JP2013229174A - Solid-state lighting device - Google Patents

Solid-state lighting device Download PDF

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Publication number
JP2013229174A
JP2013229174A JP2012100107A JP2012100107A JP2013229174A JP 2013229174 A JP2013229174 A JP 2013229174A JP 2012100107 A JP2012100107 A JP 2012100107A JP 2012100107 A JP2012100107 A JP 2012100107A JP 2013229174 A JP2013229174 A JP 2013229174A
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light
wavelength
laser beams
wavelength conversion
lighting device
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Japanese (ja)
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Yoshihisa Ikeda
善久 池田
Junichi Kinoshita
順一 木下
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Toshiba Lighting and Technology Corp
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Toshiba Lighting and Technology Corp
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Priority to JP2012100107A priority Critical patent/JP2013229174A/en
Priority to PCT/JP2013/058174 priority patent/WO2013161462A1/en
Publication of JP2013229174A publication Critical patent/JP2013229174A/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
    • G02B6/001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type the light being emitted along at least a portion of the lateral surface of the fibre
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0003—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being doped with fluorescent agents
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/30—Semiconductor lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0005—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being of the fibre type
    • G02B6/0006—Coupling light into the fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state lighting device emitting incoherent light with enhanced safety.SOLUTION: A solid-state lighting device includes a light source part 10, a waveguide 20, a light guide, a wavelength conversion layer 32, and an outer tube part 34. The light source part 10, provided with semiconductor lasers 11 and driving circuits 12, emits a plurality of laser beams of a wavelength range of blue-violet to blue colors. The waveguide 20 guides a plurality of laser beams. The light guide includes a first face, a second face and side faces, guiding in the plurality of laser beams from the first face, guiding and scattering them toward the second face, and releasing them from the side faces. The wavelength conversion layer 32 with phosphor particles arranged in dispersion releases from an outer edge wavelength conversion light, and scattered light generated as the rest of light not absorbed by the phosphor particles out of the light released from the side faces is scattered in multiple. The outer tube part is provided to surround the outer edge of the wavelength conversion layer, and releases the scattered light and the wavelength conversion light from an outer surface as mixed light after scattering them with a roughened face.

Description

本発明の実施形態は、固体照明装置に関する。   Embodiments described herein relate generally to a solid-state lighting device.

固体発光素子を用いた白色固体照明(ＳＳＬ: Solid-State Lighting)装置は、ＬＥＤ(Light Emitting Diode)が主流である。   The LED (Light Emitting Diode) is the mainstream in white solid state lighting (SSL) devices using solid light emitting elements.

しかし、蛍光体を有する白色発光部とＬＥＤチップとは近接して設けられることが多い。このため、ＬＥＤチップの放熱と給電のための基板が必要である。   However, the white light emitting portion having a phosphor and the LED chip are often provided close to each other. For this reason, a substrate for heat dissipation and power supply of the LED chip is required.

また、高輝度ＬＥＤは、チップサイズが０．５ｍｍ×０．５ｍｍ以上であり、かつ、ランバート（Lambert）分布であり発光放射角が広い。このため、光が発散しやすく、蛍光体層を効率よく照射することが困難である。   The high-brightness LED has a chip size of 0.5 mm × 0.5 mm or more, has a Lambert distribution, and has a wide emission angle. For this reason, light tends to diverge and it is difficult to efficiently irradiate the phosphor layer.

液晶プロジェクタ、サーチライト、ヘッドライト、舞台照明、街路灯、などの照明装置には、高輝度大光量光源が必要である。しかしながら、小型、軽量、低発熱量である発光部を、ＬＥＤで構成することは困難である。   Lighting devices such as liquid crystal projectors, searchlights, headlights, stage lighting, street lights, etc. require high-intensity and high-intensity light sources. However, it is difficult to configure a light emitting unit that is small, light, and has a low calorific value with LEDs.

特開２００７−５２９５７号公報JP 2007-52957 A

社団法人 日本機械工業連合会・財団法人 光産業技術振興協会、「平成２１年度ユビキタス・レーザディスプレイの調査研究報告書」、５．３ スペックル除去、平成２２年３月Japan Machinery Federation and Optoelectronic Industry and Technology Promotion Association, “2009 Ubiquitous Laser Display Research Report”, 5.3 Speckle Removal, March 2010

インコヒーレント光が放出され、安全性が高められた固体照明装置を提供する。   Provided is a solid-state lighting device in which incoherent light is emitted and safety is improved.

実施形態にかかる固体照明装置は、光源部と、導波路と、導光体と、波長変換層と、外管部と、を有する。前記光源部は、半導体レーザーと、前記半導体レーザーを制御する駆動回路と、を有し、青紫色〜青色の波長範囲の複数のレーザー光を放出する。前記導波路は、前記複数のレーザー光をそれぞれ導光する。前記導光体は、第１の面と前記第１の面とは反対の側の第２の面と側面とを有し、前記複数のレーザー光を前記第１の面から導入し前記第２の面に向かって導光しつつ散乱し前記側面から放出する。前記波長変換層は、前記導光体の前記側面を囲む内縁と前記内縁とは反対の側の外縁とを有し、蛍光体粒子が分散して配置される。前記波長変換層は、前記側面から放出された光を吸収した前記蛍光体粒子から放出された波長変換光と、前記側面から放出された前記光のうち前記蛍光体粒子に吸収されない残余の光が多重散乱されて生じた散乱光と、を前記外縁から放出する。前記外管部は、前記波長変換層の前記外縁を囲むように設けられ、粗面が設けられた外表面を有し、前記散乱光と前記波長変換光とを、前記粗面により散乱して前記外表面から混合光として放出する。   The solid-state lighting device according to the embodiment includes a light source unit, a waveguide, a light guide, a wavelength conversion layer, and an outer tube unit. The light source unit includes a semiconductor laser and a drive circuit that controls the semiconductor laser, and emits a plurality of laser beams having a wavelength range of blue-violet to blue. The waveguide guides the plurality of laser beams. The light guide has a first surface and a second surface and a side surface opposite to the first surface, and introduces the plurality of laser beams from the first surface. The light is scattered while being guided toward the surface, and emitted from the side surface. The wavelength conversion layer has an inner edge surrounding the side surface of the light guide and an outer edge opposite to the inner edge, and the phosphor particles are arranged in a dispersed manner. The wavelength conversion layer includes wavelength-converted light emitted from the phosphor particles that have absorbed light emitted from the side surface, and residual light that is not absorbed by the phosphor particles among the light emitted from the side surface. Scattered light generated by multiple scattering is emitted from the outer edge. The outer tube portion is provided so as to surround the outer edge of the wavelength conversion layer, has an outer surface provided with a rough surface, and scatters the scattered light and the wavelength converted light by the rough surface. The mixed light is emitted from the outer surface.

インコヒーレント光が放出され、安全性が高められた固体照明装置が提供される。   An incoherent light is emitted and a solid state lighting device with improved safety is provided.

第１の実施形態にかかる固体照明装置の構成を示す模式斜視図である。It is a model perspective view which shows the structure of the solid-state lighting device concerning 1st Embodiment. 図２（ａ）は多重散乱変換部の中心軸に沿った模式断面図、図２（ｂ）はＡ−Ａ線に沿った模式断面図、図２（ｃ）は波長変換層を部分拡大した模式断面図、である。2A is a schematic cross-sectional view along the central axis of the multiple scattering converter, FIG. 2B is a schematic cross-sectional view along the line AA, and FIG. 2C is a partially enlarged wavelength conversion layer. It is a schematic cross section. 図３（ａ）はスペックルコントラストの測定系を説明する模式図、図３（ｂ）は混合光の発光スペクトル図、である。3A is a schematic diagram for explaining a speckle contrast measurement system, and FIG. 3B is an emission spectrum diagram of mixed light. 図４（ａ）はコヒーレント光により観測面に生じたスペックルノイズの写真図、図４（ｂ）はインコヒーレント光による観測面の写真図、である。FIG. 4A is a photograph of speckle noise generated on the observation surface by coherent light, and FIG. 4B is a photograph of the observation surface by incoherent light. 図５（ａ）は青色ＬＥＤのスペックルコントラスト観測面、図５（ｂ）は青色半導体レーザーのスペックルコントラスト観測面、図５（ｃ）は４つの半導体レーザーを含む照明装置のスペックルコントラスト観測面、図５（ｄ）は２０の半導体レーザーを含む照明装置のスペックルコントラスト観測面、を表すグラフ図である。5A is a speckle contrast observation surface of a blue LED, FIG. 5B is a speckle contrast observation surface of a blue semiconductor laser, and FIG. 5C is a speckle contrast observation of an illumination device including four semiconductor lasers. FIG. 5D is a graph showing a speckle contrast observation surface of an illumination device including 20 semiconductor lasers. 動作電流に対するスペックルコントラストの依存性のグラフ図である。It is a graph of the dependence of speckle contrast on operating current. 図７（ａ）は青色半導体レーザーの動作電流に対する光出力のグラフ図、図７（ｂ）は低電流領域での発光スペクトルのグラフ図、図７（ｃ）は高電流領域での発光スペクトルのグラフ図、である。FIG. 7A is a graph of the optical output with respect to the operating current of the blue semiconductor laser, FIG. 7B is a graph of the emission spectrum in the low current region, and FIG. 7C is the emission spectrum in the high current region. FIG. 第２の実施形態にかかる固体照明装置の模式断面図である。It is a schematic cross section of the solid-state lighting device concerning 2nd Embodiment.

以下、図面を参照しつつ、本発明の実施の形態について説明する。
図１は、第１の実施形態にかかる固体照明装置の構成を示す模式斜視図である。
固体照明装置は、光源部１０と、導波路２０と、導光体３９と、波長変換層３２と、外管部３４と、を有している。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic perspective view illustrating the configuration of the solid-state lighting device according to the first embodiment.
The solid state lighting device includes a light source unit 10, a waveguide 20, a light guide 39, a wavelength conversion layer 32, and an outer tube unit 34.

光源部１０は、窒化物系半導体材料からなり、青紫色〜青色の波長範囲（４０５〜４９０ｎｍ）のレーザー光を放出可能な複数の半導体レーザー１１と、複数の半導体レーザー１１のそれぞれ駆動可能な駆動回路１２（１２ａ、１２ｂ、１２ｃ、１２ｄ）と、を有する。半導体レーザー（ＬＤ：Laser Diode）１１は、導光部２０に効率良く光結合させることができる。半導体レーザー１１のチップの端面の発光点は１０μｍ以下のサイズであり、その放射角(ビーム広がり角:beam divergence)も２５度×４０度程度と狭い。   The light source unit 10 is made of a nitride-based semiconductor material, and a plurality of semiconductor lasers 11 that can emit laser light in a blue-violet to blue wavelength range (405 to 490 nm), and a drive that can drive each of the plurality of semiconductor lasers 11. Circuit 12 (12a, 12b, 12c, 12d). A semiconductor laser (LD: Laser Diode) 11 can be optically coupled to the light guide 20 efficiently. The light emitting point of the end face of the chip of the semiconductor laser 11 has a size of 10 μm or less, and its radiation angle (beam divergence) is also narrow, about 25 ° × 40 °.

駆動回路１２は、半導体レーザー１１の電圧または電流を変化することにより動作モードを制御する。また、所定の光出力となるように制御することもできる。   The drive circuit 12 controls the operation mode by changing the voltage or current of the semiconductor laser 11. It can also be controlled to achieve a predetermined light output.

導波路２０は、複数のレーザー光Ｇ１のそれぞれを、導光体３９に向けて導光する。導波路２０は、たとえば、光ファイバー２４とすることができる。光ファイバー２４は、それぞれのレーザー光毎に設けられてもよく、共通であってもよい。   The waveguide 20 guides each of the plurality of laser beams G <b> 1 toward the light guide 39. The waveguide 20 can be, for example, an optical fiber 24. The optical fiber 24 may be provided for each laser beam or may be common.

導光体３９と、波長変換層３２と、外管部３４と、は、多重散乱変換部３０を構成する。多重散乱変換部３０は、複数の半導体レーザー光Ｇ１を散乱して散乱光を生成するとともに、複数の半導体レーザー光Ｇ１を吸収した波長変換層３２により波長変換光を生成し、インコヒーレント光を照明光として放出可能である。多重散乱変換部３０は、中心軸３９ｄを有する。   The light guide 39, the wavelength conversion layer 32, and the outer tube portion 34 constitute a multiple scattering conversion unit 30. The multiple scattering conversion unit 30 scatters the plurality of semiconductor laser beams G1 to generate scattered light, and generates wavelength converted light by the wavelength conversion layer 32 that has absorbed the plurality of semiconductor laser beams G1, and illuminates incoherent light. It can be emitted as light. The multiple scattering conversion unit 30 has a central axis 39d.

図２（ａ）は多重散乱変換部の中心軸に沿った模式断面図、図２（ｂ）はＡ−Ａ線に沿った模式断面図、図２（ｃ）は波長変換層を部分拡大した模式断面図、である。
導光体３９の第１の面３９ａと、第１の面３９ａとは反対の側の第２の面３９ｂと、側面３９ｃと、を有する。４つのレーザー光ｇ１〜ｇ４は、第１の面３０ａからそれぞれ入射し、第２の面３９ｂに向かって導光されつつ、側面３９ｃから外側に向かって放出される。第１の実施形態において、半導体レーザー１１の数を４つとしたが、半導体レーザー１１の数は、これに限定されない。半導体レーザー１１の数については、後に詳細に説明する。 2A is a schematic cross-sectional view along the central axis of the multiple scattering converter, FIG. 2B is a schematic cross-sectional view along the line AA, and FIG. 2C is a partially enlarged wavelength conversion layer. It is a schematic cross section.
The light guide 39 has a first surface 39a, a second surface 39b opposite to the first surface 39a, and a side surface 39c. The four laser beams g1 to g4 are respectively incident from the first surface 30a, are guided toward the second surface 39b, and are emitted outward from the side surface 39c. In the first embodiment, the number of semiconductor lasers 11 is four, but the number of semiconductor lasers 11 is not limited to this. The number of semiconductor lasers 11 will be described in detail later.

入射したそれぞれのレーザー光ｇ１〜ｇ４は、導光体３９の第２の面３９ｂに向かって導光されつつ、導光体３９の内部における反射により散乱される。波長変換層３２は、導光体３９の側面３９ｃを囲む内縁３２ａと、内縁３２ａとは反対の側の外縁３２ｂと、を有する。また、波長変換層３２には、ＹＡＧ（Yttrium Alminum Garnet)蛍光体などからなる蛍光体粒子３２ｃが分散して配置される。   Each of the incident laser beams g <b> 1 to g <b> 4 is scattered by reflection inside the light guide 39 while being guided toward the second surface 39 b of the light guide 39. The wavelength conversion layer 32 has an inner edge 32a surrounding the side surface 39c of the light guide 39, and an outer edge 32b on the side opposite to the inner edge 32a. In the wavelength conversion layer 32, phosphor particles 32c made of YAG (Yttrium Aluminum Garnet) phosphor or the like are dispersed and arranged.

導光体３９の側面３９ｃから放出された光は、波長変換層３２を照射する。照射光を吸収した蛍光体粒子３２ｃは、波長変換光ｇｃを放出する。蛍光体粒子３２cに吸収されない残余の光は、波長変換層３２内で、蛍光体粒子３２ｃにより多重反射されたり拡散されたりしてコヒーレンスが低下した散乱光ｇｓとなる。   The light emitted from the side surface 39 c of the light guide 39 irradiates the wavelength conversion layer 32. The phosphor particles 32c that have absorbed the irradiation light emit wavelength-converted light gc. The remaining light that is not absorbed by the phosphor particles 32c becomes scattered light gs with reduced coherence by being multiple-reflected or diffused by the phosphor particles 32c in the wavelength conversion layer 32.

また、図２（ｃ）のように、拡散透過率の高い材料を含む光拡散粒子３２ｄを波長変換層３２内に分散して配置すると、散乱が増加しコヒーレンスをさらに低下することができる。光散乱粒子３２ｄは、ポリメタクリル酸メチルや炭酸カルシウムなどを含むことができる。   Further, as shown in FIG. 2C, when the light diffusion particles 32d containing a material having a high diffusion transmittance are dispersed and arranged in the wavelength conversion layer 32, the scattering increases and the coherence can be further reduced. The light scattering particles 32d can contain polymethyl methacrylate, calcium carbonate, or the like.

蛍光体粒子３２ｃや光拡散粒子３２ｄの粒径が波長以上の場合、ミー（Ｍｉｅ）散乱を主に生じる。また、粒径が波長よりも小さい場合、レイリー散乱を主に生じる。第１の実施形態では、波長変換層３２内では、主として粒子により、入射光を散乱し、コヒーレンスを低下する。   When the particle diameters of the phosphor particles 32c and the light diffusion particles 32d are equal to or greater than the wavelength, Mie scattering is mainly generated. Further, when the particle diameter is smaller than the wavelength, Rayleigh scattering is mainly generated. In the first embodiment, in the wavelength conversion layer 32, incident light is scattered mainly by particles to reduce coherence.

外管部３４は、波長変換層３２の外縁３２ｂを囲むように設けられる。外管部３４の、外表面３４ｂには、粗面が設けられる。 波長変換光ｇｃと散乱光ｇｓとは、波長変換層３２の外縁３２ｂから放出され、外管部３４へ入射する。散乱光ｇｓと、波長変換光ｇｃと、は、粗面により散乱されて外表面３４ｂから混合光ＧＴとして放出される。第１の実施形態では、光出射面となる外管部３４の外表面３４ｂを粗面化することにより、青紫色〜青色光をさらに低コヒーレントとすることができる。なお、波長変換層３２は、外管部３４の内縁３４ａに、塗布などにより設けてもよい。   The outer tube portion 34 is provided so as to surround the outer edge 32 b of the wavelength conversion layer 32. A rough surface is provided on the outer surface 34 b of the outer pipe portion 34. The wavelength converted light gc and the scattered light gs are emitted from the outer edge 32 b of the wavelength conversion layer 32 and enter the outer tube portion 34. The scattered light gs and the wavelength converted light gc are scattered by the rough surface and emitted from the outer surface 34b as the mixed light GT. In the first embodiment, by roughening the outer surface 34b of the outer tube portion 34 serving as a light emitting surface, blue-violet to blue light can be further reduced in coherency. The wavelength conversion layer 32 may be provided on the inner edge 34a of the outer tube portion 34 by coating or the like.

導光体３９と外管部３４とは、ガラス（石英を含む）やセラミックスなどを含むものとすることができる。その表面は、たとえば、フロスト処理などにより粗面化することができる。また、外管部３４をＹＡＧセラミックスからなるものとすると、紫外〜赤外領域で透明にすることができる。さらに、硬度を高め、照明装置の機械的強度を高めることができる。   The light guide 39 and the outer tube portion 34 may include glass (including quartz), ceramics, and the like. The surface can be roughened by, for example, frost treatment. Further, when the outer tube portion 34 is made of YAG ceramics, it can be made transparent in the ultraviolet to infrared region. Further, the hardness can be increased and the mechanical strength of the lighting device can be increased.

また、セラミックスが、光学異方性を有する六方晶系のＡｌ２Ｏ３などを外表面３４ｂまたは内部に含むと、散乱をさらに高めることができる。 Further, when the ceramic contains hexagonal Al 2 O 3 having optical anisotropy or the like on the outer surface 34b or inside, the scattering can be further enhanced.

第１の実施形態の固体照明装置は、１１００ルーメンを超える光束を数ｍｍ以下の直径で発光することが可能であり、大光量高輝度白色光源を実現できる。しかも、多重散乱変換層３０における発熱領域は、波長変換層３２のみであるので、小型かつ軽量とすることができる。   The solid-state lighting device of the first embodiment can emit a light beam exceeding 1100 lumens with a diameter of several millimeters or less, and can realize a high-intensity, high-intensity white light source. In addition, since the heat generation region in the multiple scattering conversion layer 30 is only the wavelength conversion layer 32, it can be made small and lightweight.

このように、半導体レーザー１１を用いた照明装置は、小型、軽量、かつ低発熱量とすることが容易である。他方、レーザー光を応用した装置に関して、国際電気標準会議（ＩＥＣ）の規定に準じた安全管理が必要である。以下に、第１の実施形態の照明光がＩＥＣ規定のどのクラスに相当するかを評価した結果を詳細に説明する。   Thus, the illumination device using the semiconductor laser 11 is easy to be small, light, and have a low calorific value. On the other hand, safety management in accordance with the provisions of the International Electrotechnical Commission (IEC) is required for devices using laser light. Hereinafter, a result of evaluating which class of the IEC standard the illumination light of the first embodiment corresponds to will be described in detail.

図３（ａ）はスペックルコントラストの測定系を説明する模式図、図３（ｂ）は混合光の発光スペクトル図、である。
図３（ａ）に表すように、外管部３４の外表面３４ｂから放出される混合光ＧＴは、スリット５２を介して、青紫色〜青色光を透過するフィルタ５４に入射する。フィルタ５４を透過した光をレンズ５６で集光し、スクリーン５８に投影する。スクリーン５８上の投影は、２ｍラジアンの立体角の光を通過させる０．８ｍｍ径のピンホールと集光レンズ６２とを介して２分の１インチＣＣＤ（Charge Coupled Device)に結像する。なお、スペックル(speckle)とは、粗物体でランダムに散乱され、各点からの散乱光が観測面（ＣＣＤ受光面）の各点で重なり合わさって生じるランダムな干渉現象を表す（［非特許文献１］）。 3A is a schematic diagram for explaining a speckle contrast measurement system, and FIG. 3B is an emission spectrum diagram of mixed light.
As shown in FIG. 3A, the mixed light GT emitted from the outer surface 34 b of the outer tube portion 34 enters the filter 54 that transmits blue-violet to blue light through the slit 52. The light transmitted through the filter 54 is collected by the lens 56 and projected onto the screen 58. The projection on the screen 58 forms an image on a 1/2 inch CCD (Charge Coupled Device) via a pin hole with a diameter of 0.8 mm that allows light with a solid angle of 2 m radians to pass through and a condenser lens 62. Note that speckle refers to a random interference phenomenon that occurs when a scattered light is randomly scattered by a rough object and scattered light from each point overlaps at each point on the observation surface (CCD light receiving surface) ([Non-patent Reference 1]).

また、図３（ｂ）に表すように、混合光ＧＴの発光スペクトルは、波長４５０ｎｍ近傍と、中心波長が５６０ｎｍであり広がったスペクトルを有する波長変換光と、を含んでいる。   Further, as shown in FIG. 3B, the emission spectrum of the mixed light GT includes a wavelength around 450 nm and wavelength converted light having a broad spectrum with a center wavelength of 560 nm.

図４（ａ）はコヒーレント光により観測面に生じたスペックルノイズの写真図、図４（ｂ）はインコヒーレント光による観測面の写真図、である。
スペックルコントラストＣｓは、平均強度Ｅ（Ｉ）と標準偏差σＩとを用いて、式（１）で表すものとする。 FIG. 4A is a photograph of speckle noise generated on the observation surface by coherent light, and FIG. 4B is a photograph of the observation surface by incoherent light.
Speckle contrast Cs, using average intensity E (I) and the standard deviation sigma I, it shall be expressed by Equation (1).


Ｃｓ＝σＩ／Ｅ（Ｉ） 式（１）
Cs = σ I / E (I) Formula (1)

観測面上において、平均強度Ｅ（Ｉ）と標準偏差σＩとを求めることにより、スペックルコントラストＣｓを、式（１）から算出する。これにより、照明光が、コヒーレント光であるレーザー光が属するクラスと、インコヒーレント光であるＬＥＤ光が属するクラスと、のいずれに近いかを評価することができる。 In the observation plane, by mean intensity E (I) and obtaining a standard deviation sigma I, the speckle contrast Cs, is calculated from equation (1). This makes it possible to evaluate whether the illumination light is closer to the class to which the laser light that is coherent light belongs or the class to which the LED light that is incoherent light belongs.

図５（ａ）は青色ＬＥＤのスペックルコントラスト観測面、図５（ｂ）は青色半導体レーザーのスペックルコントラスト観測面、図５（ｃ）は４つの半導体レーザーを含む照明装置のスペックルコントラスト観測面、図５（ｄ）は２０の半導体レーザーを含む照明装置のスペックルコントラスト観測面、を表すグラフ図である。
３次元表示の縦軸は、スペックルコントラストＣｓの相対強度である。また、２次元表示は、相対強度を平面表示したものである。 5A is a speckle contrast observation surface of a blue LED, FIG. 5B is a speckle contrast observation surface of a blue semiconductor laser, and FIG. 5C is a speckle contrast observation of an illumination device including four semiconductor lasers. FIG. 5D is a graph showing a speckle contrast observation surface of an illumination device including 20 semiconductor lasers.
The vertical axis of the three-dimensional display is the relative intensity of speckle contrast Cs. In the two-dimensional display, the relative intensity is planarly displayed.

図５（ａ）に表すように、波長４４５ｎｍの青色ＬＥＤのスペックルコントラストＣｓは、動作電流が０．１６Ａにおいて１．８％、動作電流が１Ａにおいて１．８％、であった。すなわち、スペックルコントラストＣｓは、低く、動作電流に対する変化が小さい。   As shown in FIG. 5A, the speckle contrast Cs of the blue LED having a wavelength of 445 nm was 1.8% when the operating current was 0.16A and 1.8% when the operating current was 1A. That is, the speckle contrast Cs is low and the change with respect to the operating current is small.

他方、図５（ｂ）に表すように、波長４５５ｎｍの青色半導体レーザーのスペックルコントラストＣｓは、動作電流が０．１６Ａにおいて８３．３％、動作電流が１Ａ（光出力が略１．３Ｗ）において２７％であった。すなわち、青色ＬＥＤのスペックルコントラストＣｓよりも１桁以上高かった。また、動作電流を高くすると、スペックルコントラストを低減することができた。なお、フィルタ５４の透過波長を可視光波長範囲内で変化させると、混合光のうちのそれぞれの可視光成分に対してスペックルコントラストＣｓを測定することができる。   On the other hand, as shown in FIG. 5B, the speckle contrast Cs of the blue semiconductor laser having a wavelength of 455 nm is 83.3% when the operating current is 0.16 A, and the operating current is 1 A (light output is approximately 1.3 W). 27%. That is, it was higher by one digit or more than the speckle contrast Cs of the blue LED. In addition, when the operating current was increased, the speckle contrast could be reduced. When the transmission wavelength of the filter 54 is changed within the visible light wavelength range, the speckle contrast Cs can be measured for each visible light component of the mixed light.

図５（ｃ）に表すように、４つの半導体レーザー１１を有する照明装置の場合、スペックルコントラストＣｓは、動作電流が０．１６Ａにおいて１５．８％、動作電流が１Ａにおいて３．４％であった。この場合、光束は１１００ルーメン、色温度は４０００Ｋであった。   As shown in FIG. 5C, in the case of the illumination device having the four semiconductor lasers 11, the speckle contrast Cs is 15.8% when the operating current is 0.16A and 3.4% when the operating current is 1A. there were. In this case, the luminous flux was 1100 lumens and the color temperature was 4000K.

また、図５（ｄ）に表すように、２０の半導体レーザー１１を有する照明装置の場合、スペックルコントラストＣｓは、動作電流が０．１６Ａにおいて２．４％、動作電流が１Ａにおいて１．７％であった。すなわち、動作電流が１Ａの場合、半導体レーザー１１の数を、４から２０に増加すると、スペックルコントラストＣｓは、２分の１とできた。この場合、照明装置のスペックルコントラストＣｓは、ＬＥＤと略同等であり、インコヒーレント光と言える。また、光束は５０００ルーメン、色温度は５０００Ｋであった。   Further, as shown in FIG. 5D, in the case of an illumination device having 20 semiconductor lasers 11, the speckle contrast Cs is 2.4% when the operating current is 0.16 A and 1.7 when the operating current is 1 A. %Met. That is, when the operating current is 1 A, when the number of semiconductor lasers 11 is increased from 4 to 20, the speckle contrast Cs can be halved. In this case, the speckle contrast Cs of the illumination device is substantially the same as that of the LED, and can be said to be incoherent light. The luminous flux was 5000 lumens, and the color temperature was 5000K.

複数のレーザー光の波長は、略同一であってよい。たとえば、半導体レーザー１１が、同一のウェーハに形成されている場合や発光層のＭＱＷ（Multi Quantum Well）構造が同一である場合には、発振縦モード波長の最大値と、最小値と、の差は、略１５ｎｍ以下とすることができる。このようにすると、半導体レーザー１１が略同一の特性であるので、駆動回路１２の設計が容易であり、価格も低減できる。なお、発振縦モード波長は、広がりを有する発光スペクトル内で発光スペクトル強度がピークとなる波長で表すものとする。   The wavelengths of the plurality of laser beams may be substantially the same. For example, when the semiconductor laser 11 is formed on the same wafer or when the MQW (Multi Quantum Well) structure of the light emitting layer is the same, the difference between the maximum value and the minimum value of the oscillation longitudinal mode wavelength. Can be approximately 15 nm or less. In this case, since the semiconductor laser 11 has substantially the same characteristics, the drive circuit 12 can be easily designed and the price can be reduced. Note that the oscillation longitudinal mode wavelength is represented by a wavelength at which the emission spectrum intensity peaks in a broad emission spectrum.

他方、複数の半導体レーザー１１の発振縦モード波長が、４０５〜４９０ｎｍの範囲で広く分布していてもよい。たとえば、発振縦モード波長の最大値と、最小値と、の差を、５０ｎｍ以上とすると、低コヒーレンス化がより容易となる。   On the other hand, the oscillation longitudinal mode wavelengths of the plurality of semiconductor lasers 11 may be widely distributed in the range of 405 to 490 nm. For example, if the difference between the maximum value and the minimum value of the oscillation longitudinal mode wavelength is 50 nm or more, it is easier to reduce the coherence.

図６は、動作電流に対するスペックルコントラストの依存性のグラフ図である。
縦軸はスペックルコントラストＣｓ（％）、横軸は動作電流（Ａ）、である。半導体レーザー１１の数を２０とした固体照明装置（実線）のスペックルコントラストＣｓは、１．２Ａ以下の動作電流範囲において、ＬＥＤ（破線）のスペックルコントラストＣｓと略同等である。また、半導体レーザー１１の数を４つとした固体照明装置（ドット線）のスペックルコントラストＣｓは増大し、青色半導体レーザー（鎖線）に近づく。半導体レーザー１１のスペックルコントラストＣｓ（鎖線）は、０．３Ａよりも低い動作電流において増大する。図７から、スペックルコントラストＣｓの最大値を１０％以下とすれば、低コヒーレンスとでき、人間の目に対して安全性を確保することができる。 FIG. 6 is a graph showing the dependence of speckle contrast on the operating current.
The vertical axis represents speckle contrast Cs (%), and the horizontal axis represents operating current (A). The speckle contrast Cs of the solid state lighting device (solid line) with 20 semiconductor lasers 11 is substantially equal to the speckle contrast Cs of the LED (dashed line) in the operating current range of 1.2 A or less. Further, the speckle contrast Cs of the solid state lighting device (dot line) having four semiconductor lasers 11 increases and approaches the blue semiconductor laser (chain line). The speckle contrast Cs (chain line) of the semiconductor laser 11 increases at an operating current lower than 0.3A. From FIG. 7, if the maximum value of speckle contrast Cs is 10% or less, low coherence can be achieved, and safety for human eyes can be ensured.

図７（ａ）は青色半導体レーザーの動作電流に対する光出力のグラフ図、図７（ｂ）は低電流領域での発光スペクトルのグラフ図、図７（ｃ）は高電流領域での発光スペクトルのグラフ図、である。
図７（ｂ）に表すように、動作電流が０．３Ａよりも低い領域ではシングル縦モード発振に近い縦モード配置であり、発光スペクトルは高コヒーレンスである。これに対して、図７（ｃ）に表すように、動作電流が０．３Ａ以上では、完全にマルチ縦モードであり、発光スペクトルの幅が広がり低コヒーレンスとなる。すなわち、駆動回路１２は、図７（ａ）に実線で表すように、それぞれの半導体レーザー１１を０．３Ａ以上で動作するように制御すると低コヒーレンスとすることができる。なお、輝度の制御は、駆動回路１２により０．３Ａ以上の範囲で動作電流を変化すればよい。 FIG. 7A is a graph of the optical output with respect to the operating current of the blue semiconductor laser, FIG. 7B is a graph of the emission spectrum in the low current region, and FIG. 7C is the emission spectrum in the high current region. FIG.
As shown in FIG. 7B, in the region where the operating current is lower than 0.3 A, the longitudinal mode arrangement is close to the single longitudinal mode oscillation, and the emission spectrum has high coherence. On the other hand, as shown in FIG. 7C, when the operating current is 0.3 A or more, the mode is completely the multi-longitudinal mode, the emission spectrum width is widened, and low coherence is achieved. That is, the drive circuit 12 can achieve low coherence by controlling each semiconductor laser 11 to operate at 0.3 A or more, as shown by a solid line in FIG. Note that the luminance can be controlled by changing the operating current in the range of 0.3 A or more by the drive circuit 12.

このように、多重散乱変換部３０へ入射するレーザー光を低コヒーレンスとすることにより、照明光をインコヒーレント光に変換することがさらに容易となる。   In this way, by making the laser light incident on the multiple scattering conversion unit 30 low coherence, it becomes easier to convert the illumination light into incoherent light.

なお、スペックルコントラストＣｓを用いると、導光体３９の外表面３９ｂの粗面化の効果を知ることができる。たとえば、外管部３４を石英からなるものとすると、スペックルコントラストＣｓは、１３．７％であった。他方、外管部３４をＹＡＧセラミックスからなるものとすると、スペックルコントラストＣｓは、６％と小さくできた。すなわち、ＹＡＧセラミックスは、石英よりも低コヒーレンスとすることが容易であることが判明した。   If speckle contrast Cs is used, the effect of roughening the outer surface 39b of the light guide 39 can be known. For example, when the outer tube portion 34 is made of quartz, the speckle contrast Cs is 13.7%. On the other hand, when the outer tube portion 34 is made of YAG ceramics, the speckle contrast Cs can be reduced to 6%. That is, it has been found that YAG ceramics can be easily made to have lower coherence than quartz.

図８は、第２の実施形態にかかる固体照明装置の模式断面図である。
固体照明装置は、光源部１０と、導波路２０と、導光体３９と、波長変換層３２と、反射層３８と、を有している。なお、導光体３９の断面は、矩形であるが、本発明はこれに限定されない。断面は、円、楕円、多角形などであってもよい。 FIG. 8 is a schematic cross-sectional view of a solid-state lighting device according to the second embodiment.
The solid state lighting device includes a light source unit 10, a waveguide 20, a light guide 39, a wavelength conversion layer 32, and a reflection layer 38. In addition, although the cross section of the light guide 39 is a rectangle, this invention is not limited to this. The cross section may be a circle, an ellipse, a polygon, or the like.

導光体３９は、第１の面と、第１の面とは反対の側の第２の面と、上面３９ｆと、上面３９ｆとは反対の側の下面３９ｅと、を有する。複数のレーザー光ｇ５は、導光体３９の内部を導光されつつ導光体３９の内部で反射され散乱され、上面３９ｆおよび下面３９ｅから主として放出される。   The light guide 39 has a first surface, a second surface opposite to the first surface, an upper surface 39f, and a lower surface 39e opposite to the upper surface 39f. The plurality of laser beams g5 are reflected and scattered inside the light guide 39 while being guided inside the light guide 39, and are mainly emitted from the upper surface 39f and the lower surface 39e.

また、導光体３９の下面３９ｅに接して、蛍光体粒子が分散して配置された波長変換層３２が設けられる。下面３９ｅから放出された光は波長変換層３２を照射する。照射光を吸収した蛍光体粒子３２ｃは、波長変換光ｇｃを放出する。蛍光体粒子３２cに吸収されない残余の光は、波長変換層３２内で、蛍光体粒子により反射されたり拡散され散乱光ｇｓとなる。反射層３８は、波長変換光ｇｃと散乱光ｇｓとを上方に向かって反射する。また、拡散透過率の高い材料を含む光拡散粒子を波長変換層３２内に分散して配置すると、さらにコヒーレンスを低下することができる。   In addition, a wavelength conversion layer 32 in which phosphor particles are dispersedly disposed is provided in contact with the lower surface 39e of the light guide 39. The light emitted from the lower surface 39e irradiates the wavelength conversion layer 32. The phosphor particles 32c that have absorbed the irradiation light emit wavelength-converted light gc. The remaining light that is not absorbed by the phosphor particles 32 c is reflected or diffused by the phosphor particles in the wavelength conversion layer 32 and becomes scattered light gs. The reflective layer 38 reflects the wavelength-converted light gc and the scattered light gs upward. Further, if light diffusing particles containing a material having a high diffusion transmittance are dispersed and arranged in the wavelength conversion layer 32, the coherence can be further reduced.

導光体３９の上面３９ｆに粗面を設けると、波長変換光ｇｃと散乱光ｇｓとをさらに散乱しコヒーレンスをさらに低下することができる。なお、導光体３９は、ガラス（石英を含む）およびセラミックスのいずれかを含んでもよい。   When a rough surface is provided on the upper surface 39f of the light guide 39, the wavelength-converted light gc and the scattered light gs can be further scattered to further reduce the coherence. The light guide 39 may include any of glass (including quartz) and ceramics.

もし、ＬＥＤ、ハロゲン電球、ＨＩＤ（High Intensity Discharge)などの大光量高輝度光源を用いる灯具およびプロジェクタなどの照明装置は、その光源の発熱のため、筐体のサイズが大きくなる。特に、プロジェクタは、冷却ファンなどを含み、液晶やレンズなどの光学部品、および、回路などが筐体に一体的に内蔵している。これらの高価な部品の放熱対策も必要になる。また、机の上にプロジェクタを置いた場合、冷却ファンからの排熱が不快であり、ファンの音がうるさい。これに対して、本実施形態では、放熱が容易で、小型軽量の大光量高輝度照明装置を提供することができる。   If a lighting device such as an LED, a halogen light bulb, a high intensity light source such as an HID (High Intensity Discharge), or a lighting device such as a projector, the size of the housing increases due to the heat generated by the light source. In particular, the projector includes a cooling fan and the like, and optical components such as a liquid crystal and a lens, a circuit, and the like are integrally incorporated in the housing. It is also necessary to take measures against heat dissipation from these expensive parts. In addition, when a projector is placed on a desk, the exhaust heat from the cooling fan is uncomfortable and the sound of the fan is loud. On the other hand, in the present embodiment, it is possible to provide a small and lightweight large-intensity high-intensity lighting device that is easy to dissipate heat.

また、本実施形態の固体照明装置は、１１００ルーメンを超える光束を数ｍｍ以下の直径で発光し、大光量高輝度白色光源を実現できる。多重散乱変換部３０における発熱領域は、蛍光体層３２のみであり、小型で軽量な白色発光領域を実現できる。   In addition, the solid-state lighting device of the present embodiment emits a light flux exceeding 1100 lumens with a diameter of several millimeters or less, and can realize a high-intensity, high-intensity white light source. The heat generating region in the multiple scattering conversion unit 30 is only the phosphor layer 32, and a small and lightweight white light emitting region can be realized.

本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。   Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

１１ 半導体レーザー、２０ 導波路、３０ 多重散乱変換部、３２ 波長変換層、３２ａ 内縁、３２ｂ 外縁、３２ｃ 蛍光体粒子、３２ｄ 光拡散粒子、３４ 外管部、３４ｂ 外表面、３８ 反射層、３９ 導光体、３９ａ 第１の面、３９ｂ 第２の面、３９ｅ 下面、３９ｆ 上面、Ｃｓ スペックルコントラスト、Ｇ１、ｇ１〜ｇ５ レーザー光、ＧＴ 混合光、ｇｓ 散乱光、ｇｃ 波長変換光 DESCRIPTION OF SYMBOLS 11 Semiconductor laser, 20 Waveguide, 30 Multiple scattering conversion part, 32 Wavelength conversion layer, 32a Inner edge, 32b Outer edge, 32c Phosphor particle, 32d Light diffusion particle, 34 Outer tube part, 34b Outer surface, 38 Reflective layer, 39 Conduction Light body, 39a first surface, 39b second surface, 39e lower surface, 39f upper surface, Cs speckle contrast, G1, g1 to g5 laser light, GT mixed light, gs scattered light, gc wavelength converted light

Claims (7)

半導体レーザーと前記半導体レーザーを制御する駆動回路とを有し、青紫色〜青色の波長範囲の複数のレーザー光を放出する光源部と、
前記複数のレーザー光をそれぞれ導光する導波路と、
第１の面と前記第１の面とは反対の側の第２の面と側面とを有し、前記複数のレーザー光を前記第１の面から導入し前記第２の面に向かって導光しつつ散乱し前記側面から放出する導光体と、
前記導光体の前記側面を囲む内縁と前記内縁とは反対の側の外縁とを有し、蛍光体粒子が分散して配置された波長変換層であって、前記側面から放出された光を吸収した前記蛍光体粒子から放出された波長変換光と、前記側面から放出された前記光のうち前記蛍光体粒子に吸収されない残余の光が多重散乱されて生じた散乱光と、を前記外縁から放出する波長変換層と、
前記波長変換層の前記外縁を囲むように設けられ、粗面が設けられた外表面を有し、前記散乱光と前記波長変換光とを、前記粗面により散乱して前記外表面から混合光として放出する外管部と、
を備えた固体照明装置。 A light source unit having a semiconductor laser and a driving circuit for controlling the semiconductor laser, and emitting a plurality of laser beams in a wavelength range of blue purple to blue;
A waveguide for guiding each of the plurality of laser beams;
A first surface and a second surface opposite to the first surface; and a plurality of laser beams are introduced from the first surface and guided toward the second surface. A light guide that scatters and emits light from the side surface;
A wavelength conversion layer having an inner edge surrounding the side surface of the light guide and an outer edge opposite to the inner edge, the phosphor particles being dispersed and arranged, the light emitted from the side surface The wavelength-converted light emitted from the absorbed phosphor particles and the scattered light generated by multiple scattering of the remaining light that is not absorbed by the phosphor particles out of the light emitted from the side surface, from the outer edge A wavelength converting layer to be emitted;
The outer surface of the wavelength conversion layer is provided so as to surround the outer edge, and has an outer surface provided with a rough surface. The scattered light and the wavelength converted light are scattered by the rough surface and mixed light from the outer surface. As the outer tube part discharging as
A solid state lighting device. 半導体レーザーと前記半導体レーザーを制御する駆動回路とを有し、青紫色〜青色の波長範囲の複数のレーザー光を放出する光源部と、
前記複数のレーザー光をそれぞれ導光する導波路と、
第１の面と前記第１の面とは反対の側の第２の面と上面と下面とを有し、前記複数のレーザー光を前記第１の面から導入し前記第２の面に向かって導光しつつ散乱し前記上面と前記下面から放出する導光体であって、前記上面には粗面が設けられた導光体と、
前記導光体の前記下面に設けられ蛍光体粒子が分散して配置された波長変換層であって、前記下面から放出された光を吸収した前記蛍光体粒子から放出された波長変換光と、前記下面から放出された前記光のうち前記蛍光体粒子に吸収されない残余の光が多重散乱されて生じた散乱光と、を放出する波長変換層と、
を備え、
前記散乱光と前記波長変換光とは、前記粗面により散乱されつつ混合光として放出される固体照明装置。 A light source unit having a semiconductor laser and a driving circuit for controlling the semiconductor laser, and emitting a plurality of laser beams in a wavelength range of blue purple to blue;
A waveguide for guiding each of the plurality of laser beams;
A first surface and a second surface opposite to the first surface; an upper surface and a lower surface; and introducing the plurality of laser beams from the first surface toward the second surface. A light guide that scatters and emits light from the upper surface and the lower surface, the light guide having a rough surface on the upper surface;
A wavelength conversion layer provided on the lower surface of the light guide and arranged to disperse phosphor particles, the wavelength converted light emitted from the phosphor particles absorbing the light emitted from the lower surface, and A wavelength conversion layer that emits scattered light generated by multiple scattering of the remaining light that is not absorbed by the phosphor particles among the light emitted from the lower surface;
With
The scattered light and the wavelength-converted light are solid state lighting devices that are emitted as mixed light while being scattered by the rough surface. 前記波長変換層に接するか、または前記導光体の前記上面および前記下面の少なくともいずれかに接して設けられ、前記散乱光と前記波長変換光とを反射可能な反射層をさらに備えた請求項２記載の固体照明装置。   The reflective layer provided in contact with the wavelength conversion layer or at least one of the upper surface and the lower surface of the light guide, and capable of reflecting the scattered light and the wavelength converted light. 2. The solid state lighting device according to 2. 前記複数のレーザー光の発振縦モード波長の最大値と最小値との差は、５０ｎｍ以上である請求項１〜３のいずれか１つに記載の固体照明装置。   The solid-state lighting device according to any one of claims 1 to 3, wherein a difference between a maximum value and a minimum value of oscillation longitudinal mode wavelengths of the plurality of laser beams is 50 nm or more. 前記複数のレーザー光の発振縦モード波長の最大値と最小値との差は、１５ｎｍ以下である請求項１〜３のいずれか１つに記載の固体照明装置。   The solid-state lighting device according to any one of claims 1 to 3, wherein a difference between a maximum value and a minimum value of oscillation longitudinal mode wavelengths of the plurality of laser beams is 15 nm or less. 前記駆動回路は、前記複数のレーザー光がマルチ縦モードとなるように前記半導体レーザーをそれぞれ駆動する請求項１〜５のいずれか１つに記載の固体照明装置。   The solid-state lighting device according to claim 1, wherein the driving circuit drives the semiconductor lasers so that the plurality of laser beams are in a multi-longitudinal mode. 前記混合光のうちの可視光成分のスペックルコントラストは、１０％以下である請求項１〜６のいずれか１つに記載の固体照明装置。   The solid-state lighting device according to any one of claims 1 to 6, wherein a speckle contrast of a visible light component of the mixed light is 10% or less.
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