JP2015192009A - Mn及びNbドープのPZT系圧電体膜 - Google Patents
Mn及びNbドープのPZT系圧電体膜 Download PDFInfo
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- JP2015192009A JP2015192009A JP2014067840A JP2014067840A JP2015192009A JP 2015192009 A JP2015192009 A JP 2015192009A JP 2014067840 A JP2014067840 A JP 2014067840A JP 2014067840 A JP2014067840 A JP 2014067840A JP 2015192009 A JP2015192009 A JP 2015192009A
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- 239000000463 material Substances 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 48
- 230000010287 polarization Effects 0.000 claims abstract description 37
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 34
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 28
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 28
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 15
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims description 116
- 239000002243 precursor Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 33
- 239000010408 film Substances 0.000 description 228
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 78
- 239000011572 manganese Substances 0.000 description 75
- 239000010955 niobium Substances 0.000 description 58
- 239000010936 titanium Substances 0.000 description 58
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- 239000011133 lead Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 32
- 150000002009 diols Chemical class 0.000 description 29
- 239000000758 substrate Substances 0.000 description 24
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 22
- 238000001354 calcination Methods 0.000 description 21
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 20
- 239000002904 solvent Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 18
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- 238000006243 chemical reaction Methods 0.000 description 17
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 17
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 17
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 16
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- 125000004429 atom Chemical group 0.000 description 14
- 108010025899 gelatin film Proteins 0.000 description 14
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- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 10
- 229940046892 lead acetate Drugs 0.000 description 10
- 239000003381 stabilizer Substances 0.000 description 10
- FHRAKXJVEOBCBQ-UHFFFAOYSA-L 2-ethylhexanoate;manganese(2+) Chemical compound [Mn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O FHRAKXJVEOBCBQ-UHFFFAOYSA-L 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 9
- KQNKJJBFUFKYFX-UHFFFAOYSA-N acetic acid;trihydrate Chemical compound O.O.O.CC(O)=O KQNKJJBFUFKYFX-UHFFFAOYSA-N 0.000 description 9
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 9
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 9
- 239000012299 nitrogen atmosphere Substances 0.000 description 9
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- 229910010413 TiO 2 Inorganic materials 0.000 description 4
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- 238000002425 crystallisation Methods 0.000 description 4
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
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- 239000002253 acid Substances 0.000 description 3
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- 230000028161 membrane depolarization Effects 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- GQKZRWSUJHVIPE-UHFFFAOYSA-N 2-Pentanol acetate Chemical compound CCCC(C)OC(C)=O GQKZRWSUJHVIPE-UHFFFAOYSA-N 0.000 description 2
- WFRBDWRZVBPBDO-UHFFFAOYSA-N 2-methyl-2-pentanol Chemical compound CCCC(C)(C)O WFRBDWRZVBPBDO-UHFFFAOYSA-N 0.000 description 2
- ATUUSOSLBXVJKL-UHFFFAOYSA-N 3-ethylpentanoic acid Chemical compound CCC(CC)CC(O)=O ATUUSOSLBXVJKL-UHFFFAOYSA-N 0.000 description 2
- ROWKJAVDOGWPAT-UHFFFAOYSA-N Acetoin Chemical compound CC(O)C(C)=O ROWKJAVDOGWPAT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
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- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 description 2
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- IGIDLTISMCAULB-YFKPBYRVSA-N (3s)-3-methylpentanoic acid Chemical compound CC[C@H](C)CC(O)=O IGIDLTISMCAULB-YFKPBYRVSA-N 0.000 description 1
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 description 1
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- CVBUKMMMRLOKQR-UHFFFAOYSA-N 1-phenylbutane-1,3-dione Chemical compound CC(=O)CC(=O)C1=CC=CC=C1 CVBUKMMMRLOKQR-UHFFFAOYSA-N 0.000 description 1
- YRAJNWYBUCUFBD-UHFFFAOYSA-N 2,2,6,6-tetramethylheptane-3,5-dione Chemical compound CC(C)(C)C(=O)CC(=O)C(C)(C)C YRAJNWYBUCUFBD-UHFFFAOYSA-N 0.000 description 1
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- SNOJPWLNAMAYSX-UHFFFAOYSA-N 2-methylpropan-1-ol;titanium Chemical compound [Ti].CC(C)CO.CC(C)CO.CC(C)CO.CC(C)CO SNOJPWLNAMAYSX-UHFFFAOYSA-N 0.000 description 1
- GRWPYGBKJYICOO-UHFFFAOYSA-N 2-methylpropan-2-olate;titanium(4+) Chemical compound [Ti+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] GRWPYGBKJYICOO-UHFFFAOYSA-N 0.000 description 1
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- SGGOJYZMTYGPCH-UHFFFAOYSA-L manganese(2+);naphthalene-2-carboxylate Chemical compound [Mn+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 SGGOJYZMTYGPCH-UHFFFAOYSA-L 0.000 description 1
- SQZZGEUJERGRIN-UHFFFAOYSA-N manganese;pentane-2,4-dione Chemical compound [Mn].CC(=O)CC(C)=O SQZZGEUJERGRIN-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011085 pressure filtration Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WMOVHXAZOJBABW-UHFFFAOYSA-N tert-butyl acetate Chemical compound CC(=O)OC(C)(C)C WMOVHXAZOJBABW-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000009283 thermal hydrolysis Methods 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Abstract
Description
式(1)中、d31は圧電定数、ε33は誘電率を示す。
+(300clogηrel +(c+1.5clogηrel)2)1/2/(0.15c+0.003c2)
上記式中、「ηrel」は、ポリビニルピロリドン水溶液の水に対する相対粘度を示し、「c」は、ポリビニルピロリドン水溶液中のポリビニルピロリドン濃度(%)を示す。
ポリビニルピロリドンのk値は、30〜90であることが好ましい。厚みのある圧電体膜を形成するには、組成物を基板等へ塗布する際、塗布された塗膜(ゲル膜)がその厚さを維持するために十分な粘度が必要となるが、k値が下限値未満では、それが得られにくい。一方、上限値を超えると粘度が高くなりすぎて、組成物を均一に塗布することが困難になる。
先ず、反応容器に酢酸鉛三水和物(Pb源)とプロピレングリコール(ジオール)とを入れ、窒素雰囲気中、150℃の温度で1時間還流した後、この反応容器に2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)、チタンテトライソプロポキシド(Ti源)及びアセチルアセトン(安定化剤)を更に加え、窒素雰囲気中、150℃の温度で1時間還流して反応させることにより、合成液を調製した。ここで、上記酢酸鉛三水和物(Pb源)、2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体は、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が以下の表1に示す値になるように秤量した。またプロピレングリコール(ジオール)は、調製後の組成物100質量%に対して30質量%となるように添加し、アセチルアセトン(安定化剤)はPZT系前駆体1モルに対して2モルとなるように添加した。次いで上記合成液100質量%中に占めるPZT系前駆体の濃度が、酸化物濃度で35質量%になるように減圧蒸留を行って不要な溶媒を除去した。ここで、合成液中に占めるPZT系前駆体の濃度における酸化物濃度とは、合成液に含まれる全ての金属原子が目的の酸化物になったと仮定して算出した、合成液100質量%に占める金属酸化物の濃度(酸化物換算値)をいう。
酢酸鉛三水和物(Pb源)、2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体を、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が、以下の表1に示す値になるようにそれぞれ秤量したこと以外は、実施例1と同様にして組成物を調製し、圧電体膜を形成した。実施例2〜8で形成した圧電体膜は、以下の表3に示す組成の膜であった。
Mn源、Nb源としてのPZT系前駆体を使用せず、酢酸鉛三水和物(Pb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体を、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が以下の表1に示す値になるように秤量したこと以外は、実施例1と同様にして組成物を調製し、圧電体膜を形成した。なお、形成後の圧電体膜は、以下の表3に示す組成の膜であった。
酢酸鉛三水和物(Pb源)、2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体を、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が、以下の表1に示す値になるようにそれぞれ秤量したこと以外は、実施例1と同様にして組成物を調製し、圧電体膜を形成した。比較例2〜9で形成した圧電体膜は、以下の表3に示す組成の膜であった。
先ず、反応容器に酢酸鉛三水和物(Pb源)とプロピレングリコール(ジオール)とを入れ、窒素雰囲気中、150℃の温度で1時間還流した後、この反応容器に2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)、チタンテトライソプロポキシド(Ti源)及びアセチルアセトン(安定化剤)を更に加え、窒素雰囲気中、150℃の温度で1時間還流して反応させることにより、合成液を調製した。ここで、上記酢酸鉛三水和物(Pb源)、2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体は、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が以下の表2に示す値になるように秤量した。またプロピレングリコール(ジオール)は、調製後の組成物100質量%に対して16質量%となるように添加し、アセチルアセトン(安定化剤)は調製後の組成物に含まれるMn、Nb、Zr及びTiの総量1モルに対して2モルとなる割合で添加した。次いで上記合成液100質量%中に占めるPZT系前駆体の濃度が、酸化物濃度で35質量%になるように減圧蒸留を行って不要な溶媒を除去した。ここで、合成液中に占めるPZT系前駆体の濃度における酸化物濃度とは、合成液に含まれる全ての金属原子が目的の酸化物になったと仮定して算出した、合成液100質量%に占める金属酸化物の濃度(酸化物換算値)をいう。
調製後の組成物100質量%に占めるプロピレングリコール(ジオール)の割合が、以下の表2に示す割合になるよう調整したこと以外は、実施例9と同様にして組成物を調製し、圧電体膜を形成した。なお、実施例10,11で形成した圧電体膜は、以下の表4に示す組成の膜であった。
組成物100質量%に占めるプロピレングリコール(ジオール)の割合が、以下の表2に示す割合になるよう調整したこと、及びMn、Nb、Zr及びTiの総量1モルに対するアセチルアセトンの割合を、以下の表2に示す割合に調整したこと以外は、実施例9と同様にして組成物を調製し、圧電体膜を形成した。なお、実施例12〜14で形成した圧電体膜は、で形成した圧電体膜は、以下の表4に示す組成の膜であった。
組成物100質量%に占めるプロピレングリコール(ジオール)の割合が、以下の表2に示す割合になるよう調整したこと、及び組成物100質量%中に占めるPZT系前駆体の濃度が、酸化物濃度で、以下の表2に示す値になるように調整したこと以外は、実施例9と同様にして組成物を調製し、圧電体膜を形成した。なお、形成後の圧電体膜は、以下の表4に示す組成の膜であった。
先ず、反応容器に酢酸鉛三水和物(Pb源)とプロピレングリコール(ジオール)とを入れ、窒素雰囲気中、150℃の温度で1時間還流した後、この反応容器に2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)、チタンテトライソプロポキシド(Ti源)及びアセチルアセトン(安定化剤)を更に加え、窒素雰囲気中、150℃の温度で1時間還流して反応させることにより、合成液を調製した。ここで、上記酢酸鉛三水和物(Pb源)、2−エチルヘキサン酸マンガン(Mn源)、ニオブペンタエトキシド(Nb源)、ジルコニウムテトラブトキシド(Zr源)及びチタンテトライソプロポキシド(Ti源)の各PZT系前駆体は、液中の金属原子比(Pb:Mn:Nb:Zr:Ti)が以下の表2に示す値になるように秤量した。またプロピレングリコール(ジオール)は、調製後の組成物100質量%に対して30質量%となるように添加し、アセチルアセトン(安定化剤)は、調製後の組成物に含まれるMn、Nb、Zr及びTiの総量1モルに対して2モルとなるように添加した。次いで上記合成液100質量%中に占めるPZT系前駆体の濃度が、酸化物濃度で35質量%になるように減圧蒸留を行って不要な溶媒を除去した。ここで、合成液中に占めるPZT系前駆体の濃度における酸化物濃度とは、合成液に含まれる全ての金属原子が目的の酸化物になったと仮定して算出した、合成液100質量%に占める金属酸化物の濃度(酸化物換算値)をいう。
組成物100質量%中に占めるPZT系前駆体の濃度が、酸化物濃度で、以下の表2に示す値になるように調整したこと以外は、実施例16と同様にして組成物を調製し、圧電体膜を形成した。なお、形成後の圧電体膜は、以下の表4に示す組成の膜であった。
実施例1〜17及び比較例1〜9で形成した圧電体膜について、膜組成、ヒステリシスのずれ、比誘電率、圧電定数e31.f、クラックの有無、結晶の(100)面における配向度をそれぞれ評価した。これらの結果を以下の表3,表4に示す。
Claims (4)
- Mn及びNbドープの複合金属酸化物からなり、
前記組成物中の金属原子比(Pb:Mn:Nb:Zr:Ti)が(0.98〜1.12):(0.002〜0.056):(0.002〜0.056):(0.40〜0.60):(0.40〜0.60)を満たし、かつ前記Mn及びNbの金属原子比の合計を1としたときの前記Mnの割合が0.20〜0.80、前記Zr及びTiの金属原子比の合計を1としたときの前記Zrの割合が0.40〜0.60、前記Mn、Nb、Zr及びTiの金属原子比の合計を1としたときの前記Zr及びTiの合計割合が0.9300〜0.9902であるMn及びNbドープのPZT系圧電体膜。 - X線回折による(100)配向度が90%以上であり、分極量のヒステリシスがその中心から正側に5kV/cm以上シフトした請求項1記載のMn及びNbドープのPZT系圧電体膜。
- PZT系前駆体を含有する組成物を用いて湿式塗工法により形成された請求項1又は2記載のMn及びNbドープのPZT系圧電体膜。
- 膜厚が500〜5000nmの範囲である請求項1ないし3いずれか1項に記載のMn及びNbドープのPZT系圧電体膜。
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JP2020524655A (ja) * | 2017-07-26 | 2020-08-20 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | 硬質pztセラミックス、圧電多層デバイス及び圧電多層デバイスの製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009290369A (ja) * | 2008-05-27 | 2009-12-10 | Panasonic Electric Works Co Ltd | Baw共振装置 |
JP2011029274A (ja) * | 2009-07-22 | 2011-02-10 | Panasonic Electric Works Co Ltd | 発電デバイスおよびその製造方法 |
Family Cites Families (2)
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JP5919956B2 (ja) * | 2012-03-30 | 2016-05-18 | 三菱マテリアル株式会社 | Pzt系強誘電体薄膜の製造方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2009290369A (ja) * | 2008-05-27 | 2009-12-10 | Panasonic Electric Works Co Ltd | Baw共振装置 |
JP2011029274A (ja) * | 2009-07-22 | 2011-02-10 | Panasonic Electric Works Co Ltd | 発電デバイスおよびその製造方法 |
Non-Patent Citations (1)
Title |
---|
K.WASA(他5名): "Microstructure and Piezoelectric Properties of PZT-based Ternary Perovskite Pb(Mn,Nb)O3-PZT Thin Fil", APPLICATIONS OF FERROELECTRICS, 2009. ISAF 2009. 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE, JPN6015017471, 27 August 2009 (2009-08-27), US, pages 1 - 5, XP055225257, ISSN: 0003586793, DOI: 10.1109/ISAF.2009.5307583 * |
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JP2017174835A (ja) * | 2016-03-18 | 2017-09-28 | 国立研究開発法人産業技術総合研究所 | ニオブ酸チタン酸ジルコン酸鉛膜積層体、ニオブ酸チタン酸ジルコン酸鉛膜積層体を用いた素子及びその製造方法 |
WO2018150844A1 (ja) * | 2017-02-16 | 2018-08-23 | パナソニックIpマネジメント株式会社 | 圧電素子、アクチュエータおよび液滴吐出ヘッド |
JP6402369B1 (ja) * | 2017-02-16 | 2018-10-10 | パナソニックIpマネジメント株式会社 | 圧電素子、アクチュエータおよび液滴吐出ヘッド |
JP2020524655A (ja) * | 2017-07-26 | 2020-08-20 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフトTdk Electronics Ag | 硬質pztセラミックス、圧電多層デバイス及び圧電多層デバイスの製造方法 |
JP7033615B2 (ja) | 2017-07-26 | 2022-03-10 | ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフト | 硬質pztセラミックス、圧電多層デバイス及び圧電多層デバイスの製造方法 |
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