JP2014038323A - 表示装置、及び該表示装置を有する電子機器 - Google Patents
表示装置、及び該表示装置を有する電子機器 Download PDFInfo
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- JP2014038323A JP2014038323A JP2013149240A JP2013149240A JP2014038323A JP 2014038323 A JP2014038323 A JP 2014038323A JP 2013149240 A JP2013149240 A JP 2013149240A JP 2013149240 A JP2013149240 A JP 2013149240A JP 2014038323 A JP2014038323 A JP 2014038323A
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- Prior art keywords
- film
- transistor
- insulating film
- interlayer insulating
- substrate
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Classifications
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- G—PHYSICS
- G02—OPTICS
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Abstract
【解決手段】画素領域の外側に隣接し、該画素領域の各画素に含まれる第1のトランジスタに信号を供給する少なくとも一つの第2のトランジスタを含む駆動回路領域が形成された第1の基板と、第1の基板と対向するように設けられた第2の基板と、第1の基板と第2の基板間に挟持された液晶層と、を有し、第1のトランジスタ及び第2のトランジスタ上に無機絶縁材料で形成された第1の層間絶縁膜と、第1の層間絶縁膜上に有機絶縁材料で形成された第2の層間絶縁膜と、第2の層間絶縁膜上に無機絶縁材料で形成された第3の層間絶縁膜と、を有し、第3の層間絶縁膜は、画素領域上の一部に設けられ、該第3の層間絶縁膜の端部が駆動回路領域よりも内側に形成される。
【選択図】図1
Description
本実施の形態では、表示装置の一形態として、液晶パネルを用いた表示装置について図1及び図2を用いて説明する。
本実施の形態では、表示装置の一形態として、有機ELパネルを用いた表示装置について図3及び図4を用いて説明する。なお、実施の形態1で示す構成と同一の箇所には同一の符号を付し、その詳細な説明は省略する。
本実施の形態では、先の実施の形態で示した表示装置と組み合わせが可能な、イメージセンサについて説明する。
本実施の形態では、本発明の一態様の表示装置を用いたタブレット型端末の一例を説明する。
本実施の形態では、先の実施の形態で示した表示装置などを搭載した電子機器の例について説明する。
102 第1の基板
103 第2のトランジスタ
104 ゲート電極
105 第3のトランジスタ
106 ゲート絶縁膜
107 容量素子
108 半導体層
110 ソース電極
112 ドレイン電極
113 電極
114 第1の層間絶縁膜
116 第2の層間絶縁膜
118 容量電極
120 第3の層間絶縁膜
122 画素電極
124 第1の配向膜
126 隔壁
128 発光層
130 電極
140 ゲートドライバ回路部
142 画素領域
144 ソースドライバ回路部
146 FPC端子部
148 FPC
150 液晶素子
152 第2の基板
153 有色膜
154 遮光膜
156 有機保護絶縁膜
158 対向電極
160 スペーサ
162 液晶層
164 第2の配向膜
166 シール材
170 発光素子
172 充填材
4001 第1の基板
4002 フォトダイオード素子
4014 第1の層間絶縁膜
4016 第2の層間絶縁膜
4020 第3の層間絶縁膜
4024 第1の配向膜
4030 第1のトランジスタ
4032 容量素子
4034 液晶素子
4036 ゲート線
4040 トランジスタ
4052 第2の基板
4056 トランジスタ
4057 ゲート選択線
4058 リセット信号線
4059 映像信号線
4060 第2のトランジスタ
4062 第3のトランジスタ
4071 出力信号線
4084 第2の配向膜
4085 有色膜
4086 有機絶縁膜
4088 対向電極
4096 液晶層
5040 ゲートドライバ回路部
5042 画素領域
8033 留め具
8034 スイッチ
8035 電源スイッチ
8036 スイッチ
8038 操作スイッチ
8630 筐体
8631 表示部
8631a 表示部
8631b 表示部
8633 太陽電池
8634 充放電制御回路
8635 バッテリー
8636 DCDCコンバータ
8637 コンバータ
9300 筐体
9301 ボタン
9302 マイクロフォン
9303 表示部
9304 スピーカ
9305 カメラ
9310 筐体
9311 表示部
9320 筐体
9321 ボタン
9322 マイクロフォン
9323 表示部
Claims (8)
- 画素電極と、該画素電極と電気的に接続される少なくとも一つの第1のトランジスタを含む画素が複数個配列されている画素領域と、
前記画素領域の外側に隣接し、該画素領域の各画素に含まれる前記第1のトランジスタに信号を供給する少なくとも一つの第2のトランジスタを含む駆動回路領域と、が形成された第1の基板と、
前記第1の基板と対向するように設けられた第2の基板と、前記第1の基板と前記第2の基板間に挟持された液晶層と、を有し、
前記第1のトランジスタ及び前記第2のトランジスタ上に無機絶縁材料で形成された第1の層間絶縁膜と、
前記第1の層間絶縁膜上に有機絶縁材料で形成された第2の層間絶縁膜と、
前記第2の層間絶縁膜上に無機絶縁材料で形成された第3の層間絶縁膜と、を有し、
前記第3の層間絶縁膜は、前記画素領域上の一部に設けられ、該第3の層間絶縁膜の端部が前記駆動回路領域よりも内側に形成される
ことを特徴とする表示装置。 - 請求項1において、
前記画素電極上に設けられた第1の配向膜と、
前記第1の配向膜上に形成された前記液晶層と、
前記液晶層上に設けられた第2の配向膜と、
前記第2の配向膜上に設けられた対向電極と、
前記対向電極上に設けられた有機保護絶縁膜と、
前記有機保護絶縁膜上に設けられた有色膜及び遮光膜と、
前記有色膜及び前記遮光膜上に設けられた前記第2の基板と、を有する
ことを特徴とする表示装置。 - 画素電極と、該画素電極と電気的に接続される少なくとも一つの第1のトランジスタを含む画素が複数個配列されている画素領域と、
前記画素領域の外側に隣接し、該画素領域の各画素に含まれる前記第1のトランジスタに信号を供給する少なくとも一つの第2のトランジスタを含む駆動回路領域と、が形成された第1の基板と、
前記第1の基板と対向するように設けられた第2の基板と、前記第1の基板と前記第2の基板間に挟持された発光層と、を有し、
前記第1のトランジスタ及び前記第2のトランジスタ上に無機絶縁材料で形成された第1の層間絶縁膜と、
前記第1の層間絶縁膜上に有機絶縁材料で形成された第2の層間絶縁膜と、
前記第2の層間絶縁膜上に無機絶縁材料で形成された第3の層間絶縁膜と、を有し、
前記第3の層間絶縁膜は、前記画素領域上の一部に設けられ、該第3の層間絶縁膜の端部が前記駆動回路領域よりも内側に形成される
ことを特徴とする表示装置。 - 請求項3において、
前記画素電極上に設けられた前記発光層と、
前記発光層上に設けられた電極と、を有する
ことを特徴とする表示装置。 - 請求項1または請求項3において、
前記第3の層間絶縁膜は、窒化シリコン膜、窒化酸化シリコン膜、酸化アルミニウム膜の中から選ばれたいずれか一つである
ことを特徴とする表示装置。 - 請求項1または請求項3において、
前記第1のトランジスタ及び前記第2のトランジスタは、チャネル形成領域を形成する半導体材料が酸化物半導体である
ことを特徴とする表示装置。 - 請求項6において、
前記第1のトランジスタ及び前記第2のトランジスタは、
ゲート電極と、
前記ゲート電極上に形成された酸化物半導体からなる半導体層と、
前記半導体層上に形成されたソース電極及びドレイン電極と、を有する
ことを特徴とする表示装置。 - 請求項1乃至請求項7のいずれか一つに記載する表示装置を有する電子機器。
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JP2016005872A Active JP6058832B2 (ja) | 2012-07-20 | 2016-01-15 | 液晶表示装置 |
JP2017171667A Active JP6552567B2 (ja) | 2012-07-20 | 2017-09-07 | 表示装置 |
JP2018221897A Active JP6585806B2 (ja) | 2012-07-20 | 2018-11-28 | 表示装置、及び電子機器 |
JP2019162060A Withdrawn JP2020079923A (ja) | 2012-07-20 | 2019-09-05 | 表示装置 |
JP2021190060A Withdrawn JP2022036994A (ja) | 2012-07-20 | 2021-11-24 | 表示装置 |
JP2022155871A Active JP7378560B2 (ja) | 2012-07-20 | 2022-09-29 | 表示装置 |
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JP (7) | JP6208485B2 (ja) |
KR (6) | KR102093060B1 (ja) |
CN (2) | CN104488016B (ja) |
DE (1) | DE112013003609B4 (ja) |
TW (6) | TWI804808B (ja) |
WO (1) | WO2014014039A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2020516006A (ja) * | 2017-03-31 | 2020-05-28 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | 表示パネルおよびその製造方法、並びに表示装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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KR20210151304A (ko) | 2020-06-04 | 2021-12-14 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112542469B (zh) * | 2020-12-02 | 2022-11-08 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板、显示面板及电子设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1048668A (ja) * | 1996-08-02 | 1998-02-20 | Sharp Corp | 液晶表示装置及びその製造方法 |
JPH1062818A (ja) * | 1996-06-12 | 1998-03-06 | Lg Electron Inc | 液晶表示装置の製造方法 |
JP2007250244A (ja) * | 2006-03-14 | 2007-09-27 | Seiko Epson Corp | エレクトロルミネッセンス装置、電子機器、およびエレクトロルミネッセンス装置の製造方法 |
US20100065841A1 (en) * | 2008-09-12 | 2010-03-18 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate and method of manufacturing the same |
JP2011154358A (ja) * | 2009-12-28 | 2011-08-11 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
US20110291096A1 (en) * | 2010-05-28 | 2011-12-01 | Chang-Il Ryoo | Array substrate and method of fabricating the same |
JP2012039102A (ja) * | 2010-07-16 | 2012-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置とその作製方法 |
Family Cites Families (170)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
JPH11505377A (ja) | 1995-08-03 | 1999-05-18 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 半導体装置 |
JP3963974B2 (ja) * | 1995-12-20 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
FR2751468A1 (fr) * | 1996-07-15 | 1998-01-23 | Lgelectronics | Procede d'attaque pour un dispositif presentant un materiau organique |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP4372939B2 (ja) | 1999-02-12 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6576924B1 (en) | 1999-02-12 | 2003-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate |
EP1031873A3 (en) | 1999-02-23 | 2005-02-23 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
TW518637B (en) | 1999-04-15 | 2003-01-21 | Semiconductor Energy Lab | Electro-optical device and electronic equipment |
JP4531194B2 (ja) | 1999-04-15 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 電気光学装置及び電子機器 |
EP1049167A3 (en) * | 1999-04-30 | 2007-10-24 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
KR100684578B1 (ko) | 2000-06-13 | 2007-02-20 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치용 어레이기판과 그 제조방법 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4101511B2 (ja) | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
TWI269248B (en) | 2002-05-13 | 2006-12-21 | Semiconductor Energy Lab | Display device |
TWI263339B (en) | 2002-05-15 | 2006-10-01 | Semiconductor Energy Lab | Light emitting device and method for manufacturing the same |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4175877B2 (ja) * | 2002-11-29 | 2008-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
SG142140A1 (en) | 2003-06-27 | 2008-05-28 | Semiconductor Energy Lab | Display device and method of manufacturing thereof |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
KR101034181B1 (ko) | 2003-08-21 | 2011-05-12 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 제조방법 |
JP2005173106A (ja) | 2003-12-10 | 2005-06-30 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
WO2005088726A1 (ja) | 2004-03-12 | 2005-09-22 | Japan Science And Technology Agency | アモルファス酸化物及び薄膜トランジスタ |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
KR101076426B1 (ko) | 2004-06-05 | 2011-10-25 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
KR101037085B1 (ko) | 2004-06-05 | 2011-05-26 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
KR101116816B1 (ko) | 2004-06-05 | 2012-02-28 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
US8217396B2 (en) | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
KR100998527B1 (ko) | 2004-11-10 | 2010-12-07 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 비정질 산화물 및 전계 효과 트랜지스터 |
CN101057338B (zh) | 2004-11-10 | 2011-03-16 | 佳能株式会社 | 采用无定形氧化物的场效应晶体管 |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
JP5126729B2 (ja) | 2004-11-10 | 2013-01-23 | キヤノン株式会社 | 画像表示装置 |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
JP2007053355A (ja) * | 2005-07-22 | 2007-03-01 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
WO2007011061A1 (en) | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101103374B1 (ko) | 2005-11-15 | 2012-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR101226444B1 (ko) | 2005-12-21 | 2013-01-28 | 삼성디스플레이 주식회사 | 표시 기판의 제조 방법 및 표시 기판 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4655942B2 (ja) | 2006-01-16 | 2011-03-23 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法および電子機器 |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
EP1887417A1 (en) | 2006-07-24 | 2008-02-13 | Bridgestone Corporation | Electrophoretic display panel |
JP4993963B2 (ja) * | 2006-07-24 | 2012-08-08 | 株式会社ブリヂストン | 情報表示用パネル |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
EP1895545B1 (en) | 2006-08-31 | 2014-04-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
CN100459100C (zh) * | 2006-09-30 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | 平坦化方法及顶层金属层隔离结构的形成方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR20080077538A (ko) * | 2007-02-20 | 2008-08-25 | 삼성전자주식회사 | 박막트랜지스터 기판과 액정표시장치 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (en) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Oxynitride semiconductor |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US7903219B2 (en) * | 2007-08-16 | 2011-03-08 | Sony Corporation | Liquid crystal display device |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP2009271103A (ja) | 2008-04-30 | 2009-11-19 | Hitachi Displays Ltd | 液晶表示装置 |
WO2009142089A1 (ja) * | 2008-05-20 | 2009-11-26 | シャープ株式会社 | 表示パネル用の基板、この基板を備える表示パネル、表示パネル用の基板の製造方法および表示パネルの製造方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5616012B2 (ja) | 2008-10-24 | 2014-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8941617B2 (en) | 2008-11-07 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Image input-output device with color layer between photodetector and display elements to improve the accuracy of reading images in color |
JP2010117549A (ja) * | 2008-11-13 | 2010-05-27 | Seiko Epson Corp | 表示装置の製造方法 |
JP2012042490A (ja) * | 2008-12-16 | 2012-03-01 | Sharp Corp | 液晶表示用パネル及び液晶表示装置 |
JP2010182582A (ja) | 2009-02-06 | 2010-08-19 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置、電子機器 |
KR101739154B1 (ko) | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
EP2460183A4 (en) | 2009-07-31 | 2015-10-07 | Semiconductor Energy Lab | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
KR101949670B1 (ko) | 2009-10-09 | 2019-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011052382A1 (en) | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102009305B1 (ko) * | 2009-11-06 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR101523358B1 (ko) | 2009-12-04 | 2015-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR101311874B1 (ko) | 2009-12-14 | 2013-09-26 | 엘지디스플레이 주식회사 | 반사투과형 액정표시장치용 어레이 기판의 제조 방법 |
WO2011081041A1 (en) * | 2009-12-28 | 2011-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
KR102008754B1 (ko) | 2010-01-24 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
KR101399611B1 (ko) | 2010-02-05 | 2014-05-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 반도체 장치의 제조 방법 |
KR101084191B1 (ko) | 2010-02-16 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
KR20180110212A (ko) | 2010-02-19 | 2018-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 및 이를 이용한 표시 장치 |
KR102047354B1 (ko) * | 2010-02-26 | 2019-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101305378B1 (ko) | 2010-03-19 | 2013-09-06 | 엘지디스플레이 주식회사 | 터치인식 횡전계형 액정표시장치 및 이의 제조 방법 |
JP2011221097A (ja) | 2010-04-05 | 2011-11-04 | Seiko Epson Corp | 電気泳動表示装置用基板、電気泳動表示装置、および電子機器 |
KR101827340B1 (ko) * | 2010-07-14 | 2018-02-09 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
WO2012035975A1 (en) | 2010-09-15 | 2012-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and manufacturing method thereof |
KR101426515B1 (ko) | 2010-09-15 | 2014-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 표시 장치 |
KR20120042029A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
JP5437971B2 (ja) * | 2010-10-29 | 2014-03-12 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP5372900B2 (ja) | 2010-12-15 | 2013-12-18 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5906132B2 (ja) * | 2012-05-09 | 2016-04-20 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102099262B1 (ko) * | 2012-07-11 | 2020-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치, 및 액정 표시 장치의 구동 방법 |
KR102093060B1 (ko) | 2012-07-20 | 2020-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
DE112013003606B4 (de) | 2012-07-20 | 2022-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
US9455220B2 (en) | 2014-05-31 | 2016-09-27 | Freescale Semiconductor, Inc. | Apparatus and method for placing stressors on interconnects within an integrated circuit device to manage electromigration failures |
-
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- 2013-07-10 KR KR1020187038087A patent/KR102093060B1/ko active IP Right Grant
- 2013-07-10 DE DE112013003609.6T patent/DE112013003609B4/de active Active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1062818A (ja) * | 1996-06-12 | 1998-03-06 | Lg Electron Inc | 液晶表示装置の製造方法 |
JPH1048668A (ja) * | 1996-08-02 | 1998-02-20 | Sharp Corp | 液晶表示装置及びその製造方法 |
JP2007250244A (ja) * | 2006-03-14 | 2007-09-27 | Seiko Epson Corp | エレクトロルミネッセンス装置、電子機器、およびエレクトロルミネッセンス装置の製造方法 |
US20100065841A1 (en) * | 2008-09-12 | 2010-03-18 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate and method of manufacturing the same |
JP2011154358A (ja) * | 2009-12-28 | 2011-08-11 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその作製方法 |
US20110291096A1 (en) * | 2010-05-28 | 2011-12-01 | Chang-Il Ryoo | Array substrate and method of fabricating the same |
JP2012039102A (ja) * | 2010-07-16 | 2012-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置とその作製方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020516006A (ja) * | 2017-03-31 | 2020-05-28 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | 表示パネルおよびその製造方法、並びに表示装置 |
JP7007268B2 (ja) | 2017-03-31 | 2022-01-24 | 京東方科技集團股▲ふん▼有限公司 | 表示パネルおよびその製造方法、並びに表示装置 |
JP2019215535A (ja) * | 2018-06-12 | 2019-12-19 | シャープ株式会社 | 表示パネル及び表示装置 |
CN110596974A (zh) * | 2018-06-12 | 2019-12-20 | 夏普株式会社 | 显示面板和显示装置 |
US11009758B2 (en) | 2018-06-12 | 2021-05-18 | Sharp Kabushiki Kaisha | Display panel and display device |
CN110596974B (zh) * | 2018-06-12 | 2022-04-15 | 夏普株式会社 | 显示面板和显示装置 |
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