JP2011187841A - 電子装置、中継部材、実装基板、及び電子装置の製造方法 - Google Patents
電子装置、中継部材、実装基板、及び電子装置の製造方法 Download PDFInfo
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- JP2011187841A JP2011187841A JP2010053698A JP2010053698A JP2011187841A JP 2011187841 A JP2011187841 A JP 2011187841A JP 2010053698 A JP2010053698 A JP 2010053698A JP 2010053698 A JP2010053698 A JP 2010053698A JP 2011187841 A JP2011187841 A JP 2011187841A
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/49531—Additional leads the additional leads being a wiring board
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Abstract
【解決手段】中継部材100は、少なくとも一部が平面視で半導体チップ20とリード14の間に位置しており、表面に複数の金属が互いに絶縁した状態で設けられている。第1ワイヤ40及び第2ワイヤ30の少なくとも一方は、他端34,44が中継部材100の表面に位置する金属の少なくとも一つに接合している。また第1ワイヤ40の他端44と第2ワイヤ30の他端34は、中継部材100のうち半導体チップ20とリード14の間に位置する部分で、互いに接合している。
【選択図】図1
Description
平面視で前記第1外部接続端子と重なっておらず、第2外部接続端子を有する第2電子部品と、
少なくとも一部が平面視で前記第2電子部品と前記第1外部接続端子の間に位置しており、表面に複数の金属が互いに絶縁した状態で設けられている中継領域と、
一端が前記第1外部接続端子に接続していて他端が前記中継領域に位置している第1ワイヤと、
一端が前記第2外部接続端子に接続していて他端が前記中継領域に位置している第2ワイヤと、
前記第1電子部品、前記第2電子部品、前記中継領域、前記第1ワイヤ、及び前記第2ワイヤを封止する封止樹脂と、
を備え、
前記第1ワイヤ及び前記第2ワイヤの少なくとも一方は、前記他端が少なくとも一つの前記金属に接合しており、
前記第1ワイヤの前記他端と前記第2ワイヤの前記他端は、前記中継領域において互いに接合している電子装置が提供される。
少なくとも表面が絶縁性の基材と、
前記基材の表面の少なくとも一部に位置しており、互いに離間している複数の金属と、
を備える中継部材が提供される。
前記第1電子部品が実装される第1実装領域と、
平面視で前記第1実装領域とは異なる場所に設けられ、前記第1電子部品にワイヤを介して接続される接続端子が配置される端子領域と、
前記第1実装領域と前記端子領域との間に位置しており、表面に複数の金属が互いに絶縁した状態で設けられている中継領域と、
を備える実装基板が提供される。
前記第1外部接続端子と前記第2電子部品の間に、少なくとも表面に複数の金属が互いに絶縁した状態で設けられている中継領域を設ける工程と、
第1ワイヤの一端を前記第1外部接続端子に接続し、第2ワイヤの一端を前記第2外部接続端子に接続し、前記第1ワイヤ及び前記第2ワイヤの少なくとも一方の他端を、前記中継領域に位置している少なくとも一つの前記金属に接合させ、かつ、前記第1ワイヤの前記他端及び前記第2ワイヤの前記他端を、前記中継領域において互いに接合させる工程と、
前記第1電子部品、前記第2電子部品、前記中継領域、前記第1ワイヤ、及び前記第2ワイヤを封止樹脂で封止する工程と、
を備える電子装置の製造方法が提供される。
12 ダイパッド
14 リード
20 半導体チップ
22 電極パッド
30 第2ワイヤ
32 一端
34 他端
40 第1ワイヤ
42 一端
44 他端
50 封止樹脂
60 インターポーザ
62 電極
64 外部端子
70 半導体チップ
72 電極パッド
80 ワイヤ
90 ワイヤ
100 中継部材
101 中継領域
102 金属パターン
103 金属粒子
104 基板
105 導体膜
106 基板
107 絶縁層
108 基材
Claims (21)
- 第1外部接続端子を有する第1電子部品と、
平面視で前記第1外部接続端子と重なっておらず、第2外部接続端子を有する第2電子部品と、
少なくとも一部が平面視で前記第2電子部品と前記第1外部接続端子の間に位置しており、表面に複数の金属が互いに絶縁した状態で設けられている中継領域と、
一端が前記第1外部接続端子に接続していて他端が前記中継領域に位置している第1ワイヤと、
一端が前記第2外部接続端子に接続していて他端が前記中継領域に位置している第2ワイヤと、
前記第1電子部品、前記第2電子部品、前記中継領域、前記第1ワイヤ、及び前記第2ワイヤを封止する封止樹脂と、
を備え、
前記第1ワイヤ及び前記第2ワイヤの少なくとも一方は、前記他端が少なくとも一つの前記金属に接合しており、
前記第1ワイヤの前記他端と前記第2ワイヤの前記他端は、前記中継領域において互いに接合している電子装置。 - 請求項1に記載の電子装置において、
前記複数の金属は、それぞれが、平面視において前記第1ワイヤの前記他端及び前記第2ワイヤの前記他端よりも小さい電子装置。 - 請求項1又は2に記載の電子装置において、
前記中継領域は、
絶縁体からなる基材と、
前記基材上にドット状に形成された前記金属のパターンと、
を有する電子装置。 - 請求項1又は2に記載の電子装置において、
前記中継領域は、
絶縁体からなる基材と、
前記基材内に分散された複数の前記金属の粒子と、
を有しており、前記複数の粒子の少なくとも一部が前記基材の表面から露出している電子装置。 - 請求項4に記載の電子装置において、
前記複数の粒子のうち前記基材の表面から露出している部分に形成され、前記粒子を構成する金属よりも前記第1ワイヤ及び前記第2ワイヤと合金化しやすい金属からなる導体膜をさらに備える電子装置。 - 請求項1〜5のいずれか一つに記載の電子装置において、
表面に前記中継領域を有する中継部材を備え、
前記中継部材は、平面形状が前記第2電子部品よりも大きく、
前記第2電子部品は、前記中継部材上に配置されており、
前記中継領域は、前記中継部材のうち少なくとも前記第2電子部品が配置されていない領域に設けられている電子装置。 - 請求項6に記載の電子装置において、
前記第1外部接続端子は、前記第1電子部品の第1面に形成されており、
前記中継部材は前記第1電子部品の前記第1面のうち、平面視で前記第1外部接続端子と重ならない領域に配置されている電子装置。 - 請求項1〜5のいずれか一つに記載の電子装置において、
表面に前記中継領域を有する中継部材を備え、
前記中継部材は前記第1外部接続端子と前記第2電子部品との間に配置されている電子装置。 - 請求項1〜5のいずれか一つに記載の電子装置において、
前記中継領域は、前記第1電子部品の第1面の一部である電子装置。 - 請求項1〜9のいずれか一つに記載の電子装置において、
前記第1電子部品はリードフレームであり、
前記第2電子部品は半導体チップである電子装置。 - 請求項1〜9のいずれか一つに記載の電子装置において、
前記第1電子部品はインターポーザであり、
前記第2電子部品は半導体チップである電子装置。 - 請求項1〜9のいずれか一つに記載の電子装置において、
前記第1電子部品は第1半導体チップであり、
前記第2電子部品は第2半導体チップであり、
前記第1半導体チップ及び前記第2半導体チップを実装する実装基板をさらに備え、
前記中継領域は、前記第1半導体チップと前記第2半導体チップの間に位置している電子装置。 - 請求項1〜12のいずれか一つに記載の電子装置において、
前記ワイヤはAu、Cu、又はAlであり、
前記金属は、少なくとも表面がAu、Al、Pd、Ag、Sn、Cu、又はこれらの何れかを主成分とする合金である電子装置。 - 第1電子部品の第1外部接続端子と、第2電子部品の第2外部接続端子とをワイヤで接続する際に用いられる中継部材であって、
少なくとも表面が絶縁性の基材と、
前記基材の表面の少なくとも一部に位置しており、互いに離間している複数の金属と、
を備える中継部材。 - 請求項14に記載の中継部材において、
前記複数の金属は、前記基材上にドット状に形成されたパターンである中継部材。 - 請求項14に記載の中継部材において、
前記基材内に分散された複数の前記金属の粒子を有しており、前記複数の粒子の少なくとも一部が前記基材の表面から露出している中継部材。 - 請求項16に記載の中継部材において、
前記複数の粒子のうち前記基材の表面から露出している部分に形成され、前記粒子を構成する金属よりも前記第1ワイヤ及び前記第2ワイヤと合金化しやすい金属からなる導体膜をさらに備える中継部材。 - 第1電子部品を実装する実装基板であって、
前記第1電子部品が実装される第1実装領域と、
平面視で前記第1実装領域とは異なる場所に設けられ、前記第1電子部品にワイヤを介して接続される接続端子が配置される端子領域と、
前記第1実装領域と前記端子領域との間に位置しており、表面に複数の金属が互いに絶縁した状態で設けられている中継領域と、
を備える実装基板。 - 請求項18に記載の実装基板において、
前記接続端子は、前記実装基板のうち前記端子領域に設けられている実装基板。 - 請求項18に記載の実装基板において、
前記端子領域は、第2電子部品が実装される第2実装領域であり、
前記接続端子は、前記第2電子部品が有する外部接続端子である実装基板。 - 第1外部接続端子を有する第1電子部品と、第2外部接続端子を有する第2電子部品とを、平面視で前記第1外部接続端子が前記第2電子部品と重ならないように配置する工程と、
前記第1外部接続端子と前記第2電子部品の間に、表面に複数の金属が互いに絶縁した状態で設けられている中継領域を設ける工程と、
第1ワイヤの一端を前記第1外部接続端子に接続し、第2ワイヤの一端を前記第2外部接続端子に接続し、前記第1ワイヤ及び前記第2ワイヤの少なくとも一方の他端を、前記中継領域に位置している少なくとも一つの前記金属に接合させ、かつ、前記第1ワイヤの前記他端及び前記第2ワイヤの前記他端を、前記中継領域において互いに接合させる工程と、
前記第1電子部品、前記第2電子部品、前記中継領域、前記第1ワイヤ、及び前記第2ワイヤを封止樹脂で封止する工程と、
を備える電子装置の製造方法。
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JPH02154435A (ja) * | 1988-12-06 | 1990-06-13 | Matsushita Electron Corp | 半導体装置 |
JPH03211740A (ja) * | 1990-01-16 | 1991-09-17 | Fujitsu Ltd | 半導体装置 |
JPH04306849A (ja) * | 1991-04-03 | 1992-10-29 | Fuji Xerox Co Ltd | 半導体装置 |
JPH065647A (ja) * | 1992-06-24 | 1994-01-14 | Nec Kyushu Ltd | 半導体装置 |
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JPH03167872A (ja) * | 1989-11-28 | 1991-07-19 | Seiko Epson Corp | 半導体装置用リードフレーム |
JPH0621134A (ja) | 1992-07-01 | 1994-01-28 | Seiko Epson Corp | 半導体装置およびその製造方法 |
JPH06326235A (ja) | 1993-05-11 | 1994-11-25 | Nec Kyushu Ltd | 半導体装置 |
KR100843137B1 (ko) * | 2004-12-27 | 2008-07-02 | 삼성전자주식회사 | 반도체 소자 패키지 |
JP4707548B2 (ja) | 2005-12-08 | 2011-06-22 | 富士通セミコンダクター株式会社 | 半導体装置、及び半導体装置の製造方法 |
JP2008034567A (ja) * | 2006-07-27 | 2008-02-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7888781B2 (en) * | 2008-08-27 | 2011-02-15 | Fairchild Semiconductor Corporation | Micro-layered lead frame semiconductor packages |
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JPS5598837A (en) * | 1979-01-19 | 1980-07-28 | Mitsubishi Electric Corp | Semiconductor device |
JPH02154435A (ja) * | 1988-12-06 | 1990-06-13 | Matsushita Electron Corp | 半導体装置 |
JPH03211740A (ja) * | 1990-01-16 | 1991-09-17 | Fujitsu Ltd | 半導体装置 |
JPH04306849A (ja) * | 1991-04-03 | 1992-10-29 | Fuji Xerox Co Ltd | 半導体装置 |
JPH065647A (ja) * | 1992-06-24 | 1994-01-14 | Nec Kyushu Ltd | 半導体装置 |
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JPWO2020162436A1 (ja) * | 2019-02-05 | 2021-12-16 | パナソニックIpマネジメント株式会社 | センサ装置 |
US11885621B2 (en) | 2019-02-05 | 2024-01-30 | Panasonic Intellectual Property Management Co., Ltd. | Sensor device |
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