JP2012003256A - 液晶表示装置および液晶表示装置の作製方法 - Google Patents
液晶表示装置および液晶表示装置の作製方法 Download PDFInfo
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- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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- 229910052708 sodium Inorganic materials 0.000 description 1
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- 239000007858 starting material Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
【解決手段】画素電極層(第1の電極層ともいう)である反射膜が設けられた第1の基板と、共通電極層(第2の電極層ともいう)が設けられた第2の基板とでゲストホスト液晶層を挟持する液晶表示装置において、画素電極層である反射膜が液晶層に突出し、ミクロンサイズの第1の凹凸、及び第1の凹凸上にナノサイズの第2の凹凸を形成して配置される。
【選択図】図1
Description
本明細書で開示する発明の構成の一形態である液晶表示装置を、図1を用いて説明する。図1は液晶表示装置の断面図である。
本明細書に開示する発明を適用したアクティブマトリクス型の液晶表示装置の例を、図4を用いて説明する。
本実施の形態では、本明細書に開示する液晶表示装置に適用できるトランジスタの例を示す。本明細書に開示する液晶表示装置に適用できるトランジスタの構造は特に限定されず、例えばトップゲート構造、又はボトムゲート構造のスタガ型及びプレーナ型などを用いることができる。また、トランジスタはチャネル形成領域が一つ形成されるシングルゲート構造でも、2つ形成されるダブルゲート構造もしくは3つ形成されるトリプルゲート構造であっても良い。また、チャネル領域の上下にゲート絶縁層を介して配置された2つのゲート電極層を有する、デュアルゲート型でもよい。なお、図6(A)乃至(D)にトランジスタの断面構造の一例を以下に示す。
上記実施の形態2または3において、トランジスタの半導体層に用いることのできる例として酸化物半導体について説明する。
本実施の形態は、酸化物半導体層を含むトランジスタ、及び作製方法の他の一例を図7を用いて詳細に説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
上記実施の形態2乃至5において、トランジスタの半導体層に用いることのできる他の材料の例を説明する。
本実施の形態においては、液晶表示装置の一形態に相当する液晶表示装置の外観及び断面について、図5(A)、及び図5(B)を用いて説明する。図5(A)、及び図5(B)は、第1の基板4001上に形成されたトランジスタ4010、トランジスタ4011、及び液晶層4008を含む液晶素子4013を、第2の基板4006との間にシール材4005によって封止した、液晶表示装置の上面図及び断面図に相当する。
本明細書に開示する液晶表示装置は、さまざまな電子機器に適用することができる。特に本明細書に開示する液晶表示装置は、液晶層にゲストホスト液晶を使用し、ゲスト分子である二色性色素により光を吸収し黒表示を行い、反射性の画素電極層による光散乱によって、白表示を行うために、紙面のような良質な画質を有するので、使用者の目に優しく、電子ペーパーとして好適に適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告における表示等に適用することができる。
11 基板供給室
12 ロードロック室
13 搬送室
14 カセットポート
15 真空チャンバー
16 ICPコイル
17 ガス流路
18 高周波電源
19 基板ステージ
20 被処理基板
21 高周波電源
22 圧力制御弁
23 ドライポンプ
24 排気口
30 絶縁層
31 凹凸
32 凹凸
200 基板
201 基板
202 絶縁層
203 画素電極層
204 共通電極層
205 液晶層
206 ネマティック液晶分子
207 二色性色素
208 配向膜
209 配向膜
210 凹凸
211 凹凸
401 ゲート電極層
402 ゲート絶縁層
403 半導体層
405a ソース電極層
405b ドレイン電極層
407 絶縁層
408 容量配線層
409 絶縁層
410 トランジスタ
414 画素電極層
417 絶縁層
420 トランジスタ
427 絶縁層
430 トランジスタ
436a 配線層
436b 配線層
437 絶縁層
440 トランジスタ
441 基板
442 基板
444 液晶層
448 共通電極層
449 コンタクトホール
450 配向膜
451 配向膜
460 トランジスタ
470 凹凸
480 凹凸
505 基板
506 保護絶縁層
507 ゲート絶縁層
510 トランジスタ
511 ゲート電極層
515a ソース電極層
515b ドレイン電極層
516 絶縁層
530 酸化物半導体層
531 酸化物半導体層
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4007 コンタクトホール
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 共通電極層
4032 配向膜
4033 配向膜
4301 表示部
4302 表示部
4304 操作部
4305 筐体
4306 筐体
4307 表示部
4308 綴じ部
4310 表示部
4311 表示パネル
4312 表示パネル
4313 表示パネル
9630 筐体
9631 表示部
9632 操作キー
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 コンバータ
9637 コンバータ
Claims (17)
- ゲストホスト液晶を挟持する一対の基板と、
前記一対の基板の一方に設けられた透光性の電極と、
前記一対の基板の他方に設けられた、第1の凹凸を有し該第1の凹凸の表面に第2の凹凸が設けられた絶縁層と、
前記絶縁層の第1の凹凸の表面に沿って形成され且つ該第2の凹凸によって表面が粗面化された画素電極層と、を有し、
前記画素電極層は、反射性を有することを特徴とする液晶表示装置。 - 請求項1において、
前記絶縁層は、感光性有機樹脂であることを特徴とする液晶表示装置。 - 請求項1において、
前記絶縁層に設けられた第1の凹凸は平面方向に1.5μm以上20μm以下の大きさであることを特徴とする液晶表示装置。 - 請求項1乃至3のいずれか一項において、
前記絶縁層に設けられた第1の凹凸は0.1μm以上20μm以下の高さであることを特徴とする液晶表示装置。 - 請求項1乃至4のいずれか一項において、
前記絶縁層に設けられた第2の凹凸は平面方向に0.1μm以上1μm以下の大きさであることを特徴とする液晶表示装置。 - 請求項1乃至5のいずれか一項において、
前記絶縁層に設けられた第2の凹凸は0.1μm以上1μm以下の高さであることを特徴とする液晶表示装置。 - 請求項1乃至6のいずれか一項において、前記絶縁層に形成される凹凸は、
第1の凹凸よりも第2の凹凸の方が小さく形成されることを特徴とする液晶表示装置。 - 請求項1乃至7のいずれか一項において、前記絶縁層にそって形成される画素電極層は、5nm以上500nm以下の厚さで反射性を有することを特徴とする液晶表示装置。
- 請求項1乃至8のいずれか一項において、前記ゲストホスト液晶は、二色性色素をゲスト分子として含むネマティック液晶であることを特徴とする液晶表示装置。
- 請求項1乃至9のいずれか一項において、前記第1の基板と、前記画素電極層との間にトランジスタが設けられ、
前記画素電極層は前記トランジスタと電気的に接続されていることを特徴とする液晶表示装置。 - 請求項10において、前記トランジスタは酸化物半導体層を含むことを特徴とする液晶表示装置。
- 感光性の有機樹脂を用いて、第1の凹凸を形成し、
前記第1の凹凸上にプラズマ処理にて第2の凹凸を形成し、
前記第1の凹凸、及び前記第2の凹凸上にそって反射性のある画素電極層を形成することを特徴とする液晶表示装置の作製方法。 - 請求項12において、
前記第2の凹凸を形成するプラズマ処理は、前記第1の凹凸を有する有機樹脂に酸素ガス雰囲気下にて形成することを特徴とする液晶表示装置の作製方法。 - 請求項12において、
前記第1の凹凸は、平面方向に1.5μm以上20μm以下の大きさで形成することを特徴とする液晶表示装置の作製方法。 - 請求項12または請求項14において、
前記第1の凹凸は、0.1μm以上20μm以下の高さで形成することを特徴とする液晶表示装置の作製方法。 - 請求項12において、
前記第2の凹凸は、平面方向に0.1μm以上1μm以下の大きさで形成することを特徴とする液晶表示装置の作製方法。 - 請求項12または請求項16において、
前記第2の凹凸は、0.1μm以上1μm以下の高さで形成することを特徴とする液晶表示装置の作製方法。
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JP2015216216A Withdrawn JP2016014908A (ja) | 2010-05-20 | 2015-11-03 | 液晶表示装置の作製方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013242403A (ja) * | 2012-05-18 | 2013-12-05 | Sharp Corp | 液晶表示装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011145537A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US9445494B2 (en) * | 2011-05-23 | 2016-09-13 | Sharp Kabushiki Kaisha | Wiring substrate and display panel comprising same |
JP6351947B2 (ja) * | 2012-10-12 | 2018-07-04 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
TWI612689B (zh) * | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
CN105259706B (zh) * | 2015-11-26 | 2018-07-17 | 武汉华星光电技术有限公司 | 反射式液晶显示面板和显示装置 |
US10289381B2 (en) * | 2015-12-07 | 2019-05-14 | Motorola Mobility Llc | Methods and systems for controlling an electronic device in response to detected social cues |
JP2018013765A (ja) * | 2016-04-28 | 2018-01-25 | 株式会社半導体エネルギー研究所 | 電子デバイス |
CN109922919A (zh) * | 2016-11-03 | 2019-06-21 | 株式会社半导体能源研究所 | 激光加工装置、叠层体加工装置及激光加工方法 |
CN109427819B (zh) * | 2017-08-31 | 2021-05-04 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN110993622A (zh) * | 2019-12-13 | 2020-04-10 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
CN114063339B (zh) * | 2021-11-18 | 2023-12-26 | 武汉华星光电技术有限公司 | 显示面板和移动终端 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0675237A (ja) * | 1992-08-28 | 1994-03-18 | Sharp Corp | 反射型液晶表示装置 |
US20020001047A1 (en) * | 2000-02-18 | 2002-01-03 | Park Sung-Il | LCD device having a reflective electrode and a fabricating method thereof |
JP2006221055A (ja) * | 2005-02-14 | 2006-08-24 | Nec Lcd Technologies Ltd | 反射板、その製造方法及び液晶表示装置 |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56119586A (en) | 1980-02-25 | 1981-09-19 | Suzuyo Tanigaki | Picture display and image pickup device |
US4431272A (en) * | 1980-05-08 | 1984-02-14 | Kabushiki Kaisha Suwa Seikosha | Liquid crystal display device |
US4928301A (en) | 1988-12-30 | 1990-05-22 | Bell Communications Research, Inc. | Teleconferencing terminal with camera behind display screen |
JPH0411484A (ja) | 1990-04-27 | 1992-01-16 | Nippon Philips Kk | 画像表示/撮像装置 |
US5159445A (en) | 1990-12-31 | 1992-10-27 | At&T Bell Laboratories | Teleconferencing video display system for improving eye contact |
JP3027065B2 (ja) | 1992-07-31 | 2000-03-27 | 日本電信電話株式会社 | 表示・撮像装置 |
US6067082A (en) | 1992-11-09 | 2000-05-23 | Enmei; Toshiharu | Portable communicator |
US5815197A (en) | 1995-02-16 | 1998-09-29 | Sumitomo Electric Industries, Ltd. | Two-way interactive system, terminal equipment and image pickup apparatus having mechanism for matching lines of sight between interlocutors through transmission means |
JPH08340520A (ja) | 1995-06-14 | 1996-12-24 | Sharp Corp | 映像装置 |
US6055028A (en) | 1996-02-14 | 2000-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal electro-optical device |
US6697129B1 (en) | 1996-02-14 | 2004-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Guest-host mode liquid crystal display device of lateral electric field driving type |
KR200172315Y1 (ko) | 1997-03-26 | 2000-04-01 | 김기일 | 비상 경보 및 음성과 영상 획득 기능을 가진 휴대폰 |
US6163055A (en) | 1997-03-24 | 2000-12-19 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
US6879354B1 (en) | 1997-03-28 | 2005-04-12 | Sharp Kabushiki Kaisha | Front-illuminating device and a reflection-type liquid crystal display using such a device |
JP4601731B2 (ja) | 1997-08-26 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法 |
JPH11287989A (ja) * | 1998-04-03 | 1999-10-19 | Toshiba Corp | 反射型液晶表示装置及びその製造方法 |
JP2000241831A (ja) * | 1999-02-18 | 2000-09-08 | Advanced Display Inc | 反射型液晶表示装置およびその製造方法 |
JP2001141915A (ja) * | 1999-07-19 | 2001-05-25 | Matsushita Electric Ind Co Ltd | 反射板及びその製造方法、並びに反射板を備えた反射型表示素子及びその製造方法 |
US6473631B1 (en) | 1999-12-20 | 2002-10-29 | Motorola, Inc. | Video swivel phone |
JP2002027306A (ja) | 2000-07-12 | 2002-01-25 | Minolta Co Ltd | 画像送信機能付き通信装置 |
DE20021842U1 (de) | 2000-12-21 | 2001-06-21 | Wolfgang Feierbach | Transportabler Kommunikationsrechner |
JP2002304136A (ja) | 2001-01-17 | 2002-10-18 | Seiko Epson Corp | 有機エレクトロルミネッセンス表示装置を備えた電子機器 |
US7480019B2 (en) * | 2001-01-25 | 2009-01-20 | Sharp Kabushiki Kaisha | Method of manufacturing a substrate for an lcd device |
JP4425490B2 (ja) | 2001-03-30 | 2010-03-03 | シャープ株式会社 | 反射型液晶表示装置の製造方法 |
TW548689B (en) | 2001-01-25 | 2003-08-21 | Fujitsu Display Tech | Reflection type liquid crystal display device and manufacturing method thereof |
JP3750587B2 (ja) | 2001-11-05 | 2006-03-01 | 日本電気株式会社 | 折り畳み式携帯電話機 |
US6777869B2 (en) | 2002-04-10 | 2004-08-17 | Si Diamond Technology, Inc. | Transparent emissive display |
KR100737895B1 (ko) * | 2002-09-18 | 2007-07-10 | 삼성전자주식회사 | 반사형 및 반사-투과형 액정표시장치 및 이의 제조방법 |
US6888562B2 (en) | 2003-03-26 | 2005-05-03 | Broadcom Corporation | Integral eye-path alignment on telephony and computer video devices using a pinhole image sensing device |
TWI381702B (zh) | 2003-06-17 | 2013-01-01 | Semiconductor Energy Lab | 具有攝像功能之顯示裝置及雙向通訊系統 |
JP4845336B2 (ja) | 2003-07-16 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 撮像機能付き表示装置、及び双方向コミュニケーションシステム |
SG114747A1 (en) * | 2004-02-25 | 2005-09-28 | Mitsubishi Gas Chemical Co | Etching composition for laminated film including reflective electrode and method for forming laminated wiring structure |
KR101202983B1 (ko) * | 2005-09-13 | 2012-11-20 | 엘지디스플레이 주식회사 | 반사투과형 액정표시장치용 어레이 기판 및 그 제조방법 |
US7821613B2 (en) | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP2008009082A (ja) * | 2006-06-28 | 2008-01-17 | Nec Corp | 半導体装置及びその製造方法 |
JP5467567B2 (ja) * | 2008-03-27 | 2014-04-09 | 株式会社ジャパンディスプレイ | 液晶装置 |
-
2011
- 2011-05-09 US US13/103,147 patent/US8605240B2/en active Active
- 2011-05-10 TW TW100116349A patent/TWI489170B/zh not_active IP Right Cessation
- 2011-05-18 JP JP2011111014A patent/JP2012003256A/ja not_active Withdrawn
- 2011-05-18 KR KR1020110046629A patent/KR20110128142A/ko not_active Application Discontinuation
-
2013
- 2013-09-27 US US14/038,899 patent/US9337218B2/en not_active Expired - Fee Related
-
2015
- 2015-11-03 JP JP2015216216A patent/JP2016014908A/ja not_active Withdrawn
-
2017
- 2017-06-02 JP JP2017110143A patent/JP2017146630A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0675237A (ja) * | 1992-08-28 | 1994-03-18 | Sharp Corp | 反射型液晶表示装置 |
US20020001047A1 (en) * | 2000-02-18 | 2002-01-03 | Park Sung-Il | LCD device having a reflective electrode and a fabricating method thereof |
JP2006221055A (ja) * | 2005-02-14 | 2006-08-24 | Nec Lcd Technologies Ltd | 反射板、その製造方法及び液晶表示装置 |
JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013242403A (ja) * | 2012-05-18 | 2013-12-05 | Sharp Corp | 液晶表示装置 |
Also Published As
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JP2017146630A (ja) | 2017-08-24 |
TW201211627A (en) | 2012-03-16 |
US20140024154A1 (en) | 2014-01-23 |
TWI489170B (zh) | 2015-06-21 |
US9337218B2 (en) | 2016-05-10 |
JP2016014908A (ja) | 2016-01-28 |
KR20110128142A (ko) | 2011-11-28 |
US20110285945A1 (en) | 2011-11-24 |
US8605240B2 (en) | 2013-12-10 |
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