JP2011521448A - Ledアレイ - Google Patents
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- JP2011521448A JP2011521448A JP2011508880A JP2011508880A JP2011521448A JP 2011521448 A JP2011521448 A JP 2011521448A JP 2011508880 A JP2011508880 A JP 2011508880A JP 2011508880 A JP2011508880 A JP 2011508880A JP 2011521448 A JP2011521448 A JP 2011521448A
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- 239000002184 metal Substances 0.000 claims abstract description 73
- 230000017525 heat dissipation Effects 0.000 claims abstract description 4
- 238000004904 shortening Methods 0.000 claims abstract 2
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 6
- 238000003491 array Methods 0.000 claims description 3
- 239000012811 non-conductive material Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S8/00—Lighting devices intended for fixed installation
- F21S8/04—Lighting devices intended for fixed installation intended only for mounting on a ceiling or the like overhead structures
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2107/00—Light sources with three-dimensionally disposed light-generating elements
- F21Y2107/50—Light sources with three-dimensionally disposed light-generating elements on planar substrates or supports, but arranged in different planes or with differing orientation, e.g. on plate-shaped supports with steps on which light-generating elements are mounted
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 平面的広がりを有する光源を形成するために隣接配置されてほぼ等しい方向に向けられている多数のLED1チップからなり、LEDチップ1が多層金属膜支持体の上に装着され、多層金属膜支持体がサンドイッチ状に金属膜同士の間を絶縁する絶縁層3を有しかつ階段状に形成された複数の段を備えた構造を有するLEDアレイにおいて、各段がその上にある金属膜の相応の短縮または切欠きによって形成されていて、各LEDチップ1が1つの段の金属膜の上に配置され、電気的に接続されていて、各LEDチップ1がそれに隣接した上段の金属膜と接続ワイヤ5を介して電気的に接触されている。
【選択図】図1
Description
2 櫛形金属膜
3 絶縁層
4、6 電気接続部
5 接続ワイヤ
7 照明レンズ
8 冷却系
9 ボンディングパッド
Claims (14)
- 平面的広がりを有する光源を形成するために隣接配置されて同一方向に向けられている複数のLEDチップを有しており、当該LEDチップが多層金属膜支持体の上に装着されており、当該多層金属膜支持体がその金属膜同士の間を絶縁する絶縁層を当該金属膜同士の間にサンドイッチ状に有しており、かつ複数の段を有する階段状に形成された構造を備えたLEDアレイであって、
前記複数の段は、その段の直上の段にある金属膜における、当該段に対する相対的な短縮または切欠きによって、形成されており、
前記LEDチップは、それぞれ1段の金属膜上に1つずつ配置されると共に電気的に接続されており、
かつ前記LEDチップは、それぞれその隣接する上段の金属膜に対して電気的に接続されているLEDアレイ。 - 請求項1記載のLEDアレイにおいて、
前記複数のLEDチップが、少なくとも1つのグループごとに直列に接続されているLEDアレイ。 - 請求項1または2記載のLEDアレイにおいて、
前記複数のLEDチップの電気的な接続が、少なくとも部分的に直列に、および/または少なくとも部分的に並列に、配線されているLEDアレイ。 - 請求項1ないし3のうちいずれか1つに記載のLEDアレイにおいて、
前記LEDチップ(1)が、接続ワイヤ(5)を介して、電気的接続パッド(9)からその隣の逆極性に接続された金属膜に結合されているLEDアレイ。 - 請求項1ないし4のうちいずれか1つに記載のLEDアレイにおいて、
前記金属膜が、前記LEDチップの側とは反対側の領域において、電気接続部(4)によって、さらなる電気的接続が成されているLEDアレイ。 - 請求項1ないし5のうちいずれか1つに記載のLEDアレイにおいて、
前記複数のLEDチップが、放熱のために、前記金属膜に結合されているLEDアレイ。 - 請求項6記載のLEDアレイにおいて、
前記金属膜が、前記LEDチップの側とは反対側の領域において、ヒートシンクに接合されているLEDアレイ。 - 請求項1ないし7のうちいずれか1つに記載のLEDアレイにおいて、
前記LEDチップの発光側に、当該LEDアレイを少なくとも部分的に覆う、非導電性材料からなる照明レンズを備えたLEDアレイ。 - 請求項1ないし8のうちいずれか1つに記載のLEDアレイにおいて、
前記金属膜同士の間にそれぞれ絶縁層を設けてなる多層金属膜が、前記LEDチップを配置されていない領域内にてほぼ90°曲げられているLEDアレイ。 - 請求項1ないし9のうちいずれか1つに記載のLEDアレイにおいて、
外部へと向かう複数の電気接続部(4)が、上側の金属膜および下側の金属膜のうちの1つずつにそれぞれ設けられているLEDアレイ。 - 請求項1ないし10のうちいずれか1つに記載のLEDアレイにおいて、
前記複数のLEDチップが、複数の指状部分を有する櫛形に形成された金属膜構造の上に装着されているLEDアレイ。 - 請求項11記載のLEDアレイにおいて、
前記複数の櫛形構造が、一つの多層サンドイッチ金属膜構造として具現されているLEDアレイ。 - 請求項1ないし12のうちいずれか1つに記載のLEDアレイにおいて、
前記複数のLEDアレイのうちの少なくとも1つが、発光側にレンズを備え、背後側に冷却系を備えたLEDアレイ。 - 請求項1ないし13のうちいずれか1つに記載のLEDアレイにおいて、
前記複数のLEDアレイが、機械的および/または電気的に、互いに結合されているLEDアレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008023369 | 2008-05-13 | ||
DE102008023369.2 | 2008-05-13 | ||
PCT/EP2009/055650 WO2009138374A1 (de) | 2008-05-13 | 2009-05-11 | Led-anordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011521448A true JP2011521448A (ja) | 2011-07-21 |
JP5236070B2 JP5236070B2 (ja) | 2013-07-17 |
Family
ID=41050855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011508880A Active JP5236070B2 (ja) | 2008-05-13 | 2009-05-11 | Ledアレイ |
Country Status (6)
Country | Link |
---|---|
US (1) | US8183581B2 (ja) |
EP (1) | EP2277198B1 (ja) |
JP (1) | JP5236070B2 (ja) |
KR (1) | KR101554055B1 (ja) |
CN (1) | CN102027596B (ja) |
WO (1) | WO2009138374A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013162123A (ja) * | 2012-02-07 | 2013-08-19 | Lextar Electronics (Suzhou) Corp | 固体発光素子 |
KR20140116654A (ko) * | 2013-03-25 | 2014-10-06 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2017103381A (ja) * | 2015-12-03 | 2017-06-08 | シチズン電子株式会社 | 発光装置 |
Families Citing this family (14)
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CN102027596B (zh) | 2008-05-13 | 2012-12-05 | 西门子公司 | 发光二极管装置 |
EP2283275B1 (de) * | 2008-06-03 | 2019-01-09 | Siemens Aktiengesellschaft | Beleuchtungsanordnung mit led-array |
US8809820B2 (en) * | 2010-01-27 | 2014-08-19 | Heraeus Noblelight Fusion Uv Inc. | Micro-channel-cooled high heat load light emitting device |
DE102010026344A1 (de) | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
CN102130107B (zh) * | 2010-12-13 | 2013-01-09 | 吉林大学 | 阶梯阵列式高压发光管及其制备方法 |
DE102013201327A1 (de) * | 2013-01-28 | 2014-07-31 | Osram Gmbh | Leiterplatte, optoelektronisches Bauteil und Anordnung optoelektronischer Bauteile |
CN107978546B (zh) * | 2014-12-22 | 2020-08-07 | 苏州固锝电子股份有限公司 | 便于上料的二极管器件周转装置 |
DE102016104202A1 (de) * | 2016-03-08 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US10069051B2 (en) | 2016-04-08 | 2018-09-04 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
TWI581417B (zh) * | 2016-04-11 | 2017-05-01 | 友達光電股份有限公司 | 發光裝置及其製造方法 |
KR102035132B1 (ko) * | 2018-01-05 | 2019-10-22 | 엘지전자 주식회사 | 차량용 램프 및 차량 |
JP7053329B2 (ja) | 2018-03-22 | 2022-04-12 | スタンレー電気株式会社 | 車両用灯具 |
CN109461380B (zh) * | 2018-06-26 | 2021-11-05 | 矽照光电(厦门)有限公司 | 一种柔性有源彩色显示模块 |
CN111081730B (zh) * | 2019-12-13 | 2022-12-27 | 深圳第三代半导体研究院 | Micro-LED芯片及其制造方法 |
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2009
- 2009-05-11 CN CN2009801175104A patent/CN102027596B/zh not_active Expired - Fee Related
- 2009-05-11 EP EP09745706.3A patent/EP2277198B1/de not_active Not-in-force
- 2009-05-11 WO PCT/EP2009/055650 patent/WO2009138374A1/de active Application Filing
- 2009-05-11 KR KR1020107025376A patent/KR101554055B1/ko active IP Right Grant
- 2009-05-11 JP JP2011508880A patent/JP5236070B2/ja active Active
- 2009-05-11 US US12/736,835 patent/US8183581B2/en not_active Expired - Fee Related
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JPH0758411A (ja) * | 1993-07-23 | 1995-03-03 | Xerox Corp | レーザアレイ |
JP2007538404A (ja) * | 2004-05-17 | 2007-12-27 | テクストロン・システムズ・コーポレイション | スタガー配置アレイ型結合器 |
JP2006351351A (ja) * | 2005-06-16 | 2006-12-28 | Nichicon Corp | 光源装置 |
JP2007003914A (ja) * | 2005-06-24 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 発光モジュールとこれを用いた投映型表示装置用光源ユニット |
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JP2013162123A (ja) * | 2012-02-07 | 2013-08-19 | Lextar Electronics (Suzhou) Corp | 固体発光素子 |
KR20140116654A (ko) * | 2013-03-25 | 2014-10-06 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2016516305A (ja) * | 2013-03-25 | 2016-06-02 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ |
US10177286B2 (en) | 2013-03-25 | 2019-01-08 | Lg Innotek Co., Ltd. | Light emitting element package having three regions |
KR101998765B1 (ko) | 2013-03-25 | 2019-07-10 | 엘지이노텍 주식회사 | 발광소자 패키지 |
JP2017103381A (ja) * | 2015-12-03 | 2017-06-08 | シチズン電子株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
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KR101554055B1 (ko) | 2015-09-17 |
EP2277198B1 (de) | 2018-07-11 |
CN102027596A (zh) | 2011-04-20 |
WO2009138374A1 (de) | 2009-11-19 |
US20110062464A1 (en) | 2011-03-17 |
CN102027596B (zh) | 2012-12-05 |
EP2277198A1 (de) | 2011-01-26 |
US8183581B2 (en) | 2012-05-22 |
KR20110011619A (ko) | 2011-02-08 |
JP5236070B2 (ja) | 2013-07-17 |
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