JP2011175032A - 表示装置 - Google Patents
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- JP2011175032A JP2011175032A JP2010037720A JP2010037720A JP2011175032A JP 2011175032 A JP2011175032 A JP 2011175032A JP 2010037720 A JP2010037720 A JP 2010037720A JP 2010037720 A JP2010037720 A JP 2010037720A JP 2011175032 A JP2011175032 A JP 2011175032A
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- 230000009897 systematic effect Effects 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】互いに並行する第1及び第2のゲート配線と、前記第1のゲート配線の一方側に配置される第1の画素回路と、前記第2のゲート配線の他方側に配置される第2の画素回路と、を備える表示装置であって、前記第1の画素回路は、第1のトランジスタを備え、前記第1のトランジスタのゲート電極はゲート配線と導通し、前記第2の画素回路は、第2のトランジスタを備え、前記第2のトランジスのゲート電極は前記第2のゲート配線と導通し、前記第1のトランジスタのソース電極はゲート電極と平面的に重なり合う第1対向部を含み、前記第2のトランジスタのソース電極はゲート電極と平面的に重なり合うとともに、前記第1ソース電極対向部に沿って延伸する第2対向部を含む。
【選択図】図4A
Description
本発明の第1の実施形態に係る表示装置は、IPS(In-Plane Switching)方式のうちの一つの方式による液晶表示装置1である。図1は、本発明の当該実施形態に係る液晶表示装置1の全体斜視図である。図1に示すように、TFT基板102と、TFT基板102に対向し、カラーフィルタが設けられたフィルタ基板101と、両基板に挟まれた領域に封入された液晶材料と、TFT基板側に位置するバックライト103と、TFT基板102に様々な制御信号などを供給するフレキシブル基板(図示せず)を含んで構成される。TFT基板102は、ガラス基板などの透明基板の上にTFTなどが配置されている。
本発明の第2の実施射形態に係る表示装置は、第1の実施形態に係る表示装置と同様に、IPS方式のうち一つの方式による液晶表示装置1である。当該実施形態に係る液晶表示装置1の基本的な構成は、第1の実施形態に係る液晶表示装置1の構成と同じである。第2の実施形態に係る液晶表示装置1は、画素回路に備えられるTFT20の構造が、第1の実施形態に係る液晶表示装置1の構造と異なっている。
Claims (7)
- 互いに並行する第1及び第2のゲート配線と、
前記第1のゲート配線の一方側に配置される第1の画素回路と、
前記第2のゲート配線の他方側に配置される第2の画素回路と、を備え、
前記第1の画素回路は、第1のトランジスタを備えるとともに、前記第1のトランジスタのソース電極はソース電極層に形成され、前記第1のトランジスタのゲート電極はゲート電極層に形成されるとともに前記第1のゲート配線と導通し、
前記第2の画素回路は、第2のトランジスタを備えるとともに、前記第2のトランジスタのソース電極は前記ソース電極層に形成され、前記第2のトランジスタのゲート電極は前記ゲート電極層に形成されるとともに前記第2のゲート配線と導通し、
前記第1のトランジスタのソース電極は前記第1のトランジスタのゲート電極と平面的に重なり合う第1ソース電極対向部を含み、
前記第2のトランジスタのソース電極は前記第2のトランジスタのゲート電極と平面的に重なり合うとともに、前記第1ソース電極対向部に沿って延伸する第2ソース電極対向部を含む、
ことを特徴とする表示装置。 - 前記第1ソース電極対向部は、所定の方向に延伸している、
ことを特徴とする、請求項1に記載の表示装置。 - 前記第1ソース電極対向部は、前記第1のゲート配線が並行する方向に延伸する、
ことを特徴とする、請求項1に記載の表示装置。 - 前記第1ソース電極対向部の延伸方向の長さは、前記第1ソース電極対向部の幅より長く、
前記第2ソース電極対向部の延伸方向の長さは、前記第2ソース電極対向部の幅より長い、
ことを特徴とする、請求項3に記載の表示装置。 - 前記第1のトランジスタのドレイン電極は、前記第1のトランジスタのゲート電極と平面的に重なり合うとともに、前記第1ソース電極対向部の延伸方向と逆方向に延伸する第1ドレイン電極対向部を含み、
前記第2のトランジスタのドレイン電極は、前記第2のトランジスタのゲート電極と平面的に重なり合うとともに、前記第1ドレイン対向部に沿って延伸する第2ドレイン電極対向部を含む、
ことを特徴とする請求項1乃至請求項4のいずれかに記載の表示装置。 - 前記第1のトランジスタのドレイン電極と導通するデータ信号配線を、さらに備え、
前記データ信号配線は、分岐して、前記第1のトランジスタのドレイン電極へ延びる、
ことを特徴とする、請求項5に記載の表示装置。 - 前記第1のトランジスタのソース電極に対する前記第1のドレイン電極の配置に応じて、前記第2のトランジスタのドレイン電極は、前記第2のトランジスタのソース電極に対して配置される、
ことを特徴とする請求項5に記載の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010037720A JP2011175032A (ja) | 2010-02-23 | 2010-02-23 | 表示装置 |
US13/031,957 US8378350B2 (en) | 2010-02-23 | 2011-02-22 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010037720A JP2011175032A (ja) | 2010-02-23 | 2010-02-23 | 表示装置 |
Publications (1)
Publication Number | Publication Date |
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JP2011175032A true JP2011175032A (ja) | 2011-09-08 |
Family
ID=44475760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010037720A Pending JP2011175032A (ja) | 2010-02-23 | 2010-02-23 | 表示装置 |
Country Status (2)
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US (1) | US8378350B2 (ja) |
JP (1) | JP2011175032A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI561905B (en) | 2016-01-04 | 2016-12-11 | Au Optronics Corp | Pixel structure |
CN109087927B (zh) * | 2018-08-15 | 2021-01-29 | 京东方科技集团股份有限公司 | 阵列基板、x射线探测面板和x射线探测装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6468968A (en) * | 1987-09-09 | 1989-03-15 | Seiko Epson Corp | Thin film transistor |
JPH0627488A (ja) * | 1992-07-09 | 1994-02-04 | Fujitsu Ltd | アクティブマトリクス型表示装置 |
JPH08328038A (ja) * | 1995-06-01 | 1996-12-13 | Casio Comput Co Ltd | アクティブマトリクス表示装置 |
JPH10282527A (ja) * | 1997-04-11 | 1998-10-23 | Casio Comput Co Ltd | 液晶表示装置 |
JPH11344724A (ja) * | 1998-06-02 | 1999-12-14 | Furontec:Kk | アクティブマトリクス型液晶表示装置およびそれに用いる基板 |
JP2008249895A (ja) * | 2007-03-29 | 2008-10-16 | Casio Comput Co Ltd | 表示パネル及びそれを用いたマトリックス表示装置 |
JP2010014828A (ja) * | 2008-07-02 | 2010-01-21 | Epson Imaging Devices Corp | 表示装置 |
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KR970009405B1 (en) * | 1991-10-05 | 1997-06-13 | Fujitsu Ltd | Active matrix type display device |
JP2797972B2 (ja) * | 1994-06-28 | 1998-09-17 | 日本電気株式会社 | アクティブマトリクス型液晶表示装置 |
KR100468234B1 (ko) * | 1996-05-08 | 2005-06-22 | 가부시키가이샤 니콘 | 노광방법,노광장치및디스크 |
JP4966444B2 (ja) * | 2000-11-10 | 2012-07-04 | ゲットナー・ファンデーション・エルエルシー | Tft液晶表示装置 |
JP4604440B2 (ja) * | 2002-02-22 | 2011-01-05 | 日本電気株式会社 | チャネルエッチ型薄膜トランジスタ |
KR100887997B1 (ko) * | 2002-12-26 | 2009-03-09 | 엘지디스플레이 주식회사 | 기생 용량 편차가 최소화된 액정 표시 장치용 박막트랜지스터 |
KR20080086730A (ko) * | 2007-03-23 | 2008-09-26 | 삼성전자주식회사 | 표시 기판 및 이를 갖는 표시 장치 |
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2010
- 2010-02-23 JP JP2010037720A patent/JP2011175032A/ja active Pending
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2011
- 2011-02-22 US US13/031,957 patent/US8378350B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6468968A (en) * | 1987-09-09 | 1989-03-15 | Seiko Epson Corp | Thin film transistor |
JPH0627488A (ja) * | 1992-07-09 | 1994-02-04 | Fujitsu Ltd | アクティブマトリクス型表示装置 |
JPH08328038A (ja) * | 1995-06-01 | 1996-12-13 | Casio Comput Co Ltd | アクティブマトリクス表示装置 |
JPH10282527A (ja) * | 1997-04-11 | 1998-10-23 | Casio Comput Co Ltd | 液晶表示装置 |
JPH11344724A (ja) * | 1998-06-02 | 1999-12-14 | Furontec:Kk | アクティブマトリクス型液晶表示装置およびそれに用いる基板 |
JP2008249895A (ja) * | 2007-03-29 | 2008-10-16 | Casio Comput Co Ltd | 表示パネル及びそれを用いたマトリックス表示装置 |
JP2010014828A (ja) * | 2008-07-02 | 2010-01-21 | Epson Imaging Devices Corp | 表示装置 |
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US20110204372A1 (en) | 2011-08-25 |
US8378350B2 (en) | 2013-02-19 |
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