JP2014003076A - Package for mounting electronic component and electronic device using the same - Google Patents

Package for mounting electronic component and electronic device using the same Download PDF

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Publication number
JP2014003076A
JP2014003076A JP2012135936A JP2012135936A JP2014003076A JP 2014003076 A JP2014003076 A JP 2014003076A JP 2012135936 A JP2012135936 A JP 2012135936A JP 2012135936 A JP2012135936 A JP 2012135936A JP 2014003076 A JP2014003076 A JP 2014003076A
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base
electronic component
hole
substrate
terminal
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Masahiko Taniguchi
雅彦 谷口
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a small package for mounting an electronic component which efficiently radiates heat generated from electronic components even when the electronic component having large output is mounted.SOLUTION: A package for mounting an electronic component includes: a base material 1 which has an upper surface and a lower surface and includes a mounting part of an electronic component 6 that is provided on the upper surface and a through hole 1f provided so as to penetrate from the upper surface to the lower surface; and a terminal 5 which is fixed to the base substrate 1 by a sealing material 3 and passes through the through hole 1f, the terminal 5 which includes an upper end protruding upward from the upper surface of the base material 1 and a lower end protruding downward from the lower surface of the base material 1 and electrically connects with the electronic component 6. An irregular part is formed on a side surface of the base material 1. This structure enlarges a connection area between the side surface of the base material 1 and an exterior housing member 2 to which an electronic device is attached and allows generated heat to be radiated to the exterior through the first base material having large heat conductivity.

Description

本発明は、光通信分野等に用いられる光半導体素子等の電子部品を搭載して収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for mounting and storing electronic components such as optical semiconductor elements used in the field of optical communication and the like, and an electronic apparatus using the same.

従来の電子装置に用いられる電子部品搭載用パッケージは、上面に電子部品の搭載部を有する基体と、基体に設けられた端子とを含んでいるものであり、例えば、基体は貫通孔を有しており、封止材が貫通孔に充填されており、端子は封止材を貫通して基体に固定されている。電子部品は、基体の上面に搭載され、例えば蓋体によって覆われる。   An electronic component mounting package used in a conventional electronic device includes a base body having an electronic component mounting portion on an upper surface and terminals provided on the base body. For example, the base body has a through hole. The sealing material is filled in the through hole, and the terminal is fixed to the base body through the sealing material. The electronic component is mounted on the upper surface of the base and is covered with, for example, a lid.

特開平８−130266号公報JP-A-8-130266

しかしながら、光半導体素子等の電子部品から発生する熱を放散する基体と、電子装置に取り付けられる外部ハウジング部材との接触が不十分なため、より大出力で駆動されるような光半導体素子等の電子部品から発生する熱を十分に放散することが困難なものとなってしまう可能性があった。   However, since the contact between the base that dissipates heat generated from electronic components such as an optical semiconductor element and the external housing member attached to the electronic device is insufficient, an optical semiconductor element or the like that is driven at a higher output It may be difficult to sufficiently dissipate the heat generated from the electronic component.

本発明は上記従来技術の問題点に鑑み案出されたものであり、その目的は、電子部品から発生する熱を効率的に放散することが可能となる電子部品搭載用パッケージおよびそれを用いた電子装置を提供する。   The present invention has been devised in view of the above problems of the prior art, and an object of the present invention is to use an electronic component mounting package capable of efficiently dissipating heat generated from the electronic component and the same. An electronic device is provided.

本発明の一つの態様による電子部品搭載用パッケージは、基体と、端子とを含んでいる。基体は、上面と、下面と、上面から下面にかけて設けられた貫通孔とを含んでいる。端子は、基体に封止材により固定され貫通孔内を通っている。端子は、基体の上面から上方へ突出している上端と、基体の下面から下方へ突出している下端を有している。基体は、その側面に凹凸部が形成されている。   An electronic component mounting package according to an aspect of the present invention includes a base and terminals. The base includes an upper surface, a lower surface, and a through hole provided from the upper surface to the lower surface. The terminal is fixed to the base by a sealing material and passes through the through hole. The terminal has an upper end protruding upward from the upper surface of the base and a lower end protruding downward from the lower surface of the base. As for the base | substrate, the uneven | corrugated | grooved part is formed in the side surface.

本発明の他の態様による電子装置は、上記構成の電子部品搭載用パッケージと、電子部品搭載用パッケージに搭載された電子部品と、基体の上面に接合した蓋体とを含んでいる。   An electronic device according to another aspect of the present invention includes the electronic component mounting package configured as described above, an electronic component mounted on the electronic component mounting package, and a lid bonded to the upper surface of the base.

本発明の一つの態様による電子部品搭載用パッケージにおいて、基体は、その側面に凹凸部が形成されていることから、基体の側面と、電子装置を取り付ける外部ハウジング部材との接触箇所が大きいものとなり、電子部品から発生する熱を効率よく外部に放散することが可能となり、大出力の光半導体素子等の電子部品を安定して駆動することが可能となる。   In the electronic component mounting package according to one aspect of the present invention, since the uneven portion is formed on the side surface of the base body, the contact portion between the side surface of the base body and the external housing member to which the electronic device is attached becomes large. The heat generated from the electronic component can be efficiently dissipated to the outside, and the electronic component such as a high-power optical semiconductor element can be driven stably.

本発明の実施の形態の電子装置の一例を示す斜視図である。It is a perspective view which shows an example of the electronic device of embodiment of this invention. 図１に示す電子装置のＡ−Ａ線における断面を示す断面図である。It is sectional drawing which shows the cross section in the AA of the electronic device shown in FIG. 本発明の実施の形態の電子部品搭載用パッケージの一例を示す断面図である。It is sectional drawing which shows an example of the electronic component mounting package of embodiment of this invention. （ａ）は図３に示す本発明の電子部品搭載用パッケージの下面の一例を示す下面図であり、（ｂ）は同様の本発明の電子部品搭載用パッケージの他の例を示す下面図である。(A) is a bottom view which shows an example of the lower surface of the electronic component mounting package of this invention shown in FIG. 3, (b) is a bottom view which shows the other example of the same electronic component mounting package of this invention. is there. 本発明の実施の形態の電子部品搭載用パッケージの他の例を示す断面図である。It is sectional drawing which shows the other example of the electronic component mounting package of embodiment of this invention. （ａ）は本発明の実施の形態の電子部品搭載用パッケージの他の例を示す断面図であり、（ｂ）は（ａ）のＡ−Ａ線における断面を示す断面図である。(A) is sectional drawing which shows the other example of the electronic component mounting package of embodiment of this invention, (b) is sectional drawing which shows the cross section in the AA of (a).

本発明の例示的な実施形態について図面を参照して説明する。   Exemplary embodiments of the present invention will be described with reference to the drawings.

本発明の実施形態における電子装置は、図１、図２に示されているように、電子部品搭載用パッケージ15と、電子部品搭載用パッケージ15に搭載された電子部品６と、回路基板６ａと、温度制御素子11と、ＰＤ素子12と、反射鏡13と温度モニタ素子14と、第１の基体１ａの上面に接合した蓋体９とを含んでいる。なお、図１において、電子装置は仮想のｘｙｚ空間内に設けられており、以下、便宜的に「上方向」とは仮想のｚ軸の正方向のことをいう。   As shown in FIGS. 1 and 2, the electronic device according to the embodiment of the present invention includes an electronic component mounting package 15, an electronic component 6 mounted on the electronic component mounting package 15, and a circuit board 6a. , A temperature control element 11, a PD element 12, a reflecting mirror 13, a temperature monitoring element 14, and a lid 9 bonded to the upper surface of the first base 1a. In FIG. 1, the electronic device is provided in a virtual xyz space. Hereinafter, for convenience, the “upward direction” refers to the positive direction of the virtual z-axis.

電子部品搭載用パッケージ15は、例えば、第１の基体１ａと、第１の基体１ａの下面に接合された第２の基体１ｂと、第１の基体１ａと第２の基体１ｂとを貫通するように第２の基体１ｂに固定された端子５（以下、信号端子５ともいう）と、中継基板６ｂと、ＤＣ端子８とを含んでいる。第１の基体１ａは、上面と上下方向に設けられた第１の貫通孔１ｄとを有している。第１の基体１ａまたは第２の基体１ｂ、または第１の基体１ａ、第２の基体１ｂの両方には、その側面に凹凸部が形成されている。第２の基体１ｂは、第１の基体１ａの下面に接合されており、上下方向に設けられ第１の貫通孔１ｄに重なるように配置されている。信号端子５は、第２の貫通孔１ｆに充填された封止材３により第２の基体１ｂに固定され第１の貫通孔１ｄ内を通っている。信号端子５は、第１の基体１ａの上面よりも上方へ突出している上端と第２の基体１ｂの下面から下方へ突出している下端とを有している。   The electronic component mounting package 15 penetrates, for example, the first base 1a, the second base 1b bonded to the lower surface of the first base 1a, and the first base 1a and the second base 1b. Thus, the terminal 5 (hereinafter also referred to as the signal terminal 5) fixed to the second base 1b, the relay board 6b, and the DC terminal 8 are included. The first base 1a has an upper surface and a first through hole 1d provided in the vertical direction. The first substrate 1a or the second substrate 1b, or both the first substrate 1a and the second substrate 1b are provided with uneven portions on the side surfaces. The second base 1b is bonded to the lower surface of the first base 1a, and is arranged in the vertical direction so as to overlap the first through hole 1d. The signal terminal 5 is fixed to the second base 1b by the sealing material 3 filled in the second through hole 1f and passes through the first through hole 1d. The signal terminal 5 has an upper end protruding upward from the upper surface of the first base 1a and a lower end protruding downward from the lower surface of the second base 1b.

図１に示された例では、第１の基体１ａの上面の中央部を搭載部１ｃとして、ペルチェ素子等の温度制御素子11および回路基板６ａを介して電子部品６が搭載されている。電子部品６の端子はボンディングワイヤ７で回路基板６ａ上の配線に電気的に接続されている。中継基板６ｂは、回路基板６ａと信号端子５との電気的な接続を中継している。信号端子５の第１の基体１ａ側の上端部と中継基板６ｂの信号線路とがろう材等の接合材で電気的に接続され、中継基板６ｂの上面の信号線路と回路基板６ａの配線とがボンディングワイヤ７で電気的に接続されることで、電子部品６と信号端子５とが電気的に接続されている。第２の基体１ｂは、信号端子５を固定するための第２の貫通孔１ｆ以外に、３つの第２の貫通孔１ｆが形成されている。ＤＣ端子８は、グラウンドとして機能する端子であり、３つの第２の貫通孔１ｆのそれぞれに２本ずつが封止材３によって固定され、第１の基体１ａに形成された、対応する第１の貫通孔１ｄからＤＣ端子８の端部が突出している。また、電子部品６の端子は、回路基板６ａの配線を介して、ＤＣ端子８の一つに電気的に接続されている。これによって、信号端子５は電子部品６と外部電気回路（図示せず）との間の入出力信号を伝送する伝送路として機能する。   In the example shown in FIG. 1, an electronic component 6 is mounted via a temperature control element 11 such as a Peltier element and a circuit board 6a, with the central portion of the upper surface of the first base 1a being a mounting portion 1c. Terminals of the electronic component 6 are electrically connected to wiring on the circuit board 6a by bonding wires 7. The relay board 6b relays the electrical connection between the circuit board 6a and the signal terminal 5. The upper end of the signal terminal 5 on the first base 1a side and the signal line of the relay board 6b are electrically connected by a bonding material such as a brazing material, and the signal line on the upper surface of the relay board 6b and the wiring of the circuit board 6a Are electrically connected by the bonding wire 7 so that the electronic component 6 and the signal terminal 5 are electrically connected. In the second base 1b, three second through holes 1f are formed in addition to the second through hole 1f for fixing the signal terminal 5. The DC terminal 8 is a terminal that functions as a ground. Two DC terminals 8 are fixed to the three second through holes 1f by the sealing material 3 and formed on the first base 1a. The end of the DC terminal 8 protrudes from the through hole 1d. Further, the terminal of the electronic component 6 is electrically connected to one of the DC terminals 8 through the wiring of the circuit board 6a. Thereby, the signal terminal 5 functions as a transmission path for transmitting an input / output signal between the electronic component 6 and an external electric circuit (not shown).

図１に示された例では、主となる電子部品６がＬＤ素子である例を示しており、ＰＤ素子12はＬＤ素子の発振状態をモニタし、反射鏡13はＬＤ素子から発振されたレーザー光を回路基板６ａ（第１の基体１ａ）の上面から垂直方向に反射させており、温度モニタ素子14は、回路基板６ａ上の温度を測定して温度制御素子11へフィードバックしている。回路
基板６ａ上には、ＰＤ素子12，反射鏡13および温度モニタ素子14が搭載されている。そして、ＤＣ端子８は、上述したグラウンド用以外に、温度制御素子11，ＰＤ素子12，および温度モニタ素子14への電力供給用のもの等がある。 The example shown in FIG. 1 shows an example in which the main electronic component 6 is an LD element, the PD element 12 monitors the oscillation state of the LD element, and the reflecting mirror 13 is a laser oscillated from the LD element. Light is reflected vertically from the upper surface of the circuit board 6a (first base 1a), and the temperature monitoring element 14 measures the temperature on the circuit board 6a and feeds it back to the temperature control element 11. A PD element 12, a reflecting mirror 13, and a temperature monitoring element 14 are mounted on the circuit board 6a. The DC terminal 8 is for supplying power to the temperature control element 11, the PD element 12, and the temperature monitor element 14 in addition to the above-described ground.

なお、図１に示された例では電子部品６等が搭載された状態がわかるように蓋体９を外した状態を示しているが、図２に示された例のように、破線で示されたような蓋体９を溶接またはろう接で蓋体接合部１ｅに接合することによって、本発明の実施形態における電子装置が基本的に構成される。図２に示された例の蓋体９は、反射鏡13によって第１の基体１ａの上面から垂直方向に反射されたレーザー光を通すための、透光性部材がはめられた窓部を設けた例を示している。   In the example shown in FIG. 1, the state in which the lid 9 is removed is shown so that the state in which the electronic component 6 or the like is mounted can be seen. However, as shown in the example in FIG. The electronic device in the embodiment of the present invention is basically configured by joining the lid body 9 as described above to the lid joint portion 1e by welding or brazing. The cover 9 in the example shown in FIG. 2 is provided with a window portion fitted with a translucent member for allowing the laser beam reflected in the vertical direction from the upper surface of the first base 1a by the reflecting mirror 13 to pass therethrough. An example is shown.

なお、図１および図２に示された例では、基体は第１の基体１ａが第２の基体１ｂの上面に接合されている構成としているが、第２の基体１ｂのみからなるものとし、第２の基体１ｂの上面を搭載部１ｃとして、ペルチェ素子等の温度制御素子11および回路基板６ａを介して電子部品６が搭載されているものとしてもよい。また、１個の電子部品６を、回路基板６ａおよび温度制御素子11を介して第１の基体１ａの搭載部１ｃの上に搭載しているが、複数の電子部品６を搭載してもよいし、回路基板６ａおよび温度制御素子11を介さずに第１の基体１ａの搭載部１ｃの上に直接搭載してもよいし、ボンディングワイヤ７で電子部品６と信号端子５とを直接接続してもよい。また、信号端子５の数も、電子部品６の数および電子部品６の電極の数に応じて複数であっても構わない。そして、ＤＣ端子８の数も、温度制御素子11、ＰＤ素子12、温度モニタ素子14等の数に応じて決まるものである。なお、中継基板６ｂを介して信号端子５と電子部品６をボンディングワイヤ７で接続することで、ボンディングワイヤ７の長さを短くすることができるようになるので、インピーダンスの不整合をより良く抑制することができ好ましい。   In the example shown in FIG. 1 and FIG. 2, the base body is configured such that the first base body 1a is bonded to the upper surface of the second base body 1b. However, the base body is composed only of the second base body 1b. The upper surface of the second base 1b may be the mounting portion 1c, and the electronic component 6 may be mounted via the temperature control element 11 such as a Peltier element and the circuit board 6a. Further, although one electronic component 6 is mounted on the mounting portion 1c of the first base 1a via the circuit board 6a and the temperature control element 11, a plurality of electronic components 6 may be mounted. However, it may be mounted directly on the mounting portion 1c of the first base 1a without using the circuit board 6a and the temperature control element 11, or the electronic component 6 and the signal terminal 5 are directly connected by the bonding wire 7. May be. Also, the number of signal terminals 5 may be plural depending on the number of electronic components 6 and the number of electrodes of electronic components 6. The number of DC terminals 8 is also determined according to the number of temperature control elements 11, PD elements 12, temperature monitoring elements 14, and the like. In addition, since the length of the bonding wire 7 can be shortened by connecting the signal terminal 5 and the electronic component 6 with the bonding wire 7 through the relay substrate 6b, the impedance mismatch is better suppressed. This is preferable.

本発明の実施形態における電子部品搭載用パッケージ15は、上面および下面を有しており、上面に設けられた電子部品６の搭載部と上面から下面にかけて設けられた貫通孔１ｆとを含む基体１と、基体１に封止材３により固定されているとともに貫通孔１ｆ内を通っており、基体１の上面から上方へ突出している上端と基体１の下面から下方へ突出している下端とを有しており、電子部品６が電気的に接続される端子５とを有しており、基体１の側面には、凹凸部が形成されているものである。   The electronic component mounting package 15 according to the embodiment of the present invention has an upper surface and a lower surface, and includes a base 1 including a mounting portion of the electronic component 6 provided on the upper surface and a through hole 1f provided from the upper surface to the lower surface. And an upper end that is fixed to the base 1 by the sealing material 3 and passes through the through-hole 1f and protrudes upward from the upper surface of the base 1 and a lower end that protrudes downward from the lower surface of the base 1. The electronic component 6 has a terminal 5 to which the electronic component 6 is electrically connected, and a concavo-convex portion is formed on the side surface of the base 1.

電子部品搭載用パッケージ15はこのような構成により、基体１は、その側面に凹凸部が形成されていることから、基体１の側面と、電子装置を取り付ける外部ハウジング部材２との接触箇所が大きいものとなり、電子部品６から発生する熱を効率よく外部に放散することができる電子部品搭載用パッケージ15となる。   Since the electronic component mounting package 15 has such a configuration, the substrate 1 has a concavo-convex portion formed on its side surface, so that the contact portion between the side surface of the substrate 1 and the external housing member 2 to which the electronic device is attached is large. Thus, the electronic component mounting package 15 can efficiently dissipate the heat generated from the electronic component 6 to the outside.

また、基体は、第１の基体と第２の基体とを有しており、第１の基体は第２の基体の上面に配置されている場合には、信号端子５は所定のインピーダンスに整合されて第２の基体１ｂの貫通孔１ｆに充填した封止材３で固定されることから、信号端子５が通る第１の基体１ａの貫通孔１ｂは、信号端子５とともにエアー同軸構造としてインピーダンスを整合させるためにその径を小さいものとすることができるので、電子部品６の搭載部１ｃの面積を大きくすることができる。   Further, the base has a first base and a second base. When the first base is disposed on the upper surface of the second base, the signal terminal 5 is matched with a predetermined impedance. Since it is fixed by the sealing material 3 filled in the through hole 1f of the second base 1b, the through hole 1b of the first base 1a through which the signal terminal 5 passes has an impedance as an air coaxial structure together with the signal terminal 5. Since the diameter can be made small in order to match, the area of the mounting portion 1c of the electronic component 6 can be increased.

また、図３〜図５に示された例のように、上記構成において、第２の基体１ｂの外形寸法よりも第１の基体１ａの外形寸法の方が大きいときには、第１の基体１ａの側面に、電子装置が取り付けられる外部ハウジング部材２を密着させやすくなるので、電子部品６から発生した熱を第１の基体１ａを介して外部により放出しやすい電子部品搭載用パッケージ15となる。   Further, as in the example shown in FIGS. 3 to 5, in the above configuration, when the outer dimension of the first base 1a is larger than the outer dimension of the second base 1b, the first base 1a Since the external housing member 2 to which the electronic device is attached is easily brought into close contact with the side surface, the electronic component mounting package 15 that easily releases heat generated from the electronic component 6 to the outside through the first base 1a is obtained.

また、図５に示された例のように、上記構成において、第１の基体１ａおよび第２の基体１ｂの少なくとも一方が、第１の基体１ａと第２の基体１ｂとの接合部に沿った溝10を有するときには、搭載される電子部品６に熱が発生して第１の基体１ａと第２の基体１ｂとの熱膨張係数の差による熱応力が発生しても、この熱応力は溝10によって緩和されて、第１の基体１ａと第２の基体１ｂとの接合部に加わる熱応力は小さいものとなるので、より気密信頼性に優れた高信頼性の電子装置を得ることのできる電子部品搭載用パッケージ15となる。   Further, as in the example shown in FIG. 5, in the above-described configuration, at least one of the first base 1a and the second base 1b is along the joint portion between the first base 1a and the second base 1b. When the groove 10 is provided, even if heat is generated in the mounted electronic component 6 and a thermal stress is generated due to a difference in thermal expansion coefficient between the first base 1a and the second base 1b, the thermal stress is Since the thermal stress applied to the joint portion between the first base 1a and the second base 1b is reduced by the groove 10, a highly reliable electronic device with better airtight reliability can be obtained. The electronic component mounting package 15 can be obtained.

また、図６に示された例のように、上記各構成において、第１の基体１ａの下面の搭載部１ｃに対向する部分から外周部にかけて第１の基体１ａよりも熱伝導率が高い接合材４が被着されており、第２の基体１ｂは、外周部の接合材４で第１の基体１ａに接合されているときには、電子部品６から発生した熱が第１の基体１ａの下面の接合材４を介して第１の基体１ａの側面側に伝導しやすくなるので、より効率よく外部に放出することができる半導体素子収納用パッケージとなる。   Further, as in the example shown in FIG. 6, in each of the above-described configurations, bonding having higher thermal conductivity than the first base body 1 a is performed from the portion facing the mounting portion 1 c on the lower surface of the first base body 1 a to the outer peripheral portion. When the material 4 is applied and the second substrate 1b is bonded to the first substrate 1a by the bonding material 4 at the outer peripheral portion, the heat generated from the electronic component 6 is the lower surface of the first substrate 1a. Since it becomes easy to conduct to the side surface side of the 1st base | substrate 1a through this joining material 4, it becomes a package for semiconductor element accommodation which can discharge | release outside more efficiently.

本発明の実施形態における電子装置は、上記構成のいずれかの本発明の実施形態における電子部品搭載用パッケージ15と、該電子部品搭載用パッケージ15の前記搭載部１ｃに搭載された電子部品６と、前記第１の基体１ａまたは前記第２の基体１ｂの上面に接合された蓋体９とを有していることから、電子部品６から発生した熱を効率よく第１の基体１ａまたは前記第２の基体１ｂの側面から外部に放出できるので、小型で高出力の電子装置となる。   An electronic device according to an embodiment of the present invention includes an electronic component mounting package 15 according to any one of the above-described configurations of the present invention, and an electronic component 6 mounted on the mounting portion 1c of the electronic component mounting package 15. And the lid 9 bonded to the upper surface of the first base 1a or the second base 1b, the heat generated from the electronic component 6 can be efficiently generated from the first base 1a or the second base 1b. Since it can be discharged to the outside from the side surface of the second substrate 1b, a small and high output electronic device is obtained.

本発明の実施形態における電子装置は、上記構成において、電子部品６と搭載部１ｃとの間に温度制御素子11を有しているときには、放熱性が向上しているので、温度制御素子11によってより発熱の大きい電子部品６の温度を一定に保つことができるようになり、温度変化によって発生する電子部品６の特性変化がなくなるので、より特性の安定した電子装置となる。   In the electronic device according to the embodiment of the present invention, in the above configuration, when the temperature control element 11 is provided between the electronic component 6 and the mounting portion 1c, the heat dissipation is improved. The temperature of the electronic component 6 that generates more heat can be kept constant, and the characteristic change of the electronic component 6 caused by the temperature change is eliminated, so that an electronic device with more stable characteristics can be obtained.

第１の基体１ａは搭載される電子部品６またはセラミック製の回路基板６ａの熱膨張係数に近いものが好ましく、またコストの安いものとして、例えば、Ｆｅ−Ｍｎ合金等の鉄系の合金または純鉄等の金属、銅（Ｃｕ）または銅系の合金が選ばれる。より具体的には、Ｆｅ99.6質量％−Ｍｎ0.4質量％系のＳＰＣ（Steel Plate Cold）材がある。第１の
基体１ａは上述の金属部材に圧延加工または打ち抜き加工等の金属加工方法を施すことによって所定形状に製作され、貫通孔１ｂはドリル加工または金型による打ち抜き加工によって形成される。また、第１の基体１ａが搭載部１ｃとして突出部を有する形状の場合は、切削加工またはプレス加工することによって形成することができる。 The first base 1a is preferably close to the thermal expansion coefficient of the electronic component 6 or ceramic circuit board 6a to be mounted, and as a low cost, for example, an iron-based alloy such as Fe-Mn alloy or pure A metal such as iron, copper (Cu) or a copper-based alloy is selected. More specifically, there is an SPC (Steel Plate Cold) material of Fe 99.6 mass% -Mn 0.4 mass%. The first substrate 1a is manufactured in a predetermined shape by applying a metal processing method such as rolling or punching to the above-described metal member, and the through hole 1b is formed by drilling or punching with a mold. Moreover, when the 1st base | substrate 1a is a shape which has a protrusion part as the mounting part 1c, it can form by cutting or pressing.

第１の基体１ａは厚みが0.25〜１ｍｍの平板状であり、その形状には特に制限はないが、例えば直径が３〜６ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円
板状，一辺が３〜15ｍｍの四角板状等である。 The first substrate 1a has a flat plate shape with a thickness of 0.25 to 1 mm, and the shape thereof is not particularly limited. For example, a part of a circle with a diameter of 3 to 6 mm and a radius of 1.5 to 8 mm is formed. It is a semicircular plate shape cut out, a square plate shape with a side of 3 to 15 mm, or the like.

第１の基体１ａの厚みは0.5ｍｍ以上が好ましい。厚みが0.5ｍｍ未満の場合は、電子部品６を保護するための金属製の蓋体９を金属製の第１の基体１ａの上面に接合する際に、接合温度等の接合条件によっては第１の基体１ａが曲がったりして変形し易くなる。また、厚みが１ｍｍを超えると、第２の基体１ｂと接合して得られる電子部品搭載用パッケージ15および電子装置の厚みが不要に厚いものとなり、小型化し難くなるので、第１の基体１ａの厚みは１ｍｍ以下であるのが好ましい。小型化のためには第１の基体１ａの厚みと第２の基体１ｂの厚みとを加えて２ｍｍ以下であるのがよい。   The thickness of the first substrate 1a is preferably 0.5 mm or more. When the thickness is less than 0.5 mm, when the metal lid 9 for protecting the electronic component 6 is bonded to the upper surface of the metal first base 1a, the first may be changed depending on the bonding conditions such as the bonding temperature. The base 1a is bent and easily deformed. On the other hand, if the thickness exceeds 1 mm, the electronic component mounting package 15 and the electronic device obtained by joining to the second base 1b become unnecessarily thick and difficult to miniaturize. The thickness is preferably 1 mm or less. In order to reduce the size, the thickness of the first base 1a and the thickness of the second base 1b are preferably added to 2 mm or less.

また、第１の基体１ａは、その側面に凹凸部が形成されていると、第１の基体１ａの側
面と、電子装置を取り付ける外部ハウジング部材２との接触箇所が大きいものとなり、電子部品６から発生する熱を効率よく外部に放散することができる電子部品搭載用パッケージ15となる。このように、第１の基体１ａがその側面に凹凸部を有する場合は、切削加工することによって形成することができる。この場合、図２に示された例のように、電子装置を取り付ける外部ハウジング部材２の内側側面にも凹凸を設けると第１の基体１ａの側面と、外部ハウジング部材２との接触箇所が更に大きいものとなり、電子部品６から発生する熱を効率よく外部に放散することができ好ましい。また、この凹凸部を第１の基体１ａの側面に螺旋状に形成すると、凹凸部がめねじ状となって容易に電子装置を外部ハウジング部材２に取り付けることが可能となり好ましい。この場合、電子装置を取り付ける外部ハウジング部材２の内側側面にも螺旋状の凹凸を設けると更に電子装置を外部ハウジング部材２に取り付けることが容易となり好ましい。このように、第１の基体１ａがその側面に螺旋状の凹凸部を有する場合は、切削加工することによって形成することができる。なお、凹凸部の凹部の深さは0.1〜１ｍｍとするのがよい。これにより、良好に電子装置
を外部ハウジング部材２に取り付けることが可能となり好ましい。 In addition, when the first base 1a has a concavo-convex portion on its side surface, the contact portion between the side surface of the first base 1a and the external housing member 2 to which the electronic device is attached becomes large, and the electronic component 6 The electronic component mounting package 15 can efficiently dissipate the heat generated from the outside. Thus, when the 1st base | substrate 1a has an uneven | corrugated | grooved part in the side surface, it can form by cutting. In this case, as in the example shown in FIG. 2, if unevenness is also provided on the inner side surface of the external housing member 2 to which the electronic device is attached, the contact portion between the side surface of the first base 1 a and the outer housing member 2 is further increased. This is preferable because the heat generated from the electronic component 6 can be efficiently dissipated to the outside. In addition, it is preferable to form the concave and convex portions in a spiral shape on the side surface of the first base body 1a because the concave and convex portions are formed into a female screw shape so that the electronic device can be easily attached to the external housing member 2. In this case, it is preferable to provide spiral irregularities on the inner side surface of the external housing member 2 to which the electronic device is attached, because it is easier to attach the electronic device to the external housing member 2. Thus, when the 1st base | substrate 1a has a helical uneven | corrugated | grooved part in the side surface, it can form by cutting. The depth of the concave portion of the concave and convex portion is preferably 0.1 to 1 mm. As a result, it is possible to satisfactorily attach the electronic device to the outer housing member 2, which is preferable.

搭載部１ｃの周辺には第１の基体１ａの上面から下面にかけて形成された直径が0.23〜1.15ｍｍの第１の貫通孔１ｄを複数有する。信号端子５が通る第１の貫通孔１ｄの直径は、中心に信号端子５が貫通することで特性インピーダンスが50Ωのエアー同軸が形成されるような寸法とする。例えば、信号端子５の直径が0.2ｍｍの場合であれば、第１の貫通
孔１ｄの直径は0.46ｍｍとすればよい。ＤＣ端子８が通る第１の貫通孔１ｄについては、ＤＣ端子８は特性インピーダンスの影響を受けないので、ＤＣ端子８と第１の基体１ａとがショートしない程度に、上記寸法よりも小さくして搭載部１ｃの面積を大きくするとよい。また、逆に第１の貫通孔１ｄを上記寸法よりも大きくして、図１に示された例のように複数のＤＣ端子８を貫通させても構わない。この場合は、例えば図１に示された例のように、円形ではなく長円形とすることで搭載部１ｃの面積を大きくすることができる。上述したように、電子部品６の数および電子部品６の端子の数に応じて信号端子５の数が、また電子部品６以外の他の素子等の数に応じてＤＣ端子８の数が決まるので、それに応じて第１の貫通孔１ｄも適宜形成すればよい。 A plurality of first through holes 1d having a diameter of 0.23 to 1.15 mm are formed around the mounting portion 1c from the upper surface to the lower surface of the first base 1a. The diameter of the first through hole 1d through which the signal terminal 5 passes is set such that an air coaxial with a characteristic impedance of 50Ω is formed by the signal terminal 5 passing through the center. For example, if the diameter of the signal terminal 5 is 0.2 mm, the diameter of the first through hole 1d may be 0.46 mm. With respect to the first through hole 1d through which the DC terminal 8 passes, the DC terminal 8 is not affected by the characteristic impedance. The area of the mounting portion 1c may be increased. On the contrary, the first through hole 1d may be made larger than the above dimension, and a plurality of DC terminals 8 may be penetrated as in the example shown in FIG. In this case, for example, as in the example shown in FIG. 1, the area of the mounting portion 1 c can be increased by making it oval instead of circular. As described above, the number of signal terminals 5 is determined according to the number of electronic components 6 and the number of terminals of electronic component 6, and the number of DC terminals 8 is determined according to the number of other elements other than electronic component 6. Therefore, the first through hole 1d may be appropriately formed accordingly.

また、第１の基体１ａの表面には、耐食性に優れ、ろう材との濡れ性に優れた厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法によって順次被着させておくのがよい。これにより、第１の基体１ａが酸化腐食するのを有効に防止することができるとともに、電子部品６または回路基板６ａあるいは蓋体９等を第１の基体１ａに良好にろう付けすることができる。   Further, on the surface of the first substrate 1a, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 5 μm, which are excellent in corrosion resistance and wettability with a brazing material, are successively deposited by a plating method. It is good to leave it attached. Thereby, it is possible to effectively prevent the first base body 1a from being oxidatively corroded, and it is possible to satisfactorily braze the electronic component 6, the circuit board 6a, the lid body 9 or the like to the first base body 1a. .

第２の基体１ｂは、第２の貫通孔１ｆ内に封止材３を介して信号端子５およびＤＣ端子８を固定するだけでなく、蓋体９とともに、封止材３および接合材４によって電子部品６を気密に封止する機能を有する。このため、第２の基体１ｂは、第１の基体１ａと第２の基体１ｂとの接合部が第１の貫通孔１ｄを取り囲むように、外周部で第１の基体１ａと接合されている。少なくとも外周部で接合されていれば気密に封止することができ、第２の基体１ｂの上面の全面が接合材４によって第１の基体１ａの下面に接合されていてもかまわない。   The second base 1b not only fixes the signal terminal 5 and the DC terminal 8 in the second through hole 1f via the sealing material 3, but also the lid 9 together with the sealing material 3 and the bonding material 4. It has a function of hermetically sealing the electronic component 6. For this reason, the second base 1b is joined to the first base 1a at the outer peripheral portion so that the joint between the first base 1a and the second base 1b surrounds the first through hole 1d. . If it is bonded at least at the outer peripheral portion, it can be hermetically sealed, and the entire upper surface of the second substrate 1 b may be bonded to the lower surface of the first substrate 1 a by the bonding material 4.

また、第２の基体１ｂは、第１の基体１ａと同様の厚みが0.25〜１ｍｍの平板状であり、その形状には特に制限はないが、例えば直径が３〜６ｍｍの円板状，半径が1.5〜８ｍ
ｍの円周の一部を切り取った半円板状，一辺が３〜15ｍｍの四角板状等である。第２の基体１ｂはその外周部が第１の基体１ａの下面に接合されるので、必要な大きさの第２の貫通孔１ｆが形成されるとともに、外周部が第１の貫通孔１ｄよりも大きいものであればよい。例えば、図３および図４（ａ）に示された例のように、平面視の外形が第１の基体１ａより一回り小さい第２の基体１ｂを第１の基体１ａの下面に接合することによって、複
数の第１の貫通孔１ｄをまとめて封止してもよいし、図４（ｂ）に示された例のように、第２の基体１ｂを複数の第１の貫通孔１ｄのそれぞれよりも一回り大きい複数個にして、複数の第１の貫通孔１ｄをそれぞれ封止するようにしてもよい。また、このように第２の基体１ｂが小さいと、第１の基体１ａとの間で熱膨張係数に差がある場合には、発生する熱応力が小さくなるので好ましい。１つの第２の基体１ｂに電子部品搭載用パッケージ15の全ての信号端子５が固定されていると、第１の基体１ａと第２の基体１ｂとを接合する際に、信号端子５の相対位置が正確に位置決めできるとともに、複数の第１の貫通孔１ｄと複数の第２の貫通孔１ｆ（およびそれら第２の貫通孔１ｆ内に固定された複数の信号端子５）との位置合わせが一括して行なえるので、組み立て精度の良い電子部品搭載用パッケージ15を効率よく得ることができる。 The second base 1b is a flat plate having a thickness of 0.25 to 1 mm, which is the same as the first base 1a, and there is no particular limitation on the shape thereof. 1.5 ~ 8m
For example, a semi-disc shape obtained by cutting a part of the circumference of m, a square plate shape having a side of 3 to 15 mm, and the like. Since the outer peripheral portion of the second base 1b is bonded to the lower surface of the first base 1a, a second through hole 1f having a necessary size is formed, and the outer peripheral portion is formed from the first through hole 1d. As long as it is large. For example, as in the example shown in FIGS. 3 and 4A, the second base 1b whose outer shape in plan view is slightly smaller than the first base 1a is bonded to the lower surface of the first base 1a. Thus, the plurality of first through holes 1d may be sealed together, or the second base 1b may be sealed with the plurality of first through holes 1d as in the example shown in FIG. 4B. A plurality of first through-holes 1d may be sealed in a plurality larger than each of the plurality of first through-holes 1d. In addition, it is preferable that the second base 1b is small as described above, since the generated thermal stress is small when there is a difference in thermal expansion coefficient between the first base 1a and the first base 1a. When all the signal terminals 5 of the electronic component mounting package 15 are fixed to one second base body 1b, the relative relationship between the signal terminals 5 when the first base body 1a and the second base body 1b are joined. The position can be accurately determined, and alignment between the plurality of first through holes 1d and the plurality of second through holes 1f (and the plurality of signal terminals 5 fixed in the second through holes 1f) is possible. Since it can be performed in a lump, the electronic component mounting package 15 with high assembly accuracy can be obtained efficiently.

第２の基体１ｂの厚みは0.5ｍｍ以上が好ましい。厚みが0.5ｍｍ未満の場合は、外部からの応力によって変形しやすくなり、封止材３による気密性を保ち難くなる。また、厚みが１ｍｍを超えると、第１の基体１ａと接合して得られる電子部品搭載用パッケージ15および電子装置の厚みが不要に厚いものとなり、小型化し難くなるので、第２の基体１ｂの厚みは１ｍｍ以下であるのが好ましい。   The thickness of the second substrate 1b is preferably 0.5 mm or more. When the thickness is less than 0.5 mm, it is likely to be deformed by an external stress, and it is difficult to maintain the airtightness by the sealing material 3. On the other hand, if the thickness exceeds 1 mm, the electronic component mounting package 15 and the electronic device obtained by bonding to the first base 1a become unnecessarily thick and difficult to miniaturize. The thickness is preferably 1 mm or less.

第２の基体１ｂは、信号端子５の固定用として、上面から下面にかけて形成された直径が0.53〜2.65ｍｍの第２の貫通孔１ｆを有する。第２の基体１ｂの位置は、信号端子５固定用の第２の貫通孔１ｆが、信号端子５が通る第１の貫通孔１ｄと対応して同心円状に位置するように配置する。また、ＤＣ端子８の固定用の第２の貫通孔１ｆは、第１の基体１ａと第２の基体１ｂとを接合した際に、ＤＣ端子８が通る第１の貫通孔１ｄと平面視で重なる位置に、ＤＣ端子８と第２の貫通孔１ｆの内面との間に十分な厚み（0.2ｍｍ程度）
の封止材３が入る程度の大きさに形成すればよい。 The second base 1b has a second through hole 1f having a diameter of 0.53 to 2.65 mm formed from the upper surface to the lower surface for fixing the signal terminal 5. The position of the second base 1b is arranged so that the second through hole 1f for fixing the signal terminal 5 is concentrically positioned corresponding to the first through hole 1d through which the signal terminal 5 passes. Further, the second through hole 1f for fixing the DC terminal 8 is, in plan view, the first through hole 1d through which the DC terminal 8 passes when the first base 1a and the second base 1b are joined. A sufficient thickness (about 0.2 mm) between the DC terminal 8 and the inner surface of the second through hole 1f at the overlapping position.
What is necessary is just to form in the magnitude | size which can enter the sealing material 3 of this.

このような第２の基体１ｂは、封止材３の熱膨張係数に近いものまたはコストの安いものとして、例えば、Ｆｅ−Ｎｉ−Ｃｏ合金またはＦｅ−Ｎｉ合金等の金属から成るものが好ましい。例えば第２の基体１ｂがＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工または打ち抜き加工等の金属加工方法を施すことによって所定形状に製作される。その後または同時に、第２の貫通孔１ｆがドリル加工または金型による打ち抜き加工によって形成される。   Such a second substrate 1b is preferably made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy, for example, having a thermal expansion coefficient close to that of the sealing material 3 or having a low cost. For example, when the 2nd base | substrate 1b consists of a Fe-Ni-Co alloy, it manufactures to a defined shape by giving metal processing methods, such as a rolling process or stamping, to the ingot (lump) of this alloy. Thereafter or simultaneously, the second through hole 1f is formed by drilling or punching with a mold.

また、第２の基体１ｂは、第１の基体１ａと同様に、その側面に凹凸部が形成されていると、第２の基体１ｂの側面と、電子装置を取り付ける外部ハウジング部材２との接触箇所が大きいものとなり、電子部品６から発生する熱を効率よく外部に放散することができる電子部品搭載用パッケージ15となる。このように、第２の基体１ｂがその側面に凹凸部を有する場合は、切削加工することによって形成することができる。この場合、図２に示された例のように、電子装置を取り付ける外部ハウジング部材２の内側側面にも凹凸を設けると第２の基体１ｂの側面と、外部ハウジング部材２との接触箇所が更に大きいものとなり、電子部品６から発生する熱を効率よく外部に放散することができ好ましい。また、この凹凸部を第２の基体１ｂの側面に螺旋状に形成すると、凹凸部がめねじ状となって容易に電子装置を外部ハウジング部材２に取り付けることが可能となり好ましい。この場合、電子装置を取り付ける外部ハウジング部材２の内側側面にも螺旋状の凹凸を設けると更に電子装置を外部ハウジング部材２に取り付けることが容易となり好ましい。このように、第２の基体１ｂがその側面に螺旋状の凹凸部を有する場合は、切削加工することによって形成することができる。なお、凹凸部の凹部の深さは第１の基体１ａと同様に0.1〜１
ｍｍとするのがよい。これにより、良好に電子装置を外部ハウジング部材２に取り付けることが可能となり好ましい。 Similarly to the first base body 1a, the second base body 1b has an uneven portion formed on the side surface thereof, so that the side surface of the second base body 1b contacts the external housing member 2 to which the electronic device is attached. The location becomes large, and the electronic component mounting package 15 can efficiently dissipate the heat generated from the electronic component 6 to the outside. Thus, when the 2nd base | substrate 1b has an uneven | corrugated | grooved part in the side surface, it can form by cutting. In this case, as in the example shown in FIG. 2, if unevenness is also provided on the inner side surface of the external housing member 2 to which the electronic device is attached, the contact portion between the side surface of the second base 1 b and the outer housing member 2 is further increased. This is preferable because the heat generated from the electronic component 6 can be efficiently dissipated to the outside. In addition, it is preferable to form the concavo-convex portion in a spiral shape on the side surface of the second substrate 1b because the concavo-convex portion becomes a female screw shape and the electronic device can be easily attached to the external housing member 2. In this case, it is preferable to provide spiral irregularities on the inner side surface of the external housing member 2 to which the electronic device is attached, because it is easier to attach the electronic device to the external housing member 2. Thus, when the 2nd base | substrate 1b has a helical uneven | corrugated | grooved part in the side surface, it can form by cutting. The depth of the concave portion of the concave and convex portion is 0.1 to 1 as in the first base 1a.
It is good to set it as mm. As a result, it is possible to satisfactorily attach the electronic device to the outer housing member 2, which is preferable.

また、第２の基体１ｂの表面には第１の基体１ａと同様に、耐食性に優れ、ろう材との
濡れ性に優れた厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法によって順次被着させておくのがよい。これにより、第２の基体１ｂが酸化腐食するのを有効に防止することができるとともに、第２の基体１ｂを第１の基体１ａにろう付けにより良好に接合することができる。 Similarly to the first substrate 1a, the surface of the second substrate 1b has excellent corrosion resistance and wettability with the brazing material. The Ni layer has a thickness of 0.5 to 9 μm and the thickness is 0.5 to 5 μm. It is preferable to sequentially deposit the Au layer by a plating method. Thereby, it is possible to effectively prevent the second base body 1b from being oxidatively corroded and to favorably join the second base body 1b to the first base body 1a by brazing.

溝10の形成は、搭載される電子部品６で発生した熱による、第１の基体１ａと第２の基体１ｂとの間の熱応力を緩和するだけでなく、蓋体９の接合時の衝撃または接合後の熱応力を緩和したり、蓋体接合部１ｅで発生した熱を放散しやすくしたりするという効果もある。このような効果を奏するには、第１の基体１ａおよび第２の基体１ｂの少なくとも一方に形成されていればよい。また、蓋体９の接合時の熱によって第２の貫通孔１ｆ内の信号端子５の封止性が損なわれないようにするためのものでもあるので、第２の基体１ｂに溝10が形成される場合は、第２の基体１ｂの溝10は、第１の基体１ａとの接合部と第２の貫通孔１ｆとの間に形成するとよい。   The formation of the groove 10 not only relieves the thermal stress between the first base body 1a and the second base body 1b due to the heat generated in the electronic component 6 to be mounted, but also the impact when the lid body 9 is joined. Alternatively, there is an effect that the thermal stress after joining is relaxed or the heat generated at the lid joint part 1e is easily dissipated. In order to achieve such an effect, it may be formed on at least one of the first base 1a and the second base 1b. Moreover, since it is also for preventing the sealing performance of the signal terminal 5 in the 2nd through-hole 1f from being impaired by the heat | fever at the time of joining of the cover body 9, the groove | channel 10 is formed in the 2nd base | substrate 1b. In this case, the groove 10 of the second base 1b is preferably formed between the junction with the first base 1a and the second through hole 1f.

図５に示された例においては、第１の基体１ａと第２の基体１ｂとの接合部の内側の、第２の基体１ｂの主面だけに垂直な溝10が形成されているので、第１の基体１ａの搭載部１ｃから側面（外部）への熱伝導を妨げることがないので好ましい。第１の基体１ａと第２の基体１ｂとの間において熱膨張係数の差が大きい場合は、第１の基体１ａの下面の、第１の基体１ａと第２の基体１ｂとの接合部の内側に溝を形成してもよい。   In the example shown in FIG. 5, since the groove 10 perpendicular to only the main surface of the second base 1b inside the joint between the first base 1a and the second base 1b is formed, This is preferable because it does not hinder heat conduction from the mounting portion 1c of the first base 1a to the side surface (outside). When the difference in the thermal expansion coefficient between the first base 1a and the second base 1b is large, the joint portion between the first base 1a and the second base 1b on the lower surface of the first base 1a. A groove may be formed inside.

溝10は、第１の基体１ａと第２の基体１ｂとの間で熱膨張係数が異なる場合に熱応力の緩和のために、第１の基体１ａと第２の基体１ｂとの接合部に沿って全周にわたって形成されているのが好ましい。   The groove 10 is formed at the joint between the first base 1a and the second base 1b in order to relieve thermal stress when the thermal expansion coefficients are different between the first base 1a and the second base 1b. It is preferable that it is formed over the entire circumference along.

溝10の幅および深さは、この部分で熱応力を緩和したり、蓋体接合部１ｅで発生した熱を放散したりできるような寸法にすればよく、第１の基体１ａおよび第２の基体１ｂの材質に応じて設定すればよい。第１の基体１ａがＳＰＣ材で、第２の基体１ｂがＦｅ−Ｎｉ−Ｃｏ合金であって、図５に示された例のように第２の基体１ｂの主面に対して垂直に形成される場合は、溝10の深さを第１の基体１ａおよび第２の基体１ｂの厚みよりも0.1〜0.25ｍｍ小さい厚みとなるように、すなわち、溝10の底部の厚みが0.1〜0.25ｍｍとなるように形成すると、溝10の部分による応力緩和の効果が大きくなり、かつ気密性も高いので好ましい。溝10の底部の厚みが薄いほど応力緩和の効果は大きいが、溝10の底部の厚みが0.1ｍｍ未満となると、溝10の部分での変形が大きくなり、電子部品６を搭載して使用し
た際に、繰り返し熱応力が加わることで溝10の底部に亀裂が入って気密性が低くなりやすい。同様の理由から、溝10の断面形状は、底面と側面とがなす角部に丸みをつけた形状、またはＵ字形状が好ましい。 The width and depth of the groove 10 may be sized so that the thermal stress can be relaxed in this portion or the heat generated in the lid joint portion 1e can be dissipated. What is necessary is just to set according to the material of the base | substrate 1b. The first base 1a is an SPC material, the second base 1b is an Fe—Ni—Co alloy, and is formed perpendicular to the main surface of the second base 1b as in the example shown in FIG. In this case, the depth of the groove 10 is 0.1 to 0.25 mm smaller than the thickness of the first base 1a and the second base 1b, that is, the thickness of the bottom of the groove 10 is 0.1 to 0.25 mm. It is preferable to form so as to increase the effect of stress relaxation by the groove 10 and to have high airtightness. The thinner the bottom portion of the groove 10, the greater the stress relaxation effect. However, when the bottom portion of the groove 10 has a thickness of less than 0.1 mm, the deformation at the portion of the groove 10 increases, and the electronic component 6 is mounted and used. At this time, repeated thermal stress is likely to cause a crack at the bottom of the groove 10 to reduce hermeticity. For the same reason, the cross-sectional shape of the groove 10 is preferably a rounded corner portion formed by the bottom surface and the side surface, or a U-shape.

信号端子５およびＤＣ端子８は、Ｆｅ−Ｎｉ−Ｃｏ合金またはＦｅ−Ｎｉ合金等の金属から成り、例えば信号端子５がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工または打ち抜き加工等の金属加工方法を施すことによって、長さが1.5〜22ｍｍ、直径が0.1〜0.5ｍｍの線状に製作される。   The signal terminal 5 and the DC terminal 8 are made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, when the signal terminal 5 is made of an Fe—Ni—Co alloy, the ingot (lumb) of the alloy is used. By applying a metal processing method such as rolling or punching, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 0.5 mm is manufactured.

信号端子５およびＤＣ端子８は、少なくとも下端部が第２の基体１ｂの第２の貫通孔１ｆから１〜20ｍｍ程度突出するように封止材３を介して固定され、上端部は第１の基体１ａの第１の貫通孔１ｄから０〜２ｍｍ程度突出させる。   The signal terminal 5 and the DC terminal 8 are fixed via the sealing material 3 so that at least the lower end portion protrudes from the second through hole 1f of the second base 1b by about 1 to 20 mm, and the upper end portion is the first end portion. About 0 to 2 mm is projected from the first through hole 1d of the base 1a.

ＤＣ端子８は、グラウンド用のものであれば第２の基体１ｂの下面にろう材等を用いて接続してもよい。   The DC terminal 8 may be connected to the lower surface of the second base 1b using a brazing material or the like if it is for ground.

封止材３は、ガラスおよびセラミックスなどの無機材料から成り、信号端子５およびＤ
Ｃ端子８と第２の基体１ｂとの絶縁間隔を確保するとともに、信号端子５およびＤＣ端子８を第２の貫通孔１ｆに固定する機能を有する。このような封止材３の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材３の熱膨張係数および比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、信号端子５の外径が0.2ｍｍの場合であれば、エアー同軸となる第１の貫通孔１ｄの内径
を0.46ｍｍとし、第２の貫通孔１ｆの内径を1.75ｍｍとして、封止材３に比誘電率が6.8
であるものを用いればよい。あるいは信号端子５の外径が0.25ｍｍの場合であれば、第１の貫通孔１ｄの内径を0.57ｍｍとし、第２の貫通孔１ｆの内径を2.2ｍｍとして、封止材
３の比誘電率が6.8であるものを用いればよい。また、同じく信号端子５の外径が0.25ｍ
ｍの場合であれば、第２の貫通孔１ｆの内径を1.65ｍｍとして、封止材３の比誘電率が５であるものを用いてもよい。封止材３の比誘電率が４であれば、同じ外径0.25ｍｍの場合で、第２の貫通孔１ｆの内径を1.35ｍｍとすれば特性インピーダンスが50Ωとなる。 The sealing material 3 is made of an inorganic material such as glass and ceramics, and the signal terminals 5 and D
It has a function of securing an insulation interval between the C terminal 8 and the second base 1b and fixing the signal terminal 5 and the DC terminal 8 to the second through hole 1f. Examples of such a sealing material 3 include glass such as borosilicate glass and soda glass, and these glasses added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 3. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, if the outer diameter of the signal terminal 5 is 0.2 mm, the inner diameter of the first through hole 1d serving as the air coaxial is set to 0.46 mm, and the second through hole 1f The inner diameter is 1.75 mm, and the relative permittivity of the encapsulant 3 is 6.8.
What is necessary is just to use. Alternatively, if the outer diameter of the signal terminal 5 is 0.25 mm, the inner diameter of the first through hole 1d is 0.57 mm, the inner diameter of the second through hole 1f is 2.2 mm, and the relative dielectric constant of the sealing material 3 is set. What has a 6.8 is sufficient. Similarly, the outer diameter of the signal terminal 5 is 0.25 m.
In the case of m, the inner diameter of the second through hole 1f may be 1.65 mm, and the sealing material 3 having a relative dielectric constant of 5 may be used. If the relative permittivity of the sealing material 3 is 4, the characteristic impedance is 50Ω when the inner diameter of the second through hole 1f is 1.35 mm in the case of the same outer diameter of 0.25 mm.

封止材３の比誘電率が小さいほど、第２の貫通孔１ｆを小さくしてもインピーダンスを50Ωに整合することができるため、結果として第２の基体１ｂの上面に接合する第１の基体１ａの大きさの小型化に効果的であり、より小型の電子部品収納用パッケージとすることができる。   As the relative dielectric constant of the sealing material 3 is smaller, the impedance can be matched to 50Ω even if the second through-hole 1f is made smaller. As a result, the first substrate bonded to the upper surface of the second substrate 1b. This is effective for downsizing the size of 1a, and a smaller electronic component storage package can be obtained.

ＤＣ端子８を固定するための封止材３は、特にインピーダンスを考慮する必要はなく、気密に封止してＤＣ端子８を固定できるものであればよいので、信号端子５を固定するための封止材３と同じものでなくても構わない。信号端子５の固定と同時にＤＣ端子８の固定を行なうためには、信号端子５を固定するための封止材３と同じガラス、あるいは同程度の融点を有するガラスを用いるとよい。   The sealing material 3 for fixing the DC terminal 8 does not need to consider impedance in particular, and may be any material that can be hermetically sealed to fix the DC terminal 8. It may not be the same as the sealing material 3. In order to fix the DC terminal 8 simultaneously with the signal terminal 5, it is preferable to use the same glass as the sealing material 3 for fixing the signal terminal 5 or a glass having the same melting point.

封止材３がガラスから成る場合は、内径が信号端子５またはＤＣ端子８の外径よりも大きく、外径が第２の貫通孔１ｆの内径よりも小さい筒状になるように粉体プレス法または押し出し成形法等で成形されたガラスの封止材３を第２の貫通孔１ｆに挿入し、信号端子５またはＤＣ端子８をこの封止材３に挿通し、しかる後、所定の温度に加熱して封止材３を溶融させることによって、信号端子５またはＤＣ端子８が封止材３に埋め込まれるとともに第２の貫通孔１ｆに第２の基体１ｂと絶縁されて気密に固定される。信号端子５は、第２の貫通孔１ｆの中心に固定されることで良好な同軸伝送路となり、高周波信号を良好に伝送することができる。   When the sealing material 3 is made of glass, a powder press is used so that the inner diameter is larger than the outer diameter of the signal terminal 5 or the DC terminal 8 and the outer diameter is smaller than the inner diameter of the second through hole 1f. The glass sealing material 3 formed by the method or the extrusion molding method or the like is inserted into the second through-hole 1f, and the signal terminal 5 or the DC terminal 8 is inserted into the sealing material 3, and then a predetermined temperature is reached. When the sealing material 3 is melted by heating, the signal terminal 5 or the DC terminal 8 is embedded in the sealing material 3 and is insulated from the second base 1b and fixed in an airtight manner in the second through hole 1f. The The signal terminal 5 becomes a good coaxial transmission line by being fixed at the center of the second through hole 1f, and can transmit a high-frequency signal satisfactorily.

第１の基体１ａと第２の基体１ｂとの接合は、ろう材またははんだあるいはガラス等の、接合とともに気密に封止することが可能な接合材４を用いて行なえばよい。例えば、金（Ａｕ）80質量％−錫（Ｓｎ）20質量％、金（Ａｕ）88質量％−ゲルマニウム（Ｇｅ）12質量％または錫（Ｓｎ）96.5質量％−銀（Ａｇ）3.5質量％等の合金はんだを用いたはん
だ箔を接合面の形状に金型等で打ち抜いて作製した接合材４を第１の基体１ａと第２の基体１ｂそれぞれの接合面間に挟んで、窒素中で合金はんだの融点以上に加熱して冷却することで、第１の基体１ａと第２の基体１ｂとが接合される。ろう材としては例えば銀ろう材、ガラスとしては低融点ガラスを用いればよい。また、箔を用いる代わりに接合材４のペーストを接合面に塗布して加熱してもよい。 The first base 1a and the second base 1b may be joined using a joining material 4 that can be hermetically sealed together with the joining, such as brazing material, solder, or glass. For example, gold (Au) 80 mass%-tin (Sn) 20 mass%, gold (Au) 88 mass%-germanium (Ge) 12 mass%, tin (Sn) 96.5 mass%-silver (Ag) 3.5 mass%, etc. A joining material 4 produced by punching a solder foil using the above alloy solder into the shape of the joint surface with a mold or the like is sandwiched between the joint surfaces of the first base body 1a and the second base body 1b and alloyed in nitrogen. The first base 1a and the second base 1b are joined by heating and cooling above the melting point of the solder. For example, a silver brazing material may be used as the brazing material, and a low melting point glass may be used as the glass. Moreover, you may apply | coat and paste the paste of the joining material 4 on a joining surface instead of using foil.

第１の基体１ａの熱伝導率は第２の基体１ｂの熱伝導率よりも高いので、例えば、ＳＰＣ材から成る第１の基体１ａと、Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体１ｂとを用いた場合は、ＳＰＣ材の熱伝導率が80Ｗ／（ｍ・Ｋ）であり、Ｆｅ−Ｎｉ−Ｃｏ合金の熱伝導率が30Ｗ／（ｍ・Ｋ）であるので、熱伝導率の高い第１の基体１ａに電子部品６を搭載した電子装置は、その使用時に電子部品６が発する熱を熱伝導率の高い第１の基体１ａを
通して外部に良好に放熱することができるので、信頼性の高い電子装置となる。また、蓋体接合部１ｅで発生した熱は熱伝導率の大きい第１の基体１ａ内を伝導しやすく、熱伝導率の小さい第２の基体１ｂへは伝導し難くなり、この熱によって封止材３に割れまたは剥がれなどが生じることがなくなるので好ましい。図２，図３，図５および図６に示された例のように、第２の基体１ｂが外周部だけで第１の基体１ａに接合されている場合は、このような熱の第２の基体１ｂへの伝導経路が小さいので、封止材３の割れまたは剥がれなどがより生じ難くなる。 Since the thermal conductivity of the first substrate 1a is higher than that of the second substrate 1b, for example, the first substrate 1a made of an SPC material and the second substrate 1b made of an Fe—Ni—Co alloy. Is used, the thermal conductivity of the SPC material is 80 W / (m · K), and the thermal conductivity of the Fe—Ni—Co alloy is 30 W / (m · K). Since the electronic device in which the electronic component 6 is mounted on the high first base 1a can efficiently dissipate heat generated by the electronic component 6 to the outside through the first base 1a having high thermal conductivity, It becomes a highly electronic device. Further, the heat generated in the lid joint 1e is easily conducted in the first base 1a having a high thermal conductivity, and is difficult to conduct to the second base 1b having a low thermal conductivity. This is preferable because the material 3 is not cracked or peeled off. In the case where the second base 1b is joined to the first base 1a only at the outer peripheral portion as in the examples shown in FIGS. 2, 3, 5 and 6, the second of such heat is generated. Since the conduction path to the substrate 1b is small, cracking or peeling of the sealing material 3 is less likely to occur.

また、ＳＰＣ材から成る第１の基体１ａと、Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体１ｂとの組合せの場合は、Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体１ｂの熱膨張係数は４×10−６〜６×10−６／℃であるので、例えば、比誘電率が４と小さく、熱膨張係数が３×10−６／℃とＦｅ−Ｎｉ−Ｃｏ合金の熱膨張係数に近い、ＳｉＯ２が72質量％、Ｂ２Ｏ３が25質量％で残りはその他組成であるガラスが封止材３として好適である。封止材３の比誘電率が小さいので第２の貫通孔１ｆおよび第２の基体１ｂを小さくすることができ、電子部品搭載用パッケージ15を小型化することができる。このとき、第１の基体１ａも小さいものとなるが、第１の基体１ａに形成される第１の貫通孔１ｄは小さいものでよいので、搭載部１ｃ面積の第１の基体１ａの上面全体の面積に占める割合を高くすることができ、電子部品６に発生した熱を第１の基体１ａに効率よく伝えることができる。また、比誘電率の小さいガラスは、一般的に熱膨張係数が２×10−６〜５×10−６／℃と小さいので、ＳＰＣ材（熱膨張係数：10×10−６〜12×10−６／℃）に対して、比較的熱膨張係数の小さい（４×10−６〜６×10−６／℃）Ｆｅ−Ｎｉ−Ｃｏ合金を第２の基体１ｂとして用いれば、第２の貫通孔１ｆ内に充填しても、第２の基体１ｂとの熱膨張差によって剥がれたり、割れたりすることがない。本発明の実施形態における電子部品搭載用パッケージ15は、電子部品６が搭載される第１の基体１ａと、信号端子５が封止材３によって固定される第２の基体１ｂとを、それぞれに必要な特性を有する別々の材質にすることで、小型で信頼性に優れた電子装置が得られるものとなる。 In the case of the combination of the first base 1a made of SPC material and the second base 1b made of Fe—Ni—Co alloy, the thermal expansion coefficient of the second base 1b made of Fe—Ni—Co alloy. Is 4 × 10 −6 to 6 × 10 −6 / ° C., for example, the dielectric constant is as small as 4 and the thermal expansion coefficient is 3 × 10 −6 / ° C., which is the thermal expansion coefficient of the Fe—Ni—Co alloy. A glass having an SiO 2 content of 72 mass%, a B 2 O 3 content of 25 mass%, and the rest being the other composition is suitable as the sealing material 3. Since the relative permittivity of the sealing material 3 is small, the second through hole 1f and the second base 1b can be made small, and the electronic component mounting package 15 can be downsized. At this time, the first base 1a is also small, but since the first through hole 1d formed in the first base 1a may be small, the entire upper surface of the first base 1a having the area of the mounting portion 1c is sufficient. As a result, the heat generated in the electronic component 6 can be efficiently transferred to the first base 1a. In addition, since glass having a small relative dielectric constant generally has a small thermal expansion coefficient of 2 × 10 −6 to 5 × 10 −6 / ° C., SPC material (thermal expansion coefficient: 10 × 10 −6 to 12 × 10 −6 / ° C.), a Fe—Ni—Co alloy having a relatively small thermal expansion coefficient (4 × 10 −6 to 6 × 10 −6 / ° C.) is used as the second substrate 1b. Even if it fills in the through-hole 1f, it does not peel off or crack due to the difference in thermal expansion from the second base 1b. The electronic component mounting package 15 in the embodiment of the present invention includes a first base 1a on which the electronic component 6 is mounted and a second base 1b on which the signal terminal 5 is fixed by the sealing material 3, respectively. By using different materials having necessary characteristics, a small and highly reliable electronic device can be obtained.

第１の基体１ａの下面の搭載部１ｃに対向する部分から外周部にかけて第１の金属部材１ａよりも熱伝導率が高い接合材４を被着する場合、接合材４は、図６に示された例のように、第１の基体１ａの下面の全面に被着すると、搭載部１ｃに対向する部分から外周部への熱伝導経路が最大になり、より効率よく放熱できるので好ましい。また、第２の基体１ｂの上面と第１の基体１ａの下面とを全面で接合材４によって接合する場合には、第２の基体１ｂの貫通孔１ｆ、少なくとも信号端子５が固定される貫通孔１ｆと重なる部分を避けて第１の基体１ａの下面に接合材４を被着させ、封止材３と接合材４とが接しないようにするのが好ましい。このようにすると、接合材４が導電性のろう材である場合には第２の貫通孔１ｆ内の信号端子５と接合材４との間に浮遊容量が発生することを、また、接合材４がガラス等の誘電体である場合には第２の貫通孔１ｆ内の信号端子５と第１の基体１ａとの間の浮遊容量が大きくなることを抑えることができるので、浮遊容量によって特性インピーダンスが変動して信号の伝送特性が低下してしまうことがない。   When the bonding material 4 having higher thermal conductivity than that of the first metal member 1a is applied from the portion facing the mounting portion 1c on the lower surface of the first base 1a to the outer peripheral portion, the bonding material 4 is shown in FIG. As in the example described above, it is preferable to adhere to the entire lower surface of the first base 1a because the heat conduction path from the portion facing the mounting portion 1c to the outer peripheral portion is maximized and heat can be radiated more efficiently. When the upper surface of the second substrate 1b and the lower surface of the first substrate 1a are bonded all over by the bonding material 4, the through hole 1f of the second substrate 1b, at least the signal terminal 5 is fixed through. It is preferable that the bonding material 4 is adhered to the lower surface of the first base 1a so as not to overlap the hole 1f so that the sealing material 3 and the bonding material 4 do not contact each other. In this case, when the bonding material 4 is a conductive brazing material, stray capacitance is generated between the signal terminal 5 in the second through hole 1f and the bonding material 4, and the bonding material. When 4 is a dielectric material such as glass, it is possible to suppress an increase in the stray capacitance between the signal terminal 5 in the second through hole 1f and the first base 1a. The impedance does not fluctuate and the signal transmission characteristics do not deteriorate.

第１の金属部材１ａよりも熱伝導率が高い接合材４としては、例えば、第１の金属部材１ａがＳＰＣ材である場合には、熱伝導率の高い銀を主成分とする銀ろう、例えば、Ａｇ72質量％−Ｃｕ28質量％合金（熱伝導率：374Ｗ／（ｍ・Ｋ））が挙げられる。この銀ろ
うはＪＩＳ（日本工業規格）のＢＡｇ−８であるが、これ以外の銀ろうでもよく、また、必要に応じて融点および硬度を低下させるために１質量％〜10質量％程度のインジウム（Ｉｎ）を加えたものでもよい。なお、接合材４の熱膨張率は、市販のＴＭＡ（Thermo Mechanical Analysis）装置を用いてＪＩＳＫ７１９７‐１９９１に準じた測定方法により、接合材４をＪＩＳＫ７１９７‐１９９１に準ずる形状に加工して測定される。 As the bonding material 4 having a higher thermal conductivity than the first metal member 1a, for example, when the first metal member 1a is an SPC material, a silver solder containing silver having a high thermal conductivity as a main component, For example, an Ag 72 mass% -Cu 28 mass% alloy (thermal conductivity: 374 W / (m · K)) may be mentioned. This silver brazing is JIS (Japanese Industrial Standards) BAg-8, but other silver brazing may be used, and in order to reduce the melting point and hardness as required, indium of about 1% by mass to 10% by mass is used. (In) may be added. The thermal expansion coefficient of the bonding material 4 is measured by processing the bonding material 4 into a shape according to JISK7197-1991 using a commercially available TMA (Thermo Mechanical Analysis) apparatus according to a measurement method according to JISK7197-1991. .

このような本発明の実施形態における電子部品搭載用パッケージ15の搭載部１ｃに電子
部品６を搭載するとともに、第１の基体１ａの蓋体接合部１ｅに蓋体９を接合することにより、本発明の実施形態における電子装置となる。 The electronic component 6 is mounted on the mounting portion 1c of the electronic component mounting package 15 in the embodiment of the present invention, and the lid body 9 is joined to the lid joint portion 1e of the first base 1a. An electronic device according to an embodiment of the invention is provided.

電子部品６としては、ＬＤ（レーザーダイオード）またはＰＤ（フォトダイオ−ド）等の光半導体素子、あるいは半導体集積回路素子を含む半導体素子、あるいは水晶振動子または弾性表面波素子等の圧電素子、あるいは圧力センサー素子，容量素子，抵抗器等が挙げられる。   As the electronic component 6, an optical semiconductor element such as LD (laser diode) or PD (photodiode), a semiconductor element including a semiconductor integrated circuit element, a piezoelectric element such as a crystal resonator or a surface acoustic wave element, or A pressure sensor element, a capacitive element, a resistor, etc. are mentioned.

回路基板６ａおよび中継基板６ｂの絶縁基板は、酸化アルミニウム（アルミナ：Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体等のセラミックス絶縁材料等から成り、絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）またはシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状とし、これをドクターブレード法またはカレンダーロール法等によってシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することによって製作される。また、その後、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。 The insulating substrates of the circuit board 6a and the relay board 6b are made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body and an aluminum nitride (AlN) sintered body. In the case of an aluminum sintered body, first, an appropriate organic solvent and solvent are added and mixed to the raw material powder such as alumina (Al 2 O 3 ) or silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. Then, it is made into a mud shape and formed into a sheet shape by a doctor blade method or a calender roll method to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C. Thereafter, the main surface of the insulating substrate may be polished as necessary.

この絶縁基板の上面に配線導体を蒸着法およびフォトリソグラフィ法を用いて形成することで、回路基板６ａおよび中継基板６ｂとなる。なお、配線導体は、例えば密着金属層、拡散防止層および主導体層が順次積層された３層構造の導体層から成る。また、回路基板６ａおよび中継基板６ｂに形成される高周波信号の通る配線導体については、信号端子５の第２の貫通孔１ｆ部分と同様に、例えば特性インピーダンスを50Ωに整合させた線路とする。   By forming a wiring conductor on the upper surface of the insulating substrate using a vapor deposition method and a photolithography method, the circuit substrate 6a and the relay substrate 6b are obtained. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated. In addition, the wiring conductor through which the high-frequency signal is formed on the circuit board 6a and the relay board 6b is a line whose characteristic impedance is matched to 50Ω, for example, similarly to the second through hole 1f portion of the signal terminal 5.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金，窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうち少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ程度が
好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向があり、0.2μｍを超えると、成膜時の内部応力によって密着金
属層が絶縁基板から剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that at least one kind of metal having a coefficient of thermal expansion close to that of ceramics, such as a Cr) alloy and tantalum nitride (Ta 2 N), and the thickness thereof is preferably about 0.01 to 0.2 μm. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. If the thickness exceeds 0.2 μm, the adhesion metal layer is insulated by the internal stress during film formation. It tends to become easy to peel off.

また、拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金，Ｔｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、１μｍを超えると、成膜時の内部応力によって拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は絶縁基板４との密着性が良好なため、密着金属層を省くことも可能である。   In addition, the diffusion preventing layer is made of platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, from the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer. It is preferably made of at least one metal having good thermal conductivity such as Ti—W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion preventing layer is less than 0.05 μm, defects such as pinholes tend to be generated and it becomes difficult to perform the function as the diffusion preventing layer. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion preventing layer, the Ni—Cr alloy has good adhesion to the insulating substrate 4, and therefore, the adhesion metal layer can be omitted.

さらに、主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉ，銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の
厚みが0.1μｍ未満では、電気抵抗が大きなものとなって回路基板６ａの配線導体に要求
される電気抵抗を満足できなくなる傾向があり、５μｍを超えると、成膜時の内部応力によって主導体層が拡散防止層から剥離し易く成る傾向がある。なお、Ａｕは貴金属で高価であることから、低コスト化の点でなるべく薄く形成することが好ましい。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。 Furthermore, the main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance becomes large and the electric resistance required for the wiring conductor of the circuit board 6a tends not to be satisfied. Therefore, the main conductor layer tends to be easily separated from the diffusion preventing layer. Since Au is a noble metal and expensive, it is preferably formed as thin as possible in terms of cost reduction. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

図１に示された例のような場合は、例えば、回路基板６ａおよび中継基板６ｂは、下面の接地導体層の表面に、200〜400℃の融点を有する半田または金（Ａｕ）−錫（Ｓｎ）等の低融点ろう材を、スクリーン印刷法を用いてろう材ペーストを印刷したり、フォトリソグラフィ法によって低融点ろう材膜を形成したり、低融点ろう材のプリフォームを配置したりして、200〜400℃の温度で加熱することによって第１の基体１ａに固定される。そして、電子部品６は、搭載部１ｃに接合された回路基板６ａに200〜400℃の融点を有するＡｕ−Ｓｎ等のろう材によってろう付けされて固定され、その電極をボンディングワイヤ７を介して回路基板６ａの配線導体に接続してこの配線導体と信号端子５とをボンディングワイヤ７で接続することによって信号端子５に電気的に接続される。また、例えば、回路基板６ａを第１の基体１ａ上に搭載した後に電子部品６を回路基板６ａ上に搭載する場合は、回路基板６ａの固定には金−錫（Ａｕ−Ｓｎ）合金または金−ゲルマニウム（Ａｕ−Ｇｅ）合金をろう材として用い、電子部品６の固定には、これらより融点の低い錫−銀（Ｓｎ−Ａｇ）合金または錫−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）合金のろう材、または融点より低い温度で硬化可能なＡｇエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品６を回路基板６ａ上に搭載した後に回路基板６ａを第１の基体１ａ上に搭載してもよく、その場合は上記とは逆に、回路基板６ａを第１の基体１ａ上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板６ａ上または第１の基体１ａの搭載部１ｃ上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   In the case of the example shown in FIG. 1, for example, the circuit board 6 a and the relay board 6 b are solder or gold (Au) -tin (melting point of 200 to 400 ° C.) on the surface of the ground conductor layer on the lower surface. Sn) or other low melting point brazing material is printed on the brazing material paste using a screen printing method, a low melting point brazing material film is formed by photolithography, or a low melting point brazing material preform is placed. And it fixes to the 1st base | substrate 1a by heating at the temperature of 200-400 degreeC. The electronic component 6 is fixed to the circuit board 6a bonded to the mounting portion 1c by brazing with a brazing material such as Au—Sn having a melting point of 200 to 400 ° C., and the electrode is fixed via the bonding wire 7. By connecting to the wiring conductor of the circuit board 6 a and connecting the wiring conductor and the signal terminal 5 with the bonding wire 7, the signal terminal 5 is electrically connected. For example, when the electronic component 6 is mounted on the circuit board 6a after the circuit board 6a is mounted on the first base 1a, a gold-tin (Au-Sn) alloy or gold is used for fixing the circuit board 6a. -A germanium (Au-Ge) alloy is used as a brazing material, and for fixing the electronic component 6, a tin-silver (Sn-Ag) alloy or a tin-silver-copper (Sn-Ag-Cu) alloy having a lower melting point than these An adhesive made of a resin such as Ag epoxy that can be cured at a temperature lower than the melting point of the brazing material may be used. In addition, the circuit board 6a may be mounted on the first base 1a after the electronic component 6 is mounted on the circuit board 6a. In this case, the circuit board 6a is mounted on the first base 1a. What is necessary is just to make lower the melting point of the brazing material used when mounting on the board. In either case, a brazing paste is printed on the circuit board 6a or the mounting portion 1c of the first base 1a using a known screen printing method, or a brazing material layer is formed by a photolithography method. Or a low melting point brazing preform may be placed.

高出力のＬＤ素子を電子部品６として搭載する場合は、電子部品６をより効果的に冷却して、電子部品６の温度変化によって特性が変化しないように、図１および図２に示された例のように、温度制御素子11を電子部品搭載用パッケージ15の搭載部１ｃ上に搭載して、その上に電子部品６を搭載すればよい。搭載の方法は、上記と同様に、低融点ろう材によって固定すればよい。なお、図１、図２ではＬＤ素子からの出力を反射鏡13で上方に反射させる例を示したが、温度制御素子11上にＬ型の台座を形成し、ＬＤ素子から直接上方に出力させてもかまわない。   When a high-power LD element is mounted as the electronic component 6, the electronic component 6 is more effectively cooled, and the characteristics are not changed by the temperature change of the electronic component 6, as shown in FIGS. 1 and 2. As in the example, the temperature control element 11 may be mounted on the mounting portion 1c of the electronic component mounting package 15, and the electronic component 6 may be mounted thereon. The mounting method may be fixed by a low melting point brazing material as described above. 1 and 2 show an example in which the output from the LD element is reflected upward by the reflecting mirror 13, but an L-shaped pedestal is formed on the temperature control element 11 and directly output upward from the LD element. It doesn't matter.

蓋体９は、平面視で第１の基体１ａの上面の外周領域の蓋体接合部１ｅの形状に沿った外形で、第１の基体１ａの上面の搭載部１ｃに搭載された電子部品６を覆うような空間を有する形状のものである。電子部品６と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 9 has an outer shape that conforms to the shape of the lid joint portion 1e in the outer peripheral area of the upper surface of the first base body 1a in plan view, and the electronic component 6 mounted on the mounting portion 1c on the upper surface of the first base body 1a. It is a thing of the shape which has a space which covers. A window that transmits light may be provided in a portion facing the electronic component 6, or an optical fiber and an optical isolator for preventing return light may be joined in place of or in addition to the window.

蓋体９は、Ｆｅ−Ｎｉ−Ｃｏ合金またはＦｅ−Ｎｉ合金、Ｆｅ−Ｍｎ合金等の金属から成り、これらの板材にプレス加工または打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体９は、第１の基体１ａの材料と同程度の熱膨張係数を有するものが好ましく、第１の基体１ａの材料と同じものを用いるのがより好ましい。蓋体９が窓を有する場合は、電子部品６と対向する部分に孔を設けたものに、平板状またはレンズ状のガラス製の窓部材を低融点ガラスなどによって接合する。   The lid body 9 is made of a metal such as Fe—Ni—Co alloy, Fe—Ni alloy, or Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal working method such as press working or punching. . The lid 9 preferably has the same thermal expansion coefficient as the material of the first base 1a, and more preferably the same as the material of the first base 1a. When the lid 9 has a window, a plate-like or lens-like glass window member is joined to the one provided with a hole in the portion facing the electronic component 6 with a low melting glass or the like.

蓋体９の第１の基体１ａの蓋体接合部１ｅへの接合は、シーム溶接またはＹＡＧレーザー溶接等の溶接またはＡｕ−Ｓｎろう材等のろう材によるろう付け等のろう接によって行なわれる。   The lid 9 is joined to the lid joint 1e of the first base body 1a by welding such as seam welding or YAG laser welding, or brazing such as brazing with a brazing material such as an Au-Sn brazing material.

１・・・・・基体
１ａ・・・・第１の基体
１ｂ・・・・第２の基体
１ｃ・・・・搭載部
１ｄ・・・・第１の貫通孔
１ｅ・・・・蓋体接合部
１ｆ・・・・第２の貫通孔
２・・・・・外部ハウジング部材
３・・・・・封止材
４・・・・・接合材
５・・・・・信号端子
６・・・・・電子部品
６ａ・・・・回路基板
６ｂ・・・・中継基板
７・・・・・ボンディングワイヤ
８・・・・・ＤＣ端子
９・・・・・蓋体
10・・・・・溝
11・・・・・温度制御素子
12・・・・・ＰＤ素子
13・・・・・反射鏡
14・・・・・温度モニタ素子
15・・・・・電子部品搭載用パッケージ DESCRIPTION OF SYMBOLS 1 ... Base 1a ... 1st base 1b ... 2nd base 1c ... Mounting part 1d ... 1st through-hole 1e ... Lid joining Part 1f... 2nd through hole 2... External housing member 3... Sealing material 4... Bonding material 5.・ Electronic parts 6a ・ ・ ・ ・ Circuit board 6b ・ ・ ・ ・ ・ ・ Relay board 7 ・ ・ ・ Bonding wire 8 ・ ・ ・ DC terminal 9 ・ ・ ・ Cover body
10 ... Groove
11 ... Temperature control element
12 ... PD element
13 ... Reflector
14 ... Temperature monitor element
15 ・ ・ ・ ・ ・ Electronic component mounting package

Claims (6)

上面および下面を有しており、前記上面に設けられた電子部品の搭載部と前記上面から前記下面にかけて設けられた貫通孔とを含む基体と、
前記基体に封止材により固定されているとともに前記貫通孔内を通っており、前記基体の前記上面から上方へ突出している上端と前記基体の前記下面から下方へ突出している下端とを有しており、前記電子部品が電気的に接続される端子とを備えており、
前記基体の側面には、凹凸部が形成されていることを特徴とする電子部品搭載用パッケージ。 A base including an upper surface and a lower surface, the electronic component mounting portion provided on the upper surface, and a through hole provided from the upper surface to the lower surface;
An upper end fixed to the base by a sealing material and passing through the through-hole, and protruding upward from the upper surface of the base and a lower end protruding downward from the lower surface of the base And a terminal to which the electronic component is electrically connected,
An electronic component mounting package, wherein a concave and convex portion is formed on a side surface of the base. 前記基体は、第１の基体と第２の基体とを有しており、第１の基体は第２の基体の上面に配置されていることを特徴とする請求項１記載の電子部品搭載用パッケージ。   2. The electronic component mounting device according to claim 1, wherein the base body includes a first base body and a second base body, and the first base body is disposed on an upper surface of the second base body. package. 前記凹凸部は、少なくとも第１の基体または第２の基体のどちらか一方の側面に形成されていることを特徴とする請求項２記載の電子部品搭載用パッケージ。   3. The electronic component mounting package according to claim 2, wherein the uneven portion is formed on at least one side surface of the first base or the second base. 前記第１の基体の外形寸法が前記第２の基体の外形寸法よりも大きいことを特徴とする請求項２または請求項３記載の電子部品搭載用パッケージ。   4. The electronic component mounting package according to claim 2, wherein an outer dimension of the first base is larger than an outer dimension of the second base. 請求項１記載の電子部品搭載用パッケージと、該電子部品搭載用パッケージの前記搭載部に搭載された電子部品と、前記基体の上面に接合され、前記電子部品および前記貫通孔を覆う蓋体とを備えることを特徴とする電子装置。   The electronic component mounting package according to claim 1, an electronic component mounted on the mounting portion of the electronic component mounting package, a lid body that is bonded to an upper surface of the base and covers the electronic component and the through hole; An electronic device comprising: 前記電子部品と前記搭載部との間に設けられた温度制御素子をさらに備えることを特徴とする請求項５記載の電子装置。   The electronic device according to claim 5, further comprising a temperature control element provided between the electronic component and the mounting portion.
JP2012135936A 2012-06-15 2012-06-15 Package for mounting electronic component and electronic device using the same Pending JP2014003076A (en)

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