JP2014200087A - ラジオ周波数パッシブ及びアンテナのための方法、装置及び材料 - Google Patents
ラジオ周波数パッシブ及びアンテナのための方法、装置及び材料 Download PDFInfo
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- JP2014200087A JP2014200087A JP2014063211A JP2014063211A JP2014200087A JP 2014200087 A JP2014200087 A JP 2014200087A JP 2014063211 A JP2014063211 A JP 2014063211A JP 2014063211 A JP2014063211 A JP 2014063211A JP 2014200087 A JP2014200087 A JP 2014200087A
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Images
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Abstract
Description
本発明は、ラジオ周波数パッシブデバイス及びパッケージの分野、特にナノ磁性コンポジット上の小型アンテナを使用するパッシブデバイス及びパッケージングに関する。
ウルトラブックコンピュータ、タブレット及びスマートフォンのようなスモールフォームファクタデバイスは、Wi−Fi,Bluetooth(登録商標),移動体通信ネットワーク(例えばLTE(ロング・ターム・エボリューション)もしくは3G(第3世代移動体通信),FM(周波数変調)ラジオ,GPS(グローバル・ポジショニング・システム),RFID(無線周波数識別),NFC(近接場型の無線通信)及びDTV(デジタルテレビ放送)サービス、等)をカバーするため、5乃至7個のアンテナもしくはそれ以上を収容する。アンテナの数、そのサイズ及びそのRF隔離条件は、デバイスのフォームファクタ及びデザインに厳しい制限を加える。従来、アンテナ及びインダクタ(これらは典型的にはマザーボード上に置かれた)の両方に個別部品が使用されてきた。もしアンテナサイズを顕著に減らせるならば、通信デバイスの全体のサイズを減らすことができ、もしくは前記デバイスの多くを他の目的に使用できるかもしれない。
本発明の実施形態は、例示を意図して、及び限定を意図してではなく添付の図面において説明される。図面中同じ参照番号は類似の要素を意味する。
有機パッケージ基板上に堆積したナノ磁性材料を使用して、非常に小型のアンテナが製造されるかもしれない。該アンテナは、それ自体が有機パッケージ基板に積層もしくは成形されているナノ磁性コンポジット材料上で製造可能である。例えばウルトラブックコンピュータ、タブレット及びスマートフォンにおいて有用な非常に小さいRFパッケージもしくはモジュールを生成するため、該アンテナはその次に他のRF部品と一体化されるかもしれない。
前記磁性ナノ粒子の磁界を整列させるステップ;
前記磁性ナノ粒子の整列を維持するため、前記樹脂を硬化するステップ;
前記ナノコンポジット材料に導電性通路を適用するステップ;及び
電子デバイスを完成させるため、前記導電性通路へのコネクタを形成するステップ;
を有する方法に関する。前記導電性通路は、シングルターンインダクタコイルでよい。前記エポキシ樹脂を加熱すること、磁界を印加すること、及び前記樹脂を印加された磁界により硬化させることにより、磁界を整列させてよい。前記磁性ナノ粒子は不動態化され、シリカ被覆されてよい。前記磁性ナノ粒子は、シラン化合物で表面処理されてよい。前記樹脂は、有機熱硬化樹脂でよい。
前記アンテナを形成するステップは、前記ナノコンポジット材料の上で前記アンテナを形成するステップを含む。
システムボードに結合したメインプロセッサを有するシステムボード、
前記システムボードとアンテナに結合したパッケージ基板を有するパッケージ、を有するコンピューティングデバイスに関する。前記アンテナは、前記基板に接続された合成磁性層の上に形成される。前記パッケージは、半導体回路ダイを包含してよく、アンテナは、前記磁性層を貫通して延びるビアにより前記ダイへ結合されてよい。前記パッケージは、パッケージカバーを包含してよく、前記磁性層は前記パッケージカバーの上にスクリーン印刷される。前記磁性層は、パッケージの基板の上にあってよく、パッケージは、前記基板、磁性層及びアンテナの上に形成されたパッケージカバーをさらに有する。アンテナは、銅メッキで形成されてよい。磁性層は、エポキシ樹脂内で硬化した磁性ナノ粒子で形成されてよく、硬化されながら磁界を使用して整列されてよい。
12 ビルドアップ層(BUL)、基板
14 ソルダ―ボール
18 ソルダ―ボール
20 アンテナ構造
22 ナノ粒子磁性コンポジット
24 ビア
28 個別部品
30 成形コンパウンド
Claims (25)
- システムボードへ電気接続するため構成された基板:
前記基板に接続された合成磁性層;及び
前記磁性層の上のアンテナ;
を有する半導体パッケージ。 - 半導体回路ダイをさらに有し、及び
前記アンテナは、前記磁性層を貫通して延びるビアを有する前記ダイに結合される、
請求項1に記載のパッケージ。 - 前記ダイは、前記アンテナに対向する前記基板に結合され、及び
前記アンテナは、基板内に形成されたビアにより前記回路に結合される、
請求項2に記載のパッケージ。 - パッケージカバーをさらに有し、及び
前記磁性層は前記パッケージカバーの上にスクリーン印刷される、
請求項1,2もしくは3に記載のパッケージ。 - 前記パッケージカバーは成形コンパウンドから形成される、請求項4に記載のパッケージ。
- パッケージカバーをさらに有し、及び
前記磁性層は前記基板の上にあり、前記パッケージカバーは前記基板、前記磁性層及び前記アンテナの上に形成される、
請求項1に記載のパッケージ。 - 前記アンテナは銅メッキから形成される、請求項1に記載のパッケージ。
- 戦記磁性層は、エポキシ樹脂中で硬化した磁性ナノ粒子から形成される、請求項1に記載のパッケージ。
- 前記ナノ粒子を、硬化しながら磁界を使用して整列させる、請求項8に記載のパッケージ。
- 前記磁性ナノ粒子は、不動態化シランで被覆したシリカ粒子を有する、請求項8に記載のパッケージ。
- 前記磁性層は高分子バインダを有する、請求項1に記載のパッケージ。
- 整列した磁区を有する合成磁気ナノコンポジット材料;
前記ナノコンポジット材料内に埋め込まれた導体;及び
前記導体へ接続するため前記ナノコンポジット材料を貫通して延びるコンタクトパッド;
を有する電子部品。 - 前記導体は銅ストリップであり、
前記コンタクトパッドはインダクタを形成するため、前記ストリップの対向する末端にそれぞれ存在する、請求項12に記載の電子部品。 - 前記銅ストリップは、シングルターンインダクタを形成するため、直線状である、請求項13に記載の電子部品。
- 前記ナノコンポジット材料及び導体を保持する基板、及び前記ナノコンポジット材料を分離及び収容するための誘電体の壁をさらに有する、請求項12、13又は14に記載の電子部品。
- 基板を有するパッケージに磁性ナノコンポジット材料を適用するステップであって、前記ナノコンポジット材料はエポキシ樹脂中に磁性ナノ粒子を有するステップ;
前記磁性ナノ粒子の磁界を整列させるステップ;
前記磁性ナノ粒子の整列を維持するため、前記樹脂を硬化するステップ;
前記ナノコンポジット材料に導電性通路を適用するステップ;及び
電子デバイスを完成させるため、前記導電性通路へのコネクタを形成するステップ;
を有する方法。 - 前記導電性通路はシングルターンインダクタコイルである、請求項16に記載の方法。
- 前記磁界を整列させるステップは、前記エポキシ樹脂を加熱すること、磁界を印加すること、及び前記樹脂を印加された磁界により硬化させることを有する、請求項16又は17に記載の方法。
- 前記磁性ナノ粒子は不動態化され、シリカ被覆されている、請求項16又は17に記載の方法。
- 前記磁性ナノ粒子はシラン化合物で表面処理されている、請求項19に記載の方法。
- 前記樹脂は有機熱硬化樹脂である、請求項20に記載の方法。
- 前記ナノコンポジット材料上にアンテナを形成すること、及び前記コネクタに前記アンテナを接続することをさらに有する、請求項16に記載の方法。
- 前記基板の上でカバーを形成することをさらに有し、
前記ナノコンポジット材料を適用するステップは、前記カバーの上で前記材料を適用することを含み、及び
前記アンテナを形成するステップは、前記ナノコンポジット材料の上で前記アンテナを形成することを含む、
請求項16乃至22の何れか一項に記載の方法。 - 複数の磁性ナノ粒子;及び
有機熱硬化樹脂;
を有する合成磁性ナノコンポジット材料。 - 前記磁性ナノ粒子は不動態化され、シリカ被覆され、シラン化合物で表面処理され、80体積%過剰の樹脂を充填し、そして硬化されながら磁界を使用して整列されている、請求項24に記載の材料。
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US13/853,977 US9461355B2 (en) | 2013-03-29 | 2013-03-29 | Method apparatus and material for radio frequency passives and antennas |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016103702A (ja) * | 2014-11-27 | 2016-06-02 | アルプス電気株式会社 | 通信モジュール |
JP2020521338A (ja) * | 2017-04-07 | 2020-07-16 | タクトテック オーイー | 電子アセンブリの製造方法及び電子アセンブリ |
JP2021034453A (ja) * | 2019-08-20 | 2021-03-01 | 富士通株式会社 | パッケージ基板及び電子機器 |
JP2021514571A (ja) * | 2018-02-21 | 2021-06-10 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 拡張可能フェーズド・アレイ・パッケージを実現する装置および方法 |
Families Citing this family (67)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9431369B2 (en) | 2012-12-13 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Antenna apparatus and method |
US9461355B2 (en) * | 2013-03-29 | 2016-10-04 | Intel Corporation | Method apparatus and material for radio frequency passives and antennas |
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US9887162B2 (en) * | 2013-12-18 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Molding structure for wafer level package |
US9652649B2 (en) * | 2014-07-02 | 2017-05-16 | Auden Techno Corp. | Chip-type antenna device and chip structure |
KR102311084B1 (ko) * | 2014-08-07 | 2021-10-12 | 인텔 코포레이션 | 패시브 평면형 디바이스를 갖는 rf 회로 장치 및 패시브 평면형 디바이스를 갖는 rf 회로 시스템 |
EP3614410B1 (en) * | 2014-10-10 | 2024-03-20 | Finder S.P.A. | Programmable switch |
DE102014223653B4 (de) * | 2014-11-20 | 2023-08-03 | Zf Friedrichshafen Ag | Elektrische Schaltung und Verfahren zum Herstellen einer elektrischen Schaltung für ein Fahrzeug |
US10502987B2 (en) * | 2015-04-07 | 2019-12-10 | Lumentum Operations Llc | High bandwidth RF or microwave interconnects for optical modulators |
US20170040266A1 (en) | 2015-05-05 | 2017-02-09 | Mediatek Inc. | Fan-out package structure including antenna |
US10290585B2 (en) * | 2015-05-31 | 2019-05-14 | Skyworks Solutions, Inc. | Shielded module having compression overmold |
US10043769B2 (en) * | 2015-06-03 | 2018-08-07 | Micron Technology, Inc. | Semiconductor devices including dummy chips |
JP2017121032A (ja) * | 2015-06-30 | 2017-07-06 | 住友電気工業株式会社 | 高周波装置 |
US10636753B2 (en) * | 2015-07-29 | 2020-04-28 | STATS ChipPAC Pte. Ltd. | Antenna in embedded wafer-level ball-grid array package |
EP3332361A4 (en) * | 2015-08-06 | 2019-03-13 | Thin Film Electronics ASA | WIRELESS LABELS WITH PRINTED STUD BUMPS AND METHOD FOR THE PRODUCTION AND USE THEREOF |
CN105161468A (zh) * | 2015-10-10 | 2015-12-16 | 中国电子科技集团公司第三十八研究所 | 一种射频芯片及其无源器件的封装结构和封装方法 |
US9953936B2 (en) * | 2015-10-30 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US9711443B2 (en) | 2015-11-14 | 2017-07-18 | Intel Corporation | Magnetic alignment for flip chip microelectronic devices |
US10573608B2 (en) * | 2015-12-22 | 2020-02-25 | Intel Corporation | Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on a die fabric on package |
WO2017111975A1 (en) * | 2015-12-22 | 2017-06-29 | Intel Corporation | Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric |
CN108292651B (zh) * | 2015-12-22 | 2022-08-23 | 英特尔公司 | 利用集成在管芯间结构上的化合物半导体器件设计的微电子器件 |
CN106129628A (zh) * | 2016-06-17 | 2016-11-16 | 上海易码信息科技有限公司 | 磁脉冲发射天线制造方法 |
KR102587131B1 (ko) * | 2016-08-23 | 2023-10-10 | 삼성전자주식회사 | 나노 안테나 구조체 및 그 제조 방법 |
US10811182B2 (en) | 2016-10-28 | 2020-10-20 | Samsung Electro-Mechanics Co., Ltd. | Inductor and method of manufacturing the same |
DE102017200121A1 (de) * | 2017-01-05 | 2018-07-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wafer Level Package mit zumindest einem integrierten Antennenelement |
DE102017200122B4 (de) | 2017-01-05 | 2020-07-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wafer Level Package mit integrierten Antennen und Mittel zum Schirmen, System dieses umfassend und Verfahren zu dessen Herstellung |
DE102017200124A1 (de) | 2017-01-05 | 2018-07-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Wafer Level Packages mit integrierter oder eingebetteter Antenne |
US10074622B2 (en) * | 2017-02-06 | 2018-09-11 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
EP3364457A1 (en) * | 2017-02-15 | 2018-08-22 | Nxp B.V. | Integrated circuit package including an antenna |
DE102017104046A1 (de) * | 2017-02-27 | 2018-08-30 | Infineon Technologies Ag | Nahfeld-datenübertragungsring |
CN107068659B (zh) * | 2017-04-19 | 2023-11-17 | 华进半导体封装先导技术研发中心有限公司 | 一种扇出型芯片集成天线封装结构及方法 |
US10490880B2 (en) | 2017-05-26 | 2019-11-26 | Qualcomm Incorporation | Glass-based antenna array package |
US10511080B2 (en) | 2017-08-18 | 2019-12-17 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package |
KR102117463B1 (ko) * | 2017-08-18 | 2020-06-02 | 삼성전기주식회사 | 팬-아웃 반도체 패키지 |
US10685924B2 (en) * | 2017-08-24 | 2020-06-16 | Qualcomm Incorporated | Antenna-on-package arrangements |
KR102019354B1 (ko) * | 2017-11-03 | 2019-09-09 | 삼성전자주식회사 | 안테나 모듈 |
TWI741228B (zh) * | 2017-11-22 | 2021-10-01 | 新加坡商星科金朋有限公司 | 半導體裝置及製造其之方法 |
KR102028714B1 (ko) * | 2017-12-06 | 2019-10-07 | 삼성전자주식회사 | 안테나 모듈 및 안테나 모듈 제조 방법 |
US10424550B2 (en) * | 2017-12-19 | 2019-09-24 | National Chung Shan Institute Of Science And Technology | Multi-band antenna package structure, manufacturing method thereof and communication device |
US11251113B2 (en) * | 2017-12-27 | 2022-02-15 | Intel Corporation | Methods of embedding magnetic structures in substrates |
US10396046B2 (en) * | 2017-12-29 | 2019-08-27 | Intel Corporation | Substrate assembly with magnetic feature |
US10826194B2 (en) | 2018-02-21 | 2020-11-03 | International Business Machines Corporation | Scalable phased array package |
US11005155B2 (en) | 2018-03-08 | 2021-05-11 | Sony Corporation | Microwave antenna apparatus and package |
KR102039711B1 (ko) * | 2018-03-13 | 2019-11-01 | 삼성전자주식회사 | 팬-아웃 부품 패키지 |
US11189905B2 (en) * | 2018-04-13 | 2021-11-30 | International Business Machines Corporation | Integrated antenna array packaging structures and methods |
US11443892B2 (en) * | 2018-06-27 | 2022-09-13 | Intel Corporation | Substrate assembly with encapsulated magnetic feature |
US10672859B2 (en) | 2018-06-27 | 2020-06-02 | Intel Corporation | Embedded magnetic inductor |
US11373802B2 (en) * | 2018-07-10 | 2022-06-28 | GM Global Technology Operations LLC | Magnet manufacturing by additive manufacturing using slurry |
KR102059814B1 (ko) * | 2018-07-12 | 2019-12-27 | 삼성전기주식회사 | 안테나 모듈 |
KR102066904B1 (ko) * | 2018-09-18 | 2020-01-16 | 삼성전자주식회사 | 안테나 모듈 |
KR102595864B1 (ko) * | 2018-12-07 | 2023-10-30 | 삼성전자주식회사 | 반도체 패키지 |
CN110379778A (zh) * | 2019-07-23 | 2019-10-25 | 杭州晶通科技有限公司 | 一种低损耗无线射频芯片封装及与之配合的pcb |
US11508678B2 (en) | 2019-08-01 | 2022-11-22 | Mediatek Inc. | Semiconductor package structure including antenna |
US11139268B2 (en) * | 2019-08-06 | 2021-10-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method of manufacturing the same |
CN110739292A (zh) * | 2019-09-02 | 2020-01-31 | 上海先方半导体有限公司 | 一种3d封装结构及其制作方法 |
CN110635221A (zh) * | 2019-09-20 | 2019-12-31 | 上海先方半导体有限公司 | 一种应用于天线产品的bga封装结构和方法 |
US11101540B2 (en) | 2019-10-02 | 2021-08-24 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor devices and methods of manufacturing semiconductor devices |
US11101541B2 (en) * | 2019-10-03 | 2021-08-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor assembly and method for manufacturing the same |
KR20210157595A (ko) | 2020-06-22 | 2021-12-29 | 삼성전자주식회사 | 반도체 패키지 |
US20220190128A1 (en) * | 2020-12-16 | 2022-06-16 | Intel Corporation | Contact over active gate structures with tapered gate or trench contact for advanced integrated circuit structure fabrication |
US20220293327A1 (en) * | 2021-03-11 | 2022-09-15 | Intel Corporation | Coreless electronic substrates having embedded inductors |
US11842946B2 (en) * | 2021-03-26 | 2023-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package having an encapsulant comprising conductive fillers and method of manufacture |
US11978729B2 (en) * | 2021-07-08 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device package having warpage control and method of forming the same |
US11735530B2 (en) * | 2021-08-25 | 2023-08-22 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of integrating RF antenna interposer with semiconductor package |
US20230140748A1 (en) * | 2021-10-29 | 2023-05-04 | STATS ChipPAC Pte. Ltd. | Antenna-in-Package Devices and Methods of Making |
US20230078536A1 (en) * | 2021-09-14 | 2023-03-16 | Apple Inc. | Conductive features on system-in-package surfaces |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004529508A (ja) * | 2001-06-08 | 2004-09-24 | バクームシュメルツェ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 誘導素子とその製造方法 |
JP2006319867A (ja) * | 2005-05-16 | 2006-11-24 | Matsushita Electric Ind Co Ltd | アンテナモジュールおよびこれを用いた無線機器 |
JP2007514308A (ja) * | 2003-12-10 | 2007-05-31 | フリースケール セミコンダクター インコーポレイテッド | 磁性体で包囲された電気導体から成る素子の生産方法 |
JP2008192283A (ja) * | 2007-01-23 | 2008-08-21 | Internatl Business Mach Corp <Ibm> | 重合体中の磁性ナノ粒子の化学媒介分散液の生成および整列方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2335377C (en) * | 2001-03-05 | 2010-12-14 | Bioneer Corporation | Bio-molecular microchip and manufacturing process thereof |
TWI314153B (en) * | 2002-07-12 | 2009-09-01 | Mitsui Chemicals Inc | Process for production of oxyalkylene derivative |
US7135952B2 (en) * | 2002-09-16 | 2006-11-14 | Multi-Fineline Electronix, Inc. | Electronic transformer/inductor devices and methods for making same |
US20060088971A1 (en) * | 2004-10-27 | 2006-04-27 | Crawford Ankur M | Integrated inductor and method of fabrication |
CN101401114B (zh) * | 2006-04-03 | 2011-03-16 | 松下电器产业株式会社 | 天线内置半导体存储模块 |
US8269319B2 (en) | 2006-10-13 | 2012-09-18 | Tessera, Inc. | Collective and synergistic MRAM shields |
KR100836536B1 (ko) | 2006-12-21 | 2008-06-10 | 한국과학기술원 | 컨덕터의 안테나에 대한 영향이 감소된 에스아이피 및 그설계 방법 |
JP5362186B2 (ja) | 2007-03-24 | 2013-12-11 | 株式会社ダイセル | ナノインプリント用樹脂組成物 |
JP5294570B2 (ja) | 2007-04-26 | 2013-09-18 | 株式会社小松製作所 | 基板温度制御装置用ステージ |
JP4773479B2 (ja) * | 2007-06-21 | 2011-09-14 | ソニーケミカル&インフォメーションデバイス株式会社 | 磁性シート及び磁性シートの製造方法、並びに、アンテナ及び携帯通信機器 |
US20120249375A1 (en) * | 2008-05-23 | 2012-10-04 | Nokia Corporation | Magnetically controlled polymer nanocomposite material and methods for applying and curing same, and nanomagnetic composite for RF applications |
US7906376B2 (en) | 2008-06-30 | 2011-03-15 | Intel Corporation | Magnetic particle-based composite materials for semiconductor packages |
US20120217431A1 (en) | 2009-10-16 | 2012-08-30 | Mitsumi Electric Co. Ltd. | Magnetic material for high frequency applications and high frequency device |
US9007273B2 (en) | 2010-09-09 | 2015-04-14 | Advances Semiconductor Engineering, Inc. | Semiconductor package integrated with conformal shield and antenna |
CN102786810B (zh) * | 2011-05-18 | 2014-12-31 | 中国石油化工股份有限公司 | 一种磁性聚合物颗粒及其制备方法和应用 |
JP5729186B2 (ja) * | 2011-07-14 | 2015-06-03 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US10128035B2 (en) * | 2011-11-22 | 2018-11-13 | Volterra Semiconductor LLC | Coupled inductor arrays and associated methods |
US9461355B2 (en) * | 2013-03-29 | 2016-10-04 | Intel Corporation | Method apparatus and material for radio frequency passives and antennas |
JP6333749B2 (ja) * | 2015-02-02 | 2018-05-30 | 富士フイルム株式会社 | 波長変換部材及びそれを備えたバックライトユニット、液晶表示装置、波長変換部材の製造方法 |
-
2013
- 2013-03-29 US US13/853,977 patent/US9461355B2/en active Active
-
2014
- 2014-03-26 JP JP2014063211A patent/JP5951669B2/ja active Active
- 2014-03-27 KR KR1020140035863A patent/KR20140118889A/ko active Application Filing
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- 2014-03-27 BR BRBR102014007462-7A patent/BR102014007462A2/pt not_active IP Right Cessation
- 2014-03-28 CN CN201410121564.0A patent/CN104078451B/zh active Active
-
2016
- 2016-07-11 US US15/206,428 patent/US10122089B2/en active Active
- 2016-08-17 KR KR1020160104116A patent/KR101713037B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004529508A (ja) * | 2001-06-08 | 2004-09-24 | バクームシュメルツェ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 誘導素子とその製造方法 |
JP2007514308A (ja) * | 2003-12-10 | 2007-05-31 | フリースケール セミコンダクター インコーポレイテッド | 磁性体で包囲された電気導体から成る素子の生産方法 |
JP2006319867A (ja) * | 2005-05-16 | 2006-11-24 | Matsushita Electric Ind Co Ltd | アンテナモジュールおよびこれを用いた無線機器 |
JP2008192283A (ja) * | 2007-01-23 | 2008-08-21 | Internatl Business Mach Corp <Ibm> | 重合体中の磁性ナノ粒子の化学媒介分散液の生成および整列方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016103702A (ja) * | 2014-11-27 | 2016-06-02 | アルプス電気株式会社 | 通信モジュール |
JP2020521338A (ja) * | 2017-04-07 | 2020-07-16 | タクトテック オーイー | 電子アセンブリの製造方法及び電子アセンブリ |
JP2021514571A (ja) * | 2018-02-21 | 2021-06-10 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 拡張可能フェーズド・アレイ・パッケージを実現する装置および方法 |
JP7287971B2 (ja) | 2018-02-21 | 2023-06-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 拡張可能フェーズド・アレイ・パッケージを実現する装置および方法 |
JP2021034453A (ja) * | 2019-08-20 | 2021-03-01 | 富士通株式会社 | パッケージ基板及び電子機器 |
JP7367381B2 (ja) | 2019-08-20 | 2023-10-24 | 富士通株式会社 | パッケージ基板及び電子機器 |
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CN104078451B (zh) | 2017-09-22 |
EP2784814A2 (en) | 2014-10-01 |
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EP2784814A3 (en) | 2014-12-10 |
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US10122089B2 (en) | 2018-11-06 |
JP5951669B2 (ja) | 2016-07-13 |
US20160322707A1 (en) | 2016-11-03 |
EP2784814B1 (en) | 2019-12-25 |
KR20140118889A (ko) | 2014-10-08 |
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US20140293529A1 (en) | 2014-10-02 |
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