JP2014090169A - 窒化インジウムガリウム発光デバイス - Google Patents
窒化インジウムガリウム発光デバイス Download PDFInfo
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- 229910052738 indium Inorganic materials 0.000 title claims description 37
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title abstract description 12
- 229910002601 GaN Inorganic materials 0.000 title description 34
- 239000000758 substrate Substances 0.000 claims description 68
- 239000000203 mixture Substances 0.000 claims description 28
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 21
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000008247 solid mixture Substances 0.000 description 8
- 229910021617 Indium monochloride Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- XDIAMRVROCPPBK-UHFFFAOYSA-N 2,2-dimethylpropan-1-amine Chemical compound CC(C)(C)CN XDIAMRVROCPPBK-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ARNGHGJNNBENLZ-UHFFFAOYSA-N CC(C[In])(C)C Chemical class CC(C[In])(C)C ARNGHGJNNBENLZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012932 thermodynamic analysis Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- -1 tri - methyl (- ethyl) gallium Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000013598 vector Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】グレーディング構造を用いて成長させた新規な構造1000は、GaN基板1004上にHVPEリアクタを用いて成長させる。InGaNの成長速度が極めて高速であり、1μm厚さの多工程層を容易に成長させることができる。
【選択図】図10
Description
本出願は、米国仮出願第61/714,693号(出願日:2012年10月16日)の35U.S.C.§119(e)の下における恩恵を主張する。
本開示は、InGaNテンプレート層上に作製されたInGaN系の発光デバイスに関連する。
in InGaN grown by
Metalorganic chemical vapor deposition」(Appl. Phys. Lett.,
vol. 72, pp. 40-42, 1998)。相分離は、特定の層厚さにおいて特定のInNモル分率の臨界値を超えた場合において発生する。このような制限は、約10%InNのInGaN層の成長が厚さ0.2μmを超えた場合にみられることが多く、その結果例えば、「黒色」または「灰色」のウェーハが発生する。
Express 2, 082101, 2009、J. W. Raring et
al.「High-efficiency
blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates」(Appl. Phys.
Express 3, 112101 (2010))。しかし、これらの構造上において成長されたより長い波長のデバイスの性能は、より短波長のものに比べて大幅に低くなる。また、歪みと関連する材料品質問題を成長面配向によって解消できるのかは不明である。実際、最近行われた半極性(Al、In、Ga)Nヘテロ構造の特徴付けによれば、例えば、AlGaNおよびGaN間のヘテロ界面において高密度のミスフィット転位が形成さることが分かっている(以下を参照:A. Tyagi et al., 「Partial strain
relaxation via misfit dislocation generation at heterointerfaces
in (Al, In)GaN epitaxial
layers grown on semipolar (11-22) GaN
free standing substrates」(Appl. Phys. Lett. 95, 251905, 2009))。これらの転位は、非放射再結合中心として機能する可能性が高く、これらの転位から劣化機構が発生し得、その結果、(例えば、固体照明などの用途に必要な)長寿命動作が失われる。さらに、外部量子効率対LED波長についての報告によれば、InNモル分率の増加と共に外部量子効率の大幅な低下が主にみられている。このような現象は、成長面配向に関係無く「緑色ギャップ」と呼ばれることが多い。
InGaN ternary alloy」、Journal Crystal Growth、vol. 318 (2011) 441-445)。ソースゾーンにおいて、ガリウム金属およびインジウム金属の2つのボートを配置し、Cl2およびIG(窒素、ヘリウムおよびアルゴンのような不活性ガス)の混合ガスまたはCl2、IGおよび水素の混合ガスをソースボート中へと送る。グループIII前駆体であるGaCl3およびInCl3を反応(1)および(2)(以下)によって生成し、堆積ゾーン中へと移送する。上記反応の代わりに、固体GaCl3およびInCl3ソースから気化された蒸気圧力をグループIII前駆体として用いることができる。よって、以下のような関連反応が得られる。
Ga(単数または複数)+1.5Cl2→GaCl3 (1)
In(単数または複数)+1.5Cl2→InCl3 (2)
GaCl3+NH3→GaN(アロイ)+3HCl (3)
InCl3+NH3→InN(アロイ)+3HCl (4)
(1997) pp. L601-L603)。これらのサンプルの固体組成は、上記サンプルのものと類似している。しかし、上記サンプルのフォトルミネセンスは、固体ソース中の高不純物濃度に起因して観察されなかった。図中、PIIIおよびPvは、グループIIIソース(PIn+PGa)およびグループVソース(PNH3)の入力部の分圧を示す。
Claims (14)
- ガリウムおよびインジウムを含有する窒化物基板と、
前記基板上に設けられるn型層と、
前記n型層上に設けられる活性層と、
前記活性層上に設けられるp型層と、
を備え、
前記ガリウムおよびインジウムを含有する窒化物基板は、4μmを超える厚さを含み、0.5%を超えるInN組成を有する、
発光デバイス。 - 前記基板は、ウルツ鉱結晶構造であって、大面積の表面の結晶配向は、(0001)+c面および(000−1)−c面のうちの1つの約5度以内であることによって特徴付けられる、請求項1記載の発光デバイス。
- 前記基板は、実質的にクラックを含まない、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.1%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.01%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- 前記ガリウムおよびインジウムを含有する窒化物基板は、特定のインジウム含有窒化物組成について平衡格子定数の0.001%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項1記載の発光デバイス。
- ランプ、照明器具および照明システムのうち少なくとも1つをさらに含み、前記発光デバイスは、前記ランプ、前記照明器具または前記照明システムに組み込まれている、請求項1記載の発光デバイス。
- 基板と、
前記基板上に設けられるn型層と、
前記n型層上に設けられる活性層と、
前記活性層上に設けられるp型層と、
を備え、
前記n型層、前記活性層および前記p型層はそれぞれ面内格子定数によって特徴付けられ、前記面内格子定数のそれぞれは、同様に配向されたGaNの面内格子定数よりも少なくとも1%だけ大きい発光デバイス。 - 前記基板は、ウルツ鉱結晶構造であって、大面積の表面の結晶配向は、(0001)+c面および(000−1)−c面のうちの1つの約5度以内であることによって特徴付けられる、請求項8記載の発光デバイス。
- 前記基板は実質的にクラックを含まない、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.1%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.01%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和されている、請求項8記載の発光デバイス。
- 前記基板はガリウムおよびインジウムを含有する窒化物を含み、特定のインジウム含有窒化物組成について各平衡格子定数の0.001%以内のa軸格子定数およびc軸格子定数を有することで歪みが緩和れている、請求項8記載の発光デバイス。
- ランプ、照明器具および照明システムのうち少なくとも1つをさらに含み、前記発光デバイスは、前記ランプ、前記照明器具または前記照明システム内に組み込まれている、請求項8記載の発光デバイス。
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US201261714693P | 2012-10-16 | 2012-10-16 | |
US61/714,693 | 2012-10-16 |
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JP2014090169A5 JP2014090169A5 (ja) | 2016-12-28 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016094309A (ja) * | 2014-11-13 | 2016-05-26 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
JP2018531514A (ja) * | 2015-10-08 | 2018-10-25 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色〜赤色の発光(>600nm)を有するIII族窒化物半導体発光デバイス及びこれを作製するための方法 |
JP2019112302A (ja) * | 2019-04-03 | 2019-07-11 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
US10693040B2 (en) | 2017-08-18 | 2020-06-23 | Samsung Electronics Co., Ltd. | Light emitting device and light emitting device package |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US20110182056A1 (en) * | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
US9595958B1 (en) * | 2015-09-11 | 2017-03-14 | Fuji Electric Co., Ltd. | Semiconductor device and driving method for the same |
KR102330907B1 (ko) * | 2017-07-20 | 2021-11-25 | 스웨간 에이비 | 고 전자 이동도 트랜지스터를 위한 이종구조체 및 이를 제조하는 방법 |
CN114717535B (zh) * | 2022-03-21 | 2023-07-14 | 太原理工大学 | 一种在硅衬底上制备纤锌矿InGaN纳米棒的方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003037288A (ja) * | 2001-07-26 | 2003-02-07 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体結晶膜の成長方法 |
JP2009147271A (ja) * | 2007-12-18 | 2009-07-02 | Tohoku Univ | 基板製造方法およびiii族窒化物半導体結晶 |
JP2010509177A (ja) * | 2006-11-15 | 2010-03-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機金属化学気相成長法による、高品質のN面GaN、InNおよびAlNならびにそれらの合金のヘテロエピタキシャル成長の方法 |
US20110033966A1 (en) * | 2009-08-10 | 2011-02-10 | Applied Materials, Inc. | Growth of n-face led with integrated processing system |
WO2011022724A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface |
WO2011022730A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations |
JP2011044669A (ja) * | 2009-08-24 | 2011-03-03 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体光素子、及びiii族窒化物半導体光素子を作製する方法 |
US20120091465A1 (en) * | 2010-10-13 | 2012-04-19 | Soraa, Inc. | Method of Making Bulk InGaN Substrates and Devices Thereon |
US20120199952A1 (en) * | 2012-01-09 | 2012-08-09 | Soraa, Inc. | Method for Growth of Indium-Containing Nitride Films |
Family Cites Families (413)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3283143A (en) | 1963-11-12 | 1966-11-01 | Marshall L Gosnell | Fog lens |
US3621233A (en) | 1968-11-08 | 1971-11-16 | Harry Ferdinand Jr | Removably attached vehicular headlamp glare-diffusing filter |
US3647522A (en) | 1970-04-29 | 1972-03-07 | Motorola Inc | Method of reclaiming and coating phosphor |
US3922527A (en) | 1974-12-26 | 1975-11-25 | Nat Forge Co | Temperature control apparatus |
US4065688A (en) | 1977-03-28 | 1977-12-27 | Westinghouse Electric Corporation | High-pressure mercury-vapor discharge lamp having a light output with incandescent characteristics |
US4225904A (en) | 1978-05-18 | 1980-09-30 | Bill Linder | Fog filter for headlights |
US4350560A (en) | 1981-08-07 | 1982-09-21 | Ferrofluidics Corporation | Apparatus for and method of handling crystals from crystal-growing furnaces |
CA1210132A (en) | 1982-09-16 | 1986-08-19 | Tadao Kubodera | Television receiver |
DE3624934A1 (de) | 1986-07-23 | 1988-01-28 | Dynamit Nobel Ag | Bei hohen temperaturen bestaendige katalysator-formkoerper und verfahren zu deren herstellung |
US5142387A (en) | 1990-04-11 | 1992-08-25 | Mitsubishi Denki Kabushiki Kaisha | Projection-type display device having light source means including a first and second concave mirrors |
US5005109A (en) | 1990-07-30 | 1991-04-02 | Carleton Roland A | Detachable amber lens for a vehicle |
US5679977A (en) | 1990-09-24 | 1997-10-21 | Tessera, Inc. | Semiconductor chip assemblies, methods of making same and components for same |
US5169486A (en) | 1991-03-06 | 1992-12-08 | Bestal Corporation | Crystal growth apparatus and process |
US5157466A (en) | 1991-03-19 | 1992-10-20 | Conductus, Inc. | Grain boundary junctions in high temperature superconductor films |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
US5331654A (en) | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
JPH06267846A (ja) | 1993-03-10 | 1994-09-22 | Canon Inc | ダイヤモンド電子装置およびその製造法 |
JPH06334215A (ja) | 1993-05-18 | 1994-12-02 | Daido Steel Co Ltd | 面発光型発光ダイオード |
JP3623001B2 (ja) | 1994-02-25 | 2005-02-23 | 住友電気工業株式会社 | 単結晶性薄膜の形成方法 |
JP3538275B2 (ja) | 1995-02-23 | 2004-06-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JPH0982587A (ja) | 1995-09-08 | 1997-03-28 | Hewlett Packard Co <Hp> | 非方形電子チップの製造方法 |
JPH09199756A (ja) | 1996-01-22 | 1997-07-31 | Toshiba Corp | 反射型光結合装置 |
US6072197A (en) | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
IL117403A (en) | 1996-03-07 | 2000-06-29 | Rogozinksi Joseph | Systems for the prevention of traffic blinding |
US5764674A (en) | 1996-06-28 | 1998-06-09 | Honeywell Inc. | Current confinement for a vertical cavity surface emitting laser |
US6104450A (en) | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
US6533874B1 (en) | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6180029B1 (en) | 1997-02-24 | 2001-01-30 | Superior Micropowders Llc | Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
EP0871228A3 (en) | 1997-04-09 | 2001-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate, semiconductor device and method of manufacturing the same |
US5926493A (en) | 1997-05-20 | 1999-07-20 | Sdl, Inc. | Optical semiconductor device with diffraction grating structure |
US5813753A (en) | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
JPH10335750A (ja) | 1997-06-03 | 1998-12-18 | Sony Corp | 半導体基板および半導体装置 |
US6340824B1 (en) | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
KR100629558B1 (ko) | 1997-10-30 | 2006-09-27 | 스미토모덴키고교가부시키가이샤 | GaN단결정기판 및 그 제조방법 |
US6633120B2 (en) | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
EP2273572B1 (en) | 1998-03-12 | 2015-04-29 | Nichia Corporation | A nitride semiconductor device |
US6147953A (en) | 1998-03-25 | 2000-11-14 | Duncan Technologies, Inc. | Optical signal transmission apparatus |
US6195381B1 (en) | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
JPH11340507A (ja) | 1998-05-26 | 1999-12-10 | Matsushita Electron Corp | 半導体発光素子およびその製造方法 |
JPH11340576A (ja) | 1998-05-28 | 1999-12-10 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体デバイス |
TW413956B (en) | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
WO2000011106A1 (fr) | 1998-08-18 | 2000-03-02 | Nichia Corporation | Luminophore a photoluminescence residuelle emettant une lumiere rouge et lampe a luminescence residuelle comprenant ce luminophore |
KR100304881B1 (ko) | 1998-10-15 | 2001-10-12 | 구자홍 | Gan계화합물반도체및그의결정성장방법 |
US6413839B1 (en) | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
JP3496712B2 (ja) | 1999-04-05 | 2004-02-16 | 日本電気株式会社 | 窒化物系化合物半導体レーザ素子とその製造方法 |
WO2001018872A1 (fr) | 1999-09-07 | 2001-03-15 | Sixon Inc. | TRANCHE DE SiC, DISPOSITIF A SEMI-CONDUCTEUR DE SiC, ET PROCEDE DE PRODUCTION D'UNE TRANCHE DE SiC |
JP2001160627A (ja) | 1999-11-30 | 2001-06-12 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6452220B1 (en) | 1999-12-09 | 2002-09-17 | The Regents Of The University Of California | Current isolating epitaxial buffer layers for high voltage photodiode array |
JP2001177146A (ja) | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | 三角形状の半導体素子及びその製法 |
US6903376B2 (en) | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
WO2001064591A1 (en) | 2000-03-01 | 2001-09-07 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
TW518767B (en) | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
CN1251372C (zh) | 2000-06-08 | 2006-04-12 | 日亚化学工业株式会社 | 半导体激光元件及其制造方法 |
JP2001356701A (ja) | 2000-06-15 | 2001-12-26 | Fuji Photo Film Co Ltd | 光学素子、光源ユニットおよび表示装置 |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
US6680959B2 (en) | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
JP3906653B2 (ja) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
US6534797B1 (en) | 2000-11-03 | 2003-03-18 | Cree, Inc. | Group III nitride light emitting devices with gallium-free layers |
US7015516B2 (en) | 2000-11-16 | 2006-03-21 | Gelcore Llc | Led packages having improved light extraction |
JP2002185085A (ja) | 2000-12-12 | 2002-06-28 | Sharp Corp | 窒化物系半導体レーザ素子及びチップ分割方法 |
JP4595198B2 (ja) | 2000-12-15 | 2010-12-08 | ソニー株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
WO2002078096A1 (en) | 2001-03-23 | 2002-10-03 | Oriol, Inc. | TREATING N-TYPE GaN WITH A C12-BASED INDUCTIVELY COUPLED PLASMA BEFORE FORMATION OF OHMIC CONTACTS |
US7095051B2 (en) | 2001-03-28 | 2006-08-22 | Nichia Corporation | Nitride semiconductor element |
US6547249B2 (en) | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6939730B2 (en) | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
US6734530B2 (en) | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
JP3639807B2 (ja) | 2001-06-27 | 2005-04-20 | キヤノン株式会社 | 光学素子及び製造方法 |
JP2003031844A (ja) | 2001-07-11 | 2003-01-31 | Sony Corp | 半導体発光素子の製造方法 |
EP1423839A4 (en) | 2001-07-23 | 2007-03-07 | Genoa Color Technologies Ltd | SYSTEM AND METHOD FOR DISPLAYING AN IMAGE |
JP4055503B2 (ja) | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
US6379985B1 (en) | 2001-08-01 | 2002-04-30 | Xerox Corporation | Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates |
JP3969029B2 (ja) | 2001-08-03 | 2007-08-29 | ソニー株式会社 | 半導体素子の製造方法 |
CN101335322B (zh) | 2001-09-03 | 2010-12-08 | 松下电器产业株式会社 | 荧光体层、半导体发光装置及半导体发光元件的制造方法 |
US6616734B2 (en) | 2001-09-10 | 2003-09-09 | Nanotek Instruments, Inc. | Dynamic filtration method and apparatus for separating nano powders |
US7303630B2 (en) | 2003-11-05 | 2007-12-04 | Sumitomo Electric Industries, Ltd. | Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
JP3801125B2 (ja) * | 2001-10-09 | 2006-07-26 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法 |
US7556687B2 (en) | 2001-09-19 | 2009-07-07 | Sumitomo Electric Industries, Ltd. | Gallium nitride crystal substrate and method of producing same |
JP3864870B2 (ja) | 2001-09-19 | 2007-01-10 | 住友電気工業株式会社 | 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法 |
US6498355B1 (en) | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
JP4290358B2 (ja) * | 2001-10-12 | 2009-07-01 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
JP4097601B2 (ja) | 2001-10-26 | 2008-06-11 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 窒化物半導体レーザ素子、及びその製造方法 |
DE10161882A1 (de) | 2001-12-17 | 2003-10-02 | Siemens Ag | Wärmeleitfähige thermoplastische Compounds und Verwendung dazu |
US6891227B2 (en) | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
AUPS240402A0 (en) | 2002-05-17 | 2002-06-13 | Macquarie Research Limited | Gallium nitride |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
US6860628B2 (en) * | 2002-07-17 | 2005-03-01 | Jonas J. Robertson | LED replacement for fluorescent lighting |
US6995032B2 (en) | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
KR20110118848A (ko) | 2002-09-19 | 2011-11-01 | 크리 인코포레이티드 | 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드, 및 그의 제조방법 |
US6809781B2 (en) | 2002-09-24 | 2004-10-26 | General Electric Company | Phosphor blends and backlight sources for liquid crystal displays |
US7009199B2 (en) | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
JP5138145B2 (ja) | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | 蛍光体積層構造及びそれを用いる光源 |
US7186302B2 (en) | 2002-12-16 | 2007-03-06 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
AU2003259125A1 (en) | 2002-12-16 | 2004-07-29 | The Regents Of The University Of California | Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy |
US8089097B2 (en) | 2002-12-27 | 2012-01-03 | Momentive Performance Materials Inc. | Homoepitaxial gallium-nitride-based electronic devices and method for producing same |
TWI230978B (en) | 2003-01-17 | 2005-04-11 | Sanken Electric Co Ltd | Semiconductor device and the manufacturing method thereof |
US7118438B2 (en) | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
JP3778186B2 (ja) | 2003-02-18 | 2006-05-24 | 株式会社豊田自動織機 | 導光板 |
US6864641B2 (en) | 2003-02-20 | 2005-03-08 | Visteon Global Technologies, Inc. | Method and apparatus for controlling light emitting diodes |
JP2004273798A (ja) | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | 発光デバイス |
KR100693969B1 (ko) | 2003-03-10 | 2007-03-12 | 도요다 고세이 가부시키가이샤 | 고체 소자 디바이스 및 그 제조 방법 |
JP2004304111A (ja) | 2003-04-01 | 2004-10-28 | Sharp Corp | 多波長レーザ装置 |
EP1616981A4 (en) | 2003-04-03 | 2009-06-03 | Tokyo Denpa Kk | MONOCRYSTAL ZINC OXIDE |
EP2270887B1 (en) | 2003-04-30 | 2020-01-22 | Cree, Inc. | High powered light emitter packages with compact optics |
US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US6989807B2 (en) | 2003-05-19 | 2006-01-24 | Add Microtech Corp. | LED driving device |
DE20308495U1 (de) | 2003-05-28 | 2004-09-30 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Konversions-LED |
JP3098262U (ja) | 2003-06-02 | 2004-02-26 | 有限会社トダ精光 | アクセサリーレンズ |
WO2004109764A2 (en) | 2003-06-04 | 2004-12-16 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
WO2005004247A1 (en) | 2003-07-03 | 2005-01-13 | Epivalley Co., Ltd. | Iii-nitride compound semiconductor light emitting device |
EP1658642B1 (en) | 2003-08-28 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
JP2005085942A (ja) | 2003-09-08 | 2005-03-31 | Seiko Epson Corp | 光モジュール、光伝送装置 |
US7341880B2 (en) | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
US6942360B2 (en) | 2003-10-01 | 2005-09-13 | Enertron, Inc. | Methods and apparatus for an LED light engine |
US7348600B2 (en) | 2003-10-20 | 2008-03-25 | Nichia Corporation | Nitride semiconductor device, and its fabrication process |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7009215B2 (en) | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7128849B2 (en) | 2003-10-31 | 2006-10-31 | General Electric Company | Phosphors containing boron and metals of Group IIIA and IIIB |
US7329887B2 (en) | 2003-12-02 | 2008-02-12 | 3M Innovative Properties Company | Solid state light device |
JP5719493B2 (ja) | 2003-12-09 | 2015-05-20 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード |
US7318651B2 (en) | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US20060038542A1 (en) | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US7384481B2 (en) | 2003-12-29 | 2008-06-10 | Translucent Photonics, Inc. | Method of forming a rare-earth dielectric layer |
EP1733077B1 (en) | 2004-01-15 | 2018-04-18 | Samsung Electronics Co., Ltd. | Nanocrystal doped matrixes |
TWI229463B (en) | 2004-02-02 | 2005-03-11 | South Epitaxy Corp | Light-emitting diode structure with electro-static discharge protection |
US7165896B2 (en) | 2004-02-12 | 2007-01-23 | Hymite A/S | Light transmitting modules with optical power monitoring |
US7675231B2 (en) | 2004-02-13 | 2010-03-09 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting diode display device comprising a high temperature resistant overlay |
AU2005219978B2 (en) | 2004-03-03 | 2010-08-26 | S.C. Johnson & Son, Inc. | LED light bulb with active ingredient emission |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
JP4805831B2 (ja) | 2004-03-18 | 2011-11-02 | パナソニック株式会社 | 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 |
US7083302B2 (en) | 2004-03-24 | 2006-08-01 | J. S. Technology Co., Ltd. | White light LED assembly |
KR100568297B1 (ko) | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
JP4671617B2 (ja) * | 2004-03-30 | 2011-04-20 | 三洋電機株式会社 | 集積型半導体レーザ素子 |
US7285801B2 (en) | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
US7061026B2 (en) | 2004-04-16 | 2006-06-13 | Arima Optoelectronics Corp. | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer |
EP1598681A3 (de) | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Optische Komponente mit gekrümmter Oberfläche und Mehrlagenbeschichtung |
US7791061B2 (en) | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
US9130119B2 (en) | 2006-12-11 | 2015-09-08 | The Regents Of The University Of California | Non-polar and semi-polar light emitting devices |
US7019325B2 (en) | 2004-06-16 | 2006-03-28 | Exalos Ag | Broadband light emitting device |
KR101193740B1 (ko) | 2004-06-30 | 2012-10-22 | 크리 인코포레이티드 | 발광 소자의 패키징을 위한 칩-규모 방법 및 칩 규모로 패키징된 발광 소자 |
JP4841550B2 (ja) | 2004-06-30 | 2011-12-21 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法並びにこれを用いた発光装置 |
US7252408B2 (en) | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
EP1790759A4 (en) | 2004-08-06 | 2009-10-28 | Mitsubishi Chem Corp | NITRIDE MONOCRYSTAL SEMICONDUCTOR COMPRISING Ga, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL |
JP2006086516A (ja) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
JP2006073076A (ja) | 2004-09-01 | 2006-03-16 | Fujinon Corp | 光記録媒体用対物光学系およびこれを用いた光ピックアップ装置 |
US7737459B2 (en) | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
DE102005045589A1 (de) | 2004-09-24 | 2006-04-06 | Epistar Corp. | Flüssigkristalldisplay |
EP2573206B1 (en) | 2004-09-27 | 2014-06-11 | Gallium Enterprises Pty Ltd | Method for growing a group (iii) metal nitride film |
JP2006108435A (ja) | 2004-10-06 | 2006-04-20 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハ |
KR100661708B1 (ko) | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US20060097385A1 (en) | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7858408B2 (en) | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
JP4581646B2 (ja) | 2004-11-22 | 2010-11-17 | パナソニック電工株式会社 | 発光ダイオード点灯装置 |
US7326963B2 (en) | 2004-12-06 | 2008-02-05 | Sensor Electronic Technology, Inc. | Nitride-based light emitting heterostructure |
US7751455B2 (en) | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
KR100661709B1 (ko) | 2004-12-23 | 2006-12-26 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US7199918B2 (en) | 2005-01-07 | 2007-04-03 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US7897420B2 (en) | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US8318519B2 (en) | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
EP1681712A1 (en) | 2005-01-13 | 2006-07-19 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Method of producing substrates for optoelectronic applications |
US7221044B2 (en) | 2005-01-21 | 2007-05-22 | Ac Led Lighting, L.L.C. | Heterogeneous integrated high voltage DC/AC light emitter |
US7704324B2 (en) | 2005-01-25 | 2010-04-27 | General Electric Company | Apparatus for processing materials in supercritical fluids and methods thereof |
US7358542B2 (en) | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
US7535028B2 (en) | 2005-02-03 | 2009-05-19 | Ac Led Lighting, L.Lc. | Micro-LED based high voltage AC/DC indicator lamp |
US7081722B1 (en) | 2005-02-04 | 2006-07-25 | Kimlong Huynh | Light emitting diode multiphase driver circuit and method |
GB2423144B (en) | 2005-02-10 | 2009-08-05 | Richard Liddle | Lighting system |
US7868349B2 (en) | 2005-02-17 | 2011-01-11 | Lg Electronics Inc. | Light source apparatus and fabrication method thereof |
US7932111B2 (en) | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
EP1758171A4 (en) | 2005-03-04 | 2009-04-29 | Sumitomo Electric Industries | VERTICAL GALLIUM NITRIDE SEMICONDUCTOR ELEMENT AND EPITACTIC SUBSTRATE |
US20060204865A1 (en) | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
JP4104013B2 (ja) | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
JP5010108B2 (ja) | 2005-03-25 | 2012-08-29 | 株式会社沖データ | 半導体複合装置、プリントヘッド、及びそれを用いた画像形成装置 |
US7483466B2 (en) | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
US7574791B2 (en) | 2005-05-10 | 2009-08-18 | Hitachi Global Storage Technologies Netherlands B.V. | Method to fabricate side shields for a magnetic sensor |
JP4636501B2 (ja) | 2005-05-12 | 2011-02-23 | 株式会社沖データ | 半導体装置、プリントヘッド及び画像形成装置 |
US7358543B2 (en) | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
TWI455181B (zh) | 2005-06-01 | 2014-10-01 | Univ California | 半極性(Ga,Al,In,B)N薄膜、異質結構及裝置之生長及製造技術 |
KR20060127743A (ko) | 2005-06-06 | 2006-12-13 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판과 그 제조 방법 |
US20060288928A1 (en) | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
US7279040B1 (en) | 2005-06-16 | 2007-10-09 | Fairfield Crystal Technology, Llc | Method and apparatus for zinc oxide single crystal boule growth |
US8148713B2 (en) | 2008-04-04 | 2012-04-03 | The Regents Of The University Of California | Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes |
KR101310332B1 (ko) | 2005-06-21 | 2013-09-23 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 발광 다이오드 장치 및 그 제조방법 |
US20100220262A1 (en) | 2008-08-05 | 2010-09-02 | The Regents Of The University Of California | Linearly polarized backlight source in conjunction with polarized phosphor emission screens for use in liquid crystal displays |
US7887631B2 (en) | 2005-06-24 | 2011-02-15 | The Gemesis Corporation | System and high pressure, high temperature apparatus for producing synthetic diamonds |
US7799236B2 (en) | 2005-08-30 | 2010-09-21 | Lg Chem, Ltd. | Gathering method and apparatus of powder separated soluble component |
JP4656410B2 (ja) | 2005-09-05 | 2011-03-23 | 住友電気工業株式会社 | 窒化物半導体デバイスの製造方法 |
WO2008027027A2 (en) | 2005-09-07 | 2008-03-06 | Cree, Inc | Transistor with fluorine treatment |
JP2007110090A (ja) | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
JP2007081180A (ja) | 2005-09-15 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 半導体発光素子 |
JP2007087973A (ja) | 2005-09-16 | 2007-04-05 | Rohm Co Ltd | 窒化物半導体素子の製法およびその方法により得られる窒化物半導体発光素子 |
US8661660B2 (en) | 2005-09-22 | 2014-03-04 | The Artak Ter-Hovhanissian Patent Trust | Process for manufacturing LED lighting with integrated heat sink |
US8334155B2 (en) * | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
US20080099777A1 (en) | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
US20070096239A1 (en) | 2005-10-31 | 2007-05-03 | General Electric Company | Semiconductor devices and methods of manufacture |
EP1788619A3 (en) | 2005-11-18 | 2009-09-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4696886B2 (ja) | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法 |
JP5191650B2 (ja) | 2005-12-16 | 2013-05-08 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
US7148515B1 (en) | 2006-01-07 | 2006-12-12 | Tyntek Corp. | Light emitting device having integrated rectifier circuit in substrate |
JP5108532B2 (ja) | 2006-01-18 | 2012-12-26 | パナソニック株式会社 | 窒化物半導体発光装置 |
US7528422B2 (en) | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR100896576B1 (ko) | 2006-02-24 | 2009-05-07 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
JP4660400B2 (ja) | 2006-03-14 | 2011-03-30 | シャープ株式会社 | 窒化物半導体レーザ素子の製造方法 |
WO2007109153A2 (en) | 2006-03-16 | 2007-09-27 | Radpax, Inc. | Rapid film bonding using pattern printed adhesive |
KR100765075B1 (ko) | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광 소자 및 그 제조방법 |
US7727333B1 (en) * | 2006-03-27 | 2010-06-01 | Technologies And Devices International, Inc. | HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
JP2007273492A (ja) | 2006-03-30 | 2007-10-18 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
US20070247852A1 (en) | 2006-04-21 | 2007-10-25 | Xiaoping Wang | Multi chip LED lamp |
KR100735496B1 (ko) | 2006-05-10 | 2007-07-04 | 삼성전기주식회사 | 수직구조 질화갈륨계 led 소자의 제조방법 |
US7480322B2 (en) | 2006-05-15 | 2009-01-20 | The Regents Of The University Of California | Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser |
JP4819577B2 (ja) | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | パターン転写方法およびパターン転写装置 |
JP4854566B2 (ja) | 2006-06-15 | 2012-01-18 | シャープ株式会社 | 窒化物半導体発光素子の製造方法および窒化物半導体発光素子 |
EP2041802B1 (en) | 2006-06-23 | 2013-11-13 | LG Electronics Inc. | Light emitting diode having vertical topology and method of making the same |
US20090273005A1 (en) | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
JP4957110B2 (ja) | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | 発光装置 |
KR20090048640A (ko) | 2006-08-23 | 2009-05-14 | 크리 엘이디 라이팅 솔루션즈, 인크. | 조명 장치 및 조명 방법 |
TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
US8362603B2 (en) | 2006-09-14 | 2013-01-29 | Luminus Devices, Inc. | Flexible circuit light-emitting structures |
JP2008084973A (ja) | 2006-09-26 | 2008-04-10 | Stanley Electric Co Ltd | 半導体発光デバイス |
JP4246242B2 (ja) | 2006-09-27 | 2009-04-02 | 三菱電機株式会社 | 半導体発光素子 |
JP2008109066A (ja) | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
US7714348B2 (en) | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
US7642122B2 (en) | 2006-10-08 | 2010-01-05 | Momentive Performance Materials Inc. | Method for forming nitride crystals |
JP2008135697A (ja) | 2006-10-23 | 2008-06-12 | Rohm Co Ltd | 半導体発光素子 |
TWI371870B (en) | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
JP5105160B2 (ja) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
TWI349902B (en) | 2006-11-16 | 2011-10-01 | Chunghwa Picture Tubes Ltd | Controlling apparatuses for controlling a plurality of led strings and related light modules |
US7598104B2 (en) | 2006-11-24 | 2009-10-06 | Agency For Science, Technology And Research | Method of forming a metal contact and passivation of a semiconductor feature |
US7700962B2 (en) | 2006-11-28 | 2010-04-20 | Luxtaltek Corporation | Inverted-pyramidal photonic crystal light emitting device |
JP2010512661A (ja) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高特性無極性iii族窒化物光デバイスの有機金属化学気相成長法(mocvd)による成長 |
US20080217745A1 (en) | 2006-12-19 | 2008-09-11 | Sumitomo Electric Industries, Ltd. | Nitride Semiconductor Wafer |
US8742251B2 (en) | 2006-12-20 | 2014-06-03 | Jds Uniphase Corporation | Multi-segment photovoltaic power converter with a center portion |
JP2010514581A (ja) | 2006-12-28 | 2010-05-06 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | サファイア基板及びその製造方法 |
JP2008172040A (ja) | 2007-01-12 | 2008-07-24 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、バックライト、ディスプレイおよび電子機器 |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
WO2008091846A2 (en) | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
TW200834962A (en) | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
JP2008198650A (ja) | 2007-02-08 | 2008-08-28 | Toshiba Discrete Technology Kk | 半導体発光素子及び半導体発光装置 |
EP2111632A1 (en) | 2007-02-12 | 2009-10-28 | The Regents of the University of California | Cleaved facet (ga,al,in)n edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates |
US8211723B2 (en) | 2007-02-12 | 2012-07-03 | The Regents Of The University Of California | Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes |
US7652305B2 (en) | 2007-02-23 | 2010-01-26 | Corning Incorporated | Methods and apparatus to improve frit-sealed glass package |
KR101239853B1 (ko) | 2007-03-13 | 2013-03-06 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
KR100974923B1 (ko) | 2007-03-19 | 2010-08-10 | 서울옵토디바이스주식회사 | 발광 다이오드 |
JP5032171B2 (ja) | 2007-03-26 | 2012-09-26 | 株式会社東芝 | 半導体発光素子およびその製造方法ならびに発光装置 |
TWI392111B (zh) | 2007-04-11 | 2013-04-01 | Everlight Electronics Co Ltd | 發光二極體裝置的螢光粉塗佈製程 |
US8088670B2 (en) | 2007-04-18 | 2012-01-03 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing bonded substrate with sandblast treatment |
CN100580905C (zh) | 2007-04-20 | 2010-01-13 | 晶能光电(江西)有限公司 | 获得在分割衬底上制造的半导体器件的高质量边界的方法 |
US7843980B2 (en) | 2007-05-16 | 2010-11-30 | Rohm Co., Ltd. | Semiconductor laser diode |
JP2008285364A (ja) | 2007-05-17 | 2008-11-27 | Sumitomo Electric Ind Ltd | GaN基板、それを用いたエピタキシャル基板及び半導体発光素子 |
KR100867551B1 (ko) | 2007-05-18 | 2008-11-10 | 삼성전기주식회사 | Led 어레이 구동 장치 |
JP4614988B2 (ja) | 2007-05-31 | 2011-01-19 | シャープ株式会社 | 窒化物系半導体レーザ素子及びその製造方法 |
US20080303033A1 (en) | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
JP5118392B2 (ja) | 2007-06-08 | 2013-01-16 | ローム株式会社 | 半導体発光素子およびその製造方法 |
EP2003696B1 (en) | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
GB2450377A (en) | 2007-06-23 | 2008-12-24 | Ian Charles Williamson | Vehicle load and parking warning system |
JP4781323B2 (ja) | 2007-07-12 | 2011-09-28 | 三菱電機株式会社 | 方向性結合器 |
JP5041902B2 (ja) | 2007-07-24 | 2012-10-03 | 三洋電機株式会社 | 半導体レーザ素子 |
US7733571B1 (en) | 2007-07-24 | 2010-06-08 | Rockwell Collins, Inc. | Phosphor screen and displays systems |
US20090032828A1 (en) * | 2007-08-03 | 2009-02-05 | Philips Lumileds Lighting Company, Llc | III-Nitride Device Grown on Edge-Dislocation Template |
JP5044329B2 (ja) | 2007-08-31 | 2012-10-10 | 株式会社東芝 | 発光装置 |
JP4584293B2 (ja) | 2007-08-31 | 2010-11-17 | 富士通株式会社 | 窒化物半導体装置、ドハティ増幅器、ドレイン電圧制御増幅器 |
JP2009065048A (ja) | 2007-09-07 | 2009-03-26 | Rohm Co Ltd | 半導体発光素子およびその製造方法 |
US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
US7727874B2 (en) | 2007-09-14 | 2010-06-01 | Kyma Technologies, Inc. | Non-polar and semi-polar GaN substrates, devices, and methods for making them |
WO2009037874A1 (ja) | 2007-09-19 | 2009-03-26 | Fuji Electric Holdings Co., Ltd. | 色変換フィルタ、ならびに色変換フィルタおよび有機elディスプレイの製造方法 |
US8058663B2 (en) | 2007-09-26 | 2011-11-15 | Iii-N Technology, Inc. | Micro-emitter array based full-color micro-display |
JP2009081374A (ja) | 2007-09-27 | 2009-04-16 | Rohm Co Ltd | 半導体発光素子 |
US8783887B2 (en) | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
US7985970B2 (en) | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
US20110017298A1 (en) | 2007-11-14 | 2011-01-27 | Stion Corporation | Multi-junction solar cell devices |
CN101855735A (zh) | 2007-11-19 | 2010-10-06 | 松下电器产业株式会社 | 半导体发光装置及半导体发光装置的制造方法 |
JP2011505700A (ja) | 2007-11-30 | 2011-02-24 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 表面ラフニングによる高い光抽出効率の窒化物ベースの発光ダイオード |
US20090140279A1 (en) | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
DE102008012859B4 (de) | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Filterstruktur |
US20090173958A1 (en) | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
US8337029B2 (en) | 2008-01-17 | 2012-12-25 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
GB0801509D0 (en) | 2008-01-28 | 2008-03-05 | Photonstar Led Ltd | Light emitting system with optically transparent thermally conductive element |
US20090226139A1 (en) | 2008-01-31 | 2009-09-10 | Coretek Opto Corp. | Optoelectronic component and optical subassembly for optical communication |
JP2009200178A (ja) | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | 半導体発光素子 |
JP5053893B2 (ja) | 2008-03-07 | 2012-10-24 | 住友電気工業株式会社 | 窒化物半導体レーザを作製する方法 |
KR101092079B1 (ko) | 2008-04-24 | 2011-12-12 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
JP5207812B2 (ja) | 2008-04-25 | 2013-06-12 | 京セラ株式会社 | 発光デバイスおよび発光デバイスの製造方法 |
JP2009283912A (ja) | 2008-04-25 | 2009-12-03 | Sanyo Electric Co Ltd | 窒化物系半導体素子およびその製造方法 |
JP5431359B2 (ja) * | 2008-06-04 | 2014-03-05 | シックスポイント マテリアルズ, インコーポレイテッド | 最初のiii族−窒化物種晶からの熱アンモニア成長による改善された結晶性のiii族−窒化物結晶を生成するための方法 |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
WO2010065163A2 (en) | 2008-06-05 | 2010-06-10 | Soraa, Inc. | Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan |
US20090309127A1 (en) | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
TWI384898B (zh) | 2008-06-18 | 2013-02-01 | Delta Electronics Inc | 可調光之發光二極體驅動電路 |
JP5345363B2 (ja) | 2008-06-24 | 2013-11-20 | シャープ株式会社 | 発光装置 |
US20100006873A1 (en) | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
CN101621101A (zh) | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
US20120000415A1 (en) | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
WO2011044554A1 (en) | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
JP5166146B2 (ja) | 2008-07-10 | 2013-03-21 | スタンレー電気株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP4475358B1 (ja) | 2008-08-04 | 2010-06-09 | 住友電気工業株式会社 | GaN系半導体光素子、GaN系半導体光素子を作製する方法、及びエピタキシャルウエハ |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
KR101332794B1 (ko) | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US20100117118A1 (en) | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
US8148801B2 (en) | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
JP4599442B2 (ja) | 2008-08-27 | 2010-12-15 | 株式会社東芝 | 半導体発光素子の製造方法 |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
CN101874309B (zh) | 2008-09-11 | 2013-01-30 | 住友电气工业株式会社 | 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法 |
US8188486B2 (en) | 2008-09-16 | 2012-05-29 | Osram Sylvania Inc. | Optical disk for lighting module |
US20100295088A1 (en) | 2008-10-02 | 2010-11-25 | Soraa, Inc. | Textured-surface light emitting diode and method of manufacture |
JP2010098068A (ja) | 2008-10-15 | 2010-04-30 | Showa Denko Kk | 発光ダイオード及びその製造方法、並びにランプ |
JP2010118647A (ja) | 2008-10-17 | 2010-05-27 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子、窒化物系半導体発光素子を作製する方法、及び発光装置 |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
JP5530620B2 (ja) | 2008-10-30 | 2014-06-25 | 日立コンシューマエレクトロニクス株式会社 | 液晶表示装置 |
WO2010051537A1 (en) | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
US8017415B2 (en) | 2008-11-05 | 2011-09-13 | Goldeneye, Inc. | Dual sided processing and devices based on freestanding nitride and zinc oxide films |
US8062916B2 (en) | 2008-11-06 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Series connected flip chip LEDs with growth substrate removed |
US20100117106A1 (en) | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
TW201114003A (en) | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
US8169135B2 (en) | 2008-12-17 | 2012-05-01 | Lednovation, Inc. | Semiconductor lighting device with wavelength conversion on back-transferred light path |
US8044609B2 (en) | 2008-12-31 | 2011-10-25 | 02Micro Inc | Circuits and methods for controlling LCD backlights |
US7923741B1 (en) | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
US20110100291A1 (en) | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
US8651711B2 (en) | 2009-02-02 | 2014-02-18 | Apex Technologies, Inc. | Modular lighting system and method employing loosely constrained magnetic structures |
JP2010177651A (ja) | 2009-02-02 | 2010-08-12 | Rohm Co Ltd | 半導体レーザ素子 |
US8309973B2 (en) | 2009-02-12 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based sub-mount for an opto-electronic device |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
TWI381556B (zh) | 2009-03-20 | 2013-01-01 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
US7838878B2 (en) | 2009-03-24 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning |
US8252662B1 (en) | 2009-03-28 | 2012-08-28 | Soraa, Inc. | Method and structure for manufacture of light emitting diode devices using bulk GaN |
WO2010120819A1 (en) | 2009-04-13 | 2010-10-21 | Kaai, Inc. | Optical device structure using gan substrates for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8536618B2 (en) | 2009-11-03 | 2013-09-17 | The Regents Of The University Of California | Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays |
US8455332B2 (en) | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
JP5178623B2 (ja) | 2009-05-08 | 2013-04-10 | サンユレック株式会社 | 照明装置の製造方法 |
US8337030B2 (en) | 2009-05-13 | 2012-12-25 | Cree, Inc. | Solid state lighting devices having remote luminescent material-containing element, and lighting methods |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US8749030B2 (en) | 2009-05-29 | 2014-06-10 | Soraa, Inc. | Surface morphology of non-polar gallium nitride containing substrates |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
DE112010002177B4 (de) | 2009-05-29 | 2023-12-28 | Kyocera Sld Laser, Inc. | Projektionssystem |
US8410717B2 (en) | 2009-06-04 | 2013-04-02 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
US8324840B2 (en) | 2009-06-04 | 2012-12-04 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
US20100309943A1 (en) | 2009-06-05 | 2010-12-09 | The Regents Of The University Of California | LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES |
JP5746620B2 (ja) | 2009-06-26 | 2015-07-08 | 株式会社朝日ラバー | 白色反射材及びその製造方法 |
KR100942234B1 (ko) | 2009-07-23 | 2010-02-12 | (주)로그인디지탈 | 발광다이오드 조명장치 |
US20110038154A1 (en) | 2009-08-11 | 2011-02-17 | Jyotirmoy Chakravarty | System and methods for lighting and heat dissipation |
WO2011021264A1 (ja) | 2009-08-17 | 2011-02-24 | 株式会社 東芝 | 窒化物半導体発光素子 |
US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
US8350273B2 (en) | 2009-08-31 | 2013-01-08 | Infineon Technologies Ag | Semiconductor structure and a method of forming the same |
US8207554B2 (en) | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
DE112010003700T5 (de) | 2009-09-18 | 2013-02-28 | Soraa, Inc. | Power-leuchtdiode und verfahren mit stromdichtebetrieb |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US20110068700A1 (en) | 2009-09-21 | 2011-03-24 | Suntec Enterprises | Method and apparatus for driving multiple LED devices |
US20110186887A1 (en) | 2009-09-21 | 2011-08-04 | Soraa, Inc. | Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
JP5387302B2 (ja) | 2009-09-30 | 2014-01-15 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
US8269245B1 (en) | 2009-10-30 | 2012-09-18 | Soraa, Inc. | Optical device with wavelength selective reflector |
US8575642B1 (en) | 2009-10-30 | 2013-11-05 | Soraa, Inc. | Optical devices having reflection mode wavelength material |
KR20120104985A (ko) | 2009-11-03 | 2012-09-24 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 결정 식각에 의한 초발광 다이오드 |
US7893445B2 (en) | 2009-11-09 | 2011-02-22 | Cree, Inc. | Solid state emitter package including red and blue emitters |
TW201118946A (en) | 2009-11-24 | 2011-06-01 | Chun-Yen Chang | Method for manufacturing free-standing substrate and free-standing light-emitting device |
US8187901B2 (en) * | 2009-12-07 | 2012-05-29 | Micron Technology, Inc. | Epitaxial formation support structures and associated methods |
US8105852B2 (en) | 2010-01-15 | 2012-01-31 | Koninklijke Philips Electronics N.V. | Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate |
JP5251893B2 (ja) | 2010-01-21 | 2013-07-31 | 日立電線株式会社 | 導電性iii族窒化物結晶の製造方法及び導電性iii族窒化物基板の製造方法 |
US20110186874A1 (en) | 2010-02-03 | 2011-08-04 | Soraa, Inc. | White Light Apparatus and Method |
EP2533307B1 (en) | 2010-02-03 | 2015-04-08 | Citizen Holdings Co., Ltd. | Led drive circuit |
US20110182056A1 (en) | 2010-06-23 | 2011-07-28 | Soraa, Inc. | Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials |
US20110215348A1 (en) | 2010-02-03 | 2011-09-08 | Soraa, Inc. | Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials |
US8716049B2 (en) | 2010-02-23 | 2014-05-06 | Applied Materials, Inc. | Growth of group III-V material layers by spatially confined epitaxy |
CN102792778B (zh) | 2010-02-26 | 2014-09-10 | 西铁城控股株式会社 | Led驱动电路 |
EP2543119B1 (en) | 2010-03-04 | 2020-02-12 | The Regents of The University of California | Semi-polar iii-nitride optoelectronic devices on m-plane gan substrates with miscuts in the ranges 1 to 15 degrees or -1 to -15 degrees in the c-direction |
US20110247556A1 (en) | 2010-03-31 | 2011-10-13 | Soraa, Inc. | Tapered Horizontal Growth Chamber |
US20110244663A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
JP2011243963A (ja) | 2010-04-21 | 2011-12-01 | Mitsubishi Chemicals Corp | 半導体発光装置及び半導体発光装置の製造方法 |
KR101064020B1 (ko) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
CN102237454A (zh) | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | 半导体光电元件及其制造方法 |
US8431942B2 (en) | 2010-05-07 | 2013-04-30 | Koninklijke Philips Electronics N.V. | LED package with a rounded square lens |
US8459814B2 (en) | 2010-05-12 | 2013-06-11 | National Taiwan University Of Science And Technology | White-light emitting devices with stabilized dominant wavelength |
US8293551B2 (en) | 2010-06-18 | 2012-10-23 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20110317397A1 (en) | 2010-06-23 | 2011-12-29 | Soraa, Inc. | Quantum dot wavelength conversion for hermetically sealed optical devices |
US20120007102A1 (en) | 2010-07-08 | 2012-01-12 | Soraa, Inc. | High Voltage Device and Method for Optical Devices |
WO2012017685A1 (ja) | 2010-08-06 | 2012-02-09 | パナソニック株式会社 | 半導体発光素子 |
DE102010034913B4 (de) | 2010-08-20 | 2023-03-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierendes Bauelement und Verfahren zur Herstellung des Strahlung emittierenden Bauelements |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US8597967B1 (en) | 2010-11-17 | 2013-12-03 | Soraa, Inc. | Method and system for dicing substrates containing gallium and nitrogen material |
US8040071B2 (en) | 2010-12-14 | 2011-10-18 | O2Micro, Inc. | Circuits and methods for driving light sources |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US8525396B2 (en) | 2011-02-11 | 2013-09-03 | Soraa, Inc. | Illumination source with direct die placement |
US8643257B2 (en) | 2011-02-11 | 2014-02-04 | Soraa, Inc. | Illumination source with reduced inner core size |
US8324835B2 (en) | 2011-02-11 | 2012-12-04 | Soraa, Inc. | Modular LED lamp and manufacturing methods |
US8618742B2 (en) | 2011-02-11 | 2013-12-31 | Soraa, Inc. | Illumination source and manufacturing methods |
KR102006007B1 (ko) | 2011-04-19 | 2019-08-01 | 이동일 | Led 구동 장치 및 이를 이용한 led 구동 방법 |
WO2012158709A1 (en) * | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
USD662899S1 (en) | 2011-08-15 | 2012-07-03 | Soraa, Inc. | Heatsink |
USD662900S1 (en) | 2011-08-15 | 2012-07-03 | Soraa, Inc. | Heatsink for LED |
CN102954366B (zh) | 2011-08-16 | 2016-06-22 | 惠州元晖光电股份有限公司 | 具有光切换阵列的光引擎 |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
TWI466323B (zh) | 2011-11-07 | 2014-12-21 | Ind Tech Res Inst | 發光二極體 |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
US8752975B2 (en) | 2012-01-10 | 2014-06-17 | Michael Rubino | Multi-function telescopic flashlight with universally-mounted pivotal mirror |
US20130022758A1 (en) | 2012-01-27 | 2013-01-24 | Soraa, Inc. | Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications |
CN104247052B (zh) | 2012-03-06 | 2017-05-03 | 天空公司 | 具有减少导光效果的低折射率材料层的发光二极管 |
DE102013007698A1 (de) | 2012-05-04 | 2013-11-07 | Soraa, Inc. | LED-Lampen mit verbesserter Lichtqualität |
US8888332B2 (en) | 2012-06-05 | 2014-11-18 | Soraa, Inc. | Accessories for LED lamps |
US8981432B2 (en) * | 2012-08-10 | 2015-03-17 | Avogy, Inc. | Method and system for gallium nitride electronic devices using engineered substrates |
US8829800B2 (en) | 2012-09-07 | 2014-09-09 | Cree, Inc. | Lighting component with independent DC-DC converters |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
-
2013
- 2013-10-15 US US14/054,234 patent/US9978904B2/en active Active
- 2013-10-16 JP JP2013215853A patent/JP2014090169A/ja active Pending
-
2018
- 2018-05-22 US US15/986,253 patent/US20180269351A1/en not_active Abandoned
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003037288A (ja) * | 2001-07-26 | 2003-02-07 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体結晶膜の成長方法 |
JP2010509177A (ja) * | 2006-11-15 | 2010-03-25 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 有機金属化学気相成長法による、高品質のN面GaN、InNおよびAlNならびにそれらの合金のヘテロエピタキシャル成長の方法 |
JP2009147271A (ja) * | 2007-12-18 | 2009-07-02 | Tohoku Univ | 基板製造方法およびiii族窒化物半導体結晶 |
US20110033966A1 (en) * | 2009-08-10 | 2011-02-10 | Applied Materials, Inc. | Growth of n-face led with integrated processing system |
WO2011022724A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface |
WO2011022730A1 (en) * | 2009-08-21 | 2011-02-24 | The Regents Of The University Of California | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations |
JP2011044669A (ja) * | 2009-08-24 | 2011-03-03 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体光素子、及びiii族窒化物半導体光素子を作製する方法 |
US20120091465A1 (en) * | 2010-10-13 | 2012-04-19 | Soraa, Inc. | Method of Making Bulk InGaN Substrates and Devices Thereon |
US20120199952A1 (en) * | 2012-01-09 | 2012-08-09 | Soraa, Inc. | Method for Growth of Indium-Containing Nitride Films |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016094309A (ja) * | 2014-11-13 | 2016-05-26 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
JP2018531514A (ja) * | 2015-10-08 | 2018-10-25 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色〜赤色の発光(>600nm)を有するIII族窒化物半導体発光デバイス及びこれを作製するための方法 |
JP2022071179A (ja) * | 2015-10-08 | 2022-05-13 | オステンド・テクノロジーズ・インコーポレーテッド | 琥珀色~赤色の発光を有するiii族窒化物半導体発光led |
US10693040B2 (en) | 2017-08-18 | 2020-06-23 | Samsung Electronics Co., Ltd. | Light emitting device and light emitting device package |
JP2019112302A (ja) * | 2019-04-03 | 2019-07-11 | 古河機械金属株式会社 | 単結晶半導体層、自立基板、積層構造体及びこれらの製造方法 |
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US20180269351A1 (en) | 2018-09-20 |
US9978904B2 (en) | 2018-05-22 |
US20140103356A1 (en) | 2014-04-17 |
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