JP2010226135A - 半導体ダイ装着用フランジ - Google Patents
半導体ダイ装着用フランジ Download PDFInfo
- Publication number
- JP2010226135A JP2010226135A JP2010129717A JP2010129717A JP2010226135A JP 2010226135 A JP2010226135 A JP 2010226135A JP 2010129717 A JP2010129717 A JP 2010129717A JP 2010129717 A JP2010129717 A JP 2010129717A JP 2010226135 A JP2010226135 A JP 2010226135A
- Authority
- JP
- Japan
- Prior art keywords
- flange
- copper
- frame
- metal body
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 62
- 239000010949 copper Substances 0.000 claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 229910045601 alloy Inorganic materials 0.000 claims description 37
- 239000000956 alloy Substances 0.000 claims description 37
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 15
- 229910052726 zirconium Inorganic materials 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims 5
- 239000007787 solid Substances 0.000 claims 4
- 229920000106 Liquid crystal polymer Polymers 0.000 abstract description 14
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 abstract description 13
- 238000000465 moulding Methods 0.000 abstract description 12
- 230000014759 maintenance of location Effects 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 239000010439 graphite Substances 0.000 description 16
- 229910002804 graphite Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 238000005476 soldering Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 238000001746 injection moulding Methods 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229920001169 thermoplastic Polymers 0.000 description 9
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000008393 encapsulating agent Substances 0.000 description 7
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- 239000010703 silicon Substances 0.000 description 7
- 239000012815 thermoplastic material Substances 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
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- 238000004080 punching Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- BLNMQJJBQZSYTO-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu][Mo][Cu] BLNMQJJBQZSYTO-UHFFFAOYSA-N 0.000 description 2
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000004023 plastic welding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- -1 spheres and lumps Chemical compound 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/4817—Conductive parts for containers, e.g. caps
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- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H01L2224/481—Disposition
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
【解決手段】半導体集積回路素子を収納するための回路パッケージ100が、高含量銅のフランジ102、一つまたはそれ以上の高含量銅のリード106およびフランジとリードに成形される液晶ポリマーフレームを含む4104。フランジは、成形フレームと機械的に連結する鳩尾型の溝または他の形状のフレーム保持構造部500を含む。成形の間、フレームの一部は、フレーム保持構造部にまたはその周囲に固定するキーを形成する。リードは、フレームを機械的に連結する一つまたはそれ以上のリード保持構造部を含む。成形の間、フレームの一部はリード保持構造部にまたはそれに接して固定する。フレームは、湿気の浸入防止のための化合物を含み、その熱膨張係数はリードとフランジの熱膨張係数にマッチする。フレームはダイ取り付け温度に耐えるように処方される。
【選択図】図5A
Description
本出願は、2003年1月29日に出願の合衆国仮出願第60/443.470号の恩恵を受けることを主張するもので、この出願の内容をここに参考記載として組み入れるものである。
なし
本出願は、集積回路のための回路パッケージに用いられる半導体ダイ装着用フランジに関するものである。
この発明は、ダイ取り付けの高温度に耐え、接着剤を使用せずにダイのためのハーメチック(気密)シールされた空間部を確保できる部品点数が少なく、低価格の回路パッケージを提供するものである。この回路パッケージの構造は、幾つかの機械的特徴と構成を利用して、完全密封性と温度耐性を達成したものである。この組合せは、また、在来の回路パッケージよりもすぐれた導電性と熱伝導性及び機械的一体性を示す回路パッケージを提供するものでもある。
これらおよび他の本発明の特徴、利点および態様については当業者は以下の説明から次の添付の図面を参考にしてより明らかにできる:
図1は、本発明の一態様に従う、蓋がない回路パッケージの斜視図である。
図2は蓋を有する図1の回路パッケージの斜視図である。
図3は、図1の回路パッケージの製造に使用されるような一つのリードフレームの上面図である。
図4Aは、図3のリードフレームにフレームとフランジが成形されて装着された後のものの上面図である。
図4Bは、図4Aに示されるストリップの一つのリードフレームの上面図である。
図5Aは、図1の回路パッケージの部分分解図である。
図5Bは、図1の回路パッケージの他の態様の部分分解図である。
図6A−Cは、それぞれ製造の3段階の一つを示す図1の回路パッケージのフランジの断面図である。
図7A−Dは、図1の回路パッケージのフランジに装着されるダイの概略図である。
図8Aは、図1の回路パッケージのリードの詳細な斜視図である。
図8Bは、図1の回路パッケージのリードのいくつかの代替の態様の断面図である。
図9は、図1の回路パッケージのフレームの部分の概略断面図である。
図10は、図1の回路パッケージのシールを示す部分の拡大図である。
図11Aと11Bは、図10のシールの二つの態様をそれぞれ示す図1の回路パッケージの断面図である。
図12は図10、11Aおよび11Bのシールとして使用するに適当な材料の一態様について、粘度とせん断速度との関係を示すグラフである。
図13Aは、図1の回路パッケージのための蓋の斜視図である。
図13Bは、一つの態様に従うものである図13Aの蓋の部分の斜視図である。
図14は、図1の回路パッケージを製造する方法のフローチャートである。
この発明は、ダイ取り付けの高温度に耐え、接着剤を使用せずにダイのためのハーメチック(気密)シールされた空間部を確保できる部品点数が少なく、低価格の回路パッケージを提供するものである。図1は、この発明の一つの実施例による模範的な回路パッケージ100を示す。分かりやすくするために、この回路パッケージは、蓋なしで示されている。前記回路パッケージ100には、フランジ102、フレーム104及び二つのリード106,108が含まれている。フレーム104は、二つのリード106,108をフランジ102に対し、そして互いに電気絶縁している。ダイ110は、共融合金はんだ付け部114などによりダイ取り付け領域112に取り付けられている。分かりやすくするために、図1では、一つのダイのみが示されているが、一般的には、二つ又はそれ以上のダイがダイ取り付け領域112に装着されるようになっている。
この発明による回路パッケージ100は、在来の回路パッケージ同様に帯状体又はリールに巻かれて製造されることが好ましい。図3は、リードフレーム302,304のようなリードフレームの帯状体300を示す。各リードフレームには、306,308で示されている二つのリードが含まれている。一つの実施例に於いては、リードフレーム帯状体300が打ち抜き又はエッチングされたとき、複数の孔がリード3−6.308に貫通される。これらの孔の例が310で示されている。これらの孔310は、詳しく後記するように、フレームをリード306,308にロックするために使用される。
フランジ102は、基体となるもので、これに本回路パッケージの他のパーツ類が取り付けられる。さらに、フランジ102は、代表的には、ダイからヒートシンクへ熱を伝え、前記ダイの一つの端子をプリント基板に電気的に接続するものでもある。フランジ102は、好ましくは銅の含有率が高い合金(少なくとも約50%の銅)で作られ、導電性と熱伝導性に富み、ダイ取り付け温度におけるアニールに耐えるようになっている。この合金には、少なくとも一つの極微量の金属が含まれていることが好ましい。フランジ102は、少なくも約98%の銅と約0.05%から約1.5%のジルコニウムからなることが好ましいが、別の高い銅の含有率にしても差し支えない。フランジ102は、約99.9%の銅と約0.1%のジルコニウムからなることがさらに好ましい。フランジ102は、厚みが約2.54μm(約100マイクロインチ)のニッケルで電気めっきされて、拡散バリヤ層を形成し、約1.7μm(約65マイクロインチ)の金で電気めっきされて、ダイ110をフランジにはんだ付けするのを容易にする。
図1について前記したように、フレーム104は、好ましくは射出成形でフランジ102、リード1−6.108へ成形される。この成形工程の間、フレーム104は、リード106.108のまわりに成形されるのが好ましく、これらリードは、前記フレームの側壁を介して前記フレーム外側から空間キャビティ領域へ張り込む。この成形の結果、前記フレームは、リード106,108にくっつくが、このくっつきは、完全なものではなく、ダイのはんだ付けの熱及び動作によりこわれてしまう。この問題を解決するために、各リード106,108には、一つ又は複数のリード保持機構をもたせて前記リーソをフレーム104に固定するようにすることが好ましい。
図5Aに関連して上記したように、フレーム104は、熱可塑性素材の射出成形で成形されフランジ102とリード106,108に一体成形される。フランジ102の素材には、好ましくは、液晶ポリマー(LCP)が含まれ、これは、ダイ取り付け温度(AuSnはんだ付けの温度280〜330℃又はAuSiはんだ付けの温度390〜420℃)に耐えることができる。従来のLCP類は、約300℃〜約330℃の範囲の温度で溶けてしまう。フレーム104には、その溶融温度を上げ、熱膨張係数(CTE)を調節し、湿気の浸透度を減らすベース樹脂とコンパウンド類が含まれている。実用的には、前記樹脂類とコンパウンド類を含むフレーム104の素材をここでは“熱可塑性コンパウンド”又は“フレーム材(マテリアル)”という。
フレーム保持構造部500(図5A)とリード保持構造部800(図8A)は良好な機械的な接合部を構成し、湿気と大気ガスの進入を抑制する。さらに、フレーム104は、好ましくは添加剤と内側または外側にフィルムを貼付されて、この侵入を減少させる。さらに進入を減少させるには、図10に示すように、封止1000と1002を、好ましくはフレーム104の縁に沿ってフレーム104の内部に施し、そこではフレームはリード106,108と接し、またフレームはフランジ102に接する。図11Aの断面図に示されるように、封止1002は、フランジ102とフレーム104の間からの浸入の防止と、フレーム104とリード108の間の浸入防止に効果的である。代替としては、図11Bに示すように、二つの封止、1002Aと1002Bを一つの封止1002に代って使用することができる。
蓋200は、ダイ110がフランジ102に付けられてリード106,108に電気的に接続された後に、フレーム104に取り付けられる。適当な蓋200は、図13Aと13Bに示される。蓋200は、好ましくはフレーム104に超音波・溶接され、それは約50kHzと約60kHzの間の振動数と約100ミクロン未満(より好ましくは60ミクロン未満)の振幅の溶接信号を使用する。代替としては、蓋200はレーザー溶接または熱溶接でフレーム104に溶接される。
回路パッケージ100のフランジ102、フレーム104、リード106,108および蓋200およびこれらの部品の製造に使用される材料、方法を含み、その詳細は上記で説明される。図14は、方法を説明する単純化したフローチャートを例示し、それにより回路パッケージ100が製造されて使用され得る。
102 フランジ
104 フレーム
106 リード
108 リード
110 ダイ
112 ダイ取り付け領域
114 共融合金半田
116 スロット
118 スロット
120 配線
122 配線
Claims (54)
- 少なくとも50%の銅からなる固体金属胴体からなり、該金属胴体の第1の側の中央に位置する平面状ダイ取り付け領域は25.4mm(1インチ)当たり0.127mm(0.005インチ)以内で平らであり、その表面粗さは1.6μm(64マイクロインチ)未満とすると共に、前記第1の側の反対側に位置する第2の側の表面粗さを1.6μm(64マイクロインチ)未満とすることを特徴とする半導体ダイ装着用フランジ。
- 前記金属胴体が複数の開口を区画し、それによりフランジが基板に実装され得ることを特徴とする請求項1に記載のフランジ。
- 前記金属胴体が少なくとも90%の銅からなることを特徴とする請求項1に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅からなることを特徴とする請求項1に記載のフランジ。
- 前記金属胴体が、銅と、ジルコニウムと銀からなる群から選ばれる少なくとも一つの材料との合金からなることを特徴とする請求項1に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅を含む合金からなることを特徴とする請求項1に記載のフランジ。
- 前記合金が0.05%と1.5%の間の量のジルコニウムと少なくとも98.5%の銅を含むことを特徴とする請求項6に記載のフランジ。
- 前記合金が0.085%の銀と少なくとも99.9%の銅を含むことを特徴とする請求項6に記載のフランジ。
- 前記金属胴体が少なくとも一つの切込みを区画する凹部を含むことを特徴とする請求項1に記載のフランジ。
- 前記凹部が鳩尾形状の断面を有する部分を含むことを特徴とする請求項9に記載のフランジ。
- 前記凹部がT字−形状の断面を有する部分を含むことを特徴とする請求項9に記載のフランジ。
- 前記凹部がL字−形状の断面を有する部分を含むことを特徴とする請求項9に記載のフランジ。
- 前記金属胴体が少なくとも一つの切り込み部分を区画する畝部を含むことを特徴とする請求項1に記載のフランジ。
- 前記畝部が鳩尾形状の断面を有する部分を含むことを特徴とする請求項13に記載のフランジ。
- 前記畝部がT字−形状の断面を有する部分を含むことを特徴とする請求項13に記載のフランジ。
- 前記畝部がL字−形状の断面を有する部分を含むことを特徴とする請求項13に記載のフランジ。
- 前記金属胴体の第2の側が、凸状であることを特徴とする請求項1に記載のフランジ。
- 前記第2の側の凸状が、少なくとも0.00254mm(0.0001インチ)であることを特徴とする請求項17に記載のフランジ。
- 前記第2の側の凸状が、0.0127mmと0.0254mm(0.0005と0.0010インチ)の間にあることを特徴とする請求項17に記載のフランジ。
- 固体金属胴体からなり、該金属胴体の第1の側の中央に位置する平面状ダイ取り付け領域は25.4mm(1インチ)当たり0.127mm(0.005インチ)以内で平らであり、その表面粗さは1.6μm(64マイクロインチ)未満とすると共に、前記第1の側の反対側に位置する第2の側の表面粗さを1.6μm(64マイクロインチ)未満とし、かつ凸状とすることを特徴とする半導体ダイ装着用フランジ。
- 前記金属胴体が複数の開口を区画し、それによりフランジが基板に実装され得ることを特徴とする請求項20に記載のフランジ。
- 前記第2の側の凸状が、少なくとも0.00254mm(0.0001インチ)であることを特徴とする請求項20に記載のフランジ。
- 前記第2の側の凸状が、0.0127mmと0.0254mm(0.0005と0.0010インチ)の間にあることを特徴とする請求項20に記載のフランジ。
- 前記金属胴体が少なくとも50%の銅からなることを特徴とする請求項20に記載のフランジ。
- 前記金属胴体が少なくとも90%の銅からなることを特徴とする請求項20に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅からなることを特徴とする請求項20に記載のフランジ。
- 前記金属胴体が、銅と、ジルコニウムと銀からなる群から選ばれる少なくとも一つの材料との合金からなることを特徴とする請求項20に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅を含む合金からなることを特徴とする請求項20に記載のフランジ。
- 前記合金が0.05%と1.5%の間の量のジルコニウムと少なくとも98.5%の銅を含むことを特徴とする請求項28に記載のフランジ。
- 前記合金が0.085%の銀と少なくとも99.9%の銅を含むことを特徴とする請求項28に記載のフランジ。
- 固体金属胴体からなり、該金属胴体の第1の側の中央に位置する平面状ダイ取り付け領域は25.4mm(1インチ)当たり0.127mm(0.005インチ)以内で平らであり、その表面粗さは1.6μm(64マイクロインチ)未満とすると共に、前記第1の側の反対側に位置する第2の側の表面粗さを1.6μm(64マイクロインチ)未満とし、かつ金属胴体が少なくとも一つの切り込みを区画する凹部を含むものであることを特徴とする半導体ダイ装着用フランジ。
- 前記金属胴体が複数の開口を区画し、それによりフランジが基板に装着され得ることを特徴とする請求項31に記載のフランジ。
- 前記凹部が鳩尾形状の断面を有する部分を含むことを特徴とする請求項31に記載のフランジ。
- 前記凹部がT字−形状の断面を有する部分を含むことを特徴とする請求項31に記載のフランジ。
- 前記凹部がL字−形状の断面を有する部分を含むことを特徴とする請求項31に記載のフランジ。
- 前記金属胴体が少なくとも50%の銅からなることを特徴とする請求項31に記載のフランジ。
- 前記金属胴体が少なくとも90%の銅からなることを特徴とする請求項31に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅からなることを特徴とする請求項31に記載のフランジ。
- 前記金属胴体が、銅と、ジルコニウムと銀からなる群から選ばれる少なくとも一つの材料との合金からなることを特徴とする請求項31に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅を含む合金からなることを特徴とする請求項31に記載のフランジ。
- 前記合金が0.05%と1.5%の間の量のジルコニウムと少なくとも98.5%の銅を含むことを特徴とする請求項40に記載のフランジ。
- 前記合金が、0.085%の銀と少なくとも99.9%の銅を含むことを特徴とする請求項41に記載のフランジ。
- 固体金属胴体からなり、該金属胴体の第1の側の中央に位置する平面状ダイ取り付け領域は25.4mm(1インチ)当たり0.127mm(0.005インチ)以内で平らであり、その表面粗さは1.6μm(64マイクロインチ)未満とすると共に、前記第1の側の反対側に位置する第2の側の表面粗さを1.6μm(64マイクロインチ)未満とし、かつ金属胴体が少なくとも一つの切り込みを区画する畝部を含むものであることを特徴とする半導体ダイ装着用フランジ。
- 前記金属胴体が複数の開口を区画し、それによりフランジが基板に装着され得ることを特徴とする請求項43に記載のフランジ。
- 前記凹部が鳩尾形状の断面を有する部分を含むことを特徴とする請求項43に記載のフランジ。
- 前記凹部がT字−形状の断面を有する部分を含むことを特徴とする請求項43に記載のフランジ。
- 前記凹部がL字−形状の断面を有する部分を含むことを特徴とする請求項43に記載のフランジ。
- 前記金属胴体が少なくとも50%の銅からなることを特徴とする請求項43に記載のフランジ。
- 前記金属胴体が少なくとも90%の銅からなることを特徴とする請求項43に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅からなることを特徴とする請求項43に記載のフランジ。
- 前記金属胴体が、銅と、ジルコニウムと銀からなる群から選ばれる少なくとも一つの材料との合金からなることを特徴とする請求項43に記載のフランジ。
- 前記金属胴体が少なくとも98%の銅を含む合金からなることを特徴とする請求項43に記載のフランジ。
- 前記合金が0.05%と1.5%の間の量のジルコニウムと少なくとも98.5%の銅を含むことを特徴とする請求項52に記載のフランジ。
- 前記合金が、0.085%の銀と少なくとも99.9%の銅を含むことを特徴とする請求項53に記載のフランジ。
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