JP2014099489A - 半導体装置 - Google Patents
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- JP2014099489A JP2014099489A JP2012250139A JP2012250139A JP2014099489A JP 2014099489 A JP2014099489 A JP 2014099489A JP 2012250139 A JP2012250139 A JP 2012250139A JP 2012250139 A JP2012250139 A JP 2012250139A JP 2014099489 A JP2014099489 A JP 2014099489A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000010410 layer Substances 0.000 description 229
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 108091006146 Channels Proteins 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01—ELECTRIC ELEMENTS
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】SOI層2を主面側に備えたSOI基板5を備えており、このSOI基板5の主面側に複数の半導体素子50(LDMOS)が形成されている。また、この半導体素子50は、SOI層2上に形成されたN+層21(ソース層)と、SOI層2上であって、N+層21と離間する位置に設けられるN+層17(ドレイン層)と、主面側において、N+層21とN+層17の間の領域に隣接して配置される第1導電層34(制御層)とを備えている。そして、SOI層2において、各半導体素子50の間に当該半導体素子50として機能しない無効領域30が設けられている。
【選択図】図1
Description
少なくとも前記半導体基板(5)の前記主面側に構成される複数の半導体素子(50)と、を備え、前記半導体素子(50)は、前記半導体基板(5)の内部において前記第1半導体層(2)の上部且つ前記主面側に形成された第2半導体層(21)と、前記半導体基板(5)の内部において前記第1半導体層(2)の上部且つ前記主面側において、前記第2半導体層(21)から離れた位置に設けられた第3半導体層(17)と、前記半導体基板(5)における前記第2半導体層(21)と前記第3半導体層(17)との間の領域の上部に配置される制御層(34)と、を備え、前記半導体基板(5)において、少なくともいずれか複数の前記半導体素子(50)の間に、前記半導体素子(50)として機能しない無効領域(30)が設けられていることを特徴とする。
以下、本発明の第1実施形態について、詳細に説明する。
まず、シリコンからなる支持基板3上にシリコン酸化膜(SiO2)からなる埋込酸化膜4を介してシリコンからなるSOI(Silicon On Insulator)層2を積層して形成されるSOI基板5を用意し、トレンチ7を形成する(図10(A))。次に、リソグラフィなどによってマスクMを形成し、リンをドーズ量5.0×1013/cm2、100KeV、チルト角7°でイオン注入し(図10(B))、熱処理を行って活性化させNウェル層15を形成する(図10(B))。そして、表面を熱酸化させ、SiO2膜70を425Å程度形成し、この上にSiN膜72を1650Å堆積させる。このSiN膜72の上を、レジスト(マスクM)で覆い(図10(C))、SiO2膜70及びSiN膜72をエッチングする(図11(A))。
本発明は上記記述及び図面によって説明した実施形態に限定されるものではなく、例えば次のような実施形態も本発明の技術的範囲に含まれる。
2…SOI層(第1導電型の第1半導体層)
3…支持基板
4…埋込酸化膜
5…SOI基板(半導体基板)
17…N+層(第3半導体層、ドレイン層)
21…N+層(第2半導体層、ソース層、エミッタ層)
25…P+層(第3半導体層、コレクタ層)
30…無効領域
32…層間絶縁膜
34…第1導電層(ゲート電極、制御層、ポリシリコン膜)
35…第2導電層(ソース電極)
36…第3導電層(ドレイン電極)
40…酸化膜
50…半導体素子
Claims (2)
- 第1導電型の第1半導体層(2)を主面側に備えた半導体基板(5)と、
少なくとも前記半導体基板(5)の前記主面側に構成される複数の半導体素子(50)と、を備え、
前記半導体素子(50)は、
前記半導体基板(5)の内部において前記第1半導体層(2)の上部且つ前記主面側に形成された第2半導体層(21)と、
前記半導体基板(5)の内部において前記第1半導体層(2)の上部且つ前記主面側において、前記第2半導体層(21)から離れた位置に設けられた第3半導体層(17)と、
前記半導体基板(5)における前記第2半導体層(21)と前記第3半導体層(17)との間の領域の上部に配置される制御層(34)と、を備え、
前記半導体基板(5)において、少なくともいずれか複数の前記半導体素子(50)の間に、前記半導体素子(50)として機能しない無効領域(30)が設けられていることを特徴とする半導体装置。 - 前記第2半導体層(21)及び前記第3半導体層(17)はいずれも、前記半導体基板(5)の厚さ方向と直交する所定方向に長手状に形成され、前記第2半導体層(21)と前記第3半導体層(17)とからなる複数の列において、互いに隣り合う列の間に、前記半導体基板(5)における前記第2半導体層(21)及び前記第3半導体層(17)以外の一部領域が前記所定方向に長手状に配置されており、前記隣り合う列の間に介在するいずれかの前記一部領域が前記無効領域(30)として構成されていることを特徴とする請求項1に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012250139A JP5696715B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
DE102013214591.8A DE102013214591A1 (de) | 2012-11-14 | 2013-07-25 | Halbleitervorrichtung |
US13/951,644 US8907422B2 (en) | 2012-11-14 | 2013-07-26 | Semiconductor device |
CN201310397355.4A CN103811492B (zh) | 2012-11-14 | 2013-09-04 | 半导体器件 |
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JP2012250139A JP5696715B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
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JP2014099489A true JP2014099489A (ja) | 2014-05-29 |
JP5696715B2 JP5696715B2 (ja) | 2015-04-08 |
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JP2012250139A Expired - Fee Related JP5696715B2 (ja) | 2012-11-14 | 2012-11-14 | 半導体装置 |
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US (1) | US8907422B2 (ja) |
JP (1) | JP5696715B2 (ja) |
CN (1) | CN103811492B (ja) |
DE (1) | DE102013214591A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291574A (ja) * | 1992-04-10 | 1993-11-05 | Fujitsu Ltd | 半導体装置 |
JPH11345977A (ja) * | 1998-06-02 | 1999-12-14 | Denso Corp | 半導体装置 |
JP2006210865A (ja) * | 2004-12-27 | 2006-08-10 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2007201154A (ja) * | 2006-01-26 | 2007-08-09 | Renesas Technology Corp | 高出力半導体装置 |
JP2009130164A (ja) * | 2007-11-26 | 2009-06-11 | Denso Corp | 半導体装置 |
JP2010165974A (ja) * | 2009-01-19 | 2010-07-29 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
JP2010212726A (ja) * | 2000-04-07 | 2010-09-24 | Denso Corp | 半導体装置およびその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4479276B2 (ja) | 2004-02-25 | 2010-06-09 | 株式会社デンソー | 横型mosトランジスタの製造方法 |
JP4682533B2 (ja) | 2004-05-18 | 2011-05-11 | 株式会社デンソー | 半導体装置 |
JP4544313B2 (ja) * | 2008-02-19 | 2010-09-15 | トヨタ自動車株式会社 | Igbtとその製造方法 |
JP5658472B2 (ja) | 2010-03-26 | 2015-01-28 | ルネサスエレクトロニクス株式会社 | 電界効果トランジスタ |
-
2012
- 2012-11-14 JP JP2012250139A patent/JP5696715B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-25 DE DE102013214591.8A patent/DE102013214591A1/de not_active Ceased
- 2013-07-26 US US13/951,644 patent/US8907422B2/en not_active Expired - Fee Related
- 2013-09-04 CN CN201310397355.4A patent/CN103811492B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291574A (ja) * | 1992-04-10 | 1993-11-05 | Fujitsu Ltd | 半導体装置 |
JPH11345977A (ja) * | 1998-06-02 | 1999-12-14 | Denso Corp | 半導体装置 |
JP2010212726A (ja) * | 2000-04-07 | 2010-09-24 | Denso Corp | 半導体装置およびその製造方法 |
JP2006210865A (ja) * | 2004-12-27 | 2006-08-10 | Fuji Electric Device Technology Co Ltd | 半導体装置 |
JP2007201154A (ja) * | 2006-01-26 | 2007-08-09 | Renesas Technology Corp | 高出力半導体装置 |
JP2009130164A (ja) * | 2007-11-26 | 2009-06-11 | Denso Corp | 半導体装置 |
JP2010165974A (ja) * | 2009-01-19 | 2010-07-29 | Oki Semiconductor Co Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140131798A1 (en) | 2014-05-15 |
CN103811492B (zh) | 2017-11-03 |
DE102013214591A1 (de) | 2014-05-15 |
CN103811492A (zh) | 2014-05-21 |
US8907422B2 (en) | 2014-12-09 |
JP5696715B2 (ja) | 2015-04-08 |
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