JP2014185332A - 酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤 - Google Patents
酸化防止処理方法、これを用いた電子デバイスの製造方法、及びこれらに用いられる金属防食剤 Download PDFInfo
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- JP2014185332A JP2014185332A JP2014030911A JP2014030911A JP2014185332A JP 2014185332 A JP2014185332 A JP 2014185332A JP 2014030911 A JP2014030911 A JP 2014030911A JP 2014030911 A JP2014030911 A JP 2014030911A JP 2014185332 A JP2014185332 A JP 2014185332A
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- copper
- metal anticorrosive
- amino
- antioxidant
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Images
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
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Abstract
【解決手段】電子デバイスに含まれる銅もしくは銅合金の表面に、アミノ基を有する5員の含窒素複素芳香族化合物を含有する金属防食剤を接触させる銅もしくは銅合金表面の酸化防止方法。
【選択図】図1
Description
本発明は、半導体基板または半導体素子、プリント配線基板等の電子デバイスに含まれる各部材を損傷せずに、そこに配された銅もしくは銅合金(以下、これらを総称して「銅材料」ということがある。)の表面に酸化防止性を付与する酸化防止方法、これを利用した電子デバイスの製造方法の提供を目的とする。
〔1〕電子デバイスに含まれる銅もしくは銅合金の表面に、アミノ基を有する5員の含窒素複素芳香族化合物を含有する金属防食剤を接触させる銅もしくは銅合金表面の酸化防止方法。
〔2〕上記金属防食剤として、実質的に、アミノ基を有する5員の含窒素複素芳香族化合物のみを含有する〔1〕に記載の酸化防止方法。
〔3〕上記金属防食剤として、さらに有機アミン化合物を含有する〔1〕または〔2〕に記載の酸化防止方法。
〔4〕上記含窒素複素芳香族化合物が下記式(A1)〜(A4)のいずれかで表される〔1〕〜〔3〕のいずれか1つに記載の酸化防止方法。
〔5〕上記金属防食剤中の含窒素複素芳香族化合物の含有率が、0.01〜5質量%である〔1〕〜〔4〕のいずれか1つに記載の酸化防止方法。
〔6〕上記金属防食剤中の有機アミン化合物の含有率が、0.01〜5質量%である〔3〕〜〔5〕のいずれか1つに記載の酸化防止方法。
〔7〕上記有機アミン化合物を、上記含窒素複素芳香族化合物100質量部に対して、10質量部以上1000質量部以下で含有させる〔3〕〜〔6〕のいずれか1つに記載の酸化防止方法。
〔8〕上記有機アミン化合物のClogP値が0以上3以下である〔3〕〜〔7〕のいずれか1つに記載の酸化防止方法。
〔9〕上記金属防食剤は上記含窒素複素芳香族化合物を溶媒に含有させてなり、上記溶媒が水を主成分とする〔1〕〜〔8〕のいずれか1つに記載の酸化防止方法。
〔10〕上記含窒素複素芳香族化合物が、3,5−ジアミノ−1,2,4−トリアゾール、4−アミノ−1,2,4−トリアゾール、3−アミノ−1,2,4−トリアゾール、5−アミノテトラゾール、3−アミノ−1,2,4−トリアゾール−5−カルボン酸、3−アミノピラゾール、3−アミノ−1−メチルピラゾール、3−アミノ−5−メチルピラゾール、1,2,4−トリアゾール−3−カルボキサミド、または3−アミノ−5−メチルチオ−1,2,4−トリアゾールである〔1〕〜〔9〕のいずれか1つに記載の酸化防止方法。
〔11〕上記含窒素複素芳香族化合物が、5−アミノテトラゾールである〔10〕に記載の酸化防止方法。
〔12〕上記有機アミン化合物が炭素数1〜20のアルキルキルアミンまたは炭素数7〜15のアラルキルアミンである〔3〕〜〔11〕のいずれか1つに記載の酸化防止方法。
〔13〕上記銅もしくは銅合金がはんだを配設するための端子をなす〔1〕〜〔12〕のいずれか1つに記載の酸化防止方法。
〔14〕上記金属防食剤を、浸漬、流下、滴下、または噴霧により上記銅もしくは銅合金表面に接触させる〔1〕〜〔13〕のいずれか1つに記載の酸化防止方法。
〔15〕上記金属防食剤を、枚葉式薬液処理装置を用いて上記銅もしくは銅合金表面に接触させる〔1〕〜〔14〕のいずれか1つに記載の酸化防止方法。
〔16〕〔1〕〜〔15〕のいずれか1つに記載の方法により上記電気デバイスの銅もしくは銅合金表面に酸化防止処理を施し、上記処理を介して製造する電子デバイスの製造方法。
〔17〕上記酸化防止処理の後に、上記銅もしくは銅合金の表面にはんだ付けを行う〔16〕に記載の電子デバイスの製造方法。
〔18〕電子デバイスに含まれる銅もしくは銅合金の表面に、アミノ基を有する含窒素複素芳香族化合物を含む保護膜を形成した電子デバイス。
〔19〕アミノ基を有する5員の含窒素複素芳香族化合物を含有し、銅または銅合金の表面に酸化防止性を付与する金属防食剤。
〔20〕上記含窒素複素芳香族化合物を水を主成分とする溶媒に含有させた水系組成物である〔19〕に記載の金属防食剤。
〔21〕さらに有機アミン化合物を含有する〔19〕または〔20〕に記載の金属防食剤。
〔22〕上記有機アミン化合物を、上記含窒素複素芳香族化合物100質量部に対して、10質量部以上1000質量部以下で含有させる〔21〕に記載の金属防食剤。
〔23〕上記有機アミン化合物のClogP値が0以上3以下である〔21〕または〔22〕に記載の金属防食剤。
(含窒素複素芳香族化合物)
本発明の金属防食剤は下記式(A1)〜(A4)のいずれかで表される化合物を含有してなることが好ましい。なかでも、式(A1)で表される化合物が、加熱により酸化しても変色しないという観点で特に好ましい。なお、上記銅表面の外観変化に伴って引き続くはんだ工程等の性能が劣る傾向にあり、半導体基板の製造品質管理において有意である。
なかでも、アミノ基含有基は、アミノ基(−NH2)、炭素数1〜3のアルキルアミノ基(−RNH2:Rはアルキレン基)、カルバモイル基(カルボキサミド基)(−CONH2)であることが好ましい。
上記含窒素複素芳香族化合物は、1種を単独で用いても、2種以上を組み合わせて用いてもよい。
従来、銅材料の表面にアゾール化合物を適用する例があるが、これは銅のマイグレーション抑制作用を利用するものである。そこでは銅内部からのイオン溶出を抑制するために、アゾール化合物による表面被覆を形成する。具体的にその作用を発現させるためには、表面被覆層を厚く形成することが重要となる。一方、本発明では熱や水分から銅を守るために、上述したアミノ基を有する含窒素複素芳香族化合物の表面被覆を形成する。そのため、求められる性能がマイグレーション抑制を行うものとは異なる。かかる観点から、本発明の好ましい実施形態においては、隙間のない分子吸着膜のようにうすく吸着力のある表面被覆を形成し上記の効果を実現している。
本発明の金属防食剤は有機アミン化合物を含有することが好ましく、上記有機アミン化合物は炭化水素部位及びアミン部位を有することが好ましい。上記炭化水素部位とは炭素及び水素で構成された部位(原子群)をいうが、これに任意の置換基を有していてもよい。ただし、この置換基に水酸基もしくは水酸基含有基は含まれないことが好ましい。上記任意の置換基は、カルボキシル基、スルホ基、アルコキシ基(炭素数1〜12が好ましく、1〜6がより好ましく、1〜3が特に好ましい)が好ましい。炭化水素部位のさらに好ましいものとしては、炭素数1〜20のアルキル基、炭素数6〜14のアリール基、炭素数7〜15のアラルキル基、炭素数2〜10のアルケニル基が挙げられる。
logPは、分配係数P(Partition Coefficient)の常用対数を意味し、ある有機化合物が油(一般的には1−オクタノール)と水の2相系の平衡でどのように分配されるかを定量的な数値として表す物性値であり、以下の式で示される。
logP = log(Coil/Cwater)
式中、Coilは油相中の化合物のモル濃度を、Cwaterは水相中の化合物のモル濃度を表す。
logPの値が0をはさんでプラスに大きくなると油溶性が増し、マイナスで絶対値が大きくなると水溶性が増すことを意味し、有機化合物の水溶性と負の相関があり、有機化合物の親疎水性を見積るパラメータとして広く利用されている。
いくつかのアミン化合物についてClogP値を下記に例示する。
エチルアミン -0.135
n−ヘキシルアミン 1.981
ジオクチルアミン 6.888
2−エチルヘキシルアミン 2.909
ベンジルアミン 1.094
上記有機アミン化合物は、1種を単独で用いても、2種以上を組み合わせて用いてもよい。
本発明においては、さらに防菌剤を用いることが好ましい。防菌剤としては、フェノール構造、ピリジン構造、トリアジン構造、モルホリン構造、イソチアゾリン構造、ピリジニウム構造、4級アンモニウム構造のいずれかを含む化合物を用いることが好ましい。具体例としては、フェノキシエタノール、2−メチル−4−イソチアゾリン−3−オン、1,2−ベンゾイソチアゾリン−3−オン、5−クロロ−2−メチルー4−イソチアゾリン−3−オン、o−フェニルフェノール、3−メチル−4−クロロフェノール、2−メルカプトピリジン−N−オキヂソナトリウム、ヘキサハイドロ−1,3,5−トリエチル−s−トリアジン、グルタルアルデヒド、4−(2−ニトロブチル)モルホリン、4,4‘−(2−エチル−2−ニトロトリメチレン)ジモルホリン、塩化テトラメチルアンモニウム、塩化ドデシルピリジニウム、などが挙げられる。
防菌剤は、金属防食剤中で、0.001質量%以上で含有されることが好ましく、0.01質量%以上で含有されることがより好ましく、0.1質量%以上で含有されることが特に好ましい。上限としては、30質量%以下で含有されることが好ましく、5質量%以下で含有されることがより好ましく、3質量%以下で含有されることが特に好ましい。この範囲で防菌剤を適用することで、酸化防止効果を阻害せずに十分な防菌効果を得ることができ好ましい。
上記防菌剤は、1種を単独で用いても、2種以上を組み合わせて用いてもよい。
本発明の金属防食剤には、その媒体として水媒体が適用されることが好ましく、各含有成分が均一に溶解した水溶液であることが好ましい。水(水媒体)の含有量は、金属防食剤の全質量に対して50〜99.5質量%であることが好ましく、55〜95質量%であることが好ましい。このように、水を主成分(50質量%以上)とする場合、有機溶剤の比率の高い場合と比較して、安価であり、環境に適合する点で好ましい。水(水媒体)としては、本発明の効果を損ねない範囲で溶解成分を含む水性媒体であってもよく、あるいは不可避的な微量混合成分を含んでいてもよい。なかでも、蒸留水やイオン交換水、あるいは超純水といった浄化処理を施された水が好ましく、半導体製造に使用される超純水を用いることが特に好ましい。
本発明においては、特に顕著な防食効果を発揮させるために、実質的に前記のアミノ基を有する5員の含窒素複素芳香族化合物と水のみからなる金属防食剤水溶液とすることが好ましい。ここで「実質的に」としたのは、本発明の効果を損ねない範囲で微量不純物を含んでも良い意味である。
本発明においては、金属防食剤中に水溶性有機溶媒を含有させることも好ましい。ただし、安全性の面から水を50質量%以上含むことが好ましい。また、水溶性有機溶媒は表面張力や粘度が低く、水媒体に均一に分散するあるいは溶解するものであることが好ましく、所定の含有量で均一に溶解するものであることが好ましい。これにより、表面張力や粘度を低くすることで、枚葉式薬液処理装置により適応した薬液とすることができ好ましい。
上記水溶性有機溶媒は、1種を単独で用いても、2種以上を組み合わせて用いてもよい。
本発明における金属防食剤には界面活性剤を含有させてもよく、具体的に、アニオン界面活性剤ないしノニオン界面活性剤を含有させてもよい。
アニオン界面活性剤とは、特に限定されないが、典型的には、親水基と親油基とを分子内に有し、親水基の部分が水溶液中で解離してアニオンとなる、あるいはアニオン性を帯びる化合物を意味する。ここでアニオン界面活性剤は、水素原子を伴う酸として存在しても、それが解離したアニオンであっても、その塩であってもよい。アニオン性を帯びていれば、非解離性のものでもよく、酸エステルなども含まれる。
ノニオン界面活性剤としては、炭素数が8以上の疎水性基と1つ以上の親水性基を有する。疎水性基として好ましくは、炭素数14以上のアルキル基、アルキニル基、シクロアルキル基、アリール基、複素環基、及びこれらの基を2以上組み合わせてなる基から選ばれるものである。親水性基としては、1つ以上のO、N、S原子を含むものが好ましい。さらに親水性基の好ましいものとして、エチレンオキサイド基もしくはプロピレンオキサイド基を有するものが挙げられ、上記両基からなる繰り返し単位を合計で6つ以上(好ましくは6以上100以下)もつ親水性基を有する非イオン性界面活性剤が挙げられる。このとき、疎水性基の炭素数は14〜50であることが好ましく、16〜30であることがより好ましい。エチレンオキサイド基又はプロピレンオキサイド基の炭素数の合計は、12〜1000の整数であることが好ましく、12〜200の整数であることがより好ましい。
式(A) R−(CH2CH2O)nH
式(B) R−(CH2CH2CH2O)mH
式(C) R−(CH2CH2O)n(CH2CH2CH2O)mH
Rは炭素数10以上の直鎖又は分岐のある炭化水素基、n,mは1以上20以下の整数を表す。
上記界面活性剤は、1種を単独で用いても、2種以上を組み合わせて用いてもよい。
本発明における金属防食剤は、その原料を複数に分割したキットとしてもよい。例えば、その一例として、第1液として含窒素複素芳香族化合物を水媒体に含有する液組成物を準備し、第2液として有機アミン化合物や水溶性有機溶媒を水媒体に含有する液組成物を準備する態様が挙げられる。その使用例としては、両液を混合して金属防食剤を調液し、その後適時に上記保護処理に適用する態様が好ましい。
本発明の金属防食剤は、対腐食性等が問題とならない限り、任意の容器に充填して保管、運搬、そして使用することができる。また、半導体用途向けに、容器のクリーン度が高く、不純物の溶出が少ないものが好ましい。使用可能な容器としては、アイセロ化学(株)製の「クリーンボトル」シリーズ、コダマ樹脂工業(株)製の「ピュアボトル」などが挙げられるが、これらに限定されるものではない。
本発明の金属防食剤は、その使用用途に鑑み、液中の不純物、例えばメタル分などは少ないことが好ましい。
上記金属防食剤を適用して酸化防止処理が施される対象は特に限定されず、半導体基板または半導体素子に広く適用できる。上述した実施形態のような半導体素子の一部の銅材料部材表面の他、下記のようなものが挙げられる。すなわち、BGAに適用される電子部品のパッケージにおいて、はんだバンプが配設される部分の端子(銅材料)表面、あるいは、フリップ・チップ接続に適用されるCSPにおいてはんだボールが配設される端子(銅材料)表面の保護処理などが挙げられる。
本発明の酸化防止方法においては上記のように銅材料に金属防食剤を適用することを前提とするが、本発明の金属防食剤は銅以外の遷移金属(金、白金、ニッケル)や典型金属(アルミニウム)等に適用することを妨げるものではない。なお、半導体基板等に設けられる銅膜は端子材料などの銅板とは金属組織が異なり、表面保護性においてもその挙動が異なることが予想される。
本実施形態において酸化防止処理を行う条件は特に限定されないが、枚葉式の処理であっても浸漬式(バッチ式)の処理であってもよい。枚葉式の処理においては、半導体基板を所定の方向に搬送もしくは回転させ、その空間に薬液を付与(噴射、流下、滴下等)して上記半導体基板に接触させる。他方、バッチ式の処理においては、液浴に半導体基板を浸漬させ、上記液浴内で半導体基板と接触させる。これらの方式は基板の構造や保護対象物等により適宜使い分けられればよい。
吐出口(ノズル)の移動速度は特に限定されないが、0.1cm/s以上であることが好ましく、1cm/s以上であることがより好ましい。一方、その上限としては、30cm/s以下であることが好ましく、15cm/s以下であることがより好ましい。移動軌跡線は直線でも曲線(例えば円弧状)でもよい。いずれの場合にも移動速度は実際の軌跡線の距離とその移動に費やされた時間から算出することができる。
上記の金属防食剤(保護液)は、その適用後に水等によりその過剰分を洗い流しておくことが好ましい。リンスに用いられる液体は水であることが好ましく、例えば、上記(水媒体)の項で説明した水媒体が挙げられる。リンスの条件は特に限定されないが、室温(約25℃)でかけ流し(流量0.5〜3L/min、10〜60秒間)により行うことが好ましい。
図2の工程[V]で行われるはんだ層の形成はどのような方法によってもよく、この種の製品に適用される通常の方法によることができる。はんだの種類としても公知のものを使用することができ、例えば、SnAg系無鉛はんだや、SnAgCu系のはんだを用いることができる。本発明の金属防食剤によれば、リンスによる洗い流し性が良く(工程[III]、このはんだの敷設性を過度に阻害することがなく好ましい。その後の、リフロー(ボンディング)もこの種の製品における通常の条件および手順によればよい(工程[VI])。さらに具体的には、上記の銅端子の上に無鉛はんだを介して部品を仮工程し、100℃〜300℃の炉の中で所定時間リフローすることによりはんだ付けを行うことができる。炉内の雰囲気ははんだ付けする部品等に応じて適宜設定すればよく、大気中でも不活性ガス中でもよい。本発明においては、その効果がより好適に発揮される観点から、無鉛はんだを用いることが好ましい。無鉛はんだとしては、SnAgCu系、SnZnBi系、SnCu系、SnAgInBi系、SnZnAl系などの入手可能なものを適宜選定して適用すればよい。
図2では示していないが、本発明においては、金属防食剤の適用(工程[II])の前に、銅表面の自然酸化膜の除去を行うことも好ましい。この除去は酸化膜の除去剤を銅表面に接触させて行うことが好ましい。具体的な除去剤としては、クエン酸、塩酸、硫酸、アンモニア水、過硫酸アンモニウム、硝酸、フッ化水素酸などが挙げられる。中でも、引き続く工程[III]で適用する上記含窒素複素芳香族化合物との相性を考慮すると、クエン酸、塩酸、硫酸、フッ化水素酸などが好ましい。
以下の表1に示す各試験No.の成分および組成(質量%)とした金属防食剤(試験液)を調液した。残部は水(超純水)である。なお、本明細書においては、配合量や濃度は特に断らない限り質量基準である。
(1)上記銅膜を付した試験基板をクエン酸で5分処理し(室温:約25℃)、自然酸化膜を除去した。
(2)処理後の基板に対し枚葉式薬液処理機にて薬液(上記金属防食剤)を滴下した(25℃,回転数 500rpm、2L/min.,20秒)。
(3)上記処理の後、同じく枚葉式薬液処理装置にて純水によるリンス(25℃,回転数 500rpm、2L/min.,20秒)を行った。
(4)次いで、窒素雰囲気下で、枚葉式薬液処理装置にて高速回転(1000rpm)による乾燥を行った(室温:約25℃)。
(5)室温(約25℃)、湿度60%RH、大気中で5日間保管し静置した。
(6)その後、大気中150℃、3時間のアニール処理を行った。
(7)上記(1)〜(6)の処理を経た試験基板の銅めっき膜について、エリプソメトリーによる酸化銅の膜厚を測定した。この膜厚が小さいほど、銅表面の防食性が高いといえる。
なかでも、テトラゾールを用いた試験107、109、110、114、115においては、銅の変色が見られないという点で優れていた。
2 Ti層
3 Cu層
4 SnAg層
5 ノズル
10 半導体素子
S 金属防食剤
Claims (23)
- 電子デバイスに含まれる銅もしくは銅合金の表面に、アミノ基を有する5員の含窒素複素芳香族化合物を含有する金属防食剤を接触させる銅もしくは銅合金表面の酸化防止方法。
- 上記金属防食剤として、実質的に、アミノ基を有する5員の含窒素複素芳香族化合物のみを含有する請求項1に記載の酸化防止方法。
- 上記金属防食剤として、さらに有機アミン化合物を含有する請求項1または2に記載の酸化防止方法。
- 上記含窒素複素芳香族化合物が下記式(A1)〜(A4)のいずれかで表される請求項1〜3のいずれか1項に記載の酸化防止方法。
- 上記金属防食剤中の含窒素複素芳香族化合物の含有率が、0.01〜5質量%である請求項1〜4のいずれか1項に記載の酸化防止方法。
- 上記金属防食剤中の有機アミン化合物の含有率が、0.01〜5質量%である請求項3〜5のいずれか1項に記載の酸化防止方法。
- 上記有機アミン化合物を、上記含窒素複素芳香族化合物100質量部に対して、10質量部以上1000質量部以下で含有させる請求項3〜6のいずれか1項に記載の酸化防止方法。
- 上記有機アミン化合物のClogP値が0以上3以下である請求項3〜7のいずれか1項に記載の酸化防止方法。
- 上記金属防食剤は上記含窒素複素芳香族化合物を溶媒に含有させてなり、上記溶媒が水を主成分とする請求項1〜8のいずれか1項に記載の酸化防止方法。
- 上記含窒素複素芳香族化合物が、3,5−ジアミノ−1,2,4−トリアゾール、4−アミノ−1,2,4−トリアゾール、3−アミノ−1,2,4−トリアゾール、5−アミノテトラゾール、3−アミノ−1,2,4−トリアゾール−5−カルボン酸、3−アミノピラゾール、3−アミノ−1−メチルピラゾール、3−アミノ−5−メチルピラゾール、1,2,4−トリアゾール−3−カルボキサミド、または3−アミノ−5−メチルチオ−1,2,4−トリアゾールである請求項1〜9のいずれか1項に記載の酸化防止方法。
- 上記含窒素複素芳香族化合物が、5−アミノテトラゾールである請求項10に記載の酸化防止方法。
- 上記有機アミン化合物が炭素数1〜20のアルキルキルアミンまたは炭素数7〜15のアラルキルアミンである請求項3〜11のいずれか1項に記載の酸化防止方法。
- 上記銅もしくは銅合金がはんだを配設するための端子をなす請求項1〜12のいずれか1項に記載の酸化防止方法。
- 上記金属防食剤を、浸漬、流下、滴下、または噴霧により上記銅もしくは銅合金表面に接触させる請求項1〜13のいずれか1項に記載の酸化防止方法。
- 上記金属防食剤を、枚葉式薬液処理装置を用いて上記銅もしくは銅合金表面に接触させる請求項1〜14のいずれか1項に記載の酸化防止方法。
- 請求項1〜15のいずれか1項に記載の方法により上記電気デバイスの銅もしくは銅合金表面に酸化防止処理を施し、上記処理を介して製造する電子デバイスの製造方法。
- 上記酸化防止処理の後に、上記銅もしくは銅合金の表面にはんだ付けを行う請求項16に記載の電子デバイスの製造方法。
- 電子デバイスに含まれる銅もしくは銅合金の表面に、アミノ基を有する含窒素複素芳香族化合物を含む保護膜を形成した電子デバイス。
- アミノ基を有する5員の含窒素複素芳香族化合物を含有し、銅または銅合金の表面に酸化防止性を付与する金属防食剤。
- 上記含窒素複素芳香族化合物を水を主成分とする溶媒に含有させた水系組成物である請求項19に記載の金属防食剤。
- さらに有機アミン化合物を含有する請求項19または20に記載の金属防食剤。
- 上記有機アミン化合物を、上記含窒素複素芳香族化合物100質量部に対して、10質量部以上1000質量部以下で含有させる請求項21に記載の金属防食剤。
- 上記有機アミン化合物のClogP値が0以上3以下である請求項21または22に記載の金属防食剤。
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WO2020017283A1 (ja) * | 2018-07-20 | 2020-01-23 | 富士フイルム株式会社 | 処理液および処理方法 |
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