JP5794964B2 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP5794964B2 JP5794964B2 JP2012220039A JP2012220039A JP5794964B2 JP 5794964 B2 JP5794964 B2 JP 5794964B2 JP 2012220039 A JP2012220039 A JP 2012220039A JP 2012220039 A JP2012220039 A JP 2012220039A JP 5794964 B2 JP5794964 B2 JP 5794964B2
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- 239000004065 semiconductor Substances 0.000 claims description 250
- 239000002086 nanomaterial Substances 0.000 claims description 114
- 239000010410 layer Substances 0.000 description 437
- 239000007789 gas Substances 0.000 description 48
- 238000005530 etching Methods 0.000 description 45
- 239000000758 substrate Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 34
- 239000000463 material Substances 0.000 description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 229910002601 GaN Inorganic materials 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- DZEYGJJYMLPRLL-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1 DZEYGJJYMLPRLL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
図1を参照すると、実施例1に係る発光ダイオード10は、第一半導体層110と、活性層120と、第二半導体層130と、第一電極112と、第二電極132と、三次元ナノ構造体アレイ140と、を含む。前記第一半導体層110、前記活性層120及び前記第二半導体層130は、順に積層される。前記活性層120は、前記第一半導体層110及び第二半導体層130の間に設置される。前記第一電極112は、前記第一半導体層110に電気的に接続され、前記第二電極132は、前記第二半導体層130に電気的に接続されている。前記三次元ナノ構造体アレイ140は、前記第一半導体層110の、前記活性層120側と反対側の表面に設置される。
P=λ+λ0 (1)
図8を参照すると、実施例2に係る発光ダイオード20は、第一半導体層110と、活性層120と、第二半導体層130と、第一電極112と、第二電極132と、第一三次元ナノ構造体アレイ140a及び第二三次元ナノ構造体アレイ140bと、を含む。前記第一半導体層110、前記活性層120及び前記第二半導体層130は、順に積層される。前記活性層120は、前記第一半導体層110及び前記第二半導体層130の間に設置され、前記第一電極112は、前記第一半導体層110に電気的に接続され、前記第二電極132は、前記第二半導体層130に電気的に接続されている。また、前記第一三次元ナノ構造体アレイ140aは、前記第一半導体層110の、前記活性層120の反対側の表面に設置され、前記第二三次元ナノ構造体アレイ140bは、前記第二半導体層130の、前記活性層120側と反対側の表面に設置される。
12 発光ダイオードチップ予備成形物
100 基板
101 成長表面
110 第一半導体層
112 第一電極
120 活性層
130 第二半導体層
1421 三次元ナノ構造体予備成形物
1426 第一溝
1428 第二溝
103 マスク層
1031 突部構造
1032 第一マスク層
1033 溝
1034 第二マスク層
132 第二電極
140a 第一三次元ナノ構造体アレイ
140 三次元ナノ構造体アレイ
140b 第二三次元ナノ構造体アレイ
142 三次元ナノ構造体
1422 第一突部
1424 第二突部
1422a、1424a 第一面
1422b、1424b 第二面
200 金型
Claims (2)
- 第一半導体層と、第二半導体層と、活性層と、第一電極と、第二電極と、を含む発光ダイオードであって、
前記第一半導体層、前記活性層及び前記第二半導体層が、順に積層され、
前記第一電極が、前記第一半導体層の前記活性層に隣接する表面と反対側の表面の少なくとも一部に設置され、
前記第二電極が、前記第二半導体層に電気的に接続され、
前記第二半導体層の前記活性層に隣接する表面と反対側の表面が、露出され、前記発光ダイオードの光出射面であり、
前記第一半導体層が、一次元アレイの形式によって設置された複数の三次元ナノ構造体を有し、前記複数の三次元ナノ構造体が前記第一半導体層の前記活性層に隣接する表面と反対側の表面に形成されており、
前記三次元ナノ構造体は、逆W型のストリップ状の突起構造体であり、前記複数の逆W型のストリップ状の突起構造が、前記第一半導体層の前記表面に連続的にそれぞれ延在し、
各々の前記三次元ナノ構造体が、一つの第一突部と一つの第二突部とを含み、
前記第一突部と前記第二突部とが、互いに並列して、同じ方向に延伸し、
各々の前記三次元ナノ構造体の前記第一突部と前記第二突部との間には、一つの第一溝が形成され、
各々の隣接する二つの前記三次元ナノ構造体の間には、一つの第二溝が形成され、
前記第二溝の深度が、前記第一溝より深いことを特徴とする発光ダイオード。 - 更に、前記複数の三次元ナノ構造体が、前記発光ダイオードの光出射面にも、一次元アレイの形式によって設置されていることを特徴とする請求項1に記載の発光ダイオード。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110293091.9 | 2011-10-07 | ||
CN201110293091.9A CN103035798B (zh) | 2011-10-07 | 2011-10-07 | 发光二极管 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013084955A JP2013084955A (ja) | 2013-05-09 |
JP5794964B2 true JP5794964B2 (ja) | 2015-10-14 |
Family
ID=48022488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012220039A Active JP5794964B2 (ja) | 2011-10-07 | 2012-10-02 | 発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US9029889B2 (ja) |
JP (1) | JP5794964B2 (ja) |
CN (1) | CN103035798B (ja) |
TW (1) | TWI450420B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035798B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103035799B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103035800B (zh) * | 2011-10-07 | 2016-06-08 | 清华大学 | 发光二极管 |
JP5905271B2 (ja) | 2012-01-18 | 2016-04-20 | 住友化学株式会社 | 金属錯体及び該金属錯体を含む発光素子 |
BR112020002357A2 (pt) | 2017-08-04 | 2020-09-01 | Ecovap, Inc. | sistemas de painel de evaporação e métodos |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100598155B1 (ko) | 2004-03-17 | 2006-07-07 | (주)옵토웨이 | 무반사 처리된 고효율 발광 다이오드 소자 |
KR100649494B1 (ko) * | 2004-08-17 | 2006-11-24 | 삼성전기주식회사 | 레이저를 이용하여 발광 다이오드 기판을 표면 처리하는발광 다이오드 제조 방법 및 이 방법에 의해 제조된 발광다이오드 |
KR100659373B1 (ko) | 2006-02-09 | 2006-12-19 | 서울옵토디바이스주식회사 | 패터닝된 발광다이오드용 기판 및 그것을 채택하는 발광다이오드 |
KR100780233B1 (ko) | 2006-05-15 | 2007-11-27 | 삼성전기주식회사 | 다중 패턴 구조를 지닌 반도체 발광 소자 |
TWI338387B (en) | 2007-05-28 | 2011-03-01 | Delta Electronics Inc | Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method |
TWI420694B (zh) | 2008-07-29 | 2013-12-21 | Epistar Corp | 光電元件 |
KR100882240B1 (ko) | 2008-09-11 | 2009-02-25 | (주)플러스텍 | 질화물 반도체 발광소자 및 제조방법 |
JP2010087057A (ja) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | 半導体発光素子の製造方法 |
US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
WO2010131440A1 (ja) | 2009-05-12 | 2010-11-18 | パナソニック株式会社 | シート及び発光装置 |
JP5275276B2 (ja) | 2010-03-08 | 2013-08-28 | 株式会社東芝 | 半導体発光素子 |
JP2011192880A (ja) * | 2010-03-16 | 2011-09-29 | Toshiba Corp | 半導体発光素子及び液晶表示装置 |
CN101859856B (zh) * | 2010-06-04 | 2016-06-15 | 清华大学 | 发光二极管 |
JP5516191B2 (ja) | 2010-07-28 | 2014-06-11 | 日立金属株式会社 | 基板、及び発光素子 |
CN103030106B (zh) * | 2011-10-06 | 2015-04-01 | 清华大学 | 三维纳米结构阵列 |
CN103035800B (zh) * | 2011-10-07 | 2016-06-08 | 清华大学 | 发光二极管 |
CN103035799B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103035798B (zh) * | 2011-10-07 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103137811B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
CN103137812B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
CN103137816B (zh) * | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
CN103137803B (zh) * | 2011-12-03 | 2015-08-26 | 清华大学 | 发光二极管 |
CN103137817B (zh) * | 2011-12-03 | 2015-11-25 | 清华大学 | 发光二极管 |
CN103137804B (zh) * | 2011-12-03 | 2015-09-30 | 清华大学 | 发光二极管 |
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