TW201324657A - Dicing device and production method of semiconductor device - Google Patents

Dicing device and production method of semiconductor device Download PDF

Info

Publication number
TW201324657A
TW201324657A TW101134184A TW101134184A TW201324657A TW 201324657 A TW201324657 A TW 201324657A TW 101134184 A TW101134184 A TW 101134184A TW 101134184 A TW101134184 A TW 101134184A TW 201324657 A TW201324657 A TW 201324657A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
cutting
washing liquid
stage
inclination angle
Prior art date
Application number
TW101134184A
Other languages
Chinese (zh)
Inventor
Yoshinari Marushima
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW201324657A publication Critical patent/TW201324657A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The placement surface (10a) of a stage (10) is supported so as to have a tilt angle (theta) from a reference horizontal surface (A) orthogonal to the vertical direction in a process of dicing while pouring cleaning water. This is performed in order to reduce the cost involved in manufacturing a semiconductor device. The tilt angle (theta) is set so as to be no smaller than the angle at which the pooling of the cleaning water blown onto a semiconductor wafer placed on the stage (10) begins to be disrupted.

Description

切割裝置及半導體裝置之製造方法 Cutting device and method of manufacturing semiconductor device

本發明係關於一種用於半導體裝置之製造之切割裝置。 The present invention relates to a cutting device for the manufacture of a semiconductor device.

半導體裝置之製造步驟中，通常為自半導體晶圓切出元件而進行切割。 In the manufacturing steps of the semiconductor device, the dicing is usually performed by cutting out the component from the semiconductor wafer.

圖13表示先前用以實現切割方法之切割裝置之鳥瞰圖。 Figure 13 shows a bird's eye view of a cutting device previously used to implement the cutting method.

圖13所示之切割裝置中，首先於貼附在搬送裝置用之框架之切割膠帶上貼附半導體晶圓。接著，將貼附有半導體晶圓之框架以半導體晶圓貼附側向上地設置於切割裝置之載物台後，藉由切割用刀片沿著特定之切割線切斷半導體晶圓。此時，為去除切削屑與切割用刀片及半導體晶圓之冷卻，邊自噴嘴射出洗液(以下稱為洗液)邊進行切割操作。 In the cutting device shown in Fig. 13, first, a semiconductor wafer is attached to a dicing tape attached to a frame for a transfer device. Next, the frame to which the semiconductor wafer is attached is placed on the stage of the dicing apparatus with the semiconductor wafer attached to the side, and the semiconductor wafer is cut along the specific dicing line by the dicing blade. At this time, in order to remove the cooling of the cutting chips, the cutting blade, and the semiconductor wafer, the cutting operation is performed while discharging the washing liquid (hereinafter referred to as washing liquid) from the nozzle.

普通切割裝置係如圖14所示，切割裝置加工區域底面側設置有載物台，且於該載物台上載置有搬送半導體晶圓之框架，並於與該框架之載置面對向之、切割裝置加工區域頂面側設置有切割刀片。 As shown in FIG. 14, the ordinary cutting device is provided with a stage on the bottom surface side of the processing area of the cutting device, and a frame for transporting the semiconductor wafer is placed on the stage, and is placed facing the frame. A cutting blade is disposed on a top side of the processing area of the cutting device.

通常如圖15所示，切割刀片之中心軸(刀片中心軸)之軸方向係相對於載物台之框架載置面平行地設定，進而相對於正交於鉛垂方向之基準水平面亦平行地設定。因此，切割中自噴嘴射出之洗液容易積壓於半導體晶圓上。 Generally, as shown in FIG. 15, the axial direction of the central axis (blade central axis) of the cutting blade is set in parallel with respect to the frame mounting surface of the stage, and is also parallel with respect to the reference horizontal plane orthogonal to the vertical direction. set up. Therefore, the washing liquid that is ejected from the nozzle during cutting is likely to be accumulated on the semiconductor wafer.

因此，先前之切割裝置中，邊射出洗液邊進行切割操作之情形，如圖16所示，貼附有半導體晶圓之框架中，自切 割部分或晶圓端A、B至切割膠帶與半導體晶圓之間洗液滲入，且切割膠帶之黏著劑與洗液發生反應，存在黏著劑之黏著力變弱，切割膠帶自半導體晶圓脫落之風險。 Therefore, in the prior cutting device, the cutting operation is performed while the washing liquid is being sprayed, as shown in FIG. 16, in the frame to which the semiconductor wafer is attached, self-cutting The cutting portion or the wafer ends A and B are infiltrated into the washing liquid between the dicing tape and the semiconductor wafer, and the adhesive of the dicing tape reacts with the washing liquid, the adhesive force of the adhesive is weak, and the dicing tape is detached from the semiconductor wafer. Risk.

因此，專利文獻1中，揭示有一種藉由於半導體晶圓之切割膠帶之貼附面側形成斥水性膜，防止切割膠帶自半導體晶圓脫落之半導體裝置之製造方法。 Therefore, Patent Document 1 discloses a method of manufacturing a semiconductor device in which a repellency tape is prevented from being detached from a semiconductor wafer by forming a water repellent film on the bonding surface side of the dicing tape of the semiconductor wafer.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本公開專利公報「特開平10-270387號公報(1998年1月9日公開)」 [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 10-270387 (published on January 9, 1998)

然而，如專利文獻1中所揭示般，於半導體晶圓之切割膠帶貼附面側形成斥水性膜之情形，需要新增加於半導體晶圓中形成斥水性膜之步驟與去除所形成之斥水性膜之步驟，故會產生半導體裝置之製造之時間與成本增加之問題。 However, as disclosed in Patent Document 1, in the case where a water repellent film is formed on the side of the dicing tape attached to the semiconductor wafer, it is necessary to newly add a step of forming a water repellent film in the semiconductor wafer and remove the water repellency formed. The step of the film causes a problem of increasing the time and cost of manufacturing the semiconductor device.

而且，若新增加斥水性膜之形成步驟及去除步驟，則加工時半導體晶圓上亦會承受不必要的應力。 Moreover, if the formation step and the removal step of the water repellent film are newly added, unnecessary stress is also applied to the semiconductor wafer during processing.

因此，作為斥水性膜，考慮使用無需去除形成之斥水性膜，而可直接作為半導體裝置使用之矽氧化膜，但半導體晶圓之厚度增大，難以實現半導體裝置之薄膜化。 Therefore, as the water repellent film, it is conceivable to use a tantalum oxide film which can be directly used as a semiconductor device without removing the water repellent film formed, but the thickness of the semiconductor wafer is increased, and it is difficult to achieve thinning of the semiconductor device.

又，作為斥水性膜，使用光阻劑、樹脂、橡膠材料之膜，而形成於半導體晶圓之切割膠帶貼附面側之情形，由 於同膜之剛性較低，故切割時半導體晶圓晃動，發生龜裂或碎屑等加工問題之可能性較高。 In addition, as a water repellent film, a film of a photoresist, a resin, or a rubber material is used to form a dicing tape on the side of the dicing tape of the semiconductor wafer. The rigidity of the film is low, so the semiconductor wafer is shaken during cutting, and there is a high possibility of processing problems such as cracks or chips.

因此，根據先前之切割裝置，難以提高半導體裝置之良率，且製造步驟亦增加，故產生半導體裝置之製造成本增加之問題。 Therefore, according to the prior cutting device, it is difficult to increase the yield of the semiconductor device, and the number of manufacturing steps is also increased, so that the manufacturing cost of the semiconductor device is increased.

本發明係鑒於上述問題研究而成者，其目的在於提供一種切割裝置，其在不增加新的步驟(斥水性膜之形成步驟、去除步驟)下，防止因洗液之向切割膠帶之黏著劑與半導體晶圓之間之滲入所致的半導體晶圓自切割膠帶脫落，藉此可降低半導體裝置之製造成本。 The present invention has been made in view of the above problems, and an object thereof is to provide a cutting device which prevents an adhesive for cutting a tape due to a washing liquid without adding a new step (a step of forming a water repellent film, a removing step). The semiconductor wafer due to the infiltration with the semiconductor wafer is detached from the dicing tape, whereby the manufacturing cost of the semiconductor device can be reduced.

為解決上述問題，本發明之切割裝置之特徵在於包括：載物台，其藉由切割膠帶之黏著劑之黏著力而將半導體晶圓固定載置；切割刀片，其旋轉之中心軸與上述載物台之半導體晶圓載置面平行；及洗液供給機構，其於以上述切割刀片切割半導體晶圓時，向切割部位噴附洗液；且至少於切割時，上述載物台之半導體晶圓載置面係以自正交於鉛垂方向之基準水平面具有傾斜角之方式受支持，上述傾斜角係設定為向載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰的角度以上。 In order to solve the above problems, the cutting device of the present invention is characterized in that it comprises a stage for fixedly mounting a semiconductor wafer by an adhesive force of an adhesive for cutting a tape; a cutting blade, a central axis of rotation thereof and the above-mentioned load The semiconductor wafer mounting surface of the object stage is parallel; and the liquid supply mechanism is configured to spray the cleaning liquid to the cutting portion when the semiconductor wafer is cut by the cutting blade; and at least the semiconductor wafer of the stage is loaded during cutting The mounting surface is supported by a tilt angle from a reference horizontal plane orthogonal to the vertical direction, the tilt angle being set to a state of retention of the washing liquid sprayed onto the semiconductor wafer placed on the stage. The angle of the crash is above.

為解決上述之問題，本發明之半導體裝置之製造方法之特徵在於，其係對藉由切割膠帶之黏著劑之黏著力而固定載置於載物台上之半導體晶圓一面噴附洗液一面進行切割者，且上述載物台之半導體晶圓載置面以自正交於鉛垂方 向之基準水平面具有傾斜角之方式受支持，上述傾斜角設定為向載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰的角度以上之狀態下，進行上述切割。 In order to solve the above problems, the method for fabricating a semiconductor device according to the present invention is characterized in that a side of a semiconductor wafer mounted on a stage is attached to a side of a washing liquid by an adhesive force of an adhesive for cutting a tape. Cutting the person, and the semiconductor wafer mounting surface of the stage is self-orthogonal to the vertical side The reference horizontal plane is supported so as to have an inclination angle, and the inclination angle is set to be equal to or higher than a state in which the retention state of the washing liquid sprayed on the semiconductor wafer placed on the stage starts to collapse, and the cutting is performed. .

根據上述構成，至少於切割時，上述載物台之半導體晶圓載置面係以自正交於鉛垂方向之基準水平面具有傾斜角之方式支持，且上述傾斜角係設定為向載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰的角度以上，藉此於切割過程中噴附至半導體晶圓上之洗液係自該半導體晶圓上立即流落，故可抑制切割過程中半導體晶圓上滯留洗液之狀況。 According to the above configuration, at least at the time of dicing, the semiconductor wafer mounting surface of the stage is supported so as to have an inclination angle from a reference horizontal plane orthogonal to the vertical direction, and the inclination angle is set to be placed on the above The state in which the retention state of the washing liquid sprayed on the semiconductor wafer of the stage starts to collapse, whereby the washing liquid sprayed onto the semiconductor wafer during the cutting process immediately flows down from the semiconductor wafer, so that Suppresses the condition of the residual lotion on the semiconductor wafer during the dicing process.

藉此，於切割過程中，可防止滯留之洗液向半導體晶圓之切割部位及端部之洗液滲入，故半導體晶圓與切割膠帶之黏著劑之間不會滲入洗液。 Thereby, during the dicing process, the rinsing liquid can be prevented from penetrating into the dicing portion and the end portion of the semiconductor wafer, so that the washing liquid does not penetrate between the semiconductor wafer and the adhesive of the dicing tape.

其結果，切割膠帶之黏著劑與洗液不會發生反應，故黏著劑之黏著力不會降低，由此可防止半導體晶圓自切割膠帶剝落，且可抑制自半導體晶圓切出之半導體晶片之飛出(因自切割膠帶剝落而導致之半導體晶片飛出)。 As a result, the adhesive of the dicing tape does not react with the washing liquid, so the adhesive force of the adhesive does not decrease, thereby preventing the semiconductor wafer from peeling off from the dicing tape, and suppressing the semiconductor wafer cut out from the semiconductor wafer. Flying out (the semiconductor wafer flies out due to peeling off from the cutting tape).

因此，於切割過程中，半導體晶圓上不會承受不必要之應力，可自該半導體晶圓適當地切出半導體晶片，故而半導體裝置之良率提高，其結果，實現可降低半導體裝置之成本之效果。 Therefore, during the dicing process, the semiconductor wafer is not subjected to unnecessary stress, and the semiconductor wafer can be appropriately cut out from the semiconductor wafer, so that the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device can be reduced. The effect.

本發明之切割裝置係對載置於載物台之半導體晶圓一面噴附一面進行切割者，且上述載物台之半導體晶圓之載置 面以自正交於鉛垂方向之基準水平面具有傾斜角之方式受保持，上述傾斜角設為向載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰之角度以上的狀態下，進行上述切割，藉此於切割過程中半導體晶圓上不會承受不必要之應力，而可自該半導體晶圓適當地切出半導體晶片，故而半導體裝置之良率提高，其結果，實現可降低半導體裝置之成本之效果。 The cutting device of the present invention is configured to perform dicing on one side of a semiconductor wafer placed on a stage, and the semiconductor wafer of the stage is placed. The surface is held at an inclination angle from a reference horizontal plane orthogonal to the vertical direction, and the inclination angle is set to an angle at which the state of the washing liquid sprayed onto the semiconductor wafer placed on the stage starts to collapse. In the above state, the dicing is performed, so that the semiconductor wafer is not subjected to unnecessary stress during the dicing process, and the semiconductor wafer can be appropriately cut out from the semiconductor wafer, so that the yield of the semiconductor device is improved. As a result, an effect of reducing the cost of the semiconductor device can be achieved.

[實施形態1] [Embodiment 1]

若說明本發明之一實施形態，則如以下所示。 An embodiment of the present invention will be described below.

(切割裝置之概略說明) (Summary description of the cutting device)

圖1係表示本實施形態之切割裝置1之概略構成圖。 Fig. 1 is a schematic configuration diagram of a cutting device 1 of the present embodiment.

上述切割裝置1係如圖1所示，構成為於加工區域100內配置有：經由框架13將被加工物(後述之半導體晶圓16)載置之載物台10、藉由將載置於載物台10上之被加工物旋轉切斷之切割刀片11、藉由切割刀片11對被加工物之切割部位射出洗液(以下稱為洗液)之噴嘴(洗液供給機構)12、將被加工物載置且搬送之框架13、支持切割刀片11，且將驅動力傳遞至切割刀片11之切割刀片保持部(驅動機構)14。 As shown in FIG. 1, the dicing apparatus 1 is configured such that a stage 10 on which a workpiece (a semiconductor wafer 16 to be described later) is placed via a frame 13 is placed in the processing region 100, and is placed thereon. The cutting blade 11 that is rotated and cut by the workpiece on the stage 10, and the nozzle (washing liquid supply mechanism) 12 that discharges the washing liquid (hereinafter referred to as washing liquid) to the cut portion of the workpiece by the cutting blade 11 The frame 13 on which the workpiece is placed and conveyed supports the cutting blade 11 and transmits the driving force to the cutting blade holding portion (driving mechanism) 14 of the cutting blade 11.

再者，上述加工區域100係藉由切割裝置1進行切割操作之工作區域。沿著此加工區域100，形成有支持構成切割裝置1之各構成要素之框體等之構造體。 Further, the processing region 100 is a work area in which the cutting operation is performed by the cutting device 1. A structure that supports a frame or the like that constitutes each component of the cutting device 1 is formed along the processing region 100.

上述載物台10係設置於加工區域100之切割裝置加工區域底面側1b，且以載置框架13之載置面10a相對於與鉛垂 方向正交之水平面(基準水平面A)以傾斜角θ傾斜之方式設計。此處，載物台10係至少藉由切割刀片11切割被加工物時載置面10a傾斜即可，故切割以外時，載置面10a與切割裝置加工區域底面側1b平行，即亦可與基準水平面A平行地使傾斜角θ為0°。又，關於傾斜角θ之詳細係後述。 The stage 10 is disposed on the bottom surface side 1b of the cutting device processing region of the processing region 100, and is vertically opposed to the mounting surface 10a of the mounting frame 13. The horizontal plane (reference horizontal plane A) whose directions are orthogonal is designed to be inclined at an inclination angle θ. Here, the stage 10 is inclined at least when the workpiece 10 is cut by the dicing blade 11, so that the mounting surface 10a is parallel to the bottom surface side 1b of the cutting device processing region, that is, it is possible to The reference horizontal plane A parallels the inclination angle θ to 0°. The details of the inclination angle θ will be described later.

上述切割刀片11係藉由固定於加工區域100之切割裝置加工區域頂面側1a之切割刀片保持部14支持。 The cutting blade 11 is supported by a cutting blade holding portion 14 fixed to the top surface side 1a of the cutting device processing region of the processing region 100.

上述切割刀片保持部14係藉由固定於切割裝置加工區域頂面側1a之支持樑14a支持切割刀片11。此支持樑14a中設置有相對切割刀片11而用於傳遞旋轉之驅動力之驅動源。例如，使用馬達作為驅動源，亦可將此馬達連接於切割刀片11之刀片中心軸11a，旋轉驅動該切割刀片11。 The cutting blade holding portion 14 supports the cutting blade 11 by a support beam 14a fixed to the top side 1a of the cutting device processing region. A drive source for transmitting a rotational driving force with respect to the cutting blade 11 is provided in the support beam 14a. For example, using a motor as a driving source, the motor may be coupled to the blade center shaft 11a of the cutting blade 11, and the cutting blade 11 may be rotationally driven.

又，切割刀片保持部14之支持樑14a係伸縮自如地形成，且於切割時，以切割刀片11接觸成為切斷對象之被加工物之方式延伸。 Further, the support beam 14a of the dicing blade holding portion 14 is formed to be stretchable and contractible, and is extended so that the dicing blade 11 comes into contact with the workpiece to be cut at the time of dicing.

此處，上述切割刀片11之旋轉中心即刀片中心軸11a之軸方向於切割時係以平行於載物台10之載置面10a之方式，相對於上述基準水平面而以傾斜角θ傾斜。藉此，於切割時，切割刀片11相對於載置在載物台10之被加工物而垂直地接觸。 Here, the axial direction of the blade center axis 11a, which is the rotation center of the cutting blade 11, is inclined at an inclination angle θ with respect to the reference horizontal plane so as to be parallel to the mounting surface 10a of the stage 10 at the time of cutting. Thereby, the cutting blade 11 is vertically contacted with respect to the workpiece placed on the stage 10 at the time of cutting.

上述噴嘴12設置之目的在於，切割時相對切割刀片11與被加工物所接觸之切斷部分(切割部位)射出(噴附)洗液(去離子水)。藉此，進行切割刀片11之冷卻與切削屑之去除。 The nozzle 12 is provided for the purpose of ejecting (spraying) the washing liquid (deionized water) with respect to the cutting portion (cutting portion) where the cutting blade 11 and the workpiece are in contact with each other during cutting. Thereby, the cooling of the cutting blade 11 and the removal of the chips are performed.

此處，噴嘴12之構造為，相比上述切斷部分，洗液之射出口設置於更上方，且相對該切斷部分而自上方向下方射出洗液。然而，亦可為如下構造，根據被加工物之載置面之傾斜、即上述傾斜角θ，將洗液之射出口設置於切斷部分更下方，對該切斷部分自下方向上方射出洗液。 Here, the nozzle 12 is configured such that the ejection opening of the washing liquid is provided above the cutting portion, and the washing liquid is emitted from the upper side toward the lower side with respect to the cutting portion. However, the injection opening may be provided below the cut portion depending on the inclination of the mounting surface of the workpiece, that is, the inclination angle θ, and the cut portion may be washed from the bottom to the top. liquid.

上述框架13係如圖2所示，整面設置有切割膠帶15，且該切割膠帶15上貼附有作為被加工物之半導體晶圓16。半導體晶圓16係藉由切割膠帶15之黏著劑之黏著力而黏著於框架13上，從而固定於框架13。 As shown in FIG. 2, the frame 13 is provided with a dicing tape 15 on the entire surface, and a semiconductor wafer 16 as a workpiece is attached to the dicing tape 15. The semiconductor wafer 16 is adhered to the frame 13 by the adhesive force of the adhesive of the dicing tape 15, and is fixed to the frame 13.

藉此，半導體晶圓16係經由框架13而固定載置於載物台10之載置面10a中。於該狀態下，半導體晶圓16係藉由切割刀片11而切割。 Thereby, the semiconductor wafer 16 is fixedly placed on the mounting surface 10a of the stage 10 via the frame 13. In this state, the semiconductor wafer 16 is cut by the dicing blade 11.

(切割) (cutting)

圖3係圖1所示之切割裝置1之鳥瞰圖。 Figure 3 is a bird's eye view of the cutting device 1 shown in Figure 1.

如圖3所示，自藉由載置於載物台10上之框架13之切割膠帶15而固定載置之半導體晶圓16上，一面藉由噴嘴12射出洗液，一面藉由切割刀片11切出複數個晶片。 As shown in FIG. 3, the semiconductor wafer 16 is fixedly mounted by the dicing tape 15 of the frame 13 placed on the stage 10, and the cleaning liquid is ejected by the nozzle 12, and the cutting blade 11 is used. Cut out a plurality of wafers.

圖4係半導體晶圓16之切斷部分之放大圖。 4 is an enlarged view of a cut portion of the semiconductor wafer 16.

如圖4所示，於切割過程中，載物台10之半導體晶圓16之載置面10a係自基準水平面A以傾斜角θ傾斜。此處，切割刀片11必須相對於半導體晶圓16而垂直地接觸，故該切割刀片11之刀片中心軸11a之軸方向係與上述載物台10之載置面10a平行。即，切割刀片11亦與載物台10之載置面10a同樣地，相對基準法線面B而以傾斜角θ傾斜。 As shown in FIG. 4, during the dicing process, the mounting surface 10a of the semiconductor wafer 16 of the stage 10 is inclined at an inclination angle θ from the reference horizontal plane A. Here, since the dicing blade 11 must be in vertical contact with respect to the semiconductor wafer 16, the axial direction of the blade center axis 11a of the dicing blade 11 is parallel to the mounting surface 10a of the stage 10. In other words, the cutting blade 11 is inclined at an inclination angle θ with respect to the reference normal plane B, similarly to the mounting surface 10a of the stage 10.

(關於傾斜角θ) (about tilt angle θ)

切割時，洗液係噴射至半導體晶圓16上，如圖2所示，成為切斷對象之半導體晶圓16係藉由切割膠帶15之黏著劑之黏著力而固定於框架13上，故存在洗液滲入於半導體晶圓16與切割膠帶15之黏著劑之間，洗液與黏著劑反應，導致黏著劑之黏著力減弱之風險。 At the time of dicing, the washing liquid is ejected onto the semiconductor wafer 16. As shown in Fig. 2, the semiconductor wafer 16 to be cut is fixed to the frame 13 by the adhesive force of the adhesive of the dicing tape 15, so that it exists. The lotion penetrates between the semiconductor wafer 16 and the adhesive of the dicing tape 15, and the lotion reacts with the adhesive, resulting in a risk of weakening of the adhesive.

上述黏著劑接合部分之洗液之滲入係由於切割過程中半導體晶圓16之表面中洗液過剩滯留而造成，故若可使半導體晶圓16傾斜而使過剩滯留之洗液藉由自重流落，則不會發生上述問題。使該半導體晶圓16傾斜之方法係藉由使上述載物台10之載置面10a傾斜來實現。即，藉由適當設定上述傾斜角θ，可消除洗液於半導體晶圓16上之滯留，可防止洗液滲入黏著劑接合部分，且可抑制黏著劑之黏著力減弱。 The infiltration of the lotion in the bonding portion of the adhesive is caused by excessive retention of the washing liquid on the surface of the semiconductor wafer 16 during the cutting process. Therefore, if the semiconductor wafer 16 is tilted, the excess liquid is allowed to flow by its own weight. The above problem does not occur. The method of tilting the semiconductor wafer 16 is achieved by tilting the mounting surface 10a of the stage 10. That is, by appropriately setting the inclination angle θ, the retention of the washing liquid on the semiconductor wafer 16 can be eliminated, the penetration of the washing liquid into the adhesive joining portion can be prevented, and the adhesion of the adhesive can be suppressed from being weakened.

此處，表1表示針對圖1所示之切割裝置1而調查傾斜角θ與洗液之流動情況之關係的結果。 Here, Table 1 shows the results of investigating the relationship between the inclination angle θ and the flow of the washing liquid with respect to the cutting device 1 shown in Fig. 1 .

表1係針對圖1所示之切割裝置1，於切割過程中，將自噴嘴12射出之作為洗液之去離子水，以100 ml/分之射出量噴附至半導體晶圓16之切斷部分時的結果。 Table 1 is directed to the cutting device 1 shown in Fig. 1. During the cutting process, the deionized water as the washing liquid which is emitted from the nozzle 12 is sprayed to the semiconductor wafer 16 at a discharge rate of 100 ml/min. Partial results.

因此，傾斜角θ未滿10°時不佳，洗液於半導體晶圓16上呈滯留狀態，傾斜角θ為10°時，半導體晶圓16上之洗液之滯留狀態崩潰，自半導體晶圓16上逐漸流落。 Therefore, when the inclination angle θ is less than 10°, the washing liquid is in a stagnant state on the semiconductor wafer 16, and when the inclination angle θ is 10°, the state of the washing liquid on the semiconductor wafer 16 collapses, from the semiconductor wafer. 16 gradually drifted down.

再者，即便於傾斜角θ為15°之情形時亦較佳，雖有積水但洗液緩慢流落，若傾斜角θ為20°以上，則半導體晶圓16之洗液大致完全流落。 Further, even when the inclination angle θ is 15°, the washing liquid flows slowly, and if the inclination angle θ is 20° or more, the washing liquid of the semiconductor wafer 16 is substantially completely discharged.

根據以上內容，可知若傾斜角θ為10°以上，則半導體晶圓16上之洗液之滯留狀態崩潰，洗液流出。即，若傾斜角θ為10°以上，則可防止洗液滲入黏著劑接合部分，從而可抑制黏著劑之黏著力減弱。 From the above, it is understood that when the inclination angle θ is 10° or more, the state of the washing liquid on the semiconductor wafer 16 collapses and the washing liquid flows out. In other words, when the inclination angle θ is 10° or more, it is possible to prevent the washing liquid from penetrating into the adhesive joint portion, and it is possible to suppress the adhesion of the adhesive from being weakened.

又，可知若傾斜角θ為20°以上，則半導體晶圓16之洗液大致完全流落，故而更有效。 Further, it is understood that when the inclination angle θ is 20° or more, the washing liquid of the semiconductor wafer 16 is substantially completely discharged, which is more effective.

如此，傾斜角θ越大則防止洗液滲入黏著劑接合部分之效果越高，但若傾斜角θ超過90°，則必須大幅變更切割裝置1之載物台、切割刀片11、噴嘴12之配設位置。關於傾斜角θ為90°之情形係於後述之實施形態2中詳細說明。又，於傾斜角θ為180°之情形，必須進而變更切割裝置1之構造。關於該傾斜角θ為180°之情形係於後述之實施形態3、4中詳細說明。 As described above, the larger the inclination angle θ, the higher the effect of preventing the penetration of the washing liquid into the adhesive joining portion. However, if the inclination angle θ exceeds 90°, the loading of the stage, the cutting blade 11, and the nozzle 12 of the cutting device 1 must be greatly changed. Set the location. The case where the inclination angle θ is 90° will be described in detail in the second embodiment to be described later. Further, in the case where the inclination angle θ is 180°, it is necessary to further change the structure of the cutting device 1. The case where the inclination angle θ is 180° will be described in detail in Embodiments 3 and 4 which will be described later.

(洗液之黏性對傾斜角θ之影響) (The influence of the viscosity of the washing liquid on the inclination angle θ)

於使用去離子水作為洗液之情形，洗液之黏性對於傾斜角θ幾乎無影響。即，切割裝置1通常係設置於經溫濕管理之無塵室內，故溫度變化小，洗液之黏性不易有較大變化，故洗液之黏性難以對傾斜角造成影響。即便假設洗液 之黏性因溫度變化而嚴格而言變高，亦處於誤差之範圍內，難以對傾斜角θ造成影響。 In the case where deionized water is used as the washing liquid, the viscosity of the washing liquid has almost no influence on the inclination angle θ. That is, the cutting device 1 is usually installed in a clean room controlled by temperature and humidity, so that the temperature change is small, and the viscosity of the washing liquid is not easily changed greatly, so that the viscosity of the washing liquid is difficult to affect the inclination angle. Even assuming lotion The viscosity is strictly higher due to temperature changes, and is also within the range of error, and it is difficult to affect the inclination angle θ.

(洗液之射出量(=射出速度)對傾斜角θ之影響) (The influence of the injection amount of the washing liquid (= ejection speed) on the inclination angle θ)

洗液之射出量對傾斜角θ之影響亦與上述黏性同樣地幾乎不予以考慮。表2中表示洗液之射出量與最小傾斜角之關於。 The influence of the amount of the washing liquid on the inclination angle θ is hardly considered similarly to the above-described viscosity. Table 2 shows the relationship between the amount of injection liquid and the minimum inclination angle.

表2中，示出有於No.1之試驗條件下射出量為100 ml/分時之最小傾斜角為10°，於No.2之試驗條件下射出量為300 ml/分時之最小傾斜角為8°。此處，所謂最小傾斜角係設為洗液未滯留於半導體晶圓16之表面之最小傾斜角θ。 In Table 2, the minimum inclination angle when the injection amount is 100 ml/min under the test condition of No. 1 is 10°, and the minimum inclination when the injection amount is 300 ml/min under the test condition of No. 2 is shown. The angle is 8°. Here, the minimum tilt angle is a minimum tilt angle θ at which the washing liquid does not stay on the surface of the semiconductor wafer 16.

若對表2之資訊進行補充，則將洗液之射出量為每分鐘300 ml以上且傾斜角θ為8°之情形，與洗液之射出量為每分鐘100 ml且傾斜角θ為10°之情形相比，洗液向半導體晶圓16之表面整體擴大之情形較大，但洗液向重力方向之流動方面並無較大差別。 If the information in Table 2 is supplemented, the injection amount of the washing liquid is 300 ml or more per minute and the inclination angle θ is 8°, and the injection amount with the washing liquid is 100 ml per minute and the inclination angle θ is 10°. In contrast, the case where the washing liquid is enlarged toward the entire surface of the semiconductor wafer 16 is large, but there is no significant difference in the flow of the washing liquid in the direction of gravity.

可知洗液之射出量為每分300 ml以上時，若傾斜角θ為至少8°以上，則洗液不滯留於半導體晶圓16之表面，而是藉由洗液之自重，朝重力方向自然流動，於洗液之射出量為每分100 ml時，若傾斜角θ為至少10°以上，則洗液不滯留於半導體晶圓16之表面，而是藉由洗液之自重朝重力方 向自然流動，故即便改變洗液之射出量，用於使洗液利用自重而朝重力方向自然流落之傾斜角θ之大小亦大致無變化。 When the injection amount of the washing liquid is 300 ml or more per minute, if the inclination angle θ is at least 8° or more, the washing liquid does not stay on the surface of the semiconductor wafer 16, but is naturally moved toward the gravity by the weight of the washing liquid. Flow, when the injection amount of the washing liquid is 100 ml per minute, if the inclination angle θ is at least 10° or more, the washing liquid does not stay on the surface of the semiconductor wafer 16, but is gravity-oriented by the self-weight of the washing liquid. Since it flows naturally, even if the amount of the washing liquid is changed, the inclination angle θ for causing the washing liquid to naturally flow toward the gravity direction by its own weight does not substantially change.

因此，洗液之射出量對傾斜角θ之影響亦與上述洗液之黏性之情形同樣地大致無影響。 Therefore, the influence of the amount of the washing liquid on the inclination angle θ is substantially the same as that in the case of the viscosity of the above-mentioned washing liquid.

再者，洗液之射出量為100 ml/分即No.1之試驗條件係通常實施無法獲得之最低水平之射出量，故傾斜角θ之下限值設為10°較為妥當。 In addition, the test condition of the washing liquid is 100 ml/min, that is, the test condition of No. 1 is usually the lowest level of the unobtainable emission, so the lower limit of the inclination angle θ is set to 10°.

但洗液為去離子水之情形時，可說傾斜角θ之下限值係10°，而去離子水以外之洗液之情形時，上述傾斜角θ之下限值並非限定於10°，例如將半導體晶圓上之洗液之滯留狀態開始崩潰之傾斜角設為傾斜角θ之下限值即可。 However, when the washing liquid is deionized water, the lower limit of the inclination angle θ is 10°, and in the case of the washing liquid other than the deionized water, the lower limit of the inclination angle θ is not limited to 10°. For example, the inclination angle at which the retention state of the washing liquid on the semiconductor wafer starts to collapse may be set to a lower limit value of the inclination angle θ.

(藉由實施形態1之效果) (by the effect of the first embodiment)

根據上述構成之切割裝置1，邊自噴嘴12射出洗液邊進行切割時，載物台10之載置面10a之傾斜角θ相比半導體晶圓16之洗液之滯留狀態開始崩潰之傾斜角設定更大，故半導體晶圓16上未滯留洗液。 According to the dicing apparatus 1 of the above configuration, when the rinsing is performed while the washing liquid is ejected from the nozzle 12, the inclination angle θ of the mounting surface 10a of the stage 10 is lower than the sag angle of the washing liquid of the semiconductor wafer 16 Since the setting is larger, the washing liquid is not retained on the semiconductor wafer 16.

藉此，可防止洗液自半導體晶圓16之切割部位及端部，滲入半導體晶圓16與切割膠帶15之黏著劑之間，故切割膠帶15之黏著劑與洗液發生反應且可消除因黏著劑之黏著力降低所引發之自半導體晶圓16之切割膠帶15之剝落現象，且可抑制自半導體晶圓16切出之半導體晶片之飛出(因自切割膠帶15剝落致半導體晶片之飛出)。 Thereby, the cleaning liquid can be prevented from infiltrating between the semiconductor wafer 16 and the adhesive of the dicing tape 15 from the dicing portion and the end portion of the semiconductor wafer 16, so that the adhesive of the dicing tape 15 reacts with the washing liquid and can eliminate the cause The adhesion of the adhesive is reduced by the peeling of the dicing tape 15 from the semiconductor wafer 16, and the flying of the semiconductor wafer cut out from the semiconductor wafer 16 can be suppressed (the flying of the semiconductor wafer due to the peeling of the self-cutting tape 15) Out).

因此，對於半導體晶圓16未給予應力，且不增加加工時 之步驟，可有效進行切割，故自半導體晶圓16切出之半導體晶片之良率提高，實現可降低半導體裝置之製造成本之效果。 Therefore, no stress is applied to the semiconductor wafer 16 without increasing the processing time. In this step, the dicing can be performed efficiently, so that the yield of the semiconductor wafer cut out from the semiconductor wafer 16 is improved, and the effect of reducing the manufacturing cost of the semiconductor device can be achieved.

[實施形態2] [Embodiment 2]

若對本發明之其他實施形態進行說明，則如以下所示。 Other embodiments of the present invention will be described below.

(切割裝置之概略說明) (Summary description of the cutting device)

圖5係表示本實施形態之切割裝置2之概略構成圖。 Fig. 5 is a schematic block diagram showing the cutting device 2 of the embodiment.

上述切割裝置2係如圖5所示，構成為於加工區域200內配置有：經由框架23載置被加工物(後述之半導體晶圓26)之載物台20；藉由旋轉切斷載置於載物台20上之被加工物之切割刀片21；對藉由切割刀片21而經切割之被加工物之切割部位射出洗液(以下稱為洗液)之噴嘴(洗液供給機構)22；用於載置並搬送被加工物之框架23；及支持切割刀片21並向切割刀片21傳遞驅動力之切割刀片保持部(驅動機構)24。 As shown in FIG. 5, the cutting device 2 is configured such that a stage 20 on which a workpiece (a semiconductor wafer 26 to be described later) is placed via a frame 23 is disposed in the processing region 200, and is placed by rotation. a cutting blade 21 for a workpiece on the stage 20; a nozzle (washing liquid supply mechanism) 22 for discharging a washing liquid (hereinafter referred to as a washing liquid) to a cutting portion of the workpiece to be cut by the cutting blade 21. a frame 23 for placing and conveying the workpiece; and a cutting blade holding portion (driving mechanism) 24 that supports the cutting blade 21 and transmits a driving force to the cutting blade 21.

再者，上述加工區域200係用於利用切割裝置2進行切割操作之工作區域。沿著該加工區域200形成有用以支持構成切割裝置2之各構成要素之框體等之構造體。 Further, the processing region 200 is used for a work area in which the cutting operation is performed by the cutting device 2. A structure for supporting a frame or the like constituting each component of the cutting device 2 is formed along the processing region 200.

上述載物台20係設置於加工區域200之切割裝置加工區域左側面側2b中，且載置框架23之載置面20a係以相對於與鉛垂方向正交之水平面(基準水平面A)傾斜且傾斜角θ=90°之方式設計。 The stage 20 is disposed in the left side surface 2b of the cutting device processing region of the processing region 200, and the mounting surface 20a of the mounting frame 23 is inclined with respect to a horizontal plane (reference horizontal plane A) orthogonal to the vertical direction. And the inclination angle θ=90° is designed.

上述切割刀片21係藉由切割刀片保持部24予以支持，該切割刀片保持部24係固定於加工區域200中之切割裝置加 工區域右側面側2a。 The cutting blade 21 is supported by a cutting blade holding portion 24 that is fixed to the cutting device in the processing region 200. The right side of the work area is 2a.

上述切割刀片保持部24係藉由固定於切割裝置加工區域右側面側2a之支持樑24a而支持切割刀片21。該支持樑24a中設置有用於對切割刀片21傳遞旋轉驅動力之驅動源。例如，亦可使用馬達作為驅動源，將該馬達連結於切割刀片21之刀片中心軸21a，而使該切割刀片21旋轉驅動。 The cutting blade holding portion 24 supports the cutting blade 21 by a support beam 24a fixed to the right side surface 2a of the cutting device processing region. A drive source for transmitting a rotational driving force to the cutting blade 21 is provided in the support beam 24a. For example, a motor may be used as a driving source, and the motor may be coupled to the blade center shaft 21a of the cutting blade 21 to rotationally drive the cutting blade 21.

又，切割刀片保持部24之支持樑24a係伸縮自如地形成，且於切割時以使切割刀片21接觸成為切斷對象之被加工物之方式延伸。 Further, the support beam 24a of the dicing blade holding portion 24 is formed to be expandable and contractible, and is extended so as to bring the dicing blade 21 into contact with the workpiece to be cut.

此處，上述切割刀片21之旋轉中心即刀片中心軸21a之軸方向於切割時係以與載物台20之載置面20a平行之方式，相對於上述基準水平面以傾斜角θ=90°傾斜。藉此，切割時切割刀片21相對於載置於載物台20上之被加工物而垂直地接觸。 Here, the rotation center of the cutting blade 21, that is, the axial direction of the blade center axis 21a is inclined at an inclination angle θ=90° with respect to the reference horizontal plane so as to be parallel to the mounting surface 20a of the stage 20 at the time of cutting. . Thereby, the cutting blade 21 is vertically contacted with respect to the workpiece placed on the stage 20 at the time of cutting.

上述噴嘴22係於切割時用以向切割刀片21與被加工物接觸之切斷部分(切割部位)射出洗液(去離子水)而設置。藉此，進行切割刀片21之冷卻與切削屑之去除。 The nozzle 22 is provided to eject a washing liquid (deionized water) at a cutting portion (cutting portion) that comes into contact with the workpiece by the cutting blade 21 at the time of cutting. Thereby, the cooling of the cutting blade 21 and the removal of the chips are performed.

此處，噴嘴22之構造為，其洗液之射出口設置於較上述切斷部分更上方，且對於該切斷部分自上方朝下方射出洗液。 Here, the nozzle 22 is configured such that the discharge port of the washing liquid is disposed above the cut portion, and the washing liquid is sprayed downward from the upper side toward the cut portion.

上述框架23係與上述實施形態1同樣地，於整個面設有切割膠帶25，且於該切割膠帶25上貼附有被加工物即半導體晶圓26。半導體晶圓26係藉由切割膠帶25之黏著劑之黏著力而黏著於框架23，最後固定於框架23上。 In the same manner as in the above-described first embodiment, the frame 23 is provided with a dicing tape 25 on the entire surface thereof, and a semiconductor wafer 26 as a workpiece is attached to the dicing tape 25. The semiconductor wafer 26 is adhered to the frame 23 by the adhesive force of the adhesive of the dicing tape 25, and finally fixed to the frame 23.

藉此，半導體晶圓26經由框架23而被固定載置於載物台20之載置面20a。於該狀態下，半導體晶圓26藉由切割刀片21予以切割。 Thereby, the semiconductor wafer 26 is fixedly placed on the mounting surface 20a of the stage 20 via the frame 23. In this state, the semiconductor wafer 26 is cut by the dicing blade 21.

(切割) (cutting)

圖6係圖5所示之切割裝置2之鳥瞰圖。 Figure 6 is a bird's eye view of the cutting device 2 shown in Figure 5.

如圖6所示，自藉由載置於載物台20上之框架23之切割膠帶25而黏著之半導體晶圓26，一面藉由噴嘴22射出洗液，一面藉由切割刀片21切出複數個晶片。 As shown in FIG. 6, the semiconductor wafer 26 adhered by the dicing tape 25 of the frame 23 placed on the stage 20 is ejected by the nozzle 22 while being cut out by the dicing blade 21. Wafers.

圖7係半導體晶圓26之切斷部分之放大圖。 FIG. 7 is an enlarged view of a cut portion of the semiconductor wafer 26.

如圖7所示，於切割過程中，載物台20之半導體晶圓26之載置面20a係自基準水平面A以傾斜角θ=90°傾斜。即，載物台20之半導體晶圓26之載置面20a與基準法線面B平行。此處，由於切割刀片21必須相對於半導體晶圓26垂直地接觸，故該切割刀片21之刀片中心軸21a之軸方向係與上述載物台20之載置面20a平行。即，切割刀片21亦與載物台20之載置面20a同樣地，相對於基準水平面而以傾斜角θ=90°傾斜。即，切割刀片21亦與基準法線面B平行。 As shown in FIG. 7, during the dicing process, the mounting surface 20a of the semiconductor wafer 26 of the stage 20 is inclined at an inclination angle θ=90° from the reference horizontal plane A. That is, the mounting surface 20a of the semiconductor wafer 26 of the stage 20 is parallel to the reference normal plane B. Here, since the dicing blade 21 must be in vertical contact with the semiconductor wafer 26, the axial direction of the blade center axis 21a of the dicing blade 21 is parallel to the mounting surface 20a of the stage 20. In other words, the cutting blade 21 is inclined at an inclination angle θ=90° with respect to the reference horizontal plane, similarly to the mounting surface 20a of the stage 20. That is, the cutting blade 21 is also parallel to the reference normal plane B.

(藉由實施形態2之效果) (by the effect of Embodiment 2)

本實施形態之切割裝置2亦實現與上述實施形態1之切割裝置1之效果相同之效果。 The cutting device 2 of the present embodiment also achieves the same effects as those of the cutting device 1 of the first embodiment.

進而，本實施形態之切割裝置2中，邊自噴嘴22射出洗液邊進行切割時，載物台20之載置面20a之傾斜角θ係設定為90°，故洗液之自重落下方向與重力方向一致，進而，因半導體晶圓26上之表面張力所致之滯留較少，故洗液最 為有效地流落。 Further, in the dicing apparatus 2 of the present embodiment, when the rinsing is performed while the washing liquid is ejected from the nozzle 22, the inclination angle θ of the mounting surface 20a of the stage 20 is set to 90°, so that the self-weight of the washing liquid falls and The direction of gravity is uniform, and further, the retention due to the surface tension on the semiconductor wafer 26 is less, so the lotion is the most For effective flow.

藉此，可防止洗液自半導體晶圓26之切割部位及端部，滲入半導體晶圓26與切割膠帶25之黏著劑之間，故可切實消除切割膠帶25之黏著劑與洗液發生反應導致黏著劑之黏著力下降而引發的半導體晶圓26自切割膠帶25之剝落，且可抑制自半導體晶圓26切出之半導體晶片之飛出(因自切割膠帶25剝落導致半導體晶片之飛出)。 Thereby, the cleaning liquid can be prevented from infiltrating between the semiconductor wafer 26 and the adhesive of the dicing tape 25 from the dicing portion and the end portion of the semiconductor wafer 26, so that the adhesive of the dicing tape 25 and the washing liquid can be reliably eliminated. The peeling of the semiconductor wafer 26 from the dicing tape 25 caused by the decrease in the adhesive force of the adhesive can suppress the flying out of the semiconductor wafer cut out from the semiconductor wafer 26 (the semiconductor wafer flies due to peeling off from the dicing tape 25) .

因此，對於半導體晶圓26未給予應力，且不增加加工時之步驟，可有效進行切割，故自半導體晶圓26切出之半導體晶片之良率提高，實現可降低半導體裝置之製造成本之效果。 Therefore, the semiconductor wafer 26 is not stressed, and the step of processing is not increased, so that the dicing can be performed efficiently, so that the yield of the semiconductor wafer cut out from the semiconductor wafer 26 is improved, and the manufacturing cost of the semiconductor device can be reduced. .

再者，本實施形態中，對傾斜角θ=90°之情形進行了說明，但圖5所示之切割裝置2中，載物台20係設置於與基準法線面B平行之切割裝置加工區域左側面側2b，故即便載物台20之載置面20a之傾斜角θ自90°偏離而為80°或100°，雖非傾斜角θ為90°之情形，但洗液之自重落下方向與重力方向大致一致，進而半導體晶圓26上之表面張力所致的滯留較少，故而洗液有效流落。 Further, in the present embodiment, the case where the inclination angle θ = 90° has been described. However, in the cutting device 2 shown in Fig. 5, the stage 20 is disposed in a cutting device which is parallel to the reference normal plane B. Since the left side surface side 2b of the region 20 is 80° or 100° from the inclination angle θ of the mounting surface 20a of the stage 20, although the non-tilting angle θ is 90°, the self-weight of the washing liquid falls. The direction is substantially the same as the direction of gravity, and the retention due to the surface tension on the semiconductor wafer 26 is small, so that the washing liquid effectively flows.

然而，若傾斜角θ大於90°且進一步大於上述100°，則僅以切割裝置2之對策(載物台20之載置面20a之傾斜之對策)並不充分，如後述之實施形態3所揭示般，必須將載物台設置於頂面側。 However, if the inclination angle θ is larger than 90° and further larger than the above-described 100°, only the countermeasure of the cutting device 2 (the countermeasure against the inclination of the mounting surface 20a of the stage 20) is insufficient, as in the third embodiment to be described later. As revealed, the stage must be placed on the top side.

[實施形態3] [Embodiment 3]

若對本發明之其他實施形態進行說明，則如以下所示。 Other embodiments of the present invention will be described below.

(切割裝置之概略說明) (Summary description of the cutting device)

圖8係表示本實施形態之切割裝置3之概略構成之圖。 Fig. 8 is a view showing a schematic configuration of a cutting device 3 of the present embodiment.

上述切割裝置3係如圖8所示，構成為於加工區域300內配置有：經由框架33載置被加工物(後述之半導體晶圓36)之載物台30；藉由旋轉切斷載置於載物台30上之被加工物之切割刀片31；向藉由切割刀片31而經切割之被加工物之切割部位射出洗液(以下稱為洗液)之噴嘴32；用於載置並搬送被加工物之框架33；及支持切割刀片31並向切割刀片31傳遞驅動力之切割刀片保持部(驅動機構)34。 As shown in FIG. 8, the dicing apparatus 3 is configured such that a stage 30 on which a workpiece (a semiconductor wafer 36 to be described later) is placed via a frame 33 is disposed in the processing region 300; a cutting blade 31 for a workpiece on the stage 30; a nozzle 32 for discharging a washing liquid (hereinafter referred to as a washing liquid) to a cutting portion of the workpiece to be cut by the cutting blade 31; A frame 33 for conveying a workpiece; and a cutting blade holding portion (driving mechanism) 34 that supports the cutting blade 31 and transmits a driving force to the cutting blade 31.

再者，上述加工區域300係用於藉由切割裝置3進行切割操作之工作區域。沿著該加工區域300而形成有用以支持構成切割裝置3之各構成要素之框體等之構造體。 Furthermore, the processing region 300 described above is used for a working area in which the cutting operation is performed by the cutting device 3. A structure for supporting a frame or the like constituting each component of the cutting device 3 is formed along the processing region 300.

此處，上述構成之上述切割裝置3係與上述實施形態1之圖1所示之切割裝置1呈上下相反之構造。即，上述載物台30係設置於加工區域300之切割裝置加工區域頂面側3a，且載置框架33之載置面30a係以與正交於鉛垂方向之水平面(基準水平面A)平行，即傾斜角θ=180°之方式設計。 Here, the cutting device 3 having the above configuration is configured to be vertically opposite to the cutting device 1 shown in Fig. 1 of the first embodiment. That is, the stage 30 is provided on the top surface side 3a of the cutting device processing region of the processing region 300, and the mounting surface 30a of the mounting frame 33 is parallel to the horizontal plane (reference horizontal plane A) orthogonal to the vertical direction. , that is, the inclination angle θ=180° is designed.

上述切割刀片31係藉由切割刀片保持部34支持，該切割刀片保持部34係固定於加工區域300之切割裝置加工區域底面側3b。 The cutting blade 31 is supported by a dicing blade holding portion 34 that is fixed to the cutting device processing region bottom surface side 3b of the processing region 300.

上述切割刀片保持部34係藉由固定於切割裝置加工區域底面側3b之支持樑34a而支持切割刀片31。該支持樑34a中，設有對切割刀片31傳遞旋轉驅動力之驅動源。例如，亦可使用馬達作為驅動源，將該馬達連接於切割刀片31之 刀片中心軸31a，且旋轉驅動該切割刀片31。 The cutting blade holding portion 34 supports the cutting blade 31 by a support beam 34a fixed to the bottom surface side 3b of the cutting device processing region. The support beam 34a is provided with a drive source that transmits a rotational driving force to the cutting blade 31. For example, a motor may be used as a driving source, and the motor is connected to the cutting blade 31. The blade center shaft 31a rotates and drives the cutting blade 31.

又，切割刀片保持部34之支持樑34a係伸縮自如地形成，且於切割時係以切割刀片31接觸成為切割對象之被加工物之方式延伸。 Further, the support beam 34a of the dicing blade holding portion 34 is formed to be expandable and contractible, and is extended so as to be in contact with the workpiece to be cut by the dicing blade 31 at the time of cutting.

此處，上述切割刀片31之旋轉中心即刀片中心軸31a之軸方向於切割時係以與載物台30之載置面30a平行之方式，變得與上述基準水平面A平行。藉此，切割時切割刀片31相對於載置於載物台30之被加工物而垂直地接觸。 Here, the axial direction of the blade center axis 31a, which is the center of rotation of the dicing blade 31, is parallel to the reference horizontal plane A so as to be parallel to the mounting surface 30a of the stage 30 at the time of cutting. Thereby, the cutting blade 31 is vertically contacted with respect to the workpiece placed on the stage 30 at the time of cutting.

上述噴嘴32之設置目的在於，切割時對切割刀片31與被加工物所接觸之切斷部分(切割部位)射出洗液(去離子水)。藉此，進行切割刀片31之冷卻與切削屑之去除。 The nozzle 32 is provided for emitting a washing liquid (deionized water) to a cutting portion (cutting portion) where the cutting blade 31 and the workpiece are in contact at the time of cutting. Thereby, the cooling of the cutting blade 31 and the removal of the chips are performed.

此處，噴嘴32之構造為，洗液之射出口設置於較上述切斷部分更下方，且對該切斷部分自下方朝上方射出洗液。 Here, the nozzle 32 is configured such that the ejection opening of the washing liquid is disposed below the cut portion, and the washing portion is sprayed upward from the lower portion.

上述框架33係與上述實施形體1同樣地，整個面設置有切割膠帶35，且於該切割膠帶35上貼附有被加工物即半導體晶圓36。半導體晶圓36係藉由切割膠帶35之黏著劑而黏著於框架33上，結果，固定於框架33上。 Similarly to the above-described embodiment 1, the frame 33 is provided with a dicing tape 35 on the entire surface thereof, and a semiconductor wafer 36 as a workpiece is attached to the dicing tape 35. The semiconductor wafer 36 is adhered to the frame 33 by the adhesive of the dicing tape 35, and as a result, is fixed to the frame 33.

藉此，半導體晶圓36係經由框架33而固定載置於載物台30之載置面30a上。於該狀態下，半導體晶圓36藉由切割刀片31而被切割。 Thereby, the semiconductor wafer 36 is fixedly placed on the mounting surface 30a of the stage 30 via the frame 33. In this state, the semiconductor wafer 36 is cut by the dicing blade 31.

(切割) (cutting)

圖9係圖8所示之切割裝置3之鳥瞰圖。 Figure 9 is a bird's eye view of the cutting device 3 shown in Figure 8.

如圖9所示，自藉由載置於載物台30上之框架33之切割膠帶35黏著之半導體晶圓36上，邊藉由噴嘴32射出洗液， 邊藉由切割刀片31切出複數個晶片。 As shown in FIG. 9, the washing liquid is ejected by the nozzle 32 from the semiconductor wafer 36 adhered by the dicing tape 35 of the frame 33 placed on the stage 30. A plurality of wafers are cut out by the cutting blade 31.

圖10係半導體晶圓36之切斷部分之放大圖。 FIG. 10 is an enlarged view of a cut portion of the semiconductor wafer 36.

如圖10所示，於切割過程中，載物台30之半導體晶圓36之載置面30a係與基準水平面A平行，且設為朝向下方。此處，切割刀片31必須相對於半導體晶圓36而自下方垂直地接觸，故該切割刀片31之刀片中心軸31a之軸方向係與上述載物台30之載置面30a平行。 As shown in FIG. 10, during the dicing process, the mounting surface 30a of the semiconductor wafer 36 of the stage 30 is parallel to the reference horizontal plane A and is oriented downward. Here, since the dicing blade 31 must be vertically contacted from the lower side with respect to the semiconductor wafer 36, the axial direction of the blade center axis 31a of the dicing blade 31 is parallel to the mounting surface 30a of the stage 30.

如圖10所示，將切割刀片31自下方相對於半導體晶圓36抵接，且自下方朝向上方地自噴嘴32射出洗液，故接觸半導體晶圓36之洗液藉由自重及重力而立即落下。 As shown in FIG. 10, the dicing blade 31 abuts against the semiconductor wafer 36 from below, and the washing liquid is ejected from the nozzle 32 from the bottom upward, so that the washing liquid contacting the semiconductor wafer 36 is immediately by its own weight and gravity. fall.

(藉由實施形態3之效果) (by the effect of Embodiment 3)

本實施形態之切割裝置3中亦實現與上述實施形態2之切割裝置2之效果相同之效果。 The cutting device 3 of the present embodiment also achieves the same effects as those of the cutting device 2 of the second embodiment.

進而，本實施形態之切割裝置3中，邊自噴嘴32射出洗液邊進行切割時，載物台30之載置面30a之傾斜角θ係設定為180°，故洗液之自重落下方向與重力方向一致，洗液有效流落。 Further, in the dicing apparatus 3 of the present embodiment, when the rinsing is performed while the washing liquid is ejected from the nozzle 32, the inclination angle θ of the mounting surface 30a of the stage 30 is set to 180°, so that the self-weight of the washing liquid falls and The direction of gravity is the same, and the lotion is effectively flowing.

藉此，可防止洗液自半導體晶圓36之切割部位及端部滲入半導體晶圓36與切割膠帶35之黏著劑之間，故可切實消除切割膠帶35之黏著劑與洗液發生反應導致黏著劑之黏著力下降而引發的半導體晶圓36自切割膠帶35之剝落，且可抑制自半導體晶圓36切出之半導體晶片之飛出(因自切割膠帶35剝落導致半導體晶片之飛出)。 Thereby, the cleaning liquid can be prevented from infiltrating between the semiconductor wafer 36 and the adhesive of the dicing tape 35 from the dicing portion and the end portion of the semiconductor wafer 36, so that the adhesive of the dicing tape 35 and the washing liquid can be reliably eliminated to cause adhesion. The peeling of the semiconductor wafer 36 from the dicing tape 35 caused by the decrease in the adhesive force of the agent can suppress the flying out of the semiconductor wafer cut out from the semiconductor wafer 36 (the semiconductor wafer is ejected due to peeling off from the dicing tape 35).

因此，對於半導體晶圓36未給予應力，且不增加加工時 之步驟，可有效地進行切割，故實現提高自半導體晶圓36切出之半導體晶片之良率，且可提供廉價半導體晶片之效果。 Therefore, no stress is applied to the semiconductor wafer 36 without increasing the processing time. In this step, the dicing can be performed efficiently, so that the yield of the semiconductor wafer cut out from the semiconductor wafer 36 can be improved, and the effect of the inexpensive semiconductor wafer can be provided.

又，本實施形態之切割裝置3可藉由針對先前存在之切割裝置、即切割刀片設置於切割裝置加工區域頂面側，且載物台設置於切割裝置加工區域底面側之切割裝置，僅使切割刀片與載物台之配置位置相反而簡單地實現。 Further, the cutting device 3 of the present embodiment can be provided only by the cutting device provided on the top surface side of the cutting device processing region for the previously existing cutting device, that is, the cutting blade, and the stage is disposed on the bottom surface side of the cutting device processing region, The cutting blade is simply implemented opposite to the configuration of the stage.

[實施形態4] [Embodiment 4]

若對本發明之其他實施形態進行說明，則如以下所示。 Other embodiments of the present invention will be described below.

(切割裝置之概略說明) (Summary description of the cutting device)

圖11係表示本實施形態之切割裝置4之概略構成圖。 Fig. 11 is a view showing a schematic configuration of a cutting device 4 of the present embodiment.

上述切割裝置4係基本上與上述實施形態3之切割裝置3構成相同。即，切割裝置4係如圖11所示，構成為於加工區域400內配置有：載物台40；藉由旋轉切割載置於載物台40上之被加工物之切割刀片41；向藉由切割刀片41而經切割之被加工物之切割部位射出洗液(以下稱為洗液)之噴嘴(洗液供給機構)42；用於載置並搬送被加工物之框架43；及支持切割刀片41並向切割刀片41傳遞驅動力之切割刀片保持部(驅動機構)44。 The cutting device 4 is basically the same as the cutting device 3 of the above-described third embodiment. That is, as shown in FIG. 11, the cutting device 4 is configured such that the stage 40 is disposed in the processing region 400, and the cutting blade 41 of the workpiece placed on the stage 40 is rotated and cut; a nozzle (washing liquid supply mechanism) 42 for discharging a washing liquid (hereinafter referred to as a washing liquid) by a cutting portion of the workpiece to be cut by the cutting blade 41; a frame 43 for placing and conveying the workpiece; and supporting cutting The blade 41 transmits a driving blade holding mechanism (driving mechanism) 44 to the cutting blade 41.

再者，上述加工區域400係用於藉由切割裝置4進行切割操作之工作區域。沿著該加工區域400，形成有用於支持構成切割裝置4之各構成要素之框體等之構造體。 Furthermore, the processing region 400 described above is used for a working area in which the cutting operation is performed by the cutting device 4. A structure for supporting a frame or the like constituting each component of the cutting device 4 is formed along the processing region 400.

此處，上述構成之上述切割裝置4係與上述實施形態3之圖8所示之切割裝置3大致相同之構造。即，上述載物台40 係設置於加工區域400之切割裝置加工區域頂面側4a中，且載置框架43之載置面40a係以與正交於鉛垂方向之水平面(基準水平面A)平行、即傾斜角θ=180°之方式設計。 Here, the cutting device 4 having the above configuration is substantially the same as the cutting device 3 shown in Fig. 8 of the third embodiment. That is, the above stage 40 It is disposed in the top surface side 4a of the cutting device processing region of the processing region 400, and the mounting surface 40a of the mounting frame 43 is parallel to the horizontal plane (reference horizontal plane A) orthogonal to the vertical direction, that is, the inclination angle θ= Designed in 180° mode.

然而，切割刀片41之配設位置與上述實施形態3相異，且藉由固定於加工區域400之切割裝置加工區域側面側4b之切割刀片保持部44支持。 However, the arrangement position of the cutting blade 41 is different from that of the above-described third embodiment, and is supported by the cutting blade holding portion 44 fixed to the side surface side 4b of the cutting device processing region of the processing region 400.

上述切割刀片保持部44係藉由固定於切割裝置加工區域側面側4b之支持樑44a支持切割裝置41。該支持樑44a中設置有用於對於切割刀片41傳遞旋轉驅動力之驅動源。例如，亦可使用馬達作為驅動源，將該馬達連接於切割刀片41之刀片中心軸41a，且旋轉驅動該切割刀片41。 The cutting blade holding portion 44 supports the cutting device 41 by a support beam 44a fixed to the side surface side 4b of the cutting device processing region. A drive source for transmitting a rotational driving force to the cutting blade 41 is provided in the support beam 44a. For example, a motor may be used as a driving source, the motor is coupled to the blade center shaft 41a of the cutting blade 41, and the cutting blade 41 is rotationally driven.

又，切割刀片保持部44係針對每個支持樑44a而可移動地設於切割裝置加工區域頂面側4a側。藉此，切割時切割刀片41接觸成為切割對象之被加工物。 Further, the dicing blade holding portion 44 is movably provided on the side of the top surface side 4a of the cutting device processing region for each of the support beams 44a. Thereby, the cutting blade 41 comes into contact with the workpiece to be cut when cutting.

上述噴嘴42之設置目的在於，於切割時對切割刀片41與被加工物所接觸之切斷部分(切割部位)射出洗液(去離子水)。藉此，進行切割刀片41之冷卻與切削屑之去除。 The nozzle 42 is provided to emit a washing liquid (deionized water) at a cutting portion (cutting portion) where the cutting blade 41 and the workpiece are in contact at the time of cutting. Thereby, the cooling of the cutting blade 41 and the removal of the chips are performed.

上述框架43係與上述實施形態3同樣地，整個面設有切割膠帶45，且該切割膠帶45上貼附有被加工物即半導體晶圓。半導體晶圓係藉由切割膠帶45之黏著劑而黏著於框架43，結果，固定於框架43上。 Similarly to the above-described third embodiment, the frame 43 is provided with a dicing tape 45 on the entire surface thereof, and a semiconductor wafer to be processed is attached to the dicing tape 45. The semiconductor wafer is adhered to the frame 43 by the adhesive of the dicing tape 45, and as a result, is fixed to the frame 43.

藉此，半導體晶圓經由框架43而固定載置於載物台40之載置面40a中。於該狀態下，半導體晶圓藉由切割刀片41而被切割。 Thereby, the semiconductor wafer is fixedly placed on the mounting surface 40a of the stage 40 via the frame 43. In this state, the semiconductor wafer is cut by the dicing blade 41.

(藉由實施形態4之效果) (by the effect of Embodiment 4)

根據本實施形態之切割裝置4，可獲得與上述實施形態3之切割裝置3之效果大致相同之效果。 According to the cutting device 4 of the present embodiment, substantially the same effects as those of the cutting device 3 of the above-described third embodiment can be obtained.

而且，藉由將切割保持部44設置於載物台40之切割裝置加工區域側面側4b中，而不存在於朝載物台40之載置面40a射出之洗液的自重落下位置。因此，無需對切割刀片保持部44施加不必要之洗液，故而實現可減少因對該切割刀片保持部44施加洗液而引發的切割刀片保持部44之機構之劣化或故障之效果。 Further, the cutting holding portion 44 is provided on the side surface side 4b of the cutting device processing region of the stage 40, and does not exist in the dead weight dropping position of the washing liquid that is emitted toward the mounting surface 40a of the stage 40. Therefore, it is not necessary to apply unnecessary washing liquid to the cutting blade holding portion 44, so that the effect of deterioration or malfunction of the mechanism of the cutting blade holding portion 44 caused by the application of the washing liquid to the cutting blade holding portion 44 can be reduced.

上述構成之切割裝置4中，作為驅動切割刀片41之驅動機構之切割刀片保持部44係經由支持樑44a而固定於切割裝置加工區域側面側4b中。換言之，上述切割刀片保持部44係設置於自載置於上述載物台40之載置面40a之半導體晶圓投影面偏離的位置上。 In the cutting device 4 having the above configuration, the cutting blade holding portion 44 as the driving mechanism for driving the cutting blade 41 is fixed to the cutting device processing region side surface side 4b via the support beam 44a. In other words, the dicing blade holding portion 44 is provided at a position deviated from the projection surface of the semiconductor wafer placed on the mounting surface 40a of the stage 40.

載置於上述載物台之半導體晶圓之投影面為表示切割中洗液落下之範圍之面，故藉由自該投影面偏離之位置上，設置作為驅動驅動刀片之驅動機構的驅動刀片保持部44，而不對驅動機構施加洗液，故而實現可消除洗液對驅動機構造成之劣化，且可減少故障之效果。 The projection surface of the semiconductor wafer placed on the stage is a surface indicating a range in which the washing liquid falls during cutting, so that the driving blade which is a driving mechanism for driving the driving blade is provided at a position deviated from the projection surface. The portion 44 does not apply the washing liquid to the driving mechanism, so that the deterioration of the driving mechanism by the washing liquid can be eliminated, and the effect of the malfunction can be reduced.

又，本實施形態4中，對將切割刀片保持部44之支持樑44a固定於切割裝置加工區域側面側4b之例進行了說明，但並不限定於此，只要可於自上述投影面偏離之位置上配置該切割刀片保持部44，則安裝位置可任意選擇。 Further, in the fourth embodiment, the example in which the support beam 44a of the dicing blade holding portion 44 is fixed to the side surface side 4b of the dicing apparatus processing region has been described. However, the present invention is not limited thereto, and may be deviated from the projection surface. When the cutting blade holding portion 44 is disposed at a position, the mounting position can be arbitrarily selected.

(冷卻機構) (cooling mechanism)

又，相比冷卻而言，洗液之主要目的在於消除因切削屑等造成之刀刃堵塞。又，各實施形態中，即便於洗液自半導體晶圓立即落下之情形，由於洗液係連續射出，故半導體晶圓或切割刀片之冷卻並不會發生特別問題。 Moreover, the main purpose of the washing liquid is to eliminate the clogging of the blade due to chips or the like compared to cooling. Further, in each of the embodiments, even when the washing liquid is immediately dropped from the semiconductor wafer, since the washing liquid is continuously ejected, the cooling of the semiconductor wafer or the dicing blade does not cause a particular problem.

例如，為進一步提高半導體晶圓或切割刀片之冷卻效果，亦可於切割裝置中設置例如圖12所示之冷卻機構。 For example, in order to further improve the cooling effect of the semiconductor wafer or the dicing blade, a cooling mechanism such as that shown in FIG. 12 may be provided in the cutting device.

圖12所示之冷卻機構中，為冷卻對貼附於框架上之切割膠帶之半導體晶圓繼續固定．保持的載物台表面部分，使用高熱傳導性切割膠帶作為切割膠帶，自半導體晶圓之內面側經由切割膠帶進行輔助冷卻，進而於載物台內設置冷卻水管，自切割膠帶之進而內面側冷卻半導體晶圓。 In the cooling mechanism shown in Figure 12, the semiconductor wafer for the dicing tape attached to the frame is cooled to be fixed. The surface portion of the stage to be held is used as a dicing tape by using a high thermal conductive dicing tape, and is cooled by a cutting tape from the inner surface side of the semiconductor wafer, and a cooling water pipe is disposed in the stage, and the inner surface of the dicing tape is further The semiconductor wafer is cooled sideways.

(藉由各實施形態之作用效果匯總) (summary by the effect of each embodiment)

如以上般，本發明之各實施形態所揭示之切割裝置中，包括：載物台，其藉由切割膠帶之黏著劑之黏著力而固定載置有半導體晶圓；切割刀片，其旋轉中心軸係與上述載物台之半導體晶圓載置面平行；及洗液供給機構，其於藉由上述切割刀片切割半導體晶圓時，對切割部位噴附洗液(以下稱為洗液)；且至少於切割時，上述切割之半導體晶圓載置面係以自正交於鉛垂方向之基準水平面具有傾斜角之方式受支持，且上述傾斜角係設定為對載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰的角度以上。 As described above, the cutting device according to each embodiment of the present invention includes: a stage on which a semiconductor wafer is fixedly mounted by an adhesive force of an adhesive for cutting a tape; and a cutting blade whose rotation center axis And a washing liquid supply mechanism that sprays a washing liquid (hereinafter referred to as a washing liquid) to the cutting portion when the semiconductor wafer is cut by the cutting blade; and at least At the time of dicing, the diced semiconductor wafer mounting surface is supported by an inclination angle from a reference horizontal plane orthogonal to the vertical direction, and the inclination angle is set to a semiconductor crystal placed on the stage The retention state of the washing liquid on the circle is above the angle at which the collapse begins to collapse.

而且，於使用上述切割裝置之半導體裝置之製造方法中，相對於藉由切割膠帶之黏著劑之黏著力固定載置於載 物台上之半導體晶圓，邊噴附洗液邊進行切割，且該製造方法係於上述載物台之半導體晶圓載置面係以自正交於鉛垂方向之基準水平面具有傾斜角之方式受支持，且上述傾斜角設定為對載置於上述載物台之半導體晶圓上噴附洗液之滯留狀態開始崩潰之角度以上的狀態下，進行上述切割。 Moreover, in the manufacturing method of the semiconductor device using the above cutting device, the carrier is fixedly placed with respect to the adhesive force of the adhesive by cutting the tape. The semiconductor wafer on the stage is cut while being sprayed with the washing liquid, and the manufacturing method is such that the semiconductor wafer mounting surface of the stage has a tilt angle from a reference horizontal plane orthogonal to the vertical direction. The above-described dicing is performed in a state in which the inclination angle is set to be equal to or higher than the angle at which the stagnant state of the rinsing liquid on the semiconductor wafer placed on the stage starts to collapse.

根據上述構成，至少於切割時上述載物台之半導體晶圓載置面係自與鉛垂方向正交之基準水平面具有傾斜角之方式支持，且上述傾斜角係設定為對載置於載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰之角度以上，藉此切割中噴附於半導體晶圓上之洗液自該半導體晶圓上立即流落，故可抑制切割中洗液滯留於半導體晶圓上之狀況。 According to the above configuration, at least the semiconductor wafer mounting surface of the stage is supported at an inclination angle from a reference horizontal plane orthogonal to the vertical direction at the time of dicing, and the inclination angle is set to be placed on the stage. The retention state of the washing liquid sprayed on the semiconductor wafer starts to collapse above the angle, whereby the washing liquid sprayed on the semiconductor wafer in the cutting immediately flows down from the semiconductor wafer, thereby suppressing the retention of the washing liquid during cutting The condition on a semiconductor wafer.

藉此，切割中可防止滯留之洗液滲入半導體晶圓之切割部位及端部，故半導體晶圓與切割膠帶之間之黏著劑接合部分不會滲入洗液。 Thereby, during the cutting, the retained washing liquid can be prevented from infiltrating into the cut portion and the end portion of the semiconductor wafer, so that the adhesive joint portion between the semiconductor wafer and the dicing tape does not penetrate into the washing liquid.

其結果，切割膠帶之黏著劑與洗液未發生反應，故黏著劑之黏著力不會下降，從而可防止半導體晶圓自切割膠帶剝落，且可抑制自半導體晶圓切出之半導體晶片之飛出(因自切割膠帶剝落造成半導體晶片之飛出)。 As a result, the adhesive of the dicing tape does not react with the washing liquid, so the adhesive force of the adhesive does not decrease, thereby preventing the semiconductor wafer from peeling off from the dicing tape, and suppressing the flying of the semiconductor wafer cut out from the semiconductor wafer. Out (the semiconductor wafer flies out due to peeling off from the dicing tape).

因此，切割中，未對半導體晶圓施加不必要之應力，可自該半導體晶圓適當切出半導體晶片，故提高半導體裝置之良率，其結果，實現可降低半導體裝置之成本之效果。 Therefore, during the dicing, unnecessary stress is not applied to the semiconductor wafer, and the semiconductor wafer can be appropriately cut out from the semiconductor wafer, so that the yield of the semiconductor device is improved, and as a result, the cost of the semiconductor device can be reduced.

至此，對傾斜角θ為10°以上、較佳為20°以上，以及90°之情形之實施形態、180°之情形之實施形態進行了說明， 但上述傾斜角θ係任意設定為10°以上350°以下即可。只要於該範圍內設定傾斜角θ，便可防止切割中洗液滯留於半導體晶圓上。 Heretofore, an embodiment in which the inclination angle θ is 10° or more, preferably 20° or more, and 90°, and 180° is described. However, the above-described inclination angle θ may be arbitrarily set to be 10° or more and 350° or less. By setting the inclination angle θ within this range, it is possible to prevent the washing liquid from remaining on the semiconductor wafer during cutting.

然而，切割裝置自身之構造亦必須根據各角度而定進行變更。例如傾斜角90°、180°之情形，如上述般，必須變更載物台、切割刀片之配置。 However, the configuration of the cutting device itself must also be changed according to each angle. For example, in the case of the inclination angles of 90° and 180°, it is necessary to change the arrangement of the stage and the cutting blade as described above.

又，必須根據上述傾斜角而得，改變噴附洗液之方向。 Further, it is necessary to change the direction in which the washing liquid is sprayed in accordance with the above inclination angle.

即，較佳為，切割時設定之上述傾斜角θ為10°至90°、270°至350°時，自上方朝下方對切割部位噴附洗液，而切割時設定之上述傾斜角θ為90°至270°時，自下方朝上方對切割部位噴附洗液。 In other words, when the inclination angle θ set at the time of cutting is 10° to 90° or 270° to 350°, the washing liquid is sprayed from the upper side toward the cutting portion, and the inclination angle θ set at the time of cutting is At 90° to 270°, the washing solution is sprayed from the bottom toward the cutting portion.

根據上述構成，根據傾斜角而改變對半導體晶圓噴附之洗液之噴附方向，故可穩定地對半導體晶圓噴附洗液。 According to the above configuration, the direction in which the washing liquid is sprayed onto the semiconductor wafer is changed in accordance with the inclination angle, so that the washing liquid can be stably sprayed onto the semiconductor wafer.

例如切割時設定之上述傾斜角θ為10°至90°、270°至350°時，除90°、270°以外之情形，載物台之載置面係朝向上方，故藉由自上方朝下方對切割部位噴附洗液，可有效進行洗液之噴附。 For example, when the inclination angle θ set at the time of cutting is 10° to 90° or 270° to 350°, except for 90° and 270°, the mounting surface of the stage is upward, so that the upper side faces upwards. The washing liquid is sprayed on the cutting portion below, and the washing liquid can be effectively sprayed.

又，切割時設定之上述傾斜角θ為90°至270°時，除90°、270°以外之情形，載物台之載置面係朝向下方，故藉由自下方朝上方對切割部位噴附洗液，可有效進行洗液之噴附。 Further, when the inclination angle θ set at the time of cutting is 90° to 270°, the placement surface of the stage is directed downward except for 90° and 270°, so that the cutting portion is sprayed from the lower side toward the upper side. With the washing liquid, it can effectively spray the washing liquid.

如上述般，根據本發明之切割裝置，切割中對半導體晶圓未施加應力，故可適當切割不耐應力且薄膜化之太陽電池用之半導體晶圓(太陽電池)。 As described above, according to the cutting device of the present invention, since no stress is applied to the semiconductor wafer during the dicing, the semiconductor wafer (solar cell) for the solar cell which is not resistant to stress and thinned can be appropriately cut.

進而，根據本發明之切割裝置，切割中半導體晶圓與切割膠帶之間難以滲入洗液，故可防止切割膠帶之黏著劑與洗液發生反應造成黏著劑之黏著力下降。因此，藉由(1)採用黏著劑之黏著力較弱之切割膠帶、(2)採用普通的海綿輥，可於半導體晶圓輕微貼附於切割膠帶之狀態下進行切割。 Further, according to the cutting device of the present invention, it is difficult to infiltrate the washing liquid between the semiconductor wafer and the dicing tape during cutting, so that the adhesive of the dicing tape can be prevented from reacting with the washing liquid to cause a decrease in the adhesive force of the adhesive. Therefore, the cutting can be performed in a state where the semiconductor wafer is slightly attached to the dicing tape by (1) using a dicing tape having a weak adhesive force of the adhesive, and (2) using a conventional sponge roller.

如此，若為半導體晶圓輕微貼附於切割膠帶之狀態，則切割後為將半導體晶圓自切割膠帶剝落，無需對半導體晶圓施加必要以上之應力，故可將半導體晶圓自切割膠帶輕鬆剝落。 In this way, if the semiconductor wafer is slightly attached to the dicing tape, the semiconductor wafer is peeled off from the dicing tape after dicing, and it is not necessary to apply the necessary stress to the semiconductor wafer, so the semiconductor wafer can be easily self-cut tape. Peel off.

因此，自切割膠帶剝落時，無需對半導體晶圓施加必要以上之應力，故可較佳用於存在因自切割膠帶剝落時之應力而破碎之風險的薄膜化之半導體晶圓。 Therefore, when the dicing tape is peeled off, it is not necessary to apply a necessary stress to the semiconductor wafer, so that it can be preferably used for a thinned semiconductor wafer in which there is a risk of breakage due to stress at the time of peeling off from the dicing tape.

特別是太陽電池用之半導體晶圓(以下稱為太陽電池)係代表薄膜半導體晶圓之一例，且切割太陽電池時，若是太陽電池之電極面側貼附於切割膠帶之情形，則切割膠帶之黏著劑會進入該電極之凹部而發揮強力的錨定效果，故切割膠帶之黏著劑之黏著力需要儘量弱化。相反的，若是太陽電池之受光面側貼附於切割膠帶之情形，由於是薄膜半導體晶圓，當然亦需要使切割膠帶之黏著劑之黏著力儘量弱化。該黏著劑之黏著力只要為在切割過程中太陽電池無法自切割膠帶剝落之程度之黏著力即可。 In particular, a semiconductor wafer for a solar cell (hereinafter referred to as a solar cell) is an example of a thin film semiconductor wafer, and when the solar cell is cut, if the electrode surface side of the solar cell is attached to the dicing tape, the dicing tape is used. The adhesive enters the concave portion of the electrode to exert a strong anchoring effect, so the adhesive force of the adhesive for cutting the tape needs to be weakened as much as possible. On the other hand, if the light-receiving side of the solar cell is attached to the dicing tape, since it is a thin-film semiconductor wafer, it is of course necessary to make the adhesive force of the dicing tape as weak as possible. The adhesive force of the adhesive is only required to be an adhesive force at which the solar cell cannot peel off from the cutting tape during the cutting process.

如此，於太陽電池之情形時，由於以極力弱化切割膠帶之黏著劑之黏著力之狀態進行切割，故會有洗液易滲入太 陽電池與切割膠帶之黏著劑之間之狀況，必須儘可能消除滲入之洗液與切割膠帶之黏著劑發生反應導致黏著劑之黏著力降低之狀況。 Thus, in the case of a solar cell, since the cutting is performed in a state in which the adhesive force of the adhesive tape of the dicing tape is weakened as much as possible, the washing liquid is easily infiltrated too. The condition between the positive electrode and the adhesive of the dicing tape must be such as to eliminate as much as possible the reaction between the infiltrated washing liquid and the adhesive of the dicing tape, resulting in a decrease in the adhesive force of the adhesive.

基於上述理由，本發明之切割裝置可較佳用於自普通的半導體晶圓乃至類似太陽電池般不耐應力之半導體晶圓的各種半導體晶圓之切割，尤其適用於太陽電池之切割。 For the above reasons, the cutting device of the present invention can be preferably used for cutting various semiconductor wafers from ordinary semiconductor wafers or semiconductor wafers that are not stress-resistant, such as solar cells.

又，於切割時設定之上述傾斜角較佳為10°至350°。 Further, the above-described inclination angle set at the time of cutting is preferably from 10 to 350.

上述傾斜角若為10°至350°之範圍，則噴附於半導體晶圓上之洗液會立即流落，可防止切割過程中滯留之洗液滲入半導體晶圓之切割部位及端部，故可切實消除因切割膠帶之黏著劑與洗液發生反應導致黏著劑之黏著力下降而造成半導體晶圓自切割膠帶剝落，且可抑制自半導體晶圓切出之半導體晶片之飛出(因自切割膠帶剝落所致之半導體晶片之飛出)。因此，發揮防範因洗液之滲入引起之各種問題之效果。 If the inclination angle is in the range of 10° to 350°, the washing liquid sprayed on the semiconductor wafer will immediately flow down, and the washing liquid retained in the cutting process can be prevented from infiltrating into the cutting portion and the end portion of the semiconductor wafer, so It is possible to effectively eliminate the peeling of the semiconductor wafer from the dicing tape due to the adhesion of the adhesive of the dicing tape and the washing liquid, and the semiconductor wafer can be prevented from flying out of the semiconductor wafer (since the self-cut tape) The semiconductor wafer caused by the peeling off). Therefore, the effect of preventing various problems caused by the penetration of the washing liquid is exerted.

又，為易使洗液自半導體晶圓流下，上述傾斜角較佳為20°以上340°以下。 Further, in order to facilitate the flow of the washing liquid from the semiconductor wafer, the inclination angle is preferably 20 or more and 340 or less.

於切割時設定之上述傾斜角較佳為90°。 The above inclination angle set at the time of cutting is preferably 90°.

藉由上述傾斜角為90°，洗液之自重落下方向與重力方向一致，且由半導體晶圓上之表面張力所引起之洗液滯留較少，故可使洗液最有效地流落。 Since the inclination angle is 90°, the falling direction of the washing liquid coincides with the direction of gravity, and the washing liquid caused by the surface tension on the semiconductor wafer is less retained, so that the washing liquid can be most effectively discharged.

藉此，可切實防止洗液自半導體晶圓之切割部位及端部滲入半導體晶圓與切割膠帶之黏著劑之間，故可切實消除因切割膠帶之黏著劑與洗液發生反應導致黏著劑之黏著力 下降而造成半導體晶圓自切割膠帶剝落，且可抑制自半導體晶圓切出之半導體晶片之飛出(因自切割膠帶剝落所致之半導體晶片之飛出)。 Thereby, it is possible to reliably prevent the washing liquid from infiltrating between the semiconductor wafer and the adhesive of the dicing tape from the dicing portion and the end portion of the semiconductor wafer, so that the adhesive agent due to the reaction between the adhesive of the dicing tape and the washing liquid can be reliably eliminated. Adhesion The drop causes the semiconductor wafer to peel off from the dicing tape, and the flying of the semiconductor wafer cut out from the semiconductor wafer (the flying of the semiconductor wafer due to flaking from the dicing tape) can be suppressed.

於切割時設定之上述傾斜角較佳為180°。 The above inclination angle set at the time of cutting is preferably 180°.

上述傾斜角為180°係指以使半導體晶圓之切割面朝下方、切割刀片朝上方之方式配置之切割裝置之構造。其表示調換配置於通常之切割裝置之上表面與下表面之構件之構造。 The inclination angle of 180° is a structure of a cutting device that is disposed such that the cut surface of the semiconductor wafer faces downward and the cutting blade faces upward. It represents the configuration of a member that is disposed on the upper surface and the lower surface of a conventional cutting device.

因此，無需使載物台之半導體晶圓載置面傾斜之機構，只需反轉現有切割裝置之載物台與切割刀片之配置即可，故可容易且廉價地提供切割裝置。 Therefore, the mechanism for tilting the semiconductor wafer mounting surface of the stage is not required, and it is only necessary to reverse the arrangement of the stage and the dicing blade of the conventional cutting device, so that the cutting device can be easily and inexpensively provided.

驅動上述切割刀片之驅動機構係設置於自載置於上述載物台之半導體晶圓之投影面偏離之位置。 The driving mechanism for driving the dicing blade is disposed at a position offset from a projection surface of the semiconductor wafer placed on the stage.

載置於上述載物台之半導體晶圓之投影面係表示切割中洗液落下之範圍之面，故藉由自該投影面偏離之位置上設置驅動切割刀片之驅動機構，而不對驅動機構施加洗液，故實現消除洗液對驅動機構造成之劣化，而可減少故障之效果。 The projection surface of the semiconductor wafer placed on the stage indicates the surface of the range in which the washing liquid falls during cutting. Therefore, the driving mechanism for driving the cutting blade is disposed at a position deviated from the projection surface without applying the driving mechanism. The washing liquid can eliminate the deterioration of the driving mechanism caused by the washing liquid, and can reduce the effect of the malfunction.

上述洗液供給機構較佳為，切割時設定之上述傾斜角為10°至90°、270°至350°時，自上方朝下方對切割部位噴附洗液，而切割時設定之上述傾斜角為90°至270°時，自下方朝上方對切割部位噴附洗液。 Preferably, the washing liquid supply mechanism sprays the washing liquid from the upper side toward the cutting portion when the inclined angle set at the time of cutting is 10° to 90° or 270° to 350°, and the inclined angle is set at the time of cutting. When it is 90° to 270°, the washing liquid is sprayed on the cutting portion from the bottom upward.

根據上述構成，根據傾斜角而定改變對半導體晶圓噴附洗液之噴附方向，故可穩定地對半導體晶圓噴附洗液。 According to the above configuration, the direction in which the washing liquid is sprayed onto the semiconductor wafer is changed in accordance with the inclination angle, so that the washing liquid can be stably sprayed onto the semiconductor wafer.

例如切割時設定之上述傾斜角為10°至90°、270°至350°時，除90°、270°以外之情形，載物台之載置面係朝向上方，故藉由自上方朝下方對切割部位噴附洗液，可有效進行洗液之噴附。 For example, when the inclination angle set at the time of cutting is 10° to 90° or 270° to 350°, the placement surface of the stage is upward except for 90° and 270°, so that the upper side faces downward. The washing liquid is sprayed on the cutting portion, and the washing of the washing liquid can be effectively performed.

又，切割時設定之上述傾斜角為90°至270°時，除90°、270°以外之情形，載物台之載置面係朝向下方，故藉由自下方朝上方對切割部位噴附洗液，可有效進行洗液之噴附。 Further, when the inclination angle set at the time of cutting is 90° to 270°, the placement surface of the stage is directed downward except for 90° and 270°, so that the cutting portion is sprayed from the bottom upward. The lotion can effectively spray the lotion.

上述半導體晶圓較佳為太陽電池用之半導體晶圓。 The semiconductor wafer is preferably a semiconductor wafer for a solar cell.

根據上述構成之切割裝置，切割過程中對半導體晶圓並不施加應力，故可適當地切割不耐應力且薄膜化之太陽電池用之半導體晶圓。 According to the cutting device having the above configuration, no stress is applied to the semiconductor wafer during the dicing process, so that the semiconductor wafer for a solar cell which is not resistant to stress and thinned can be appropriately cut.

本發明並不限定於上述各實施形態，於申請專利範圍所示之範圍內可進行各種變更，且適當組合不同實施形態中分別揭示之技術手段而獲得之實施形態亦包含於本發明之技術範圍。 The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. .

[產業上利用可能性] [Industry use possibility]

本發明可適用於半導體相關領域，特別是可適用於預見今後需求大幅增加之太陽電池(太陽電池)領域。 The present invention is applicable to the field of semiconductors, and is particularly applicable to the field of solar cells (solar cells) which are expected to have a significant increase in demand in the future.

1‧‧‧切割裝置 1‧‧‧ cutting device

1a‧‧‧切割裝置加工區域頂面側 1a‧‧‧Top side of the cutting device processing area

1b‧‧‧切割裝置加工區域底面側 1b‧‧‧Bottom side of the processing area of the cutting device

2‧‧‧切割裝置 2‧‧‧ Cutting device

2a‧‧‧切割裝置加工區域右側面側 2a‧‧‧The right side of the cutting device processing area

2b‧‧‧切割裝置加工區域左側面側 2b‧‧‧Drawing device processing area left side

3‧‧‧切割裝置 3‧‧‧ Cutting device

3a‧‧‧切割裝置加工區域頂面側 3a‧‧‧Top side of the cutting device processing area

3b‧‧‧切割裝置加工區域底面側 3b‧‧‧Bottom side of the processing area of the cutting device

4‧‧‧切割裝置 4‧‧‧ Cutting device

4a‧‧‧切割裝置加工區域頂面側 4a‧‧‧Top side of the cutting device processing area

4b‧‧‧切割裝置加工區域底面側 4b‧‧‧Bottom side of the processing area of the cutting device

10‧‧‧載物台 10‧‧‧stage

10a‧‧‧載置面 10a‧‧‧Loading surface

11‧‧‧切割刀片 11‧‧‧ cutting blade

11a‧‧‧刀片中心軸 11a‧‧‧Shape center axis

12‧‧‧噴嘴(洗液供給機構) 12‧‧‧Nozzle (washing liquid supply mechanism)

13‧‧‧框架 13‧‧‧Frame

14‧‧‧切割刀片保持部(驅動機構) 14‧‧‧Cutting blade holder (drive mechanism)

14a‧‧‧支持樑 14a‧‧‧Support beam

15‧‧‧切割膠帶 15‧‧‧Cut Tape

16‧‧‧半導體晶圓 16‧‧‧Semiconductor Wafer

20‧‧‧載物台 20‧‧‧stage

20a‧‧‧載置面 20a‧‧‧Loading surface

21‧‧‧切割膠帶 21‧‧‧Cut Tape

21a‧‧‧刀片中心軸 21a‧‧‧blade central axis

22‧‧‧噴嘴(洗液供給機構) 22‧‧‧Nozzles (washing liquid supply mechanism)

23‧‧‧框架 23‧‧‧Frame

24‧‧‧切割刀片保持部(驅動機構) 24‧‧‧Cutting blade holder (drive mechanism)

24a‧‧‧支持樑 24a‧‧‧Support beam

25‧‧‧切割膠帶 25‧‧‧Cut Tape

26‧‧‧半導體晶圓 26‧‧‧Semiconductor wafer

30‧‧‧載物台 30‧‧‧stage

30a‧‧‧載置面 30a‧‧‧Loading surface

31‧‧‧切割刀片 31‧‧‧ cutting blade

31a‧‧‧刀片中心軸 31a‧‧‧ Blade Center Shaft

32‧‧‧噴嘴(洗液供給機構) 32‧‧‧Nozzles (washing liquid supply mechanism)

33‧‧‧框架 33‧‧‧Frame

34‧‧‧切割刀片保持部(驅動機構) 34‧‧‧Cutting blade holder (drive mechanism)

34a‧‧‧支持樑 34a‧‧‧Support beam

35‧‧‧切割膠帶 35‧‧‧Cut Tape

36‧‧‧半導體晶圓 36‧‧‧Semiconductor Wafer

40‧‧‧載物台 40‧‧‧stage

40a‧‧‧載置面 40a‧‧‧Loading surface

41‧‧‧切割刀片 41‧‧‧Cutting Blade

41a‧‧‧刀片中心軸 41a‧‧‧blade central axis

42‧‧‧噴嘴(洗液供給機構) 42‧‧‧ nozzle (washing liquid supply mechanism)

43‧‧‧框架 43‧‧‧Frame

44‧‧‧切割刀片保持部(驅動機構) 44‧‧‧Cutting blade holder (drive mechanism)

44a‧‧‧支持樑 44a‧‧‧Support beam

45‧‧‧切割膠帶 45‧‧‧Cut Tape

100‧‧‧加工區域 100‧‧‧Processing area

200‧‧‧加工區域 200‧‧‧Processing area

300‧‧‧加工區域 300‧‧‧Processing area

400‧‧‧加工區域 400‧‧‧Processing area

A‧‧‧基準水平面 A‧‧‧ benchmark level

B‧‧‧基準法線面 B‧‧‧ benchmark normal surface

θ‧‧‧傾斜角 θ‧‧‧Tilt angle

圖1係本發明之實施形態1之切割裝置之概略構成圖。 Fig. 1 is a schematic configuration diagram of a cutting device according to a first embodiment of the present invention.

圖2係表示將半導體晶圓貼附於裝置搬送用之框架之狀態之概略剖面圖。 2 is a schematic cross-sectional view showing a state in which a semiconductor wafer is attached to a frame for device transfer.

圖3係圖1所示之切割裝置之鳥瞰圖。 Figure 3 is a bird's eye view of the cutting device shown in Figure 1.

圖4係藉由圖1所示之切割裝置之半導體晶圓切斷部之放大圖。 4 is an enlarged view of a semiconductor wafer cutting portion of the cutting device shown in FIG. 1.

圖5係本發明之實施形態2之切割裝置之概略構成圖。 Fig. 5 is a schematic configuration diagram of a cutting device according to a second embodiment of the present invention.

圖6係圖5所示之切割裝置之鳥瞰圖。 Figure 6 is a bird's eye view of the cutting device shown in Figure 5.

圖7係藉由圖5所示之切割裝置之半導體晶圓切斷部之放大圖。 Fig. 7 is an enlarged view of a semiconductor wafer cutting portion of the cutting device shown in Fig. 5.

圖8係本發明之實施形態3之切割裝置之概略構成圖。 Fig. 8 is a schematic configuration diagram of a cutting device according to a third embodiment of the present invention.

圖9係圖8所示之切割裝置之鳥瞰圖。 Figure 9 is a bird's eye view of the cutting device shown in Figure 8.

圖10係藉由圖8所示之切割裝置之半導體晶圓切斷部之放大圖。 Fig. 10 is an enlarged view of a semiconductor wafer cutting portion of the cutting device shown in Fig. 8.

圖11係本發明之實施形態4之切割裝置之概略構成圖。 Figure 11 is a schematic configuration diagram of a cutting device according to a fourth embodiment of the present invention.

圖12係適用於本發明之切割裝置之冷卻機構之概略構成圖。 Fig. 12 is a schematic configuration view of a cooling mechanism applied to the cutting device of the present invention.

圖13係先前之切割裝置之鳥瞰圖。 Figure 13 is a bird's eye view of a prior cutting device.

圖14係圖13所示之切割裝置之概略構成圖。 Fig. 14 is a schematic block diagram of the cutting device shown in Fig. 13.

圖15係藉由圖13所示之切割裝置之半導體晶圓切斷部之放大圖。 Fig. 15 is an enlarged view of a semiconductor wafer cutting portion of the cutting device shown in Fig. 13.

圖16係用以對半導體晶圓與切割膠帶之間滲入洗液之機制進行說明之圖。 Fig. 16 is a view for explaining a mechanism for infiltrating a bath between a semiconductor wafer and a dicing tape.

1‧‧‧切割裝置 1‧‧‧ cutting device

1a‧‧‧切割裝置加工區域頂面側 1a‧‧‧Top side of the cutting device processing area

1b‧‧‧切割裝置加工區域底面側 1b‧‧‧Bottom side of the processing area of the cutting device

10‧‧‧載物台 10‧‧‧stage

10a‧‧‧載置面 10a‧‧‧Loading surface

11‧‧‧切割刀片 11‧‧‧ cutting blade

11a‧‧‧刀片中心軸 11a‧‧‧Shape center axis

12‧‧‧噴嘴(洗液供給機構) 12‧‧‧Nozzle (washing liquid supply mechanism)

13‧‧‧框架 13‧‧‧Frame

14‧‧‧切割刀片保持部(驅動機構) 14‧‧‧Cutting blade holder (drive mechanism)

14a‧‧‧支持樑 14a‧‧‧Support beam

100‧‧‧加工區域 100‧‧‧Processing area

θ‧‧‧傾斜角 θ‧‧‧Tilt angle

Claims (8)

一種切割裝置，其特徵在於包括：載物台，其藉由切割膠帶之黏著劑之黏著力而將半導體晶圓固定載置；切割刀片，其旋轉中心軸與上述載物台之半導體晶圓載置面平行；及洗液供給機構，其於以上述切割刀片切割半導體晶圓時，對切割部位噴附洗液；且至少於切割時，上述載物台之半導體晶圓載置面係以自正交於鉛垂方向之基準水平面具有傾斜角之方式受支持，且上述傾斜角係設定為對載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰之角度以上。 A cutting device, comprising: a stage for fixedly mounting a semiconductor wafer by an adhesive force of an adhesive for cutting a tape; and a cutting blade having a central axis of rotation and a semiconductor wafer mounted on the stage Parallel; and a liquid supply mechanism for spraying a cleaning liquid to the cutting portion when the semiconductor wafer is cut by the cutting blade; and at least when cutting, the semiconductor wafer mounting surface of the stage is self-orthogonal The reference horizontal plane in the vertical direction is supported so as to have an inclination angle, and the inclination angle is set to be equal to or higher than the angle at which the retention state of the washing liquid sprayed on the semiconductor wafer placed on the stage starts to collapse. 如請求項1之切割裝置，其中於切割時設定之上述傾斜角為10°至350°。 The cutting device of claim 1, wherein the above-described inclination angle set at the time of cutting is 10° to 350°. 如請求項2之切割裝置，其中於切割時設定之上述傾斜角為90°。 The cutting device of claim 2, wherein the above-described inclination angle set at the time of cutting is 90°. 如請求項2之切割裝置，其中於切割時設定之上述傾斜角為180°。 The cutting device of claim 2, wherein the above-mentioned inclination angle set at the time of cutting is 180°. 如請求項4之切割裝置，其中驅動上述切割刀片之驅動機構係設置於自載置於上述載物台之半導體晶圓之投影面偏離之位置。 The cutting device of claim 4, wherein the driving mechanism for driving the cutting blade is disposed at a position offset from a projection surface of the semiconductor wafer placed on the stage. 如請求項2之切割裝置，其中上述洗液供給機構為：於切割時設定之上述傾斜角為10°至90°、270°至350°時，自上方朝下方對切割部位噴附洗液； 於切割時設定之上述傾斜角為90°至270°時，自下方朝上方對切割部位噴附洗液。 The cutting device of claim 2, wherein the washing liquid supply mechanism is: when the inclined angle set at the time of cutting is 10° to 90°, 270° to 350°, the washing liquid is sprayed from the upper side toward the cutting portion; When the above-described inclination angle set at the time of cutting is 90° to 270°, the washing liquid is sprayed onto the cutting portion from the bottom upward. 如請求項1至6中任一項之切割裝置，其中上述半導體晶圓係太陽電池用之半導體晶圓。 The cutting device of any one of claims 1 to 6, wherein the semiconductor wafer is a semiconductor wafer for a solar cell. 一種半導體裝置之製造方法，其特徵在於，其係對藉由切割膠帶之黏著劑之黏著力而固定載置於載物台上之半導體晶圓一面噴附洗液一面進行切割者，且上述載物台之半導體晶圓載置面以自正交於鉛垂方向之基準水平面具有傾斜角之方式受支持，且上述傾斜角設定為對載置於上述載物台之半導體晶圓上噴附之洗液之滯留狀態開始崩潰之角度以上的狀態下，進行上述切割。 A method of manufacturing a semiconductor device, characterized in that a semiconductor wafer attached to a stage is fixed by a bonding force of an adhesive of a dicing tape, and a rinsing liquid is sprayed while being dicing The semiconductor wafer mounting surface of the object stage is supported by a tilt angle from a reference horizontal plane orthogonal to the vertical direction, and the tilt angle is set to be sprayed on the semiconductor wafer placed on the stage. The above cutting is performed in a state where the liquid retention state starts to collapse.
TW101134184A 2011-10-05 2012-09-18 Dicing device and production method of semiconductor device TW201324657A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011221126 2011-10-05

Publications (1)

Publication Number Publication Date
TW201324657A true TW201324657A (en) 2013-06-16

Family

ID=48043542

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101134184A TW201324657A (en) 2011-10-05 2012-09-18 Dicing device and production method of semiconductor device

Country Status (2)

Country Link
TW (1) TW201324657A (en)
WO (1) WO2013051375A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108312369B (en) * 2018-03-28 2024-05-07 深圳赛意法微电子有限公司 Wafer cutting equipment and wafer cutting method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130010U (en) * 1984-02-09 1985-08-31 日本電気株式会社 Semiconductor wafer cutting equipment
JPS61148004A (en) * 1985-11-27 1986-07-05 株式会社日立製作所 Dicing device
JPS63151405A (en) * 1986-12-16 1988-06-24 日本電気株式会社 Method of cutting semiconductor wafer
JPS6427904A (en) * 1987-07-24 1989-01-30 Hitachi Ltd Method and apparatus for dicing
JPH06275712A (en) * 1993-03-24 1994-09-30 Nec Kansai Ltd Dicing apparatus
JPH1092772A (en) * 1996-09-11 1998-04-10 Hitachi Ltd Dicing method and dicing equipment
JP3602718B2 (en) * 1998-03-31 2004-12-15 シャープ株式会社 Dicing method
JP3617923B2 (en) * 1998-04-06 2005-02-09 信越化学工業株式会社 Single-crystal silicon solar cell and module manufacturing method
JP5026235B2 (en) * 2007-11-29 2012-09-12 キヤノンマシナリー株式会社 Substrate cutting device

Also Published As

Publication number Publication date
WO2013051375A1 (en) 2013-04-11

Similar Documents

Publication Publication Date Title
JP5009254B2 (en) Resin coating equipment
KR100877276B1 (en) Substrate processing apparatus, liquid film freezing method and substrate processing method
US20070235062A1 (en) Substrate processing method and substrate processing apparatus
JP3447602B2 (en) Method for manufacturing semiconductor device
TWI680521B (en) Device and method for at least partial loosening of a connecting layer of a temporarily bonded substrate stack
US8997821B2 (en) Delamination system
JP2010207723A (en) Resin film forming apparatus
JP2007110066A (en) Method of manufacturing semiconductor device, polishing device, and polishing system
JP5875962B2 (en) Peeling device, peeling system and peeling method
JP2015028971A (en) Wafer washing apparatus and wafer washing method
JP2013172079A (en) Substrate processing device and processing liquid suction method
JP2011224642A (en) Protective material and ablation processing method
US20110117283A1 (en) Spray coating system
US20100147335A1 (en) Liquid processing apparatus, liquid processing method, and storage medium
KR20180035902A (en) Substrate processing method and substrate processing apparatus
TW201324657A (en) Dicing device and production method of semiconductor device
JP7199602B2 (en) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
KR20010039581A (en) Ultrasonic Cleaning Device And Resist-Stripping Device
JP4668350B1 (en) Semiconductor wafer separator
JP4347734B2 (en) Substrate processing equipment
JP7337633B2 (en) SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
TWI708641B (en) Substrate treatment method
JP6417164B2 (en) LAMINATE MANUFACTURING DEVICE, LAMINATE, SEPARATING DEVICE, AND LAMINATE MANUFACTURING METHOD
TWI413710B (en) Plating treatment apparatus
JP6148363B2 (en) Treatment liquid supply method