JP2011113081A - 中小型液晶表示装置及びその製造方法 - Google Patents
中小型液晶表示装置及びその製造方法 Download PDFInfo
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Abstract
【解決手段】第1基板100と、前記第1基板100の第1領域に形成される薄膜トランジスタと、前記第1基板100の第2領域に形成されるストーリッジキャパシタとを備え、前記ストーリッジキャパシタの第1電極160及び第2電極170は、透明導電性物質で形成される。
【選択図】図1
Description
図1は、本発明の実施例による液晶表示装置の断面図である。図1に示された実施例は、TN、VAモードなどで具現される液晶表示装置をその例にして、説明の便宜のために薄膜トランジスタ及びストーリッジキャパシタを含む下部基板を図示する。
以下、図4ないし図6を参照して本発明の実施例による液晶表示装置の製造方法を説明する。ます、図4Aないし4Eは、図1に示された実施例による液晶表示装置の製造工程を示す断面図である。
150、450 ドメイン形成層
152、452 陥入パターン
160、469 第1電極
170、470 第2電極
Claims (27)
- 第1基板と、
前記第1基板の第1領域に形成される薄膜トランジスタと、
前記第1基板の第2領域に形成されるストーリッジキャパシタとを備え、
前記ストーリッジキャパシタの第1電極及び第2電極は透明導電性物質で形成されることを特徴とする中小型液晶表示装置。 - 前記ストーリッジキャパシタの第1及び2電極と重畳される第2領域上に画素電極がさらに形成されることを特徴とする請求項1に記載の中小型液晶表示装置。
- 前記ストーリッジキャパシタの第2電極と画素電極との間に液晶ドメインを形成するための陥入パターンを含むことを特徴とする請求項2に記載の中小型液晶表示装置。
- 前記第1基板と対向する全面に形成された共通電極を含む第2基板と、
前記第1基板と前記第2基板との間に位置し、液晶ドメインを形成する液晶分子を固定させる反応性メソゲン(Reactive mesogen;RM)を持つことを特徴とする請求項1に記載の中小型液晶表示装置。 - 前記薄膜トランジスタは、
ゲート電極と、
前記ゲート電極及び絶縁層を間に置いて形成されるソース電極及びドレイン電極が含まれて構成されることを特徴とする請求項1に記載の中小型液晶表示装置。 - 前記ゲート電極は、
前記第1電極と同一層に形成されることを特徴とする請求項5に記載の中小型液晶表示装置。 - 前記ゲート電極は、
透明導電性物質及び低抵抗金属の積層構造で具現されることを特徴とする請求項5に記載の中小型液晶表示装置。 - 前記ドレイン電極は、
前記第2電極の一部領域と重畳されるように形成され、前記第2電極と前記ドレイン電極が電気的に接続されることを特徴とする請求項5に記載の中小型液晶表示装置。 - 前記陥入パターンによって露出される第2電極の領域上にコンタクト電極がさらに形成されることを特徴とする請求項3に記載の中小型液晶表示装置。
- 前記コンタクト電極は、
前記薄膜トランジスタのソース電極及びドレイン電極と同一物質で形成されることを特徴とする請求項1に記載の中小型液晶表示装置。 - 前記透明導電性物質は、
インジウムスズ酸化物、スズ酸化物、インジウム亜鉛酸化物、インジウムスズ亜鉛酸化物のうち、いずれか一つを含むことを特徴とする請求項1に記載の中小型液晶表示装置。 - 前記第1領域は非透過領域であり、前記第2領域は透過領域であることを特徴とする請求項1に記載の中小型液晶表示装置。
- 第1基板上に薄膜トランジスタのゲート電極及びストーリッジキャパシタの第1電極を形成する段階と、
前記第1電極と重畳される第1絶縁層上にストーリッジキャパシタの第2電極を形成する段階と、
前記第2電極の一部を露出させる陥入パターンが形成された第2絶縁層及びドメイン形成層を形成する段階と、
前記第2電極と重畳される前記ドメイン形成層上に画素電極を形成する段階とが含まれ、
前記ストーリッジキャパシタの第1電極及び第2電極は透明導電性物質で形成されることを特徴とする中小型液晶表示装置の製造方法。 - 前記第1基板と対向する全面に共通電極を含む第2基板が位置される段階と、
前記第1基板と前記第2基板との間に位置し、液晶ドメインを具現する液晶分子を固定させる反応性メソゲンを持つ液晶層が形成される段階とがさらに含まれることを特徴とする請求項13に記載の中小型液晶表示装置の製造方法
。 - 前記ゲート電極及び第1電極は、ハーフトーンマスク工程を利用して同一層上に具現されることを特徴とする請求項13に記載の中小型液晶表示装置の製造方法
。 - 前記ゲート電極は、
透明導電性物質及び低抵抗金属の積層構造でなることを特徴とする請求項15に記載の中小型液晶表示装置の製造方法。 - 前記ゲート電極と重畳される上部または下部に半導体層が形成される段階と、
前記半導体層と電気的に連結されるソース及びドレイン電極が形成される段階とがさらに含まれることを特徴とする請求項13に記載の中小型液晶表示装置の製造方法
。 - 前記陥入パターンによって露出する第2電極の領域上にコンタクト電極を形成する段階がさらに含まれることを特徴とする請求項13に記載の中小型液晶表示装置の製造方法
。 - 前記コンタクト電極は、
薄膜トランジスタのソース電極及びドレイン電極と同一物質で形成されることを特徴とする請求項18に記載の中小型液晶表示装置の製造方法。 - 前記透明導電性物質は、
インジウムスズ酸化物、スズ酸化物、インジウム亜鉛酸化物、インジウムスズ亜鉛酸化物のうち、いずれか一つを含むことを特徴とする請求項13に記載の中小型液晶表示装置の製造方法。 - 非透過領域に位置する薄膜トランジスタと透過領域に順次位置する透明な第1電極、誘電膜及び透明な第2電極を含むストーリッジキャパシタ及び画素電極を含む第1基板と、
第2基板と対向して共通電極を含む第2基板と、
前記第1基板と前記第2基板との間に位置する液晶層を含み、
前記透過領域は前記画素電極と前記共通電極が重畳する領域に定義されることを特徴とする中小型液晶表示装置。 - 前記画素電極は透明な導電性物質を含み、
前記第1電極及び前記第2電極の中で少なくとも一つと重畳してストーリッジキャパシタとともにキャパシタンスを形成することを特徴とする請求項21に記載の中小型液晶表示装置。 - 前記第1基板の下方に位置するバックライトをさらに含み、
前記バックライトから入射されて前記透過領域内で前記第1基板、前記液晶層及び前記第2基板を通過した光の透過率は、80%ないし99.5%であることを特徴とする請求項21に記載の中小型液晶表示装置。 - 前記誘電膜はシリコン窒化物及びシリコン酸化物からなる群より選択された少なくとも一つを含む膜でなることを特徴とする請求項23に記載の中小型液晶表示装置。
- 前記第1電極の厚さは150Åないし1500Åであり、
前記絶縁膜の厚さは400Åないし6000Åであり、
前記第2電極の厚さは150Åないし1500Åであることを特徴とする請求項24に記載の中小型液晶表示装置。 - 前記第1電極及び前記第2電極の中で少なくとも一つは、
前記透過領域の外部まで延長されることを特徴とする請求項21に記載の中小型液晶表示装置。 - 前記液晶表示装置のサイズは、11インチ以下であることを特徴とする請求項21に記載の中小型液晶表示装置。
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US9368521B2 (en) | 2012-11-30 | 2016-06-14 | Sharp Kabushiki Kaisha | TFT substrate |
JP2022125056A (ja) * | 2017-01-11 | 2022-08-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11803089B2 (en) | 2017-01-11 | 2023-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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JP5771365B2 (ja) | 2015-08-26 |
US20150194451A1 (en) | 2015-07-09 |
US9025096B2 (en) | 2015-05-05 |
US20110122330A1 (en) | 2011-05-26 |
EP2345928B1 (en) | 2016-12-21 |
EP2345928A1 (en) | 2011-07-20 |
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