JP2011519484A - 発光素子及びその製造方法 - Google Patents
発光素子及びその製造方法 Download PDFInfo
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- JP2011519484A JP2011519484A JP2011507353A JP2011507353A JP2011519484A JP 2011519484 A JP2011519484 A JP 2011519484A JP 2011507353 A JP2011507353 A JP 2011507353A JP 2011507353 A JP2011507353 A JP 2011507353A JP 2011519484 A JP2011519484 A JP 2011519484A
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- 238000004519 manufacturing process Methods 0.000 title description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 230000000903 blocking effect Effects 0.000 claims abstract description 56
- 150000004767 nitrides Chemical class 0.000 claims description 54
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- -1 Ta 2 O 3 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 292
- 238000000034 method Methods 0.000 description 19
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (15)
- 第2電極層と、
前記第2電極層上の第2導電型半導体層と、
前記第2導電型半導体層の酸化物を含む電流遮断層と、
前記第2導電型半導体層上の活性層と、
前記活性層上の第1導電型半導体層と、
前記第1導電型半導体層上の第1電極層と、を含む発光素子。 - 前記第1電極層、第2電極層、及び電流遮断層は少なくとも一部分が垂直方向にオーバーラップする請求項1に記載の発光素子。
- 前記電流遮断層は上面及び側面が前記第2導電型半導体層と接し、下面が前記第2電極層に対向する請求項1に記載の発光素子。
- 前記電流遮断層は複数個に離隔されて形成される請求項1に記載の発光素子。
- 前記第2電極層と前記電流遮断層間にオーミック接触層を含む請求項1に記載の発光素子。
- 前記電流遮断層は複数個形成され、少なくとも二つの電流遮断層は互いに異なる大きさを有する請求項1に記載の発光素子。
- 前記第1導電型半導体層は第1窒化物層と第2窒化物層を含み、前記第1窒化物層は前記第2窒化物層より屈折率が小さい請求項1に記載の発光素子。
- 前記第1窒化物層はAlGaN層またはAlN層から形成され、前記第2窒化物層はGaN層から形成される請求項7に記載の発光素子。
- 前記電流遮断層はGaxOyから形成される請求項1に記載の発光素子。
- 第2電極層と、
前記第2電極層上の第2導電型半導体層と、
前記第2導電型半導体層上の活性層と、
前記活性層上の第1導電型半導体層と、
前記第1導電型半導体層内の電流遮断層と、
前記第1導電型半導体層上の第1電極層と、を含む発光素子。 - 前記第1電極層、第2電極層、及び電流遮断層は少なくとも一部分が垂直方向にオーバーラップする請求項10に記載の発光素子。
- 前記電流遮断層は上面、下面及び側面が前記第1導電型半導体層により囲まれて形成される請求項10に記載の発光素子。
- 前記電流遮断層はSiO2、SiNx、TiO2、Ta2O3、SiON、またはSiCN中の少なくともいずれか1つから形成される請求項10に記載の発光素子。
- 前記電流遮断層は複数個に離隔されて形成される請求項10に記載の発光素子。
- 前記第1導電型半導体層は第1窒化物層と第2窒化物層を含み、前記第1窒化物層は前記第2窒化物層より屈折率が小さく、前記電流遮断層は前記第2窒化物層内に形成される請求項15に記載の発光素子。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20080040672A KR20090114826A (ko) | 2008-04-30 | 2008-04-30 | 반도체 발광소자 및 그 제조방법 |
KR10-2008-0040672 | 2008-04-30 | ||
KR10-2008-0042601 | 2008-05-08 | ||
KR1020080042601A KR100986461B1 (ko) | 2008-05-08 | 2008-05-08 | 발광 소자 및 그 제조방법 |
KR20080042603A KR20090116842A (ko) | 2008-05-08 | 2008-05-08 | 발광 소자 및 그 제조방법 |
KR10-2008-0042603 | 2008-05-08 | ||
PCT/KR2009/002300 WO2009134095A2 (ko) | 2008-04-30 | 2009-04-30 | 발광 소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011519484A true JP2011519484A (ja) | 2011-07-07 |
JP5638514B2 JP5638514B2 (ja) | 2014-12-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011507353A Active JP5638514B2 (ja) | 2008-04-30 | 2009-04-30 | 発光素子及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7989834B2 (ja) |
EP (1) | EP2270881B1 (ja) |
JP (1) | JP5638514B2 (ja) |
CN (1) | CN101990714B (ja) |
WO (1) | WO2009134095A2 (ja) |
Cited By (3)
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JP2013138271A (ja) * | 2013-04-12 | 2013-07-11 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
CN103515505A (zh) * | 2012-06-21 | 2014-01-15 | 丰田合成株式会社 | 第iii族氮化物半导体发光器件及其制造方法 |
JP2014183111A (ja) * | 2013-03-18 | 2014-09-29 | Stanley Electric Co Ltd | 半導体発光素子とその製造方法 |
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KR101047634B1 (ko) * | 2008-11-24 | 2011-07-07 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
TWI412161B (zh) * | 2009-11-06 | 2013-10-11 | Semileds Optoelectronics Co | 發光二極體裝置 |
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Also Published As
Publication number | Publication date |
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CN101990714B (zh) | 2012-11-28 |
US20090273003A1 (en) | 2009-11-05 |
US7989834B2 (en) | 2011-08-02 |
EP2270881B1 (en) | 2016-09-28 |
WO2009134095A3 (ko) | 2010-02-11 |
CN101990714A (zh) | 2011-03-23 |
WO2009134095A2 (ko) | 2009-11-05 |
US8624278B2 (en) | 2014-01-07 |
EP2270881A4 (en) | 2011-03-23 |
JP5638514B2 (ja) | 2014-12-10 |
US20110248298A1 (en) | 2011-10-13 |
EP2270881A2 (en) | 2011-01-05 |
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