JP2015076511A - 半導体装置およびその製造方法 - Google Patents
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Abstract
Description
[1.第1実施形態]
<構成>
図1は、第1実施形態に係る半導体装置であり、(a)は上面図、(b)は断面図である。図1(a)は、第1実施形態に係る半導体装置100の上面図であり、図1(b)は図1(a)のAA断面における断面図である。図1(a)では図1(b)に示す封止剤8を省略している。半導体装置100は、IGBTチップ1、ダイオードチップ2、チップ下はんだ3、基板4(電子部品)、基板下はんだ5、ベース6、ケース7、封止剤8、配線用ワイヤ10、位置決め用ワイヤ9を備える。
図2は、半導体装置の製造方法を示すフローチャートである。図3は、半導体装置の製造方法を示す説明図であり、(a)〜(e)は、基板4(電子部品)の製造工程であり、(f)〜(h)は、基板4をベース6に実装する実装工程である。適宜、図1を参照して半導体装置100の製造方法を説明する。
図4は、半導体装置における位置決め用ワイヤの配置例を示す上面図であり、(a)は位置決め用ワイヤ4本の場合、(b)は位置決め用ワイヤ3本の場合、(c)は位置決め用ワイヤ2本の場合、(d)は位置決め用ワイヤ3本の変形例の場合である。図4(a)から図4(d)は、半導体装置100の上面図である。ただし、ケース7と封止剤8は省略している。図4を用いて、位置決め用ワイヤ9による基板4と基板下はんだ5の位置決めについて説明する。
第2実施形態は、位置決め用ワイヤ9に山型部92(図6(b))を設けたことを特徴の一つとする。
<構成>
図6は、第2実施形態に係る半導体装置であり、(a)は側面図、(b)は位置決め用ワイヤの斜視図である。図6を参照しながら、第2実施形態に係る半導体装置200について説明する。なお、図1に示した半導体装置100と同様の部材については同様の符号を付するものとし、その詳細な説明は省略する。
通常、カーボン等の治具で位置決めする場合には、リフロー時の基板4の傾き等によって基板下はんだ5が薄くなることがある。これに対し、半導体装置200では、絶縁層42の面42aと山型部92が接すると、それ以上は基板4が下方向へは動かないため、位置決め用ワイヤ9a近傍では基板下はんだ5の厚さが目標値以上に保たれる。
第3実施形態は、位置決め用ワイヤ9b(図7(a))が基板下はんだ5の角部に配置したことを特徴の一つとする。
<構成>
図7は、第3実施形態に係る半導体装置であり、(a)は斜視図、(b)は上面図、(c)は位置決め用ワイヤの斜視図である。図7を参照して、第3実施形態に係る半導体装置300について説明する。なお、図1に示した半導体装置100と同様の部材については同様の符号を付するものとし、その詳細な説明は省略する。
第3実施形態は、第2実施形態と同様に、山型部92により、位置決め用ワイヤ9b(あるいは9a)近傍ではリフロー後の基板下はんだ5の厚さを目標値以上に保つことができ、温度変化による基板下はんだ5へのせん断負荷を低減できる。
前記した3つの実施形態の他にも、本発明趣旨を損なわなければ、前記実施形態を適宜変更して実施可能である。例えば、基板4の個数は、前記の実施形態に何ら限定されない。ベース6の上面に任意の個数の基板4が配置される場合も、同様に適用可能である。ベース6の形状は平板に限定されない。効率良く放熱できる限り、下面側にフィン等の凹凸を有する形状等、任意の形状にすることができる。
2 ダイオードチップ(半導体チップ)
3 チップ下はんだ
4 基板(電子部品)
41 回路層
42 絶縁層
42a 面
43 放熱層
5 基板下はんだ(はんだ)
6 ベース
7 ケース
8 封止剤
9,9a,9b 位置決め用ワイヤ
91 接続部
92 山型部
93 山型部高さ
10 配線用ワイヤ
11 カーボン治具
12 穴
100,200,300,300a 半導体装置
Claims (7)
- ベース上にはんだを介して半導体チップを含む電子部品を配置し、前記はんだをリフロー加熱してはんだ付けする半導体装置であって、
前記ベース上に、前記はんだおよび前記電子部品の配置の位置決めをするための位置決め用ワイヤを備え、
前記位置決め用ワイヤに合わせて、前記はんだおよび前記電子部品を配置し、前記リフロー加熱後に前記電子部品を封止剤で封止する
ことを特徴とする半導体装置。 - 前記電子部品は、絶縁層と、前記絶縁層よりも小さい平面寸法を有していて前記絶縁層の一方の表面に形成された回路層と、前記絶縁層よりも小さい平面寸法の矩形平面形状を有していて前記絶縁層の他方の表面に形成された放熱層とを含んで構成される基板であり、
前記位置決め用ワイヤは、前記絶縁層の前記他方の表面のうち前記放熱層と接する部分以外の部分と前記ベースの前記基板が固定される表面のうち前記はんだと接する部分以外の部分とで挟まれる領域であって、前記放熱層の前記矩形平面形状の少なくとも互いに直交する2辺のそれぞれに沿った2つの領域に少なくとも1つずつ配置される
ことを特徴とする請求項1に記載の半導体装置。 - 前記半導体装置は、前記回路層および前記半導体チップの少なくとも一方の表面に配置され、前記回路層上の電気的配線の一部をなす配線用ワイヤを備え、
前記位置決め用ワイヤと前記配線用ワイヤが同等の金属材質からなり、かつ、同等の断面形状である
ことを特徴とする請求項2に記載の半導体装置。 - 前記位置決め用ワイヤの直径が前記はんだの厚さよりも大きい
ことを特徴とする請求項3に記載の半導体装置。 - 前記位置決め用ワイヤが、前記ベースと接続する少なくとも2つの接続部を有し、前記少なくとも2つの接続部の間が山型に曲がった山型部を有しており、
前記位置決め用ワイヤの山型部が前記ベースに略垂直に配置される
ことを特徴とする請求項1から請求項4のいずれか1項に記載の半導体装置。 - ベース上にはんだを介して半導体チップを含む電子部品を配置し、前記はんだをリフロー加熱してはんだ付けする半導体装置の製造方法であって、
前記ベース上に、前記はんだおよび前記電子部品の配置の位置決めをするための位置決めワイヤを配置する工程と、
前記位置決めワイヤに合わせて、前記はんだおよび前記電子部品を配置する工程と、
前記リフロー加熱後に前記電子部品を封止剤で封止する工程と、を含む
ことを特徴とする半導体装置の製造方法。 - 前記電子部品は、絶縁層と、前記絶縁層よりも小さい平面寸法を有していて前記絶縁層の一方の表面に形成された回路層と、前記絶縁層よりも小さい平面寸法の矩形平面形状を有していて前記絶縁層の他方の表面に形成された放熱層とを含んで構成される基板であり、
前記位置決めワイヤを配置する工程は、前記絶縁層の前記他方の表面のうち前記放熱層と接する部分以外の部分と前記ベースの前記基板が固定される表面のうち前記はんだと接する部分以外の部分とで挟まれる領域であって、前記放熱層の前記矩形平面形状の少なくとも互いに直交する2辺のそれぞれに沿った2つの領域に少なくとも1つずつ配置される工程である
ことを特徴とする請求項6に記載の半導体装置の製造方法。
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