JP2011029176A - 発光装置、照明装置及び電子機器 - Google Patents
発光装置、照明装置及び電子機器 Download PDFInfo
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- 230000003313 weakening effect Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- CJGUQZGGEUNPFQ-UHFFFAOYSA-L zinc;2-(1,3-benzothiazol-2-yl)phenolate Chemical compound [Zn+2].[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1.[O-]C1=CC=CC=C1C1=NC2=CC=CC=C2S1 CJGUQZGGEUNPFQ-UHFFFAOYSA-L 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
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Abstract
【解決手段】発光素子を含む素子部を、可撓性及び可視光に対する透光性を有する基板と、金属基板とで挟持し、さらに素子部の外周部において素子部の上下に設けられた絶縁層が互いに接して素子部を封止する構造を有する発光装置により信頼性の高い発光装置を得ることができる。また、このような構成の発光装置を電子機器または照明装置に搭載して、信頼性の高い電子機器または照明装置を得ることができる。
【選択図】図1
Description
本実施の形態では、発光装置の一例を図1を用いて説明する。図1に本実施の形態の発光装置の表示部を示す。
実施の形態1に一態様を示した発光装置の作製方法の一例を図3乃至5を用いて説明する。本実施の形態においては、図1(A)に示した発光装置の構成を作製する場合を例に説明する。
第1の絶縁層104及び第2の絶縁層140は、それぞれ窒素と珪素を含む膜で形成されているため、溝部において強固に接着することが可能である。従って、素子部150の外周を囲むように溝部を形成することで、素子部を強固に封止することが可能となる。
本実施の形態では、発光装置の有する発光素子の構成について図6を用いて具体的に説明する。
本実施の形態では、FPCが接続されたモジュール型の発光装置について図7を参照して説明する。図7(A)は、実施の形態2に一例を示す作製方法によって作製した発光装置を示す上面図である。また、図7(B)は、図7(A)をA−A’で切断した断面図である。
本実施の形態では、上記実施の形態に示す発光装置をその一部に含む電子機器及び照明装置について説明する。
102 剥離層
104 第1の絶縁層
106 薄膜トランジスタ
106a 半導体層
106b ゲート絶縁層
106c ゲート電極
130 電極
134 EL層
136 電極
137 隔壁
138 発光素子
140 第2の絶縁層
142 樹脂膜
144 金属基板
150 素子部
152 絶縁層
154 絶縁膜
156 シール材
160 溝部
200 カラーフィルタ層
204 配線
206 層間絶縁膜
208 平坦化膜
210 バリア膜
212 電極
214 カラーフィルタ基板
216 コート膜
218 カラーフィルタ基板
250 画素部
252 駆動回路部
300 基板
302 剥離層
304 素子形成層
305 粘着シート
402 FPC
502 画素部
503 ゲート側駆動回路
504 ソース側駆動回路
508 配線
511 電流制御用TFT
512 画素電極
513 nチャネル型TFT
514 pチャネル型TFT
600 電荷発生層
9501 照明部
9503 支柱
9505 支持台
9601 本体
9602 表示部
9603 外部メモリ挿入部
9604 スピーカー部
9605 操作キー
Claims (10)
- 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の絶縁層と、
前記第1の絶縁層上に設けられ、発光素子と、前記発光素子に電位をかけるためのスイッチング素子とを少なくとも有する素子部と、
前記素子部の側面及び上面を覆う第2の絶縁層と、
前記第2の絶縁層上に設けられ、前記基板と対向する金属基板と、を有し、
前記素子部の外周において、前記第1の絶縁層と前記第2の絶縁層との少なくとも一部が互いに接する発光装置。 - 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の絶縁層と、
前記第1の絶縁層上に設けられ、発光素子と、前記発光素子に電位をかけるためのスイッチング素子とを少なくとも有する素子部と、
前記素子部の側面及び上面を覆う第2の絶縁層と、
前記第2の絶縁層上に設けられた樹脂膜と、
前記樹脂膜上に設けられ、前記基板と対向する金属基板と、を有し、
前記素子部の外周において、前記第1の絶縁層と前記第2の絶縁層の少なくとも一部が互いに接する発光装置。 - 請求項1または2において、
前記基板の素子部が設けられた面と反対側の表面に、第3の絶縁層が設けられている発光装置。 - 可撓性及び可視光に対する透光性を有する基板と、
前記基板上に設けられた第1の絶縁層と、
前記第1の絶縁層上に設けられ、発光素子と、前記発光素子に電位をかけるためのスイッチング素子とを少なくとも有する素子部と、
前記素子部の側面及び上面を覆う第2の絶縁層と、
前記第2の絶縁層上に設けられ、前記素子部の外周を囲むシール材と、
前記基板と対向する金属基板と、を有し、
前記素子部の外周であって、前記シール材で囲まれた領域において、前記第1の絶縁層と前記第2の絶縁層の少なくとも一部が互いに接する発光装置。 - 請求項1乃至4のいずれか一項において、
前記第1の絶縁層と前記第2の絶縁層は、前記素子部を囲むように互いに接する発光装置。 - 請求項1乃至5のいずれか一項において、
前記金属基板上にさらに樹脂膜が設けられている発光装置。 - 請求項1乃至6のいずれか一項において、
前記金属基板は、ステンレス、アルミニウム、銅、ニッケル、アルミニウム合金から選ばれる材料によりなる発光装置。 - 請求項1乃至7のいずれか一項において、
前記金属基板の膜厚は、10μm以上200μm以下である発光装置。 - 請求項1乃至8のいずれか一項に記載の発光装置を表示部に適用した電子機器。
- 請求項1乃至8のいずれか一項に記載の発光装置を用いた照明装置。
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JP2012186155A (ja) * | 2011-02-14 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 発光装置、表示装置およびそれらの作製方法 |
JP2012216834A (ja) * | 2011-03-31 | 2012-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2012227284A (ja) * | 2011-04-18 | 2012-11-15 | Seiko Epson Corp | 発光素子、発光装置、表示装置および電子機器 |
JP2013069480A (ja) * | 2011-09-21 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | 発光装置、電子機器、及び照明装置 |
JP2013229258A (ja) * | 2012-04-26 | 2013-11-07 | Konica Minolta Inc | 有機半導体素子及びその製造方法 |
JP2015213164A (ja) * | 2014-04-18 | 2015-11-26 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
JP2016039328A (ja) * | 2014-08-08 | 2016-03-22 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
WO2016083952A1 (en) * | 2014-11-28 | 2016-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, module, and electronic device |
JP2016136529A (ja) * | 2016-03-22 | 2016-07-28 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP2017102462A (ja) * | 2016-12-22 | 2017-06-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
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US20160126493A1 (en) | 2016-05-05 |
US9240525B2 (en) | 2016-01-19 |
US20110001146A1 (en) | 2011-01-06 |
US10418586B2 (en) | 2019-09-17 |
JP5796115B2 (ja) | 2015-10-21 |
JP2019207880A (ja) | 2019-12-05 |
JP2017063061A (ja) | 2017-03-30 |
JP2014239045A (ja) | 2014-12-18 |
JP2023040309A (ja) | 2023-03-22 |
JP2015233015A (ja) | 2015-12-24 |
US20170373271A1 (en) | 2017-12-28 |
JP6078599B2 (ja) | 2017-02-08 |
US9768410B2 (en) | 2017-09-19 |
JP2021184385A (ja) | 2021-12-02 |
US20140138711A1 (en) | 2014-05-22 |
US8766269B2 (en) | 2014-07-01 |
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