JP2013008890A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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Abstract
【解決手段】基板は、ポリタイプ4Hの六方晶の単結晶構造を有する半導体からなる表面SRを有する。基板の表面SRは、面方位(0−33−8)を有する第1の面S1と、第1の面S1につながりかつ第1の面S1の面方位と異なる面方位を有する第2の面S2とが交互に設けられることによって構成されている。ゲート絶縁膜は基板の表面SR上に設けられている。ゲート電極はゲート絶縁膜上に設けられている。
【選択図】図3
Description
本発明の他の局面に従う半導体装置は、基板と、ゲート絶縁膜と、ゲート電極とを有する。基板は、立方晶以外の単結晶構造を有する半導体からなる表面を有する。単結晶構造は立方晶と等価な構造を周期的に含んでいる。基板の表面は、等価な構造における面方位(001)を有する第1の面と、第1の面につながりかつ第1の面の面方位と異なる面方位を有する第2の面とが交互に設けられることによって構成されている。ゲート絶縁膜は基板の表面上に設けられている。ゲート電極はゲート絶縁膜上に設けられている。
図1および図2に示すように、本実施の形態の半導体装置は炭化珪素半導体装置であり、具体的にはMOSFET100であり、より具体的には縦型DiMOSFET(Double implanted MOSFET)である。MOSFET100は、エピタキシャル基板190と、ゲート絶縁膜113と、ゲート電極117と、ソース電極116と、ドレイン電極118とを有する。
図8に示すように、炭化珪素からなり、ポリタイプ4Hの六方晶の単結晶構造を有する炭化珪素からなる単結晶基板111が準備される。単結晶基板111は表面SAを有する。表面SAの面方位は、(0−11−2)面、またはこの面からの傾きが5°以内の面が好ましい。表面SAは、機械的研磨またはスライスによって形成され得る。
本実施の形態のMOSFET100によれば、チャネルCHの表面SR(図1)が、図6および図7に示すように、面方位(0−33−8)を有する面S1と、面S1につながりかつ面S1の面方位と異なる面方位を有する面S2とが交互に設けられることによって構成されている。この構成により、チャネルCHの表面において面方位(0−33−8)の割合を高めることができる。これによりチャネル移動度を大きくすることができる。好ましくは面S2は面方位(0−11−1)を有する。これにより、チャネルCHの表面において面方位(0−33−8)の割合をより高めることができる。
図21および図22に示すように、本実施の形態の半導体装置は炭化珪素半導体装置であり、具体的にはMOSFET200であり、より具体的には縦型VMOSFET(V-groove MOSFET)である。MOSFET200は、複数のメサ構造と、これらメサ構造の間に形成された側面が傾斜した溝とを有する。溝の側壁(メサ構造の側壁)をなす表面SWは、実施の形態1で説明した表面SRとほぼ同様の構成を有する。これにより、本実施の形態においても実施の形態1と同様に、チャネルCHにおけるチャネル移動度を大きくすることができる。
図23に示すように、ポリタイプ4Hの六方晶の単結晶構造を有する炭化珪素からなる単結晶基板211が準備される。単結晶基板211の主表面SNの面方位は、(000−1)面またはこの面からの傾きが5°以内の面が好ましい。主表面SNは、機械的研磨またはスライスによって形成され得る。
Claims (11)
- ポリタイプ4Hの六方晶の単結晶構造を有する半導体からなる表面を有する基板を備え、
前記基板の前記表面は、面方位(0−33−8)を有する第1の面と、前記第1の面につながりかつ前記第1の面の前記面方位と異なる面方位を有する第2の面とが交互に設けられることによって構成されており、さらに
前記基板の前記表面上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極とを備える半導体装置。 - 前記第2の面は面方位(0−11−1)を有する、請求項1に記載の半導体装置。
- 前記半導体は炭化珪素である、請求項1または2に記載の半導体装置。
- 立方晶以外の単結晶構造を有する半導体からなる表面を有する基板を備え、
前記単結晶構造は立方晶と等価な構造を周期的に含んでおり、前記基板の前記表面は、前記等価な構造における面方位(001)を有する第1の面と、前記第1の面につながりかつ前記第1の面の前記面方位と異なる面方位を有する第2の面とが交互に設けられることによって構成されており、さらに
前記基板の前記表面上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極とを備える半導体装置。 - 前記単結晶構造は六方晶および菱面体晶のいずれかを有する、請求項4に記載の半導体装置。
- ポリタイプ4Hの六方晶の単結晶構造を有する炭化珪素からなる表面を有する基板を準備する工程と、
前記基板の前記表面を化学的に処理する工程とを備え、
前記基板の前記表面を化学的に処理する工程によって、前記基板の前記表面に、面方位(0−33−8)を有する第1の面と、前記第1の面につながりかつ前記第1の面の前記面方位と異なる面方位を有する第2の面とが交互に形成され、さらに
前記基板の前記表面上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と備える半導体装置の製造方法。 - 前記第2の面は面方位(0−11−1)を有する、請求項6に記載の半導体装置の製造方法。
- 前記表面を化学的に処理する工程は、前記表面を化学的にエッチングする工程を含む、請求項6または7に記載の半導体装置の製造方法。
- 前記表面を化学的にエッチングする工程は、前記表面を熱エッチングする工程を含む、請求項8に記載の半導体装置の製造方法。
- 前記表面を熱エッチングする工程は、少なくとも1種類以上のハロゲン原子を含む雰囲気中で前記基板を加熱する工程を含む、請求項9に記載の半導体装置の製造方法。
- 前記少なくとも1種類以上のハロゲン原子は、塩素原子およびフッ素原子の少なくともいずれかを含む、請求項10に記載の半導体装置の製造方法。
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