JP2014057103A - 露光装置及び液体供給方法 - Google Patents
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
【解決手段】 露光装置100は、基板Wを保持可能な保持部と、該保持部を囲む撥液性の上面とを有するウエハステージWSTと、比抵抗が変化する所定物質を液体Lqに混入させる混入装置を有し、前記所定物質が混入した前記液体を投影光学系PLとウエハステージWSTとの間に液体供給ノズル131Aを介して供給することにより液浸領域を形成する液浸装置132とを備えている。
【選択図】図1
Description
Claims (20)
- 投影光学系と液体を介して基板を露光する露光装置であって、
前記基板を保持可能な保持部と、前記保持部を囲む撥液性の上面とを有するステージと、
比抵抗が変化する所定物質を前記液体に混入させる混入装置と、
前記所定物質が混入した前記液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成する液浸部材と、
を備える露光装置。 - 前記ステージの上面と前記保持された基板の上面が同じ高さとなるように、前記基板が前記ステージに保持される請求項1に記載の露光装置。
- 投影光学系と液体を介して基板を露光する露光装置であって、
前記基板を保持可能な保持部と、前記保持部を囲んで前記保持された基板と同じ高さの上面を有するステージと、
比抵抗が変化する所定物質を前記液体に混入させる混入装置と、
前記所定物質が混入した前記液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成する液浸部材と、
を備える露光装置。 - 前記基板と前記ステージの上面との間には所定の間隙が形成される請求項2又は3に記載の露光装置。
- 前記所定の物質が溶解した液体の温調を行なう温調装置をさらに有し、
前記温調が行なわれた液体が前記液浸部材により供給される請求項1〜4のいずれか一項に記載の露光装置。 - 投影光学系と液体を介して基板を露光する露光装置であって、
前記基板を保持可能なステージと、
比抵抗が変化する所定物質を前記液体に混入させる混入装置と、
前記所定物質が混入した前記液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成する液浸部材と、
前記所定の物質が溶解した液体の温調を行なう温調装置と、を備え、
前記温調が行なわれた後に前記所定の物質が溶解した液体により前記液浸領域が形成される露光装置。 - 前記温調された液体の透過率変動に基づいて、前記投影光学系の結像特性の調整を行う制御装置と、をさらに有する請求項5又は6に記載の露光装置。
- 前記所定物質は前記液体に溶解可能な気体を含む請求項1〜7のいずれか一項に記載の露光装置。
- 前記気体は二酸化炭素を含む請求項8に記載の露光装置。
- 前記ステージの上面は、フッ素系樹脂材料又はアクリル系樹脂材料によりコーティングされている請求項1〜9のいずれか一項に記載の露光装置。
- 投影光学系と液体とを介して基板を露光する露光装置に用いられる液体供給方法であって、
前記基板を保持可能な保持部と、前記保持部を囲む撥液性の上面とを有するステージを、前記投影光学系下へ位置づけることと、
比抵抗が変化する所定物質を液体に溶解させることと、
前記所定物質が溶解された液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成することと、を含む液体供給方法。 - 前記ステージの上面と前記保持された基板の上面が同じ高さとなるように、前記基板が前記ステージに保持される請求項11に記載の液体供給方法。
- 投影光学系と液体とを介して基板を露光する露光装置に用いられる液体供給方法であって、
前記基板を保持可能な保持部と、前記保持部を囲んで前記保持された基板と同じ高さの上面とを有するステージを、前記投影光学系下へ位置づけることと、
比抵抗が変化する所定物質を液体に溶解させることと、
前記所定物質が溶解された液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成することと、を含む液体供給方法。 - 前記基板と前記ステージの上面との間には所定の間隙が形成される請求項12又は13に記載の液体供給方法。
- 前記所定の物質が溶解した液体の温調を行なうことをさらに含み、
前記温調が行なわれた液体により前記液浸領域が形成される請求項11〜14のいずれか一項に記載の液体供給方法。 - 投影光学系と液体とを介して基板を露光する露光装置に用いられる液体供給方法であって、
前記基板を保持可能なステージを前記投影光学系下へ位置づけることと、
比抵抗が変化する所定物質を液体に溶解させることと、
前記所定の物質が溶解した液体の温調を行なうことと、
前記所定物質が溶解された液体を前記投影光学系と前記ステージとの間に供給して液浸領域を形成することを含み、
前記温調が行なわれた後に前記所定の物質が溶解した液体により前記液浸領域が形成される液体供給方法。 - 前記温調された液体の透過率変動に基づいて、前記投影光学系の結像特性の調整を行うことをさらに含む請求項15又は16に記載の液体供給方法。
- 前記所定物質は前記液体に溶解可能な気体を含む請求項11〜17のいずれか一項に記載の液体供給方法。
- 前記気体は二酸化炭素を含む請求項18に記載の液体供給方法。
- 前記ステージの上面は、フッ素系樹脂材料又はアクリル系樹脂材料によりコーティングされている請求項11〜19のいずれか一項に記載の液体供給方法。
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JP2010173281A Expired - Fee Related JP5594646B2 (ja) | 2005-04-25 | 2010-08-02 | 露光装置及び露光装置の制御方法 |
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JP2010173281A Expired - Fee Related JP5594646B2 (ja) | 2005-04-25 | 2010-08-02 | 露光装置及び露光装置の制御方法 |
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EP (1) | EP1876635A4 (ja) |
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US9335639B2 (en) | 2016-05-10 |
JP5594646B2 (ja) | 2014-09-24 |
KR20070122442A (ko) | 2007-12-31 |
KR101396620B1 (ko) | 2014-05-16 |
KR101344142B1 (ko) | 2013-12-23 |
KR20130012035A (ko) | 2013-01-30 |
JP2012129557A (ja) | 2012-07-05 |
EP1876635A4 (en) | 2010-06-30 |
US20120044469A1 (en) | 2012-02-23 |
JP5594653B2 (ja) | 2014-09-24 |
JP2015146043A (ja) | 2015-08-13 |
JPWO2006115186A1 (ja) | 2008-12-18 |
JP2010245572A (ja) | 2010-10-28 |
US20160246184A1 (en) | 2016-08-25 |
US20070139632A1 (en) | 2007-06-21 |
WO2006115186A1 (ja) | 2006-11-02 |
JP5125505B2 (ja) | 2013-01-23 |
US9618854B2 (en) | 2017-04-11 |
EP1876635A1 (en) | 2008-01-09 |
JP5831825B2 (ja) | 2015-12-09 |
JP6249179B2 (ja) | 2017-12-20 |
US8064039B2 (en) | 2011-11-22 |
KR20130105922A (ko) | 2013-09-26 |
KR101466533B1 (ko) | 2014-11-27 |
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