JP2014041945A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP2014041945A JP2014041945A JP2012183931A JP2012183931A JP2014041945A JP 2014041945 A JP2014041945 A JP 2014041945A JP 2012183931 A JP2012183931 A JP 2012183931A JP 2012183931 A JP2012183931 A JP 2012183931A JP 2014041945 A JP2014041945 A JP 2014041945A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims description 30
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000001020 plasma etching Methods 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000011261 inert gas Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 77
- 239000013078 crystal Substances 0.000 description 21
- 239000002131 composite material Substances 0.000 description 15
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004630 atomic force microscopy Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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Abstract
【解決手段】二酸化珪素層40によって被覆された主面MSを有する炭化珪素基板が準備される。二酸化珪素層40に開口部OPがエッチングによって形成される。開口部OPにおいて炭化珪素基板上にエッチングの残渣RSが存在する。不活性ガスのみが導入されるプラズマエッチングによって残渣RSが除去される。残渣RSが除去された後に、開口部OPが形成されたマスク層40によって被覆された炭化珪素基板に対して加熱下で反応性ガスの供給を行うことで、炭化珪素基板の主面MSにトレンチが形成される。
【選択図】図11
Description
一般に、ポリタイプ4Hの炭化珪素単結晶を(000−1)面から見ると、図18に示すように、Si原子(またはC原子)は、A層の原子(図中の実線)と、この下に位置するB層の原子(図中の破線)と、この下に位置するC層の原子(図中の一点鎖線)と、この下に位置するB層の原子(図示せず)とが繰り返し設けられている。つまり4つの層ABCBを1周期としてABCBABCBABCB・・・のような周期的な積層構造が設けられている。
Claims (5)
- 二酸化珪素層によって被覆された主面を有する炭化珪素基板を準備する工程と、
前記二酸化珪素層上に、パターンを有するフォトレジスト層を形成する工程と、
前記フォトレジスト層をマスクとして用いたエッチングによって、前記二酸化珪素層に、前記主面の一部を露出する開口部を形成する工程とを備え、前記開口部によって露出された前記主面の一部の上に前記エッチングの残渣が存在し、さらに
不活性ガスのみが導入されるプラズマエッチングによって前記残渣を除去する工程と、
前記残渣を除去する工程の後に、前記開口部が形成された前記二酸化珪素層によって被覆された前記主面を有する前記炭化珪素基板に対して加熱下で反応性ガスの供給を行うことで、前記炭化珪素基板の前記主面に、側壁面を有するトレンチを形成する工程と、
前記トレンチの前記側壁面上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程とを備える、炭化珪素半導体装置の製造方法。 - 前記プラズマエッチングは、1%以下の残留酸素量を有する雰囲気下で行われる、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記反応性ガスはハロゲンガスを含む、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記反応性ガスは酸素ガスを含む、請求項3に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチが形成された前記主面上において、高さ10nm以上の突起の数密度が1cm-2以下である、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2012183931A JP5900243B2 (ja) | 2012-08-23 | 2012-08-23 | 炭化珪素半導体装置の製造方法 |
PCT/JP2013/068849 WO2014030453A1 (ja) | 2012-08-23 | 2013-07-10 | 炭化珪素半導体装置の製造方法 |
EP13831436.4A EP2889898A4 (en) | 2012-08-23 | 2013-07-10 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
US13/944,562 US8772113B2 (en) | 2012-08-23 | 2013-07-17 | Method for manufacturing silicon carbide semiconductor device |
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JP2012183931A JP5900243B2 (ja) | 2012-08-23 | 2012-08-23 | 炭化珪素半導体装置の製造方法 |
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JP2014041945A true JP2014041945A (ja) | 2014-03-06 |
JP5900243B2 JP5900243B2 (ja) | 2016-04-06 |
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US (1) | US8772113B2 (ja) |
EP (1) | EP2889898A4 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015220408A (ja) * | 2014-05-20 | 2015-12-07 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2018046053A (ja) * | 2016-09-12 | 2018-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US9171726B2 (en) * | 2009-11-06 | 2015-10-27 | Infineon Technologies Ag | Low noise semiconductor devices |
JP2016048747A (ja) * | 2014-08-28 | 2016-04-07 | 株式会社豊田中央研究所 | トレンチゲート電極を備えている半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002237494A (ja) * | 2001-02-08 | 2002-08-23 | Sony Corp | 半導体素子およびその製造方法 |
WO2012017798A1 (ja) * | 2010-08-03 | 2012-02-09 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
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- 2013-07-10 WO PCT/JP2013/068849 patent/WO2014030453A1/ja active Application Filing
- 2013-07-10 EP EP13831436.4A patent/EP2889898A4/en not_active Withdrawn
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002237494A (ja) * | 2001-02-08 | 2002-08-23 | Sony Corp | 半導体素子およびその製造方法 |
WO2012017798A1 (ja) * | 2010-08-03 | 2012-02-09 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015220408A (ja) * | 2014-05-20 | 2015-12-07 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2018046053A (ja) * | 2016-09-12 | 2018-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US10600896B2 (en) | 2016-09-12 | 2020-03-24 | Renesas Electronics Corporation | Semiconductor device and method for producing the same |
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Publication number | Publication date |
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US20140057424A1 (en) | 2014-02-27 |
EP2889898A1 (en) | 2015-07-01 |
US8772113B2 (en) | 2014-07-08 |
EP2889898A4 (en) | 2016-05-04 |
WO2014030453A1 (ja) | 2014-02-27 |
JP5900243B2 (ja) | 2016-04-06 |
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