JP2010506383A - 発光ダイオードチップの製造方法 - Google Patents
発光ダイオードチップの製造方法 Download PDFInfo
- Publication number
- JP2010506383A JP2010506383A JP2009530253A JP2009530253A JP2010506383A JP 2010506383 A JP2010506383 A JP 2010506383A JP 2009530253 A JP2009530253 A JP 2009530253A JP 2009530253 A JP2009530253 A JP 2009530253A JP 2010506383 A JP2010506383 A JP 2010506383A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- emitting diode
- substrate
- diode chip
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- 238000005520 cutting process Methods 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 84
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- -1 gallium nitride series compound Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【選択図】図2
Description
Claims (4)
- N型半導体層とP型半導体層との間に活性層を有する発光ダイオードチップの製造方法において、
基板を準備する段階と、
前記基板上に、前記N型半導体層とP型半導体層との間に活性層を備える半導体層を積層する段階と、
前記基板上に積層された前記半導体層に、前記基板が露出されるまで溝を形成し、その溝により複数のチップ単位に区分された半導体層に傾斜した側壁を形成する段階と、を備えることを特徴とする発光ダイオードチップの製造方法。 - 前記側壁形成段階は、傾いた刃を有するブレードを利用して、前記半導体層に溝を形成し、前記複数のチップ単位に区分された半導体層に傾斜した側壁を形成することを特徴とする請求項1に記載の発光ダイオードチップの製造方法。
- 前記ブレード刃の傾斜は、その頂角が50°乃至150°の範囲内であることを特徴とする請求項2に記載の発光ダイオードチップの製造方法。
- 前記側壁形成段階の後に、前記複数のチップ単位に区分するため前記基板にスクライビングを行う段階と、
前記スクライビングされた基板を切断することにより、個別の発光ダイオードチップに分離する段階と、を更に備えることを特徴とする請求項1に記載の発光ダイオードチップの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060096760A KR20080030404A (ko) | 2006-09-30 | 2006-09-30 | 발광 다이오드 칩 제조방법 |
PCT/KR2007/004448 WO2008038917A1 (en) | 2006-09-30 | 2007-09-14 | Method of fabricating light emitting diode chip |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010506383A true JP2010506383A (ja) | 2010-02-25 |
Family
ID=39230321
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530253A Pending JP2010506383A (ja) | 2006-09-30 | 2007-09-14 | 発光ダイオードチップの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7951630B2 (ja) |
JP (1) | JP2010506383A (ja) |
KR (1) | KR20080030404A (ja) |
WO (1) | WO2008038917A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102157652B (zh) * | 2010-02-11 | 2013-03-27 | 华新丽华股份有限公司 | 增益发光二极管出光效率的方法 |
CN102738313B (zh) * | 2011-04-01 | 2015-03-18 | 山东华光光电子有限公司 | 一种提高led芯片出光的芯片切割方法 |
JP5803457B2 (ja) * | 2011-09-08 | 2015-11-04 | 三菱電機株式会社 | レーザダイオード素子の製造方法 |
US20130130420A1 (en) * | 2011-11-17 | 2013-05-23 | Fu-Bang CHEN | Method of laser lift-off for leds |
CN104347760A (zh) * | 2013-07-24 | 2015-02-11 | 晶能光电(江西)有限公司 | 一种led芯片的切割方法 |
WO2017078368A1 (ko) * | 2015-11-05 | 2017-05-11 | 서울바이오시스주식회사 | 자외선 발광 소자 및 그것을 제조하는 방법 |
CN110085554A (zh) * | 2019-05-16 | 2019-08-02 | 强茂电子(无锡)有限公司 | 一种玻璃钝化硅晶圆的切割方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318731A (ja) * | 1993-03-12 | 1994-11-15 | Sharp Corp | 半導体発光装置 |
WO2005008792A1 (ja) * | 2003-07-18 | 2005-01-27 | Sanyo Electric Co., Ltd. | 発光ダイオード |
JP2005159035A (ja) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | 発光ダイオード及び発光装置 |
JP2005302804A (ja) * | 2004-04-07 | 2005-10-27 | Toyoda Gosei Co Ltd | 発光ダイオード及びその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
JP3724620B2 (ja) * | 1998-09-29 | 2005-12-07 | シャープ株式会社 | 発光ダイオードの製造方法 |
US8294172B2 (en) * | 2002-04-09 | 2012-10-23 | Lg Electronics Inc. | Method of fabricating vertical devices using a metal support film |
US6818532B2 (en) * | 2002-04-09 | 2004-11-16 | Oriol, Inc. | Method of etching substrates |
US7592636B2 (en) * | 2002-09-30 | 2009-09-22 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component and method for the production thereof |
KR100483049B1 (ko) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드의 제조방법 |
KR100613272B1 (ko) | 2003-12-30 | 2006-08-18 | 주식회사 이츠웰 | 수직형 전극 구조를 가지는 발광 다이오드 및 그 제조 방법 |
KR20050104151A (ko) | 2004-04-28 | 2005-11-02 | 주식회사 이츠웰 | 질화물계 반도체 발광다이오드 및 그의 제조방법 |
JP4753628B2 (ja) * | 2004-06-11 | 2011-08-24 | 昭和電工株式会社 | 化合物半導体素子ウェハーの製造方法 |
KR20060077801A (ko) * | 2004-12-31 | 2006-07-05 | 엘지전자 주식회사 | 고출력 발광 다이오드 및 그의 제조 방법 |
US20080258165A1 (en) * | 2007-04-23 | 2008-10-23 | Goldeneye, Inc. | Light emitting diode chip |
JP2011129765A (ja) * | 2009-12-18 | 2011-06-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
-
2006
- 2006-09-30 KR KR1020060096760A patent/KR20080030404A/ko not_active Application Discontinuation
-
2007
- 2007-09-14 JP JP2009530253A patent/JP2010506383A/ja active Pending
- 2007-09-14 WO PCT/KR2007/004448 patent/WO2008038917A1/en active Application Filing
- 2007-09-14 US US12/442,617 patent/US7951630B2/en active Active
-
2011
- 2011-04-19 US US13/089,544 patent/US8481352B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318731A (ja) * | 1993-03-12 | 1994-11-15 | Sharp Corp | 半導体発光装置 |
WO2005008792A1 (ja) * | 2003-07-18 | 2005-01-27 | Sanyo Electric Co., Ltd. | 発光ダイオード |
JP2005159035A (ja) * | 2003-11-26 | 2005-06-16 | Sumitomo Electric Ind Ltd | 発光ダイオード及び発光装置 |
JP2005302804A (ja) * | 2004-04-07 | 2005-10-27 | Toyoda Gosei Co Ltd | 発光ダイオード及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100041173A1 (en) | 2010-02-18 |
US20110195538A1 (en) | 2011-08-11 |
KR20080030404A (ko) | 2008-04-04 |
US8481352B2 (en) | 2013-07-09 |
US7951630B2 (en) | 2011-05-31 |
WO2008038917A1 (en) | 2008-04-03 |
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