductor layer 12 are mutually connected. Stop lateral epitaxy growth before touching.
- the same step as [Step 110] in Example 1 is performed. However, the film formation time is shorter than that in Example 1.
- a mask layer 13 is formed on the top surface 12A of the first underlying GaN-based compound semiconductor layer 12 located above the seed layer 11 (FIG. (See 3C).
- the second underlying GaN-based compound semiconductor layer 14 is laterally epitaxially grown on the top surface 12A force of the first underlying GaN-based compound semiconductor layer 12, From the opposite side surface 12B of the first underlayer GaN-based compound semiconductor layer 12, a third underlayer GaN-based compound semiconductor layer 15 is epitaxially grown in the lateral direction (see FIG. 3D). See).
- a GaN-based compound semiconductor layer can be formed.
- Example 1 Thereafter, the same steps as [Step 140] to [Step 170] in Example 1 are performed, whereby a GaN-based semiconductor light-emitting element can be obtained.
- Fig. 4 shows the results of examining the relationship between the number of quantum wells constituting the active layer and the drive voltage in Example 2.
- a GaN-based semiconductor light-emitting device in which the formation of the contact layer 24 was omitted was manufactured as a comparative example 2.
- the drive voltage of the GaN-based semiconductor light-emitting device obtained in Example 2 and Comparative Example 2 (the specifications of the quantum well constituting the active layer 22 are as described above, and the number of quantum wells is 3) is approximately
- the results of measurement at a current density of 50 A / cm 2 were as shown in Table 4 below.
- the third embodiment is a modification of the second embodiment.
- the main difference between Example 3 and Example 2 is that the film formation conditions when the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, particularly the nitrogen source gas, The supply amount is increased.
- Example 3 First, in the same manner as in [Step-100] in Example 1, a plurality of seed layers 11 made of GaN-based compound semiconductor and spaced apart are formed on the R surface of the sapphire substrate 10.
- a plurality of seed layers 11 made of GaN-based compound semiconductor and spaced apart are formed on the R surface of the sapphire substrate 10.
- the first underlayer GaN compound semiconductor layer 12 in which the top surface 12A is parallel to the A surface and the side surface 12B is parallel to the C surface is used for each seed. Grow laterally from layer 11. Even in Example 3, the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, and the opposing side surface 12B of each first underlying GaN-based compound semiconductor layer 12 has Stop lateral epitaxial growth before touching each other. Specifically, the same step as [Step 110] in Example 1 is performed. However, the film formation time is shorter than that in Example 1.
- the obtained first underlayer GaN-based compound semiconductor layer 12 has many point defects, and carbon in the organic gallium source gas is the first underlayer.
- a large amount of GaN-based compound semiconductor layer 12 may increase yellow light emission. Therefore, in Example 3, the supply amount of the nitrogen source gas in Table 1 was changed from 1 SLM to 2 SLM.
- the lateral growth rate is high and the nitrogen source gas flow rate may be small. May be colored brown, but under the growth conditions of the first underlying GaN-based compound semiconductor layer 12 of Example 3, the first underlying GaN-based compound semiconductor layer 12 is not colored and becomes transparent.
- the nitrogen source gas flow rate to 2 SLM, the lateral growth rate becomes relatively slow, and the opposing side surfaces 12B of the first underlying GaN-based compound semiconductor layers 12 tend not to contact each other. is there.
- a mask layer 13 is formed on the top surface 12A of the first underlying GaN-based compound semiconductor layer 12 located above the seed layer 11.
- the second underlying GaN-based compound semiconductor layer 14 is laterally epitaxially grown on the top surface 12A force of the first underlying GaN-based compound semiconductor layer 12, From the opposite side surface 12B of the first underlayer GaN-based compound semiconductor layer 12 A third underlying GaN-based compound semiconductor layer 15 is laterally epitaxially grown.
- a GaN-based compound semiconductor layer can be formed.
- a GaN-based semiconductor light emitting device can be obtained.
- Example 4 relates to the GaN-based semiconductor light-emitting element according to the second and third aspects of the present invention, and the method for manufacturing the GaN-based semiconductor light-emitting element according to the second aspect of the present invention.
- the schematic cross-sectional view of the GaN-based semiconductor light-emitting device of Example 4, more specifically, the light-emitting diode (LED) is the same as that shown in FIG.
- the GaN-based semiconductor light-emitting device of Example 4 includes a first GaN-based compound semiconductor layer 21, an active layer
- the top surface of the first GaN-based compound semiconductor layer 21 is parallel to the M-plane or the nonpolar plane, and has the first conductivity type (specifically, n-type).
- the active layer 22 is formed on the first GaN-based compound semiconductor layer 21 and its top surface is parallel to the M-plane or nonpolar plane.
- the second GaN-based compound semiconductor layer 23 is formed on the active layer 22, and the top surface thereof is parallel to the M-plane or nonpolar plane, and the second conductivity type (specifically, p Type).
- the Mg atom concentration in the second GaN-based compound semiconductor layer 23 is the same as in Example 1.
- the plane is parallel to the M-plane or nonpolar plane.
- the Mg atom concentration in the contact layer 24 is the same as in Example 1.
- the first electrode 25 is formed on the first GaN-based compound semiconductor layer 21, and the second electrode 26 is formed on the contact layer 24.
- FIGS. 2A to 2D are schematic partial end views of the LiAlO substrate and the like.
- a plurality of seed layers 11 made of a compound semiconductor and spaced apart are formed (see FIG. 2A). Specifically, the LiAlO substrate 10 is carried into a MOCVD apparatus, and the same as [Process 100] in Example 1 is performed.
- LiAlO substrate 10 is
- a plurality of seed layers 11 separated from each other can be formed by carrying out the GaN-based compound semiconductor layer so as to have a strip shape based on the lithography technique and the RIE technique.
- the first base GaN-based compound semiconductor layer 12 in which the top surface 12A is parallel to the M surface and the side surface 12B is parallel to the C surface is Seed layer 11 Force lateral epitaxial growth (see Figure 2B). Even in Example 4, when the opposing side surfaces 12B of the first underlying GaN-based compound semiconductor layers 12 contact each other, lateral epitaxial growth of the first underlying GaN-based compound semiconductor layer 12 is performed. Cancel.
- the film formation conditions may be the same as illustrated in Table 1.
- the mask layer 13 is formed on the top surface 12A of the first underlayer GaN-based compound semiconductor layer 12 located above the seed layer 11 (see FIG. 2C).
- the first underlayer GaN-based compound semiconductor layer 12 having a thickness of, for example, about 1 ⁇ m is further formed under the film formation conditions illustrated in Table 2. do it.
- the top surface 14A is parallel to the M-plane on the top surface 12A and the mask layer 13 of the first base GaN-based compound semiconductor layer 12, and the side surface 14B Force the second underlayer GaN compound semiconductor layer 14 parallel to the force plane into the first underlayer GaN compound.
- a lateral epitaxial growth is performed from the top surface 12A of the physical semiconductor layer 12 (see FIG. 2D). Deposition conditions may be the same as in Table 1.
- a GaN-based compound semiconductor layer can be formed.
- the first MOCVD apparatus is used to deposit the first GaN-based compound semiconductor layer 14 on the second base GaN-based compound semiconductor layer 14 without lowering the sapphire substrate 10 to a low temperature.
- GaN-based compound semiconductor layer 21 specifically, for example, a GaN layer having a thickness of about 1 ⁇ m doped with Si
- active layer 22 made of GaN-based compound semiconductor specifically, for example, having a thickness of 2 to 3nm In GaN layer
- Multi-quantum well structure in which Y (1-Y) Z 7 to 20 nm thick GaN layers are stacked, the second GaN-based compound semiconductor layer 23 (specifically, for example, Mg A doped AlGaN layer with a thickness of 5 to 20 nm, a Mg-doped lOOnm-thick GaN layer), and a contact layer 24 (specifically, for example, a Mg-doped lOnm-thick InGaN layer) Sequentially formed by the well-known MOCVD method.
- the second electrode 26 is formed on the contact layer 24 in the same manner as in [Step 150] of Example 1.
- a support layer is formed on the entire surface, or a support is bonded to the entire surface, and then the seed layer 11 and the first underlayer GaN-based compound semiconductor layer 12 are formed. Peel from the LiAlO substrate 10. Specifically, a LiAlO substrate through a LiAlO substrate 10
- Irradiate laser light for example, KrF excimer laser light with a wavelength of 248 nm
- the seed layer 11, the first underlying GaN-based compound semiconductor layer 12, the mask layer 13, and the second underlying GaN-based compound semiconductor layer 14 are removed by a method combining etching and polishing methods, and the first The Ga N-based compound semiconductor layer 12 is exposed.
- the first electrode 25 is formed on the exposed first GaN-based compound semiconductor layer 21. Further, a transparent electrode (not shown) made of ITO connected to the first electrode 25 is formed.
- the GaN-based semiconductor light-emitting device consisting of a bullet-type LED device can be obtained by cleaving and cutting the laminated structure made of to form an LED chip, mounting with the transparent electrode on top, wiring, and resin molding. Obtainable.
- the emission wavelength of the LED device can be controlled in the range of 450 nm to 530 nm.
- the first GaN-based compound semiconductor layer 21 is an AlGaN layer
- the active layer 22 is a GaN layer or an InGaN layer or an AlInGaN layer
- the second GaN-based compound semiconductor layer 23 is an AlGaN layer. In this way, it is possible to control the emission wavelength of LED devices in the range of 360nm and 400nm.
- Example 5 is a modification of Example 4.
- the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11 and each first Before the opposing side surfaces 12B of the underlying GaN-based compound semiconductor layer 12 contact each other, the lateral epitaxial growth is stopped.
- the second underlying GaN-based compound semiconductor layer 14 is laterally epitaxially grown and the side surfaces of the first underlying GaN-based compound semiconductor layer 12 are opposed to each other. From 12B, the third underlying GaN-based compound semiconductor layer 15 is grown by lateral epitaxy.
- FIGS. 3A to 3D are schematic partial end views of the LiAlO substrate, etc.
- a plurality of spaced apart seed layers 11 are formed (see FIG. 3A).
- the top surface 12A is parallel to the M surface, and the side A first underlying GaN-based compound semiconductor layer 12 whose surface 12B is parallel to the C surface is grown laterally and epitaxially by each seed layer 11 (see FIG. 3B).
- the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, and the opposing side surfaces 12B of the first underlying GaN-based compound semiconductor layers 12 are mutually connected. Stop horizontal epitaxy growth before touching.
- the same process as [Process—410] in Example 4 is performed. However, the film formation time is shorter than that in Example 4.
- a mask layer 13 is formed on the top surface 12A of the first underlying GaN-based compound semiconductor layer 12 located above the seed layer 11 (FIG. 3C). reference).
- the second underlying GaN-based compound semiconductor layer 14 is laterally epitaxially grown on the top surface 12A force of the first underlying GaN-based compound semiconductor layer 12, and the first The first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from the opposite side surface 12B of the GaN-based compound semiconductor layer 12 (see FIG. 3D).
- a GaN-based compound semiconductor layer can be formed.
- Example 4 Thereafter, the same steps as [Step-440] to [Step-470] of Example 4 are performed, whereby a GaN-based semiconductor light-emitting element can be obtained.
- the sixth embodiment is a modification of the fifth embodiment.
- the main difference between Example 6 and Example 5 is that the film formation conditions when the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, particularly the supply of nitrogen source gas The amount is increased.
- a plurality of seed layers 11 made of a physical semiconductor and spaced apart are formed.
- the first underlayer GaN-based compound semiconductor layer 12 in which the top surface 12A is parallel to the M-plane and the side surface 12B is parallel to the C-plane Grow laterally from the seed layer 1 1.
- the first underlying GaN-based compound semiconductor layer 12 is laterally epitaxially grown from each seed layer 11, and the opposite side surfaces 12B of each first underlying GaN-based compound semiconductor layer 12 are provided. Stop lateral epitaxial growth before they come into contact with each other.
- the same step as [Step 410] of Example 4 is performed. However, the film formation time is shorter than that in Example 4.
- the obtained first underlayer GaN-based compound semiconductor layer 12 has many point defects, and carbon in the organic gallium source gas is the first underlayer.
- a large amount of GaN-based compound semiconductor layer 12 may increase yellow light emission. Therefore, in Example 6, the supply amount of the nitrogen source gas in Table 1 was changed from 1 SLM to 2 SLM.
- the growth conditions of the first underlying GaN-based compound semiconductor layer 12 shown in Example 4 may be such that the lateral growth rate is high and the nitrogen source gas flow rate is small. May be colored brown, but under the growth conditions of the first underlying GaN-based compound semiconductor layer 12 of Example 6, the first underlying GaN-based compound semiconductor layer 12 is not colored and becomes transparent.
- the nitrogen source gas flow rate to 2 SLM, the lateral growth rate becomes relatively slow, and the opposing side surfaces 12B of the first underlying GaN-based compound semiconductor layers 12 tend not to contact each other. is there.
- a mask layer 13 is formed on the top surface 12A of the first underlying GaN-based compound semiconductor layer 12 located above the seed layer 11.
- the second underlying GaN-based compound semiconductor is used.
- the layer 14 is grown in the lateral epitaxy by the top surface 12A force of the first base GaN-based compound semiconductor layer 12 and the third base GaN-based compound semiconductor from the opposite side surface 12B of the first base GaN-based compound semiconductor layer 12.
- Grow layer 15 laterally epitaxially.
- a GaN-based compound semiconductor layer can be formed.
- Example 4 Thereafter, the same steps as [Step 440] to [Step 470] of Example 4 are performed, whereby a GaN-based semiconductor light-emitting element can be obtained.
- the present invention has been described based on the preferred embodiments, the present invention is not limited to these embodiments.
- the types of substrates, GaN-based compound semiconductor layers, compositions, film thicknesses, configurations, structures, and the like described in the examples are examples and can be changed as appropriate.
- the conditions, various numerical values, materials used, and the like described in the examples are examples, and can be changed as appropriate.
- a method for forming a seed layer 11 made of a GaN-based compound semiconductor is described as follows.
- the seed layer 111 made of a GaN-based compound semiconductor has a GaN-based compound semiconductor layer 111A (for example, the top surface is an A-plane) on the substrate 10.
- a non-growth layer a layer on which a GaN-based compound semiconductor layer does not grow
- a GaN layer parallel to the M plane is formed thereon, and then lithography and etching techniques are used. This non-growth layer 11B can be obtained by patterning and exposing the GaN-based compound semiconductor layer 111A.
- a GaN-based semiconductor light-emitting device having the configuration and structure described in Example 1 or Example 4 is formed on a substrate based on a conventional method, that is, MOCVD.
- the first GaN-based compound semiconductor layer, the active layer, the second GaN-based compound semiconductor layer, and the contact layer can be sequentially formed thereon.
- the method for manufacturing a GaN-based semiconductor light-emitting device according to the first or second aspect of the present invention can also be expressed as follows. That is,
- a first underlying GaN-based compound semiconductor layer whose top surface is parallel to the nonpolar surface is laterally epitaxially grown from each seed layer, and then
- the second base GaN-based compound semiconductor layer whose top surface is parallel to the nonpolar surface is disposed on the first base GaN-based compound semiconductor layer. Grow laterally from the top surface of the conductor layer, and then
- a first GaN compound semiconductor layer having a top surface parallel to the nonpolar surface and having the first conductivity type
- an active layer having a top surface parallel to the nonpolar surface
- Each step is provided at least.
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Abstract
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EP05820163A EP1837922A4 (en) | 2005-01-11 | 2005-12-26 | GAN-BASED SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
US11/813,736 US20080048195A1 (en) | 2005-01-11 | 2005-12-26 | Gan-Based Light-Emitting Element and Method for Producing Same |
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JP2005003436A JP4140606B2 (ja) | 2005-01-11 | 2005-01-11 | GaN系半導体発光素子の製造方法 |
JP2005-003436 | 2005-01-11 |
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US (1) | US20080048195A1 (ja) |
EP (1) | EP1837922A4 (ja) |
JP (1) | JP4140606B2 (ja) |
KR (1) | KR101211076B1 (ja) |
CN (1) | CN100557831C (ja) |
TW (1) | TW200711165A (ja) |
WO (1) | WO2006075511A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5113330B2 (ja) | 2005-11-30 | 2013-01-09 | ローム株式会社 | 窒化ガリウム半導体発光素子 |
US8013320B2 (en) * | 2006-03-03 | 2011-09-06 | Panasonic Corporation | Nitride semiconductor device and method for fabricating the same |
JP2008153285A (ja) * | 2006-12-14 | 2008-07-03 | Rohm Co Ltd | 窒化物半導体装置および窒化物半導体製造方法 |
JP2008159606A (ja) * | 2006-12-20 | 2008-07-10 | Rohm Co Ltd | 窒化物半導体発光素子およびその製造方法 |
JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
US9048169B2 (en) | 2008-05-23 | 2015-06-02 | Soitec | Formation of substantially pit free indium gallium nitride |
KR100957724B1 (ko) * | 2008-06-05 | 2010-05-12 | 우리엘에스티 주식회사 | 화합물 반도체 발광소자 및 발광소자를 위한 발광소자의화합물 반도체 조성비 결정방법 |
JP2010206063A (ja) | 2009-03-05 | 2010-09-16 | Sony Corp | GaN系半導体発光素子の駆動方法、画像表示装置におけるGaN系半導体発光素子の駆動方法、面状光源装置の駆動方法、及び、発光装置の駆動方法 |
WO2011010436A1 (ja) * | 2009-07-22 | 2011-01-27 | パナソニック株式会社 | 発光ダイオード |
EP2565942B1 (en) | 2010-04-28 | 2018-10-24 | Panasonic Intellectual Property Management Co., Ltd. | Nitride-type semiconductor element |
JPWO2011135866A1 (ja) | 2010-04-28 | 2013-07-18 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
JP2012064728A (ja) | 2010-09-15 | 2012-03-29 | Stanley Electric Co Ltd | 光源装置 |
CN102064261B (zh) * | 2010-11-03 | 2012-09-05 | 中国科学院半导体研究所 | 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法 |
CN103283043A (zh) | 2011-04-08 | 2013-09-04 | 松下电器产业株式会社 | 氮化物系半导体元件及其制造方法 |
JP5813448B2 (ja) * | 2011-10-07 | 2015-11-17 | シャープ株式会社 | 窒化物半導体素子の製造方法 |
JP6392498B2 (ja) * | 2013-03-29 | 2018-09-19 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US10141721B2 (en) * | 2014-06-17 | 2018-11-27 | Sony Corporation | Light-emitting element and manufacturing method thereof |
MY190127A (en) * | 2016-10-31 | 2022-03-30 | Univ Malaya | Method for producing a non-polar a-plane gallium nitride (gan) thin film on an r-plane sapphire substrate |
JP2023523546A (ja) * | 2020-04-17 | 2023-06-06 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | エピタキシャル側方過成長技法を使用してデバイスを除去するための方法 |
CN111862886A (zh) * | 2020-08-03 | 2020-10-30 | 京东方科技集团股份有限公司 | 驱动基板及其制作方法和显示装置 |
WO2024101774A1 (ko) * | 2022-11-09 | 2024-05-16 | 웨이브로드 주식회사 | 그룹3족 질화물 반도체 템플릿의 제조 방법 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274518A (ja) * | 2000-03-23 | 2001-10-05 | Fuji Photo Film Co Ltd | 半導体素子用基板およびその製造方法およびそれを用いた半導体素子 |
JP2002033282A (ja) | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法 |
JP2002100579A (ja) | 2000-07-17 | 2002-04-05 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法 |
JP2003037286A (ja) * | 2001-05-18 | 2003-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2003046127A (ja) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
JP2003158294A (ja) | 2001-11-13 | 2003-05-30 | Lumileds Lighting Us Llc | 発光デバイスからの光取り出し改良のための核形成層 |
JP2004111514A (ja) * | 2002-09-17 | 2004-04-08 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子およびその製造方法 |
JP2004262757A (ja) * | 2001-04-24 | 2004-09-24 | Sony Corp | 窒化物半導体、半導体素子およびこれらの製造方法 |
JP2004335559A (ja) * | 2003-04-30 | 2004-11-25 | Nichia Chem Ind Ltd | Iii族窒化物基板を用いる半導体素子 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348096B1 (en) * | 1997-03-13 | 2002-02-19 | Nec Corporation | Method for manufacturing group III-V compound semiconductors |
EP2234142A1 (en) * | 1997-04-11 | 2010-09-29 | Nichia Corporation | Nitride semiconductor substrate |
US6566231B2 (en) * | 2000-02-24 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region |
KR100708081B1 (ko) * | 2000-05-18 | 2007-04-16 | 삼성전자주식회사 | 선택적 산화법에 의한 표면광 레이저의 어퍼쳐 제조 장치및 방법 |
JP3556916B2 (ja) * | 2000-09-18 | 2004-08-25 | 三菱電線工業株式会社 | 半導体基材の製造方法 |
US6939730B2 (en) * | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
US6649942B2 (en) * | 2001-05-23 | 2003-11-18 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
JP4693351B2 (ja) * | 2001-10-26 | 2011-06-01 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | エピタキシャル成長用基板 |
US7186302B2 (en) * | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
US7372077B2 (en) * | 2003-02-07 | 2008-05-13 | Sanyo Electric Co., Ltd. | Semiconductor device |
JP2004288799A (ja) * | 2003-03-20 | 2004-10-14 | Sony Corp | 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法 |
-
2005
- 2005-01-11 JP JP2005003436A patent/JP4140606B2/ja not_active Expired - Fee Related
- 2005-12-26 EP EP05820163A patent/EP1837922A4/en not_active Withdrawn
- 2005-12-26 WO PCT/JP2005/023760 patent/WO2006075511A1/ja active Application Filing
- 2005-12-26 CN CNB2005800490546A patent/CN100557831C/zh not_active Expired - Fee Related
- 2005-12-26 KR KR1020077015674A patent/KR101211076B1/ko not_active IP Right Cessation
- 2005-12-26 US US11/813,736 patent/US20080048195A1/en not_active Abandoned
- 2005-12-28 TW TW094147072A patent/TW200711165A/zh not_active IP Right Cessation
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274518A (ja) * | 2000-03-23 | 2001-10-05 | Fuji Photo Film Co Ltd | 半導体素子用基板およびその製造方法およびそれを用いた半導体素子 |
JP2002033282A (ja) | 2000-07-13 | 2002-01-31 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法 |
JP2002100579A (ja) | 2000-07-17 | 2002-04-05 | Nichia Chem Ind Ltd | 窒化物半導体基板及びその製造方法 |
JP2004262757A (ja) * | 2001-04-24 | 2004-09-24 | Sony Corp | 窒化物半導体、半導体素子およびこれらの製造方法 |
JP2003037286A (ja) * | 2001-05-18 | 2003-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2003046127A (ja) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子 |
JP2003158294A (ja) | 2001-11-13 | 2003-05-30 | Lumileds Lighting Us Llc | 発光デバイスからの光取り出し改良のための核形成層 |
JP2004111514A (ja) * | 2002-09-17 | 2004-04-08 | Sanyo Electric Co Ltd | 窒化物系半導体発光素子およびその製造方法 |
JP2004335559A (ja) * | 2003-04-30 | 2004-11-25 | Nichia Chem Ind Ltd | Iii族窒化物基板を用いる半導体素子 |
Non-Patent Citations (2)
Title |
---|
See also references of EP1837922A4 * |
WALTEREIT P. ET AL.: "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", NATURE, vol. 406, 24 August 2000 (2000-08-24), pages 865 - 868, XP002996349 * |
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KR20070089735A (ko) | 2007-08-31 |
JP4140606B2 (ja) | 2008-08-27 |
CN101142693A (zh) | 2008-03-12 |
KR101211076B1 (ko) | 2012-12-12 |
TW200711165A (en) | 2007-03-16 |
CN100557831C (zh) | 2009-11-04 |
EP1837922A1 (en) | 2007-09-26 |
US20080048195A1 (en) | 2008-02-28 |
EP1837922A4 (en) | 2013-03-20 |
TWI312585B (ja) | 2009-07-21 |
JP2006196490A (ja) | 2006-07-27 |
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