JP2011108759A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2011108759A JP2011108759A JP2009260450A JP2009260450A JP2011108759A JP 2011108759 A JP2011108759 A JP 2011108759A JP 2009260450 A JP2009260450 A JP 2009260450A JP 2009260450 A JP2009260450 A JP 2009260450A JP 2011108759 A JP2011108759 A JP 2011108759A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
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- 230000003667 anti-reflective effect Effects 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】複数の受光領域を備える固体撮像装置が提供される。複数の受光領域のそれぞれの上に、赤色、青色、及び緑色の何れかの光を透過するカラーフィルタが形成されており、赤色又は青色の光を透過するのカラーフィルタが形成されている受光領域の上には、当該受光領域と当該カラーフィルタとの間に、第1の光透過膜、第1の反射防止膜、第2の光透過膜、第2の反射防止膜、及び第3の光透過膜が順に形成されており、緑色の光を透過するカラーフィルタが形成されている受光領域の上には、当該受光領域と当該カラーフィルタとの間に、第1の光透過膜、第1の反射防止膜、第2の光透過膜、及び第3の光透過膜が順に形成されており、第1及び第2の反射防止膜の屈折率は、第1乃至第3の光透過膜の何れの屈折率よりも高いことを特徴とする。
【選択図】図1
Description
図4は、本発明の好適な実施形態の撮像装置(カメラ)の概略構成を示す図である。撮像装置400は、上記の実施形態の固体撮像素子に代表される固体撮像装置404を備える。
Claims (3)
- 複数の受光領域を備える固体撮像装置であって、
前記複数の受光領域のそれぞれの上に、赤色、青色、及び緑色の何れかの光を透過するカラーフィルタが形成されており、
赤色又は青色の光を透過するのカラーフィルタが形成されている受光領域の上には、当該受光領域と当該カラーフィルタとの間に、第1の光透過膜、第1の反射防止膜、第2の光透過膜、第2の反射防止膜、及び第3の光透過膜が順に形成されており、
緑色の光を透過するカラーフィルタが形成されている受光領域の上には、当該受光領域と当該カラーフィルタとの間に、第1の光透過膜、第1の反射防止膜、第2の光透過膜、及び第3の光透過膜が順に形成されており、
前記第1及び第2の反射防止膜の屈折率は、前記第1の光透過膜、前記第2の光透過膜、及び前記第3の光透過膜の何れの屈折率よりも高いことを特徴とする固体撮像装置。 - 前記第1及び第2の反射防止膜は窒化シリコンにより形成されており、前記第1の光透過膜、前記第2の光透過膜、及び前記第3の光透過膜は酸化シリコンにより形成されていることを特徴とする請求項1に記載の固体撮像装置。
- 請求項1又は2に記載の固体撮像装置と、
前記固体撮像装置によって得られた信号を処理する信号処理部と
を備えることを特徴とするカメラ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009260450A JP2011108759A (ja) | 2009-11-13 | 2009-11-13 | 固体撮像装置 |
US12/912,264 US8946843B2 (en) | 2009-11-13 | 2010-10-26 | Solid-state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009260450A JP2011108759A (ja) | 2009-11-13 | 2009-11-13 | 固体撮像装置 |
Publications (1)
Publication Number | Publication Date |
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JP2011108759A true JP2011108759A (ja) | 2011-06-02 |
Family
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JP2009260450A Pending JP2011108759A (ja) | 2009-11-13 | 2009-11-13 | 固体撮像装置 |
Country Status (2)
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US (1) | US8946843B2 (ja) |
JP (1) | JP2011108759A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305608B1 (ko) | 2011-11-22 | 2013-09-09 | 엘지이노텍 주식회사 | 이미지 센서 |
JP2016051060A (ja) * | 2014-08-29 | 2016-04-11 | キヤノン株式会社 | カラーフィルタアレイの形成方法、撮像装置の製造方法、撮像装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5595298B2 (ja) | 2010-04-06 | 2014-09-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007055141A1 (ja) * | 2005-11-11 | 2007-05-18 | Nikon Corporation | 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000196051A (ja) | 1998-12-25 | 2000-07-14 | Matsushita Electric Ind Co Ltd | 固体撮像素子およびその製造方法 |
JP2001352051A (ja) | 2000-06-07 | 2001-12-21 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2002083949A (ja) | 2000-09-07 | 2002-03-22 | Nec Corp | Cmosイメージセンサ及びその製造方法 |
KR20110015473A (ko) * | 2002-12-13 | 2011-02-15 | 소니 주식회사 | 고체 촬상 소자 및 그 제조방법 |
JP4120543B2 (ja) | 2002-12-25 | 2008-07-16 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
JP2004228425A (ja) | 2003-01-24 | 2004-08-12 | Renesas Technology Corp | Cmosイメージセンサの製造方法 |
JP2005142510A (ja) * | 2003-11-10 | 2005-06-02 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2005252194A (ja) | 2004-03-08 | 2005-09-15 | Fuji Film Microdevices Co Ltd | 多層シリコン構造の形成方法及び固体撮像素子の製造方法 |
JP2008091643A (ja) * | 2006-10-02 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
US7875918B2 (en) * | 2009-04-24 | 2011-01-25 | Omnivision Technologies, Inc. | Multilayer image sensor pixel structure for reducing crosstalk |
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2009
- 2009-11-13 JP JP2009260450A patent/JP2011108759A/ja active Pending
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2010
- 2010-10-26 US US12/912,264 patent/US8946843B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007055141A1 (ja) * | 2005-11-11 | 2007-05-18 | Nikon Corporation | 反射防止膜を有する固体撮像装置および表示装置並びにその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305608B1 (ko) | 2011-11-22 | 2013-09-09 | 엘지이노텍 주식회사 | 이미지 센서 |
JP2016051060A (ja) * | 2014-08-29 | 2016-04-11 | キヤノン株式会社 | カラーフィルタアレイの形成方法、撮像装置の製造方法、撮像装置 |
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US20110115953A1 (en) | 2011-05-19 |
US8946843B2 (en) | 2015-02-03 |
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