JP2013539229A - 波長変換型発光デバイス - Google Patents
波長変換型発光デバイス Download PDFInfo
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- JP2013539229A JP2013539229A JP2013530838A JP2013530838A JP2013539229A JP 2013539229 A JP2013539229 A JP 2013539229A JP 2013530838 A JP2013530838 A JP 2013530838A JP 2013530838 A JP2013530838 A JP 2013530838A JP 2013539229 A JP2013539229 A JP 2013539229A
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- light
- semiconductor
- wavelength conversion
- conversion element
- light emitting
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
Description
Claims (25)
- 第1のピーク波長を有する第1の光を放射することが可能な半導体発光デバイス;及び
前記第1の光を吸収して第2のピーク波長を有する第2の光を放射することが可能な半導体波長変換素子;
を有し、
前記半導体波長変換素子は、支持体に取り付けられ、且つ前記半導体発光デバイスによって放射された光の経路内に配置され;且つ
前記半導体波長変換素子は、半導体波長変換材料の少なくとも2つの第1領域と、該少なくとも2つの第1領域間に配置された、半導体波長変換材料を有しない少なくとも1つの第2領域とを含むようにパターニングされている、
構造体。 - 前記第2のピーク波長は赤色である、請求項1に記載の構造体。
- 前記半導体波長変換素子は、少なくとも1つの発光層を有し、該少なくとも1つの発光層は、III−V族半導体及びII−VI族半導体のうちの一方である、請求項1に記載の構造体。
- 前記支持体は、第3のピーク波長を有する第3の光を放射することが可能なセラミック蛍光体である、請求項1に記載の構造体。
- 前記セラミック蛍光体はテクスチャ加工されているか粗面加工されているかの一方である、請求項4に記載の構造体。
- 前記第3のピーク波長は緑色及び黄色のうちの一方である、請求項4に記載の構造体。
- 前記支持体は、透明、半透明及び散乱性のうちの1つである、請求項1に記載の構造体。
- 前記支持体はレンズである、請求項1に記載の構造体。
- 前記レンズは半球レンズ及びフレネルレンズのうちの一方である、請求項8に記載の構造体。
- 前記レンズの直径は前記半導体発光デバイスの対角線より長い、請求項8に記載の構造体。
- 当該構造体は更に光抽出素子を有し、前記半導体波長変換素子は前記半導体発光デバイスと前記光抽出素子との間に配置されている、請求項1に記載の構造体。
- 前記光抽出素子は、粗面加工あるいはパターニングされた表面を有する透明プレートを有する、請求項11に記載の構造体。
- 前記半導体波長変換素子は、第1の閉じ込め層と第2の閉じ込め層との間に配置された少なくとも1つの発光層を有する、請求項1に記載の構造体。
- 前記半導体波長変換素子は更に:
前記第1の閉じ込め層と前記第2の閉じ込め層との間に配置された更なる発光層;及び
前記少なくとも1つの発光層と前記更なる発光層との間に配置されたバリア層;
を有する、請求項13に記載の構造体。 - 当該構造体は更に、少なくとも1つの接合層を有し、該少なくとも1つの接合層は、前記半導体発光デバイスと前記半導体波長変換素子との間の境界面と、前記半導体波長変換素子と前記支持体との間の境界面とのうちの一方に配置されている、請求項1に記載の構造体。
- 前記接合層は酸化物である、請求項15に記載の構造体。
- 前記半導体波長変換素子の表面はテクスチャ加工されているか粗面加工されているかの一方である、請求項1に記載の構造体。
- 前記半導体波長変換素子の表面は不動態化されている、請求項1に記載の構造体。
- 第1のピーク波長を有する第1の光を放射することが可能な半導体発光デバイス;
前記第1の光を吸収して第2のピーク波長を有する第2の光を放射することが可能な半導体波長変換素子であり:
該半導体波長変換素子は、前記半導体発光デバイスによって放射された光の経路内に配置され;且つ
該半導体波長変換素子は、半導体波長変換材料の少なくとも2つの第1領域と、該少なくとも2つの第1領域間に配置された、半導体波長変換材料を有しない少なくとも1つの第2領域とを含むようにパターニングされている
半導体波長変換素子;及び
前記少なくとも1つの第2領域内に配置された波長変換素子であり、前記第1の光を吸収して第3のピーク波長を有する第3の光を放射することが可能な波長変換素子;
を有する構造体。 - 第1のピーク波長を有する第1の光を放射することが可能な第1の発光デバイス;並びに
第2のピーク波長を有する第2の光を放射することが可能な第2の発光デバイスであり:
第3のピーク波長を有する第3の光を放射することが可能な半導体発光デバイス;及び
前記第3の光を吸収して前記第2の光を放射することが可能な半導体波長変換素子;
を有する第2の発光デバイス;
を有する光源。 - 当該光源は更に、第4のピーク波長を有する第4の光を放射することが可能な第3の発光デバイスを有し、該第3の発光デバイスは:
第5のピーク波長を有する第5の光を放射することが可能な半導体発光デバイス;及び
前記第5の光を吸収して前記第4の光を放射することが可能な波長変換素子;
を有する、請求項20に記載の光源。 - 前記波長変換素子はセラミック蛍光体である、請求項21に記載の光源。
- 前記第1のピーク波長は青色であり、前記第2のピーク波長は赤色であり、前記第4のピーク波長は黄色及び緑色のうちの一方である、請求項21に記載の光源。
- 前記第2のピーク波長は赤色であり、前記第2の発光デバイスは、25nm以下の半値全幅を有する光スペクトルを放射する、請求項20に記載の光源。
- 前記半導体波長変換素子の表面は不動態化されている、請求項20に記載の光源。
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TW201228043A (en) | 2012-07-01 |
US20160268487A1 (en) | 2016-09-15 |
US20130187184A1 (en) | 2013-07-25 |
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WO2012042452A2 (en) | 2012-04-05 |
US9431585B2 (en) | 2016-08-30 |
KR20130138792A (ko) | 2013-12-19 |
KR20190000396A (ko) | 2019-01-02 |
US10490708B2 (en) | 2019-11-26 |
CN106935576A (zh) | 2017-07-07 |
KR20180030216A (ko) | 2018-03-21 |
JP2016219821A (ja) | 2016-12-22 |
RU2013119742A (ru) | 2014-11-10 |
US11171265B2 (en) | 2021-11-09 |
WO2012042452A3 (en) | 2012-11-08 |
RU2596179C2 (ru) | 2016-08-27 |
EP2622650B1 (en) | 2020-06-10 |
TWI529975B (zh) | 2016-04-11 |
EP2622650A2 (en) | 2013-08-07 |
CN103155186A (zh) | 2013-06-12 |
JP2018121071A (ja) | 2018-08-02 |
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