JP2011157559A - 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス - Google Patents
半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス Download PDFInfo
- Publication number
- JP2011157559A JP2011157559A JP2011090086A JP2011090086A JP2011157559A JP 2011157559 A JP2011157559 A JP 2011157559A JP 2011090086 A JP2011090086 A JP 2011090086A JP 2011090086 A JP2011090086 A JP 2011090086A JP 2011157559 A JP2011157559 A JP 2011157559A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- curable
- adhesive composition
- composition
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 title claims abstract description 105
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 105
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000000203 mixture Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 36
- 239000000945 filler Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 230000009477 glass transition Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 57
- 229920001721 polyimide Polymers 0.000 claims description 15
- 229920001296 polysiloxane Polymers 0.000 claims description 12
- 239000004642 Polyimide Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007259 addition reaction Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229920000307 polymer substrate Polymers 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000006482 condensation reaction Methods 0.000 claims description 2
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 description 36
- 239000011324 bead Substances 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 238000007639 printing Methods 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 239000008393 encapsulating agent Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000013536 elastomeric material Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- -1 polydimethylsiloxane Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N C1CCCCC1 Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- YWXYYJSYQOXTPL-SLPGGIOYSA-N isosorbide mononitrate Chemical compound [O-][N+](=O)O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 YWXYYJSYQOXTPL-SLPGGIOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2463/00—Presence of epoxy resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06575—Auxiliary carrier between devices, the carrier having no electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
- H01L2225/06586—Housing with external bump or bump-like connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
【解決手段】ダイ取付接着剤は、硬化性高分子基材と共に、前記高分子基材中に含まれる、接着剤によって接合される基板間に平坦な接着剤層厚さを与えるのに十分な量で組成物中に存在する、平均粒径が1μm〜1000μmであり、短軸に対する長軸のアスペクト比が約1.0〜1.5である無機絶縁体粒子と、前記硬化性高分子基材の量を基準にして少なくとも50質量%を超える量であって、5℃/分の昇温速度で求めた場合に−55℃から+200℃の間で任意のガラス転移温度前後で240μm/m/℃未満の任意の線熱膨張係数を有する接着剤を得るのに十分な量で存在する少なくとも1種の低熱膨張係数充填剤とを含み、10μm〜100μmの範囲内のサイズを有する前記低熱膨張係数充填剤が0.1質量%未満の量で存在することを特徴とする硬化性接着剤組成物である。
【選択図】図1
Description
この実施例は、本発明に係る組成物のうちの一つの調製を示すものである。
a.99.66部の、1分子当たり平均5個のHMeSiO2/2 単位と3個のMeSiO2/2 単位を含み、4.8×10-3Pa・sの粘度を有するトリメチルシロキシ末端ジメチルメチルハイドロジェンシロキサン、および
b.1.98部の2−フェニル−3−ブチン−2−オール。
この実施例の接着剤組成物は、次の成分からなる。
(c)466.39部の、{(CH3)2CH2=CHSiO}1/2単位、{(CH3)3SiO}1/2単位およびSiO4/2単位から本質的になり、SiO4/2に対する全トリオルガノシロキサン単位のモル比が約0.7:1である樹脂、
(d)88.83部の、830の平均重合度及び55Pa・sの粘度を有するジメチルビニルシロキシ末端ポリジメチルシロキサン、
(e)1027.58部の、434の平均重合度及び2Pa・sの粘度を有するジメチルビニルシロキシ末端ポリジメチルシロキサン、
(f)18.6部の、45nmの平均粒度を有するカーボンブラック粉末、
(g)92.4部の上記ブレンドA、
(h)180部の、ポリジメチルシロキサン流体で処理されたヒュームドシリカ、
(i)3600部の、1.0〜1.5のアスペクト比および5μmの平均粒度を有する球状溶融シリカ、
(j)450部の、125ミクロンの篩と106ミクロンの篩の間で集められた0.10mmの平均粒度及び1.0〜1.5のアスペクト比を有する球状溶融シリカ、
(k)76.2部の、1,3−ジエテニル−1,1,3,3−テトラメチルジシロキサンの白金錯体。
次の実施例は、本発明の方法を用いて従来技術のデバイスパッケージング法から除去することができるけれども、パッケージされた部品に優れた信頼性を与える重要な加工ステップを示すものである。
Claims (14)
- 硬化性高分子基材と共に、前記高分子基材中に含まれる、
(I)接着剤によって接合される基板間に平坦な接着剤層厚さを与えるのに十分な量で組成物中に存在する、平均粒度が1μm〜1000μmであり、短軸に対する長軸の比が約1.0〜1.5である無機絶縁体粒子と、
(II)前記硬化性高分子基材の質量を基準にして少なくとも50質量%を超える量の、10μm未満の平均粒度を有する少なくとも1種の低熱膨張係数充填剤、
とを含み、10μm〜100μmの範囲内のサイズを有する前記低熱膨張係数充填剤が接着剤組成物中に存在する低熱膨張係数充填剤の全質量を基準として0.1質量%未満の量で存在することを特徴とする硬化性接着剤組成物。 - 前記無機絶縁体粒子が溶融シリカ粒子である請求項1に記載の硬化性接着剤組成物。
- 前記無機絶縁体粒子がアルミナ粒子である請求項1に記載の硬化性接着剤組成物。
- 少なくとも2個の個別の基板が請求項1に記載の接着剤組成物により接合されて結合されている半導体デバイス。
- 少なくとも2個の個別の基板を接合する方法であって、
(I)請求項1に記載の接着剤組成物を前記個別の基板のうちの少なくとも1個の少なくとも1つの表面に適用し、
(II)(I)の基板の接着剤処理された側に別の個別の基板を取り付けてそれらの積層体を形成し、
(III)前記基板のそれぞれが前記接着剤組成物の最も大きい有機絶縁体粒子と接触するまで前記積層体に圧力を加えてそれらの間に接着剤を分散させ、その後、
(IV)前記接着剤組成物を硬化させること、
を含む方法。 - さらにステップ(III)において熱を加える請求項5に記載の方法。
- 前記2個の個別の基板が半導体ダイとその半導体ダイ用の取付基板である請求項4に記載の半導体デバイス。
- 前記2個の個別の基板が半導体ダイとその半導体ダイ用の取付基板である請求項5に記載の方法。
- 前記接着剤の基材が、
(a)硬化性シリコーン組成物、
(b)硬化性エポキシ組成物、
(c)硬化性ポリイミド組成物、および
(d)硬化性アクリル組成物、
から本質的になる群から選択される請求項1に記載の接着剤組成物。 - (ii)縮合反応、
(iii)付加反応、
(iv)紫外線開始輻射線反応、および
(v)遊離基開始反応、
から本質的になる群から選択される硬化機構を有する請求項9に記載の接着剤組成物。 - 前記接着剤の基材がシリコーン組成物である請求項9に記載の接着剤組成物。
- 前記シリコーン組成物が付加反応により硬化可能なシリコーン組成物である請求項11に記載の接着剤組成物。
- 前記接着剤の基材がエポキシ組成物である請求項9に記載の接着剤組成物。
- 絶縁性粒子が、5℃/分の昇温速度で求めた場合に−55℃から+200℃の間で任意のガラス転移温度前後で240μm/m/℃未満の任意の線熱膨張係数を有する接着剤を得るのに十分な量で存在する接着剤組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/954,528 | 2001-09-17 | ||
US09/954,528 US6784555B2 (en) | 2001-09-17 | 2001-09-17 | Die attach adhesives for semiconductor applications utilizing a polymeric base material with inorganic insulator particles of various sizes |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003529862A Division JP2005503467A (ja) | 2001-09-17 | 2002-08-23 | 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011157559A true JP2011157559A (ja) | 2011-08-18 |
Family
ID=25495559
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003529862A Withdrawn JP2005503467A (ja) | 2001-09-17 | 2002-08-23 | 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス |
JP2011090086A Pending JP2011157559A (ja) | 2001-09-17 | 2011-04-14 | 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003529862A Withdrawn JP2005503467A (ja) | 2001-09-17 | 2002-08-23 | 半導体用途用のダイ取付接着剤、半導体デバイスを製造する方法、およびそのような方法により製造される半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US6784555B2 (ja) |
JP (2) | JP2005503467A (ja) |
KR (1) | KR100880090B1 (ja) |
DE (1) | DE10297225B4 (ja) |
TW (1) | TW569363B (ja) |
WO (1) | WO2003025080A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018159309A1 (ja) * | 2017-03-03 | 2018-09-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7238550B2 (en) * | 2002-02-26 | 2007-07-03 | Tandon Group Ltd. | Methods and apparatus for fabricating Chip-on-Board modules |
US6885093B2 (en) * | 2002-02-28 | 2005-04-26 | Freescale Semiconductor, Inc. | Stacked die semiconductor device |
AU2003298595A1 (en) * | 2002-10-08 | 2004-05-04 | Chippac, Inc. | Semiconductor stacked multi-package module having inverted second package |
US20050221722A1 (en) * | 2004-03-31 | 2005-10-06 | Cheong Yew W | Wafer grinding using an adhesive gel material |
US7504156B2 (en) * | 2004-04-15 | 2009-03-17 | Avery Dennison Corporation | Dew resistant coatings |
US20050260789A1 (en) * | 2004-05-21 | 2005-11-24 | Texas Instruments Incorporated | Method and system for applying an adhesive substance on an electronic device |
US8552551B2 (en) * | 2004-05-24 | 2013-10-08 | Chippac, Inc. | Adhesive/spacer island structure for stacking over wire bonded die |
US20050258527A1 (en) * | 2004-05-24 | 2005-11-24 | Chippac, Inc. | Adhesive/spacer island structure for multiple die package |
US7179558B2 (en) * | 2004-07-15 | 2007-02-20 | Delphi Technologies, Inc. | Braze alloy containing particulate material |
DE102005015036B4 (de) * | 2004-07-19 | 2008-08-28 | Qimonda Ag | Verfahren zur Montage eines Chips auf einer Unterlage |
US7218007B2 (en) * | 2004-09-28 | 2007-05-15 | Intel Corporation | Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices |
US7563691B2 (en) | 2004-10-29 | 2009-07-21 | Hewlett-Packard Development Company, L.P. | Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding |
JP4383324B2 (ja) * | 2004-11-10 | 2009-12-16 | Necエレクトロニクス株式会社 | 半導体装置 |
JP4704084B2 (ja) * | 2005-03-29 | 2011-06-15 | 三菱電機株式会社 | 半導体装置 |
JP4648099B2 (ja) * | 2005-06-07 | 2011-03-09 | 信越化学工業株式会社 | ダイボンディング用シリコーン樹脂組成物 |
US7118940B1 (en) * | 2005-08-05 | 2006-10-10 | Delphi Technologies, Inc. | Method of fabricating an electronic package having underfill standoff |
US20070152314A1 (en) * | 2005-12-30 | 2007-07-05 | Intel Corporation | Low stress stacked die packages |
KR100839780B1 (ko) * | 2006-01-18 | 2008-06-19 | 주식회사 엘지화학 | 유연성 기판 반송용 점착제 |
US20070232055A1 (en) * | 2006-03-31 | 2007-10-04 | Richard Earl Corley | Methods and Apparatuses for Applying a Protective Material to an Interconnect Associated with a Component |
DE102006043215A1 (de) * | 2006-09-11 | 2008-03-27 | Qimonda Ag | Verfahren zur koplanaren Montage eines Chips auf einer Unterlage und nach diesem Verfahren hergestellte Anordnung |
DE102006053916B3 (de) * | 2006-11-15 | 2008-06-19 | Qimonda Ag | Verfahren zum Herstellen einer Klebefläche auf einer Oberfläche eines Die-Trägers |
US20090050266A1 (en) * | 2007-08-21 | 2009-02-26 | Kang Yang | Crosslinked polymeric materials as filler and spacers in adhesives |
US20090078458A1 (en) * | 2007-09-21 | 2009-03-26 | Ricoh Company, Ltd. | Paste composition, insulating film, multilayer interconnection structure, printed-circuit board, image display device, and manufacturing method of paste composition |
KR100891537B1 (ko) * | 2007-12-13 | 2009-04-03 | 주식회사 하이닉스반도체 | 반도체 패키지용 기판 및 이를 갖는 반도체 패키지 |
JP4697243B2 (ja) * | 2008-02-22 | 2011-06-08 | セイコーエプソン株式会社 | 接合体および接合方法 |
EP2274162A1 (en) * | 2008-04-08 | 2011-01-19 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Assemblies and methods for reducing warp and bow of a flexible substrate during semiconductor processing |
US7877875B2 (en) * | 2008-08-19 | 2011-02-01 | Silverbrook Research Pty Ltd | Method for connecting a flexible printed circuit board (PCB) to a printhead assembly |
US8296933B2 (en) * | 2008-08-19 | 2012-10-30 | Zamtec Limited | Fastening apparatus with authentication system |
US8020281B2 (en) * | 2008-08-19 | 2011-09-20 | Silverbrook Research Pty Ltd | Printed circuit board bonding device |
TWI522423B (zh) | 2010-08-31 | 2016-02-21 | 道康寧東麗股份有限公司 | 聚矽氧烷組合物及其硬化物 |
US9457572B2 (en) | 2010-11-08 | 2016-10-04 | Konica Minolta, Inc. | Inkjet head and method for producing inkjet head |
EP2882821B1 (en) | 2012-07-30 | 2020-06-03 | Dow Silicones Corporation | Thermally conductive condensation reaction curable polyorganosiloxane composition and methods for the preparation and use of the composition |
EP3049481A4 (en) * | 2013-09-27 | 2017-05-31 | Saint-Gobain Performance Plastics Corporation | A silicone article, a tube and method of forming an article |
US9560737B2 (en) | 2015-03-04 | 2017-01-31 | International Business Machines Corporation | Electronic package with heat transfer element(s) |
US10426037B2 (en) | 2015-07-15 | 2019-09-24 | International Business Machines Corporation | Circuitized structure with 3-dimensional configuration |
US9894749B2 (en) | 2015-09-25 | 2018-02-13 | International Business Machines Corporation | Tamper-respondent assemblies with bond protection |
US9924591B2 (en) | 2015-09-25 | 2018-03-20 | International Business Machines Corporation | Tamper-respondent assemblies |
US10175064B2 (en) | 2015-09-25 | 2019-01-08 | International Business Machines Corporation | Circuit boards and electronic packages with embedded tamper-respondent sensor |
US9911012B2 (en) | 2015-09-25 | 2018-03-06 | International Business Machines Corporation | Overlapping, discrete tamper-respondent sensors |
US10172239B2 (en) | 2015-09-25 | 2019-01-01 | International Business Machines Corporation | Tamper-respondent sensors with formed flexible layer(s) |
US9591776B1 (en) | 2015-09-25 | 2017-03-07 | International Business Machines Corporation | Enclosure with inner tamper-respondent sensor(s) |
US9578764B1 (en) | 2015-09-25 | 2017-02-21 | International Business Machines Corporation | Enclosure with inner tamper-respondent sensor(s) and physical security element(s) |
US10098235B2 (en) | 2015-09-25 | 2018-10-09 | International Business Machines Corporation | Tamper-respondent assemblies with region(s) of increased susceptibility to damage |
US10143090B2 (en) | 2015-10-19 | 2018-11-27 | International Business Machines Corporation | Circuit layouts of tamper-respondent sensors |
US9978231B2 (en) | 2015-10-21 | 2018-05-22 | International Business Machines Corporation | Tamper-respondent assembly with protective wrap(s) over tamper-respondent sensor(s) |
US9913389B2 (en) | 2015-12-01 | 2018-03-06 | International Business Corporation Corporation | Tamper-respondent assembly with vent structure |
US9555606B1 (en) | 2015-12-09 | 2017-01-31 | International Business Machines Corporation | Applying pressure to adhesive using CTE mismatch between components |
US10327343B2 (en) | 2015-12-09 | 2019-06-18 | International Business Machines Corporation | Applying pressure to adhesive using CTE mismatch between components |
US9554477B1 (en) | 2015-12-18 | 2017-01-24 | International Business Machines Corporation | Tamper-respondent assemblies with enclosure-to-board protection |
DE102016202174A1 (de) * | 2016-02-12 | 2017-08-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Klebeverfahren zum Verbinden zweier Wafer |
US9916744B2 (en) | 2016-02-25 | 2018-03-13 | International Business Machines Corporation | Multi-layer stack with embedded tamper-detect protection |
US9904811B2 (en) | 2016-04-27 | 2018-02-27 | International Business Machines Corporation | Tamper-proof electronic packages with two-phase dielectric fluid |
US9881880B2 (en) | 2016-05-13 | 2018-01-30 | International Business Machines Corporation | Tamper-proof electronic packages with stressed glass component substrate(s) |
US9913370B2 (en) | 2016-05-13 | 2018-03-06 | International Business Machines Corporation | Tamper-proof electronic packages formed with stressed glass |
US9858776B1 (en) | 2016-06-28 | 2018-01-02 | International Business Machines Corporation | Tamper-respondent assembly with nonlinearity monitoring |
CN109564903B (zh) * | 2016-08-10 | 2022-11-15 | 松下知识产权经营株式会社 | 密封用丙烯酸类组合物、片材、层叠片、固化物、半导体装置及半导体装置的制造方法 |
US10321589B2 (en) | 2016-09-19 | 2019-06-11 | International Business Machines Corporation | Tamper-respondent assembly with sensor connection adapter |
US10271424B2 (en) | 2016-09-26 | 2019-04-23 | International Business Machines Corporation | Tamper-respondent assemblies with in situ vent structure(s) |
US10299372B2 (en) | 2016-09-26 | 2019-05-21 | International Business Machines Corporation | Vented tamper-respondent assemblies |
US9999124B2 (en) | 2016-11-02 | 2018-06-12 | International Business Machines Corporation | Tamper-respondent assemblies with trace regions of increased susceptibility to breaking |
US10327329B2 (en) | 2017-02-13 | 2019-06-18 | International Business Machines Corporation | Tamper-respondent assembly with flexible tamper-detect sensor(s) overlying in-situ-formed tamper-detect sensor |
US10325863B2 (en) * | 2017-02-28 | 2019-06-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing same |
US10306753B1 (en) | 2018-02-22 | 2019-05-28 | International Business Machines Corporation | Enclosure-to-board interface with tamper-detect circuit(s) |
US11122682B2 (en) | 2018-04-04 | 2021-09-14 | International Business Machines Corporation | Tamper-respondent sensors with liquid crystal polymer layers |
US10600937B1 (en) | 2018-09-17 | 2020-03-24 | Lumileds Holding B.V. | Precise bondline control between LED components |
CN115247038A (zh) * | 2021-04-26 | 2022-10-28 | 翌骅实业股份有限公司 | 粘着复合物及其使用方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63251466A (ja) * | 1987-04-06 | 1988-10-18 | Shin Etsu Chem Co Ltd | 熱伝導性液状シリコ−ンゴム組成物 |
JPH02173073A (ja) * | 1988-12-27 | 1990-07-04 | Sumitomo Bakelite Co Ltd | 絶縁ペースト |
JPH04152642A (ja) * | 1990-10-17 | 1992-05-26 | Fujitsu Ltd | 接着用ペースト |
JPH0632987A (ja) * | 1992-07-16 | 1994-02-08 | Shin Etsu Chem Co Ltd | 流動性及び充填剤分離性の改良されたシリコーンゴム組成物 |
JPH06244225A (ja) * | 1993-02-16 | 1994-09-02 | Hitachi Ltd | 半導体装置とその製法 |
JPH07292343A (ja) * | 1994-04-27 | 1995-11-07 | Toray Dow Corning Silicone Co Ltd | 接着剤および半導体装置 |
JPH11343418A (ja) * | 1998-05-04 | 1999-12-14 | Dow Corning Corp | シリコ―ン組成物の製造方法 |
JP2001019936A (ja) * | 1999-07-08 | 2001-01-23 | Dow Corning Toray Silicone Co Ltd | 接着剤、および半導体装置 |
JP2001019928A (ja) * | 1999-07-08 | 2001-01-23 | Dow Corning Toray Silicone Co Ltd | 接着剤、および半導体装置 |
JP2001139894A (ja) * | 1999-11-15 | 2001-05-22 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、および半導体装置 |
JP2001164231A (ja) * | 1999-12-07 | 2001-06-19 | Shigeru Koshibe | 半導体用高純度接着剤 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766176A (en) | 1987-07-20 | 1988-08-23 | Dow Corning Corporation | Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts |
JPH0214244A (ja) | 1988-06-30 | 1990-01-18 | Toray Dow Corning Silicone Co Ltd | 加熱硬化性オルガノポリシロキサン組成物 |
JP2882823B2 (ja) * | 1989-11-15 | 1999-04-12 | 東レ・ダウコーニング・シリコーン株式会社 | 接着剤 |
JP2974700B2 (ja) * | 1989-11-30 | 1999-11-10 | 東レ・ダウコーニング・シリコーン株式会社 | 導電性接着剤 |
US5656862A (en) * | 1990-03-14 | 1997-08-12 | International Business Machines Corporation | Solder interconnection structure |
US5148266A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies having interposer and flexible lead |
US5148265A (en) | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
JPH0521651A (ja) * | 1991-07-12 | 1993-01-29 | Hitachi Chem Co Ltd | 半導体封止用エポキシ樹脂成形材料 |
US5254623A (en) * | 1992-09-25 | 1993-10-19 | Dow Corning Corporation | Curable fluorinated organosiloxane compositions exhibiting improved adhesion |
US5342919A (en) * | 1992-11-23 | 1994-08-30 | Dtm Corporation | Sinterable semi-crystalline powder and near-fully dense article formed therewith |
JP2605970B2 (ja) * | 1993-06-21 | 1997-04-30 | 日本電気株式会社 | 半導体チップ用ダイボンディング樹脂及びそれを用いた半導体装置。 |
US5391604A (en) * | 1993-07-30 | 1995-02-21 | Diemat, Inc. | Adhesive paste containing polymeric resin |
US5477611A (en) | 1993-09-20 | 1995-12-26 | Tessera, Inc. | Method of forming interface between die and chip carrier |
JPH08100162A (ja) * | 1994-09-29 | 1996-04-16 | Nippon Zeon Co Ltd | エポキシ樹脂系接着性組成物を用いる接着方法 |
US6040380A (en) * | 1994-10-11 | 2000-03-21 | Tremco Incorporated | High solids copolymer dispersion from a latex and its use in caulks, sealants and adhesives |
US5521266A (en) * | 1994-10-28 | 1996-05-28 | Rohm And Haas Company | Method for forming polymers |
US5851644A (en) * | 1995-08-01 | 1998-12-22 | Loctite (Ireland) Limited | Films and coatings having anisotropic conductive pathways therein |
JPH09286971A (ja) * | 1996-04-19 | 1997-11-04 | Toray Dow Corning Silicone Co Ltd | シリコーン系ダイボンディング剤、半導体装置の製造方法および半導体装置 |
US6056846A (en) * | 1996-07-25 | 2000-05-02 | Mcdonnell Douglas Helicopter Co. | Bonded composite structure and its fabrication |
KR100320983B1 (ko) * | 1997-08-22 | 2002-06-20 | 포만 제프리 엘 | 칩조립체및직접적인개방열전도성경로의제공방법 |
DE19745053A1 (de) | 1997-10-11 | 1999-05-06 | Mannesmann Sachs Ag | Kupplungsscheibe für Kraftfahrzeug-Kupplungen |
JPH11193829A (ja) | 1997-12-26 | 1999-07-21 | Hks Co Ltd | 多板式クラッチ |
JP2002501821A (ja) * | 1998-01-30 | 2002-01-22 | ロックタイト コーポレイション | 粒子の非ランダム単層にコーティングを形成する方法、及びそれによって形成された製品 |
JP2000118304A (ja) * | 1998-10-15 | 2000-04-25 | Ichikoh Ind Ltd | ネジ構造体及びそれを用いた自動車のミラーアクチュエータ |
US6124407A (en) * | 1998-10-28 | 2000-09-26 | Dow Corning Corporation | Silicone composition, method for the preparation thereof, and silicone elastomer |
US6201055B1 (en) * | 1999-03-11 | 2001-03-13 | Dow Corning Corporation | Silicone composition and silicone pressure sensitive adhesive |
US6784541B2 (en) * | 2000-01-27 | 2004-08-31 | Hitachi, Ltd. | Semiconductor module and mounting method for same |
WO2000060005A1 (fr) * | 1999-04-01 | 2000-10-12 | Mitsui Chemicals, Inc. | Enduit d'etancheite pour affichages a cristaux liquides |
US6121368A (en) * | 1999-09-07 | 2000-09-19 | Dow Corning Corporation | Silicone composition and silicone pressure sensitive adhesive formed therefrom |
-
2001
- 2001-09-17 US US09/954,528 patent/US6784555B2/en not_active Expired - Lifetime
-
2002
- 2002-08-23 DE DE10297225T patent/DE10297225B4/de not_active Expired - Lifetime
- 2002-08-23 KR KR1020047003874A patent/KR100880090B1/ko not_active IP Right Cessation
- 2002-08-23 JP JP2003529862A patent/JP2005503467A/ja not_active Withdrawn
- 2002-08-23 WO PCT/US2002/026787 patent/WO2003025080A1/en active Application Filing
- 2002-08-27 TW TW091119353A patent/TW569363B/zh not_active IP Right Cessation
-
2011
- 2011-04-14 JP JP2011090086A patent/JP2011157559A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63251466A (ja) * | 1987-04-06 | 1988-10-18 | Shin Etsu Chem Co Ltd | 熱伝導性液状シリコ−ンゴム組成物 |
JPH02173073A (ja) * | 1988-12-27 | 1990-07-04 | Sumitomo Bakelite Co Ltd | 絶縁ペースト |
JPH04152642A (ja) * | 1990-10-17 | 1992-05-26 | Fujitsu Ltd | 接着用ペースト |
JPH0632987A (ja) * | 1992-07-16 | 1994-02-08 | Shin Etsu Chem Co Ltd | 流動性及び充填剤分離性の改良されたシリコーンゴム組成物 |
JPH06244225A (ja) * | 1993-02-16 | 1994-09-02 | Hitachi Ltd | 半導体装置とその製法 |
JPH07292343A (ja) * | 1994-04-27 | 1995-11-07 | Toray Dow Corning Silicone Co Ltd | 接着剤および半導体装置 |
JPH11343418A (ja) * | 1998-05-04 | 1999-12-14 | Dow Corning Corp | シリコ―ン組成物の製造方法 |
JP2001019936A (ja) * | 1999-07-08 | 2001-01-23 | Dow Corning Toray Silicone Co Ltd | 接着剤、および半導体装置 |
JP2001019928A (ja) * | 1999-07-08 | 2001-01-23 | Dow Corning Toray Silicone Co Ltd | 接着剤、および半導体装置 |
JP2001139894A (ja) * | 1999-11-15 | 2001-05-22 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、および半導体装置 |
JP2001164231A (ja) * | 1999-12-07 | 2001-06-19 | Shigeru Koshibe | 半導体用高純度接着剤 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018159309A1 (ja) * | 2017-03-03 | 2018-09-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2018147995A (ja) * | 2017-03-03 | 2018-09-20 | 株式会社デンソー | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040044936A (ko) | 2004-05-31 |
US6784555B2 (en) | 2004-08-31 |
JP2005503467A (ja) | 2005-02-03 |
DE10297225T5 (de) | 2004-11-04 |
US20030057538A1 (en) | 2003-03-27 |
DE10297225B4 (de) | 2009-12-31 |
KR100880090B1 (ko) | 2009-01-23 |
TW569363B (en) | 2004-01-01 |
WO2003025080A1 (en) | 2003-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100880090B1 (ko) | 반도체용 다이 부착 접착제, 반도체 장치의 제조 방법 및이 방법으로 제조된 반도체 장치 | |
US7074481B2 (en) | Adhesives for semiconductor applications efficient processes for producing such devices and the devices per se produced by the efficient processes | |
US6235862B1 (en) | Adhesive silicone sheet, method for the preparation thereof and semiconductor devices | |
US20050228097A1 (en) | Thermally conductive compositions and methods of making thereof | |
KR101280277B1 (ko) | 절연성 액상 다이 결합제 및 반도체 디바이스 | |
TWI639208B (zh) | 真空層壓裝置及半導體裝置的製造方法 | |
CN1328770C (zh) | 半导体封装件及其制备方法 | |
EP1067162B1 (en) | Adhesive and semiconductor devices | |
WO1998028788A1 (en) | Manufacture of semiconductor device | |
WO2005117093A1 (ja) | 半導体封止用樹脂シートおよびこれを用いた半導体装置の製造方法 | |
JP3999840B2 (ja) | 封止用樹脂シート | |
EP1067163B1 (en) | Adhesive and semiconductor devices | |
JP6179247B2 (ja) | 電子部品装置の製造方法及び電子部品装置 | |
JP3957244B2 (ja) | 半導体装置の製法 | |
JP4876882B2 (ja) | フリップチップ実装方法 | |
TW565898B (en) | Method for producing a package for semiconductor chips | |
JP2000239355A (ja) | エポキシ樹脂組成物及び半導体装置 | |
WO2022176585A1 (ja) | 半導体装置製造用接着シート及びそれを用いた半導体装置の製造方法 | |
JP2005012048A (ja) | 半導体素子積層用接着基板及びその製造方法、並びに半導体デバイス | |
JP2001261788A (ja) | 封止用エポキシ樹脂組成物 | |
JP2000100870A (ja) | 半導体部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110512 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121218 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130315 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130321 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130618 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140325 |