JP2011510517A - 半導体デバイスのCuメタライゼーションへ選択的低温Ru堆積を統合する方法 - Google Patents
半導体デバイスのCuメタライゼーションへ選択的低温Ru堆積を統合する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 88
- 238000000151 deposition Methods 0.000 title claims abstract description 52
- 230000008021 deposition Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000001465 metallisation Methods 0.000 title description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 147
- 239000002184 metal Substances 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000002243 precursor Substances 0.000 claims description 122
- 230000008569 process Effects 0.000 claims description 46
- 238000000059 patterning Methods 0.000 claims description 31
- 230000008016 vaporization Effects 0.000 claims description 27
- 238000009834 vaporization Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 23
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000005012 migration Effects 0.000 abstract description 5
- 238000013508 migration Methods 0.000 abstract description 5
- 238000005389 semiconductor device fabrication Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 104
- 239000010410 layer Substances 0.000 description 58
- 239000010949 copper Substances 0.000 description 56
- 239000010408 film Substances 0.000 description 48
- 238000012545 processing Methods 0.000 description 46
- 239000000463 material Substances 0.000 description 26
- 238000009826 distribution Methods 0.000 description 22
- 239000012159 carrier gas Substances 0.000 description 18
- 239000012071 phase Substances 0.000 description 16
- 230000009977 dual effect Effects 0.000 description 13
- 239000000203 mixture Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 239000012808 vapor phase Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 CuSiN Chemical class 0.000 description 1
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FEBFYWHXKVOHDI-UHFFFAOYSA-N [Co].[P][W] Chemical compound [Co].[P][W] FEBFYWHXKVOHDI-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
理論に拘泥するわけではないが、本願発明者らは、たとえばCu又はタングステン(W)のような金属表面上で観測されるRu金属の選択堆積には、吸着したCO濃度が金属表面上でよりも誘電体表面上で高いことが少なくとも部分的に起因しているので、吸着したCOとRu3(CO)xとが再結合することで、式(1)のRu3(CO)12を誘電体表面上で再生成しようとする。金属表面上で吸着したCOの濃度が低くなると、金属表面上での吸着したRu3(CO)12のRu金属とCOへの分解速度が、誘電体表面上での分解速度よりも速くなる。
Claims (20)
- 半導体デバイスの作製方法であって:
誘電体層中に凹部を有するパターニング基板を供する工程であって、前記凹部は平坦化されたバルクCu金属によって少なくとも実質的に充填されている工程;
H2、N2、若しくはNH3、又はこれらの混合気体が存在する中で前記バルクCu金属及び前記誘電体膜を熱処理する工程;並びに、
前記の熱処理されたバルクCu金属上にRu金属膜を選択的に堆積する工程;
を有する方法。 - 前記熱処理及び堆積は200℃よりも低い基板温度で実行される、請求項1に記載の方法。
- 前記堆積は100℃〜300℃の基板温度で実行される、請求項1に記載の方法。
- 前記熱処理は200℃よりも低い基板温度で実行される、請求項1に記載の方法。
- 前記熱処理は200℃〜400℃の基板温度で実行される、請求項1に記載の方法。
- 前記Ru金属膜の厚さは1Å〜30Åである、請求項1に記載の方法。
- 前記Ru金属膜の厚さは10Å未満である、請求項1に記載の方法。
- 前記平坦化されたバルクCu金属上での前記Ru金属膜の表面被覆は、前記平坦化されたバルクCu金属を暴露するギャップを有する不完全な状態である、請求項1に記載の方法。
- 前記のRu金属膜を選択的に堆積する工程が:
Ru3(CO)12前駆体気体及びCO気体を含む処理気体を生成する工程;並びに、
熱化学気相成長法において前記処理気体に前記パターニング基板を暴露する工程;
を有し、
前記の処理気体を生成する工程は:
前駆体気化システム内で固体Ru3(CO)12前駆体を40℃〜150℃の温度にまで加熱し、かつ前記固体Ru3(CO)12前駆体を前記温度に維持することで、Ru3(CO)12前駆体気体を生成する工程;
前記加熱中、前駆体気化システム内で前記固体Ru3(CO)12前駆体と接するように前記CO気体を流すことで、生成される前記Ru3(CO)12前駆体気体を前記CO気体中で捕獲する工程;並びに、
前記前駆体気化システムから前記パターニング基板を含む処理チャンバへ前記処理気体を輸送する工程;
を有する、
請求項1に記載の方法。 - 前記凹部は1つ以上の溝及び1つ以上のビアを有する、請求項1に記載の方法。
- 前記パターニング基板は前記凹部内にバリア層をさらに有する、請求項1に記載の方法。
- 前記Ru金属膜上及び前記誘電体層上にコンフォーマルなキャップ層を堆積する工程をさらに有する、請求項1に記載の方法。
- 前記キャップ層を堆積する工程の前に、H2、N2、若しくはNH3、又はこれらの混合気体が存在する中で基板温度を150℃〜400℃にして前記Ru金属膜及び前記誘電体層を熱処理する工程をさらに有する、請求項1に記載の方法。
- 半導体デバイスの作製方法であって:
誘電体層中に凹部を有するパターニング基板を供する工程であって、前記凹部は平坦化されたバルクCu金属によって少なくとも実質的に充填されている工程;
H2が存在する中で200℃未満の基板温度にて前記バルクCu金属及び前記誘電体膜を熱処理する工程;並びに、
熱化学気相成長法においてRu3(CO)12前駆体気体及びCO気体を含む処理気体に前記パターニング基板を暴露することによって、前記の熱処理された平坦化バルクCu金属上にRu金属膜を選択的に堆積する工程;
を有する方法。 - 前記Ru金属膜上及び前記誘電体層上にコンフォーマルなキャップ層を堆積する工程をさらに有する、請求項14に記載の方法。
- 前記キャップ層を堆積する工程の前に、H2、N2、若しくはNH3、又はこれらの混合気体が存在する中で基板温度を150℃〜400℃にして前記Ru金属膜及び前記誘電体層を熱処理する工程をさらに有する、請求項15に記載の方法。
- 前記Ru金属膜の厚さは2Å〜30Åである、請求項14に記載の方法。
- 半導体デバイスの作製方法であって:
誘電体層中に凹部を有するパターニング基板を供する工程であって、前記凹部は平坦化されたバルクCu金属によって少なくとも実質的に充填されている工程;
H2、N2、若しくはNH3、又はこれらの混合気体が存在する中で前記バルクCu金属及び前記誘電体膜を熱処理する工程;並びに、
熱化学気相成長法においてRu3(CO)12前駆体気体及びCO気体を含む処理気体に前記パターニング基板を暴露することによって、前記の熱処理された平坦化バルクCu金属上にRu金属膜を選択的に堆積する工程;
を有する方法。 - 前記Ru金属膜上及び前記誘電体層上にコンフォーマルなキャップ層を堆積する工程をさらに有する、請求項18に記載の方法。
- 前記キャップ層を堆積する工程の前に、H2、N2、若しくはNH3、又はこれらの混合気体が存在する中で基板温度を150℃〜400℃にして前記Ru金属膜及び前記誘電体層を熱処理する工程をさらに有する、請求項19に記載の方法。
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PCT/US2009/031414 WO2009094325A1 (en) | 2008-01-22 | 2009-01-19 | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
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WO2009094325A1 (en) | 2009-07-30 |
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