JP6158542B2 - 発光素子、発光装置、電子機器、および照明装置 - Google Patents
発光素子、発光装置、電子機器、および照明装置 Download PDFInfo
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- JP6158542B2 JP6158542B2 JP2013047830A JP2013047830A JP6158542B2 JP 6158542 B2 JP6158542 B2 JP 6158542B2 JP 2013047830 A JP2013047830 A JP 2013047830A JP 2013047830 A JP2013047830 A JP 2013047830A JP 6158542 B2 JP6158542 B2 JP 6158542B2
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- 239000002356 single layer Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- JIIYLLUYRFRKMG-UHFFFAOYSA-N tetrathianaphthacene Chemical compound C1=CC=CC2=C3SSC(C4=CC=CC=C44)=C3C3=C4SSC3=C21 JIIYLLUYRFRKMG-UHFFFAOYSA-N 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
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Description
まず、三重項励起エネルギーを発光に変える発光性物質(燐光性化合物や熱活性化遅延蛍光(TADF)材料を含む)をゲスト材料として用いる発光素子における発光の一般的な素過程について説明する。なお、ここでは、励起エネルギーを与える側の分子をホスト分子、励起エネルギーを受け取る側の分子をゲスト分子と記す。
ゲスト分子は燐光を発する。
一重項励起状態のゲスト分子は三重項励起状態に項間交差し、燐光を発する。
ホスト分子のT1準位がゲスト分子のT1準位よりも高い場合、ホスト分子からゲスト分子に励起エネルギーが移動し、ゲスト分子が三重項励起状態となる。三重項励起状態となったゲスト分子は燐光を発する。なお、ホスト分子のT1準位からゲスト分子の一重項励起エネルギーの準位(S1準位)へのエネルギー移動は、ホスト分子が燐光発光しない限り禁制であり、主たるエネルギー移動過程になりにくいため、ここでは省略する。つまり、下記式(2−1)の通り、ホスト分子の三重項励起状態(3H*)からゲスト分子の三重項励起状態(3G*)へのエネルギー移動が重要である(式中、1Gはゲスト分子の一重項基底状態、1Hはホスト分子の一重項基底状態を表す)。
ホスト分子のS1準位がゲスト分子のS1準位およびT1準位よりも高い場合、ホスト分子からゲスト分子に励起エネルギーが移動し、ゲスト分子が一重項励起状態又は三重項励起状態となる。三重項励起状態となったゲスト分子は燐光を発する。また、一重項励起状態となったゲスト分子は、三重項励起状態に項間交差し、燐光を発する。
1H*+1G → 1H+3G* (2−2B)
ここでまず、(2−1)のエネルギー移動過程を考えてみる。この場合、フェルスター型(数式(1))は禁制となるため、デクスター型(数式(2))のみを考えれば良い。数式(2)によれば、速度定数kh*→gを大きくするにはホスト分子の発光スペクトル(三重項励起状態からのエネルギー移動を論じているので燐光スペクトル)とゲスト分子の吸収スペクトル(一重項基底状態から三重項励起状態への直接遷移に相当する吸収)との重なりが大きい方が良いことがわかる。
次に、(2−2)のエネルギー移動過程を考えてみる。式(2−2A)の過程は、ゲスト材料の項間交差効率が影響してしまう。したがって、極限まで発光効率を高めるためには、式(2−2B)の過程が重要であると考えられる。この場合、デクスター型(数式(2))は禁制となるため、フェルスター型(数式(1))のみを考えれば良い。
本実施の形態では、本発明の一態様である発光素子を構成する上での概念および具体的な発光素子の構成について説明する。なお、本発明の一態様である発光素子は、一対の電極(陽極及び陰極)間に発光層を含むEL層を挟んで形成されており、発光層は、三重項励起エネルギーを発光に変える第1の発光性物質(ゲスト材料)、電子輸送性を有する第1の有機化合物(ホスト材料)、および正孔輸送性を有する第2の有機化合物(アシスト材料)を少なくとも含み、かつ陽極側に形成された第1の発光層と、三重項励起エネルギーを発光に変える第2の発光性物質(ゲスト材料)、電子輸送性を有する第1の有機化合物(ホスト材料)、および正孔輸送性を有する第3の有機化合物(アシスト材料)を少なくとも含み形成された第2の発光層との積層構造を有する。
本実施の形態では、本発明の一態様である発光素子の一例について図5を用いて説明する。
本実施の形態では、本発明の一態様として、電荷発生層を挟んでEL層を複数有する構造の発光素子(以下、タンデム型発光素子という)について説明する。
本実施の形態では、本発明の一態様である発光装置について説明する。
本実施の形態では、本発明の一態様である発光素子を有する発光装置について説明する。
本実施の形態では、本発明の一態様である発光素子を適用して作製された発光装置を用いて完成させた様々な電子機器の一例について、図9、図10を用いて説明する。
本実施の形態では、本発明の一態様である発光素子を含む発光装置を適用した照明装置の一例について、図11を用いて説明する。
まず、ガラス製の基板1100上に酸化珪素を含むインジウム錫酸化物(ITSO)をスパッタリング法により成膜し、陽極として機能する第1の電極1101を形成した。なお、その膜厚は110nmとし、電極面積は2mm×2mmとした。
作製した発光素子1の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
102 第2の電極
103 EL層
104 正孔注入層
105 正孔輸送層
106 発光層
106a 第1の発光層
106b 第2の発光層
107 電子輸送層
108 電子注入層
109 発光性物質
109a 三重項励起エネルギーを発光に変える第1の発光性物質
109b 三重項励起エネルギーを発光に変える第2の発光性物質
110 第1の有機化合物
111 第2の有機化合物
112 第3の有機化合物
201 第1の電極(陽極)
202 第2の電極(陰極)
203 EL層
204 正孔注入層
205 正孔輸送層
206 発光層
206a 第1の発光層
206b 第2の発光層
207 電子輸送層
208 電子注入層
209 発光性物質
209a 三重項励起エネルギーを発光に変える第1の発光性物質
209b 三重項励起エネルギーを発光に変える第2の発光性物質
210 第1の有機化合物
211 第2の有機化合物
212 第3の有機化合物
301 第1の電極
302(1) 第1のEL層
302(2) 第2のEL層
302(n−1) 第(n−1)のEL層
302(n) 第(n)のEL層
304 第2の電極
305 電荷発生層(I)
305(1) 第1の電荷発生層(I)
305(2) 第2の電荷発生層(I)
305(n−2) 第(n−2)の電荷発生層(I)
305(n−1) 第(n−1)の電荷発生層(I)
401 反射電極
402 半透過・半反射電極
403a 第1の透明導電層
403b 第2の透明導電層
404B 第1の発光層(B)
404G 第2の発光層(G)
404R 第3の発光層(R)
405 EL層
410R 第1の発光素子(R)
410G 第2の発光素子(G)
410B 第3の発光素子(B)
501 素子基板
502 画素部
503 駆動回路部(ソース線駆動回路)
504a、504b 駆動回路部(ゲート線駆動回路)
505 シール材
506 封止基板
507 引き回し配線
508 FPC(フレキシブルプリントサーキット)
509 nチャネル型TFT
510 pチャネル型TFT
511 スイッチング用TFT
512 電流制御用TFT
513 第1の電極(陽極)
514 絶縁物
515 EL層
516 第2の電極(陰極)
517 発光素子
518 空間
7100 テレビジョン装置
7101 筐体
7103 表示部
7105 スタンド
7107 表示部
7109 操作キー
7110 リモコン操作機
7201 本体
7202 筐体
7203 表示部
7204 キーボード
7205 外部接続ポート
7206 ポインティングデバイス
7301 筐体
7302 筐体
7303 連結部
7304 表示部
7305 表示部
7306 スピーカ部
7307 記録媒体挿入部
7308 LEDランプ
7309 操作キー
7310 接続端子
7311 センサ
7312 マイクロフォン
7400 携帯電話機
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
8001 照明装置
8002 照明装置
8003 照明装置
8004 照明装置
9033 留め具
9034 表示モード切り替えスイッチ
9035 電源スイッチ
9036 省電力モード切り替えスイッチ
9038 操作スイッチ
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a タッチパネルの領域
9632b タッチパネルの領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 操作キー
9638 コンバータ
9639 ボタン
Claims (7)
- 陽極と陰極との間に発光層を有し、
前記発光層は、第1の発光層と、第2の発光層と、を有し、
前記第1の発光層は、前記陽極と前記第2の発光層との間に設けられ、
前記第1の発光層は、三重項励起エネルギーを発光に変える第1の発光性物質と、電子輸送性を有する第1の有機化合物と、正孔輸送性を有する第2の有機化合物と、を有し、
前記第2の発光層は、三重項励起エネルギーを発光に変える第2の発光性物質と、前記第1の有機化合物と、正孔輸送性を有する第3の有機化合物と、を有し、
前記第2の有機化合物は、前記第3の有機化合物よりも最高被占有軌道準位(HOMO準位)が低く、
前記第1の発光性物質は、前記第2の発光性物質よりも短波長の発光を示し、
前記第1の有機化合物と前記第2の有機化合物とは、第1の励起錯体を形成し、
前記第1の有機化合物と前記第3の有機化合物とは、第2の励起錯体を形成する発光素子。 - 請求項1において、
前記第1の励起錯体は、前記第2の励起錯体よりも励起エネルギーが大きい発光素子。 - 請求項1または請求項2において、
前記第1の励起錯体は、前記第1の有機化合物のアニオンと前記第2の有機化合物のカチオンから形成され、
前記第2の励起錯体は、前記第1の有機化合物のアニオンと前記第3の有機化合物のカチオンから形成される発光素子。 - 請求項1乃至請求項3のいずれか一において、
前記第1の発光性物質は、燐光性化合物または熱活性化遅延蛍光材料であり、
前記第2の発光性物質は、燐光性化合物または熱活性化遅延蛍光材料であり、
前記第1の有機化合物は、π不足型複素芳香族化合物であり、
前記第2の有機化合物は、π過剰型複素芳香族化合物または芳香族アミン化合物であり、
前記第3の有機化合物は、π過剰型複素芳香族化合物または芳香族アミン化合物である発光素子。 - 請求項1乃至請求項4のいずれか一に記載の発光素子を用いた発光装置。
- 請求項5に記載の発光装置を用いた電子機器。
- 請求項5に記載の発光装置を用いた照明装置。
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US13/850,534 US9065066B2 (en) | 2012-04-13 | 2013-03-26 | Light-emitting element, light-emitting device, electronic device, and lighting device |
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US14/730,868 US9595686B2 (en) | 2012-04-13 | 2015-06-04 | Light-emitting element, light-emitting device, electronic device, and lighting device |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013258402A (ja) * | 2012-05-18 | 2013-12-26 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、表示装置、電子機器及び照明装置 |
JP2017152410A (ja) * | 2012-04-13 | 2017-08-31 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器及び照明装置 |
US10818861B2 (en) | 2012-04-13 | 2020-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI831058B (zh) * | 2011-02-28 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 發光元件 |
DE112013001439B4 (de) | 2012-03-14 | 2022-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
JP2013232629A (ja) | 2012-04-06 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
JP6158543B2 (ja) | 2012-04-13 | 2017-07-05 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、および照明装置 |
KR102264577B1 (ko) | 2012-04-20 | 2021-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
KR20230035438A (ko) | 2012-04-20 | 2023-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
DE102013208844A1 (de) | 2012-06-01 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierendes Element, lichtemittierende Vorrichtung, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
TWI792181B (zh) | 2012-08-03 | 2023-02-11 | 日商半導體能源研究所股份有限公司 | 發光元件 |
TWI733065B (zh) * | 2012-08-03 | 2021-07-11 | 日商半導體能源研究所股份有限公司 | 發光元件、發光裝置、顯示裝置、電子裝置及照明設備 |
US9142710B2 (en) | 2012-08-10 | 2015-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic device, and lighting device |
TWI612051B (zh) * | 2013-03-01 | 2018-01-21 | 半導體能源研究所股份有限公司 | 有機金屬錯合物、發光元件、發光裝置、電子裝置、照明設備 |
KR102178256B1 (ko) | 2013-03-27 | 2020-11-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
JP6513565B2 (ja) * | 2013-03-29 | 2019-05-22 | 株式会社Kyulux | 有機エレクトロルミネッセンス素子 |
US10043982B2 (en) | 2013-04-26 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic device, and lighting device |
US10461269B2 (en) * | 2013-12-20 | 2019-10-29 | Molecular Glasses, Inc. | Crosslinkable, /polymerizable and combinations thereof charge-transporting molecular glass mixtures, luminescent molecular glass mixtures, or combinations thereof for organic light emitting diodes and other organic electronics and photonics applications and method of making same |
KR102107566B1 (ko) * | 2013-09-30 | 2020-05-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102088883B1 (ko) * | 2013-12-02 | 2020-03-16 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
US9362517B2 (en) | 2013-12-02 | 2016-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display module, lighting module, light-emitting device, display device, electronic appliance, and lighting device |
JP5905916B2 (ja) | 2013-12-26 | 2016-04-20 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子および電子機器 |
US10020455B2 (en) | 2014-01-07 | 2018-07-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate platinum and palladium complex emitters containing phenyl-pyrazole and its analogues |
TW202318696A (zh) | 2014-05-30 | 2023-05-01 | 日商半導體能源研究所股份有限公司 | 發光元件,發光裝置,電子裝置以及照明裝置 |
CN103985822B (zh) * | 2014-05-30 | 2017-05-10 | 广州华睿光电材料有限公司 | 有机混合物、包含其的组合物、有机电子器件及应用 |
US9941479B2 (en) | 2014-06-02 | 2018-04-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues |
US9343691B2 (en) * | 2014-08-08 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
WO2016020801A1 (en) | 2014-08-08 | 2016-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
KR102353647B1 (ko) | 2014-08-29 | 2022-01-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 표시 장치, 전자 기기, 및 조명 장치 |
WO2016051309A1 (en) * | 2014-09-30 | 2016-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, electronic device, and lighting device |
US20160104855A1 (en) | 2014-10-10 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Display Device, Electronic Device, and Lighting Device |
US10153449B2 (en) | 2014-10-16 | 2018-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
JP6494079B2 (ja) * | 2014-10-31 | 2019-04-03 | 国立大学法人九州大学 | 有機発光素子 |
US10892420B2 (en) * | 2014-11-18 | 2021-01-12 | Hodogaya Chemical Co., Ltd. | Organic electroluminescent device |
KR102327918B1 (ko) * | 2015-01-02 | 2021-11-17 | 삼성디스플레이 주식회사 | 투명 디스플레이 장치와 그의 제조 방법 |
KR101706752B1 (ko) * | 2015-02-17 | 2017-02-27 | 서울대학교산학협력단 | 호스트, 인광 도펀트 및 형광 도펀트를 포함하는 유기발광소자 |
US10903440B2 (en) * | 2015-02-24 | 2021-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
TWI737594B (zh) * | 2015-03-09 | 2021-09-01 | 日商半導體能源研究所股份有限公司 | 發光元件,顯示裝置,電子裝置,與照明裝置 |
TWI704706B (zh) | 2015-03-09 | 2020-09-11 | 日商半導體能源研究所股份有限公司 | 發光元件、顯示裝置、電子裝置及照明設置 |
DE112016002728T5 (de) * | 2015-06-17 | 2018-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Iridiumkomplex, Licht emittierendes Element, Anzeigevorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
TW202341542A (zh) * | 2015-07-23 | 2023-10-16 | 日商半導體能源研究所股份有限公司 | 發光元件,顯示裝置,電子裝置,以及照明裝置 |
KR102388253B1 (ko) * | 2015-11-06 | 2022-04-20 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
CN113937228A (zh) * | 2015-12-01 | 2022-01-14 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备及照明装置 |
KR102148745B1 (ko) * | 2016-01-08 | 2020-08-27 | 코니카 미놀타 가부시키가이샤 | 박막 및 유기 일렉트로루미네센스 소자 |
US9911937B2 (en) | 2016-05-12 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
WO2018100476A1 (en) | 2016-11-30 | 2018-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
CN106816542B (zh) * | 2017-01-16 | 2018-10-16 | 中国科学院长春应用化学研究所 | 一种白色有机电致发光器件及其制备方法 |
CN110462867A (zh) * | 2017-03-21 | 2019-11-15 | 柯尼卡美能达株式会社 | 有机电致发光元件 |
CN110010773B (zh) * | 2018-01-05 | 2023-08-18 | 固安鼎材科技有限公司 | 一种调节载流子迁移率的发光层及有机电致发光器件 |
US11950497B2 (en) | 2018-03-07 | 2024-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, electronic device, organic compound, and lighting device |
JP7059094B2 (ja) | 2018-04-26 | 2022-04-25 | キヤノン株式会社 | 有機el素子、それを有する表示装置、撮像装置、照明装置、移動体 |
JP2018199722A (ja) * | 2018-09-14 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 有機化合物及び発光装置 |
CN111384125A (zh) * | 2018-12-31 | 2020-07-07 | 乐金显示有限公司 | 显示装置及其制造方法 |
CN109768178B (zh) * | 2019-01-22 | 2021-03-30 | 京东方科技集团股份有限公司 | 有机电致发光器件、显示基板、显示装置 |
US11878988B2 (en) | 2019-01-24 | 2024-01-23 | Arizona Board Of Regents On Behalf Of Arizona State University | Blue phosphorescent emitters employing functionalized imidazophenthridine and analogues |
KR20210126000A (ko) | 2019-02-06 | 2021-10-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 디바이스, 발광 기기, 표시 장치, 전자 기기, 및 조명 장치 |
KR20210124284A (ko) * | 2019-02-20 | 2021-10-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 디바이스, 발광 장치, 전자 기기, 및 조명 장치 |
KR20200127117A (ko) * | 2019-04-30 | 2020-11-10 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
US11785838B2 (en) * | 2019-10-02 | 2023-10-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Green and red organic light-emitting diodes employing excimer emitters |
CN111129088B (zh) * | 2019-12-17 | 2022-09-09 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管显示装置 |
US11945985B2 (en) | 2020-05-19 | 2024-04-02 | Arizona Board Of Regents On Behalf Of Arizona State University | Metal assisted delayed fluorescent emitters for organic light-emitting diodes |
KR20220022012A (ko) * | 2020-08-14 | 2022-02-23 | 삼성디스플레이 주식회사 | 발광 소자 및 이를 포함하는 전자 장치 |
CN112151686B (zh) * | 2020-09-25 | 2024-04-23 | 京东方科技集团股份有限公司 | 有机电致发光器件、显示面板及显示装置 |
CN112750958B (zh) * | 2021-01-05 | 2022-06-14 | 吉林大学 | 利用蓝光染料和激基复合物实现的白光有机电致发光器件 |
CN112909197B (zh) * | 2021-02-08 | 2024-02-06 | 吉林奥来德光电材料股份有限公司 | 超荧光叠层器件及其制备方法、显示面板和显示装置 |
Family Cites Families (104)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5518505A (en) | 1978-07-21 | 1980-02-08 | Senjiyu Kinzoku Kogyo Kk | Soldering alloy for attaching silver electrode leading wire |
US5420288A (en) | 1992-04-14 | 1995-05-30 | Ricoh Company, Ltd. | Electroluminescent device comprising oxadiazole compounds luminescent material, oxadiazole compounds for the device, and method of producing oxadiazole compounds |
JPH06145658A (ja) | 1992-04-14 | 1994-05-27 | Ricoh Co Ltd | 電界発光素子 |
JPH06107648A (ja) | 1992-09-29 | 1994-04-19 | Ricoh Co Ltd | 新規なオキサジアゾール化合物 |
JPH0665569A (ja) | 1992-06-20 | 1994-03-08 | Ricoh Co Ltd | 電界発光素子 |
JP3341090B2 (ja) | 1992-07-27 | 2002-11-05 | 株式会社リコー | オキサジアゾール誘導体ならびにその製造法 |
JPH0785972A (ja) | 1993-09-20 | 1995-03-31 | Toshiba Corp | 有機el素子 |
US5597890A (en) | 1993-11-01 | 1997-01-28 | Research Corporation Technologies, Inc. | Conjugated polymer exciplexes and applications thereof |
US5409783A (en) | 1994-02-24 | 1995-04-25 | Eastman Kodak Company | Red-emitting organic electroluminescent device |
US5709492A (en) | 1994-04-27 | 1998-01-20 | Sakura Color Products Corp. | Liquid applicator |
DE19638770A1 (de) | 1996-09-21 | 1998-03-26 | Philips Patentverwaltung | Organisches elektrolumineszentes Bauelement mit Exciplex |
EP0879868B1 (en) * | 1997-05-19 | 2002-04-03 | Canon Kabushiki Kaisha | Organic compound and electroluminescent device using the same |
JP3508984B2 (ja) | 1997-05-19 | 2004-03-22 | キヤノン株式会社 | 有機化合物及び該有機化合物を用いた発光素子 |
US6097147A (en) | 1998-09-14 | 2000-08-01 | The Trustees Of Princeton University | Structure for high efficiency electroluminescent device |
EP2306495B1 (en) | 1999-05-13 | 2017-04-19 | The Trustees of Princeton University | Very high efficiency organic light emitting devices based on electrophosphorescence |
EP1202608B2 (en) | 2000-10-30 | 2012-02-08 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Organic light-emitting devices |
SG138466A1 (en) | 2000-12-28 | 2008-01-28 | Semiconductor Energy Lab | Luminescent device |
TW519770B (en) | 2001-01-18 | 2003-02-01 | Semiconductor Energy Lab | Light emitting device and manufacturing method thereof |
ITTO20010692A1 (it) * | 2001-07-13 | 2003-01-13 | Consiglio Nazionale Ricerche | Dispositivo elettroluminescente organico basato sull'emissione di ecciplessi od elettroplessi e sua realizzazione. |
US6863997B2 (en) | 2001-12-28 | 2005-03-08 | The Trustees Of Princeton University | White light emitting OLEDs from combined monomer and aggregate emission |
US6869695B2 (en) | 2001-12-28 | 2005-03-22 | The Trustees Of Princeton University | White light emitting OLEDs from combined monomer and aggregate emission |
ITBO20020165A1 (it) | 2002-03-29 | 2003-09-29 | Consiglio Nazionale Ricerche | Dispositivo elettroluminescente organico con droganti cromofori |
US6951694B2 (en) | 2002-03-29 | 2005-10-04 | The University Of Southern California | Organic light emitting devices with electron blocking layers |
TWI314947B (en) | 2002-04-24 | 2009-09-21 | Eastman Kodak Compan | Organic light emitting diode devices with improved operational stability |
TW556446B (en) * | 2002-09-11 | 2003-10-01 | Opto Tech Corp | Organic light-emitting device and the manufacturing method thereof |
TWI316827B (en) | 2003-02-27 | 2009-11-01 | Toyota Jidoshokki Kk | Organic electroluminescent device |
JP4531342B2 (ja) | 2003-03-17 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 白色有機発光素子および発光装置 |
JP4487587B2 (ja) | 2003-05-27 | 2010-06-23 | 株式会社デンソー | 有機el素子およびその製造方法 |
US20080217604A1 (en) | 2003-08-29 | 2008-09-11 | Matsushita Electric Industrial Co., Ltd. | Organic Semiconductor Film, Electron Device Using the Same and Manufacturing Method Therefor |
US7175922B2 (en) | 2003-10-22 | 2007-02-13 | Eastman Kodak Company | Aggregate organic light emitting diode devices with improved operational stability |
JP4328702B2 (ja) | 2003-12-01 | 2009-09-09 | キヤノン株式会社 | 有機el素子 |
US7700366B2 (en) | 2003-12-04 | 2010-04-20 | Massachusetts Institute Of Technology | Fluorescent, semi-conductive polymers, and devices comprising them |
TW200541401A (en) | 2004-02-13 | 2005-12-16 | Idemitsu Kosan Co | Organic electroluminescent device |
JP4393249B2 (ja) * | 2004-03-31 | 2010-01-06 | 株式会社 日立ディスプレイズ | 有機発光素子,画像表示装置、及びその製造方法 |
DE102004038199A1 (de) | 2004-08-05 | 2006-03-16 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | LED mit niedriger Farbtemperatur |
KR100669757B1 (ko) * | 2004-11-12 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 |
US7597967B2 (en) | 2004-12-17 | 2009-10-06 | Eastman Kodak Company | Phosphorescent OLEDs with exciton blocking layer |
JP2006203172A (ja) * | 2004-12-22 | 2006-08-03 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
US20060134464A1 (en) | 2004-12-22 | 2006-06-22 | Fuji Photo Film Co. Ltd | Organic electroluminescent element |
JP2006269232A (ja) | 2005-03-23 | 2006-10-05 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
JP4764047B2 (ja) | 2005-03-31 | 2011-08-31 | キヤノン株式会社 | 発光素子 |
TWI471058B (zh) * | 2005-06-01 | 2015-01-21 | Univ Princeton | 螢光之經過濾電磷光作用 |
KR100713989B1 (ko) | 2005-07-15 | 2007-05-04 | 삼성에스디아이 주식회사 | 백색 유기 발광 소자 및 그의 제조방법 |
US7652283B2 (en) * | 2005-08-09 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Organometallic complex, and light emitting element and electronic appliance using the same |
JP2007073620A (ja) | 2005-09-05 | 2007-03-22 | Fujifilm Corp | 有機電界発光素子 |
US20070090756A1 (en) | 2005-10-11 | 2007-04-26 | Fujifilm Corporation | Organic electroluminescent element |
CN101321755B (zh) | 2005-12-01 | 2012-04-18 | 新日铁化学株式会社 | 有机电致发光元件用化合物及有机电致发光元件 |
KR101478004B1 (ko) | 2005-12-05 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기금속 착체, 및 이를 사용하는 발광 소자, 발광 장치 및 전자 기기 |
JP2007221097A (ja) | 2006-01-23 | 2007-08-30 | Fujifilm Corp | 有機電界発光素子 |
JP2007200938A (ja) | 2006-01-23 | 2007-08-09 | Fujifilm Corp | 有機電界発光素子 |
KR100792139B1 (ko) | 2006-02-06 | 2008-01-04 | 주식회사 엘지화학 | 전자주입층으로서 무기절연층을 이용한 유기발광소자 및이의 제조 방법 |
WO2007108403A1 (en) | 2006-03-21 | 2007-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Quinoxaline derivative, and light-emitting element, light-emitting device, electronic device using the quinoxaline derivative |
EP2254173B1 (en) | 2006-03-21 | 2013-09-18 | Semiconductor Energy Laboratory Co, Ltd. | Organometallic complex and light emitting element, light emitting device, and electronic device using the organometallic complex |
US7902742B2 (en) * | 2006-07-04 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
JP5238227B2 (ja) | 2006-12-27 | 2013-07-17 | 株式会社半導体エネルギー研究所 | 有機金属錯体および有機金属錯体を用いた発光素子、発光装置、並びに電子機器 |
JP5197058B2 (ja) | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
WO2008126879A1 (en) | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
JP2008288344A (ja) | 2007-05-16 | 2008-11-27 | Nippon Hoso Kyokai <Nhk> | 有機el素子 |
WO2008143113A1 (en) | 2007-05-18 | 2008-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Organometallic complex, composition and light emitting element including the organometallic complex |
US20100176380A1 (en) * | 2007-05-30 | 2010-07-15 | Ho Kuk Jung | Organic photoelectric device and material used therein |
US8034465B2 (en) | 2007-06-20 | 2011-10-11 | Global Oled Technology Llc | Phosphorescent oled having double exciton-blocking layers |
RU2010151920A (ru) | 2008-05-19 | 2012-06-27 | Шарп Кабусики Кайся (Jp) | Электролюминесцентный элемент, отображающее устройство и подсвечивающее устройство |
JP5325707B2 (ja) | 2008-09-01 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 発光素子 |
WO2010026859A1 (en) | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
JP5448680B2 (ja) | 2008-10-10 | 2014-03-19 | キヤノン株式会社 | 表示装置 |
JP5497284B2 (ja) | 2008-12-08 | 2014-05-21 | ユー・ディー・シー アイルランド リミテッド | 白色有機電界発光素子 |
US8778511B2 (en) * | 2008-12-12 | 2014-07-15 | Universal Display Corporation | OLED stability via doped hole transport layer |
US9040718B2 (en) | 2009-01-22 | 2015-05-26 | The University Of Rochester | Hybrid host materials for electrophosphorescent devices |
DE102009023155A1 (de) * | 2009-05-29 | 2010-12-02 | Merck Patent Gmbh | Materialien für organische Elektrolumineszenzvorrichtungen |
US8766269B2 (en) | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
KR20120103571A (ko) | 2009-10-05 | 2012-09-19 | 손 라이팅 리미티드 | 다층구조의 유기 장치 |
KR101352116B1 (ko) | 2009-11-24 | 2014-01-14 | 엘지디스플레이 주식회사 | 백색 유기 발광 소자 |
CN102648268B (zh) | 2009-12-07 | 2014-08-13 | 新日铁住金化学株式会社 | 有机发光材料及有机发光元件 |
JP2011146598A (ja) * | 2010-01-15 | 2011-07-28 | Toshiba Corp | 有機電界発光素子 |
JP2011153269A (ja) | 2010-01-28 | 2011-08-11 | Nara Institute Of Science & Technology | 白色発光性高分子複合材料およびその製造方法 |
TWI620747B (zh) * | 2010-03-01 | 2018-04-11 | 半導體能源研究所股份有限公司 | 雜環化合物及發光裝置 |
EP2366753B1 (en) | 2010-03-02 | 2015-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element and Lighting Device |
JP5324513B2 (ja) | 2010-03-31 | 2013-10-23 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光素子 |
JP2011213643A (ja) | 2010-03-31 | 2011-10-27 | Canon Inc | 銅錯体化合物及びこれを用いた有機発光素子 |
KR101135541B1 (ko) | 2010-04-01 | 2012-04-13 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 |
JP5602555B2 (ja) | 2010-05-17 | 2014-10-08 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器及び照明装置 |
WO2012035853A1 (ja) | 2010-09-13 | 2012-03-22 | 新日鐵化学株式会社 | 含窒素芳香族化合物、有機半導体材料及び有機電子デバイス |
CN103168043B (zh) | 2010-10-22 | 2016-08-03 | 株式会社半导体能源研究所 | 有机金属配合物、发光元件、发光装置、电子设备及照明装置 |
JP5769399B2 (ja) | 2010-10-22 | 2015-08-26 | 株式会社ブリヂストン | 重荷重用空気入りタイヤ |
DE202012013738U1 (de) | 2011-02-16 | 2020-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierendes Element |
KR102134951B1 (ko) | 2011-02-16 | 2020-07-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
WO2012111680A1 (en) | 2011-02-16 | 2012-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting body, light-emitting layer, and light-emitting device |
US8969854B2 (en) * | 2011-02-28 | 2015-03-03 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting layer and light-emitting element |
TWI831058B (zh) | 2011-02-28 | 2024-02-01 | 日商半導體能源研究所股份有限公司 | 發光元件 |
KR20190014600A (ko) | 2011-03-23 | 2019-02-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
DE112012007314B3 (de) | 2011-03-30 | 2018-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Lichtemittierendes Element |
CN103460805B (zh) | 2011-03-31 | 2016-02-24 | 松下电器产业株式会社 | 有机电致发光元件 |
KR102479832B1 (ko) | 2011-04-07 | 2022-12-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
JP2012225061A (ja) | 2011-04-20 | 2012-11-15 | Hitachi Constr Mach Co Ltd | 油圧式作業機械の作動油タンク |
KR102021273B1 (ko) * | 2011-05-27 | 2019-09-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 카바졸 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
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TWI455942B (zh) * | 2011-12-23 | 2014-10-11 | Semiconductor Energy Lab | 有機金屬錯合物,發光元件,發光裝置,電子裝置及照明裝置 |
KR101803537B1 (ko) | 2012-02-09 | 2017-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자 |
DE112013001439B4 (de) | 2012-03-14 | 2022-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
KR101419810B1 (ko) | 2012-04-10 | 2014-07-15 | 서울대학교산학협력단 | 엑시플렉스를 형성하는 공동 호스트를 포함하는 유기 발광 소자 |
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JP6158543B2 (ja) | 2012-04-13 | 2017-07-05 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、および照明装置 |
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JP5789585B2 (ja) | 2012-10-18 | 2015-10-07 | 株式会社Joled | 表示装置および電子機器 |
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JP2017152410A (ja) * | 2012-04-13 | 2017-08-31 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器及び照明装置 |
US10818861B2 (en) | 2012-04-13 | 2020-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
US11393997B2 (en) | 2012-04-13 | 2022-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, electronic device, and lighting device |
JP2013258402A (ja) * | 2012-05-18 | 2013-12-26 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、表示装置、電子機器及び照明装置 |
JP2019091895A (ja) * | 2012-05-18 | 2019-06-13 | 株式会社半導体エネルギー研究所 | 発光素子、照明装置、発光装置、表示装置、又は電子機器 |
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JP2014096557A (ja) | 2014-05-22 |
KR20130116198A (ko) | 2013-10-23 |
KR102057342B1 (ko) | 2019-12-18 |
DE102013205863B4 (de) | 2021-09-23 |
DE102013205863A1 (de) | 2013-10-31 |
US10818861B2 (en) | 2020-10-27 |
KR20210150333A (ko) | 2021-12-10 |
US20150270505A1 (en) | 2015-09-24 |
US20130270531A1 (en) | 2013-10-17 |
KR102168364B1 (ko) | 2020-10-22 |
US20200365819A1 (en) | 2020-11-19 |
KR20200121275A (ko) | 2020-10-23 |
KR102546999B1 (ko) | 2023-06-26 |
US20170179417A1 (en) | 2017-06-22 |
US9065066B2 (en) | 2015-06-23 |
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US11393997B2 (en) | 2022-07-19 |
US9595686B2 (en) | 2017-03-14 |
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