JP2010509774A - Euv光の透過率が改善されたeuvペリクル - Google Patents
Euv光の透過率が改善されたeuvペリクル Download PDFInfo
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- JP2010509774A JP2010509774A JP2009536317A JP2009536317A JP2010509774A JP 2010509774 A JP2010509774 A JP 2010509774A JP 2009536317 A JP2009536317 A JP 2009536317A JP 2009536317 A JP2009536317 A JP 2009536317A JP 2010509774 A JP2010509774 A JP 2010509774A
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- euv
- airgel
- pellicle
- film
- mask
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- 238000002834 transmittance Methods 0.000 title claims abstract description 12
- 238000001459 lithography Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000010521 absorption reaction Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 27
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004964 aerogel Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000006262 metallic foam Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
fabrication)中のEUVリソグラフィ露光装置におけるリソグラフィプロセスにおいて、リソグラフィマスク104にあるパターンを半導体ウェハ112に転写するために使用されうる。
Claims (10)
- リソグラフィマスクを保護するための極紫外(EUV)ペリクル(106)であって、
エアロゲル膜(122)と、
前記リソグラフィマスクに前記エアロゲル膜を取り付けるためのフレーム(124)とを備え、
前記エアロゲル膜は、前記ペリクルのEUV光の透過率を増加させるEUVペリクル。 - 請求項1に記載のEUVペリクルによって作製された半導体ダイ(114)。
- 前記半導体ダイはマイクロプロセッサのダイである請求項2に記載の半導体ダイ。
- 前記エアロゲル膜はエアロゲルの形態の材料を含み、前記材料はEUVの吸収が低くなるように選択される請求項1に記載のEUVペリクル。
- 半導体ダイ(114)の作製方法であって、
リソグラフィマスク(104)を保護するために、エアロゲル膜と、前記リソグラフィマスクに前記エアロゲル膜を取り付けるためのフレームとを有し、前記エアロゲル膜は、前記ペリクルのEUV光の透過率を増加させるペリクル(106)を使用する極紫外(EUV)リソグラフィ印刷機を使用してウェハ(112)を加工するステップ(202)と、
前記半導体ダイ(114)を分離するために前記ウェハをダイシングするステップ(204)と、を含む方法。 - 前記エアロゲル膜はエアロゲルの形態の材料を含み、前記材料はEUVの吸収が低くなるように選択される請求項5に記載の方法。
- 前記材料はシリコンを含む請求項6に記載の方法。
- 前記材料は金属を含む請求項6に記載の方法。
- 前記金属はルテニウムを含む請求項8に記載の方法。
- 前記半導体ダイはマイクロプロセッサのダイである請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/595,085 US7723704B2 (en) | 2006-11-10 | 2006-11-10 | EUV pellicle with increased EUV light transmittance |
PCT/US2007/023645 WO2008060465A1 (en) | 2006-11-10 | 2007-11-09 | Euv pellicle with increased euv light transmittance |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010509774A true JP2010509774A (ja) | 2010-03-25 |
Family
ID=39146920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009536317A Ceased JP2010509774A (ja) | 2006-11-10 | 2007-11-09 | Euv光の透過率が改善されたeuvペリクル |
Country Status (8)
Country | Link |
---|---|
US (1) | US7723704B2 (ja) |
JP (1) | JP2010509774A (ja) |
KR (1) | KR101321961B1 (ja) |
CN (1) | CN101583906B (ja) |
DE (1) | DE112007002735B4 (ja) |
GB (1) | GB2456980B (ja) |
TW (1) | TWI421628B (ja) |
WO (1) | WO2008060465A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010541267A (ja) * | 2007-10-02 | 2010-12-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学薄膜素子 |
WO2014142125A1 (ja) * | 2013-03-15 | 2014-09-18 | 旭化成イーマテリアルズ株式会社 | ペリクル膜及びペリクル |
JP2014229786A (ja) * | 2013-05-23 | 2014-12-08 | 株式会社東芝 | 露光方法、反射型マスクおよび半導体装置の製造方法 |
Families Citing this family (48)
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US7767985B2 (en) * | 2006-12-26 | 2010-08-03 | Globalfoundries Inc. | EUV pellicle and method for fabricating semiconductor dies using same |
US8018578B2 (en) * | 2007-04-19 | 2011-09-13 | Asml Netherlands B.V. | Pellicle, lithographic apparatus and device manufacturing method |
EP2051139B1 (en) | 2007-10-18 | 2010-11-24 | Shin-Etsu Chemical Co., Ltd. | Pellicle and method for manufacturing the same |
JP5394808B2 (ja) | 2009-04-22 | 2014-01-22 | 信越化学工業株式会社 | リソグラフィ用ペリクルおよびその製造方法 |
NL2004453A (en) * | 2009-04-24 | 2010-10-26 | Asml Netherlands Bv | Lithographic apparatus having a substrate support with open cell plastic foam parts. |
KR101179264B1 (ko) | 2009-06-25 | 2012-09-13 | 에스케이하이닉스 주식회사 | 액정 펠리클을 구비하는 포토마스크 및 이를 이용한 패턴 형성방법 |
KR101968675B1 (ko) * | 2010-06-25 | 2019-04-12 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 방법 |
US20130250260A1 (en) * | 2012-03-23 | 2013-09-26 | Globalfoundries Inc. | Pellicles for use during euv photolithography processes |
CL2013000743A1 (es) | 2013-03-19 | 2013-10-04 | Lavin Rodrigo Prado | Metodo para mejorar la transmision en un 5% o mas, de rayos ultravioletas en torno a una lampara de desinfeccion de cuarzo, que comprende la utilizacion de cualquier gas, diferente al aire ambiente, en el espacio interior del cuarzo que cubre la lampara uv. |
US9182686B2 (en) | 2013-06-13 | 2015-11-10 | Globalfoundries U.S. 2 Llc | Extreme ultraviolet radiation (EUV) pellicle formation apparatus |
US9057957B2 (en) | 2013-06-13 | 2015-06-16 | International Business Machines Corporation | Extreme ultraviolet (EUV) radiation pellicle formation method |
KR101552940B1 (ko) | 2013-12-17 | 2015-09-14 | 삼성전자주식회사 | 흑연-함유 박막을 포함하는 극자외선 리소그래피용 펠리클 막 |
WO2015112310A1 (en) * | 2014-01-27 | 2015-07-30 | Luxel Corporation | A monolithic mesh-supported euv membrane |
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US9547232B2 (en) * | 2014-12-04 | 2017-01-17 | Globalfoundries Inc. | Pellicle with aerogel support frame |
KR102345543B1 (ko) * | 2015-08-03 | 2021-12-30 | 삼성전자주식회사 | 펠리클 및 이를 포함하는 포토마스크 조립체 |
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KR102502727B1 (ko) | 2015-11-09 | 2023-02-23 | 삼성전자주식회사 | 레티클 및 그를 포함하는 노광 장치 |
JP6004126B1 (ja) * | 2016-03-02 | 2016-10-05 | レーザーテック株式会社 | 検査装置、及びそのフォーカス調整方法 |
EP4202545A1 (en) * | 2016-04-25 | 2023-06-28 | ASML Netherlands B.V. | A membrane for euv lithography |
KR101940791B1 (ko) | 2017-05-19 | 2019-01-21 | 주식회사 에프에스티 | 유기물 희생층 기판을 이용한 초극자외선용 펠리클의 제조방법 |
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Citations (4)
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JP2000147750A (ja) * | 1998-11-18 | 2000-05-26 | Mitsui Chemicals Inc | ペリクル |
JP2001059901A (ja) * | 1999-07-02 | 2001-03-06 | Asm Lithography Bv | 極端紫外光学素子用のキャッピング層 |
JP2005043895A (ja) * | 2003-07-25 | 2005-02-17 | Asml Netherlands Bv | フィルタ・ウィンドウ、リソグラフ投影装置、フィルタ・ウィンドウの製造方法、デバイスの製造方法、及びそれらによって製造されたデバイス |
JP2005530307A (ja) * | 2002-01-03 | 2005-10-06 | ネア・パワー・システムズ・インコーポレーテッド | 表面にコンフォーマル導電層を有する多孔質燃料電池電極構造体 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH049060A (ja) | 1990-04-26 | 1992-01-13 | Mitsui Petrochem Ind Ltd | 高光線透過性防塵体の製造方法 |
ATE171791T1 (de) | 1990-10-16 | 1998-10-15 | Mitsui Chemicals Inc | Verwendung eines hochlichtdurchlässigen staubschützenden films, verfahren zu dessen herstellung und staubschützendes element |
KR200149834Y1 (ko) | 1995-12-12 | 1999-06-15 | 구본준 | 펠리클을 구비한 마스크 |
US6197454B1 (en) | 1998-12-29 | 2001-03-06 | Intel Corporation | Clean-enclosure window to protect photolithographic mask |
US6623893B1 (en) | 2001-01-26 | 2003-09-23 | Advanced Micro Devices, Inc. | Pellicle for use in EUV lithography and a method of making such a pellicle |
JP2004061884A (ja) * | 2002-07-29 | 2004-02-26 | Umc Japan | フォトマスク |
US6984474B2 (en) | 2003-07-29 | 2006-01-10 | Asml Holding N.V. | Reticle barrier system for extreme ultra-violet lithography |
US7153615B2 (en) | 2003-08-20 | 2006-12-26 | Intel Corporation | Extreme ultraviolet pellicle using a thin film and supportive mesh |
US7230673B2 (en) * | 2004-12-07 | 2007-06-12 | Asml Netherlands B.V. | Lithographic apparatus, reticle exchange unit and device manufacturing method |
US7767985B2 (en) * | 2006-12-26 | 2010-08-03 | Globalfoundries Inc. | EUV pellicle and method for fabricating semiconductor dies using same |
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2006
- 2006-11-10 US US11/595,085 patent/US7723704B2/en active Active
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2007
- 2007-11-09 GB GB0909392A patent/GB2456980B/en not_active Expired - Fee Related
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- 2007-11-09 CN CN2007800417906A patent/CN101583906B/zh active Active
- 2007-11-09 DE DE112007002735T patent/DE112007002735B4/de active Active
- 2007-11-09 TW TW096142357A patent/TWI421628B/zh not_active IP Right Cessation
- 2007-11-09 KR KR1020097011932A patent/KR101321961B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000147750A (ja) * | 1998-11-18 | 2000-05-26 | Mitsui Chemicals Inc | ペリクル |
JP2001059901A (ja) * | 1999-07-02 | 2001-03-06 | Asm Lithography Bv | 極端紫外光学素子用のキャッピング層 |
JP2005530307A (ja) * | 2002-01-03 | 2005-10-06 | ネア・パワー・システムズ・インコーポレーテッド | 表面にコンフォーマル導電層を有する多孔質燃料電池電極構造体 |
JP2005043895A (ja) * | 2003-07-25 | 2005-02-17 | Asml Netherlands Bv | フィルタ・ウィンドウ、リソグラフ投影装置、フィルタ・ウィンドウの製造方法、デバイスの製造方法、及びそれらによって製造されたデバイス |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010541267A (ja) * | 2007-10-02 | 2010-12-24 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学薄膜素子 |
WO2014142125A1 (ja) * | 2013-03-15 | 2014-09-18 | 旭化成イーマテリアルズ株式会社 | ペリクル膜及びペリクル |
KR20150119148A (ko) | 2013-03-15 | 2015-10-23 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 펠리클막 및 펠리클 |
JPWO2014142125A1 (ja) * | 2013-03-15 | 2017-02-16 | 旭化成株式会社 | ペリクル膜及びペリクル |
JP2014229786A (ja) * | 2013-05-23 | 2014-12-08 | 株式会社東芝 | 露光方法、反射型マスクおよび半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
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GB2456980B (en) | 2011-09-21 |
KR20090088396A (ko) | 2009-08-19 |
US20080113491A1 (en) | 2008-05-15 |
DE112007002735T5 (de) | 2009-09-17 |
TWI421628B (zh) | 2014-01-01 |
CN101583906A (zh) | 2009-11-18 |
GB2456980A (en) | 2009-08-05 |
US7723704B2 (en) | 2010-05-25 |
CN101583906B (zh) | 2012-03-21 |
GB0909392D0 (en) | 2009-07-15 |
DE112007002735B4 (de) | 2010-10-07 |
TW200832051A (en) | 2008-08-01 |
KR101321961B1 (ko) | 2013-10-25 |
WO2008060465A1 (en) | 2008-05-22 |
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