JP2013125816A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
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- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
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- -1 polyphenylene vinylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
【解決手段】一つの実施形態によれば、半導体発光素子は、積層構造体、第1の電極、第2の電極、及び透明導電膜が直接或いは間接的に積層形成される。積層構造体は、第1導電型の第1の半導体層、発光層、及び第2導電型の第2の半導体層が直接或いは間接的に積層形成され、発光層側から第2の半導体層側方向へ光が取り出される。第1の電極は、第1の半導体層に接続される。第2の電極は、第2の半導体層の発光層側の露呈された第1主面に接続され、第1の電極と並列配置される。透明導電膜は、第2の半導体層の第1主面と相対向する第2主面を覆うように設けられる。
【選択図】 図1
Description
まず、本発明の第1の実施形態に係る半導体発光素子について、図面を参照して説明する。
Y=B/(A+B+C)・・・・・・・・・・・・・・・・・式(1)
と表わされる。発光効率としての割合Yは、キャリア濃度が増加するにつれて増加する。キャリア濃度が、例えば4E18/cm3に達すると割合Yの値は飽和し、4E18/cm3よりも増加すると割合Yは徐々に低下する。つまり、キャリア濃度が所定の値以上の領域では発光効率が低下する。
次に、本発明の第2の実施形態に係る半導体発光素子について、図面を参照して説明する。図9は半導体発光素子を示す断面図である。本実施形態では、N型クラッド層の表面を平坦化している。
次に、本発明の第3の実施形態に係る半導体発光素子について、図面を参照して説明する。図10は半導体発光素子を示す断面図である。本実施形態では、透明導電膜上に透光樹脂を設けている。
次に、本発明の第4の実施形態に係る半導体発光素子について、図面を参照して説明する。図11は半導体発光素子を示す断面図である。本実施形態では、N型クラッド層上に透光導電樹脂を設けている。
2 P型クラッド層
3 P型オーバーフロー防止層
4 MQW発光層
5 超格子層
6 N型クラッド層
7 P型電極
8 N型電極
9 透明導電膜
11 支持台
12 支持台P型電極
13 支持台N型電極
21 透光樹脂
22 透光導電樹脂
41 障壁層
42 井戸層
50 再結合発生領域
61 積層構造体
90〜93、100 半導体発光素子
e エレクトロン
h ホール
Claims (8)
- 第1導電型の第1の半導体層、発光層、及び第2導電型の第2の半導体層が直接或いは間接的に積層形成され、前記発光層側から前記第2の半導体層側方向へ光が取り出される積層構造体と、
前記第1の半導体層に接続される第1の電極と、
前記第2の半導体層の前記発光層側の露呈された第1主面に接続され、前記第1の電極と並列配置される第2の電極と、
前記第2の半導体層の第1主面と相対向する第2主面を覆うように設けられた透明導電膜と、
を具備することを特徴とする半導体発光素子。 - 前記透明導電膜の表面を覆うように設けられた透光樹脂を更に具備することを特徴とする請求項1に記載の半導体発光素子。
- 前記第2の半導体層の第2主面及び前記透明導電膜の表面の少なくとも一方に凹凸形状を設けることを特徴とする請求項1又は2に記載の半導体発光素子。
- 前記透明導電膜は、ITO膜、ZnO膜、Sn2O膜、AZO膜、或いはIZO膜であることを特徴とする請求項1乃至3のいずれか1項に記載の半導体発光素子。
- 第1導電型の第1の半導体層、発光層、及び第2導電型の第2の半導体層が直接或いは間接的に積層形成され、前記発光層側から前記第2の半導体層側方向へ光が取り出される積層構造体と、
前記第1の半導体層に接続される第1の電極と、
前記第2の半導体層の前記発光層側の露呈された第1主面に接続され、前記第1の電極と並列配置される第2の電極と、
前記第2の半導体層の第1主面と相対向する第2主面を覆うように設けられた透光導電樹脂と、
を具備することを特徴とする半導体発光素子。 - 前記第1の電極と前記第1の半導体層は略同一面積を有し、前記第1の電極はすべて前記第1の半導体層に当接されていることを特徴とする請求項1乃至5のいずれか1項に記載の半導体発光素子。
- 前記第2の半導体層の膜厚は、4μm以下に設定されることを特徴とする請求項1乃至6のいずれか1項に記載の半導体発光素子。
- 前記第1及び第2の電極は、支持台に載置されることを特徴とする請求項1乃至7のいずれか1項に記載の半導体発光素子。
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JP2011273073A JP2013125816A (ja) | 2011-12-14 | 2011-12-14 | 半導体発光素子 |
US13/598,373 US9076924B2 (en) | 2011-12-14 | 2012-08-29 | Semiconductor light emitting device |
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JP2011273073A JP2013125816A (ja) | 2011-12-14 | 2011-12-14 | 半導体発光素子 |
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JP2015050256A (ja) * | 2013-08-30 | 2015-03-16 | 株式会社東芝 | 窒化物半導体発光装置 |
JP2015056647A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 窒化物半導体発光装置 |
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