JP2013084956A - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP2013084956A JP2013084956A JP2012220040A JP2012220040A JP2013084956A JP 2013084956 A JP2013084956 A JP 2013084956A JP 2012220040 A JP2012220040 A JP 2012220040A JP 2012220040 A JP2012220040 A JP 2012220040A JP 2013084956 A JP2013084956 A JP 2013084956A
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- 239000000758 substrate Substances 0.000 claims abstract description 164
- 239000004065 semiconductor Substances 0.000 claims abstract description 154
- 239000002086 nanomaterial Substances 0.000 claims abstract description 149
- 239000010410 layer Substances 0.000 description 341
- 239000007789 gas Substances 0.000 description 53
- 238000005530 etching Methods 0.000 description 44
- 238000000034 method Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 8
- 229910005540 GaP Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- DZEYGJJYMLPRLL-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1 DZEYGJJYMLPRLL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明の発光ダイオードは、第一半導体層と、第二半導体層と、活性層と、複数の三次元ナノ構造体と、第一電極及び第二電極と、を含む。前記複数の三次元ナノ構造体は、前記基板の表面に、一次元アレイの形式によって設置され、前記三次元ナノ構造体は、第一突部と第二突部を含み、前記第一突部と前記第二突部とは互いに並列して、同じ方向で延伸し、三次元ナノ構造体の前記第一突部と前記第二突部との間には、第一溝が形成され、隣接する三次元ナノ構造体の間には、第二溝が形成され、前記第二溝の深度は前記第一溝より深い。
【選択図】図1
Description
図1を参照すると、実施例1に係る発光ダイオード10は、基板100と、第一半導体層110と、活性層120と、第二半導体層130と、第一電極112と、第二電極132及び三次元ナノ構造体アレイ140と、を含む。前記基板100は、対向する第一表面と第二表面を含む。前記第一半導体層110、前記活性層120及び前記第二半導体層130は、前記基板100の第一表面に、該第一表面から離れる方向に順に積層される。前記第一電極112は、前記第一半導体層110に電気的に接続されている。前記第二電極132は、前記第二半導体層130に電気的に接続されている。前記三次元ナノ構造体アレイ140は、前記基板100の第一表面に設置されている。
P=λ+λ0 (1)
図7を参照すると、実施例2に係る発光ダイオード20は、基板100と、第一半導体層110と、活性層120と、第二半導体層130と、第一電極112と、第二電極132及び三次元ナノ構造体アレイ140と、を含む。前記基板100は、対向する第一表面と第二表面を含む。前記第一半導体層110、活性層120及び第二半導体層130は、前記基板100の第一表面に、該第一表面から離れる方向に順に積層される。前記第一電極112は、前記第一半導体層110に電気的に接続されている。前記第二電極132は、前記第二半導体層130に電気的に接続されている。前記三次元ナノ構造体アレイ140は、前記基板100の第二表面に形成されている。
100 基板
105 基板本体
110 第一半導体層
112 第一電極
120 活性層
130 第二半導体層
1421 三次元ナノ構造体予備成形物
1426 第一溝
1428 第二溝
103 マスク層
1031 突部構造
1032 第一マスク層
1033 溝
1034 第二マスク層
132 第二電極
140a 第一三次元ナノ構造体アレイ
140 三次元ナノ構造体アレイ
140b 第二三次元ナノ構造体アレイ
142a 第一三次元ナノ構造体
142 三次元ナノ構造体
142b 第二三次元ナノ構造体
1422 第一突部
1424 第二突部
1422a、1424a 第一面
1422b、1424b 第二面
200 金型
Claims (1)
- 基板と、第一半導体層と、第二半導体層と、活性層と、複数の三次元ナノ構造体と、第一電極及び第二電極と、を含む発光ダイオードであって、
前記基板が、対向する第一表面及び第二表面を含み、
前記第一半導体層、前記活性層及び前記第二半導体層が、前記基板から離れる方向に沿って、前記基板の第一表面に順に積層され、
前記第一電極が、前記第一半導体層に電気的に接続され、
前記第二電極が、前記第二半導体層に電気的に接続され、
前記基板の第二表面が、前記発光ダイオードの光出射面であり、
前記複数の三次元ナノ構造体が、前記基板の第一表面か、前記基板の第二表面か、或いは前記基板の第一表面及び第二表面の両方に、一次元アレイの形式によって設置され、
各々の前記三次元ナノ構造体が、一つの第一突部と一つの第二突部とを含み、
前記第一突部と前記第二突部とが、互いに並列して、同じ方向に延伸し、
各々の前記三次元ナノ構造体の前記第一突部と前記第二突部との間には、一つの第一溝が形成され、
各々の前記隣接する二つの三次元ナノ構造体の間には、一つの第二溝が形成され、前記第二溝の深度が、前記第一溝より深いことを特徴とする発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110293095.7A CN103035799B (zh) | 2011-10-07 | 2011-10-07 | 发光二极管 |
CN201110293095.7 | 2011-10-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013084956A true JP2013084956A (ja) | 2013-05-09 |
JP5818766B2 JP5818766B2 (ja) | 2015-11-18 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012220040A Active JP5818766B2 (ja) | 2011-10-07 | 2012-10-02 | 発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US9041029B2 (ja) |
JP (1) | JP5818766B2 (ja) |
CN (1) | CN103035799B (ja) |
TW (1) | TWI456794B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035798B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103035799B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103035800B (zh) * | 2011-10-07 | 2016-06-08 | 清华大学 | 发光二极管 |
TW201517320A (zh) * | 2013-10-31 | 2015-05-01 | Jin-Yuan Lin | 發光結構 |
CN104218134B (zh) * | 2014-09-15 | 2017-02-15 | 映瑞光电科技(上海)有限公司 | 一种具有特殊粗化形貌的led垂直芯片结构及其制备方法 |
CN104810256A (zh) * | 2015-04-03 | 2015-07-29 | 华南师范大学 | 一种抑制InAs量子点中In偏析的生长方法 |
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JP2002368261A (ja) * | 2001-06-05 | 2002-12-20 | Sharp Corp | 窒化物系化合物半導体発光素子 |
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US20130087818A1 (en) | 2013-04-11 |
TWI456794B (zh) | 2014-10-11 |
JP5818766B2 (ja) | 2015-11-18 |
US9041029B2 (en) | 2015-05-26 |
CN103035799B (zh) | 2015-08-26 |
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