JP2010199415A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP2010199415A JP2010199415A JP2009044431A JP2009044431A JP2010199415A JP 2010199415 A JP2010199415 A JP 2010199415A JP 2009044431 A JP2009044431 A JP 2009044431A JP 2009044431 A JP2009044431 A JP 2009044431A JP 2010199415 A JP2010199415 A JP 2010199415A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 214
- 238000005215 recombination Methods 0.000 claims description 57
- 230000006798 recombination Effects 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 42
- 239000002019 doping agent Substances 0.000 claims description 9
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 212
- 229910021419 crystalline silicon Inorganic materials 0.000 description 27
- 239000000463 material Substances 0.000 description 21
- 239000000969 carrier Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】太陽電池100は、p型非晶質半導体層11pとn型非晶質半導体層12nとの間に挿入された再結合層Rを備える。
【選択図】図2
Description
(太陽電池の構成)
本発明の第1実施形態に係る太陽電池の構成について、図1及び図2を参照しながら説明する。図1は、第1実施形態に係る太陽電池100の裏面側の平面図である。図2は、図1のA−A線における拡大断面図である。
このような半導体材料を用いた場合、エネルギーバンド中に存在する多くのギャップ内準位を介したキャリアの再結合を利用することによって、p型非晶質半導体層11pを介してn型結晶シリコン基板10nで生成されたキャリアを取り出すことができる。従って、p型非晶質半導体層11pの表面に再結合層Rを形成しても、両層の接触は、低抵抗、すなわちオーム性接触に近似する。
このような金属材料を用いた場合、p型非晶質半導体層11pの表面に再結合層Rを形成しても、両層の接触は、低抵抗、すなわちオーム性接触に近似する。従って、p側電極20pとp型非晶質半導体層11pとの間での低抵抗化が図られることによって、p側電極20pからキャリアを良好に取り出すことが可能となる。
次に、太陽電池100の製造方法について、太陽電池100の断図面を参照しながら説明する。
第1実施形態に係る太陽電池100は、p型非晶質半導体層11pとn型非晶質半導体層12nとの間に挿入された再結合層Rを有する。p型非晶質半導体層11pと再結合層Rとは、低抵抗で接触する。
以下において、第2実施形態に係る太陽電池100について、図面を参照しながら説明する。以下においては、上記第1実施形態との相違点について主に説明する。
図7は、第2実施形態に係る太陽電池100の拡大断面図である。図7に示すように、太陽電池100は、半導体層Sを有する。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
10n…n型結晶シリコン基板
11i…i型非晶質半導体層
11p…p型非晶質半導体層
111p…基板側領域
112p…再結合層側領域
12i…i型非晶質半導体層
12n…n型非晶質半導体層
20n…n側電極
20p…p側電極
30…レジスト膜
R…再結合層
S…半導体層
100…太陽電池
Claims (8)
- 半導体基板と、
前記半導体基板の一主面上における第1の領域上に形成され、第1導電型を有する第1の半導体層と、
前記半導体基板の前記一主面上における第2の領域上に形成され、第2導電型を有する第2の半導体層と
を備え、
前記第2の半導体層は、前記第2の領域上から前記第1の半導体層上に跨って形成され、
前記第1の領域上において、前記第1の半導体層と前記第2の半導体層との間に挿入された再結合層を有する
ことを特徴とする太陽電池。 - 前記第1の領域上において、前記第1の半導体層上に形成された第1の電極と、
前記第2の領域上において、前記第2の半導体層上に形成された第2の電極と
を備え、
前記第1の電極は、前記再結合層を介して、前記第1の半導体層に接続する
ことを特徴とする請求項1に記載の太陽電池。 - 前記再結合層は、前記第2の半導体層と同じ半導体からなり、
前記再結合層中に含有されるドーパント量は、前記第2の半導体層中に含有されるドーパント量よりも多い
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記再結合層は、前記第1の半導体層と同じ半導体からなり、
前記再結合層中に含有されるドーパント量は、前記第1の半導体層中に含有されるドーパント量よりも多い
ことを特徴とする請求項1乃至3の何れかに記載の太陽電池。 - 前記再結合層は、微結晶シリコンからなる
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記再結合層は、金属からなる
ことを特徴とする請求項1又は2に記載の太陽電池。 - 前記第2導電型は、p型である
ことを特徴とする請求項1乃至6の何れかに記載の太陽電池。 - 前記再結合層と前記第2の半導体層との間に挿入され、前記第2導電型を有する第3の半導体層を含む
ことを特徴とする請求項1乃至7の何れかに記載の太陽電池。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009044431A JP5461028B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池 |
US13/203,513 US8927853B2 (en) | 2009-02-26 | 2010-02-26 | Solar cell |
CN201080018626.5A CN102422434B (zh) | 2009-02-26 | 2010-02-26 | 太阳能电池 |
PCT/JP2010/053086 WO2010098445A1 (ja) | 2009-02-26 | 2010-02-26 | 太陽電池 |
EP10746324.2A EP2403004B1 (en) | 2009-02-26 | 2010-02-26 | Solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009044431A JP5461028B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010199415A true JP2010199415A (ja) | 2010-09-09 |
JP5461028B2 JP5461028B2 (ja) | 2014-04-02 |
Family
ID=42665649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009044431A Expired - Fee Related JP5461028B2 (ja) | 2009-02-26 | 2009-02-26 | 太陽電池 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8927853B2 (ja) |
EP (1) | EP2403004B1 (ja) |
JP (1) | JP5461028B2 (ja) |
CN (1) | CN102422434B (ja) |
WO (1) | WO2010098445A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014132604A (ja) * | 2013-01-04 | 2014-07-17 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
JP2014135343A (ja) * | 2013-01-09 | 2014-07-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
KR20140106701A (ko) * | 2011-12-21 | 2014-09-03 | 선파워 코포레이션 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012132766A1 (ja) | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
JP2013030615A (ja) * | 2011-07-28 | 2013-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
JP6083539B2 (ja) * | 2012-06-29 | 2017-02-22 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP5967555B2 (ja) * | 2012-06-29 | 2016-08-10 | パナソニックIpマネジメント株式会社 | 太陽電池 |
WO2014016932A1 (ja) * | 2012-07-26 | 2014-01-30 | 三洋電機株式会社 | 太陽電池の製造方法及び太陽電池 |
WO2014016931A1 (ja) * | 2012-07-26 | 2014-01-30 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
CN102856328B (zh) * | 2012-10-10 | 2015-06-10 | 友达光电股份有限公司 | 太阳能电池及其制作方法 |
JP6284522B2 (ja) * | 2013-03-28 | 2018-02-28 | シャープ株式会社 | 光電変換素子、光電変換モジュールおよび太陽光発電システム |
WO2017111697A1 (en) * | 2015-12-24 | 2017-06-29 | Trina Solar Energy Development Pte Ltd. | A method of fabricating a heterojunction all-back-contact solar cell |
US10217878B2 (en) * | 2016-04-01 | 2019-02-26 | Sunpower Corporation | Tri-layer semiconductor stacks for patterning features on solar cells |
CN110047965A (zh) * | 2018-01-16 | 2019-07-23 | 福建金石能源有限公司 | 一种新型的背接触异质结电池及其制作方法 |
WO2022134991A1 (zh) * | 2020-12-23 | 2022-06-30 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池及生产方法、光伏组件 |
CN114744063B (zh) * | 2020-12-23 | 2023-08-08 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池及生产方法、光伏组件 |
CN113380950A (zh) * | 2021-05-12 | 2021-09-10 | 郑州轻工业大学 | 一种背接触钙钛矿太阳能电池及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101151A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
WO2008050889A1 (fr) * | 2006-10-27 | 2008-05-02 | Kyocera Corporation | Procédé de fabrication d'élément de cellule solaire et élément de cellule solaire |
US20080142075A1 (en) * | 2006-12-06 | 2008-06-19 | Solexant Corporation | Nanophotovoltaic Device with Improved Quantum Efficiency |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4396793A (en) * | 1982-04-12 | 1983-08-02 | Chevron Research Company | Compensated amorphous silicon solar cell |
DE3420887A1 (de) * | 1984-06-05 | 1985-12-05 | Telefunken electronic GmbH, 7100 Heilbronn | Solarzelle |
CN100431177C (zh) | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
JP5166745B2 (ja) * | 2007-03-07 | 2013-03-21 | 信越化学工業株式会社 | 単結晶シリコン太陽電池の製造方法 |
JP2009044431A (ja) | 2007-08-08 | 2009-02-26 | Funai Electric Co Ltd | 携帯型電話端末 |
-
2009
- 2009-02-26 JP JP2009044431A patent/JP5461028B2/ja not_active Expired - Fee Related
-
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- 2010-02-26 CN CN201080018626.5A patent/CN102422434B/zh not_active Expired - Fee Related
- 2010-02-26 WO PCT/JP2010/053086 patent/WO2010098445A1/ja active Application Filing
- 2010-02-26 US US13/203,513 patent/US8927853B2/en not_active Expired - Fee Related
- 2010-02-26 EP EP10746324.2A patent/EP2403004B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101151A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
JP2005101240A (ja) * | 2003-09-24 | 2005-04-14 | Sanyo Electric Co Ltd | 光起電力素子およびその製造方法 |
WO2008050889A1 (fr) * | 2006-10-27 | 2008-05-02 | Kyocera Corporation | Procédé de fabrication d'élément de cellule solaire et élément de cellule solaire |
US20080142075A1 (en) * | 2006-12-06 | 2008-06-19 | Solexant Corporation | Nanophotovoltaic Device with Improved Quantum Efficiency |
WO2009096539A1 (ja) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | 太陽電池素子および太陽電池素子の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140106701A (ko) * | 2011-12-21 | 2014-09-03 | 선파워 코포레이션 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
KR101991791B1 (ko) | 2011-12-21 | 2019-06-21 | 선파워 코포레이션 | 하이브리드 폴리실리콘 이종접합 배면 접점 전지 |
JP2014132604A (ja) * | 2013-01-04 | 2014-07-17 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
JP2014135343A (ja) * | 2013-01-09 | 2014-07-24 | Sharp Corp | 光電変換素子および光電変換素子の製造方法 |
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US20120090674A1 (en) | 2012-04-19 |
EP2403004A4 (en) | 2017-07-19 |
CN102422434A (zh) | 2012-04-18 |
US8927853B2 (en) | 2015-01-06 |
EP2403004B1 (en) | 2021-03-31 |
WO2010098445A1 (ja) | 2010-09-02 |
JP5461028B2 (ja) | 2014-04-02 |
EP2403004A1 (en) | 2012-01-04 |
CN102422434B (zh) | 2015-09-02 |
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