JP2011049486A - Iii族窒化物半導体積層ウェハ及びiii族窒化物半導体デバイス - Google Patents
Iii族窒化物半導体積層ウェハ及びiii族窒化物半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 89
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 230000004888 barrier function Effects 0.000 claims description 32
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 28
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 67
- 229910002601 GaN Inorganic materials 0.000 description 32
- 239000000203 mixture Substances 0.000 description 32
- 229910052594 sapphire Inorganic materials 0.000 description 16
- 239000010980 sapphire Substances 0.000 description 16
- 238000002474 experimental method Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- -1 sapphire or SiC Chemical class 0.000 description 1
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Abstract
【解決手段】III族窒化物半導体積層ウェハ10は、AlXGa1−XN(0<X≦1)からなる基板27と、Alを含むIII族窒化物系半導体からなり基板27上に設けられた第1のAlGaN層13と、第1のAlGaN層13上に設けられ、第1のAlGaN層13よりバンドギャップが大きいIII族窒化物系半導体からなる第2のAlGaN層15とを備える。第1のAlGaN層13の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅は、1000[arcsec]未満である。
【選択図】図1
Description
実験1:
6枚のサファイア基板を用意し、有機金属気相成長(MOVPE)法を用いて、これらのサファイア基板上に以下の半導体層を成長させて、6枚の積層ウェハA1〜A6を作製した。まず、水素雰囲気にて1050℃及び炉内圧力50Torr(1Torrは、133.322パスカルで換算される)にて、5分間の炉内熱処理を行った。この後に、1250℃、炉内圧力50Torr及びV/III比13の条件でAlNエピタキシャル層を成長した。このとき、5枚のサファイア基板上の各AlNエピタキシャル層の厚さを、それぞれ80[nm],140[nm],200[nm],900[nm]及び600[nm]とした。次いで、1100℃、炉内圧力80Torr及びV/III比4300の条件で、厚さ600[nm]のAlGaNチャネル層(Al原子組成比0.3、Ga原子組成比0.7)を成長した。続いて、1100℃、80torr及びV/III比2100の条件で、厚さ30[nm]のAlGaNバリア層(Al原子組成比0.4、Ga原子組成比0.6)を成長した。
2枚のAlN基板を用意し、有機金属気相成長(MOVPE)法を用いて、該AlN基板上に以下の半導体層を成長させて、積層ウェハC1,C2を作製した。まず、1250℃、炉内圧力50Torr及びV/III比13の条件でAlNエピタキシャル層を800[nm]成長した。次いで、1100℃、炉内圧力80Torr及びV/III比4300の条件で、厚さ600[nm]のAlGaNチャネル層(Al原子組成比0.3、Ga原子組成比0.7)を成長した。続いて、1100℃、80Torr及びV/III比2100の条件で、厚さ30[nm]のAlGaNバリア層(Al原子組成比0.4、Ga原子組成比0.6)を成長した。ウェハC1とC2には同じエピ構造を成長しているものの、基板のX線ロッキングカーブ半値幅が若干異なっている。
上記実験1の積層ウェハA4、および上記実験2の積層ウェハC1のそれぞれの断面を、透過型電子顕微鏡(TEM:Transmission Electron Microscope)により観察し、AlGaNチャネル層の転位密度を測定した。その結果、積層ウェハC1(AlN基板使用)のAlGaNチャネル層の転位密度は5×109[cm−2]であり、積層ウェハA4(サファイア基板使用)のAlGaNチャネル層の転位密度は9×109[cm−2]であった。このように、転位密度が比較的高くても、X線ロッキングカーブ半値幅が十分に小さければ、二次元電子ガスの移動度が高く良好な電流特性が得られる。
本実施形態の比較例として、Alを含まないGaNチャネル層を備える積層ウェハを作製した。すなわち、2枚のサファイア基板と1枚のSi基板を用意し、有機金属気相成長(MOVPE)法を用いて、これらの基板上に以下の半導体層を成長して、3枚の積層ウェハE1〜E3を作製した。
Claims (8)
- AlXGa1−XN(0<X≦1)からなる基板と、
Alを含むIII族窒化物系半導体からなり前記基板上に設けられた第1の半導体層と、
前記第1の半導体層上に設けられ、前記第1の半導体層よりバンドギャップが大きいIII族窒化物系半導体からなる第2の半導体層と
を備え、
前記第1の半導体層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が1000[arcsec]未満であることを特徴とする、III族窒化物半導体積層ウェハ。 - 基板上に設けられたAlXGa1−XN(0<X≦1)層と、
Alを含むIII族窒化物系半導体からなり前記AlXGa1−XN層上に設けられた第1の半導体層と、
前記第1の半導体層上に設けられ、前記第1の半導体層よりバンドギャップが大きいIII族窒化物系半導体からなる第2の半導体層と
を備え、
前記第1の半導体層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が1000[arcsec]未満であることを特徴とする、III族窒化物半導体積層ウェハ。 - 前記第1の半導体層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が400[arcsec]未満であることを特徴とする、請求項1または2に記載のIII族窒化物半導体積層ウェハ。
- 前記第1及び第2の半導体層が共にAlGaNからなることを特徴とする、請求項1〜3のいずれか一項に記載のIII族窒化物半導体積層ウェハ。
- AlXGa1−XN(0<X≦1)からなる基板と、
Alを含むIII族窒化物系半導体からなり前記基板上に設けられたチャネル層と、
前記第1の半導体層上に設けられ、前記第1の半導体層よりバンドギャップが大きいIII族窒化物系半導体からなるバリア層と、
を備え、
前記チャネル層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が1000[arcsec]未満であることを特徴とする、III族窒化物半導体デバイス。 - 基板上に設けられたAlXGa1−XN(0<X≦1)層と、
Alを含むIII族窒化物系半導体からなり前記AlXGa1−XN層上に設けられたチャネル層と、
前記第1の半導体層上に設けられ、前記第1の半導体層よりバンドギャップが大きいIII族窒化物系半導体からなるバリア層と
を備え、
前記第1の半導体層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が1000[arcsec]未満であることを特徴とする、III族窒化物半導体デバイス。 - 前記チャネル層の(0002)面及び(10−12)面におけるX線ロッキングカーブの半値幅が400[arcsec]未満であることを特徴とする、請求項5または6に記載のIII族窒化物半導体デバイス。
- 前記チャネル層及び前記バリア層が共にAlGaNからなることを特徴とする、請求項5〜7のいずれか一項に記載のIII族窒化物半導体デバイス。
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US12/732,775 US8148751B2 (en) | 2009-08-28 | 2010-03-26 | Group III nitride semiconductor wafer and group III nitride semiconductor device |
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JP2013014450A (ja) * | 2011-07-01 | 2013-01-24 | Hitachi Cable Ltd | 窒化物半導体エピタキシャル基板及び窒化物半導体デバイス |
JP2013093384A (ja) * | 2011-10-24 | 2013-05-16 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法、及びエピタキシャルウエハ |
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JP4888537B2 (ja) * | 2009-08-28 | 2012-02-29 | 住友電気工業株式会社 | Iii族窒化物半導体積層ウェハ及びiii族窒化物半導体デバイス |
JP5665171B2 (ja) * | 2010-05-14 | 2015-02-04 | 住友電気工業株式会社 | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法 |
EP3486939B1 (en) * | 2017-11-20 | 2020-04-01 | IMEC vzw | Method for forming a semiconductor structure for a gallium nitride channel device |
JP6727186B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
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JP4670055B2 (ja) | 2006-03-20 | 2011-04-13 | Dowaエレクトロニクス株式会社 | 半導体基板及び半導体装置 |
JP4888537B2 (ja) * | 2009-08-28 | 2012-02-29 | 住友電気工業株式会社 | Iii族窒化物半導体積層ウェハ及びiii族窒化物半導体デバイス |
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JPH11103134A (ja) * | 1997-09-29 | 1999-04-13 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2005203418A (ja) * | 2004-01-13 | 2005-07-28 | Hitachi Cable Ltd | 窒化物系化合物半導体基板及びその製造方法 |
JP2006032911A (ja) * | 2004-06-15 | 2006-02-02 | Ngk Insulators Ltd | 半導体積層構造、半導体素子およびhemt素子 |
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JP2013014450A (ja) * | 2011-07-01 | 2013-01-24 | Hitachi Cable Ltd | 窒化物半導体エピタキシャル基板及び窒化物半導体デバイス |
JP2013093384A (ja) * | 2011-10-24 | 2013-05-16 | Sumitomo Electric Ind Ltd | Iii族窒化物半導体電子デバイス、iii族窒化物半導体電子デバイスを作製する方法、及びエピタキシャルウエハ |
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US8148751B2 (en) | 2012-04-03 |
US20120161205A1 (en) | 2012-06-28 |
JP4888537B2 (ja) | 2012-02-29 |
US20110049573A1 (en) | 2011-03-03 |
US8633514B2 (en) | 2014-01-21 |
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