JP2011249640A - Semiconductor wafer separation unit - Google Patents

Semiconductor wafer separation unit Download PDF

Info

Publication number
JP2011249640A
JP2011249640A JP2010122586A JP2010122586A JP2011249640A JP 2011249640 A JP2011249640 A JP 2011249640A JP 2010122586 A JP2010122586 A JP 2010122586A JP 2010122586 A JP2010122586 A JP 2010122586A JP 2011249640 A JP2011249640 A JP 2011249640A
Authority
JP
Japan
Prior art keywords
wafers
wafer
ingot
separation
fine particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010122586A
Other languages
Japanese (ja)
Other versions
JP4668350B1 (en
Inventor
Tamotsu Sasaki
保 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Et System Eng Co Ltd
ET SYSTEM ENGINEERING CO Ltd
Original Assignee
Et System Eng Co Ltd
ET SYSTEM ENGINEERING CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Et System Eng Co Ltd, ET SYSTEM ENGINEERING CO Ltd filed Critical Et System Eng Co Ltd
Priority to JP2010122586A priority Critical patent/JP4668350B1/en
Priority to PCT/JP2011/002079 priority patent/WO2011148559A1/en
Application granted granted Critical
Publication of JP4668350B1 publication Critical patent/JP4668350B1/en
Publication of JP2011249640A publication Critical patent/JP2011249640A/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor wafer separation unit for definitely separating sliced wafers one by one and the wafers are not damaged by separation.SOLUTION: The semiconductor wafer separation unit includes a separation tank 1 where a separation liquid containing particles P is circulating. As a result, sludge such as a cooling agent or slicing swarf remaining between sliced wafers are removed from spaces between the wafers and discharged from the bottom of the separation tank 1 as slurry. Additionally, the particles P enter and stay in the spaces between the wafers when the sludge is removed from the spaces between the wafers thereby preventing the wafers from sticking with each other and maintaining a clearance between the wafers constant.

Description

本発明は、ブロック状の多結晶シリコンなどのインゴットを所定厚のウェーハに切断した後に１枚ごとに分離する方法に関する。   The present invention relates to a method of separating block-shaped ingots such as polycrystalline silicon into wafers of a predetermined thickness and separating them one by one.

太陽電池基板等に用いられるシリコンウェーハの製造方法は、特許文献１或いは特許文献２に記載されるように、ブロック状の多結晶シリコンのインゴットを接着剤を介して台座などに固定し、この固定したインゴットをワイヤーソーや内周にダイヤモンドブレードを形成した円環状のカッターによって所定厚のウェーハにスライスし、次いで、剥離液に浸漬して、台座からウェーハを分離するようにしている。   As described in Patent Document 1 or Patent Document 2, a manufacturing method of a silicon wafer used for a solar cell substrate or the like is such that a block-shaped polycrystalline silicon ingot is fixed to a pedestal or the like via an adhesive. The ingot is sliced into a wafer having a predetermined thickness by a wire saw or an annular cutter having a diamond blade formed on the inner periphery, and then immersed in a stripping solution to separate the wafer from the pedestal.

一方、ウェーハの厚みはますます薄いものが要求され、最近では１００〜２００μｍになっている。このようにウェーハの厚みが薄くなると、切断後にウェーハ同士が貼り付いてしまい、分離が困難になる。 On the other hand, a thinner wafer is required, and recently it has become 100 to 200 μm. When the thickness of the wafer is thus reduced, the wafers stick together after cutting, making separation difficult.

そこで、非特許文献１に以下に述べる（１）〜（３）の分離方法が提案されている。
（１）スライス後のインゴットを噴流中にセットし、吸着パッドを用いて最上部のウェーハから１枚づつ払い出す方法。
（２）マイクロバブルが発生している水中にスライス後のインゴットを浸漬し、ウェーハ間にマイクロバブルを侵入させ、ローラを用いて最上部のウェーハから１枚づつ払い出す方法。
（３）インゴットをスライスした後、これを斜めにセットして角度とウェーハの厚みを測定し、２枚目のウェーハをストッパで押えた状態で１枚目のウェーハを吸着パッドを用いて払い出す方法。 Therefore, non-patent literature 1 proposes the following separation methods (1) to (3).
(1) A method of setting ingots after slicing in a jet and paying out one by one from the uppermost wafer using a suction pad.
(2) A method of immersing sliced ingots in water in which microbubbles are generated, allowing microbubbles to enter between the wafers, and using a roller to dispense one by one from the uppermost wafer.
(3) After slicing the ingot, this is set obliquely, the angle and the thickness of the wafer are measured, and the first wafer is dispensed using the suction pad while the second wafer is held by the stopper. Method.

特開２００９−２００３７４号公報JP 2009-200374 A 特開２００９−２５４１４１号公報JP 2009-254141 A

Ｅｌｅｃｔｒｏｎｉｃ Ｊｏｕｒｎａｌ ２０１０年５月号 Ｐ８３〜８７Electronic Journal May 2010, P83-87

上記の非特許文献１に開示される（１）〜（３）の分離方法は、ウェーハに大きな力が作用してウェーハが破損したり、複数枚同時に分離されたり、分離に時間がかかる或いは分離までの時間が一定にならないなど多くの問題点が解決されていない。   In the separation methods (1) to (3) disclosed in Non-Patent Document 1 described above, a large force acts on the wafer, the wafer is damaged, a plurality of sheets are separated at the same time, or separation takes time or is separated. Many problems are not solved, such as the time until the time is not constant.

上記の課題を解決するため本発明に係る半導体ウェーハの分離方法は、多結晶シリコン等のインゴットを接着剤を介してホルダに固定し、この固定されたインゴットをワイヤーソーなどの切断治具にて所定厚のウェーハに切断し、切断後のインゴットを微粒子が浮遊する液体中に浸漬し、前記微粒子を液体とともに切断されたウェーハ間に侵入させ、この微粒子によってウェーハ間の間隔を維持した状態で、１枚づつウェーハを分離して取出すようにした。   In order to solve the above problems, a semiconductor wafer separation method according to the present invention fixes an ingot such as polycrystalline silicon to a holder through an adhesive, and the fixed ingot is cut using a cutting jig such as a wire saw. Cutting into a wafer of a predetermined thickness, immersing the ingot after cutting in a liquid in which fine particles float, allowing the fine particles to enter between the wafers cut together with the liquid, and maintaining the distance between the wafers by the fine particles, The wafers were separated and taken out one by one.

前記微粒子としては切断されたウェーハ間に侵入し得る径の粒子であれば特にその材質は限定されないが、ウェーハ表面に傷を付けず取り扱いの容易性を考慮すると、樹脂、ガラス、セラミックなどからなり且つ角がなく球形に近いものが好ましい。
前記微粒子を浮遊させる液体としては水あるいは従来の分離液とする。また微粒子が浮遊した液体を循環させることで、切断されたウェーハ間に微粒子が侵入しやすくなる。尚、液体を循環させる代わりに切断されたウェーハをインゴットごと往復動させてもよい。 The particle is not particularly limited as long as it is a particle having a diameter that can penetrate between the cut wafers, but considering the ease of handling without scratching the wafer surface, it is made of resin, glass, ceramic, etc. In addition, those having no corners and being nearly spherical are preferable.
The liquid for suspending the fine particles is water or a conventional separation liquid. Further, by circulating the liquid in which the fine particles are suspended, the fine particles easily enter between the cut wafers. Instead of circulating the liquid, the cut wafer may be reciprocated together with the ingot.

微粒子が浮遊した液体中に切断されたウェーハをインゴットごと浸漬した後にホルダをインゴットから外すが、個々のウェーハがばらばらにならないように、押え板で切断されたウェーハのブロックの両サイドを押えるか、バスケットに入れることが好ましい。   Remove the holder from the ingot after immersing the cut wafer in the liquid where the fine particles are suspended in the ingot. It is preferable to put in a basket.

また、間に微粒子が侵入して分離されているウェーハの取出しは、ウェーハを上下方向に積層し、吸着パッドなどのピックアップ治具を用いて最上位のウェーハから順に行う。このとき最上位のウェーハの下面をブラシで取出し方向と逆に払拭しつつ行うことで、２枚重なったまま取出すことが防止でき、また下面に付着している微粒子も除去できる。   In addition, the wafers separated by the intrusion of fine particles are stacked in the vertical direction, and sequentially from the top wafer using a pickup jig such as a suction pad. At this time, by wiping the lower surface of the uppermost wafer with a brush in the direction opposite to the removal direction, it is possible to prevent the two wafers from being overlapped and to remove fine particles adhering to the lower surface.

本発明によれば、切断後のウェーハを１枚づつ確実に分離して払い出すことができる。また、分離の際にウェーハを破損する割合が極めて少なくなり、更に分離に要する時間を一定にでき且つ短縮できる。 According to the present invention, the cut wafers can be reliably separated and dispensed one by one. In addition, the rate of breakage of the wafer during separation is extremely small, and the time required for separation can be made constant and shortened.

本発明に係るウェーハの分離方法の実施に用いる装置の正面図The front view of the apparatus used for implementation of the wafer separation method concerning the present invention 同装置の平面図Plan view of the device 図１のＡ−Ａ方向矢視図AA direction arrow view of FIG. 図１のＢ−Ｂ方向矢視図BB direction view of FIG. （ａ）はワイヤーソーによる切断工程を説明した図、（ｂ）は切断後のインゴットの斜視図(A) is the figure explaining the cutting process by a wire saw, (b) is a perspective view of the ingot after a cutting | disconnection. 切断後のインゴットを浸漬した分離槽内の状態を説明した図The figure explaining the state in the separation tank which dipped the ingot after cutting ウェーハ間に微粒子が侵入している状態を説明した図A diagram explaining the state of fine particles entering between wafers ウェーハを分離してカセットに収納するまでの工程を説明した図The figure explaining the process until the wafer is separated and stored in the cassette ウェーハを分離する部分の拡大図Enlarged view of the part separating the wafers

以下に本発明の実施の形態を添付図面に基づいて説明する。
分離装置は分離槽１に隣接してピックアップ搬送機構２を配置し、ピックアップ搬送機構２に隣接して収納カセット３を配置し、この収納カセット３を昇降装置４によって所定のピッチで昇降動させるようにしている。 Embodiments of the present invention will be described below with reference to the accompanying drawings.
The separation device has a pickup transport mechanism 2 disposed adjacent to the separation tank 1, a storage cassette 3 disposed adjacent to the pickup transport mechanism 2, and the storage cassette 3 is moved up and down at a predetermined pitch by the lifting device 4. I have to.

分離槽１内には切断後の多結晶シリコンなどのインゴットＩｎを載置するボート５が配置されている。インゴットＩｎは図５（ａ）及び（ｂ）に示すように、一面が接着剤を介してホルダ６に固定され、この状態でワイヤーソー７などの切断治具を用いて所定厚みに切断する。この場合、ホルダ６に掛かる位置まで切ることで完全に切断することができる。   A boat 5 for placing an ingot In such as polycrystalline silicon after cutting is disposed in the separation tank 1. As shown in FIGS. 5A and 5B, one surface of the ingot In is fixed to the holder 6 via an adhesive, and in this state, the ingot In is cut to a predetermined thickness using a cutting jig such as a wire saw 7. In this case, it is possible to cut completely by cutting to the position where it hangs on the holder 6.

前記ボート５は軸８を中心として回動自在とされ、モータ等を駆動することで水平状態から起立状態になり、更に起立状態のボート５の下方に昇降装置９を配置し、この昇降装置９によって上下方向に積層されたウェーハＷを１枚づつ上昇させるようにしている。   The boat 5 is rotatable about a shaft 8 and is driven from a horizontal state by driving a motor or the like. Further, a lifting device 9 is disposed below the standing boat 5. Thus, the wafers W stacked in the vertical direction are raised one by one.

また分離槽１に沿ってプッシャー１０を配置している。このプッシャー１０は水平状態のボート５に載置されている切断後のインゴットＩｎをボートの端板に押し付けるものでレール１１に沿って往復動可能とされている。   A pusher 10 is disposed along the separation tank 1. The pusher 10 presses a cut ingot In placed on a horizontal boat 5 against an end plate of the boat, and is capable of reciprocating along a rail 11.

また図６に示すように、分離槽１内には加温された分離液が満たされ、この分離液を循環させる配管１２が分離槽１に設けられ、この配管１２の途中に微粒子Ｐの添加部１３が設けられている。微粒子Ｐとしては、樹脂、ガラス或いはセラミック製ビーズを用い、平均径は切断されたウェーハ間に侵入し得る径とする。   As shown in FIG. 6, the separation tank 1 is filled with a heated separation liquid, and a pipe 12 for circulating the separation liquid is provided in the separation tank 1, and fine particles P are added to the middle of the pipe 12. A portion 13 is provided. As the fine particles P, resin, glass, or ceramic beads are used, and the average diameter is a diameter that can enter between the cut wafers.

更に分離槽１の内壁には分離液を攪拌するための超音波振動装置１４またはバブリング装置が取付けられ、分離槽１内において切断後のインゴットＩｎの両側面を押え板１５で押えることで切断後のウェーハ間の隙間を一定に保持している。尚、ウェーハを傷つけないため、押え板１５には弾性体を貼り付け、この弾性体をインゴットＩｎに接触させている。   Further, an ultrasonic vibration device 14 or a bubbling device for agitating the separation liquid is attached to the inner wall of the separation tank 1, and after cutting by pressing both side surfaces of the ingot In after being cut in the separation tank 1 with the holding plate 15. The gap between the wafers is kept constant. In order not to damage the wafer, an elastic body is attached to the holding plate 15 and this elastic body is brought into contact with the ingot In.

一方、ピックアップ搬送機構２は起立状態のボート５にセットされている切断後のインゴットＩｎの最上段のウェーハの先部を吸着して持ち上げる吸着パッド１６と、この吸着パッド１６が往復動するレール１７と、吸着パッド１６から受け取ったウェーハＷを１枚づつ収納カセット３に送り込むコンベアベルト１８と、コンベアベルト１８よりも上流側に配置されるブラシローラ１９を備えている。   On the other hand, the pick-up transport mechanism 2 sucks and lifts the tip of the uppermost wafer of the ingot In after being set in the standing boat 5 and a rail 17 on which the suction pad 16 reciprocates. A conveyor belt 18 for feeding the wafers W received from the suction pad 16 to the storage cassette 3 one by one, and a brush roller 19 disposed on the upstream side of the conveyor belt 18.

ブラシローラ１９は吸着パッド１６によるウェーハＷの搬送方向と反対方向に回転する。その結果ウェーハＷの下面に付着している微粒子Ｐは除去される。またブラシローラ１９は搬送方向と反対方向に回転しているため、万一最上段のウェーハが２枚重なっている場合でも、これらを分離することができる。 The brush roller 19 rotates in a direction opposite to the conveyance direction of the wafer W by the suction pad 16. As a result, the fine particles P adhering to the lower surface of the wafer W are removed. Further, since the brush roller 19 rotates in the direction opposite to the conveyance direction, even when two uppermost wafers are overlapped, they can be separated.

以上の分離装置を用いた分離方法を以下に説明する。
先ず、図５（ａ）に示すように、インゴットＩｎの一面をワックスなどの接着剤を介してホルダ６に固定し、この状態でインゴットＩｎをワイヤーソー７を用いて所定厚みのウェーハに切断する。切断後の状態を図５（ｂ）に示している。 A separation method using the above separation apparatus will be described below.
First, as shown in FIG. 5A, one surface of the ingot In is fixed to the holder 6 via an adhesive such as wax, and in this state, the ingot In is cut into a wafer having a predetermined thickness using the wire saw 7. . The state after cutting is shown in FIG.

次いで図６に示すように、切断後のインゴットＩｎの両面を押え板１５で保持したまま、分離槽１内に浸漬する。分離槽１内の分離液（温水）の温度は約８０℃であるので、ホルダ６とインゴットＩｎとの間のワックス（接着剤）は溶解し、また超音波振動装置１４またはバブリング装置からの振動も加わるため、ホルダ６はインゴットＩｎから容易に取り外される。
尚、インゴットＩｎの下面をホルダ６で保持している場合も同様にホルダ６をインゴットＩｎから取り外す。 Next, as shown in FIG. 6, the both sides of the cut ingot In are immersed in the separation tank 1 while being held by the pressing plate 15. Since the temperature of the separation liquid (hot water) in the separation tank 1 is about 80 ° C., the wax (adhesive) between the holder 6 and the ingot In dissolves, and vibration from the ultrasonic vibration device 14 or the bubbling device. Therefore, the holder 6 is easily detached from the ingot In.
Even when the lower surface of the ingot In is held by the holder 6, the holder 6 is similarly detached from the ingot In.

前記分離槽１内では、微粒子Ｐを含んだ分離液が循環しているため、切断されたウェーハ間に存在している冷却剤や切り屑等のスラッジはウェーハ間の隙間から除去され、分離槽１の底面からスラリーとして排出される。   Since the separation liquid containing the fine particles P circulates in the separation tank 1, sludge such as coolant and chips existing between the cut wafers is removed from the gap between the wafers, and the separation tank 1 is discharged as a slurry from the bottom surface.

また、図７に示すように、ウェーハ間からはスラッジが除かれるとともに微粒子Ｐが侵入して留まり、ウェーハ同士の張り付きを防止するとともに間隔を一定に維持する。 In addition, as shown in FIG. 7, sludge is removed from between the wafers and the fine particles P enter and remain, preventing sticking between the wafers and keeping the interval constant.

ホルダ６が除かれたインゴットＩｎはプッシャー１０によってボート５の端板に押し付けられる。そして図８に示すように、軸８を中心としてボート５を９０°回動させ垂直状態とする。この状態で切断されたウェーハＷは上下方向に積層され且つウェーハ間には微粒子Ｐが介在している。 The ingot In from which the holder 6 is removed is pressed against the end plate of the boat 5 by the pusher 10. Then, as shown in FIG. 8, the boat 5 is rotated 90 ° about the shaft 8 to be in a vertical state. The wafers W cut in this state are stacked in the vertical direction, and fine particles P are interposed between the wafers.

次いで、昇降装置９によってボート５に載置されている切断されたインゴットＩｎを所定位置まで上昇させ、図９に示すように、最上段のウェーハＷの先端部を吸着パッド１６で吸着し、吸着パッド１６を水平方向に移動して最上段のウェーハＷをコンベアベルト１８に受け渡す。 Next, the lifted device 9 raises the cut ingot In placed on the boat 5 to a predetermined position, and as shown in FIG. 9, the tip of the uppermost wafer W is sucked by the suction pad 16 and sucked. The pad 16 is moved in the horizontal direction and the uppermost wafer W is transferred to the conveyor belt 18.

このとき、ウェーハＷの下面は移動方向と反対方向に回転するブラシローラ１９にて払拭されるため、ウェーハＷの下面に付着している微粒子Ｐなどは除去され、且つ２枚重なって送られることも防止される。 At this time, since the lower surface of the wafer W is wiped by the brush roller 19 that rotates in the direction opposite to the moving direction, the fine particles P and the like adhering to the lower surface of the wafer W are removed and the two sheets are sent in an overlapping manner. Is also prevented.

分離されたウェーハＷはコンベアベルト１８によって収納カセット３の内壁に形成された水平方向のスリットに挿入保持される。またウェーハＷが１枚収納される毎に収納カセット３は１段（スリットの間隔）づつ上昇又は下降し、収納カセット３内に一定間隔で所定枚数（通常１００枚）のウェーハＷが収納される。 The separated wafer W is inserted and held in a horizontal slit formed on the inner wall of the storage cassette 3 by the conveyor belt 18. Each time one wafer W is stored, the storage cassette 3 moves up or down by one stage (slit interval), and a predetermined number (usually 100) of wafers W are stored in the storage cassette 3 at regular intervals. .

本発明に係る半導体ウェーハの分離方法は、通常の集積回路用基板や太陽電池基板などを分離する場合に利用できる。 The method for separating a semiconductor wafer according to the present invention can be used for separating a normal substrate for an integrated circuit, a solar cell substrate, and the like.

１…分離槽、２…ピックアップ搬送機構、３…収納カセット、４…昇降装置、５…ボート、６…ホルダ、７…ワイヤーソー、８…軸、９…昇降装置、１０…プッシャー、１１…レール、１２…配管、１３…添加部、１４…超音波振動装置、１５…押え板、１６…吸着パッド、１７…レール、１８…コンベアベルト、１９…ブラシローラ、Ｉｎ…半導体の多結晶インゴット、Ｐ…微粒子、Ｗ…ウェーハ。 DESCRIPTION OF SYMBOLS 1 ... Separation tank, 2 ... Pick-up conveyance mechanism, 3 ... Storage cassette, 4 ... Lifting device, 5 ... Boat, 6 ... Holder, 7 ... Wire saw, 8 ... Shaft, 9 ... Lifting device, 10 ... Pusher, 11 ... Rail , 12 ... Piping, 13 ... Addition part, 14 ... Ultrasonic vibration device, 15 ... Presser plate, 16 ... Suction pad, 17 ... Rail, 18 ... Conveyor belt, 19 ... Brush roller, In ... Semiconductor polycrystalline ingot, P ... fine particles, W ... wafer.

本発明は、ブロック状の多結晶シリコンなどのインゴットを所定厚のウェーハに切断した後に１枚ごとに分離する装置に関する。 The present invention relates to an apparatus for separating a block-shaped ingot such as polycrystalline silicon into wafers having a predetermined thickness and separating them one by one.

上記の課題を解決するため本発明に係る分離装置は、ホルダに接着剤を介して固定されるとともに切断治具にて所定厚のウェーハに切断された半導体のインゴットを１枚づつ分離する半導体ウェーハの分離装置であって、ウェーハ間に侵入する微粒子が浮遊する分離液が満たされた分離槽を備え、この分離槽内には、切断された半導体のインゴットの両側面を弾性体で押えてウェーハ間の隙間を一定に保持する押え板と、前記切断された半導体のインゴットが載置されるとともに水平状態と垂直状態との間で回動可能なボートと、前記垂直状態のボートに載置されている半導体のインゴットをウェーハの厚さ１枚づつ上昇させる昇降装置が設けられ、また前記分離槽に隣接してピックアップ搬送機構が設けられ、このピックアップ搬送機構には搬送されるウェーハの下面を搬送方向と逆方向に払拭するブラシローラが設けられた構成である。 In order to solve the above problems, a separation apparatus according to the present invention is a semiconductor wafer which is fixed to a holder via an adhesive and separates semiconductor ingots cut into wafers of a predetermined thickness by a cutting jig one by one. The separation apparatus is provided with a separation tank filled with a separation liquid in which fine particles entering between the wafers float, and the both sides of the cut semiconductor ingot are held in the separation tank by an elastic body. A holding plate that keeps the gap between them constant, a boat that is mounted with the cut semiconductor ingot and that is rotatable between a horizontal state and a vertical state, and a boat that is mounted on the vertical state boat A lifting and lowering device for raising the semiconductor ingot one wafer at a time is provided, and a pickup transport mechanism is provided adjacent to the separation tank. Brush roller for wiping the bottom surface of the wafer to be conveyed in the direction opposite to the conveying direction is configured provided.

Claims (3)

半導体のインゴットを接着剤を介してホルダに固定し、この固定されたインゴットを切断治具にて所定厚のウェーハに切断し、切断後のインゴットを微粒子が浮遊する液体中に浸漬し、前記微粒子を液体とともに切断されたウェーハ間に侵入させ、この微粒子によってウェーハ間の間隔を維持した状態で、１枚づつウェーハを分離して取出すことを特徴とする半導体ウェーハの分離方法。 A semiconductor ingot is fixed to a holder via an adhesive, the fixed ingot is cut into a wafer of a predetermined thickness with a cutting jig, and the cut ingot is immersed in a liquid in which fine particles float, and the fine particles A method for separating a semiconductor wafer, wherein the wafer is separated between the wafers cut together with the liquid, and the wafers are separated and taken out one by one in a state where the distance between the wafers is maintained by the fine particles. 請求項１に記載の半導体ウェーハの分離方法において、前記微粒子が浮遊する液体は循環流であることを特徴とする半導体ウェーハの分離方法。 2. The method for separating a semiconductor wafer according to claim 1, wherein the liquid in which the fine particles are suspended is a circulating flow. 請求項１に記載の半導体ウェーハの分離方法において、前記ウェーハの取出しは、最上位のウェーハから順に行うとともに最上位のウェーハの下面をブラシで取出し方向と逆に払拭しつつ行うことを特徴とする半導体ウェーハの分離方法。 2. The semiconductor wafer separation method according to claim 1, wherein the wafers are taken out in order from the uppermost wafer and the lower surface of the uppermost wafer is wiped with a brush in the direction opposite to the takeout direction. Semiconductor wafer separation method.
JP2010122586A 2010-05-28 2010-05-28 Semiconductor wafer separator Expired - Fee Related JP4668350B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010122586A JP4668350B1 (en) 2010-05-28 2010-05-28 Semiconductor wafer separator
PCT/JP2011/002079 WO2011148559A1 (en) 2010-05-28 2011-04-07 Apparatus for separating semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010122586A JP4668350B1 (en) 2010-05-28 2010-05-28 Semiconductor wafer separator

Publications (2)

Publication Number Publication Date
JP4668350B1 JP4668350B1 (en) 2011-04-13
JP2011249640A true JP2011249640A (en) 2011-12-08

Family

ID=44021702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010122586A Expired - Fee Related JP4668350B1 (en) 2010-05-28 2010-05-28 Semiconductor wafer separator

Country Status (2)

Country Link
JP (1) JP4668350B1 (en)
WO (1) WO2011148559A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185830A (en) * 2014-03-26 2015-10-22 株式会社巴川製紙所 Adhesive member for temporary fixation for wire-saw dicing method and wire-saw dicing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7176327B2 (en) * 2018-09-28 2022-11-22 住友金属鉱山株式会社 WAFER MANUFACTURING METHOD AND WAFER PRESSING JIG
CN112847851A (en) * 2020-12-31 2021-05-28 常州时创能源股份有限公司 Processing method of single crystal silicon rod, silicon wafer, battery piece and photovoltaic module
CN115972418B (en) * 2023-03-20 2023-07-04 西安中威新材料有限公司 Silicon carbide ceramic wafer boat tooth-forming equipment for wafer diffusion

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457730A (en) * 1987-08-28 1989-03-06 Tel Sagami Ltd Wafer shifting method
JPS6489388A (en) * 1987-09-29 1989-04-03 Matsushita Electric Ind Co Ltd Board cleaning device
JPH01304732A (en) * 1988-06-01 1989-12-08 Nec Corp Semiconductor wafer washer
JPH06275582A (en) * 1993-03-18 1994-09-30 Sumitomo Electric Ind Ltd Wafer machining device
JPH08172065A (en) * 1994-12-16 1996-07-02 Shibayama Kikai Kk Method of cleaning semiconductor wafer
JPH09237770A (en) * 1995-12-25 1997-09-09 Nippei Toyama Corp Wafer processing system
JPH09326374A (en) * 1996-06-04 1997-12-16 Mitsubishi Materials Corp Wafer peeling off method and device
JPH11274271A (en) * 1998-03-24 1999-10-08 Dainippon Screen Mfg Co Ltd Substrate treating device
JP2008545268A (en) * 2005-07-01 2008-12-11 アール・イー・シー・スキャンウェハー・アー・エス Reduction of attractive force between silicon wafers

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457730A (en) * 1987-08-28 1989-03-06 Tel Sagami Ltd Wafer shifting method
JPS6489388A (en) * 1987-09-29 1989-04-03 Matsushita Electric Ind Co Ltd Board cleaning device
JPH01304732A (en) * 1988-06-01 1989-12-08 Nec Corp Semiconductor wafer washer
JPH06275582A (en) * 1993-03-18 1994-09-30 Sumitomo Electric Ind Ltd Wafer machining device
JPH08172065A (en) * 1994-12-16 1996-07-02 Shibayama Kikai Kk Method of cleaning semiconductor wafer
JPH09237770A (en) * 1995-12-25 1997-09-09 Nippei Toyama Corp Wafer processing system
JPH09326374A (en) * 1996-06-04 1997-12-16 Mitsubishi Materials Corp Wafer peeling off method and device
JPH11274271A (en) * 1998-03-24 1999-10-08 Dainippon Screen Mfg Co Ltd Substrate treating device
JP2008545268A (en) * 2005-07-01 2008-12-11 アール・イー・シー・スキャンウェハー・アー・エス Reduction of attractive force between silicon wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185830A (en) * 2014-03-26 2015-10-22 株式会社巴川製紙所 Adhesive member for temporary fixation for wire-saw dicing method and wire-saw dicing method

Also Published As

Publication number Publication date
JP4668350B1 (en) 2011-04-13
WO2011148559A1 (en) 2011-12-01

Similar Documents

Publication Publication Date Title
CN110014336B (en) Wafer generation device and transfer tray
KR101616765B1 (en) Wafer separating apparatus, wafer separating/transferring apparatus, wafer separating method, wafer separating/transferring method and solar cell wafer separating/transferring, method
TWI758505B (en) Wafer generation device
KR101922262B1 (en) Peeling apparatus, peeling system and peeling method
JP7164396B2 (en) wafer generator
KR101847661B1 (en) Delamination system
JP2007160431A (en) Cutting method using wire saw and cut work receiving member of wire saw
JPH0563058A (en) Device and method of automatically separating superposed wafer
JP4668350B1 (en) Semiconductor wafer separator
JP5965316B2 (en) Wafer separation apparatus, wafer separation transfer apparatus, wafer separation method, wafer separation transfer method, and solar cell wafer separation transfer method
KR20120086873A (en) Apparatus and method for removing wafer from ingot
TW201607628A (en) Cleaning Device, Peeling System, Cleaning Method and Computer-Readable Storage Medium
EP2711978A1 (en) Method of making wafers
US9390949B2 (en) Wafer debonding and cleaning apparatus and method of use
JP2005019823A (en) Manufacturing method of semiconductor substrate
JP2006019354A (en) Processing apparatus
JP5539111B2 (en) Cutting equipment
JP5464696B2 (en) Submerged wafer isolation method and submerged wafer isolation apparatus
JP6325906B2 (en) Submerged wafer isolation method and submerged wafer isolation device
JP5646897B2 (en) Wafer single wafer processing method and apparatus
JPH069512Y2 (en) Wafer storage device in underwater cassette
EP2944444A1 (en) Wafer processing method
CN109701961A (en) Ceramic disc cleaning device
JP6153886B2 (en) Cleaning device, peeling system, cleaning method, program, and computer storage medium
TW201324657A (en) Dicing device and production method of semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100604

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100604

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100702

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100706

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101019

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110111

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110112

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140121

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4668350

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees