JP5460089B2 - Electronic component mounting package and electronic device using the same - Google Patents

Electronic component mounting package and electronic device using the same Download PDF

Info

Publication number
JP5460089B2
JP5460089B2 JP2009067512A JP2009067512A JP5460089B2 JP 5460089 B2 JP5460089 B2 JP 5460089B2 JP 2009067512 A JP2009067512 A JP 2009067512A JP 2009067512 A JP2009067512 A JP 2009067512A JP 5460089 B2 JP5460089 B2 JP 5460089B2
Authority
JP
Japan
Prior art keywords
base
hole
electronic component
lid
signal terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009067512A
Other languages
Japanese (ja)
Other versions
JP2010010658A (en
Inventor
雅彦 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2009067512A priority Critical patent/JP5460089B2/en
Publication of JP2010010658A publication Critical patent/JP2010010658A/en
Application granted granted Critical
Publication of JP5460089B2 publication Critical patent/JP5460089B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)

Description

本発明は、光通信分野等に用いられる光半導体素子等の電子部品を搭載して収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for mounting and storing electronic components such as optical semiconductor elements used in the field of optical communication and the like, and an electronic apparatus using the same.

近年、40ｋｍ以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量な情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題であるとして研究開発されている。   In recent years, the demand for high-speed communication at a transmission distance of 40 km or less has been increasing rapidly, and research and development on high-speed and large-capacity information transmission is underway. In particular, increasing speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices has been attracting attention, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity It has been researched and developed as being.

従来の半導体装置に代表される電子装置の光出力は0.2〜0.5ｍＷ程度であり、電子部品として用いられる半導体素子の駆動電力は５ｍＷ程度であった。しかし、より大出力の半導体装置では、光出力が１ｍＷのレベルになってきており、また、半導体素子の駆動電力も10ｍＷ以上が要求されている。さらに、従来の半導体装置による伝送容量は2.5〜10Ｇｂｐｓ（Giga bit per second）程度であったが、近年では25〜40Ｇｂｐｓ程度まで向上してきており、半導体装置をより高出力化させ、高速化させることが要求されている。   The optical output of an electronic device typified by a conventional semiconductor device is about 0.2 to 0.5 mW, and the driving power of a semiconductor element used as an electronic component is about 5 mW. However, in a semiconductor device having a higher output, the optical output has become a level of 1 mW, and the driving power of the semiconductor element is required to be 10 mW or more. Furthermore, the transmission capacity of the conventional semiconductor device was about 2.5 to 10 Gbps (Giga bit per second). However, in recent years, the transmission capacity has been improved to about 25 to 40 Gbps. Is required.

従来の光通信装置に用いられているＬＤ（Laser Diode：レーザダイオード）やＰＤ（Photo Diode：フォトダイオ−ド）等の光半導体素子を含む電子部品を搭載する電子部品搭載用パッケージおよびこれを用いた電子装置を図11に断面図で示す。   Electronic component mounting package for mounting electronic components including optical semiconductor elements such as LDs (Laser Diodes) and PDs (Photo Diodes) used in conventional optical communication devices and the like FIG. 11 shows a cross-sectional view of the electronic device.

従来の電子部品搭載用パッケージは、上面に電子部品26の搭載部21ａを有する鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金や鉄（Ｆｅ）−マンガン（Ｍｎ）合金等の金属から成る円板状の基体21と、基体21の上面から下面に形成された直径が0.5〜２ｍｍの貫通孔21ｂの中心部に挿通されるとともに、少なくとも下端部が貫通孔21ｂから突出するように封止材23を介して固定された信号端子25とを具備しているものであった。信号端子25の固定はホウケイ酸等を主成分とする絶縁ガラスから成る封止材23を介して行なわれ、封止材23によって基体21と信号端子25とが電気的に絶縁されている。また、基体21の下面には、２つの貫通孔21ｂ・21ｂの間に接地端子29が接続されている。この電子部品搭載用パッケージの搭載部21ａに必要に応じて回路基板26ａを介して電子部品26を搭載し、電子部品搭載用パッケージの信号端子25の上端部と電子部品26の端子とを回路基板26ａを介して電気的に接続し、基体21の上面の外周領域に、電子部品26を覆うようにＦｅ−Ｎｉ−Ｃｏ合金等の金属から成る蓋体29をＹＡＧレーザ溶接，シーム溶接等の溶接またはろう接により接合して気密封止することにより、電子装置としていた。また、この蓋体29の電子部品26と対向する部分に光ファイバを固定したり、電子部品26と対向する部分に光を透過させる窓を設けたりすることもある（例えば、特許文献１を参照。）。   The conventional electronic component mounting package is made of a metal such as an iron (Fe) -nickel (Ni) -cobalt (Co) alloy or an iron (Fe) -manganese (Mn) alloy having a mounting portion 21a for the electronic component 26 on the upper surface. The disc-shaped base 21 and the base 21 are inserted in the center of a through hole 21b having a diameter of 0.5 to 2 mm formed from the upper surface to the lower surface, and sealed so that at least the lower end protrudes from the through hole 21b. And a signal terminal 25 fixed via a stopper 23. The signal terminal 25 is fixed through a sealing material 23 made of insulating glass whose main component is borosilicate or the like, and the base 21 and the signal terminal 25 are electrically insulated by the sealing material 23. A ground terminal 29 is connected to the lower surface of the base 21 between the two through holes 21b and 21b. If necessary, the electronic component 26 is mounted on the mounting portion 21a of the electronic component mounting package via the circuit board 26a, and the upper end of the signal terminal 25 and the terminal of the electronic component 26 of the electronic component mounting package are connected to the circuit board. A lid 29 made of a metal such as an Fe-Ni-Co alloy is welded to the outer peripheral region of the upper surface of the base 21 so as to cover the electronic component 26, such as YAG laser welding or seam welding. Or it was set as the electronic device by joining by brazing and airtightly sealing. In addition, an optical fiber may be fixed to a portion of the lid 29 that faces the electronic component 26, or a window that transmits light may be provided in a portion that faces the electronic component 26 (see, for example, Patent Document 1). .)

また、伝送速度が10Ｇｂｐｓ以下の場合は、周辺部品のインピーダンスは25Ωで形成されていたが、高周波化が進むにつれ、周辺部品のインピーダンスが50Ωで形成されるようになっているため、高周波の通る信号端子25のインピーダンスを50Ωにマッチングさせようとすると、貫通孔21ｂの径が、インピーダンスを従来の25Ωで設計した場合に対してほぼ２倍となることがわかっている。   When the transmission speed is 10 Gbps or less, the impedance of the peripheral component is 25 Ω. However, as the frequency increases, the impedance of the peripheral component is 50 Ω. It has been found that if the impedance of the signal terminal 25 is matched with 50Ω, the diameter of the through hole 21b is almost twice that when the impedance is designed with the conventional 25Ω.

特開平８−130266号公報JP-A-8-130266

しかしながら、25Ｇｂｐｓ以上の高周波信号で駆動される電子部品26を搭載し、インピーダンスを50Ωにマッチングさせるために信号端子25の通る貫通孔21ｂの径を大きくすると、蓋体29をＹＡＧレーザ溶接，シーム溶接またはろう付け等の接合方法で気密封着した場合に、気密不良が発生しやすくなるという問題点があった。   However, when the electronic component 26 driven by a high frequency signal of 25 Gbps or more is mounted and the diameter of the through hole 21b through which the signal terminal 25 passes is increased in order to match the impedance to 50Ω, the lid 29 is YAG laser welded and seam welded. In addition, there is a problem in that airtight defects are likely to occur when airtightly sealed by a joining method such as brazing.

これは、貫通孔11ｃの径が大きくなることで蓋体接合部21ｃと貫通孔21ｂとの距離が近付いたので、例えばシーム溶接の場合は主に機械的衝撃が、ろう付けの場合は基体21と蓋体29との熱膨張係数の差による熱応力が蓋体接合部21ｃに加わり、これが貫通孔21ｂへ伝わることにより、貫通孔21ｂ内の封止材23にクラックが発生したり、貫通孔21ｂの内壁と封止材23との間や信号端子25と封止材23との間に剥がれが発生したりしてしまうためであると考えられる。また、シーム溶接やＹＡＧレーザ溶接の場合は急激に高温に加熱され、接合部21ｃから貫通孔21ｂまでの距離が短いとその間で熱が拡散しないので貫通孔21ｂの内面もすぐに高温になるのに対して、金属製の基体21に対して熱伝導率の小さいガラス製の封止材23は温度が上昇するのに時間がかかり、両者の間で熱膨張差が生じて、貫通孔21ｂの内壁と封止材23との間や信号端子25と封止材23との間に剥がれが発生してしまうと考えられる。   This is because the distance between the lid joint portion 21c and the through-hole 21b is approached by increasing the diameter of the through-hole 11c. For example, in the case of seam welding, a mechanical impact is mainly produced, and in the case of brazing, the base 21 The thermal stress due to the difference in the thermal expansion coefficient between the lid body 29 and the lid body 29 is applied to the lid joint portion 21c, which is transmitted to the through hole 21b, thereby causing cracks in the sealing material 23 in the through hole 21b, This is probably because peeling occurs between the inner wall of 21 b and the sealing material 23 or between the signal terminal 25 and the sealing material 23. In the case of seam welding or YAG laser welding, if the distance from the joint 21c to the through hole 21b is short, the heat does not diffuse between them, so the inner surface of the through hole 21b also quickly becomes high. On the other hand, the glass sealing material 23 having a low thermal conductivity with respect to the metal base 21 takes time to rise in temperature, and a difference in thermal expansion occurs between the two, so that the through hole 21b It is considered that peeling occurs between the inner wall and the sealing material 23 or between the signal terminal 25 and the sealing material 23.

本発明はこのような従来の問題点に鑑みて完成されたものであり、その目的は、特性インピーダンスを大きくして高周波信号を伝送するために信号端子を固定する貫通孔を大きくしても、気密不良が発生しない電子部品搭載用パッケージおよびそれを用いた電子装置を提供することにある。   The present invention has been completed in view of such conventional problems, and its purpose is to increase the characteristic impedance and increase the through hole for fixing the signal terminal in order to transmit a high frequency signal. An object of the present invention is to provide an electronic component mounting package that does not cause airtight defects and an electronic device using the same.

本発明の電子部品搭載用パッケージは、上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する第１の貫通孔を有する第１の基体と、外周部が前記第１の基体の下面に接合された、前記第１の貫通孔に対応して上面から下面にかけて貫通する第２の貫通孔を有する第２の基体と、前記第２の貫通孔に充填された封止材を貫通して固定され、一端が前記第１の貫通孔を通って前記第１の基体の上面から突出している信号端子とを具備しており、前記第１の基体および前記第２の基体の少なくとも一方は、前記第１の基体と前記第２の基体との接合部に沿った溝を有しており、前記第２の基体は、前記第１の基体の前記下面との間に空隙が設けられるように配置されているとともに、前記上面の前記外周部に設けられており前記第１の基体に接合された突出部を有していることを特徴とするものである。
The electronic component mounting package of the present invention has a lid joint portion for joining the lid body by welding or brazing to the outer peripheral region of the upper surface, and an electronic component mounting portion on the upper surface in the inner region of the lid joint portion. And a first base having a first through hole penetrating from the upper surface to the lower surface, and an outer peripheral portion joined to the lower surface of the first base, the upper surface corresponding to the first through hole from the upper surface to the lower surface And a second base having a second through hole penetrating through and a sealing material filled in the second through hole, and one end of the first base through the first through hole. And at least one of the first base and the second base along a joint portion between the first base and the second base. The second base is in front of the first base. Together are arranged to gap is provided between the lower surface, which is characterized by having a projecting portion and the bonded to the are arranged on the outer peripheral part the first base of the upper surface It is.

また、本発明の電子部品搭載用パッケージは、上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する第１の貫通孔を有する第１の基体と、外周部が前記第１の基体の下面に接合された、前記第１の貫通孔に対応して上面から下面にかけて貫通する第２の貫通孔を有する第２の基体と、前記第２の貫通孔に充填された封止材を貫通して固定され、一端が前記第１の貫通孔を通って前記第１の基体の上面から突出している信号端子とを具備しており、前記第１の基体および前記第２の基体の少なくとも一方は、前記第１の基体と前記第２の基体との接合部に沿った溝を有しており、前記第２の基体は、前記第１の基体の前記下面との間に空隙が設けられるように配置されており、前記溝は、前記第１の基体および前記第２の基体のそれぞれに設けられていることを特徴とするものである。 In addition, the electronic component mounting package of the present invention has a lid joint portion that joins the lid body by welding or brazing to the outer peripheral region of the upper surface, and an electronic component on the upper surface in the inner region of the lid joint portion. A first base body having a first through hole penetrating the mounting portion and from the upper surface to the lower surface, and an upper surface corresponding to the first through hole having an outer peripheral portion bonded to the lower surface of the first base body A second base having a second through-hole penetrating from the bottom surface to the lower surface and a sealing material filled in the second through-hole and fixed, and one end passing through the first through-hole A signal terminal protruding from the upper surface of the first base, and at least one of the first base and the second base is a joint between the first base and the second base And the second base has the first base. Of being arranged so that the gap is provided between the lower surface, the groove, is characterized in that provided in each of the first substrate and the second substrate.

また、本発明の電子部品搭載用パッケージは、前記溝は、前記突出部の側面に設けられていることを特徴とするものである。 The electronic component mounting package of the present invention is characterized in that the groove is provided on a side surface of the protruding portion .

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記蓋体接合部に蓋体を接合したことを特徴とするものである。   An electronic device according to the present invention is characterized in that an electronic component is mounted on the mounting portion of the electronic component mounting package according to any one of the above-described configurations, and a lid is bonded to the lid bonding portion. It is.

本発明の電子部品搭載用パッケージは、上面の外周領域に蓋体接合部を有する第１の基体と、外周部が第１の基体の下面に接合された、第１の貫通孔に対応して上面から下面にかけて貫通する第２の貫通孔を有する第２の基体と、第２の貫通孔に充填された封止材を貫通して固定され、一端が第１の貫通孔を通って第１の基体の上面から突出している信号端子とを具備することから、信号端子が固定される第２の貫通孔の径を大きくして蓋体を第１の基体の上面の外周領域の蓋体接合部に溶接またはろう接により接合したとしても、蓋体接合部で発生した熱は、主として蓋体接合部を有する第１の基体に拡散して外部に放出され、また、信号端子が固定される第２の貫通孔は、蓋体接合部を有する第１の基体とは別の第２の基体に形成され、蓋体接合部から離れているので、接合時の衝撃や接合後の熱応力が蓋体接合部と第２の貫通孔との間の基体によって緩和され、第２の貫通孔内の封止材にクラックが入ったり封止材と信号端子や第２の貫通孔の内壁面との間で剥がれが生じたりすることがなく、気密性が損なわれることのない高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   The electronic component mounting package of the present invention corresponds to a first base body having a lid joint portion in an outer peripheral region of the upper surface, and a first through hole in which the outer peripheral portion is bonded to the lower surface of the first base body. A second base having a second through-hole penetrating from the upper surface to the lower surface and a sealing material filled in the second through-hole are fixed through the first base and one end passes through the first through-hole. Since the signal terminal protrudes from the upper surface of the base body, the diameter of the second through hole to which the signal terminal is fixed is increased, and the cover body is joined to the outer peripheral area of the upper surface of the first base body. Even if it is joined to the part by welding or brazing, the heat generated at the lid joint part is diffused mainly to the first base body having the lid joint part and released to the outside, and the signal terminal is fixed. The second through hole is formed in a second base different from the first base having the lid joint portion, Since it is away from the body joint, the impact during joining and the thermal stress after joining are alleviated by the base between the lid joint and the second through hole, and the sealing material in the second through hole becomes It is possible to obtain a highly reliable electronic device that does not crack and does not peel off between the sealing material and the signal terminal or the inner wall surface of the second through-hole, and does not impair hermeticity. It becomes a package for mounting electronic components.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、第１の基体および第２の基体の少なくとも一方が、第１の基体と第２の基体との接合部に沿った溝を有する場合には、蓋体接合時の衝撃や接合後の熱応力が溝によって緩和されるとともに、蓋体接合部で発生した熱が放散しやすくなり、第２の貫通孔内の封止材にクラックが入ったり封止材と信号端子や第２の貫通孔の内壁面との間で剥がれが生じたりすることがなくなるので、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   According to the electronic component mounting package of the present invention, in the above configuration, at least one of the first base and the second base has a groove along the joint portion between the first base and the second base. In the case of having, the impact at the time of joining the lid body and the thermal stress after joining are eased by the groove, and the heat generated at the lid body joining portion is easily dissipated, and the sealing material in the second through hole is An electronic component mounting package that can provide a more reliable electronic device because there is no occurrence of cracks or peeling between the sealing material and the signal terminal or the inner wall surface of the second through-hole. It becomes.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、第１の基体が下面に凹部を有し、第２の基体が凹部内で第１の基体に接合されている場合には、電着機やシームウェルド装置等により蓋体接合部に電流を流して蓋体を接合する場合に、電流を第１の基体だけに流すことができるので、この電流により第１の基体と第２の基体との接合部を発熱させて接合材を再溶融させてしまうことがないため、電着機やシームウェルド装置等による、局所加熱が可能で生産性の高い接合方法を蓋体の接合に用いることができる、蓋体の接合方法の選択の自由度が大きい電子部品搭載用パッケージとなる。また、蓋体接合部と第２の貫通孔とがより離れることとなることで、蓋体接合時の衝撃や熱応力が第２の貫通孔内の封止材により加わり難くなるため、より高信頼性の半導体素子収納用パッケージとなる。   According to the electronic component mounting package of the present invention, in the above configuration, when the first base has a recess on the lower surface and the second base is joined to the first base within the recess. When the lid is joined by applying an electric current to the lid joint portion by using an electrodeposition machine or a seam weld apparatus, the current can be caused to flow only to the first base. No heat is generated at the joint with the base material 2 and the joining material is not re-melted. Therefore, a highly productive joining method using an electrodeposition machine or a seam weld apparatus is possible. The electronic component mounting package can be used for a large degree of freedom in selecting the lid joining method. In addition, since the lid joint portion and the second through hole are further away from each other, the impact and thermal stress at the time of lid joining are less likely to be applied by the sealing material in the second through hole. It becomes a reliable package for housing semiconductor elements.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、第１の貫通孔の内面と信号端子との間に絶縁性部材が配置されている場合には、第１の基体と第２の基体との間の熱膨張係数の相違により、第２の基体の第２の貫通孔に固定された信号端子と第１の基体の第１の貫通孔との位置がずれたとしても、間に絶縁性部材が配置されていることによって信号端子と第１の基体とが接触することがなく、絶縁性が保たれるので、第１の基体および第２の基体のそれぞれに、求められる特性を有する材料を選択することができ、より高信頼性の半導体素子収納用パッケージとなる。   According to the electronic component mounting package of the present invention, in the above configuration, when the insulating member is disposed between the inner surface of the first through hole and the signal terminal, Even if the position of the signal terminal fixed to the second through hole of the second base and the first through hole of the first base is shifted due to the difference in thermal expansion coefficient between the two bases, Since the insulating member is disposed between the signal terminal and the first base without contact, the insulating property is maintained, so that the first base and the second base are required. A material having characteristics can be selected, and a highly reliable package for housing a semiconductor element can be obtained.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの搭載部に電子部品を搭載するとともに、蓋体接合部に蓋体を接合したことから、信号端子が固定される第２の貫通孔の径が大きい場合であっても、外部との気密性を保つ上で重要な第２の貫通孔および第２の貫通孔内の封止材が蓋体接合部から離れていることにより、蓋体を第１の基体の上面の外周部に溶接またはろう接により接合したときの衝撃や、接合後の熱応力によって気密性が損なわれることがないので、気密性に優れた、高信頼性の電子装置となる。   In the electronic device according to the present invention, since the electronic component is mounted on the mounting portion of the electronic component mounting package according to any one of the above-described configurations and the lid is joined to the lid joint, the signal terminal is fixed. Even when the diameter of the second through hole is large, the second through hole and the sealing material in the second through hole, which are important for maintaining airtightness with the outside, are separated from the lid joint portion. As a result, the airtightness is not impaired by the impact when the lid is joined to the outer peripheral portion of the upper surface of the first base body by welding or brazing, and the thermal stress after joining. In addition, a highly reliable electronic device is obtained.

本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. （ａ）および（ｂ）は、いずれも本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す下面図である。(A) And (b) is a bottom view which shows another example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. （ａ）は図６の本発明の電子部品搭載用パッケージの第２の基体の例を示す下面図であり、（ｂ）は同様の第２の基体の他の例を示す下面図である。(A) is a bottom view showing an example of the second substrate of the electronic component mounting package of the present invention of FIG. 6, and (b) is a bottom view showing another example of the same second substrate. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。It is sectional drawing which shows another example of embodiment of the electronic component mounting package of this invention. 従来の電子部品搭載用パッケージの形態の一例を示す断面図である。It is sectional drawing which shows an example of the form of the conventional electronic component mounting package.

本発明の電子部品搭載用パッケージおよびそれを用いた電子装置について、添付の図面を参照しつつ詳細に説明する。   An electronic component mounting package and an electronic apparatus using the same according to the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図であり、図２は、図１におけるＡ−Ａ線で切断した断面の一例を示す断面図であり、図３は本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す下面図であり、図４〜図６，図８〜図10は、本発明の電子部品搭載用パッケージの実施の形態の他の一例を示す断面図である。図７（ａ）は、図６の本発明の電子部品搭載用パッケージの第２の基体の下面図であり、図７（ｂ）は同様の第２の基体の他の例を示す下面図である。   FIG. 1 is a perspective view showing an example of an embodiment of an electronic component mounting package according to the present invention, and FIG. 2 is a cross-sectional view showing an example of a cross section taken along line AA in FIG. 3 is a bottom view showing another example of the embodiment of the electronic component mounting package of the present invention. FIGS. 4 to 6 and FIGS. 8 to 10 show the embodiment of the electronic component mounting package of the present invention. It is sectional drawing which shows another example. FIG. 7A is a bottom view of the second substrate of the electronic component mounting package of the present invention of FIG. 6, and FIG. 7B is a bottom view showing another example of the same second substrate. is there.

図１〜図10において、１は第１の基体、１ａは搭載部、１ｂは第１の貫通孔、１ｃは蓋体接合部、１ｄは凹部、２は第２の基体、２ｂは第２の貫通孔、３は封止材、４は接合材、５は信号端子、６は電子部品、６ａは回路基板、７はボンディングワイヤ、８は接地端子、８ａは接地封止材、９は蓋体、10は溝、11は絶縁性部材である。   1 to 10, 1 is a first base, 1a is a mounting portion, 1b is a first through hole, 1c is a lid joint portion, 1d is a recess, 2 is a second base, and 2b is a second base Through hole, 3 is a sealing material, 4 is a bonding material, 5 is a signal terminal, 6 is an electronic component, 6a is a circuit board, 7 is a bonding wire, 8 is a grounding terminal, 8a is a grounding sealing material, and 9 is a lid , 10 is a groove, and 11 is an insulating member.

図１に示す例では、第１の基体１の上面から突出した突出部を搭載部１ａとして、その側面に回路基板６ａを介して電子部品６が搭載されている。電子部品６はボンディングワイヤ７で回路基板６ａ上の配線に電気的に接続されている。さらに、信号端子５・５の第１の基体１側の上端部と回路基板６ａ上の配線とは、ろう材等の接合材で電気的に接続されている。これによって、信号端子５は電子部品６と外部電気回路（図示せず）との間の入出力信号を伝送する伝送路として機能する。さらに、図２、図４〜図６，図８〜図10に示すように、破線で示すような蓋体９を溶接またはろう接により蓋体接合部１ｃに接合することにより、本発明の電子装置が基本的に構成される。なお、図１〜図10に示す例では、１個の電子部品６を、回路基板６ａを介して第１の基体１の搭載部１ａの上に搭載しているが、複数の電子部品６を搭載してもよいし、回路基板６ａを介さずに第１の基体１の搭載部１ａの上に直接搭載し、ボンディングワイヤ７で信号端子５・５に接続してもよい。また、信号端子５の数も、電子部品６の数や電子部品６の電極の数に応じて２本より多くても構わない。   In the example shown in FIG. 1, a protruding portion protruding from the upper surface of the first base 1 is used as a mounting portion 1a, and an electronic component 6 is mounted on a side surface of the first substrate 1 via a circuit board 6a. The electronic component 6 is electrically connected to the wiring on the circuit board 6a by a bonding wire 7. Further, the upper ends of the signal terminals 5 and 5 on the first base 1 side and the wiring on the circuit board 6a are electrically connected by a bonding material such as a brazing material. Thereby, the signal terminal 5 functions as a transmission path for transmitting an input / output signal between the electronic component 6 and an external electric circuit (not shown). Further, as shown in FIGS. 2, 4 to 6, and 8 to 10, the lid body 9 as indicated by a broken line is joined to the lid joint portion 1 c by welding or brazing, whereby the electronic device of the present invention is obtained. The device is basically constructed. In the example shown in FIGS. 1 to 10, one electronic component 6 is mounted on the mounting portion 1a of the first base 1 via the circuit board 6a. It may be mounted, or may be mounted directly on the mounting portion 1a of the first base 1 without passing through the circuit board 6a and connected to the signal terminals 5 and 5 by the bonding wires 7. Further, the number of signal terminals 5 may be more than two depending on the number of electronic components 6 and the number of electrodes of the electronic components 6.

本発明の電子部品搭載用パッケージは、上面の外周領域に溶接またはろう接により蓋体９を接合する蓋体接合部１ｃを有するとともに、この蓋体接合部１ｃの内側領域に、上面に電子部品６の搭載部１ａを有し、上面から下面にかけて貫通する第１の貫通孔１ｂを有する第１の基体１と、外周部が第１の基体１の下面に接合された、第１の貫通孔１ｂに対応して上面から下面にかけて貫通する第２の貫通孔２ｂを有する第２の基体２と、第２の貫通孔２ｂに充填された封止材３を貫通して固定され、一端が第１の貫通孔１ｂを通って第１の基体１の上面から突出している信号端子５とを具備することを特徴とするものである。   The electronic component mounting package of the present invention has a lid joint portion 1c that joins the lid body 9 by welding or brazing to the outer peripheral region of the top surface, and an electronic component on the top surface in an inner region of the lid joint portion 1c. A first base body 1 having a first through-hole 1b having six mounting portions 1a and penetrating from the upper surface to the lower surface, and a first through-hole whose outer peripheral portion is bonded to the lower surface of the first base body 1 Corresponding to 1b, the second base 2 having a second through-hole 2b penetrating from the upper surface to the lower surface and the sealing material 3 filled in the second through-hole 2b are fixed through, and one end is first And a signal terminal 5 protruding from the upper surface of the first base 1 through one through hole 1b.

このような構成により、信号端子５が固定される第２の貫通孔２ｂの径を大きくして蓋体９を第１の基体１の上面の外周領域の蓋体接合部１ｃに溶接またはろう接により接合したとしても、この接合で発生した熱は、主として蓋体接合部１ｃを有する第１の基体１に拡散して外部に放出される。また、信号端子５が固定される第２の貫通孔２ｂは、蓋体接合部１ｃを有する第１の基体１とは別の第２の基体２に形成されており、蓋体接合部１ｃから離れているので、第１の基体１への蓋体９の接合時の衝撃や接合後の熱応力が蓋体接合部１ｃと第２の貫通孔２ｂとの間の第１の基体１によって緩和され、第２の貫通孔２ｂ内の封止材３にクラックが入ったり、封止材３と信号端子５や第２の貫通孔２ｂの内壁面との間で剥がれが生じたりすることがない。これらの結果、気密性が損なわれることのない高信頼性の電子装置を得ることのできる電子部品搭載用パッケージとなる。   With such a configuration, the diameter of the second through hole 2b to which the signal terminal 5 is fixed is increased, and the lid body 9 is welded or brazed to the lid joint portion 1c in the outer peripheral area of the upper surface of the first base 1. Even if it joins by this, the heat | fever generate | occur | produced by this joining is mainly diffused in the 1st base | substrate 1 which has the cover body junction part 1c, and is discharge | released outside. Further, the second through hole 2b to which the signal terminal 5 is fixed is formed in the second base 2 different from the first base 1 having the lid joint 1c, and from the lid joint 1c. Since they are separated from each other, the impact at the time of joining the lid body 9 to the first base 1 and the thermal stress after joining are alleviated by the first base body 1 between the lid joint portion 1c and the second through-hole 2b. Thus, the sealing material 3 in the second through-hole 2b is not cracked, and no peeling occurs between the sealing material 3 and the signal terminal 5 or the inner wall surface of the second through-hole 2b. . As a result, an electronic component mounting package that can provide a highly reliable electronic device that does not impair hermeticity is obtained.

また、本発明の電子部品搭載用パッケージによれば、図４〜図７に示す例のように、上記構成において、第１の基体１および第２の基体２の少なくとも一方が、第１の基体１と第２の基体２との接合部に沿った溝10を有する場合には、蓋体９の接合時の衝撃や接合後の熱応力が溝10によって緩和されるとともに、蓋体接合部１ｃで発生した熱が放散しやすくなり、第２の貫通孔２ｂ内の封止材３にクラックが入ったり封止材３と信号端子５や第２の貫通孔２ｂの内壁面との間で剥がれが生じたりすることがなくなるので、より高信頼性の電子装置を得ることのできる電子部品搭載用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, as in the example shown in FIGS. 4 to 7, in the above configuration, at least one of the first base 1 and the second base 2 is the first base. In the case of having the groove 10 along the joint portion between the first body 2 and the second base body 2, the impact at the time of joining the lid body 9 and the thermal stress after joining are alleviated by the groove 10, and the lid body joint portion 1c. The heat generated in the above is easily dissipated, and the sealing material 3 in the second through hole 2b is cracked or peeled off between the sealing material 3 and the signal terminal 5 or the inner wall surface of the second through hole 2b. Therefore, the electronic component mounting package can provide a highly reliable electronic device.

また、本発明の電子部品搭載用パッケージによれば、図６に示す例のように、上記構成において、第１の基体１が下面に凹部１ｄを有し、第２の基体２が凹部１ｄ内で第１の基体１に接合されている場合には、電着機やシームウェルド装置等により蓋体接合部１ｃに電流を流して第１の基体１に蓋体９を接合する場合に、電流を第１の基体１だけに流すことができるので、この電流により第１の基体１と第２の基体２との接合部を発熱させて接合材４を再溶融させてしまうことがないため、電着機やシームウェルド装置等による、局所加熱が可能で生産性の高い接合方法を蓋体９の接合に用いることができる、蓋体９の接合方法の選択の自由度が大きい電子部品搭載用パッケージとなる。また、図６に示す例のように第１の基体１の凹部１ｄの側面下側と第２の基体２の側面下側とを接合した場合には、蓋体接合部１ｃと第２の貫通孔２ｂとがより離れることとなることで、蓋体９の接合時の衝撃や熱応力が第２の貫通孔２ｂ内の封止材３に、より加わり難くなるため、より高信頼性の半導体素子収納用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, as in the example shown in FIG. 6, in the above configuration, the first base 1 has the recess 1d on the lower surface, and the second base 2 is in the recess 1d. When the lid 9 is joined to the first base 1 by passing an electric current through the lid joint 1c by an electrodeposition machine, a seam weld apparatus or the like. Can flow only to the first base 1, so that the current does not cause the joint between the first base 1 and the second base 2 to generate heat and re-melt the bonding material 4. For mounting electronic parts with a high degree of freedom in selecting the joining method of the lid body 9, which can be used for joining the lid body 9 by using a highly productive joining method capable of local heating by an electrodeposition machine or a seam weld apparatus. It becomes a package. When the lower side surface of the concave portion 1d of the first base 1 and the lower side surface of the second base 2 are joined as in the example shown in FIG. 6, the lid joint 1c and the second penetration Since the holes 2b are further away from each other, an impact or thermal stress at the time of joining the lid body 9 is less likely to be applied to the sealing material 3 in the second through-hole 2b. It becomes an element storage package.

また、本発明の電子部品搭載用パッケージによれば、図８〜図10に示す例のように、上記構成において、第１の貫通孔１ｂの内面と信号端子５との間に絶縁性部材11が配置されている場合には、第１の基体１と第２の基体２との間の熱膨張係数の相違により、第２の基体２の第２の貫通孔２ｂに固定された信号端子５と第１の基体１の第１の貫通孔１ｂとの位置がずれたとしても、これらの間に絶縁性部材11が配置されていることによって信号端子５と第１の基体１（の第１の貫通孔１ｂの内壁）とが接触することがなく、絶縁性が保たれるので、第１の基体１および第２の基体２のそれぞれに、求められる特性を有する材料を選択することができ、より高信頼性の半導体素子収納用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, as in the example shown in FIGS. 8 to 10, in the above configuration, the insulating member 11 is provided between the inner surface of the first through hole 1 b and the signal terminal 5. Is disposed, the signal terminal 5 fixed to the second through hole 2b of the second base 2 due to the difference in thermal expansion coefficient between the first base 1 and the second base 2 is provided. And the first through-hole 1b of the first base 1 are displaced, the signal member 5 and the first base 1 (the first of the first base 1 (the first of the first base 1) are disposed by disposing the insulating member 11 therebetween. The inner wall of the through-hole 1b) is not in contact with each other and the insulation is maintained, so that a material having the required characteristics can be selected for each of the first base 1 and the second base 2. Thus, a highly reliable package for housing a semiconductor element is obtained.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの搭載部１ａに電子部品６を搭載するとともに、蓋体接合部１ｃに蓋体９を接合したことから、信号端子５が固定される第２の貫通孔２ｂの径が大きい場合であっても、外部との気密性を保つ上で重要な第２の貫通孔２ｂおよび第２の貫通孔２ｂ内の封止材３が蓋体接合部１ｃから離れていることにより、蓋体９を第１の基体１の上面の外周部に溶接またはろう接により接合したときの衝撃や、接合後の熱応力により気密性が損なわれることがないので、気密性に優れた、高信頼性の電子装置となる。   In the electronic device of the present invention, the electronic component 6 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention having any of the above-described configurations, and the lid body 9 is joined to the lid joint portion 1c. Even in the case where the diameter of the second through hole 2b to which the terminal 5 is fixed is large, the sealing in the second through hole 2b and the second through hole 2b, which is important for maintaining airtightness with the outside. Due to the fact that the material 3 is separated from the lid joint 1c, the lid 9 is hermetically sealed due to impact when the lid 9 is joined to the outer peripheral portion of the upper surface of the first base body 1 by welding or brazing, and thermal stress after joining. Therefore, the electronic device is excellent in airtightness and highly reliable.

第１の基体１は、上面の中央部に電子部品６の搭載部１ａを有するとともに、搭載された電子部品６が発生する熱をパッケージの外部に放散する機能を有する。このため、第１の基体１は、熱伝導性の良い金属から成るものであることが好ましく、搭載される電子部品６やセラミック製の回路基板６ａの熱膨張係数に近いものやコストの安いものとして、例えば、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｍｎ合金等の鉄系の合金や純鉄等の金属が選ばれる。より具体的には、Ｆｅ99.6質量％−Ｍｎ0.4質量％系のＳＰＣ（Steel Plate Cold）材がある。例えば基体１がＦｅ−Ｍｎ合金から成る場合は、この合金のインゴット（塊）に圧延加工や打ち抜き加工等の金属加工方法を施すことによって所定形状に製作され、貫通孔１ｂはドリル加工や金型による打ち抜き加工により形成される。また、第１の基体１が搭載部１ａとして突出部を有する形状の場合は、切削加工やプレス加工することにより形成することができる。   The first base 1 has a mounting portion 1a for the electronic component 6 at the center of the upper surface, and has a function of radiating heat generated by the mounted electronic component 6 to the outside of the package. For this reason, it is preferable that the first base 1 is made of a metal having good thermal conductivity. The first base 1 has a thermal expansion coefficient close to that of the electronic component 6 or ceramic circuit board 6a to be mounted, or has a low cost. For example, an iron-based alloy such as an Fe—Ni—Co alloy or an Fe—Mn alloy, or a metal such as pure iron is selected. More specifically, there is an SPC (Steel Plate Cold) material of Fe 99.6 mass% -Mn 0.4 mass%. For example, when the substrate 1 is made of an Fe—Mn alloy, the ingot (lumb) of the alloy is manufactured into a predetermined shape by applying a metal processing method such as rolling or punching, and the through-hole 1b is formed by drilling or mold. It is formed by punching. Moreover, when the 1st base | substrate 1 is a shape which has a protrusion part as the mounting part 1a, it can form by cutting or pressing.

第１の基体１は厚みが0.25〜１ｍｍの平板状であり、その形状には特に制限はないが、例えば直径が３〜６ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円板状，一辺が３〜15ｍｍの四角板状等である。   The first substrate 1 is a flat plate having a thickness of 0.25 to 1 mm, and the shape thereof is not particularly limited. For example, a part of a circle having a diameter of 3 to 6 mm and a radius of 1.5 to 8 mm is formed. It is a semicircular plate shape cut out, a square plate shape with a side of 3 to 15 mm, or the like.

第１の基体１の厚みは0.5ｍｍ以上が好ましい。厚みが0.5ｍｍ未満の場合は、電子部品６を保護するための金属製の蓋体９を金属製の第１の基体１の上面に接合する際に、接合温度等の接合条件により第１の基体１が曲がったりして変形し易くなる。また、厚みが１ｍｍを超えると、第２の基体２と接合して得られる電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなるので、第１の基体１の厚みは１ｍｍ以下であるのが好ましい。小型化のためには第１の基体１の厚みと第２の基体２の厚みとを加えて２ｍｍ以下であるのがよいので、図６に示す例のように、第１の基体１が凹部１ｄを有し、第２の基体２がこの凹部１ｄ内で第１の基体１に接合されている場合には、第１の基体１は１ｍｍを超えて２ｍｍ以下の厚みであってもよい。   The thickness of the first substrate 1 is preferably 0.5 mm or more. When the thickness is less than 0.5 mm, the first metal cover 9 for protecting the electronic component 6 is bonded to the upper surface of the first metal base 1 by the bonding conditions such as the bonding temperature. The substrate 1 is bent and easily deformed. On the other hand, if the thickness exceeds 1 mm, the thickness of the electronic component mounting package or the electronic device obtained by joining to the second base 2 becomes unnecessarily thick, and it is difficult to reduce the thickness. Is preferably 1 mm or less. In order to reduce the size, the thickness of the first base 1 and the thickness of the second base 2 should be added to be 2 mm or less, so that the first base 1 is recessed as shown in the example shown in FIG. 1d and the second substrate 2 is bonded to the first substrate 1 in the recess 1d, the first substrate 1 may have a thickness of more than 1 mm and 2 mm or less.

搭載部１ａの周辺には第１の基体１の上面から下面にかけて形成された直径が0.23〜1.15ｍｍの貫通孔１ｂを複数有する。貫通孔１ｂの直径は、中心に信号端子５が貫通することで特性インピーダンスが50Ωのエアー同軸が形成されるような寸法とする。例えば、信号端子５の直径が0.2ｍｍの場合であれば、貫通孔１ｂの直径は0.46ｍｍとすればよい。図１〜図６に示す例では、２つの貫通孔１ｂを有する第１の基体１に１個の電子部品６を搭載しているが、複数の電子部品６を搭載したり、電子部品６の数や電子部品６の端子の数に応じて第１の貫通孔１ｂを２つ以上形成したりしても構わない。   A plurality of through holes 1b having a diameter of 0.23 to 1.15 mm formed from the upper surface to the lower surface of the first base 1 are provided around the mounting portion 1a. The diameter of the through hole 1b is set such that an air coaxial with a characteristic impedance of 50Ω is formed by the signal terminal 5 passing through the center. For example, if the diameter of the signal terminal 5 is 0.2 mm, the diameter of the through hole 1b may be 0.46 mm. In the example shown in FIGS. 1 to 6, one electronic component 6 is mounted on the first base 1 having two through holes 1 b, but a plurality of electronic components 6 may be mounted, Two or more first through holes 1b may be formed according to the number and the number of terminals of the electronic component 6.

また、第１の基体１の表面には、耐食性に優れ、ろう材との濡れ性に優れた厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、第１の基体１が酸化腐食するのを有効に防止することができるとともに、電子部品６や回路基板６ａあるいは蓋体９を第１の基体１に良好にろう付けすることができる。   Further, on the surface of the first substrate 1, a Ni layer having a thickness of 0.5 to 9 μm and an Au layer having a thickness of 0.5 to 5 μm, which are excellent in corrosion resistance and wettability with a brazing material, are successively deposited by a plating method. It is good to leave it attached. Thereby, it is possible to effectively prevent the first base body 1 from being oxidatively corroded, and the electronic component 6, the circuit board 6 a, or the lid body 9 can be brazed to the first base body 1 satisfactorily.

第２の基体２は、第２の貫通孔２ｂ内に封止材３を介して信号端子５を固定するだけでなく、蓋体９とともに、封止材３および接合材４により電子部品６を気密に封止する機能を有する。このため、第２の基体２は、第１の基体１と第２の基体２との接合部が第１の貫通孔１ｂを取り囲むように、外周部で第１の基体１と接合されている。   The second base 2 not only fixes the signal terminal 5 in the second through hole 2b via the sealing material 3, but also the electronic component 6 by the sealing material 3 and the bonding material 4 together with the lid 9. It has a function of hermetically sealing. For this reason, the second base 2 is joined to the first base 1 at the outer peripheral portion so that the joint between the first base 1 and the second base 2 surrounds the first through hole 1b. .

また、第２の基体２は、第１の基体１と同様の厚みが0.25〜１ｍｍの平板状であり、その形状には特に制限はないが、例えば直径が３〜６ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円板状，一辺が３〜15ｍｍの四角板状等である。第２の基体２の形状および大きさを第１の基体１のそれらと同じにすると、外辺を基準として両者を容易に位置合わせすることができるので好ましい。第２の基体２はその外周部が第１の基体１の下面に接合されるので、必要な大きさの第２の貫通孔２ｂが形成されるとともに、外周部が第１の貫通孔１ｂより大きいものであればよい。例えば、図３（ａ）に示す例のように、第１の貫通孔１ｂを１つだけ取り囲んで接合されるような形状としてもよいし、図３（ｂ）に示す例のように、複数の第１の貫通孔１ｂ・１ｂを取り囲んで接合されるような形状としてもよい。このように第２の基体２が小さいと、第１の基体１との熱膨張差がある場合には、発生する熱応力が小さくなるので好ましい。１つの第２の基体２に電子部品搭載用パッケージの全ての信号端子５が固定されていると、第１の基体１と第２の基体２とを接合する際に、信号端子５の相対位置が正確に位置決めできるとともに、複数の第１の貫通孔１ｂと複数の第２の貫通孔２ｂ（それら第２の貫通孔２ｂ内に固定された複数の信号端子５）との位置合わせが一括して行なえるので、組み立て精度の良い電子部品搭載用パッケージを効率良く得ることができる。   The second substrate 2 is a flat plate having a thickness of 0.25 to 1 mm, which is the same as the first substrate 1, and the shape thereof is not particularly limited. For example, the second substrate 2 is a disk having a diameter of 3 to 6 mm and a radius. Is a semi-disc shape obtained by cutting a part of the circumference of 1.5 to 8 mm, a square plate shape having a side of 3 to 15 mm, and the like. It is preferable to make the shape and size of the second substrate 2 the same as those of the first substrate 1 because they can be easily aligned with respect to the outer side. Since the outer peripheral portion of the second base 2 is bonded to the lower surface of the first base 1, a second through hole 2b having a required size is formed, and the outer peripheral portion is formed from the first through hole 1b. Anything larger is acceptable. For example, as in the example shown in FIG. 3 (a), the shape may be such that only one first through hole 1b is surrounded and joined, or a plurality of like in the example shown in FIG. 3 (b). It is good also as a shape which surrounds and joins the 1st through-hole 1b * 1b. Thus, when the 2nd base | substrate 2 is small, when there exists a thermal expansion difference with the 1st base | substrate 1, since the generated thermal stress becomes small, it is preferable. When all the signal terminals 5 of the electronic component mounting package are fixed to one second base 2, the relative positions of the signal terminals 5 are bonded when the first base 1 and the second base 2 are joined. Can be accurately positioned, and the plurality of first through holes 1b and the plurality of second through holes 2b (the plurality of signal terminals 5 fixed in the second through holes 2b) are collectively aligned. Therefore, it is possible to efficiently obtain an electronic component mounting package with high assembly accuracy.

第２の基体２の厚みは0.5ｍｍ以上が好ましい。厚みが0.5ｍｍ未満の場合は、外部からの応力により変形しやすくなり、封止材３による気密性を保ち難くなる。また、厚みが１ｍｍを超えると、第１の基体１と接合して得られる電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなるので、第２の基体２の厚みは１ｍｍ以下であるのが好ましい。   The thickness of the second substrate 2 is preferably 0.5 mm or more. When the thickness is less than 0.5 mm, it is likely to be deformed by an external stress, and it is difficult to maintain the airtightness by the sealing material 3. On the other hand, if the thickness exceeds 1 mm, the thickness of the electronic component mounting package or electronic device obtained by joining to the first base 1 becomes unnecessarily thick, and it is difficult to reduce the thickness. Is preferably 1 mm or less.

第２の基体２は、上面から下面にかけて形成された直径が0.53〜2.65ｍｍの第２の貫通孔２ｂを有する。第２の基体２の位置は、第２の貫通孔２ｂが第１の貫通孔１ｂと対応して同心円状に位置するように配置する。   The second base 2 has a second through hole 2b having a diameter of 0.53 to 2.65 mm formed from the upper surface to the lower surface. The position of the second base 2 is arranged so that the second through hole 2b is concentrically positioned corresponding to the first through hole 1b.

このような第２の基体２は、封止材３の熱膨張係数に近いものやコストの安いものとして、例えば、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｍｎ合金等の金属から成るものが好ましい。例えば第２の基体２がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工や打ち抜き加工等の金属加工方法を施すことによって所定形状に製作される。その後または同時に、第２の貫通孔２ｂがドリル加工や金型による打ち抜き加工により形成される。   Such a second substrate 2 is preferably made of a metal such as an Fe—Ni—Co alloy or an Fe—Mn alloy, for example, having a thermal expansion coefficient close to that of the sealing material 3 or having a low cost. For example, when the 2nd base | substrate 2 consists of a Fe-Ni-Co alloy, it manufactures to a defined shape by giving metal processing methods, such as rolling and stamping, to the ingot (lump) of this alloy. Thereafter or simultaneously, the second through hole 2b is formed by drilling or punching with a mold.

また、第２の基体２の表面には第１の基体１と同様に、耐食性に優れ、ろう材との濡れ性に優れた厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、第２の基体２が酸化腐食するのを有効に防止することができるとともに、第２の基体２を第１の基体１にろう付けにより良好に接合することができる。   Similarly to the first substrate 1, the surface of the second substrate 2 is excellent in corrosion resistance and wettability with the brazing material. The Ni layer has a thickness of 0.5 to 9 μm and the thickness is 0.5 to 5 μm. It is preferable to deposit the Au layer sequentially by a plating method. Thereby, the second base 2 can be effectively prevented from being oxidatively corroded, and the second base 2 can be satisfactorily bonded to the first base 1 by brazing.

溝10は、蓋体９の接合時の衝撃や接合後の熱応力を緩和したり、蓋体接合部１ｃで発生した熱を放散しやすくしたりするためのものであるので、第１の基体１および第２の基体２の少なくとも一方に形成されていればよい。また、第２の貫通孔２ｂ内の信号端子５の封止性が損なわれないようにするためのものでもあるので、第２の基体２に溝10が形成される場合は、第２の基体２の溝10は、第１の基体１との接合部と第２の貫通孔２ｂとの間に形成するとよい。   Since the groove 10 is used to relieve the impact at the time of joining the lid body 9 and thermal stress after joining, or to easily dissipate the heat generated at the lid joint portion 1c, the first base body is used. It may be formed on at least one of the first and second substrates 2. Moreover, since it is also for preventing the sealing performance of the signal terminal 5 in the second through-hole 2b from being impaired, when the groove 10 is formed in the second base 2, the second base The second groove 10 may be formed between the junction with the first base 1 and the second through hole 2b.

図４に示す例においては、第１の基体１と第２の基体２との接合部の内側の、第１の基体１および第２の基体２それぞれの主面に垂直な溝10が形成されている。図５に示す例は、第２の基体２の外周部が第２の基体２の主面から突出しており、突出部の頂部（上面）が第１の基体１と第２の基体２との接合部となっている。この例では、第１の基体１の溝10は図４に示す例と同様に形成され、第２の基体２の溝10は、外周部の突出した部分の内側側面に垂直に（第２の基体２と平行に）形成されている。このように、第２の基体２が突出した部分で第１の基体１と接合していると、接合材４の幅を広く取ったとしても、封止材３と蓋体接合部１ｃとの距離を長く取ることができるので、封止材３に加わる応力を抑えることができ、信頼性をより高くすることができる。また、蓋体接合部１ｃで発生した熱が第２の基体２へ伝導する経路が長くなるので好ましい。図５に示す例のように、外周部の突出した部分の側面に第２の基体２の溝10を設けると、第２の基体２の主面に溝10を設けるスペースを空ける必要がないので、第２の貫通孔２ｂをより大きくすることができるので好ましい。また、第１の基体１の溝10は、いずれも、第１の基体１と第２の基体２との接合部の内側の主面に垂直に形成されているが、第１の基体１の側面に形成してもよい。第１の基体１の側面に垂直に形成した場合は、第１の基体１の外側に位置することとなり、蓋体接合部１ｃで発生した熱が第２の基体２へ伝導する経路に位置することとなるので、より放熱性が高まり、第２の基体２へ熱を伝導し難くなるという点で好ましい。   In the example shown in FIG. 4, grooves 10 perpendicular to the main surfaces of the first base body 1 and the second base body 2 inside the joint portion between the first base body 1 and the second base body 2 are formed. ing. In the example shown in FIG. 5, the outer peripheral portion of the second base 2 protrudes from the main surface of the second base 2, and the top (upper surface) of the protruding portion is between the first base 1 and the second base 2. It is a junction. In this example, the groove 10 of the first base 1 is formed in the same manner as in the example shown in FIG. 4, and the groove 10 of the second base 2 is perpendicular to the inner side surface of the protruding portion of the outer peripheral portion (second (In parallel with the substrate 2). As described above, when the second base body 2 is joined to the first base body 1 at the protruding portion, the sealing material 3 and the lid joint portion 1c are connected even if the width of the joint material 4 is widened. Since the distance can be increased, the stress applied to the sealing material 3 can be suppressed, and the reliability can be further increased. Moreover, since the path | route through which the heat | fever generate | occur | produced in the cover body junction part 1c conducts to the 2nd base | substrate 2 becomes long, it is preferable. If the groove 10 of the second base 2 is provided on the side surface of the protruding portion of the outer peripheral portion as in the example shown in FIG. 5, it is not necessary to make a space for providing the groove 10 on the main surface of the second base 2. Since the 2nd through-hole 2b can be enlarged more, it is preferable. The grooves 10 of the first base 1 are all formed perpendicular to the inner main surface of the joint between the first base 1 and the second base 2. You may form in a side surface. When formed perpendicularly to the side surface of the first base body 1, it is located outside the first base body 1, and is located in a path through which heat generated in the lid joint portion 1 c is conducted to the second base body 2. Therefore, it is preferable in that heat dissipation is further improved and heat is not easily conducted to the second base 2.

また、第１の基体１が下面に凹部１ｄを有し、第２の基体２が凹部１ｄ内（凹部１ｄの側面）で第１の基体１に接合されている場合には、図６に示す例のように、第１の基体１の溝10は、凹部１ｄの周囲の突出した部分に形成されるが、図６に示す例のように、突出した部分の主面（頂面）に形成してもよいし、突出した部分の内側面に形成してもよい。溝10を形成するのが突出した部分の主面であれば、プレス加工等により形成するのが容易であり、溝10を形成するのが突出した部分の内側面であれば、蓋体接合部１ｃで発生した熱が第２の基体２へ伝導する経路が長くなるので好ましい。   FIG. 6 shows a case where the first base 1 has a recess 1d on the lower surface and the second base 2 is joined to the first base 1 in the recess 1d (side surface of the recess 1d). As in the example, the groove 10 of the first base 1 is formed in the protruding portion around the recess 1d, but is formed in the main surface (top surface) of the protruding portion as in the example shown in FIG. Alternatively, it may be formed on the inner surface of the protruding portion. If it is the main surface of the protruding portion that forms the groove 10, it is easy to form by pressing or the like, and if the inner surface of the protruding portion forms the groove 10, the lid joint portion This is preferable because the path through which the heat generated in 1c is conducted to the second substrate 2 becomes longer.

溝10は、蓋体９の接合時の熱衝撃や熱応力の緩和のために、第１の基体１と第２の基体２との接合部に沿って全周にわたって形成されているのが好ましい。ただし、図７（ａ）に示す例のように１本の連続した溝10でなくても、図７（ｂ）に示す例のように、第１の基体１と第２の基体２との接合部（図７（ｂ）では第２の基体２の側面）に沿って全周にわたって連続していない複数の溝10が形成され、接合部から溝10が形成されている方を見た場合に、１つの溝10の不連続な部分と他の溝10とが重なるように形成されていればよい。また、連続した溝10が２重以上に形成されていてもよいし、例えば第１の基体１と第２の基体２との接合部と第２の貫通孔２ｂとの距離が短い部分を２重（例えば、図７（ｂ）の内側の溝10が連続した形状であるような場合）にしてもよい。   The groove 10 is preferably formed over the entire circumference along the joint between the first base 1 and the second base 2 in order to reduce thermal shock and thermal stress when the lid 9 is joined. . However, even if it is not one continuous groove 10 as in the example shown in FIG. 7A, the first base 1 and the second base 2 are not as shown in the example shown in FIG. 7B. When a plurality of non-continuous grooves 10 are formed along the joint (the side surface of the second base 2 in FIG. 7B) and the groove 10 is formed from the joint. In addition, the discontinuous portion of one groove 10 and the other groove 10 may be formed so as to overlap each other. Moreover, the continuous groove | channel 10 may be formed more than double, for example, the part where the distance of the junction part of the 1st base | substrate 1 and the 2nd base | substrate 2 and the 2nd through-hole 2b is short is 2. It may be heavy (for example, when the inner groove 10 in FIG. 7B has a continuous shape).

溝10の幅や深さは、この部分で蓋体９の接合時の衝撃や接合後の熱応力を緩和したり、蓋体接合部１ｃで発生した熱を放散したりできるような寸法にすればよく、第１の基体１および第２の基体２の材質に応じて設定すればよい。第１の基体１および第２の基体２がＳＰＣ材やＦｅ−Ｎｉ−Ｃｏ合金であり、図４に示す例のように第１の基体１および第２の基体２の主面に対して垂直に形成される場合は、溝10の深さを第１の基体１および第２の基体２の厚みより0.1〜0.25ｍｍ小さい厚みとなるように、すなわち、溝10の底部の厚みが0.1〜0.25ｍｍとなるように形成すると、溝10の部分による応力緩和の効果が大きくなり、かつ気密性も高いので好ましい。溝10の底部の厚みが薄いほど応力緩和の効果は大きいが、溝10の底部の厚みが0.1ｍｍ未満となると、溝10の部分での変形が大きくなり、電子部品６を搭載して使用した際に、繰り返し熱応力が加わることで溝10の底部に亀裂が入って気密性が低くなりやすい。同様の理由から、溝10の断面形状は、底面と側面とがなす角部に丸みをつけた形状や、Ｕ字形状が好ましい。   The width and depth of the groove 10 should be sized so that the impact at the time of joining the lid body 9 and the thermal stress after joining can be relaxed or the heat generated in the lid joint portion 1c can be dissipated at this portion. What is necessary is just to set according to the material of the 1st base | substrate 1 and the 2nd base | substrate 2. The first substrate 1 and the second substrate 2 are SPC materials or Fe—Ni—Co alloys, and are perpendicular to the main surfaces of the first substrate 1 and the second substrate 2 as in the example shown in FIG. Are formed so that the depth of the groove 10 is 0.1 to 0.25 mm smaller than the thickness of the first substrate 1 and the second substrate 2, that is, the thickness of the bottom of the groove 10 is 0.1 to 0.25. It is preferable that the thickness is made to be mm because the effect of stress relaxation by the groove 10 is increased and the airtightness is high. The thinner the bottom portion of the groove 10, the greater the stress relaxation effect. However, when the bottom portion of the groove 10 has a thickness of less than 0.1 mm, the deformation at the portion of the groove 10 increases, and the electronic component 6 is mounted and used. At this time, repeated thermal stress is likely to cause a crack at the bottom of the groove 10 to reduce hermeticity. For the same reason, the cross-sectional shape of the groove 10 is preferably a rounded corner or a U-shape formed by the bottom surface and the side surface.

信号端子５は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えば信号端子５がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、この合金のインゴット（塊）に圧延加工や打ち抜き加工等の金属加工方法を施すことによって、長さが1.5〜22ｍｍ、直径が0.1〜0.5ｍｍの線状に製作される。   The signal terminal 5 is made of a metal such as an Fe—Ni—Co alloy or an Fe—Ni alloy. For example, when the signal terminal 5 is made of an Fe—Ni—Co alloy, rolling or punching is performed on an ingot of the alloy. By applying a metal processing method such as processing, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 0.5 mm is manufactured.

信号端子５は、少なくとも下端部が第２の基体２の第２の貫通孔２ｂから１〜20ｍｍ程度突出するように封止材３を介して固定され、上端部は第１の基体１の第１の貫通孔１ｂから０〜２ｍｍ程度突出させる。   The signal terminal 5 is fixed via the sealing material 3 so that at least the lower end protrudes from the second through hole 2b of the second base 2 by about 1 to 20 mm, and the upper end is the first base 1 of the first base 1. It protrudes about 0-2 mm from 1 through-hole 1b.

接地端子８は、信号端子５と同様にして製作され、第２の基体２の下面にろう材等を用いて接続される。図２に示す例のように、位置決めの容易性と接合強度の向上のために、予め第２の基体２の下面に穴を形成しておき、その穴に接地端子４を挿入して接合してもよい。また、同様の理由で、図２に示す例のように、第２の基体２の下面に当接するように接地端子８に鍔をつけて、接合面積をより大きくしてもよい。このようにして第２の基体２に接地端子８を接合し、第１の基体１と第２の基体２とを導電性の接合材４により接合することで、接続端子８を外部電気回路に接続した際には、第１の基体１が接地導体としても機能する。   The ground terminal 8 is manufactured in the same manner as the signal terminal 5 and connected to the lower surface of the second base 2 using a brazing material or the like. As in the example shown in FIG. 2, in order to facilitate positioning and improve the bonding strength, a hole is formed in advance on the lower surface of the second base 2, and the ground terminal 4 is inserted into the hole for bonding. May be. For the same reason, as in the example shown in FIG. 2, the grounding terminal 8 may be provided with a ridge so as to be in contact with the lower surface of the second base 2 to increase the bonding area. In this way, the ground terminal 8 is joined to the second base 2, and the first base 1 and the second base 2 are joined by the conductive joining material 4, thereby connecting the connection terminal 8 to an external electric circuit. When connected, the first base 1 also functions as a ground conductor.

接地端子８は、図３（ａ）に示す例のような場合は、第１の基体１に図２に示す例と同様にして接合される。あるいは、図５に示す例のように、接地端子８を第１の基体１に同様にして接合し、接合されていない端部を第２の基体２に設けた孔に通して、この孔と接地端子８との間を接地封止材８ａで充填して封止すればよい。このようにすると、第１の基体１と第２の基体２との接合に、非導電性の接合材４を用いることができる。接地封止材８ａは、信号端子５を固定する封止材３と同じものを用いて、信号端子５の固定と同時に行なってもよい。この場合は、接地端子８の第１の基体１への接合を第１の基体１と第２の基体との接合と同時に行なってもよい。   In the case of the example shown in FIG. 3A, the ground terminal 8 is joined to the first base 1 in the same manner as the example shown in FIG. Alternatively, as in the example shown in FIG. 5, the ground terminal 8 is joined to the first base 1 in the same manner, and the unjoined end portion is passed through the hole provided in the second base 2, What is necessary is just to fill and seal between the ground terminals 8 with the ground sealing material 8a. In this way, the non-conductive bonding material 4 can be used for bonding the first base 1 and the second base 2. The ground sealing material 8 a may be performed simultaneously with the fixing of the signal terminal 5 by using the same material as the sealing material 3 for fixing the signal terminal 5. In this case, the bonding of the ground terminal 8 to the first substrate 1 may be performed simultaneously with the bonding of the first substrate 1 and the second substrate.

封止材３は、ガラスやセラミックスなどの無機材料から成り、信号端子５と第２の基体２との絶縁間隔を確保するとともに、信号端子５を第２の貫通孔２ｂに固定する機能を有する。このような封止材３の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材３の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、信号端子５の外径が0.2ｍｍの場合であれば、エアー同軸となる第１の貫通孔１ｂの内径を0.46ｍｍとし、第２の貫通孔２ｂの内径を1.75ｍｍとして、封止材３に比誘電率が6.8であるものを用いればよい。あるいは信号端子５の外径が0.25ｍｍの場合であれば、第１の貫通孔１ｂの内径を0.57ｍｍとし、第２の貫通孔２ｂの内径を2.2ｍｍとして、封止材３の比誘電率が6.8であるものを用いればよい。また、同じく信号端子５の外径が0.25ｍｍの場合であれば、第２の貫通孔２ｂの内径を1.65ｍｍとして、封止材３の比誘電率が５であるものを用いてもよい。   The sealing material 3 is made of an inorganic material such as glass or ceramics, and has a function of securing an insulation interval between the signal terminal 5 and the second base 2 and fixing the signal terminal 5 to the second through hole 2b. . Examples of such a sealing material 3 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 3. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, if the outer diameter of the signal terminal 5 is 0.2 mm, the inner diameter of the first through hole 1b serving as the air coaxial is set to 0.46 mm, and the second through hole 2b The inner diameter is 1.75 mm, and the sealing material 3 having a relative dielectric constant of 6.8 may be used. Alternatively, if the outer diameter of the signal terminal 5 is 0.25 mm, the inner diameter of the first through hole 1b is 0.57 mm, the inner diameter of the second through hole 2b is 2.2 mm, and the relative dielectric constant of the sealing material 3 is set. What has a 6.8 is sufficient. Similarly, when the outer diameter of the signal terminal 5 is 0.25 mm, the inner diameter of the second through hole 2b may be 1.65 mm, and the relative permittivity of the sealing material 3 may be 5.

封止材３がガラスから成る場合は、内径が信号端子５の外径より大きく、外径が第２の貫通孔２ｂの内径より小さい筒状になるように粉体プレス法や押し出し成形法等で成形されたガラスの封止材３を第２の貫通孔２ｂに挿入し、信号端子５をこの封止材３に挿通し、しかる後、所定の温度に加熱して封止材３を溶融させることにより、信号端子５が同軸状とされて封止材３に埋め込まれるとともに第２の貫通孔２ｂに第２の基体２と絶縁されて気密に固定される。   When the sealing material 3 is made of glass, a powder pressing method, an extrusion molding method, or the like such that the inner diameter is larger than the outer diameter of the signal terminal 5 and the outer diameter is smaller than the inner diameter of the second through hole 2b. The glass sealing material 3 formed in step 1 is inserted into the second through-hole 2b, the signal terminal 5 is inserted into the sealing material 3, and then heated to a predetermined temperature to melt the sealing material 3. By doing so, the signal terminal 5 is made coaxial and embedded in the sealing material 3 and is insulated from the second base 2 and fixed in an airtight manner in the second through hole 2b.

封止材３の比誘電率が小さいほど、第２の貫通孔２ｂを小さくしてもインピーダンスを50Ωに整合することができるため、封止面積が小さく、蓋体接合部１ｃとの距離が大きくなることにより封止信頼性が高く、より小型の電子部品収納用パッケージとすることができる。例えば、信号端子５の外径が0.25ｍｍのものを用いて、封止材３に比誘電率５のホウケイ酸系ガラスを用いると、第２の貫通孔２ｂの内径を1.65ｍｍとすることができる。このホウケイ酸系ガラスは熱膨張係数が約６×10−６／℃であるので、第２の基体２には封止材３との熱膨張差の小さいＦｅ−Ｎｉ−Ｃｏ合金（熱膨張係数：約５×10−６／℃）を用いて、両者の熱膨張差によって第２の貫通孔２ｂ内の封止材３にクラックが入ったり、封止材３と信号端子５や第２の貫通孔２ｂの内壁面との間で剥がれが生じたりすることがないようにする。一方、第１の基体１には放熱性のよいＦｅ99.6質量％−Ｍｎ0.4質量％系のＳＰＣ材を用いるのが好ましい。このＳＰＣ材の熱膨張係数は約12×10−６／℃である。第１の基体１と第２の基体２との間の熱膨張係数の相違によって、第２の基体２の第２の貫通孔２ｂに固定された信号端子５と第１の基体１の第１の貫通孔１ｂとの位置がずれてしまい、信号端子５と第１の基体１（の第１の貫通孔１ｂの内面）とが接触する場合がある。このとき、上述したように、これらの間に絶縁性部材11が配置されていると、このような接触を防止できるので、さらに高放熱かつ封止信頼性に優れたものとすることができる。 As the relative permittivity of the sealing material 3 is smaller, the impedance can be matched to 50Ω even if the second through hole 2b is made smaller, so the sealing area is smaller and the distance from the lid joint 1c is larger. As a result, the sealing reliability is high, and a smaller electronic component storage package can be obtained. For example, if a signal terminal 5 having an outer diameter of 0.25 mm and borosilicate glass having a relative dielectric constant of 5 is used as the sealing material 3, the inner diameter of the second through hole 2b may be 1.65 mm. it can. Since this borosilicate glass has a thermal expansion coefficient of about 6 × 10 −6 / ° C., the second substrate 2 has an Fe—Ni—Co alloy (thermal expansion coefficient) having a small difference in thermal expansion from the sealing material 3. : About 5 × 10 −6 / ° C.) due to the difference in thermal expansion between them, the sealing material 3 in the second through hole 2b is cracked, or the sealing material 3 and the signal terminal 5 or the second The peeling is not caused between the inner wall surface of the through hole 2b. On the other hand, it is preferable to use an Fe 99.6 mass% -Mn 0.4 mass% SPC material with good heat dissipation for the first substrate 1. The thermal expansion coefficient of this SPC material is about 12 × 10 −6 / ° C. Due to the difference in thermal expansion coefficient between the first base 1 and the second base 2, the signal terminal 5 fixed to the second through hole 2b of the second base 2 and the first of the first base 1 The position of the through hole 1b may be displaced, and the signal terminal 5 may contact the first base 1 (the inner surface of the first through hole 1b). At this time, as described above, when the insulating member 11 is disposed between them, such a contact can be prevented, so that further high heat dissipation and excellent sealing reliability can be achieved.

絶縁性部材11の配置は、図８に示す例のように、第１の貫通孔１ｂの内面と信号端子５との間に充填して配置してもよいし、図９に示す例のように、第１の貫通孔１ｂの内面および信号端子５の第１の貫通孔１ｂ内に位置する部分の外面の少なくとも一方を被覆するように配置してもよい。あるいは、図10に示す例のように、第１の貫通孔１ｂの長さ方向の一部において（第１の基体１の厚みより小さい範囲で）第１の貫通孔１ｂの内面と信号端子５との間を充填しても、信号端子５と第１の基体１（の第１の貫通孔１ｂの内壁）とは接触することがなく、絶縁性が保たれるのでよい。第１の貫通孔１ｂの長さ方向の全域において信号端子５のインピーダンスを整合させるには、第１の貫通孔１ｂの長さ方向で第１の貫通孔１ｂの内面と信号端子５との間の静電容量が同じであるのがよいので、第１の貫通孔１ｂの内面と信号端子５との間に絶縁性部材11を充填して配置する場合は、図８に示す例のように、第１の貫通孔１ｂの長さ方向の全域で充填するのがよい。同様に、第１の貫通孔１ｂの内面や信号端子５の外面を絶縁性部材11で被覆する場合は、その厚みは第１の貫通孔１ｂ内で一定にするのがよい。また、第１の基体１と第２の基体２との間の熱膨張係数の相違によって、第２の基体２の第２の貫通孔２ｂに固定された信号端子５と第１の基体１の第１の貫通孔１ｂとの位置がずれてしまうと、インピーダンスもずれてしまうので、これらの間に絶縁性部材11が充填されているのがよい。   The insulating member 11 may be disposed between the inner surface of the first through hole 1b and the signal terminal 5 as in the example shown in FIG. 8, or as in the example shown in FIG. Further, at least one of the inner surface of the first through hole 1b and the outer surface of the portion of the signal terminal 5 located in the first through hole 1b may be covered. Alternatively, as in the example shown in FIG. 10, the inner surface of the first through hole 1 b and the signal terminal 5 in a part of the length direction of the first through hole 1 b (in a range smaller than the thickness of the first base 1). Even if it is filled, the signal terminal 5 and the first base 1 (the inner wall of the first through-hole 1b) do not come into contact with each other, and the insulating property can be maintained. In order to match the impedance of the signal terminal 5 in the entire length direction of the first through hole 1b, between the inner surface of the first through hole 1b and the signal terminal 5 in the length direction of the first through hole 1b. 8 should have the same capacitance, so that the insulating member 11 is filled between the inner surface of the first through hole 1b and the signal terminal 5 as shown in the example of FIG. The first through-hole 1b is preferably filled in the entire length direction. Similarly, when the inner surface of the first through hole 1b and the outer surface of the signal terminal 5 are covered with the insulating member 11, the thickness thereof should be constant in the first through hole 1b. Further, due to the difference in thermal expansion coefficient between the first base 1 and the second base 2, the signal terminal 5 fixed to the second through hole 2 b of the second base 2 and the first base 1 If the position of the first through hole 1b is shifted, the impedance is also shifted. Therefore, it is preferable that the insulating member 11 is filled therebetween.

絶縁性部材11は、第１の基体１に蓋体９を接合する際の熱によって溶融したり分解したりしないようなものから選択される。第１の貫通孔１ｂの内面と信号端子５との間を絶縁性部材11で充填する場合は、その誘電率が大きいと第１の貫通孔１ｂの径を大きくしなければならず、第１の基体１と蓋体９との接合部からの距離が近くなって蓋体９を接合する際の熱の影響を受けるので、比誘電率の小さい、４フッ化エチレン樹脂（比誘電率：約2.0），ポリフェニルエーテル樹脂（比誘電率：約2.7），シクロオレフィン樹脂（比誘電率：約2.4）等の樹脂を用いる。絶縁性部材11を、第１の貫通孔１ｂの内面および信号端子５の第１の貫通孔１ｂ内に位置する部分の外面の少なくとも一方を被覆して配置する場合は、第１の貫通孔１ｂの内面と信号端子５との間には空間が形成されてその部分の比誘電率は小さいので、上述したような樹脂以外にも、それより比誘電率が大きい、封止材３と同様のものを用いることができる。   The insulating member 11 is selected from those that are not melted or decomposed by heat when the lid 9 is joined to the first base 1. When the space between the inner surface of the first through hole 1b and the signal terminal 5 is filled with the insulating member 11, if the dielectric constant is large, the diameter of the first through hole 1b must be increased. Since the distance from the joint portion between the base 1 and the lid 9 becomes short and is affected by heat when the lid 9 is joined, a tetrafluoroethylene resin having a small relative dielectric constant (relative dielectric constant: about 2.0), polyphenyl ether resin (relative dielectric constant: about 2.7), cycloolefin resin (relative dielectric constant: about 2.4), and other resins. When the insulating member 11 is disposed so as to cover at least one of the inner surface of the first through hole 1b and the outer surface of the portion located in the first through hole 1b of the signal terminal 5, the first through hole 1b Since a space is formed between the inner surface and the signal terminal 5 and the relative dielectric constant of the portion is small, in addition to the resin as described above, the relative dielectric constant is larger than that of the sealing material 3. Things can be used.

絶縁性部材11として比誘電率が2.0である４フッ化エチレン樹脂を用いて、第１の貫通孔１ｂの内面と信号端子５との間に絶縁性部材11を充填する場合は、信号端子５の外径が0.25ｍｍのものを用いると、特性インピーダンスを50Ωとするには、第１の貫通孔１ｂの径は0.8ｍｍとなる。同じ絶縁性部材11で第１の貫通孔１ｂの内面を被覆する場合は、その厚みを0.025ｍｍとして、信号端子５の外径が0.25ｍｍのものを用いると、第１の貫通孔１ｂの径は0.6ｍｍとなる。   When the insulating member 11 is filled with the insulating member 11 between the inner surface of the first through hole 1b and the signal terminal 5 using a tetrafluoroethylene resin having a relative dielectric constant of 2.0 as the insulating member 11, the signal terminal 5 If the outer diameter of the first through hole 1 is 0.25 mm, the diameter of the first through hole 1 b is 0.8 mm in order to set the characteristic impedance to 50Ω. When covering the inner surface of the first through-hole 1b with the same insulating member 11, if the thickness is 0.025 mm and the outer diameter of the signal terminal 5 is 0.25 mm, the diameter of the first through-hole 1b is used. Is 0.6 mm.

絶縁性部材11を配置するには、絶縁性部材11がガラスから成る場合であれば、封止材３と同様にして、あるいはガラス粉末に適当な溶剤やバインダーを加えて作製したガラスペーストを第１の貫通孔１ｂの内面に塗布したり充填したりしてから加熱・冷却することによって溶融・凝固させればよい。絶縁性部材11が熱硬化性の樹脂から成る場合であれば、液状の樹脂を第１の貫通孔１ｂの内面に塗布したり充填したりしてから加熱することによって硬化させてもよいし、貫通孔１ｂの内径および信号端子５の外形に応じた形状に成型したものを第１の貫通孔１ｂに嵌め込み、必要に応じて接着剤で固定すればよい。   In order to dispose the insulating member 11, if the insulating member 11 is made of glass, a glass paste prepared in the same manner as the sealing material 3 or by adding an appropriate solvent or binder to the glass powder is used. It may be melted and solidified by heating and cooling after coating or filling the inner surface of one through-hole 1b. If the insulating member 11 is made of a thermosetting resin, it may be cured by heating after applying or filling a liquid resin on the inner surface of the first through-hole 1b, What is molded into a shape corresponding to the inner diameter of the through hole 1b and the outer shape of the signal terminal 5 may be fitted into the first through hole 1b and fixed with an adhesive as necessary.

第１の基体１と第２の基体２との接合は、ろう材やはんだあるいはガラス等の、接合とともに気密に封止することが可能な接合材４を用いて行なえばよい。例えば、第１の基体１と第１の基体２それぞれの接合する面にメタライズ法や薄膜法で金属層を形成し、金（Ａｕ）80質量％−錫（Ｓｎ）20質量％（融点280℃）や、金（Ａｕ）88質量％−ゲルマニウム（Ｇｅ）12質量％（融点356℃）や錫（Ｓｎ）96.5質量％−銀（Ａｇ）3.5質量％（融点221℃）等の合金半田を用いた半田箔を接合面の形状に金型等で打ち抜いて作製した接合材４を第１の基体１と第２の基体２それぞれの金属層間に挟んで、窒素中で合金半田の融点以上に加熱して冷却することで、第１の基体１と第２の基体２とが接合される。   The first base 1 and the second base 2 may be joined using a joining material 4 such as a brazing material, solder, or glass that can be hermetically sealed together with the joining. For example, a metal layer is formed by a metallization method or a thin film method on the surfaces where the first substrate 1 and the first substrate 2 are joined, and gold (Au) 80 mass% -tin (Sn) 20 mass% (melting point 280 ° C.). ), Gold (Au) 88 mass% -germanium (Ge) 12 mass% (melting point 356 ° C.) or tin (Sn) 96.5 mass% -silver (Ag) 3.5 mass% (melting point 221 ° C.) The joining material 4 produced by punching the solder foil into the shape of the joining surface with a mold or the like is sandwiched between the metal layers of the first base 1 and the second base 2 and heated to the melting point of the alloy solder or higher in nitrogen. Then, the first base 1 and the second base 2 are joined by cooling.

第１の基体１の熱伝導率は第２の基体２の熱伝導率より大きいことが好ましい。例えば、ＳＰＣ材から成る第１の基体１と、Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体２とを用いた場合は、ＳＰＣ材の熱伝導率が80Ｗ／（ｍ・Ｋ）であり、Ｆｅ−Ｎｉ−Ｃｏ合金の熱伝導率が30Ｗ／（ｍ・Ｋ）であるので、蓋体接合部１ｃで発生した熱は熱伝導率の大きい第１の基体１内を伝導しやすく、熱伝導率の小さい第２の基体２へは伝導し難くなるので好ましい。また、熱伝導率の高い第１の基体１に電子部品６を搭載した電子装置は、その使用時に電子部品６が発する熱を熱伝導率の高い第１の基体１を通して外部に良好に放熱することができるので、信頼性の高い電子装置となる。   The thermal conductivity of the first substrate 1 is preferably larger than the thermal conductivity of the second substrate 2. For example, when the first base 1 made of SPC material and the second base 2 made of Fe—Ni—Co alloy are used, the thermal conductivity of the SPC material is 80 W / (m · K), Since the thermal conductivity of the Fe—Ni—Co alloy is 30 W / (m · K), the heat generated in the lid joint portion 1 c is easily conducted in the first base 1 having a high thermal conductivity, and the heat conduction. Since it becomes difficult to conduct to the second base 2 having a low rate, it is preferable. In addition, the electronic device in which the electronic component 6 is mounted on the first base 1 having a high thermal conductivity radiates the heat generated by the electronic component 6 during use well to the outside through the first base 1 having a high thermal conductivity. Therefore, an electronic device with high reliability can be obtained.

また、ＳＰＣ材から成る第１の基体１と、Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体２との組合せの場合は、比誘電率の小さいガラスを封止材３として用いることができ、それにより第２の貫通孔２ｂおよび第２の基体２を小さくし、電子部品搭載用パッケージを小型化することができる。比誘電率の小さいガラスは、一般的に熱膨張係数が２×10−６〜５×10−６／℃と小さいので、ＳＰＣ材のような高熱伝導性の金属が熱膨張係数が大きい（８×10−６〜10×10−６／℃）のに対して、比較的熱膨張係数の小さい（４×10−６〜６×10−６／℃）Ｆｅ−Ｎｉ−Ｃｏ合金から成る第２の基体２の第２の貫通孔２ｂ内に充填しても、第２の基体２との熱膨張差により剥がれたり、割れたりすることがないからである。このように、本発明の電子部品搭載用パッケージは、電子部品６が搭載される第１の基体１と信号端子５が封止材３により固定される第２の基体２とを、それぞれに必要な特性を有する別々の材質にすることで、信頼性に優れた電子装置が得られるものとなる。 Further, in the case of a combination of the first base 1 made of SPC material and the second base 2 made of Fe—Ni—Co alloy, glass having a small relative dielectric constant can be used as the sealing material 3. Thereby, the second through hole 2b and the second base 2 can be made small, and the electronic component mounting package can be miniaturized. A glass having a small relative dielectric constant generally has a small thermal expansion coefficient of 2 × 10 −6 to 5 × 10 −6 / ° C., so that a metal having high thermal conductivity such as an SPC material has a large thermal expansion coefficient (8 (2 × 10 −6 to 10 × 10 −6 / ° C.), which is made of an Fe—Ni—Co alloy having a relatively small thermal expansion coefficient (4 × 10 −6 to 6 × 10 −6 / ° C.). This is because even if the second through hole 2b of the base 2 is filled, it will not be peeled off or cracked due to a difference in thermal expansion with the second base 2. As described above, the electronic component mounting package of the present invention requires the first base 1 on which the electronic component 6 is mounted and the second base 2 on which the signal terminal 5 is fixed by the sealing material 3, respectively. By using different materials having various characteristics, an electronic device with excellent reliability can be obtained.

このような本発明の電子部品搭載用パッケージの搭載部１ａに電子部品６を搭載するとともに、第１の基体１の蓋体接合部１ｃに蓋体９を接合することにより、本発明の電子装置となる。   The electronic device 6 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention, and the lid body 9 is joined to the lid joint portion 1c of the first base 1, thereby the electronic device of the present invention. It becomes.

電子部品６としては、ＬＤ（レーザーダイオード）やＰＤ（フォトダイオ−ド）等の光半導体素子、あるいは半導体集積回路素子を含む半導体素子、あるいは水晶振動子や弾性表面波素子等の圧電素子、あるいは圧力センサー素子，容量素子，抵抗器等が挙げられる。   The electronic component 6 includes an optical semiconductor element such as an LD (laser diode) or PD (photodiode), a semiconductor element including a semiconductor integrated circuit element, a piezoelectric element such as a crystal resonator or a surface acoustic wave element, or A pressure sensor element, a capacitive element, a resistor, etc. are mentioned.

回路基板６ａの絶縁基板は、酸化アルミニウム（アルミナ：Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体等のセラミックス絶縁材料等から成り、絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状とし、これをドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することにより製作される。また、その後、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。 The insulating substrate of the circuit board 6a is made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body, an aluminum nitride (AlN) sintered body, and the insulating substrate is, for example, an aluminum oxide sintered body. In the case of a body, first, a suitable organic solvent and solvent are added to and mixed with raw material powders such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. This is formed into a sheet shape by a doctor blade method, a calender roll method or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C. Thereafter, the main surface of the insulating substrate may be polished as necessary.

この絶縁基板の上面に配線導体を蒸着法およびフォトリソグラフィ法を用いて形成することで、回路基板６ａとなる。なお、配線導体は、例えば密着金属層、拡散防止層および主導体層が順次積層された３層構造の導体層から成る。   By forming a wiring conductor on the upper surface of the insulating substrate using a vapor deposition method and a photolithography method, a circuit substrate 6a is obtained. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金，窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうち少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ程度が好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向があり、0.2μｍを超えると、成膜時の内部応力によって密着金属層が絶縁基板から剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that at least one kind of metal having a coefficient of thermal expansion close to that of ceramics, such as a Cr) alloy and tantalum nitride (Ta 2 N), and the thickness thereof is preferably about 0.01 to 0.2 μm. If the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. If the thickness exceeds 0.2 μm, the adhesion metal layer is insulated by the internal stress during film formation. It tends to become easy to peel off.

また、拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金，Ｔｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向があり、１μｍを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は絶縁基板４との密着性が良好なため、密着金属層を省くことも可能である。   In addition, the diffusion preventing layer is made of platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, from the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer. It is preferably made of at least one metal having good thermal conductivity such as Ti—W alloy, and the thickness is preferably about 0.05 to 1 μm. If the thickness of the diffusion prevention layer is less than 0.05 μm, defects such as pinholes tend to be generated, making it difficult to perform the function as the diffusion prevention layer. If the thickness exceeds 1 μm, the diffusion prevention layer is caused by internal stress during film formation. There is a tendency to easily peel from the adhesion metal layer. When a Ni—Cr alloy is used for the diffusion preventing layer, the Ni—Cr alloy has good adhesion to the insulating substrate 4, and therefore, the adhesion metal layer can be omitted.

さらに、主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉ，銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の厚みが0.1μｍ未満では、電気抵抗が大きなものとなって回路基板６ａの配線導体に要求される電気抵抗を満足できなくなる傾向があり、５μｍを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。なお、Ａｕは貴金属で高価であることから、低コスト化の点でなるべく薄く形成することが好ましい。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。   Furthermore, the main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance becomes large and the electric resistance required for the wiring conductor of the circuit board 6a tends not to be satisfied. Therefore, the main conductor layer tends to be easily peeled off from the diffusion preventing layer. Since Au is a noble metal and expensive, it is preferably formed as thin as possible in terms of cost reduction. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

また、回路基板６ａは、下面の接地導体層の表面に温度が200〜400℃に融点を有する半田や金（Ａｕ）−錫（Ｓｎ）等の低融点ろう材をスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によって低融点ろう材を形成したり、低融点ろう材のプレフォームを用いて200〜400℃の温度で加熱することにより第１の基体１に固定される。   The circuit board 6a is printed on the surface of the ground conductor layer on the lower surface by soldering a solder having a melting point of 200 to 400 ° C. or a low melting point solder such as gold (Au) -tin (Sn) using a screen printing method. Alternatively, a low melting point brazing material is formed by photolithography, or a low melting point brazing material preform is used and heated at a temperature of 200 to 400 ° C. to be fixed to the first substrate 1.

電子部品６は、搭載部１ａに接合された回路基板６ａに200〜400℃の融点を有するＡｕ−Ｓｎ等のロウ材によりロウ付けされて固定され、しかる後、その電極をボンディングワイヤ７を介して回路基板６ａの配線導体に電気的に接続される。   The electronic component 6 is fixed to the circuit board 6a bonded to the mounting portion 1a by being brazed with a brazing material such as Au—Sn having a melting point of 200 to 400 ° C. After that, the electrode is connected via the bonding wire 7. Are electrically connected to the wiring conductor of the circuit board 6a.

電子部品６の電子部品搭載用パッケージや回路基板６ａへの搭載、あるいは回路基板６ａの電子部品搭載用パッケージへの搭載は、低融点ろう材により固定することにより行なえばよい。例えば、回路基板６ａを基体１上に搭載した後に電子部品６を回路基板６ａ上に搭載する場合は、回路基板６ａの固定には金−錫（Ａｕ−Ｓｎ）合金や金−ゲルマニウム（Ａｕ−Ｇｅ）合金をろう材として用い、電子部品６の固定には、これらより融点の低い錫−銀（Ｓｎ−Ａｇ）合金や錫−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）合金のろう材や、融点より低い温度で硬化可能なＡｇエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品６を回路基板６ａ上に搭載した後に回路基板６ａを第１の基体１上に搭載してもよく、その場合は上記とは逆に、回路基板６ａを第１の基体１上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板６ａ上や第１の基体１の搭載部１ａ上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   The electronic component 6 may be mounted on the electronic component mounting package or the circuit board 6a, or the circuit board 6a may be mounted on the electronic component mounting package by fixing with a low melting point brazing material. For example, when the electronic component 6 is mounted on the circuit board 6a after the circuit board 6a is mounted on the base body 1, a gold-tin (Au—Sn) alloy or gold-germanium (Au—) is used to fix the circuit board 6a. A Ge) alloy is used as a brazing material, and for fixing the electronic component 6, a brazing material of a tin-silver (Sn-Ag) alloy or a tin-silver-copper (Sn-Ag-Cu) alloy having a lower melting point than these, A resin adhesive such as Ag epoxy that can be cured at a temperature lower than the melting point may be used. Further, the circuit board 6a may be mounted on the first base 1 after the electronic component 6 is mounted on the circuit board 6a. In that case, the circuit board 6a is mounted on the first base 1 in the opposite manner. What is necessary is just to make lower the melting point of the brazing material used when mounting on the board. In either case, a brazing paste is printed on the circuit board 6a or the mounting portion 1a of the first base 1 using a known screen printing method, or a brazing material layer is formed by a photolithography method. Or a low melting point brazing preform may be placed.

蓋体９は、平面視で第１の基体１の上面の外周領域の蓋体接合部１ｃの形状に沿った外形で、第１の基体１の上面の搭載部１ａに搭載された電子部品６を覆うような空間を有する形状のものである。電子部品６と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 9 has an external shape along the shape of the lid joint portion 1c in the outer peripheral area of the upper surface of the first base 1 in plan view, and the electronic component 6 mounted on the mounting portion 1a on the top surface of the first base body 1. It is a thing of the shape which has a space which covers. A window that transmits light may be provided in a portion facing the electronic component 6, or an optical fiber and an optical isolator for preventing return light may be joined in place of or in addition to the window.

蓋体９は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金、Ｆｅ−Ｍｎ合金等の金属から成り、これらの板材にプレス加工や打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体９は、第１の基体１の材料と同程度の熱膨張係数を有するものが好ましく、第１の基体１の材料と同じものを用いるのがより好ましい。蓋体９が窓を有する場合は、電子部品６と対向する部分に孔を設けたものに、平板状やレンズ状のガラス製の窓部材を低融点ガラスなどにより接合する。   The lid body 9 is made of a metal such as an Fe—Ni—Co alloy, an Fe—Ni alloy, or an Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal working method such as press working or punching. . The lid 9 preferably has the same thermal expansion coefficient as that of the material of the first base 1, and more preferably the same material as that of the first base 1. When the lid 9 has a window, a plate-like or lens-like glass window member is joined to a member provided with a hole in the portion facing the electronic component 6 with a low melting point glass or the like.

蓋体９の第１の基体１の蓋体接合部１ｃへの接合は、シーム溶接やＹＡＧレーザ溶接等の溶接またはＡｕ−Ｓｎろう材等のろう材によるろう付け等のろう接により行なわれる。   The lid body 9 is joined to the lid joint portion 1c of the first base 1 by welding such as seam welding or YAG laser welding or brazing using a brazing material such as an Au-Sn brazing material.

１・・・・・第１の基体
１ａ・・・・搭載部
１ｂ・・・・第１の貫通孔
１ｃ・・・・蓋体接合部
１ｄ・・・・凹部
２・・・・・第２の基体
２ｂ・・・・第２の貫通孔
３・・・・・封止材
４・・・・・接合材
５・・・・・信号端子
６・・・・・電子部品
６ａ・・・・回路基板
７・・・・・ボンディングワイヤ
８・・・・・接地端子
８ａ・・・・接地封止材
９・・・・・蓋体
10・・・・・溝
11・・・・・絶縁性部材 DESCRIPTION OF SYMBOLS 1 ... 1st base | substrate 1a ...... Mounting part 1b ...... 1st through-hole 1c ...... Lid | joint part 1d ...... Recessed part 2 ... 2nd Base 2b ··· 2nd through hole 3 ··· Sealing material 4 ··· Bonding material 5 ··· Signal terminal 6 ··· Electronic component 6a ··· Circuit board 7 ... Bonding wire 8 ... Grounding terminal 8a ... Grounding sealing material 9 ... Lid
10 ... Groove
11 ・ ・ ・ ・ ・ Insulating material

Claims (4)

上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する第１の貫通孔を有する第１の基体と、
外周部が前記第１の基体の下面に接合された、前記第１の貫通孔に対応して上面から下面にかけて貫通する第２の貫通孔を有する第２の基体と、
前記第２の貫通孔に充填された封止材を貫通して固定され、一端が前記第１の貫通孔を通って前記第１の基体の上面から突出している信号端子とを具備しており、
前記第１の基体および前記第２の基体の少なくとも一方は、前記第１の基体と前記第２の基体との接合部に沿った溝を有しており、
前記第２の基体は、前記第１の基体の前記下面との間に空隙が設けられるように配置されているとともに、前記上面の前記外周部に設けられており前記第１の基体に接合された突出部を有していることを特徴とする電子部品搭載用パッケージ。 A lid joint portion for joining the lid body by welding or brazing to the outer peripheral region of the top surface, and a mounting portion for electronic components penetrating from the top surface to the bottom surface in the inner region of the lid joint portion. A first substrate having one through hole;
A second base having a second through hole penetrating from the upper surface to the lower surface corresponding to the first through hole, the outer peripheral portion being bonded to the lower surface of the first base;
A signal terminal fixed through the sealing material filled in the second through-hole and having one end protruding from the upper surface of the first base through the first through-hole. ,
At least one of the first base and the second base has a groove along a joint portion between the first base and the second base;
The second base is disposed so that a gap is provided between the second base and the lower surface of the first base, and is provided at the outer peripheral portion of the upper face and joined to the first base. An electronic component mounting package characterized by having a protruding portion . 上面の外周領域に溶接またはろう接により蓋体を接合する蓋体接合部を有するとともに、該蓋体接合部の内側領域に、上面に電子部品の搭載部を、および上面から下面にかけて貫通する第１の貫通孔を有する第１の基体と、
外周部が前記第１の基体の下面に接合された、前記第１の貫通孔に対応して上面から下面にかけて貫通する第２の貫通孔を有する第２の基体と、
前記第２の貫通孔に充填された封止材を貫通して固定され、一端が前記第１の貫通孔を通って前記第１の基体の上面から突出している信号端子とを具備しており、
前記第１の基体および前記第２の基体の少なくとも一方は、前記第１の基体と前記第２の基体との接合部に沿った溝を有しており、
前記第２の基体は、前記第１の基体の前記下面との間に空隙が設けられるように配置されており、
前記溝は、前記第１の基体および前記第２の基体のそれぞれに設けられていることを特徴とする電子部品搭載用パッケージ。 A lid joint portion for joining the lid body by welding or brazing to the outer peripheral region of the top surface, and a mounting portion for electronic components penetrating from the top surface to the bottom surface in the inner region of the lid joint portion. A first substrate having one through hole;
A second base having a second through hole penetrating from the upper surface to the lower surface corresponding to the first through hole, the outer peripheral portion being bonded to the lower surface of the first base;
A signal terminal fixed through the sealing material filled in the second through-hole and having one end protruding from the upper surface of the first base through the first through-hole. ,
At least one of the first base and the second base has a groove along a joint portion between the first base and the second base;
The second base is disposed such that a gap is provided between the lower surface and the lower surface of the first base.
The package for mounting electronic parts , wherein the groove is provided in each of the first base and the second base . 前記溝は、前記突出部の側面に設けられていることを特徴とする請求項１に記載の電子部品搭載用パッケージ。 The electronic component mounting package according to claim 1 , wherein the groove is provided on a side surface of the protruding portion . 請求項１乃至請求項３のいずれかに記載の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記蓋体接合部に蓋体を接合したことを特徴とする電子装置。4. An electronic apparatus comprising: an electronic component mounted on the mounting portion of the electronic component mounting package according to claim 1; and a lid body joined to the lid joint portion.
JP2009067512A 2008-05-27 2009-03-19 Electronic component mounting package and electronic device using the same Expired - Fee Related JP5460089B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009067512A JP5460089B2 (en) 2008-05-27 2009-03-19 Electronic component mounting package and electronic device using the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008137523 2008-05-27
JP2008137523 2008-05-27
JP2009067512A JP5460089B2 (en) 2008-05-27 2009-03-19 Electronic component mounting package and electronic device using the same

Publications (2)

Publication Number Publication Date
JP2010010658A JP2010010658A (en) 2010-01-14
JP5460089B2 true JP5460089B2 (en) 2014-04-02

Family

ID=41590737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009067512A Expired - Fee Related JP5460089B2 (en) 2008-05-27 2009-03-19 Electronic component mounting package and electronic device using the same

Country Status (1)

Country Link
JP (1) JP5460089B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9273914B2 (en) 2010-11-29 2016-03-01 Kyocera Corporation Electronic component mounting package and electronic apparatus using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140045A (en) * 1984-07-31 1986-02-26 Nec Kansai Ltd Manufacture of stem by cold pressure welding
JP3513295B2 (en) * 1996-01-10 2004-03-31 新光電気工業株式会社 Stem for hermetic terminal
JP3501695B2 (en) * 1999-07-23 2004-03-02 シャープ株式会社 Semiconductor light emitting device
JP2004087890A (en) * 2002-08-28 2004-03-18 Matsushita Electric Ind Co Ltd Package for electronic component
JP2004235212A (en) * 2003-01-28 2004-08-19 Matsushita Electric Ind Co Ltd Airtight terminal and semiconductor device using the same

Also Published As

Publication number Publication date
JP2010010658A (en) 2010-01-14

Similar Documents

Publication Publication Date Title
JP5537673B2 (en) Electronic component mounting package and electronic device using the same
JP5473583B2 (en) Electronic component mounting package and electronic device using the same
JP5409432B2 (en) Electronic component mounting package and electronic device using the same
JP2016189431A (en) Package for mounting electronic component and electronic component using the same
JP2010062512A (en) Package for mounting electronic component, and electronic apparatus using the same
JP4874298B2 (en) Connection structure between signal terminal and signal line conductor, electronic component mounting package and electronic device
JP2009152520A (en) Connection structure between signal terminal and signal line conductor, electronic component mounting package, and electronic apparatus
JP5004824B2 (en) Connection structure between signal terminal and signal line conductor, electronic component mounting package and electronic device
KR102046347B1 (en) Package for mounting electronic components and electronic devices using the same
JP2010245507A (en) Package for mounting electronic component thereon, and electronic device using the same
JP5312358B2 (en) Electronic component mounting package and electronic device using the same
JP5616178B2 (en) Electronic component mounting package and communication module
JP2009054982A (en) Package for mounting electronic component, and electronic equipment using the same
JP6431441B2 (en) Electronic component mounting package and electronic device using the same
JP5361637B2 (en) Electronic component mounting package and electronic device using the same
JP5460089B2 (en) Electronic component mounting package and electronic device using the same
JP5361609B2 (en) Electronic component mounting package and electronic device
JP5705491B2 (en) Electronic component mounting package and electronic device using the same
WO2017188269A1 (en) Semiconductor package and semiconductor device using same
JP5409456B2 (en) Electronic component mounting package and electronic device using the same
JP2014146756A (en) Electronic component mounting package and electronic device using the same
JP5404484B2 (en) Electronic component mounting package and electronic device using the same
JP2011114104A (en) Sub-mount and electronic device using the same
JP2012227482A (en) Electronic component mounting package and electronic device using the same
JP2009054750A (en) Package for mounting electronic component, and electronic equipment using the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110915

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130214

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131008

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131114

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131217

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140114

R150 Certificate of patent or registration of utility model

Ref document number: 5460089

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees