JP2010228965A5 - - Google Patents

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JP2010228965A5
JP2010228965A5 JP2009078193A JP2009078193A JP2010228965A5 JP 2010228965 A5 JP2010228965 A5 JP 2010228965A5 JP 2009078193 A JP2009078193 A JP 2009078193A JP 2009078193 A JP2009078193 A JP 2009078193A JP 2010228965 A5 JP2010228965 A5 JP 2010228965A5
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resistant member
corrosion
aluminum
heat
aluminum nitride
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JP2009078193A
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JP2010228965A (en
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Priority to JP2009078193A priority Critical patent/JP2010228965A/en
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このような窒化アルミニウムからなる被覆膜は、例えば、化学気相成長法により成膜されたＣＶＤ膜であり、該成膜はアルミニウムの有機金属化合物とアンモニアを６００℃〜１２００℃の温度範囲下で反応させて得られたものである。 Such a coating film made of aluminum nitride is, for example, a CVD film formed by a chemical vapor deposition method, and the film formation is performed in a temperature range of 600 ° C. to 1200 ° C. with an organometallic compound of aluminum and ammonia. It was obtained by reacting with

また、窒化アルミニウムからなるＣＶＤ被覆膜は、アルミニウムの有機金属化合物とアンモニアを６００℃〜１２００℃の温度範囲下で反応させて得ることとしてもよい。 Further, the CVD coating film made of aluminum nitride may be obtained by reacting an organometallic compound of aluminum and ammonia in a temperature range of 600 ° C to 1200 ° C.

窒化アルミニウム膜１０３は、化学気相成長法により成膜されたＣＶＤ膜であり、アルミニウム含有有機金属化合物や塩化アルミニウムなどとアンモニアを６００℃〜１２００℃の温度範囲下で反応させて得られたもので、その相対密度は５０％以上９８％未満であり、硬度は２ＧＰａ以上１０ＧＰａ以下である。 The aluminum nitride film 103 is a CVD film formed by a chemical vapor deposition method, and is obtained by reacting an aluminum-containing organometallic compound or aluminum chloride with ammonia in a temperature range of 600 ° C. to 1200 ° C. The relative density is 50% or more and less than 98%, and the hardness is 2 GPa or more and 10 GPa or less.

反応温度は、好ましい成膜温度を探るため、５５０℃から１２５０℃の温度範囲で条件設定し、相対密度と硬度（硬さ）が異なる窒化アルミニウム膜を厚み１００μｍで成膜させて、窒化アルミ焼結体の表面全体を被覆した。 In order to find a preferable film formation temperature, the reaction temperature is set in a temperature range of 550 ° C. to 1250 ° C., an aluminum nitride film having a relative density and hardness (hardness) different from each other is formed to a thickness of 100 μm, The entire surface of the knot was coated.

Claims (7)

耐熱性部材と該耐熱性部材の表面の少なくとも一部を覆う被覆膜とを備え、前記被覆膜は相対密度が５０％以上９８％未満の窒化アルミニウムである、耐蝕性部材。   A corrosion-resistant member comprising a heat-resistant member and a coating film covering at least a part of the surface of the heat-resistant member, wherein the coating film is aluminum nitride having a relative density of 50% or more and less than 98%. 前記窒化アルミニウムの硬度は、２ＧＰａ以上１０ＧＰａ以下である、請求項１に記載の耐蝕性部材。   The corrosion-resistant member according to claim 1, wherein the aluminum nitride has a hardness of 2 GPa or more and 10 GPa or less. 前記窒化アルミニウムからなる被覆膜は化学気相成長法により成膜されたＣＶＤ膜であり、該成膜はアルミニウムの有機金属化合物とアンモニアを６００℃〜１２００℃の温度範囲下で反応させて得られたものである、請求項１又は２に記載の耐蝕性部材。 The coating film made of aluminum nitride is a CVD film formed by chemical vapor deposition, and is obtained by reacting an organometallic compound of aluminum and ammonia in a temperature range of 600 ° C. to 1200 ° C. The corrosion-resistant member according to claim 1 or 2, wherein 前記窒化アルミニウムからなる被覆膜は化学気相成長法により成膜されたＣＶＤ膜であり、該成膜は塩化アルミニウムとアンモニアを６００℃〜１２００℃の温度範囲下で反応させて得られたものである、請求項１又は２に記載の耐蝕性部材。 The coating film made of aluminum nitride is a CVD film formed by chemical vapor deposition, and the film was obtained by reacting aluminum chloride and ammonia in a temperature range of 600 ° C. to 1200 ° C. The corrosion-resistant member according to claim 1 or 2, wherein 前記耐熱性部材は、熱分解窒化硼素、窒化硼素と窒化アルミニウムの混合焼結体、熱分解窒化硼素コートグラファイト、窒化アルミニウム、希土類酸化物、酸化アルミニウム、酸化珪素、ジルコニア、サイアロン、グラファイト、高融点金属の何れかを主成分とする部材である、請求項１乃至４の何れか１項に記載の耐蝕性部材。   The heat-resistant member is pyrolytic boron nitride, mixed sintered body of boron nitride and aluminum nitride, pyrolytic boron nitride coated graphite, aluminum nitride, rare earth oxide, aluminum oxide, silicon oxide, zirconia, sialon, graphite, high melting point The corrosion-resistant member according to any one of claims 1 to 4, wherein the corrosion-resistant member is a member mainly containing any one of metals. 前記耐熱性部材は、静電チャックである、請求項１乃至５の何れか１項に記載の耐蝕性部材。   The corrosion-resistant member according to any one of claims 1 to 5, wherein the heat-resistant member is an electrostatic chuck. 前記耐熱性部材は、ウエハを加熱するヒータ部を内蔵している、請求項１乃至６の何れか１項に記載の耐蝕性部材。   The corrosion-resistant member according to any one of claims 1 to 6, wherein the heat-resistant member incorporates a heater portion for heating the wafer.
JP2009078193A 2009-03-27 2009-03-27 Corrosion resistant member Pending JP2010228965A (en)

Priority Applications (1)

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JP2009078193A JP2010228965A (en) 2009-03-27 2009-03-27 Corrosion resistant member

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Application Number Priority Date Filing Date Title
JP2009078193A JP2010228965A (en) 2009-03-27 2009-03-27 Corrosion resistant member

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JP2010228965A JP2010228965A (en) 2010-10-14
JP2010228965A5 true JP2010228965A5 (en) 2010-11-25

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5039120B2 (en) * 2009-12-07 2012-10-03 東京エレクトロン株式会社 Alumina member for plasma processing apparatus and method for manufacturing alumina member for plasma processing apparatus
JP2012096931A (en) * 2010-10-29 2012-05-24 Shin-Etsu Chemical Co Ltd Corrosion-resistant member coated with aluminum nitride, and method for producing the same
JP5527821B2 (en) * 2010-12-03 2014-06-25 信越化学工業株式会社 Corrosion resistant material
JP5876259B2 (en) * 2011-04-14 2016-03-02 信越化学工業株式会社 Method for manufacturing member covered with aluminum nitride film
KR102519544B1 (en) 2017-12-07 2023-04-07 삼성전자주식회사 Wafer loading apparatus and film forming apparatus
CN114197038B (en) * 2021-12-10 2024-06-07 中国电子科技集团公司第四十六研究所 Protection device for improving ultraviolet transmittance of aluminum nitride epitaxial layer and use method
JP2023170163A (en) * 2022-05-18 2023-12-01 株式会社フェローテックマテリアルテクノロジーズ wafer support

Family Cites Families (11)

* Cited by examiner, † Cited by third party
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JPS61163277A (en) * 1985-01-11 1986-07-23 Nec Corp Synthesizing method of aln thin film
JPS63297990A (en) * 1987-05-29 1988-12-05 東芝セラミックス株式会社 Member for low melting-point metal melting holding furnace
JPS6452069A (en) * 1987-08-21 1989-02-28 Asahi Chemical Ind Method for synthesizing aluminum nitride film at high speed
JP2679798B2 (en) * 1987-11-13 1997-11-19 東芝セラミックス株式会社 Manufacturing method of aluminum nitride
JPH0674502B2 (en) * 1990-03-29 1994-09-21 株式会社半導体エネルギー研究所 Semiconductor device
JPH0786379A (en) * 1993-09-13 1995-03-31 Kyocera Corp Semiconductor manufacturing suscepter
JP3767719B2 (en) * 1997-10-30 2006-04-19 信越化学工業株式会社 Electrostatic chuck
JP2002231645A (en) * 2001-02-02 2002-08-16 Ngk Insulators Ltd Method of manufacturing nitride semiconductor film
JP4563230B2 (en) * 2005-03-28 2010-10-13 昭和電工株式会社 Method for manufacturing AlGaN substrate
JP2007016272A (en) * 2005-07-06 2007-01-25 Ge Speciality Materials Japan Kk Protective film covered on substrate, and its manufacturing method
JP4823856B2 (en) * 2006-11-01 2011-11-24 国立大学法人三重大学 Method for producing AlN group III nitride single crystal thick film

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