JP2009054750A - Package for mounting electronic component, and electronic equipment using the same - Google Patents

Package for mounting electronic component, and electronic equipment using the same Download PDF

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JP2009054750A
JP2009054750A JP2007219372A JP2007219372A JP2009054750A JP 2009054750 A JP2009054750 A JP 2009054750A JP 2007219372 A JP2007219372 A JP 2007219372A JP 2007219372 A JP2007219372 A JP 2007219372A JP 2009054750 A JP2009054750 A JP 2009054750A
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electronic component
hole
base body
base
package
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Masahiko Taniguchi
雅彦 谷口
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for mounting electronic components and electronic equipment, capable of preventing air-tightness failures when through-holes for fixing signal terminals are made greater to increase the characteristic impedance. <P>SOLUTION: In a package for mounting electronic components including a joint portion 1b having an upper peripheral area to which a lid 6 is welded or brazed, a base body 1 having a portion 1a to mount electronic components 5 and a plurality of through-holes 1c passing through the base body 1 from its top to the bottom, and signal pins 3a passing through the sealing material 2 filled in the through-holes 1c and fixed thereto, the base body 1 contains a groove 1d between the joint portion 1b and the through-holes 1c on the top of the base body. This groove 1d releases impacts when the lid 6 is mounted on the base body and thermal stresses after jointing and further easily radiates heat generated on the joint portion 1b. Further, this can suppress generation of cracks and separation of the sealing material 2 and assure air-tightness of the package. Consequently, high reliable electronic equipment can be obtained. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、光通信分野等に用いられる光半導体素子等の電子部品を収納するための電子部品搭載用パッケージおよびそれを用いた電子装置に関する。   The present invention relates to an electronic component mounting package for storing electronic components such as optical semiconductor elements used in the field of optical communication and the like, and an electronic apparatus using the same.

近年、40ｋｍ以下の伝送距離における高速通信に対する需要が急激に増加しており、高速大容量の情報伝送に関する研究開発が進められている。とりわけ、光通信装置を用いて光信号を受発信する半導体装置等の電子装置の高速化が注目されており、電子装置による光信号の高出力化と高速化が伝送容量を向上させるための課題として研究開発されている。   In recent years, the demand for high-speed communication at a transmission distance of 40 km or less has increased rapidly, and research and development on high-speed and large-capacity information transmission has been promoted. In particular, increasing speed of electronic devices such as semiconductor devices that receive and transmit optical signals using optical communication devices has been attracting attention, and the issue of increasing the output and speed of optical signals by electronic devices to improve transmission capacity As research and development.

従来の半導体装置に代表される電子装置の光出力は0.2〜0.5ｍＷ程度であり、電子部品として用いられる半導体素子の駆動電力は５ｍＷ程度であった。しかし、より大出力の半導体装置では、光出力が１ｍＷのレベルになってきており、また、半導体素子の駆動電力も10ｍＷ以上が要求されている。さらに、従来の半導体装置による伝送速度は2.5〜10Ｇｂｐｓ程度であったが、近年では25〜40Ｇｂｐｓ程度まで向上してきており、半導体装置をより高出力化させ、高速化させることが要求されている。   The optical output of an electronic device typified by a conventional semiconductor device is about 0.2 to 0.5 mW, and the driving power of a semiconductor element used as an electronic component is about 5 mW. However, in a semiconductor device having a higher output, the optical output has become a level of 1 mW, and the driving power of the semiconductor element is required to be 10 mW or more. Furthermore, although the transmission speed of the conventional semiconductor device is about 2.5 to 10 Gbps, it has been improved to about 25 to 40 Gbps in recent years, and it is required to increase the output of the semiconductor device and increase the speed.

光通信装置に用いられているＬＤ（Laser Diode：レーザダイオード）やＰＤ（Photo Diode：フォトダイオ−ド）等の光半導体素子を含む電子部品を従来の電子部品搭載用パッケージに搭載した電子装置の断面図を図11に示す。   An electronic device in which an electronic component including an optical semiconductor element such as an LD (Laser Diode) or PD (Photo Diode) used in an optical communication device is mounted on a conventional electronic component mounting package. A cross-sectional view is shown in FIG.

従来の電子部品搭載用パッケージは、円板状の金属製の基体11に、基体11の上面から下面にかけて貫通する貫通孔11ｃを設け、この貫通孔11ｃに充填された絶縁性ガラスから成る封止材12を貫通して信号端子13が固定されているものである。また、基体11の下面には、２つの貫通孔11ｃ・11ｃの間に接地端子14が接続されている。この電子部品搭載用パッケージの上面に電子部品15を搭載し、電子部品搭載用パッケージの信号端子13の上端部と電子部品15の端子とをボンディングワイヤ17を介して電気的に接続し、基体11の上面の外周領域に、電子部品15を覆うように金属製の蓋体16を溶接またはろう接により接合部11ｂに接合して気密封止することにより電子装置としていた。また、蓋体16の電子部品15と対向する部分に光ファイバを固定したり、電子部品15と対向する部分に光を透過させる窓を設けたりしたものもある（例えば、特許文献１，特許文献２を参照。）。   In a conventional electronic component mounting package, a disk-shaped metal base 11 is provided with a through-hole 11c penetrating from the upper surface to the lower surface of the base 11, and is sealed with insulating glass filled in the through-hole 11c. The signal terminal 13 is fixed through the material 12. A ground terminal 14 is connected to the lower surface of the base 11 between the two through holes 11c and 11c. The electronic component 15 is mounted on the upper surface of the electronic component mounting package, and the upper end portion of the signal terminal 13 of the electronic component mounting package and the terminal of the electronic component 15 are electrically connected via the bonding wire 17 to form the base body 11. In the outer peripheral area of the upper surface, an electronic device is obtained by joining a metal lid 16 to the joint 11b by welding or brazing so as to cover the electronic component 15 and hermetically sealing. In addition, there is a case in which an optical fiber is fixed to a portion of the lid 16 facing the electronic component 15 or a window for transmitting light is provided in a portion facing the electronic component 15 (for example, Patent Document 1, Patent Document). 2).

また、伝送速度が2.5Ｇｂｐｓ以下の場合は、周辺部品のインピーダンスは25Ωで形成されていたが、高周波化が進むにつれ、周辺部品のインピーダンスが50Ωで形成されるようになっている。ここで、高周波の通る信号端子13のインピーダンスを50Ωにマッチングさせようとすると、貫通孔11ｃの径が、インピーダンスを従来の25Ωで設計した場合に対してほぼ２倍となることがわかっている。そして、貫通孔11ｃの径が大きくなった場合に、貫通孔11ｃ内の信号端子13を電子部品15が搭載された側へ偏心させて固定し、ボンディングワイヤ17の長さを減少させることで伝送損失を少なくすることが行なわれている（例えば、特許文献３を参照。）。
特開2006−179775号公報 特開平８−130266号公報 特開平５−343117号公報 Further, when the transmission speed is 2.5 Gbps or less, the impedance of the peripheral component is 25Ω, but as the frequency increases, the impedance of the peripheral component is 50Ω. Here, it is known that if the impedance of the signal terminal 13 through which the high frequency passes is matched with 50Ω, the diameter of the through hole 11c is almost twice that when the impedance is designed with the conventional 25Ω. When the diameter of the through hole 11c increases, the signal terminal 13 in the through hole 11c is eccentrically fixed to the side on which the electronic component 15 is mounted, and the length of the bonding wire 17 is reduced. The loss is reduced (see, for example, Patent Document 3).
JP 2006-179775 A JP-A-8-130266 JP-A-5-343117

しかしながら、25ＧＨｚ以上の高周波信号で駆動される電子部品15を搭載し、インピーダンスを50Ωにマッチングさせるために信号端子13の通る貫通孔11ｃの径を大きくすると、蓋体16をＹＡＧレーザ溶接，シーム溶接またはろう付け等の溶接で気密封着した場合に、気密不良が発生しやすくなるという問題点があった。   However, if the electronic component 15 driven by a high frequency signal of 25 GHz or more is mounted and the diameter of the through hole 11c through which the signal terminal 13 passes is increased in order to match the impedance to 50Ω, the lid 16 is subjected to YAG laser welding or seam welding. Alternatively, there has been a problem in that airtight defects are likely to occur when airtightly sealed by welding such as brazing.

これは、貫通孔11ｃの径が大きくなることで蓋体16の接合部と貫通孔11ｃとの距離が近付いたので、例えばシーム溶接の場合は主に機械的衝撃が、ろう付けの場合は基体11と蓋体16との熱膨張係数の差による熱応力が接合部11ｂに加わり、これが貫通孔11ｃへ伝わることにより、貫通孔11ｃ内の封止材12にクラックが発生したり、貫通孔11ｃの内壁と封止材12との間や信号端子13と封止材12との間に剥がれが発生したりしてしまうためであると考えられる。また、シーム溶接やＹＡＧレーザ溶接の場合は急激に高温に加熱され、接合部11ｂから貫通孔11ｃまでの距離が短いとその間で熱が拡散しないので貫通孔11ｃの内面もすぐに高温になるのに対して、金属製の基体11に対して熱伝導率の小さいガラス製の封止材12は温度が上昇するのに時間がかかり、両者の間で熱膨張差が生じて貫通孔11ｃの内壁と封止材12との間や信号端子13と封止材12との間に剥がれが発生してしまうと考えられる。   This is because, as the diameter of the through-hole 11c is increased, the distance between the joint portion of the lid 16 and the through-hole 11c is reduced. For example, in the case of seam welding, a mechanical impact is mainly produced. The thermal stress due to the difference in thermal expansion coefficient between the cover 11 and the cover body 16 is applied to the joint 11b, which is transmitted to the through hole 11c, thereby causing cracks in the sealing material 12 in the through hole 11c, or the through hole 11c. This is thought to be due to peeling between the inner wall and the sealing material 12 or between the signal terminal 13 and the sealing material 12. In addition, in the case of seam welding or YAG laser welding, if the distance from the joint 11b to the through hole 11c is short, the heat does not diffuse between them, so the inner surface of the through hole 11c also quickly becomes high. On the other hand, the glass sealing material 12 having a low thermal conductivity with respect to the metal base 11 takes time for the temperature to rise, and a difference in thermal expansion occurs between them, so that the inner wall of the through hole 11c It is considered that peeling occurs between the signal terminal 13 and the sealing material 12 or between the signal terminal 13 and the sealing material 12.

また、接合部11ｂから離すために貫通孔11ｃを基体11の中心側に設けようとすると、２つの貫通孔11ｃ・11ｃの間に接地端子14を設けることができなくなったり位置をずらして設けたりしなければならず、また外部回路と接続される信号端子13・13の下端の間隔が小さくなってしまい、外部回路との接続性が低下してしまう場合があった。逆に、基体11を大きくして接合部11ｂを貫通孔11ｃ・11ｃから離すと、電子部品搭載用パッケージおよび電子装置が大型化してしまい、小型化した電子機器に使用することができなくなってしまう。   Further, if the through hole 11c is provided on the center side of the base 11 so as to be separated from the joint portion 11b, the ground terminal 14 cannot be provided between the two through holes 11c and 11c, or the position is shifted. In addition, the distance between the lower ends of the signal terminals 13 and 13 connected to the external circuit is reduced, and the connectivity with the external circuit may be reduced. On the contrary, if the base 11 is enlarged and the joint 11b is separated from the through holes 11c and 11c, the electronic component mounting package and the electronic device are enlarged, and cannot be used for the downsized electronic apparatus. .

従って、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、特性インピーダンスを大きくして高周波信号を伝送するために信号端子を固定する貫通孔を大きくしても、気密不良が発生しない電子部品搭載用パッケージおよびそれを用いた電子装置を提供することにある。   Therefore, the present invention has been completed in view of the above-described conventional problems, and the purpose thereof is to increase the characteristic impedance and increase the through hole for fixing the signal terminal in order to transmit a high frequency signal. An object of the present invention is to provide an electronic component mounting package that does not cause airtight defects and an electronic device using the same.

本発明の電子部品搭載用パッケージは、上面の外周領域に蓋体を溶接またはろう接により接合する接合部およびその内側に電子部品の搭載部を有するとともに上面から下面にかけて複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記基体は、前記基体の上面の前記接合部と前記貫通孔との間に溝を具備することを特徴とするものである。   The electronic component mounting package according to the present invention has a joint portion for joining a lid body by welding or brazing to the outer peripheral region of the upper surface, and a substrate having a plurality of through holes from the upper surface to the lower surface while having a mounting portion for the electronic component inside thereof. And an electronic component mounting package comprising a signal terminal fixed through the sealing material filled in the through-hole, wherein the base includes the joint on the upper surface of the base and the through-hole. A groove is provided between the two.

また、本発明の電子部品搭載用パッケージは、上記構成において、前記溝は、前記接合部の内周に沿って形成されていることを特徴とするものである。   Moreover, the electronic component mounting package of the present invention is characterized in that, in the above configuration, the groove is formed along an inner periphery of the joint portion.

また、本発明の電子部品搭載用パッケージは、上記構成において、前記溝は、前記複数の貫通孔をそれぞれまたはまとめて取り囲むように形成されていることを特徴とするものである。   The electronic component mounting package of the present invention is characterized in that, in the above configuration, the groove is formed so as to surround each of the plurality of through holes or collectively.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記接合部に蓋体を接合したことを特徴とするものである。   An electronic device according to the present invention is characterized in that an electronic component is mounted on the mounting portion of the electronic component mounting package according to any one of the above-described configurations, and a lid is bonded to the bonding portion of the base. Is.

本発明の電子部品搭載用パッケージによれば、基体は、基体の上面の接合部と貫通孔との間に溝を具備していることから、貫通孔の径を大きくして蓋体を基体の上面の外周部の接合部に溶接またはろう接により接合したとしても、接合時の衝撃や接合後の熱応力が接合部と貫通孔との間の溝によって緩和される。また、接合部で発生した熱が放散しやすくなり、貫通孔内の封止材にクラックが入ったり封止材と信号端子や貫通孔の内壁面との間で剥がれが生じたりすることがなくなる。従って、気密性が損なわれることのない高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   According to the electronic component mounting package of the present invention, since the base has a groove between the joint portion on the upper surface of the base and the through hole, the diameter of the through hole is increased and the lid is attached to the base. Even if it joins to the junction part of the outer peripheral part of an upper surface by welding or brazing, the impact at the time of joining and the thermal stress after joining are relieve | moderated by the groove | channel between a junction part and a through-hole. In addition, heat generated at the joint is easily dissipated, and the sealing material in the through hole is not cracked or peeled off between the sealing material and the signal terminal or the inner wall surface of the through hole. . Therefore, the electronic component mounting package can provide a highly reliable electronic device that does not impair hermeticity.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、溝が接合部の内周に沿って形成されている場合には、蓋体を接合した際の熱応力を基体の外周に近い部分で緩和することができるので、封止材にクラックや剥がれが生じたりすることがなく、気密性が損なわれることがなくなる。また、基体の上面が大きく反ることがなく、基体の上面の搭載部も平坦に保たれるので、電子部品と搭載部との接合部に応力が加わることがなくなる。従って、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   Further, according to the electronic component mounting package of the present invention, in the above configuration, when the groove is formed along the inner periphery of the joint, the thermal stress when the lid is joined is applied to the outer periphery of the base body. Since it can be relaxed in the vicinity, the sealing material is not cracked or peeled off, and the airtightness is not impaired. Further, the upper surface of the base body is not greatly warped, and the mounting portion on the upper surface of the base body is kept flat, so that stress is not applied to the joint portion between the electronic component and the mounting portion. Accordingly, the electronic component mounting package can provide a highly reliable electronic device.

また、本発明の電子部品搭載用パッケージによれば、上記構成において、溝が複数の貫通孔をそれぞれまたはまとめて取り囲むように形成されている場合には、貫通孔（封止材）の周囲の基体が薄いものとなり、剛性が低く熱容量が小さくなるので、貫通孔の周囲が変形しやすくなるとともに、伝わる熱量が小さくなるので、封止材にクラックや剥がれがより生じにくくなる。従って、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   According to the electronic component mounting package of the present invention, in the above configuration, when the groove is formed so as to surround each of the plurality of through holes or collectively, the periphery of the through hole (sealing material) is provided. Since the base is thin, the rigidity is low and the heat capacity is small, the periphery of the through hole is easily deformed, and the amount of heat transmitted is small, so that the sealing material is less likely to be cracked or peeled off. Accordingly, the electronic component mounting package can provide a highly reliable electronic device.

本発明の電子装置は、上記構成の本発明の電子部品搭載用パッケージの搭載部に電子部品を搭載するとともに、基体の接合部に蓋体を接合したことから、貫通孔の径が大きい場合であっても、接合時の衝撃や接合後の熱応力が接合部と貫通孔との間の溝によって緩和される。また、接合部で発生した熱が放散しやすくなり、蓋体を基板の上面の外周部に溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることのなくなる。従って、気密性に優れた高信頼性の電子装置となる。   In the electronic device of the present invention, the electronic component is mounted on the mounting portion of the electronic component mounting package of the present invention configured as described above, and the lid is bonded to the bonding portion of the base body. Even if it exists, the impact at the time of joining and the thermal stress after joining are relieved by the groove | channel between a junction part and a through-hole. In addition, heat generated at the joining portion is easily dissipated, and the airtightness is not impaired by impact or thermal stress after joining when the lid is joined to the outer peripheral portion of the upper surface of the substrate by welding or brazing. Therefore, a highly reliable electronic device having excellent airtightness is obtained.

本発明の電子部品搭載用パッケージおよびそれを用いた電子装置について、添付の図面を参照しつつ詳細に説明する。   An electronic component mounting package and an electronic apparatus using the same according to the present invention will be described in detail with reference to the accompanying drawings.

図１，図３，図５，図７および図９はそれぞれ本発明の電子搭載用パッケージの実施の形態の一例を示す斜視図であり、図２，図４，図６，図８および図10はそれぞれ図１，図３，図５，図７および図９におけるＡ−Ａ線で切断した断面の一例を示す断面図である。   1, FIG. 3, FIG. 5, FIG. 7 and FIG. 9 are perspective views showing examples of embodiments of the electronic mounting package of the present invention, respectively. FIG. 10 is a cross-sectional view showing an example of a cross section taken along line AA in FIGS. 1, 3, 5, 7, and 9.

図１〜図10において、１は基体、１ａは搭載部、１ｂは接合部、１ｃは貫通孔、１ｄは溝、２は封止材、３は信号端子、４は接地端子、５は電子部品、５ａは電子部品を搭載する回路基板、６は蓋体、７はボンディングワイヤ、８は接合材である。   1 to 10, 1 is a base, 1a is a mounting portion, 1b is a joint portion, 1c is a through hole, 1d is a groove, 2 is a sealing material, 3 is a signal terminal, 4 is a ground terminal, and 5 is an electronic component. 5a is a circuit board on which electronic components are mounted, 6 is a lid, 7 is a bonding wire, and 8 is a bonding material.

図１〜図４に示す例では、基体１の上面に直接電子部品５が搭載されてボンディングワイヤ７で信号端子３・３の上端部と電子部品５とが接続されている。また、図５〜図10に示す例では、基体１の上面から突出した突出部を搭載部として、その側面に回路基板５ａを介して電子部品５が搭載され、電子部品５はボンディングワイヤ７で回路基板５ａ上の配線に接続され、さらに信号端子３・３の端部と回路基板５ａ上の配線とはろう材等の接合材８で接続されている。さらに、図２，図４，図６，図８および図10に示すように、破線で示すような蓋体６を接合部１ｂに接合することにより、本発明の電子装置が基本的に構成される。   In the example shown in FIGS. 1 to 4, the electronic component 5 is mounted directly on the upper surface of the substrate 1, and the upper ends of the signal terminals 3 and 3 are connected to the electronic component 5 by the bonding wires 7. In the example shown in FIGS. 5 to 10, the protruding part protruding from the upper surface of the substrate 1 is used as the mounting part, and the electronic component 5 is mounted on the side surface via the circuit board 5 a, and the electronic component 5 is a bonding wire 7. It is connected to the wiring on the circuit board 5a, and the ends of the signal terminals 3 and 3 and the wiring on the circuit board 5a are connected by a bonding material 8 such as a brazing material. Further, as shown in FIG. 2, FIG. 4, FIG. 6, FIG. 8, and FIG. 10, the electronic device of the present invention is basically configured by joining the lid 6 as shown by the broken line to the joint 1b. The

本発明の電子部品搭載用パッケージは、上面の外周領域に蓋体６を溶接またはろう接により接合する接合部１ｂおよびその内側に電子部品５の搭載部１ａを有するとともに上面から下面にかけて複数の貫通孔１ｃ・１ｃを有する基体１と、貫通孔１ｃに充填された封止材２を貫通して固定された信号端子３とを具備した電子部品搭載用パッケージであって、基体１は、基体１の上面の接合部１ｂと貫通孔１ｃとの間に溝１ｄを具備することを特徴とするものである。   The electronic component mounting package of the present invention has a joint portion 1b for joining the lid 6 to the outer peripheral region of the upper surface by welding or brazing and a mounting portion 1a for the electronic component 5 inside thereof, and a plurality of penetrations from the upper surface to the lower surface. An electronic component mounting package including a base body 1 having holes 1c and 1c and a signal terminal 3 fixed through a sealing material 2 filled in the through-hole 1c. A groove 1d is provided between the joint 1b and the through hole 1c on the upper surface of the substrate.

このことから、貫通孔１ｃ・１ｃの径を大きくして蓋体６を基体１の上面の外周部の接合部１ｂに溶接またはろう接により接合したとしても、接合時の衝撃や接合後の熱応力が接合部１ｂと貫通孔１ｃとの間の溝１ｄによって緩和される。また、接合部１ｂで発生した熱が拡散しやすくなり、貫通孔１ｃ内の封止材２にクラックが入ったり封止材２と信号端子３や貫通孔１ｃの内壁面との間で剥がれが生じたりすることがなくなる。従って、気密性が損なわれることのない高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   Therefore, even when the diameter of the through holes 1c and 1c is increased and the lid body 6 is joined to the joint portion 1b on the outer peripheral portion of the upper surface of the base body 1 by welding or brazing, the impact at the time of joining and the heat after joining The stress is relieved by the groove 1d between the joint 1b and the through hole 1c. Further, the heat generated at the joint 1b is easily diffused, and the sealing material 2 in the through hole 1c is cracked or peeled off between the sealing material 2 and the signal terminal 3 or the inner wall surface of the through hole 1c. It will never occur. Therefore, the electronic component mounting package can provide a highly reliable electronic device that does not impair hermeticity.

また、図１および図５に示す例のように、本発明の電子部品搭載用パッケージは、上記構成において、溝１ｄは接合部１ｂの内周に沿って形成されているのが好ましい。これにより、蓋体６を接合した際の熱応力を基体１の外周に近い部分で緩和することができるので、封止材２にクラックや剥がれが生じたりすることがなく気密性が損なわれることがなくなる。また、基体１の上面が大きく反ることがなく基体１の上面の搭載部１ａも平坦に保たれるので、電子部品５と搭載部１ａとの接合部に応力が加わることがなくなる。従って、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   Further, as in the example shown in FIGS. 1 and 5, in the electronic component mounting package of the present invention, in the above configuration, the groove 1d is preferably formed along the inner periphery of the joint 1b. Thereby, since the thermal stress at the time of joining the cover body 6 can be relieved in the part close | similar to the outer periphery of the base | substrate 1, airtightness is impaired without a crack or peeling arising in the sealing material 2. Disappears. Further, since the upper surface of the base 1 is not greatly warped and the mounting portion 1a on the upper surface of the base 1 is kept flat, no stress is applied to the joint between the electronic component 5 and the mounting portion 1a. Accordingly, the electronic component mounting package can provide a highly reliable electronic device.

また、本発明の電子部品搭載用パッケージは、上記構成において、溝１ｄは、図３および図７に示す例のように、複数の貫通孔１ｃ・１ｃをそれぞれ取り囲むように、または図９に示す例のように、複数の貫通孔１ｃ・１ｃをまとめて取り囲むように形成されているのが好ましい。これにより、貫通孔１ｃ（封止材２）の周囲の基体１が薄いものとなり、剛性が低く熱容量が小さくなるので、貫通孔１ｃの周囲が変形しやすく、伝わる熱量が小さくなるので、封止材２にクラックや剥がれがより生じにくくなる。従って、より高信頼性の電子装置を得ることができる電子部品搭載用パッケージとなる。   Further, in the electronic component mounting package of the present invention, in the above configuration, the groove 1d surrounds the plurality of through holes 1c and 1c as shown in FIGS. 3 and 7, or is shown in FIG. As in the example, it is preferable that the plurality of through holes 1c and 1c are formed so as to surround them collectively. As a result, the substrate 1 around the through hole 1c (sealing material 2) becomes thin, and the rigidity is low and the heat capacity is small. Therefore, the periphery of the through hole 1c is easily deformed, and the amount of heat transmitted is small. The material 2 is less likely to be cracked or peeled off. Accordingly, the electronic component mounting package can provide a highly reliable electronic device.

本発明の電子装置は、上記構成のいずれかの本発明の電子部品搭載用パッケージの搭載部１ａに電子部品５を搭載するとともに、基体１の接合部１ｂに蓋体６を接合したことを特徴とするものである。このことにより、貫通孔１ｃの径が大きい場合であっても、接合時の衝撃や接合後の熱応力が接合部１ｂと貫通孔１ｃとの間の溝１ｄによって緩和され、また、接合部１ｂで発生した熱が放散しやすくなり、蓋体６を基体１の上面の外周部の接合部１ｂに溶接またはろう接により接合したときの衝撃や接合後の熱応力により気密性が損なわれることがないので、気密性に優れた、高信頼性の電子装置となる。   The electronic device of the present invention is characterized in that the electronic component 5 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention having any of the above-described configurations, and the lid body 6 is bonded to the bonding portion 1b of the base body 1. It is what. As a result, even when the diameter of the through hole 1c is large, the impact at the time of joining and the thermal stress after joining are alleviated by the groove 1d between the joint 1b and the through hole 1c, and the joint 1b. The heat generated in the process is easily dissipated, and the airtightness is impaired by the impact or thermal stress after joining when the lid 6 is joined to the joint 1b on the outer periphery of the base 1 by welding or brazing. Therefore, the electronic device is excellent in airtightness and highly reliable.

基体１は、上面の中央部に電子部品５の搭載部１ａを有するとともに搭載された電子部品５が発生する熱をパッケージの外部に放散する機能を有する。このため、基体１は、熱伝導性の良い金属から成り、搭載される電子部品５やセラミック製の回路基板５ａの熱膨張係数に近いものやコストの安いものとして、例えば、Ｆｅ99.6質量％−Ｍｎ0.4質量％系のＳＰＣ（Steel Plate Cold）材や、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｍｎ合金等から選ばれる。例えば基体１がＦｅ−Ｍｎ合金から成る場合は、このインゴット（塊）に圧延加工や打ち抜き加工等の周知の金属加工方法を施すことによって所定形状に製作され、貫通孔１ｃはドリル加工や金型による打ち抜き加工により形成される。また、基体１が搭載部１ａとして突出部を有する形状の場合は、切削加工やプレス加工することにより形成することができる。   The substrate 1 has a mounting portion 1a for the electronic component 5 at the center of the upper surface and has a function of radiating heat generated by the mounted electronic component 5 to the outside of the package. For this reason, the base 1 is made of a metal having good thermal conductivity, and is close to the thermal expansion coefficient of the electronic component 5 or the ceramic circuit board 5a to be mounted or has a low cost. For example, Fe 99.6% by mass -Mn 0.4 mass% SPC (Steel Plate Cold) material, Fe-Ni-Co alloy, Fe-Mn alloy, or the like. For example, when the substrate 1 is made of an Fe—Mn alloy, the ingot (lumb) is manufactured in a predetermined shape by applying a known metal processing method such as rolling or punching, and the through-hole 1c is formed by drilling or molding. It is formed by punching. Moreover, when the base | substrate 1 is a shape which has a protrusion part as the mounting part 1a, it can form by cutting or pressing.

基体１の形状は、通常は厚みが0.5〜２ｍｍの平板状であり、その形状は特に制限はないが、例えば直径が３〜10ｍｍの円板状，半径が1.5〜８ｍｍの円周の一部を切り取った半円板状，一辺が３〜15ｍｍの四角板状等であり、上面から下面にかけてほぼ垂直に形成された直径が0.6〜2.65ｍｍの貫通孔１ｃを複数有する。図１〜図10に示す例では、２つの貫通孔１ｃを有する基体１に１個の電子部品５を搭載しているが、複数の電子部品５を搭載したり、電子部品５の数や電子部品５の端子の数に応じて信号端子３を固定する貫通孔１ｃを２つより多く形成したりしても構わない。   The shape of the substrate 1 is usually a flat plate having a thickness of 0.5 to 2 mm, and the shape is not particularly limited, but for example, a disk having a diameter of 3 to 10 mm and a part of a circumference having a radius of 1.5 to 8 mm. A plurality of through-holes 1c having a diameter of 0.6 to 2.65 mm formed substantially vertically from the upper surface to the lower surface. In the example shown in FIGS. 1 to 10, one electronic component 5 is mounted on the base 1 having two through holes 1 c, but a plurality of electronic components 5 are mounted, the number of electronic components 5 and the number of electronic components 5 Depending on the number of terminals of the component 5, more than two through holes 1c for fixing the signal terminals 3 may be formed.

基体１の厚みは0.5ｍｍ以上２ｍｍ以下が好ましい。基体１の厚みが0.5ｍｍ未満の場合は、電子部品５を保護するための金属製の蓋体６を金属製の基体１の上面に接合する際に、接合温度等の接合条件により基体１が曲がったりして変形し易くなる。一方、基体１の厚みが２ｍｍを超えると、電子部品搭載用パッケージや電子装置の厚みが不要に厚いものとなり、小型化し難くなる。   The thickness of the substrate 1 is preferably 0.5 mm or more and 2 mm or less. When the thickness of the substrate 1 is less than 0.5 mm, when the metal lid 6 for protecting the electronic component 5 is bonded to the upper surface of the metal substrate 1, the substrate 1 is bonded according to bonding conditions such as a bonding temperature. It becomes easy to bend and deform. On the other hand, if the thickness of the substrate 1 exceeds 2 mm, the thickness of the electronic component mounting package or the electronic device becomes unnecessarily thick, and it is difficult to reduce the size.

基体１の上面の溝１ｄは、基体１の上面の接合部１ｂと貫通孔１ｃとの間のうち、少なくとも貫通孔１ｃと接合部１ｂとの距離が最も近い部分を含む領域に形成すれば、接合部１ｂと貫通孔１ｃとの距離が近く接合時の衝撃や熱応力あるいは急激な加熱による封止剤２のクラックや剥がれの発生を抑えることができるのでよい。より好ましくは、上述したように接合部１ｂの内周に沿って、あるいは複数の貫通孔１ｃ・１ｃをそれぞれまたはまとめて取り囲むように形成するとよく、これら全ての位置に形成してもよい。溝１ｄは、切削加工，エッチング加工，レーザ加工，プレス加工等の加工方法によって形成することができる。   If the groove 1d on the upper surface of the base body 1 is formed in a region including at least the portion where the distance between the through hole 1c and the joint portion 1b is the shortest between the joint portion 1b and the through hole 1c on the upper surface of the base body 1, The distance between the joint portion 1b and the through-hole 1c is short, and the occurrence of cracks and peeling of the sealant 2 due to impact, thermal stress, or rapid heating during joining may be suppressed. More preferably, it may be formed along the inner periphery of the joint 1b as described above, or so as to surround each of the plurality of through holes 1c and 1c, or may be formed at all these positions. The groove 1d can be formed by a processing method such as cutting, etching, laser processing, or press processing.

溝１ｄの深さは、深いほど蓋体６の接合時の衝撃や熱応力を緩和しやすく、熱伝導距離が長くなり、表面積が増して放熱性が向上するので好ましいが、基体１が変形しやすくなりすぎるので、基体１の大きさにもよるが基体１の厚みの１／４〜２／３程度の深さとすればよい。   The depth of the groove 1d is preferably as the depth is deeper, because it is easier to relieve shock and thermal stress when the lid 6 is joined, the heat conduction distance becomes longer, the surface area is increased, and the heat dissipation is improved. Since it becomes too easy, although it depends on the size of the substrate 1, the depth may be about 1/4 to 2/3 of the thickness of the substrate 1.

溝１ｄの幅は、接合時の衝撃や熱応力を緩和して熱伝導を抑える幅があればよく、この点からは広い方が、製品の小型化の観点からは狭い方が好ましいが、0.1ｍｍ程度以上あればよい。   The width of the groove 1d only needs to have a width that reduces the impact and thermal stress during bonding and suppresses heat conduction. From this viewpoint, a wider width is preferable, but a smaller width is preferable from the viewpoint of miniaturization of the product. What is necessary is just about mm or more.

溝１ｄの縦断面形状は、Ｖ字型（逆三角形状）やＵ字型（半円形状）等、特に制限はなく、接合部１ｂから貫通孔１ｃへの熱伝導距離を大きくするには、例えば図２に示す四角形状のように、溝１ｄの対向する内側壁が平行にまたは広がるような形状が好ましい。また、例えば図２に示すように、基体１の上面に対して垂直に形成してもよいが、例えば図10に示すように、上面に対して斜めに形成すると熱伝導距離が長くなるので好ましい。   The longitudinal sectional shape of the groove 1d is not particularly limited, such as a V shape (inverted triangle shape) or a U shape (semicircular shape). To increase the heat conduction distance from the joint 1b to the through hole 1c, For example, a shape in which the opposed inner side walls of the groove 1d are parallel or wide, such as a square shape shown in FIG. For example, as shown in FIG. 2, it may be formed perpendicular to the upper surface of the substrate 1, but it is preferable to form it obliquely with respect to the upper surface, for example, as shown in FIG. .

また、基体１の表面には、耐食性に優れ、電子部品５や回路基板５ａあるいは蓋体６を接合し固定するためのろう材との濡れ性に優れた、厚さが0.5〜９μｍのＮｉ層と厚さが0.5〜５μｍのＡｕ層とをめっき法により順次被着させておくのがよい。これにより、基体１が酸化腐食するのを有効に防止できるとともに電子部品５や回路基板５ａあるいは蓋体６を基体１に良好にろう付けすることができる。   Further, on the surface of the substrate 1, a Ni layer having a thickness of 0.5 to 9 [mu] m having excellent corrosion resistance and excellent wettability with a brazing material for joining and fixing the electronic component 5, the circuit board 5a or the lid body 6. And an Au layer having a thickness of 0.5 to 5 μm are preferably sequentially deposited by a plating method. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and to braze the electronic component 5, the circuit board 5 a, or the lid body 6 to the base body 1 satisfactorily.

基体１に形成された貫通孔１ｃには、封止材２が充填されており、この封止材２を貫通して信号端子３が固定されている。信号端子３は、一方の端部（上端部）は基体１の上面と面一とするか、あるいは２ｍｍ程度まで突出させ、他方の端部（下端部）は基体１の下面から１〜20ｍｍ程度突出させて固定される。例えば、図１〜図４に示す例のように、信号端子３の上端部と電子部品５（または電子部品５が搭載された回路基板５ａ）とをボンディングワイヤ７を介して電気的に接続する場合は、信号端子３の上端部は必ずしも基体１の上面から突出していなくてもよい。一方、信号端子３の下端部は、外部電気回路（図示せず）に接続するために基体１の下面から突出しているのが好ましい。例えば、図１〜図４に示す例のように、信号端子３の上端部と電子部品５とを電気的に接続するとともに、信号端子３の下端部を外部電気回路（図示せず）に電気的に接続することにより、信号端子３は電子部品５と外部電気回路との間の入出力信号を伝送する機能を果たす。   A through hole 1 c formed in the base 1 is filled with a sealing material 2, and the signal terminal 3 is fixed through the sealing material 2. The signal terminal 3 has one end portion (upper end portion) flush with the upper surface of the base body 1 or protrudes to about 2 mm, and the other end portion (lower end portion) from the lower surface of the base body 1 to about 1 to 20 mm. It is fixed by protruding. For example, as in the example illustrated in FIGS. 1 to 4, the upper end portion of the signal terminal 3 and the electronic component 5 (or the circuit board 5 a on which the electronic component 5 is mounted) are electrically connected via the bonding wire 7. In this case, the upper end portion of the signal terminal 3 does not necessarily protrude from the upper surface of the base body 1. On the other hand, it is preferable that the lower end portion of the signal terminal 3 protrudes from the lower surface of the base 1 in order to connect to an external electric circuit (not shown). For example, as in the example shown in FIGS. 1 to 4, the upper end portion of the signal terminal 3 and the electronic component 5 are electrically connected, and the lower end portion of the signal terminal 3 is electrically connected to an external electric circuit (not shown). Thus, the signal terminal 3 functions to transmit an input / output signal between the electronic component 5 and the external electric circuit.

封止材２は、ガラスやセラミックスなどの絶縁性の無機材料から成り、信号端子３と基体１との絶縁間隔を確保するとともに、信号端子３を基体１の貫通孔１ｃ内に固定する機能を有する。このような封止材２の例としては、ホウケイ酸ガラス，ソーダガラス等のガラスおよびこれらのガラスに封止材２の熱膨張係数や比誘電率を調整するためのセラミックフィラーを加えたものが挙げられ、インピーダンスマッチングのためにその比誘電率を適宜選択する。比誘電率を低下させるフィラーとしては、酸化リチウム等が挙げられる。例えば、特性インピーダンスを50Ωとするには、貫通孔１ｃの内径が1.75ｍｍで信号端子３の外径が0.2ｍｍの場合、あるいは貫通孔１ｃの内径が2.2ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が6.8であるものを用いればよい。また、貫通孔１ｃの内径が1.65ｍｍで信号端子３の外径が0.25ｍｍの場合であれば、封止材２の比誘電率が５であるものを用いればよい。   The sealing material 2 is made of an insulating inorganic material such as glass or ceramics, and has a function of securing an insulation interval between the signal terminal 3 and the base 1 and fixing the signal terminal 3 in the through hole 1 c of the base 1. Have. Examples of such a sealing material 2 include glass such as borosilicate glass and soda glass, and a glass filler added with a ceramic filler for adjusting the thermal expansion coefficient and relative dielectric constant of the sealing material 2. The relative dielectric constant is appropriately selected for impedance matching. Examples of the filler that lowers the dielectric constant include lithium oxide. For example, in order to set the characteristic impedance to 50Ω, the inner diameter of the through hole 1c is 1.75 mm and the outer diameter of the signal terminal 3 is 0.2 mm, or the inner diameter of the through hole 1c is 2.2 mm and the outer diameter of the signal terminal 3 is 0.25. In the case of mm, the sealing material 2 having a relative dielectric constant of 6.8 may be used. Further, when the inner diameter of the through hole 1c is 1.65 mm and the outer diameter of the signal terminal 3 is 0.25 mm, the sealing material 2 having a relative dielectric constant of 5 may be used.

信号端子３は、Ｆｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金等の金属から成り、例えば信号端子３がＦｅ−Ｎｉ−Ｃｏ合金から成る場合は、このインゴット（塊）に圧延加工や打ち抜き加工等の周知の金属加工方法を施すことによって、長さが1.5〜22ｍｍで直径が0.1〜１ｍｍの線状に製作される。信号端子３の強度を確保しながらより高いインピーダンスでのマッチングを行ないつつ小型にするには、信号端子３の直径は0.15〜0.25ｍｍが好ましい。信号端子３の直径が0.15ｍｍより細くなると、電子部品搭載用パッケージを実装する場合の取り扱いで信号端子３が曲がりやすくなり、作業性が低下しやすくなる。また、直径が0.25ｍｍより太くなると、インピーダンス整合させた場合の貫通孔１ｃの径が信号端子３の径に伴い大きくなるので、製品の小型化に向かないものとなってしまう。   The signal terminal 3 is made of a metal such as Fe-Ni-Co alloy or Fe-Ni alloy. For example, when the signal terminal 3 is made of Fe-Ni-Co alloy, the ingot (lumb) is rolled or punched. By applying the known metal processing method, a wire having a length of 1.5 to 22 mm and a diameter of 0.1 to 1 mm is manufactured. In order to reduce the size of the signal terminal 3 while ensuring the strength of the signal terminal 3 while performing matching with a higher impedance, the diameter of the signal terminal 3 is preferably 0.15 to 0.25 mm. When the diameter of the signal terminal 3 is smaller than 0.15 mm, the signal terminal 3 is easily bent by handling when the electronic component mounting package is mounted, and the workability is easily lowered. On the other hand, if the diameter is larger than 0.25 mm, the diameter of the through hole 1c when impedance matching is increased with the diameter of the signal terminal 3, which is not suitable for downsizing of the product.

信号端子３を貫通孔１ｃに充填された封止材２を貫通して固定するには、例えば、封止材２がガラスから成る場合は、周知の粉体プレス法や押し出し成形法を用いてガラス粉末を成形して、内径を信号端子３の外径に合わせ、外径を貫通孔１ｃの内径に合わせた筒状の成形体を作製し、この封止材２の成形体を貫通孔１ｃに挿入し、さらに信号端子３をこの封止材２の孔に挿通し、しかる後、所定の温度に加熱して封止材２を溶融させた後、冷却して固化させることにより行なうことができる。これにより、封止材２により貫通孔１ｃが気密に封止されるとともに、封止材２によって信号端子３が基体１と絶縁されて固定され、同軸線路が形成される。   To fix the signal terminal 3 through the sealing material 2 filled in the through hole 1c, for example, when the sealing material 2 is made of glass, a known powder pressing method or extrusion molding method is used. A glass powder is molded to make a cylindrical molded body whose inner diameter is matched with the outer diameter of the signal terminal 3 and whose outer diameter is matched with the inner diameter of the through hole 1c, and this molded body of the sealing material 2 is made into the through hole 1c. Then, the signal terminal 3 is inserted into the hole of the sealing material 2 and then heated to a predetermined temperature to melt the sealing material 2 and then cooled and solidified. it can. Accordingly, the through hole 1c is hermetically sealed by the sealing material 2, and the signal terminal 3 is insulated and fixed from the base body 1 by the sealing material 2, thereby forming a coaxial line.

また、図１〜図10に示す例のように、信号端子３は貫通孔１ｃの中心を通っていることが好ましい。このことにより、基体１の下面から上面にかけての全ての領域で信号端子３と貫通孔１ｃの内壁面との距離が同じになるので、この領域においてインピーダンスの変動がなく一定となり、伝送損失が少なく高周波信号の通過特性がより良好なものとなる。   Moreover, it is preferable that the signal terminal 3 passes through the center of the through hole 1c as in the example shown in FIGS. As a result, the distance between the signal terminal 3 and the inner wall surface of the through-hole 1c is the same in all regions from the lower surface to the upper surface of the substrate 1, so that there is no fluctuation in impedance in this region and transmission loss is small. A high-frequency signal has better pass characteristics.

また、図５〜図９に示す例のように、搭載部１ａは、基体１の上面から突出した突出部の側面に搭載面を有し、信号端子３の上面から突出した端部が搭載面に沿っていることが好ましい。これにより、信号端子３の端部が搭載部１ａに搭載された電子部品５や電子部品５が搭載された回路基板５ａの主面に沿うこととなり、ろう接による信号端子３の端部と電子部品５の電極や回路基板５ａの主面上の配線との接続を行なうのが容易となるので、信号端子３の端部と電子部品５や回路基板５ａの主面上の配線との接続をワイヤボンディング等で行なう場合に比較して、信号線路と接地面である搭載面との間の浮遊容量を小さくすることができるものとなり、より電気特性に優れた電子部品搭載用パッケージとなる。図５〜図９に示す例では、搭載部１ａは基体１の上面に対して垂直な突出部の側面に搭載面を形成し、貫通孔１ｃ・１ｃを基体１の上面に対して垂直に形成して信号端子３・３も基体１の上面に対して垂直になるように固定し、２つの信号端子３・３の基体１の上面から突出した端部を結ぶ線が搭載部１ａの搭載面に平行となるようにすることで、信号端子３の上面から突出した端部が搭載面に沿うようにしている。   5 to 9, the mounting portion 1a has a mounting surface on the side surface of the protruding portion protruding from the upper surface of the base 1, and the end portion protruding from the upper surface of the signal terminal 3 is the mounting surface. It is preferable that it is along. As a result, the end of the signal terminal 3 extends along the main surface of the electronic component 5 mounted on the mounting portion 1a or the circuit board 5a on which the electronic component 5 is mounted. Since it becomes easy to connect the electrode of the component 5 and the wiring on the main surface of the circuit board 5a, the end of the signal terminal 3 and the wiring on the main surface of the electronic component 5 or the circuit board 5a are connected. As compared with the case where wire bonding or the like is performed, the stray capacitance between the signal line and the mounting surface which is the ground surface can be reduced, and the electronic component mounting package having more excellent electrical characteristics can be obtained. In the example shown in FIGS. 5 to 9, the mounting portion 1 a forms a mounting surface on the side surface of the protrusion perpendicular to the upper surface of the base body 1, and the through holes 1 c and 1 c are formed perpendicular to the upper surface of the base body 1. Then, the signal terminals 3 and 3 are also fixed so as to be perpendicular to the upper surface of the base 1, and a line connecting the ends of the two signal terminals 3 and 3 protruding from the upper surface of the base 1 is a mounting surface of the mounting portion 1 a. So that the end protruding from the upper surface of the signal terminal 3 is along the mounting surface.

接地端子４は、信号端子３と同じ様にして製作され、基体１の下面にろう材等を用いて接合される。図２に示す例のように、位置決めの容易性と接合強度の向上のために、予め基体１の下面に穴を形成しておき、その穴に接地端子４を挿入して接合してもよい。また、同様の理由で、図２に示す例のように、基体１の下面に当接するように接地端子４に鍔をつけて、接合面積をより大きくしてもよい。このようにして基体１に接地端子４を接合することにより、接続端子４を外部電気回路に接続した際には、基体１が接地導体としても機能する。   The ground terminal 4 is manufactured in the same manner as the signal terminal 3 and is joined to the lower surface of the base 1 using a brazing material or the like. As in the example shown in FIG. 2, in order to facilitate positioning and improve the bonding strength, a hole may be formed in the lower surface of the base 1 in advance, and the ground terminal 4 may be inserted into the hole for bonding. . Further, for the same reason, as in the example shown in FIG. 2, the grounding terminal 4 may be provided with a ridge so as to come into contact with the lower surface of the base 1 to increase the bonding area. By joining the ground terminal 4 to the base body 1 in this way, the base body 1 also functions as a ground conductor when the connection terminal 4 is connected to an external electric circuit.

このような本発明の電子部品搭載用パッケージの搭載部１ａに電子部品５を搭載するとともに、基体１の接合部１ｂに蓋体６を接合することにより、本発明の電子装置となる。   The electronic component 5 is mounted on the mounting portion 1a of the electronic component mounting package of the present invention, and the lid 6 is bonded to the bonding portion 1b of the base body 1, whereby the electronic device of the present invention is obtained.

電子部品搭載用パッケージに電子部品５を搭載して電気的に接続するには、上述したように、図１に示す例のように基体１の上面に直接電子部品５を搭載して接続する方法や、図３に示す例のように回路基板５ａを介して電子部品５を搭載して接続する方法などがある。   In order to mount and electrically connect the electronic component 5 to the electronic component mounting package, as described above, a method of mounting and connecting the electronic component 5 directly on the upper surface of the base 1 as in the example shown in FIG. Alternatively, there is a method of mounting and connecting the electronic component 5 via the circuit board 5a as in the example shown in FIG.

電子部品５としては、ＬＤ（レーザーダイオード）やＰＤ（フォトダイオ−ド）等の光半導体素子，半導体集積回路素子を含む半導体素子，水晶振動子や弾性表面波素子等の圧電素子，圧力センサー素子，容量素子，抵抗器等が挙げられる。   Examples of the electronic component 5 include optical semiconductor elements such as LD (laser diode) and PD (photodiode), semiconductor elements including semiconductor integrated circuit elements, piezoelectric elements such as crystal resonators and surface acoustic wave elements, and pressure sensor elements. , Capacitive elements, resistors and the like.

回路基板５は、酸化アルミニウム（アルミナ：Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体等のセラミックス絶縁材料等から成る絶縁基板に配線導体が形成されたものである。絶縁基板が例えば酸化アルミニウム質焼結体から成る場合であれば、まずアルミナ（Ａｌ２Ｏ３）やシリカ（ＳｉＯ２），カルシア（ＣａＯ），マグネシア（ＭｇＯ）等の原料粉末に適当な有機溶剤，溶媒を添加混合して泥漿状とし、これを周知のドクターブレード法やカレンダーロール法等によりシート状に成形してセラミックグリーンシート（以下、グリーンシートともいう）を得る。その後、グリーンシートを所定形状に打ち抜き加工するとともに必要に応じて複数枚積層し、これを約1600℃の温度で焼成することにより製作される。 The circuit board 5 is obtained by forming a wiring conductor on an insulating substrate made of a ceramic insulating material such as an aluminum oxide (alumina: Al 2 O 3 ) sintered body or an aluminum nitride (AlN) sintered body. If the insulating substrate is made of, for example, an aluminum oxide sintered body, first, an organic solvent suitable for a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), calcia (CaO), magnesia (MgO), etc. , A solvent is added and mixed to form a slurry, which is formed into a sheet by a known doctor blade method, calendar roll method, or the like to obtain a ceramic green sheet (hereinafter also referred to as a green sheet). Thereafter, the green sheet is punched into a predetermined shape, and a plurality of sheets are laminated as necessary, and the green sheet is fired at a temperature of about 1600 ° C.

配線導体は、例えば、図６に示す例の回路基板５ａでは、絶縁基板の上面には信号端子３・３を接続するための端子用導体と、電子部品５を搭載するとともに電子部品５の下面の接地電極を接続するための接地用導体とが形成され、下面には基体１に搭載して接続するための搭載用導体が形成され、接地用導体と搭載用導体とは、絶縁基板の側面に形成された、または絶縁基板を貫通して形成された接続導体により接続される。このような配線導体は、電子部品５によりその接続が異なるので、それに応じて形成されるものである。また、電子部品５と配線導体とは例えばボンディングワイヤにより接続されるが、このボンディングワイヤを短くすることで信号の伝送損失を少なくするために、例えば図８に示すように端子用導体を屈曲した形状として、ボンディングワイヤの接続位置が電子部品５にできるだけ近くなるようにするのが好ましい。なお、端子用導体を屈曲させる場合には、例えば図10に示すように、屈曲角度が90°より大きくなるように段階的に屈曲させたり、屈曲する角部に丸みをつけたりすると、屈曲部での反射による高周波の損失を少なくすることができるので好ましい。段階的に屈曲させる場合は、屈曲角度を120°以上とすると損失がより少なくなるのでより好ましい。また、図10に示す例では屈曲部の外側だけを段階的に屈曲させたり丸みをつけたりしているが、屈曲部の内側も同様にするのがより好ましい。   For example, in the circuit board 5 a of the example shown in FIG. 6, the wiring conductor includes a terminal conductor for connecting the signal terminals 3 and 3 on the upper surface of the insulating substrate and the lower surface of the electronic component 5. A grounding conductor for connecting the grounding electrode is formed, and a mounting conductor for mounting and connecting to the base 1 is formed on the lower surface. The grounding conductor and the mounting conductor are formed on the side surface of the insulating substrate. Or a connection conductor formed through the insulating substrate. Such a wiring conductor is formed in accordance with the connection of the electronic component 5 depending on the connection. The electronic component 5 and the wiring conductor are connected by, for example, a bonding wire. In order to reduce the signal transmission loss by shortening the bonding wire, the terminal conductor is bent, for example, as shown in FIG. As a shape, it is preferable that the connection position of the bonding wire be as close as possible to the electronic component 5. When bending the terminal conductor, for example, as shown in FIG. 10, if the bending angle is bent stepwise so that the bending angle is larger than 90 °, or if the bending corner is rounded, This is preferable because high-frequency loss due to reflection can be reduced. In the case of bending stepwise, it is more preferable to set the bending angle to 120 ° or more because the loss becomes smaller. Further, in the example shown in FIG. 10, only the outer side of the bent portion is bent stepwise or rounded, but it is more preferable that the inner side of the bent portion be the same.

配線導体の形成方法は、絶縁基板と同時焼成で、あるいは絶縁基体を作製した後に金属メタライズを形成する周知の方法や、絶縁基板を作製した後に蒸着法やフォトリソグラフィ法により形成する方法がある。電子装置が小型であり、それに搭載される回路基板５ａはさらに小さいので、配線導体は微細なものとなり、また配線導体と信号端子３・３との位置合わせ精度を高めるためには蒸着法やフォトリソグラフィ法により形成する方法が好ましい。この場合は、必要に応じて絶縁基板の主面に研磨加工を施す場合もある。   As a method for forming the wiring conductor, there are a well-known method of forming metal metallization by co-firing with an insulating substrate, or after forming an insulating base, and a method of forming the insulating substrate by vapor deposition or photolithography after forming the insulating substrate. Since the electronic device is small and the circuit board 5a mounted on the electronic device is smaller, the wiring conductor is fine, and in order to increase the alignment accuracy between the wiring conductor and the signal terminals 3 and 3, a vapor deposition method or photo A method of forming by lithography is preferred. In this case, the main surface of the insulating substrate may be polished as necessary.

以下、配線導体を蒸着法やフォトリソグラフィ法により形成する場合について詳細に説明する。配線導体は、例えば密着金属層，拡散防止層および主導体層が順次積層された３層構造の導体層から成る。   Hereinafter, the case where the wiring conductor is formed by vapor deposition or photolithography will be described in detail. The wiring conductor is composed of a conductor layer having a three-layer structure in which, for example, an adhesion metal layer, a diffusion prevention layer, and a main conductor layer are sequentially laminated.

密着金属層は、セラミックス等から成る絶縁基板との密着性を良好とするという観点からは、チタン（Ｔｉ），クロム（Ｃｒ），タンタル（Ｔａ），ニオブ（Ｎｂ），ニッケル−クロム（Ｎｉ−Ｃｒ）合金，窒化タンタル（Ｔａ２Ｎ）等の熱膨張率がセラミックスと近い金属のうちの少なくとも１種より成るのが好ましく、その厚みは0.01〜0.2μｍ程度が好ましい。密着金属層の厚みが0.01μｍ未満では、密着金属層を絶縁基板に強固に密着することが困難となる傾向がある。一方、密着金属層の厚みが0.2μｍを超えると、成膜時の内部応力によって密着金属層が絶縁基板から剥離し易くなる傾向がある。 From the viewpoint of improving the adhesion with an insulating substrate made of ceramics or the like, the adhesion metal layer is made of titanium (Ti), chromium (Cr), tantalum (Ta), niobium (Nb), nickel-chromium (Ni- It is preferable that the thermal expansion coefficient is at least one of metals close to that of ceramics, such as a Cr) alloy, tantalum nitride (Ta 2 N), and the thickness is preferably about 0.01 to 0.2 μm. When the thickness of the adhesion metal layer is less than 0.01 μm, it tends to be difficult to firmly adhere the adhesion metal layer to the insulating substrate. On the other hand, when the thickness of the adhesion metal layer exceeds 0.2 μm, the adhesion metal layer tends to be peeled off from the insulating substrate due to internal stress during film formation.

拡散防止層は、密着金属層と主導体層との相互拡散を防ぐという観点からは、白金（Ｐｔ），パラジウム（Ｐｄ），ロジウム（Ｒｈ），ニッケル（Ｎｉ），Ｎｉ−Ｃｒ合金，Ｔｉ−Ｗ合金等の熱伝導性の良好な金属のうち少なくとも１種より成ることが好ましく、その厚みは0.05〜１μｍ程度が好ましい。拡散防止層の厚みが0.05μｍ未満では、ピンホール等の欠陥が発生して拡散防止層としての機能を果たしにくくなる傾向がある。一方、拡散防止層の厚みが１μｍを超えると、成膜時の内部応力により拡散防止層が密着金属層から剥離し易く成る傾向がある。なお、拡散防止層にＮｉ−Ｃｒ合金を用いる場合は、Ｎｉ−Ｃｒ合金は絶縁基板との密着性が良好なため、密着金属層を省くことも可能である。   From the viewpoint of preventing mutual diffusion between the adhesion metal layer and the main conductor layer, the diffusion prevention layer is platinum (Pt), palladium (Pd), rhodium (Rh), nickel (Ni), Ni—Cr alloy, Ti— It is preferably made of at least one metal having good thermal conductivity such as W alloy, and the thickness is preferably about 0.05 to 1 μm. When the thickness of the diffusion preventing layer is less than 0.05 μm, defects such as pinholes are generated and the function as the diffusion preventing layer tends to be difficult. On the other hand, when the thickness of the diffusion preventing layer exceeds 1 μm, the diffusion preventing layer tends to be peeled off from the adhesion metal layer due to internal stress during film formation. When a Ni—Cr alloy is used for the diffusion preventing layer, the adhesion metal layer can be omitted because the Ni—Cr alloy has good adhesion to the insulating substrate.

主導体層は、電気抵抗の小さい金（Ａｕ），Ｃｕ，Ｎｉ，銀（Ａｇ）の少なくとも１種より成ることが好ましく、その厚みは0.1〜５μｍ程度が好ましい。主導体層の厚みが0.1μｍ未満では、電気抵抗が大きなものとなり回路基板５ａの配線導体に要求される電気抵抗を満足できなくなる傾向がある。一方、主導体層の厚みが５μｍを超えると、成膜時の内部応力により主導体層が拡散防止層から剥離し易く成る傾向がある。また、Ｃｕは酸化し易いので、その上にＮｉおよびＡｕからなる保護層を被覆してもよい。   The main conductor layer is preferably made of at least one of gold (Au), Cu, Ni, and silver (Ag) having a low electric resistance, and the thickness is preferably about 0.1 to 5 μm. If the thickness of the main conductor layer is less than 0.1 μm, the electric resistance becomes large and the electric resistance required for the wiring conductor of the circuit board 5a tends not to be satisfied. On the other hand, when the thickness of the main conductor layer exceeds 5 μm, the main conductor layer tends to be easily separated from the diffusion preventing layer due to internal stress during film formation. Further, since Cu is easily oxidized, a protective layer made of Ni and Au may be coated thereon.

電子部品５の電子部品搭載用パッケージや回路基板５ａへの搭載、あるいは回路基板５ａの電子部品搭載用パッケージへの搭載は、低融点ろう材によりそれぞれの搭載部位に固定することにより行なえばよい。例えば、回路基板５ａを基体１上に搭載した後に電子部品５を回路基板５ａ上に搭載する場合は、回路基板５ａの固定には金−錫（Ａｕ−Ｓｎ）合金や金−ゲルマニウム（Ａｕ−Ｇｅ）合金をろう材として用い、電子部品５の固定には、これらより融点の低い錫−銀（Ｓｎ−Ａｇ）合金や錫−銀−銅（Ｓｎ−Ａｇ−Ｃｕ）合金のろう材や、融点より低い温度で硬化可能な、Ａｇエポキシ等の樹脂製の接着剤を用いればよい。また、電子部品５を回路基板５ａ上に搭載した後に回路基板５ａを基体１上に搭載してもよく、その場合は上記とは逆に、回路基板５ａを基体１上に搭載する際に用いるろう材の融点の方を低くすればよい。いずれの場合であっても、回路基板５ａ上や基体１の搭載部１ａ上にろう材ペーストを周知のスクリーン印刷法を用いて印刷したり、フォトリソグラフィ法によってろう材層を形成したり、低融点ろう材のプリフォームを載置するなどすればよい。   The electronic component 5 may be mounted on the electronic component mounting package or the circuit board 5a, or the circuit board 5a may be mounted on the electronic component mounting package by being fixed to each mounting portion with a low melting point brazing material. For example, when the electronic component 5 is mounted on the circuit board 5a after the circuit board 5a is mounted on the base body 1, a gold-tin (Au—Sn) alloy or gold-germanium (Au—) is used to fix the circuit board 5a. Ge) alloy is used as a brazing material, and for fixing the electronic component 5, a brazing material of a tin-silver (Sn-Ag) alloy or a tin-silver-copper (Sn-Ag-Cu) alloy having a lower melting point than these, A resin adhesive such as Ag epoxy that can be cured at a temperature lower than the melting point may be used. In addition, after mounting the electronic component 5 on the circuit board 5a, the circuit board 5a may be mounted on the base body 1. In this case, contrary to the above, it is used when mounting the circuit board 5a on the base body 1. The melting point of the brazing material may be lowered. In any case, a brazing material paste is printed on the circuit board 5a or the mounting portion 1a of the base body 1 by using a well-known screen printing method, a brazing material layer is formed by a photolithography method, A preform of a melting point brazing material may be placed.

蓋体６は、平面視で基体１の上面の外周領域の接合部１ｂの形状に沿った外形で、基体１の上面の搭載部１ａに搭載された電子部品５を覆うような空間を有する形状のものである。この蓋体６には、電子部品５と対向する部分に光を透過させる窓を設けてもよいし、窓に換えて、または窓に加えて光ファイバおよび戻り光防止用の光アイソレータを接合したものでもよい。   The lid body 6 has an outer shape along the shape of the joint portion 1b in the outer peripheral area of the upper surface of the base body 1 in a plan view and has a shape that covers the electronic component 5 mounted on the mounting portion 1a on the upper surface of the base body 1 belongs to. The lid 6 may be provided with a window that transmits light at a portion facing the electronic component 5, or an optical fiber and an optical isolator for preventing return light are joined instead of or in addition to the window. It may be a thing.

蓋体６は、例えばＦｅ−Ｎｉ−Ｃｏ合金やＦｅ−Ｎｉ合金、Ｆｅ−Ｍｎ合金等の金属から成り、これらの板材にプレス加工や打ち抜き加工等の周知の金属加工方法を施すことによって作製される。蓋体６は、基体１の材料と同程度の熱膨張係数を有するものが好ましく、基体１の材料と同じものを用いるのがより好ましい。蓋体６が窓を有する場合は、電子部品５と対向する部分に孔を設けたものに、平板状やレンズ状のガラス製の窓部材を低融点ガラスなどにより接合して窓を構成すればよい。   The lid 6 is made of, for example, a metal such as an Fe—Ni—Co alloy, Fe—Ni alloy, or Fe—Mn alloy, and is produced by subjecting these plate materials to a known metal processing method such as press working or punching. The The lid 6 preferably has the same thermal expansion coefficient as the material of the base 1, and more preferably the same as the material of the base 1. When the lid 6 has a window, a plate is formed by bonding a flat or lens-like glass window member to a member provided with a hole in the portion facing the electronic component 5 using a low-melting glass or the like. Good.

蓋体６の基体１の接合部１ｂへの接合は、シーム溶接やＹＡＧレーザ溶接等の溶接またはＡｕ−Ｓｎろう材等のろう材によるろう付け等のろう接により行なわれる。   The lid body 6 is joined to the joint portion 1b of the base body 1 by welding such as seam welding or YAG laser welding or brazing using a brazing material such as an Au-Sn brazing material.

本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図であるIt is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す斜視図である。It is a perspective view which shows an example of embodiment of the electronic component mounting package of this invention. 本発明の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the electronic component mounting package of this invention. 従来の電子部品搭載用パッケージの実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the conventional electronic component mounting package.

符号の説明Explanation of symbols

１・・・・・基体
１ａ・・・・搭載部
１ｂ・・・・接合部
１ｃ・・・・貫通孔
１ｄ・・・・溝
２・・・・・封止材
３・・・・・信号端子
４・・・・・接地端子
５・・・・・電子部品
５ａ・・・・回路基板
６・・・・・蓋体
７・・・・・ボンディングワイヤ
８・・・・・接合材 DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Mounting part 1b ... Joining part 1c ... Through-hole 1d ... Groove 2 ... Sealing material 3 ... Signal Terminal 4 ... Grounding terminal 5 ... Electronic component 5a ... Circuit board 6 ... Lid 7 ... Bonding wire 8 ... Bonding material

Claims (4)

上面の外周領域に蓋体を溶接またはろう接により接合する接合部およびその内側に電子部品の搭載部を有するとともに上面から下面にかけて複数の貫通孔を有する基体と、前記貫通孔に充填された封止材を貫通して固定された信号端子とを具備した電子部品搭載用パッケージであって、前記基体は、前記基体の上面の前記接合部と前記貫通孔との間に溝を具備することを特徴とする電子部品搭載用パッケージ。 A base part having a joint part for joining the lid body by welding or brazing to the outer peripheral area of the upper surface and a mounting part for electronic components inside thereof and having a plurality of through holes from the upper surface to the lower surface, and a seal filled in the through holes An electronic component mounting package comprising a signal terminal fixed through a stopper, wherein the base has a groove between the joint on the upper surface of the base and the through hole. A package for mounting electronic components. 前記溝は、前記接合部の内周に沿って形成されていることを特徴とする請求項１記載の電子部品搭載用パッケージ。 The electronic component mounting package according to claim 1, wherein the groove is formed along an inner periphery of the joint portion. 前記溝は、前記複数の貫通孔をそれぞれまたはまとめて取り囲むように形成されていることを特徴とする請求項１記載の電子部品搭載用パッケージ。 2. The electronic component mounting package according to claim 1, wherein the groove is formed so as to surround each of the plurality of through holes or collectively. 請求項１乃至請求項３のいずれかに記載の電子部品搭載用パッケージの前記搭載部に電子部品を搭載するとともに、前記基体の前記接合部に蓋体を接合したことを特徴とする電子装置。 4. An electronic device comprising: an electronic component mounted on the mounting portion of the electronic component mounting package according to claim 1; and a lid member bonded to the bonding portion of the base.
JP2007219372A 2007-08-27 2007-08-27 Package for mounting electronic component, and electronic equipment using the same Pending JP2009054750A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9660176B2 (en) 2012-09-26 2017-05-23 Seiko Epson Corporation Method of manufacturing electronic device, electronic apparatus, and mobile apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9660176B2 (en) 2012-09-26 2017-05-23 Seiko Epson Corporation Method of manufacturing electronic device, electronic apparatus, and mobile apparatus

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