JP2010530640A - 2つのエキシトン阻止層を有するリン光oled - Google Patents
2つのエキシトン阻止層を有するリン光oled Download PDFInfo
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- JP2010530640A JP2010530640A JP2010513193A JP2010513193A JP2010530640A JP 2010530640 A JP2010530640 A JP 2010530640A JP 2010513193 A JP2010513193 A JP 2010513193A JP 2010513193 A JP2010513193 A JP 2010513193A JP 2010530640 A JP2010530640 A JP 2010530640A
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- layer
- phosphorescent
- exciton blocking
- emitting device
- organic light
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- 230000000903 blocking effect Effects 0.000 title claims abstract description 91
- 239000002019 doping agent Substances 0.000 claims abstract description 65
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- 239000000463 material Substances 0.000 claims description 144
- -1 2,2'-dimethyl [1,1'-biphenyl] -4,4'-diyl Chemical group 0.000 claims description 85
- 229910052799 carbon Inorganic materials 0.000 claims description 61
- 229910052741 iridium Inorganic materials 0.000 claims description 46
- 125000003118 aryl group Chemical group 0.000 claims description 42
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 37
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 30
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- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 125000006678 phenoxycarbonyl group Chemical group 0.000 description 1
- UYWQUFXKFGHYNT-UHFFFAOYSA-N phenylmethyl ester of formic acid Natural products O=COCC1=CC=CC=C1 UYWQUFXKFGHYNT-UHFFFAOYSA-N 0.000 description 1
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical class [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- 125000005496 phosphonium group Chemical group 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000002468 redox effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004365 square wave voltammetry Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 239000003115 supporting electrolyte Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical group 0.000 description 1
- 150000003513 tertiary aromatic amines Chemical class 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- ARZGWBJFLJBOTR-UHFFFAOYSA-N tetradecanamide Chemical compound CCCCCCCCCCCCCC(N)=O.CCCCCCCCCCCCCC(N)=O ARZGWBJFLJBOTR-UHFFFAOYSA-N 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LMYRWZFENFIFIT-UHFFFAOYSA-N toluene-4-sulfonamide Chemical compound CC1=CC=C(S(N)(=O)=O)C=C1 LMYRWZFENFIFIT-UHFFFAOYSA-N 0.000 description 1
- 125000002088 tosyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1C([H])([H])[H])S(*)(=O)=O 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-O triphenylphosphanium Chemical compound C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-O 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
a.アノードと;
b.カソードと;
c.アノードとカソードの間に配置された正孔輸送層と;
d.正孔輸送層とカソードの間に配置されていて、少なくとも1種類のホストと少なくとも1種類のリン光ドーパントとを含むリン光発光層と;
e.正孔輸送層とリン光発光層の間に配置されていて、そのリン光発光層に含まれるホストの三重項エネルギーよりも大きい三重項エネルギーを持つ第1のエキシトン阻止層と;
f.第1のエキシトン阻止層とリン光発光層の間に配置されていて、そのリン光発光層に接触し、第1のエキシトン阻止層の三重項エネルギーよりも小さい三重項エネルギーを持つ第2のエキシトン阻止層と
を備える有機発光デバイスによって達成される。
E(t) = 0.84×(E(ts) - E(gs)) + 0.35 (式1)
E(gs)とE(ts)の値は、ガウシャン98(ガウシャン社、ピッツバーグ、ペンシルヴェニア州)コンピュータ・プログラムに含まれているB3LYP法を利用して得られる。B3LYP法で使用される基本セットは、以下のように定義される。すなわち、MIDI!(MIDI!が定義されているすべての原子に対して用いる)と、6-31G*(6-31G*で定義されているが、MIDI!では定義されていないすべての原子に対して用いる)と、LACV3PまたはLANL2DZという基本セットと擬ポテンシャル(MIDI!または6-31G*で定義されていない原子に対して用いられ、LACV3Pのほうが好ましい)である。残るすべての原子に関しては、公開されている任意の基本セットと擬ポテンシャルを用いることができる。MIDI!、6-31G*、LANL2DZは、ガウシャン98コンピュータ・コードに含まれているものが用いられ、LACV3Pは、Jaguar4.1(シュレーディンガー社、ポートランド、オレゴン州)コンピュータ・コードに含まれているものが用いられる。それぞれの状態のエネルギーは、その状態の最小エネルギー配置で計算される。
LUMO(eV)= -4.8 - e×(SCEを基準にしたE還元 - SCEを基準にしたE還元 Fc) (式2)
HOMO(eV)= -4.8 - e×(SCEを基準にしたE酸化 - SCEを基準にしたE還元 Fc) (式3)
Q1とQ2は、独立に選択した芳香族第三級アミン部分であり;
Gは、炭素-炭素結合の結合基(例えば、アリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式(C):
R5とR6は、独立に選択したアリール基である。一実施態様では、R5とR6のうちの少なくとも一方は、多環式縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAREは、独立に選択したアリーレン基(例えばフェニレン部分、アントラセン部分)であり、
nは1〜4の整数であり、
Ar、R7、R8、R9は、独立に選択したアリール基である。
典型的な一実施態様では、Ar、R7、R8、R9のうちの少なくとも1つは多環式縮合環構造(例えばナフタレン)である。
R1〜R12は独立に、水素、または独立に選択した置換基(例えば1〜4個の炭素原子を含むアルキル基、アリール基、置換されたアリール基)を表わす。
1,1-ビス(4-ジ-p-トリルアミノフェニル)シクロヘキサン;
1,1-ビス(4-ジ-p-トリルアミノフェニル)-4-フェニルシクロヘキサン;
1,5-ビス[N-(1-ナフチル)-N-フェニルアミノ]ナフタレン;
2,6-ビス(ジ-p-トリルアミノ)ナフタレン;
2,6-ビス[ジ-(1-ナフチル)アミノ]ナフタレン;
2,6-ビス[N-(1-ナフチル)-N-(2-ナフチル)アミノ]ナフタレン;
2,6-ビス[N,N-ジ(2-ナフチル)アミノ]フルオレン;
4-(ジ-p-トリルアミノ)-4'-[4-(ジ-p-トリルアミノ)-スチリル]スチルベン;
4,4'-ビス(ジフェニルアミノ)クアドリフェニル;
4,4"-ビス[N-(1-アントリル)-N-フェニルアミノ]-p-テルフェニル;
4,4'-ビス[N-(1-コロネニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(1-ナフチル)-N-フェニルアミノ]ビフェニル(NPB);
4,4'-ビス[N-(1-ナフチル)-N-(2-ナフチル)アミノ]ビフェニル(TNB);
4,4"-ビス[N-(1-ナフチル)-N-フェニルアミノ]-p-テルフェニル;
4,4'-ビス[N-(2-ナフタセニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(2-ナフチル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(2-ペリレニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(2-フェナントリル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(2-ピレニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(3-アセナフテニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(3-メチルフェニル)-N-フェニルアミノ]ビフェニル(TPD);
4,4'-ビス[N-(8-フルオランテニル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス[N-(9-アントリル)-N-フェニルアミノ]ビフェニル;
4,4'-ビス{N-フェニル-N-[4-(1-ナフチル)-フェニル]アミノ}ビフェニル;
4,4'-ビス[N-フェニル-N-(2-ピレニル)アミノ]ビフェニル;
4,4',4"-トリス[(3-メチルフェニル)フェニルアミノ]トリフェニルアミン(m-TDATA);
ビス(4-ジメチルアミノ-2-メチルフェニル)フェニルメタン;
N-フェニルカルバゾール;
N,N'-ビス[4-([1,1'-ビフェニル]-4-イルフェニルアミノ)フェニル]-N,N'-ジ-1-ナフタレニル-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N'-ビス[4-(ジ-1-ナフタレニルアミノ)フェニル]-N,N'-ジ-1-ナフタレニル-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N'-ビス[4-[(3-メチルフェニル)フェニルアミノ]フェニル]-N,N'-ジフェニル-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N-ビス[4-(ジフェニルアミノ)フェニル]-N,N'-ジフェニル-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N'-ジ-1-ナフタレニル-N,N'-ビス[4-(1-ナフタレニルフェニルアミノ)フェニル]-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N'-ジ-1-ナフタレニル-N,N'-ビス[4-(2-ナフタレニルフェニルアミノ)フェニル]-[1,1'-ビフェニル]-4,4'-ジアミン;
N,N,N-トリ(p-トリル)アミン;
N,N,N',N'-テトラ-p-トリル-4,4'-ジアミノビフェニル;
N,N,N',N'-テトラフェニル-4,4'-ジアミノビフェニル;
N,N,N',N'-テトラ-1-ナフチル-4,4'-ジアミノビフェニル;
N,N,N',N'-テトラ-2-ナフチル-4,4'-ジアミノビフェニル;
N,N,N',N'-テトラ(2-ナフチル)-4,4"-ジアミノ-p-テルフェニル。
R1〜R4は独立に、アリール基の中から選択するが;
AREとR1〜R4は芳香族炭化水素縮合環を含まず;
nは1〜4の整数である。
R1〜R12は独立に、水素、または独立に選択した置換基(例えば1〜4個の炭素原子を含むアルキル基、アリール基、置換されたアリール基)を表わすが;
R1〜R12とAr5〜Ar10は芳香族炭化水素縮合環を含んでいない。
4,4',4"-トリス[(3-メチルフェニル)フェニルアミノ]トリフェニルアミン(MTDATA);
4,4',4"-トリス(N,N-ジフェニル-アミノ)トリフェニルアミン(TDATA);
N,N-ビス[2,5-ジメチル-4-[(3-メチルフェニル)フェニルアミノ]フェニル]-2,5-ジメチル-N'-(3-メチルフェニル)-N'-フェニル-1,4-ベンゼンジアミン。
1,1-ビス(4-(N,N-ジ-p-トリルアミノ)フェニル)シクロヘキサン(TAPC);
1,1-ビス(4-(N,N-ジ-p-トリルアミノ)フェニル)シクロペンタン;
4,4'-(9H-フルオレン-9-イリデン)ビス[N,N-ビス(4-メチルフェニル)-]ベンゼンアミン;
1,1-ビス(4-(N,N-ジ-p-トリルアミノ)フェニル)-4-フェニルシクロヘキサン;
1,1-ビス(4-(N,N-ジ-p-トリルアミノ)フェニル)-4-メチルシクロヘキサン;
1,1-ビス(4-(N,N-ジ-p-トリルアミノ)フェニル)-3-フェニルプロパン;
ビス[4-(N,N-ジエチルアミノ)-2-メチルフェニル](4-メチルフェニル)メタン;
ビス[4-(N,N-ジエチルアミノ)-2-メチルフェニル](4-メチルフェニル)エタン;
4-(4-ジエチルアミノフェニル)トリフェニルメタン;
4,4'-ビス(4-ジエチルアミノフェニル)ジフェニルメタン。
Qは、N、C、アリール基、置換されたアリール基のいずれかであり;
R1は、フェニル、置換されたフェニル、ビフェニル、置換されたビフェニル、アリール、置換されたアリールのいずれかであり;
R2〜R9は独立に、水素、アルキル、フェニル、置換されたフェニル、アリールアミン、カルバゾール、置換されたカルバゾールのいずれかだが;R2〜R9は芳香族炭化水素縮合環を含んでいない。
Qは、N、C、アリール、置換されたアリールのいずれかであり;
R2〜R9は独立に、水素、アルキル、フェニル、置換されたフェニル、アリールアミン、カルバゾール、置換されたカルバゾールのいずれかだが;R2〜R9は芳香族炭化水素縮合環を含んでいない。
4-(9H-カルバゾル-9-イル)-N,N-ビス[4-(9H-カルバゾル-9-イル)フェニル]-ベンゼンアミン(TCTA);
4-(3-フェニル-9H-カルバゾル-9-イル)-N,N-ビス[4-(3-フェニル-9H-カルバゾル-9-イル)フェニル]-ベンゼンアミン;
9,9'-[5'-[4-(9H-カルバゾル-9-イル)フェニル][1,1':3',1"-テルフェニル]-4,4"-ジイル]ビス-9H-カルバゾール。
Qは、フェニル基、置換されたフェニル基、ビフェニル基、置換されたビフェニル基、アリール基、置換されたアリール基のいずれかであり;
R1〜R8は独立に、水素、アルキル、フェニル、置換されたフェニル、アリールアミン、カルバゾール、置換されたカルバゾールのいずれかだが;
R1〜R8は芳香族炭化水素縮合環を含んでいない。
9,9'-(2,2'-ジメチル[1,1'-ビフェニル]-4,4'-ジイル)ビス-9H-カルバゾール(CDBP);
9,9'-[1,1'-ビフェニル]-4,4'-ジイルビス-9H-カルバゾール(CBP);
9,9'-(1,3-フェニレン)ビス-9H-カルバゾール(mCP);
9,9'-(1,4-フェニレン)ビス-9H-カルバゾール;
9,9',9"-(1,3,5-ベンゼントリイル)トリス-9H-カルバゾール;
9,9'-(1,4-フェニレン)ビス[N,N,N',N'-テトラフェニル-9H-カルバゾール-3,6-ジアミン];
9-[4-(9H-カルバゾル-9-イル)フェニル]-N,N-ジフェニル-9H-カルバゾール-3-アミン;
9,9'-(1,4-フェニレン)ビス[N,N-ジフェニル-9H-カルバゾール-3-アミン];
9-[4-(9H-カルバゾル-9-イル)フェニル]-N,N,N',N'-テトラフェニル-9H-カルバゾール-3,6-ジアミン;
9-フェニル-9H-カルバゾール。
Zは独立に、O、NR、Sのいずれかであり;
RとR'は個別に、水素;炭素が1〜24個のアルキル(例えばプロピル、t-ブチル、ペプチルなど);アリールまたはヘテロ原子置換アリールのうちで炭素原子が5〜20個のもの(例えばフェニル、ナフチル、フリル、チエニル、ピリジル、キノリニルや、他の複素環系);ハロ(例えばクロロ、フルオロ);縮合芳香族環を完成させるのに必要な原子のいずれかであり;
Xは、炭素、アルキル、アリール、置換されたアルキル、置換されたアリールのいずれかを含む結合単位であり、多数のベンズアゾールを共役または非共役に結合させる。
2,4,6-トリス(ジフェニルアミノ)-1,3,5-トリアジン;
2,4,6-トリカルバゾロ-1,3,5-トリアジン;
2,4,6-トリス(N-フェニル-2-ナフチルアミノ)-1,3,5-トリアジン;
2,4,6-トリス(N-フェニル-1-ナフチルアミノ)-1,3,5-トリアジン;
4,4',6,6'-テトラフェニル-2,2'-ビ-1,3,5-トリアジン;
2,4,6-トリス[(1,1':3',1"-テルフェニル]-5'-イル)-1,3,5-トリアジン。
Aは、置換された複素環または置換されていない複素環で少なくとも1個のN原子を含むものであり;
Bは、置換された芳香族環、置換された複素芳香族環、置換されていない芳香族環、置換されていない複素芳香族環、Mに結合したビニルの炭素を含む環のいずれかであり;
X-Yは、アニオン性二座リガンドであり;
mは1〜3の整数、かつnは0〜2の整数であって、M=RhまたはIrのときにm+n=3であるか;
mは1〜2の整数、かつnは0〜1の整数であって、M=PtまたはPdのときにm+n=2である。
MはPtまたはPdであり;
R1〜R7は、水素または独立に選択した置換基を表わすが、R1とR2、R2とR3、R3とR4、R4とR5、R5とR6、R6とR7が合わさって環基を形成してもよく;
R8〜R14は、水素または独立に選択した置換基を表わすが、R8とR9、R9とR10、R10とR11、R11とR12、R12とR13、R13とR14が合わさって環基を形成してもよく;
Eは、以下に示すもの:
ここにRとR'は、水素または独立に選択した置換基を表わすが、RとR'が合わさって環基を形成してもよい。
R1〜R7は、水素または独立に選択した置換基を表わすが、R1とR2、R2とR3、R3とR4、R4とR5、R5とR6、R6とR7が合わさって環基を形成してもよく;
R8〜R14は、水素または独立に選択した置換基を表わすが、R8とR9、R9とR10、R10とR11、R11とR12、R12とR13、R13とR14が合わさって環基を形成してもよく;
Z1〜Z5は、水素または独立に選択した置換基を表わすが、Z1とZ2、Z2とZ3、Z3とZ4、Z4とZ5が合わさって環基を形成してもよい。
Mは金属を表わし;
nは1〜4の整数であり;
Zは、現われるごとに独立に、縮合した少なくとも2つの芳香族環を有する核を完成させる原子を表わす。
R-1:アルミニウムトリスオキシン[別名、トリス(8-キノリノラト)アルミニウム(III)またはAlqまたはAlq3];
R-2:マグネシウムビスオキシン[別名、ビス(8-キノリノラト)マグネシウム(II)];
R-3:ビス[ベンゾ{f}-8-キノリノラト]亜鉛(II);
R-4:ビス(2-メチル-8-キノリノラト)アルミニウム(III)-μ-オキソ-ビス(2-メチル-8-キノリノラト)アルミニウム(III);
R-5:インジウムトリスオキシン[別名、トリス(8-キノリノラト)インジウム];
R-6:アルミニウムトリス(5-メチルオキシン)[別名、トリス(5-メチル-8-キノリノラト)アルミニウム(III)];
R-7:リチウムオキシン[別名、(8-キノリノラト)リチウム(I)];
R-8:ガリウムオキシン[別名、トリス(8-キノリノラト)ガリウム(III)];
R-9:ジルコニウムオキシン[別名、テトラ(8-キノリノラト)ジルコニウム(IV)];
R-a-1:アルミニウム(III)ビス(2-メチル-8-ヒドロキシキノリン)-4-フェニルフェノレート[別名、Balq]。
jは0〜3であり、kは1または2であり;
Mは、アルカリ金属またはアルカリ土類金属を表わし;
mとnは、上記錯体上の電荷が中性となるように独立に選択した整数である。
a)N,N'-ジ-1-ナフチル-N,N'-ジフェニル-4,4'-ジアミノビフェニル(NPB)を含む厚さ95nmのHTL;
b)2,2',2"-(1,3,5-フェニレン)トリス[1-フェニル-1H-ベンゾイミダゾール](TPBI)を含む厚さ20nmのLEL;
e)4,7-ジフェニル-1,10-フェナントロリン(Bphen)を含む厚さ40nmのETL;
f)LiFからなる厚さ1nmのEIL;
g)Alを含む厚さ約100nmのカソード。
a)NPBを含む厚さ85nmのHTL;
b)4-(9H-カルバゾル-9-イル)-N,N-ビス[4-(9H-カルバゾル-9-イル)フェニル]-ベンゼンアミン(TCTA)を含む厚さ10nmの第1のエキシトン阻止層(第1のEXBL);
d)TPBIを含む厚さ20nmのLEL;
e)Bphenを含む厚さ40nmのETL;
f)LiFからなる厚さ1nmのEIL;
g)Alを含む厚さ約100nmのカソード。
a)NPBを含む厚さ75nmのHTL;
b)TCTAを含む厚さ10nmの第1のEXBL;
c)9,9'-[1,1'-ビフェニル]-4,4'-ジイルビス-9H-カルバゾール(CBP)を含む厚さ10nmの第2のEXBL;
d)TPBIを含む厚さ20nmのLEL;
e)Bphenを含む厚さ40nmのETL;
f)LiFからなる厚さ1nmのEIL;
g)Alを含む厚さ約100nmのカソード。
a)ヘキサアザトリフェニレンヘキサカルボニトリル(HAT-CN)を含む厚さ10nmのHIL;
b)NPBを含む厚さ75nmのHTL;
c)TCTAを含む厚さ10nmの第1のEXBL;
e)7体積%のIr(ppy)2(cou1)をドープしたBphenを含む厚さ20nmのLEL;
f)Bphenを含む厚さ50nmのETL;
g)一般式(T-1)の化合物を含む厚さ2nmのEIL;
h)Alを含む厚さ約100nmのカソード。
a)HAT-CNを含む厚さ10nmのHIL;
b)NPBを含む厚さ75nmのHTL;
c)TCTAを含む厚さ10nmの第1のEXBL;
d)CBPを含む厚さ8nmの第2のEXBL;
e)7体積%のIr(ppy)2(cou1)をドープしたBphenを含む厚さ20nmのLEL;
f)Bphenを含む厚さ50nmのETL;
g)一般式(T-1)の化合物を含む厚さ2nmのEIL;
h)Alを含む厚さ約100nmのカソード。
a)HAT-CNを含む厚さ10nmのHIL;
b)NPBを含む厚さ75nmのHTL;
c)TCTAを含む厚さ10nmの第1のEXBL;
e)7体積%のIr(ppy)2(cou1)をドープしたTPBIを含む厚さ20nmのLEL;
f)Bphenを含む厚さ50nmのETL;
g)一般式(T-1)の化合物を含む厚さ2nmのEIL;
h)Alを含む厚さ約100nmのカソード。
a)HAT-CNを含む厚さ10nmのHIL;
b)NPBを含む厚さ75nmのHTL;
c)TCTAを含む厚さ10nmの第1のEXBL;
d)CBPを含む厚さ2nmの第2のEXBL;
e)7体積%のIr(ppy)2(cou1)をドープしたTPBIを含む厚さ20nmのLEL;
f)Bphenを含む厚さ50nmのETL;
g)一般式(T-1)の化合物を含む厚さ2nmのEIL;
h)Alを含む厚さ約100nmのカソード。
110 アノード
120 正孔注入層(HIL)
130 正孔輸送層(HTL)
141 第1のエキシトン阻止層(第1のEXBL)
142 第2のエキシトン阻止層(第2のEXBL)
150 リン光発光層(LEL)
170 電子輸送層(ETL)
180 電子注入層(EIL)
190 カソード
200 有機発光デバイス(OLED)
300 有機発光デバイス(OLED)
400 有機発光デバイス(OLED)
440 従来のOLEDのエキシトン阻止層
Claims (23)
- a.アノードと;
b.カソードと;
c.上記アノードと上記カソードの間に配置された正孔輸送層と;
d.上記正孔輸送層と上記カソードの間に配置されていて、少なくとも1種類のホストと少なくとも1種類のリン光ドーパントとを含むリン光発光層と;
e.上記正孔輸送層と上記リン光発光層の間に配置されていて、そのリン光発光層に含まれるホストの三重項エネルギーよりも大きい三重項エネルギーを持つ第1のエキシトン阻止層と;
f.上記第1のエキシトン阻止層と上記リン光発光層の間に配置されていて、そのリン光発光層に接触し、上記第1のエキシトン阻止層の三重項エネルギーよりも小さい三重項エネルギーを持つ第2のエキシトン阻止層と
を備える有機発光デバイス。 - 上記第2のエキシトン阻止層がエキシトン阻止効果を増大させて上記正孔輸送層からの発光をなくす、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層が、上記リン光発光層に含まれるドーパントの三重項エネルギーよりも大きい三重項エネルギーを持つ、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層が、上記第1のエキシトン阻止層の酸化電位よりも小さくない酸化電位を持つ、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層が、上記リン光発光層に含まれるドーパントの酸化電位よりも小さい酸化電位を持つ、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層が、上記リン光発光層に含まれるドーパントの還元電位よりも小さい還元電位を持つ、請求項1に記載の有機発光デバイス。
- 上記第1のエキシトン阻止層と上記第2のエキシトン阻止層が、それぞれ1nm〜50nmの範囲の厚さである、請求項1に記載の有機発光デバイス。
- 上記第1のエキシトン阻止層と上記第2のエキシトン阻止層が、それぞれ2nm〜20nmの範囲の厚さである、請求項1に記載の有機発光デバイス。
- 上記第1のエキシトン阻止層が正孔輸送材料を含む、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層が正孔輸送材料を含む、請求項1に記載の有機発光デバイス。
- 上記第2のエキシトン阻止層に含まれるカルバゾール誘導体の選択が、9,9'-[1,1'-ビフェニル]-4,4'-ジイルビス-9H-カルバゾール(CBP)、9,9'-(2,2'-ジメチル[1,1'-ビフェニル]-4,4'-ジイル)ビス-9H-カルバゾール(CDBP)、9,9'-(1,4-フェニレン)ビス-9H-カルバゾールの中からなされる、請求項13に記載の有機発光デバイス。
- 上記リン光発光層に含まれるホストが電子輸送材料を含む、請求項1に記載の有機発光デバイス。
- 上記ベンズアゾール誘導体が、2,2',2"-(1,3,5-フェニレン)トリス[1-フェニル-1H-ベンゾイミダゾール](TPBI)である、請求項16に記載の有機発光デバイス。
- 上記アルミニウム錯体またはガリウム錯体が、アルミニウム(III)ビス(2-メチル-8-ヒドロキシキノリン)-4-フェニルフェノレート[別名Balq]とガリウムオキシン[別名トリス(8-キノリノラト)ガリウム(III)]を含む、請求項18に記載の有機発光デバイス。
- 2つの発光層を含む、請求項1に記載の有機発光デバイス。
- 上記2つの発光層が実質的に異なる色の光を出す、請求項20に記載の有機発光デバイス。
- 上記リン光発光層に含まれる上記リン光ドーパントの選択が、トリス(1-フェニルイソキノリン)イリジウム(III)(Ir(piq)3)、Ir(ppy)2(cou1)、Ir(cou2)2ppy、トリス(2-フェニルピリジン)イリジウム(III)(Ir(ppy)3)の中からなされる、請求項1に記載の有機発光デバイス。
- 白色光を発生させる、請求項1に記載の有機発光デバイス。
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PCT/US2008/006962 WO2008156554A1 (en) | 2007-06-20 | 2008-06-03 | Phosphorescent oled having double exciton-blocking layers |
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JP2006510212A (ja) * | 2002-12-13 | 2006-03-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 三重項エミッタ錯体を有する有機エレクトロルミネッセント構成体 |
JP2009076528A (ja) * | 2007-09-19 | 2009-04-09 | Seiko Epson Corp | 有機el装置及び電子機器 |
US8105701B2 (en) | 2004-02-13 | 2012-01-31 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device |
WO2012039213A1 (ja) * | 2010-09-24 | 2012-03-29 | 株式会社日立製作所 | 有機発光装置及びこれを用いた光源装置 |
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CN101679858A (zh) | 2010-03-24 |
EP2158290B1 (en) | 2015-11-11 |
TWI379448B (en) | 2012-12-11 |
KR101182701B1 (ko) | 2012-09-13 |
CN101679858B (zh) | 2013-03-27 |
US8034465B2 (en) | 2011-10-11 |
US20080315753A1 (en) | 2008-12-25 |
EP2158290A1 (en) | 2010-03-03 |
WO2008156554A1 (en) | 2008-12-24 |
KR20100022985A (ko) | 2010-03-03 |
JP5643086B2 (ja) | 2014-12-17 |
TW200908412A (en) | 2009-02-16 |
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