JP2012084846A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000007772 electrode material Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 108091006146 Channels Proteins 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】半導体基板の表面にトレンチ7を形成するためのシリコン窒化膜13を残したまま、トレンチ7内をゲート電極材料9で埋設し、シリコン窒化膜13上にあるゲート電極材料9を除去することで、トレンチ7内にゲート電極9を形成する。
【選択図】図1
Description
2 N+型埋め込み層
3 P型シリコン層
4 N−型ドレイン層
5 P型ウェル層(P型チャネル層)
6 フィールド絶縁膜
7 トレンチ
8 ゲート絶縁膜
9 ゲート電極
10 N型ソース領域
11 N++型ソース領域
12 N++型ドレイン領域
13 シリコン窒化膜
14 シリコン酸化膜
15 リンガラス層
16 金属電極
Claims (3)
- 半導体基板の表面にチャネル層を形成する工程と、
前記半導体基板の表面にシリコン窒化膜および第一のシリコン酸化膜を順に形成し、前記チャネル層を覆う前記シリコン窒化膜および前記第一のシリコン酸化膜に、トレンチを形成するための開口を設ける工程と、
前記シリコン窒化膜および前記第一のシリコン酸化膜をマスクとして、前記開口の位置に前記半導体基板の表面から前記チャネル層よりも深いトレンチを形成する工程と、
前記シリコン窒化膜を残して前記第一のシリコン酸化膜を除去する工程と、
前記シリコン窒化膜をマスクとして、前記トレンチの側面にゲート酸化膜となる第二のシリコン酸化膜を形成する工程と、
前記トレンチを埋め込むように前記シリコン窒化膜表面にゲート電極材料を堆積した後、前記シリコン窒化膜をマスクとして前記シリコン窒化膜上にある前記ゲート電極材料を除去し、上端面が後にソース領域となる前記チャネル層の表面よりも上となるように前記トレンチ内にゲート電極を形成する工程と、
前記シリコン窒化膜を除去した後、前記トレンチの周囲に前記チャネル層と逆導電型のソース領域を形成する工程と、
を有する半導体装置の製造方法。 - 半導体基板の表面にチャネル層を形成する工程と、
前記半導体基板の表面にシリコン窒化膜および第一のシリコン酸化膜を順に形成し、前記チャネル層を覆う前記シリコン窒化膜および前記第一のシリコン酸化膜に、トレンチを形成するための開口を設ける工程と、
前記シリコン窒化膜および前記第一のシリコン酸化膜をマスクとして、前記開口の位置に前記半導体基板の表面から前記チャネル層よりも深いトレンチを形成する工程と、
前記シリコン窒化膜を残して前記第一のシリコン酸化膜を除去する工程と、
前記シリコン窒化膜をマスクとして、前記トレンチの側面にゲート酸化膜となる第二のシリコン酸化膜を形成する工程と、
前記トレンチを埋め込むように前記シリコン窒化膜表面にゲート電極材料を堆積した後、前記シリコン窒化膜をマスクとして前記シリコン窒化膜上にある前記ゲート電極材料を除去し、上端面が後にソース領域となる前記チャネル領域の表面よりも上となるように前記トレンチ内にゲート電極を形成する工程と、
前記トレンチの周囲に前記チャネル層と逆導電型のソース領域を形成した後、前記ゲート電極の上端面が前記チャネル層の表面よりも上となっている状態を保ったまま前記シリコン窒化膜を除去する工程と、
を有することを特徴とする半導体装置の製造方法。 - 第1導電型の半導体基板上に設けられた第2導電型のチャネル層と、
前記チャネル層の表面から前記チャネル層を貫通して設けられたトレンチと、
前記トレンチ内壁面に設けられたゲート絶縁膜と、
前記ゲート絶縁膜を介して前記トレンチ内に充填されたゲート電極と、
前記トレンチの周囲に配置されたソース領域と、
から成り、
前記ゲート電極の上端面が後にソース領域となる前記チャネル層の表面よりも上にあるとともに、前記ゲート電極の上端部の側面が、前記トレンチ内の前記ゲート電極の側面と同一形状を有している半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011145895A JP5738094B2 (ja) | 2010-09-14 | 2011-06-30 | 半導体装置の製造方法 |
TW100129747A TWI539497B (zh) | 2010-09-14 | 2011-08-19 | Manufacturing method of semiconductor device |
CN201110268106.6A CN102403340B (zh) | 2010-09-14 | 2011-09-09 | 半导体器件及其制造方法 |
US13/199,951 US8513077B2 (en) | 2010-09-14 | 2011-09-13 | Semiconductor device and method of manufacturing the same |
KR1020110092556A KR101803978B1 (ko) | 2010-09-14 | 2011-09-14 | 반도체 장치 및 그 제조 방법 |
Applications Claiming Priority (3)
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JP2010205698 | 2010-09-14 | ||
JP2010205698 | 2010-09-14 | ||
JP2011145895A JP5738094B2 (ja) | 2010-09-14 | 2011-06-30 | 半導体装置の製造方法 |
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JP2012084846A true JP2012084846A (ja) | 2012-04-26 |
JP5738094B2 JP5738094B2 (ja) | 2015-06-17 |
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JP2011145895A Expired - Fee Related JP5738094B2 (ja) | 2010-09-14 | 2011-06-30 | 半導体装置の製造方法 |
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Country | Link |
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US (1) | US8513077B2 (ja) |
JP (1) | JP5738094B2 (ja) |
KR (1) | KR101803978B1 (ja) |
CN (1) | CN102403340B (ja) |
TW (1) | TWI539497B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103748685B (zh) * | 2011-07-14 | 2016-08-17 | Abb技术有限公司 | 绝缘栅双极晶体管 |
US20140110777A1 (en) * | 2012-10-18 | 2014-04-24 | United Microelectronics Corp. | Trench gate metal oxide semiconductor field effect transistor and fabricating method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0417371A (ja) * | 1990-05-10 | 1992-01-22 | Matsushita Electron Corp | Mos電界効果トランジスタの製造方法 |
JPH09321303A (ja) * | 1996-05-22 | 1997-12-12 | Samsung Electron Co Ltd | トレンチ拡散mosトランジスタ及びその製造方法 |
JP2001077362A (ja) * | 1999-09-08 | 2001-03-23 | Nec Corp | 半導体装置およびその製造方法 |
JP2004103764A (ja) * | 2002-09-09 | 2004-04-02 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2010034285A (ja) * | 2008-07-29 | 2010-02-12 | Rohm Co Ltd | トレンチ型半導体素子及びトレンチ型半導体素子の製造方法 |
Family Cites Families (10)
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KR940002400B1 (ko) * | 1991-05-15 | 1994-03-24 | 금성일렉트론 주식회사 | 리세스 게이트를 갖는 반도체장치의 제조방법 |
US5300447A (en) * | 1992-09-29 | 1994-04-05 | Texas Instruments Incorporated | Method of manufacturing a minimum scaled transistor |
JP3281847B2 (ja) | 1997-09-26 | 2002-05-13 | 三洋電機株式会社 | 半導体装置の製造方法 |
GB9815021D0 (en) * | 1998-07-11 | 1998-09-09 | Koninkl Philips Electronics Nv | Semiconductor power device manufacture |
JP4236848B2 (ja) | 2001-03-28 | 2009-03-11 | セイコーインスツル株式会社 | 半導体集積回路装置の製造方法 |
US6753570B1 (en) * | 2002-08-20 | 2004-06-22 | Advanced Micro Devices, Inc. | Memory device and method of making |
JP2006114834A (ja) * | 2004-10-18 | 2006-04-27 | Toshiba Corp | 半導体装置 |
JP2006339476A (ja) * | 2005-06-03 | 2006-12-14 | Elpida Memory Inc | 半導体装置及びその製造方法 |
KR100796502B1 (ko) * | 2006-12-29 | 2008-01-21 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
JP5165954B2 (ja) * | 2007-07-27 | 2013-03-21 | セイコーインスツル株式会社 | 半導体装置 |
-
2011
- 2011-06-30 JP JP2011145895A patent/JP5738094B2/ja not_active Expired - Fee Related
- 2011-08-19 TW TW100129747A patent/TWI539497B/zh not_active IP Right Cessation
- 2011-09-09 CN CN201110268106.6A patent/CN102403340B/zh not_active Expired - Fee Related
- 2011-09-13 US US13/199,951 patent/US8513077B2/en not_active Expired - Fee Related
- 2011-09-14 KR KR1020110092556A patent/KR101803978B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0417371A (ja) * | 1990-05-10 | 1992-01-22 | Matsushita Electron Corp | Mos電界効果トランジスタの製造方法 |
JPH09321303A (ja) * | 1996-05-22 | 1997-12-12 | Samsung Electron Co Ltd | トレンチ拡散mosトランジスタ及びその製造方法 |
JP2001077362A (ja) * | 1999-09-08 | 2001-03-23 | Nec Corp | 半導体装置およびその製造方法 |
JP2004103764A (ja) * | 2002-09-09 | 2004-04-02 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
JP2010034285A (ja) * | 2008-07-29 | 2010-02-12 | Rohm Co Ltd | トレンチ型半導体素子及びトレンチ型半導体素子の製造方法 |
Also Published As
Publication number | Publication date |
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TW201214533A (en) | 2012-04-01 |
KR20120028283A (ko) | 2012-03-22 |
KR101803978B1 (ko) | 2017-12-01 |
CN102403340A (zh) | 2012-04-04 |
US8513077B2 (en) | 2013-08-20 |
TWI539497B (zh) | 2016-06-21 |
JP5738094B2 (ja) | 2015-06-17 |
US20120061748A1 (en) | 2012-03-15 |
CN102403340B (zh) | 2016-06-22 |
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