JP2011520296A - ｐ側上方ＧａＮ系発光ダイオードの光電気化学粗面化 - Google Patents

ｐ側上方ＧａＮ系発光ダイオードの光電気化学粗面化 Download PDF

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JP2011520296A
JP2011520296A JP2011509616A JP2011509616A JP2011520296A JP 2011520296 A JP2011520296 A JP 2011520296A JP 2011509616 A JP2011509616 A JP 2011509616A JP 2011509616 A JP2011509616 A JP 2011509616A JP 2011520296 A JP2011520296 A JP 2011520296A
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led
light
type
layer
roughened
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JP2011520296A5 (zh
Inventor
アデル タンボリ，
エブリン エル． ヒュー，
スティーブン ピー． デンバーズ，
シュウジ ナカムラ，
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University of California
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University of California
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
JP2011509616A 2008-05-12 2009-05-12 ｐ側上方ＧａＮ系発光ダイオードの光電気化学粗面化 Pending JP2011520296A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5241708P 2008-05-12 2008-05-12
US61/052,417 2008-05-12
PCT/US2009/043641 WO2009140285A1 (en) 2008-05-12 2009-05-12 Photoelectrochemical roughening of p-side-up gan-based light emitting diodes

Publications (2)

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JP2011520296A true JP2011520296A (ja) 2011-07-14
JP2011520296A5 JP2011520296A5 (zh) 2012-07-05

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JP2011509616A Pending JP2011520296A (ja) 2008-05-12 2009-05-12 ｐ側上方ＧａＮ系発光ダイオードの光電気化学粗面化

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US (1) US20090315055A1 (zh)
EP (1) EP2286148A1 (zh)
JP (1) JP2011520296A (zh)
KR (1) KR20110005734A (zh)
CN (1) CN102089582A (zh)
WO (1) WO2009140285A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020013837A (ja) * 2018-07-13 2020-01-23 株式会社サイオクス 構造体および中間構造体
WO2020080456A1 (ja) * 2018-10-18 2020-04-23 株式会社サイオクス 構造体の製造方法および構造体の製造装置
WO2020217768A1 (ja) * 2019-04-26 2020-10-29 株式会社サイオクス 構造体の製造方法および中間構造体
JP2020184605A (ja) * 2019-04-26 2020-11-12 株式会社サイオクス 構造体の製造方法および中間構造体

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
WO2009015386A1 (en) 2007-07-26 2009-01-29 The Regents Of The University Of California Light emitting diodes with a p-type surface
US7858995B2 (en) * 2007-08-03 2010-12-28 Rohm Co., Ltd. Semiconductor light emitting device
US8053264B2 (en) * 2008-05-12 2011-11-08 The Regents Of The University Of California Photoelectrochemical etching of P-type semiconductor heterostructures
WO2010042871A1 (en) * 2008-10-09 2010-04-15 The Regents Of The University Of California Photoelectrochemical etching for chip shaping of light emitting diodes
CN102280536B (zh) * 2011-08-02 2013-03-06 山东大学 一种光辅助红光led的磷化镓窗口层湿法粗化的方法
US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9741899B2 (en) 2011-06-15 2017-08-22 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US9142741B2 (en) * 2011-06-15 2015-09-22 Sensor Electronic Technology, Inc. Emitting device with improved extraction
US10319881B2 (en) 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
US9337387B2 (en) 2011-06-15 2016-05-10 Sensor Electronic Technology, Inc. Emitting device with improved extraction
KR101983773B1 (ko) * 2011-06-17 2019-05-29 엘지이노텍 주식회사 발광소자 및 이를 포함하는 발광소자 패키지
US8976366B2 (en) 2011-06-27 2015-03-10 Zeta Instruments, Inc. System and method for monitoring LED chip surface roughening process
KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
US20140167059A1 (en) * 2012-08-30 2014-06-19 The Regents Of The University Of California Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications
CN105283946A (zh) * 2013-03-14 2016-01-27 阿卜杜拉国王科技大学 无缺陷单晶薄层
WO2014203123A1 (en) 2013-06-19 2014-12-24 Koninklijke Philips N.V. Led with patterned surface features based on emission field patterns
US10461221B2 (en) 2016-01-18 2019-10-29 Sensor Electronic Technology, Inc. Semiconductor device with improved light propagation
CN111162155B (zh) * 2020-01-03 2021-07-06 深圳市奥伦德元器件有限公司 镓铝砷材质的红外led芯片的功率提升方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040206969A1 (en) * 2003-04-15 2004-10-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2007165612A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
JP2007258446A (ja) * 2006-03-23 2007-10-04 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
JP2008109098A (ja) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd 発光ダイオード装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739217A (en) * 1969-06-23 1973-06-12 Bell Telephone Labor Inc Surface roughening of electroluminescent diodes
US4369099A (en) * 1981-01-08 1983-01-18 Bell Telephone Laboratories, Incorporated Photoelectrochemical etching of semiconductors
US4404072A (en) * 1981-06-22 1983-09-13 Bell Telephone Laboratories, Incorporated Photoelectrochemical processing of III-V semiconductors
US5773369A (en) * 1996-04-30 1998-06-30 The Regents Of The University Of California Photoelectrochemical wet etching of group III nitrides
US5824206A (en) * 1996-06-28 1998-10-20 The United States Of America As Represented By The Secretary Of The Air Force Photoelectrochemical etching of p-InP
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US6630692B2 (en) * 2001-05-29 2003-10-07 Lumileds Lighting U.S., Llc III-Nitride light emitting devices with low driving voltage
KR100568298B1 (ko) * 2004-03-30 2006-04-05 삼성전기주식회사 외부양자효율이 개선된 질화물 반도체 및 그 제조방법
US7550395B2 (en) * 2004-11-02 2009-06-23 The Regents Of The University Of California Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte
US7125734B2 (en) * 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
JP4670489B2 (ja) * 2005-06-06 2011-04-13 日立電線株式会社 発光ダイオード及びその製造方法
US20070018182A1 (en) * 2005-07-20 2007-01-25 Goldeneye, Inc. Light emitting diodes with improved light extraction and reflectivity
US7674639B2 (en) * 2006-08-14 2010-03-09 Bridgelux, Inc GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same
WO2008060530A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Ion beam treatment for the structural integrity of air-gap iii-nitride devices produced by photoelectrochemical (pec) etching
US7700962B2 (en) * 2006-11-28 2010-04-20 Luxtaltek Corporation Inverted-pyramidal photonic crystal light emitting device
JP2008270416A (ja) * 2007-04-18 2008-11-06 Sanken Electric Co Ltd 物体に粗面を形成する方法
CN100583475C (zh) * 2007-07-19 2010-01-20 富士迈半导体精密工业（上海）有限公司 氮化物半导体发光元件及其制作方法
US20090166654A1 (en) * 2007-12-31 2009-07-02 Zhiyin Gan Light-emitting diode with increased light efficiency
US8592800B2 (en) * 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
US8053264B2 (en) * 2008-05-12 2011-11-08 The Regents Of The University Of California Photoelectrochemical etching of P-type semiconductor heterostructures
US20100072518A1 (en) * 2008-09-12 2010-03-25 Georgia Tech Research Corporation Semiconductor devices and methods of fabricating same
WO2010042871A1 (en) * 2008-10-09 2010-04-15 The Regents Of The University Of California Photoelectrochemical etching for chip shaping of light emitting diodes
JP2012517104A (ja) * 2009-01-30 2012-07-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア レーザファセットのための光電気化学エッチング

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040206969A1 (en) * 2003-04-15 2004-10-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2007521641A (ja) * 2003-12-09 2007-08-02 ザ・レジェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア 表面粗化による高効率の（Ｂ，Ａｌ，Ｇａ，Ｉｎ）Ｎベースの発光ダイオード
JP2007165612A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007258446A (ja) * 2006-03-23 2007-10-04 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法、窒化ガリウム系化合物半導体発光素子及びそれを用いたランプ
JP2008109098A (ja) * 2006-09-29 2008-05-08 Sanyo Electric Co Ltd 発光ダイオード装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7261546B2 (ja) 2018-07-13 2023-04-20 住友化学株式会社 構造体
JP2020013837A (ja) * 2018-07-13 2020-01-23 株式会社サイオクス 構造体および中間構造体
WO2020080456A1 (ja) * 2018-10-18 2020-04-23 株式会社サイオクス 構造体の製造方法および構造体の製造装置
JP2020068385A (ja) * 2018-10-18 2020-04-30 株式会社サイオクス 構造体の製造方法および構造体の製造装置
JP2020068371A (ja) * 2018-10-18 2020-04-30 株式会社サイオクス 構造体の製造方法および構造体の製造装置
US11791151B2 (en) 2018-10-18 2023-10-17 Sumitomo Chemical Company, Limited Structure production wet etch method and structure production apparatus
JP7295836B2 (ja) 2018-10-18 2023-06-21 住友化学株式会社 構造体の製造方法および構造体の製造装置
JP2021057614A (ja) * 2018-10-18 2021-04-08 株式会社サイオクス 構造体の製造方法および構造体の製造装置
US11289322B2 (en) 2018-10-18 2022-03-29 Sciocs Company Limited Structure manufacturing method including surface photoelectrochemical etching and structure manufacturing device
JP2020184601A (ja) * 2019-04-26 2020-11-12 株式会社サイオクス 構造体の製造方法および中間構造体
JP7254639B2 (ja) 2019-04-26 2023-04-10 住友化学株式会社 素子の製造方法
US11393693B2 (en) 2019-04-26 2022-07-19 Sciocs Company Limited Structure manufacturing method and intermediate structure
JP2020184605A (ja) * 2019-04-26 2020-11-12 株式会社サイオクス 構造体の製造方法および中間構造体
WO2020217768A1 (ja) * 2019-04-26 2020-10-29 株式会社サイオクス 構造体の製造方法および中間構造体

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KR20110005734A (ko) 2011-01-18
CN102089582A (zh) 2011-06-08
EP2286148A1 (en) 2011-02-23
US20090315055A1 (en) 2009-12-24
WO2009140285A1 (en) 2009-11-19

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