CN102738313B - 一种提高led芯片出光的芯片切割方法 - Google Patents
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CN102738313A CN102738313A (zh) | 2012-10-17 |
CN102738313B true CN102738313B (zh) | 2015-03-18 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104347760A (zh) * | 2013-07-24 | 2015-02-11 | 晶能光电(江西)有限公司 | 一种led芯片的切割方法 |
CN106816500A (zh) * | 2017-02-16 | 2017-06-09 | 安徽芯瑞达科技股份有限公司 | 一种背裂式裂片方法 |
CN109427566A (zh) * | 2017-09-01 | 2019-03-05 | 晶能光电(江西)有限公司 | 一种晶圆切割方法 |
CN109103313A (zh) * | 2018-07-30 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | 一种深紫外led芯片的外延结构及其制备方法 |
CN111725059A (zh) * | 2019-03-21 | 2020-09-29 | 山东浪潮华光光电子股份有限公司 | 一种改善硅基led芯片外观的分割方法 |
Citations (3)
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CN101221998A (zh) * | 2007-01-09 | 2008-07-16 | 广镓光电股份有限公司 | 半导体光电组件及其切割方法 |
CN101397185A (zh) * | 2007-09-27 | 2009-04-01 | 三星钻石工业股份有限公司 | 激光加工装置 |
CN101976715A (zh) * | 2010-10-05 | 2011-02-16 | 厦门市三安光电科技有限公司 | 倒梯形铝镓铟磷系发光二极管的制作工艺 |
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SG139508A1 (en) * | 2001-09-10 | 2008-02-29 | Micron Technology Inc | Wafer dicing device and method |
JP2006245043A (ja) * | 2005-02-28 | 2006-09-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法及び発光素子 |
KR20080030404A (ko) * | 2006-09-30 | 2008-04-04 | 서울옵토디바이스주식회사 | 발광 다이오드 칩 제조방법 |
CN101552312A (zh) * | 2009-05-12 | 2009-10-07 | 上海蓝光科技有限公司 | 一种发光二极管芯片制作方法 |
CN101983825A (zh) * | 2010-10-09 | 2011-03-09 | 苏州德龙激光有限公司 | Led晶圆皮秒激光划片装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN101221998A (zh) * | 2007-01-09 | 2008-07-16 | 广镓光电股份有限公司 | 半导体光电组件及其切割方法 |
CN101397185A (zh) * | 2007-09-27 | 2009-04-01 | 三星钻石工业股份有限公司 | 激光加工装置 |
CN101976715A (zh) * | 2010-10-05 | 2011-02-16 | 厦门市三安光电科技有限公司 | 倒梯形铝镓铟磷系发光二极管的制作工艺 |
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Effective date of registration: 20151112 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee after: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Optoelectronics Co.,Ltd. |
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