JP2010530082A - 薄型の側面発光ledを用いた、薄いフラッシュ又は薄いビデオ録画用ライト - Google Patents
薄型の側面発光ledを用いた、薄いフラッシュ又は薄いビデオ録画用ライト Download PDFInfo
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- JP2010530082A JP2010530082A JP2010511774A JP2010511774A JP2010530082A JP 2010530082 A JP2010530082 A JP 2010530082A JP 2010511774 A JP2010511774 A JP 2010511774A JP 2010511774 A JP2010511774 A JP 2010511774A JP 2010530082 A JP2010530082 A JP 2010530082A
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- BZTYNSQSZHARAZ-UHFFFAOYSA-N 2,4-dichloro-1-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=C(Cl)C=C1Cl BZTYNSQSZHARAZ-UHFFFAOYSA-N 0.000 description 4
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Stroboscope Apparatuses (AREA)
- Planar Illumination Modules (AREA)
- Studio Devices (AREA)
- Details Of Cameras Including Film Mechanisms (AREA)
- Camera Bodies And Camera Details Or Accessories (AREA)
- Structure And Mechanism Of Cameras (AREA)
Abstract
Description
Claims (17)
- 第1のタイプの第1の半導体層と、第2のタイプの第2の半導体層と、前記第1の半導体層及び前記第2の半導体層の間にあり、主面をもつ活性層と、を有する側面発光の、レーザー発振ではない、発光ダイオード(LED)であって、前記LEDがフリップチップ構造であるよう、前記第1の半導体層に接触する第1の電極及び前記第2の半導体層に接触する第2の電極を当該LEDの第1の側に有する、発光ダイオードLEDと、
- 前記LEDの第2の側にあり、前記活性層の前記主面と実質的に平行な反射器であって、当該反射器に当たる全ての光が、実質的に前記LEDへと戻るよう導かれ、前記LEDは、側面発光レンズを使用することなく、前記LEDの側面のみから実質的に光を発する、反射器と、
- 光が発される上面、及び反射性の底面をもち、側面発光の前記LEDが置かれる少なくとも一つの開口部をもち、これにより前記LEDの側面から発された光が、光学的に結合されるライトガイドと、
- カメラにより対象物の画像を撮影するために、当該対象物を照明する目的で前記LEDにパワーを供給するために、前記LEDの前記第1の電極及び前記第2の電極に電気的に接続されているドライバと、
を有し、前記LED及びコントローラが、カメラハウジング内に取り付けられている、対象物を照明するためのカメラの照明装置。 - 前記カメラは静止画像カメラであり、前記ドライバは、前記対象物の静止画像を撮るためにフラッシュを出力するよう前記LEDを制御する、請求項1に記載の照明装置。
- 前記カメラはビデオ・カメラであり、前記ドライバは、前記対象物のビデオ録画をするために光を連続的に出力するよう前記LEDを制御する、請求項1に記載の照明装置。
- 前記活性層及び前記反射器の底面が、前記ライトガイドの上面と底面との間に位置しているか、又は両者と接して位置していることさえある、請求項1に記載の照明装置。
- 前記ライトガイドは2mm未満の厚みをもつ、請求項1に記載の照明装置。
- 前記LEDは2mm未満の厚みをもつ、請求項1に記載の照明装置。
- 前記LEDが更に、前記反射器と前記第2の半導体層との間に蛍光層を有する、請求項1に記載の照明装置。
- 前記蛍光層を含む前記LEDが白色光を発する、請求項7に記載の照明装置。
- 前記LEDの発光側は、0.4mm未満の高さをもつ、請求項1に記載の照明装置。
- 前記活性層が青色光を発する、請求項1に記載の照明装置。
- 前記ライトガイドの前記底面が、光を前記上面の方へと散乱させる、請求項1に記載の照明装置。
- 前記ライトガイドの前記上面は、25mm2よりも大きな発光面積をもつ、請求項1に記載の照明装置。
- 前記ライトガイドの前記上面は、50mm2よりも大きな発光面積をもつ、請求項1に記載の照明装置。
- 前記照明装置が、フラッシュ・モジュールである、請求項1に記載の照明装置。
- 前記反射器が、エアギャップなしで前記LEDの残余側に取り付けられている、請求項1に記載の照明装置。
- 複数の側面発光LEDを、前記ライトガイドのそれぞれの開口部に更に有する、請求項1に記載の照明装置。
- 前記カメラが携帯電話用カメラである、請求項1に記載の照明装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/763,311 | 2007-06-14 | ||
US11/763,311 US9046634B2 (en) | 2007-06-14 | 2007-06-14 | Thin flash or video recording light using low profile side emitting LED |
PCT/IB2008/052347 WO2008152610A2 (en) | 2007-06-14 | 2008-06-13 | Thin flash or video recording light using low profile side emitting led |
Publications (2)
Publication Number | Publication Date |
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JP2010530082A true JP2010530082A (ja) | 2010-09-02 |
JP5674464B2 JP5674464B2 (ja) | 2015-02-25 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010511774A Active JP5674464B2 (ja) | 2007-06-14 | 2008-06-13 | 薄型の側面発光ledを用いた、薄いフラッシュ又は薄いビデオ録画用ライト |
Country Status (8)
Country | Link |
---|---|
US (1) | US9046634B2 (ja) |
EP (1) | EP2165373B1 (ja) |
JP (1) | JP5674464B2 (ja) |
KR (1) | KR101517352B1 (ja) |
CN (1) | CN101743646B (ja) |
RU (1) | RU2010100962A (ja) |
TW (1) | TWI455347B (ja) |
WO (1) | WO2008152610A2 (ja) |
Cited By (6)
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JP2013156347A (ja) * | 2012-01-27 | 2013-08-15 | Hamamatsu Photonics Kk | 撮像装置及び撮像装置の製造方法 |
JP2015053521A (ja) * | 2009-03-04 | 2015-03-19 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | コンプライアントなボンディング構造を有する装置 |
JP2015097235A (ja) * | 2013-11-15 | 2015-05-21 | 日亜化学工業株式会社 | 半導体発光装置およびその製造方法 |
JP2018107279A (ja) * | 2016-12-26 | 2018-07-05 | 日亜化学工業株式会社 | 発光装置および集積型発光装置 |
US10142529B2 (en) | 2013-07-12 | 2018-11-27 | Hamamatsu Photonics K.K. | Imaging apparatus and method for manufacturing imaging apparatus |
US11067250B2 (en) | 2016-12-28 | 2021-07-20 | Nichia Corporation | Light emitting device and integrated light emitting device |
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US8080828B2 (en) * | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
US7538359B2 (en) * | 2007-08-16 | 2009-05-26 | Philips Lumiled Lighting Company, Llc | Backlight including side-emitting semiconductor light emitting devices |
CA2765106C (en) | 2009-06-10 | 2017-02-14 | Rensselaer Polytechnic Institute | Solid state light source light bulb |
TW201109814A (en) * | 2009-09-11 | 2011-03-16 | Zonbest Technology Co Ltd | Miniature xenon flash module and its manufacturing method thereof |
WO2011056675A1 (en) * | 2009-11-03 | 2011-05-12 | The Regents Of The University Of California | Superluminescent diodes by crystallographic etching |
GB2475705A (en) * | 2009-11-26 | 2011-06-01 | Sharp Kk | Camera flash |
DE102010010750A1 (de) * | 2010-03-09 | 2011-09-15 | Thomas Hofmann | Multilayersubstrat mit flächigem Leuchtkörper |
US8273589B2 (en) * | 2010-03-19 | 2012-09-25 | Micron Technology, Inc. | Light emitting diodes and methods for manufacturing light emitting diodes |
EP2447746A1 (en) | 2010-10-28 | 2012-05-02 | Koninklijke Philips Electronics N.V. | Lighting device with waveguide plate |
KR101873996B1 (ko) * | 2010-12-14 | 2018-08-02 | 엘지이노텍 주식회사 | 광원 장치 및 이를 포함하는 백라이트 유닛, 표시 장치 |
WO2013118072A2 (en) * | 2012-02-10 | 2013-08-15 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
WO2013120228A1 (zh) * | 2012-02-17 | 2013-08-22 | 迟志均 | 带闪光灯功能的机头灯 |
JP5505446B2 (ja) * | 2012-03-19 | 2014-05-28 | ウシオ電機株式会社 | フラッシュランプ |
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DE102013104840A1 (de) * | 2013-05-10 | 2014-11-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen |
US20170068038A1 (en) * | 2013-09-23 | 2017-03-09 | Glo Ab | Integrated back light unit |
DE102014105839A1 (de) | 2014-04-25 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US9794462B2 (en) * | 2015-03-31 | 2017-10-17 | Microscan Systems, Inc. | Illumination system with side-emitting illumination, targeting, and confirmation |
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Also Published As
Publication number | Publication date |
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RU2010100962A (ru) | 2011-07-20 |
US9046634B2 (en) | 2015-06-02 |
WO2008152610A2 (en) | 2008-12-18 |
EP2165373B1 (en) | 2018-09-05 |
KR101517352B1 (ko) | 2015-05-04 |
KR20100049023A (ko) | 2010-05-11 |
TWI455347B (zh) | 2014-10-01 |
CN101743646A (zh) | 2010-06-16 |
TW200919784A (en) | 2009-05-01 |
WO2008152610A3 (en) | 2009-02-05 |
JP5674464B2 (ja) | 2015-02-25 |
CN101743646B (zh) | 2012-07-18 |
US20080308824A1 (en) | 2008-12-18 |
EP2165373A2 (en) | 2010-03-24 |
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