JP2012142275A5 - 活物質 - Google Patents

活物質 Download PDF

Info

Publication number
JP2012142275A5
JP2012142275A5 JP2011275164A JP2011275164A JP2012142275A5 JP 2012142275 A5 JP2012142275 A5 JP 2012142275A5 JP 2011275164 A JP2011275164 A JP 2011275164A JP 2011275164 A JP2011275164 A JP 2011275164A JP 2012142275 A5 JP2012142275 A5 JP 2012142275A5
Authority
JP
Japan
Prior art keywords
active material
thin film
fluorine
less
film active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011275164A
Other languages
English (en)
Other versions
JP2012142275A (ja
JP5922925B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011275164A priority Critical patent/JP5922925B2/ja
Priority claimed from JP2011275164A external-priority patent/JP5922925B2/ja
Publication of JP2012142275A publication Critical patent/JP2012142275A/ja
Publication of JP2012142275A5 publication Critical patent/JP2012142275A5/ja
Application granted granted Critical
Publication of JP5922925B2 publication Critical patent/JP5922925B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (5)

  1. 複数の突起を有する形状の、結晶性シリコンの表面に接して、厚さが０ｎｍより大きく１０ｎｍ以下の、薄膜を有し、
    前記薄膜は、フッ素を有することを特徴とする活物質。
  2. 複数の突起を有する形状の、結晶性シリコンの表面に接して、厚さが４ｎｍ以上９ｎｍ以下の、薄膜を有し、
    前記薄膜は、フッ素を有することを特徴とする活物質。
  3. 請求項１または請求項２において、
    前記薄膜は、酸化シリコン膜であることを特徴とする活物質。
  4. 請求項１乃至請求項３のいずれか一において、
    前記薄膜は、５．０×１０１９ａｔｏｍｓ・ｃｍ−３以上のフッ素を有することを特徴とする活物質。
  5. 請求項１乃至請求項４のいずれか一において、
    前記薄膜は、６．０×１０２０ａｔｏｍｓ・ｃｍ−３以下の窒素を有することを特徴とする活物質。
JP2011275164A 2010-12-16 2011-12-16 蓄電装置 Active JP5922925B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011275164A JP5922925B2 (ja) 2010-12-16 2011-12-16 蓄電装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010280754 2010-12-16
JP2010280754 2010-12-16
JP2011275164A JP5922925B2 (ja) 2010-12-16 2011-12-16 蓄電装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016081710A Division JP6247715B2 (ja) 2010-12-16 2016-04-15 蓄電装置

Publications (3)

Publication Number Publication Date
JP2012142275A JP2012142275A (ja) 2012-07-26
JP2012142275A5 true JP2012142275A5 (ja) 2014-11-06
JP5922925B2 JP5922925B2 (ja) 2016-05-24

Family

ID=46234822

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011275164A Active JP5922925B2 (ja) 2010-12-16 2011-12-16 蓄電装置
JP2016081710A Active JP6247715B2 (ja) 2010-12-16 2016-04-15 蓄電装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016081710A Active JP6247715B2 (ja) 2010-12-16 2016-04-15 蓄電装置

Country Status (3)

Country Link
US (1) US9543577B2 (ja)
JP (2) JP5922925B2 (ja)
KR (1) KR101877378B1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011156419A2 (en) * 2010-06-07 2011-12-15 The Regents Of The University Of California Lithium ion batteries based on nanoporous silicon
WO2013027561A1 (en) 2011-08-19 2013-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing graphene-coated object, negative electrode of secondary battery including graphene-coated object, and secondary battery including the negative electrode
JP6025284B2 (ja) 2011-08-19 2016-11-16 株式会社半導体エネルギー研究所 蓄電装置用の電極及び蓄電装置
WO2014171337A1 (en) 2013-04-19 2014-10-23 Semiconductor Energy Laboratory Co., Ltd. Secondary battery and a method for fabricating the same
US9935309B2 (en) * 2013-08-21 2018-04-03 Shin-Etsu Chemical Co., Ltd. Negative electrode active material, raw material for a negative electrode active material, negative electrode, lithium ion secondary battery, method for producing a negative electrode active material, and method for producing a lithium ion secondary battery
US20150132649A1 (en) 2013-11-13 2015-05-14 Semiconductor Energy Laboratory Co., Ltd. Negative electrode for power storage device, power storage device, and electrical device
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US7235330B1 (en) 1999-10-22 2007-06-26 Sanyo Electric Co., Ltd. Electrode for use in lithium battery and rechargeable lithium battery
JP2002083594A (ja) 1999-10-22 2002-03-22 Sanyo Electric Co Ltd リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池
US6887511B1 (en) 1999-10-22 2005-05-03 Sanyo Electric Co., Ltd. Method for preparing electrode material for lithium battery
JP3733071B2 (ja) 1999-10-22 2006-01-11 三洋電機株式会社 リチウム電池用電極及びリチウム二次電池
KR100766200B1 (ko) 1999-10-22 2007-10-10 산요덴키가부시키가이샤 리튬 2차전지용 전극 및 리튬 2차전지
CA2387909C (en) 1999-10-22 2012-12-18 Sanyo Electric Co., Ltd. Electrode for rechargeable lithium battery and reghargeable lithium battery
CN1189958C (zh) 1999-10-22 2005-02-16 三洋电机株式会社 可充电锂电池电极的制造方法
JP2001210315A (ja) 2000-01-25 2001-08-03 Sanyo Electric Co Ltd リチウム二次電池用電極及びこれを用いたリチウム二次電池
JP2002237294A (ja) 2001-02-08 2002-08-23 Tokuyama Corp リチウム二次電池用負極
JP2003246700A (ja) 2002-02-22 2003-09-02 Japan Science & Technology Corp シリコンナノニードルの製法
GB2395059B (en) 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
JP4193481B2 (ja) * 2002-12-10 2008-12-10 ソニー株式会社 正極活物質及びその製造方法、並びに非水電解質二次電池
JP2004281317A (ja) 2003-03-18 2004-10-07 Matsushita Electric Ind Co Ltd 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池
JP2005011696A (ja) 2003-06-19 2005-01-13 Matsushita Electric Ind Co Ltd 非水電解質二次電池用負極材料
KR100800968B1 (ko) 2004-09-11 2008-02-05 주식회사 엘지화학 리튬 이차전지용 실리콘 박막 음극의 성능 개선 방법
US9614214B2 (en) 2004-12-16 2017-04-04 Lg Chem, Ltd. Method for improvement of performance of si thin film anode for lithium rechargeable battery
JP2008103148A (ja) 2006-10-18 2008-05-01 Sony Corp 負極および電池
JP4525742B2 (ja) 2007-01-30 2010-08-18 ソニー株式会社 リチウムイオン二次電池用負極およびリチウムイオン二次電池
US8951672B2 (en) 2007-01-30 2015-02-10 Sony Corporation Anode, method of manufacturing it, battery, and method of manufacturing it
KR20080076813A (ko) 2007-02-16 2008-08-20 소니 가부시끼가이샤 부극 및 그 제조 방법과 전지
US20090148778A1 (en) 2007-02-16 2009-06-11 Sony Corporation Anode, method of manufacturing it, and battery
JP2009164104A (ja) * 2007-09-06 2009-07-23 Canon Inc 負極用電極材料、その製造方法ならびに該材料を用いた電極構造体及び蓄電デバイス
JP4518125B2 (ja) * 2007-09-27 2010-08-04 トヨタ自動車株式会社 正極活物質およびリチウム二次電池
JP2009087891A (ja) 2007-10-03 2009-04-23 Toyota Motor Corp 正極活物質の製造方法およびリチウム二次電池の製造方法
JP5196149B2 (ja) * 2008-02-07 2013-05-15 信越化学工業株式会社 非水電解質二次電池用負極材及びその製造方法並びにリチウムイオン二次電池及び電気化学キャパシタ
US8481214B2 (en) 2008-02-25 2013-07-09 Catalyst Power Technologies Electrodes including support filament with collar stop
KR101307623B1 (ko) 2008-02-25 2013-09-12 로날드 앤쏘니 로제스키 고용량 전극
JP5278657B2 (ja) * 2008-03-10 2013-09-04 ソニー株式会社 二次電池および電子機器
JP5422923B2 (ja) 2008-05-29 2014-02-19 ソニー株式会社 負極および二次電池、ならびに負極および二次電池の製造方法
JP2010003148A (ja) * 2008-06-20 2010-01-07 Casio Comput Co Ltd 通信端末装置、及びプログラム
JP4952746B2 (ja) * 2008-11-14 2012-06-13 ソニー株式会社 リチウムイオン二次電池およびリチウムイオン二次電池用負極
US20100319188A1 (en) 2009-06-19 2010-12-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of power storage device
WO2011001620A1 (ja) 2009-06-29 2011-01-06 パナソニック株式会社 リチウムイオン電池用負極、その製造方法、およびリチウムイオン電池
US9061902B2 (en) 2009-12-18 2015-06-23 The Board Of Trustees Of The Leland Stanford Junior University Crystalline-amorphous nanowires for battery electrodes
JP5711565B2 (ja) 2010-02-26 2015-05-07 株式会社半導体エネルギー研究所 蓄電装置
KR20130040187A (ko) 2010-03-26 2013-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지와 이차 전지 전극의 제조 방법
WO2011118328A1 (en) 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
WO2011136028A1 (en) 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
US20110294005A1 (en) 2010-05-28 2011-12-01 Semiconductor Energy Laboratory Co., Ltd. Power storage device, electrode, and electric device
US8852294B2 (en) 2010-05-28 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
KR101838627B1 (ko) 2010-05-28 2018-03-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치 및 그 제작 방법
WO2011152189A1 (en) 2010-06-01 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Energy storage device and manufacturing method thereof
WO2011152190A1 (en) 2010-06-02 2011-12-08 Semiconductor Energy Laboratory Co., Ltd. Power storage device and method for manufacturing the same
WO2011155397A1 (en) 2010-06-11 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Power storage device
US8846530B2 (en) 2010-06-30 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor region and method for manufacturing power storage device
US20120003383A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of energy storage device
WO2012002136A1 (en) 2010-06-30 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of power storage device
US20120015247A1 (en) 2010-07-14 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Silicon crystal body and power storage device using the silicon crystal body
US9012080B2 (en) 2010-09-21 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Needle-like microstructure and device having needle-like microstructure
KR101899374B1 (ko) 2010-11-26 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막, 반도체막의 형성 방법 및 축전 장치

Similar Documents

Publication Publication Date Title
JP2012216797A5 (ja) 半導体装置
JP2012142275A5 (ja) 活物質
USD667382S1 (en) Wireless remote
JP2012235107A5 (ja) 半導体装置
JP2012235106A5 (ja)
JP2013077513A5 (ja)
JP2014096359A5 (ja) 電極材料
JP2013077562A5 (ja)
JP2012015100A5 (ja) 蓄電装置
JP2012235098A5 (ja) 半導体装置
JP2013229093A5 (ja)
JP2010258434A5 (ja) 半導体装置
JP2012015101A5 (ja) 蓄電装置
JP2011129898A5 (ja) 半導体装置
JP2015015457A5 (ja)
JP2015000297A5 (ja)
JP2013508788A5 (ja)
JP2012098628A5 (ja)
JP2011100997A5 (ja) 半導体装置
JP2011100877A5 (ja)
JP2010123925A5 (ja) 表示装置
JP2012018919A5 (ja)
JP2015109432A5 (ja)
JP2010239120A5 (ja) 半導体装置
JP2015514231A5 (ja)