JP2011162879A5 - - Google Patents

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JP2011162879A5
JP2011162879A5 JP2011023259A JP2011023259A JP2011162879A5 JP 2011162879 A5 JP2011162879 A5 JP 2011162879A5 JP 2011023259 A JP2011023259 A JP 2011023259A JP 2011023259 A JP2011023259 A JP 2011023259A JP 2011162879 A5 JP2011162879 A5 JP 2011162879A5
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metal
group
mixture
mixtures
tantalum
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Claims (16)

− 白金、ロジウム、金、パラジウム、銀、銅、イリジウム、ルテニウム、オスミウム、レニウム及びそれらの混合物から成るA群から選択された金属又は金属混合物からのコア(1)を包含し、
− その際、前記コアは、ケイ素、ゲルマニウム、錫、ホウ素、アルミニウム、ガリウム、インジウム、ベリリウム、マグネシウム、スカンジウム、イットリウム、ランタン、セリウム、ランタニド、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム、モリブデン、タングステン、マンガン、鉄、コバルト、ニッケル、亜鉛及びそれらの混合物から成るB群から選択された金属又は金属混合物の酸化物(2a、2b、2c)により少なくとも部分的に取り囲まれている導電性材料において、前記コア(1)が、100nm以下の平均粒径を有することを特徴とする導電性材料。
-Including a core (1) from a metal or metal mixture selected from the group A consisting of platinum, rhodium, gold, palladium, silver, copper, iridium, ruthenium, osmium, rhenium and mixtures thereof;
The core is made of silicon, germanium, tin, boron, aluminum, gallium, indium, beryllium, magnesium, scandium, yttrium, lanthanum, cerium, lanthanide, titanium, zirconium, hafnium, niobium, tantalum, chromium, molybdenum, In a conductive material at least partly surrounded by an oxide (2a, 2b, 2c) of a metal or metal mixture selected from the group B consisting of tungsten, manganese, iron, cobalt, nickel, zinc and mixtures thereof The said core (1) has an average particle diameter of 100 nm or less, The electroconductive material characterized by the above-mentioned.
前記材料が、互いに結合された粒子(3)と、前記粒子間にある細孔(4)とから構成されており、その際、前記粒子(3)が、そのつどA群の金属又は金属混合物からのコア(1)を有し、前記コアが、少なくとも部分的にB群の金属又は金属混合物の酸化物層(2b、2c)で取り囲まれていることを特徴とする、請求項1記載の材料。   The material is composed of particles (3) bonded to each other and pores (4) between the particles, wherein the particles (3) are each a group A metal or metal mixture 2. The core according to claim 1, characterized in that the core is at least partially surrounded by an oxide layer (2 b, 2 c) of a group B metal or metal mixture. material. 前記粒子(3)が、走査電子顕微鏡法によって測定して、≧0.5nm〜≦110nmの平均粒径を有することを特徴とする、請求項2記載の材料。   3. Material according to claim 2, characterized in that the particles (3) have an average particle size of ≧ 0.5 nm to ≦ 110 nm as measured by scanning electron microscopy. 前記粒子(3)間にある細孔(4)が、走査電子顕微鏡法によって測定して、≧0.1nm〜≦50nmの平均孔径を有することを特徴とする、請求項2又は3記載の材料。   4. Material according to claim 2 or 3, characterized in that the pores (4) between the particles (3) have an average pore size of ≧ 0.1 nm to ≦ 50 nm as measured by scanning electron microscopy. . 前記材料が、前記材料中の金属原子の全体数に対して:
− A群の金属を≧65原子パーセント〜≦97原子パーセント及び
− B群の金属を≧3原子パーセント〜≦35原子パーセント
包含し、その際、A群及びB群を合わせた金属原子の合計が100原子パーセントになることを特徴とする、請求項1から4までのいずれか1項記載の材料。
For the total number of metal atoms in the material:
-Group A metals ≧ 65 atomic percent to ≦ 97 atomic percent; and Group B metals ≧ 3 atomic percent to ≦ 35 atomic percent, where the sum of the metal atoms of Group A and Group B together is 5. A material according to claim 1, characterized in that it is 100 atomic percent.
− 前記A群が、白金、ロジウム、レニウム又はそれらの混合物から成ることを特徴とする、請求項1から5までのいずれか1項記載の材料。   6. Material according to any one of claims 1 to 5, characterized in that the group A consists of platinum, rhodium, rhenium or mixtures thereof. − 前記B群が、アルミニウム、セリウム、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム又はそれらの混合物から成ることを特徴とする、請求項1から6までのいずれか1項記載の材料。   The material according to any one of claims 1 to 6, characterized in that said group B consists of aluminum, cerium, titanium, zirconium, hafnium, niobium, tantalum, chromium or mixtures thereof. − 前記B群が、イットリウム、セリウム、チタン、ジルコニウム、タンタル又はそれらの混合物から成ることを特徴とする、請求項1から6までのいずれか1項記載の材料。   The material according to any one of claims 1 to 6, characterized in that said group B consists of yttrium, cerium, titanium, zirconium, tantalum or mixtures thereof. 以下の方法工程
a1)
− 白金、ロジウム、金、パラジウム、銀、銅、イリジウム、ルテニウム、オスミウム、レニウム及びそれらの混合物から成るA群から選択された金属又は金属混合物、及び
ケイ素、ゲルマニウム、錫、ホウ素、アルミニウム、ガリウム、インジウム、ベリリウム、マグネシウム、スカンジウム、イットリウム、ランタン、セリウム、ランタニド、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム、モリブデン、タングステン、マンガン、鉄、コバルト、ニッケル、亜鉛及びそれらの混合物から成るB群から選択された金属又は金属混合物
を包含する、ナノ粒子を準備する工程、及び/又は
a2)
− 白金、ロジウム、金、パラジウム、銀、銅、イリジウム、ルテニウム、オスミウム、レニウム及びそれらの混合物から成るA群から選択された金属又は金属混合物を包含する、ナノ粒子及び
− ケイ素、ゲルマニウム、錫、ホウ素、アルミニウム、ガリウム、インジウム、ベリリウム、マグネシウム、スカンジウム、イットリウム、ランタン、セリウム、ランタニド、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム、モリブデン、タングステン、マンガン、鉄、コバルト、ニッケル、亜鉛及びそれらの混合物から成るB群から選択された金属又は金属混合物、及び/又は
− ケイ素、ゲルマニウム、錫、ホウ素、アルミニウム、ガリウム、インジウム、ベリリウム、マグネシウム、スカンジウム、イットリウム、ランタン、セリウム、ランタニド、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム、モリブデン、タングステン、マンガン、鉄、コバルト、ニッケル、亜鉛及びそれらの混合物から成るB群から選択された金属又は金属混合物の少なくとも1つの化合物
からの均一な混合物を準備する工程、及び
b)方法工程a1)又はa2)からの材料を、少なくとも200℃で10分間、酸化性のガス又はガス混合物で処理する工程を包含する、導電性材料の製造法。
The following method steps a1)
-A metal or metal mixture selected from the group A consisting of platinum, rhodium, gold, palladium, silver, copper, iridium, ruthenium, osmium, rhenium and mixtures thereof; and silicon, germanium, tin, boron, aluminum, gallium, From group B consisting of indium, beryllium, magnesium, scandium, yttrium, lanthanum, cerium, lanthanide, titanium, zirconium, hafnium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel, zinc and mixtures thereof Providing a nanoparticle comprising a selected metal or metal mixture, and / or a2)
-A nanoparticle comprising a metal or metal mixture selected from the group A consisting of platinum, rhodium, gold, palladium, silver, copper, iridium, ruthenium, osmium, rhenium and mixtures thereof;-silicon, germanium, tin, Boron, aluminum, gallium, indium, beryllium, magnesium, scandium, yttrium, lanthanum, cerium, lanthanide, titanium, zirconium, hafnium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel, zinc and their A metal selected from the group B consisting of a mixture or a metal mixture, and / or silicon, germanium, tin, boron, aluminum, gallium, indium, beryllium, magnesium, scandium, yttrium, lanthanum Cerium, lanthanides, titanium, zirconium, hafnium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, iron, cobalt, nickel, zinc and at least one compound of the selected metal or metal mixture Group B mixtures thereof A conductive material comprising the steps of: preparing a homogeneous mixture from: b) treating the material from method step a1) or a2) with an oxidizing gas or gas mixture at least at 200 ° C. for 10 minutes Manufacturing method.
前記方法工程a2)で、前記B群の金属又は金属混合物の化合物を溶媒に溶解して準備することを特徴とする、請求項9記載の方法。   10. The method according to claim 9, wherein in the method step a2), the group B metal or metal mixture compound is prepared by dissolving in a solvent. − 前記方法工程a1)で、前記B群の金属又は金属混合物を溶媒中にナノ粒子の懸濁液の形で準備し、及び/又は
− 前記方法工程a2)で、前記B群の金属又は金属混合物を溶媒中にナノ粒子の懸濁液の形で準備し、及び/又は
− 前記方法工程a2)で、前記B群の金属又は金属混合物の化合物を溶媒中にナノ粒子の懸濁液の形で準備することを特徴とする、請求項9又は10記載の方法。
In step a1) the group B metal or metal mixture is prepared in the form of a suspension of nanoparticles in a solvent and / or in step a2) the group B metal or metal the mixture prepared in the form of a suspension of nanoparticles in a solvent, and / or - the method in step a2), a suspension form of the nanoparticulate compound in a solvent of the group B metal or metal mixture A method according to claim 9 or 10, characterized in that it is prepared by:
前記方法工程b)の前に、方法工程b03):前記材料を少なくとも350℃で少なくとも20分間、非酸化性のガス又はガス混合物で処理する工程を包含することを特徴とする、請求項9から11までのいずれか1項記載の方法。   Before the method step b), the method step b03): including the step of treating the material with a non-oxidizing gas or gas mixture at least at 350 ° C. for at least 20 minutes. The method according to any one of 11 to 11. − 前記A群が、白金、ロジウム、レニウム又はそれらの混合物から成ることを特徴とする、請求項9から12までのいずれか1項記載の方法。   13. A method according to any one of claims 9 to 12, characterized in that the group A consists of platinum, rhodium, rhenium or mixtures thereof. − 前記B群が、アルミニウム、セリウム、チタン、ジルコニウム、ハフニウム、ニオブ、タンタル、クロム又はそれらの混合物から成ることを特徴とする、請求項9から13までのいずれか1項記載の方法。   The method according to any one of claims 9 to 13, characterized in that said group B consists of aluminum, cerium, titanium, zirconium, hafnium, niobium, tantalum, chromium or mixtures thereof. − 前記B群が、イットリウム、セリウム、チタン、ジルコニウム、タンタル又はそれらの混合物から成ることを特徴とする、請求項9から13までのいずれか1項記載の方法。   The method according to any one of claims 9 to 13, characterized in that said group B consists of yttrium, cerium, titanium, zirconium, tantalum or mixtures thereof. 前記B群の金属又は金属混合物の化合物が
− 前記B群の金属又は金属混合物の酸化物、硝酸塩及び/又はハロゲン化物、及び/又は
− 前記B群の金属又は金属混合物のアルコレート又は有機酸と前記B群の金属又は金属混合物との塩であることを特徴とする、請求項9から15までのいずれか1項記載の方法。
The group B metal or metal mixture compound is an oxide, nitrate and / or halide of the group B metal or metal mixture, and / or an alcoholate or organic acid of the group B metal or metal mixture, and / or 16. A process according to any one of claims 9 to 15, characterized in that it is a salt with said group B metal or metal mixture.
JP2011023259A 2010-02-04 2011-02-04 Conductive material Pending JP2011162879A (en)

Applications Claiming Priority (2)

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DE102010001567A DE102010001567A1 (en) 2010-02-04 2010-02-04 Electrically conductive material useful as electrode material, conductor material, chemosensitive, gas sensitive material for a sensor, comprises a core made from platinum, rhodium and/or ruthenium, which is surrounded by oxide of cerium
DE102010001567.9 2010-02-04

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