JP2010165979A - Ledモジュールの製造方法およびledモジュール - Google Patents
Ledモジュールの製造方法およびledモジュール Download PDFInfo
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- JP2010165979A JP2010165979A JP2009008762A JP2009008762A JP2010165979A JP 2010165979 A JP2010165979 A JP 2010165979A JP 2009008762 A JP2009008762 A JP 2009008762A JP 2009008762 A JP2009008762 A JP 2009008762A JP 2010165979 A JP2010165979 A JP 2010165979A
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- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 229920005989 resin Polymers 0.000 claims description 103
- 239000011347 resin Substances 0.000 claims description 103
- 230000001681 protective effect Effects 0.000 claims description 56
- 238000007789 sealing Methods 0.000 claims description 17
- 230000005496 eutectics Effects 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 15
- 229920002050 silicone resin Polymers 0.000 description 12
- 238000000465 moulding Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 238000004382 potting Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/16—Making multilayered or multicoloured articles
- B29C45/1671—Making multilayered or multicoloured articles with an insert
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】リードと、上記リードの表面に搭載されたLEDチップ2と、上記リードの一部を覆い、かつ上記リードの面内方向において上記LEDチップ2を離間して囲む反射面61を有するケース6と、を備えるLEDモジュールの製造方法であって、リード1A’,1B’にLEDチップ2を搭載する工程と、LEDチップ2を搭載する工程の後に、ケース6を形成する工程を有する。
【選択図】 図4
Description
1A,1B,1A’,1B’ リード
11,11’,13,13’ 表面
12,12’,14,14’ 裏面
2 LEDチップ
3 補助樹脂
4 保護樹脂
5 封止樹脂
6 ケース
21 基板
22 バッファ層
23 n型半導体層
24 活性層
25 p型半導体層
26 n側電極
27 p側電極
28 絶縁層
29 ワイヤ
41 裏面部
61 反射面
Claims (12)
- リードと、
上記リードの表面に搭載されたLEDチップと、
上記リードの一部を覆い、かつ上記リードの面内方向において上記LEDチップを離間して囲む反射面を有するケースと、
を備えるLEDモジュールの製造方法であって、
上記リードに上記LEDチップを搭載する工程と、
上記LEDチップを搭載する工程の後に、上記ケースを形成する工程を有することを特徴とする、LEDモジュールの製造方法。 - 上記LEDチップを搭載する工程の後、上記ケースを形成する工程の前に、上記LEDチップを直接覆う保護樹脂を形成する工程をさらに有する、請求項1に記載のLEDモジュールの製造方法。
- 上記保護樹脂には、上記LEDチップからの光によって励起されることにより上記LEDチップからの光とは異なる波長の光を発する蛍光体が混入されている、請求項2に記載のLEDモジュールの製造方法。
- 上記LEDチップを搭載する工程の後、上記保護樹脂を形成する工程の前に、上記LEDチップのうち上記リードからはみ出た部分と上記リードの端面とを覆う補助樹脂を形成する工程をさらに有する、請求項2または3に記載のLEDモジュールの製造方法。
- 上記保護樹脂を形成する工程においては、上記リードのうち上記LEDチップが搭載された表面とは反対側の裏面の一部を覆う裏面部を有するように上記保護樹脂を形成し、
上記ケースを形成する工程においては、上記保護樹脂の上記裏面部を上記ケースによって覆う、請求項2ないし4のいずれかに記載のLEDモジュールの製造方法。 - 上記ケースを形成する工程の後に、上記反射面によって囲まれた空間を埋める封止樹脂を形成する工程をさらに有する、請求項1ないし5のいずれかに記載のLEDモジュールの製造方法。
- 上記封止樹脂には、上記LEDチップからの光によって励起されることにより上記LEDチップからの光とは異なる波長の光を発する蛍光体が混入されている、請求項6に記載のLEDモジュールの製造方法。
- 上記LEDチップは、フリップチップタイプである、請求項1ないし7のいずれかに記載のLEDモジュールの製造方法。
- 上記LEDチップを搭載する工程においては、共晶ボンディングの手法によって上記LEDチップを搭載する、請求項8に記載のLEDモジュールの製造方法。
- リードと、
上記リードの表面に搭載されたLEDチップと、
上記リードを直接覆う保護樹脂と、
上記リードの一部を覆い、かつ上記リードの面内方向において上記LEDチップを離間して囲む反射面を有するケースと、
を備えるLEDモジュールであって、
上記保護樹脂は、上記リードのうち上記LEDチップが搭載された表面とは反対側の裏面の一部を覆う裏面部を有し、
上記ケースは、上記保護樹脂の上記裏面部を覆っていることを特徴とする、LEDモジュール。 - 上記保護樹脂には、上記LEDチップからの光によって励起されることにより上記LEDチップからの光とは異なる波長の光を発する蛍光体が混入されている、請求項10に記載のLEDモジュール。
- 上記反射面によって囲まれた空間を埋めるとともに、上記LEDチップからの光によって励起されることにより上記LEDチップからの光とは異なる波長の光を発する蛍光体が混入されている封止樹脂をさらに備える、請求項10に記載のLEDモジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009008762A JP5368809B2 (ja) | 2009-01-19 | 2009-01-19 | Ledモジュールの製造方法およびledモジュール |
CN201080004841XA CN102282688A (zh) | 2009-01-19 | 2010-01-15 | Led模块的制造方法和led模块 |
US13/145,176 US9379295B2 (en) | 2009-01-19 | 2010-01-15 | Method for manufacturing LED module, and LED module |
PCT/JP2010/050380 WO2010082614A1 (ja) | 2009-01-19 | 2010-01-15 | Ledモジュールの製造方法およびledモジュール |
TW099101376A TWI489654B (zh) | 2009-01-19 | 2010-01-19 | LED module manufacturing method and LED module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2009008762A JP5368809B2 (ja) | 2009-01-19 | 2009-01-19 | Ledモジュールの製造方法およびledモジュール |
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JP2010165979A true JP2010165979A (ja) | 2010-07-29 |
JP5368809B2 JP5368809B2 (ja) | 2013-12-18 |
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JP2009008762A Active JP5368809B2 (ja) | 2009-01-19 | 2009-01-19 | Ledモジュールの製造方法およびledモジュール |
Country Status (5)
Country | Link |
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US (1) | US9379295B2 (ja) |
JP (1) | JP5368809B2 (ja) |
CN (1) | CN102282688A (ja) |
TW (1) | TWI489654B (ja) |
WO (1) | WO2010082614A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012023246A1 (ja) * | 2010-08-20 | 2012-02-23 | シャープ株式会社 | 発光ダイオードパッケージ |
JP2013543277A (ja) * | 2010-11-19 | 2013-11-28 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスのための点在キャリア |
JP2016513335A (ja) * | 2013-01-25 | 2016-05-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 照明アセンブリ、及び照明アセンブリを製造する方法 |
JP2022007896A (ja) * | 2019-11-29 | 2022-01-13 | 日亜化学工業株式会社 | 発光装置及びledパッケージ |
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US20130043502A1 (en) * | 2010-05-31 | 2013-02-21 | Panasonic Corporation | Light emitting device and method for manufacturing the same |
JP6034175B2 (ja) * | 2012-01-10 | 2016-11-30 | ローム株式会社 | Ledモジュール |
US20140208689A1 (en) | 2013-01-25 | 2014-07-31 | Renee Joyal | Hypodermic syringe assist apparatus and method |
US20140361680A1 (en) * | 2013-06-10 | 2014-12-11 | Q Technology, Inc. | Lighting system using dispersed fluorescence |
ES2781971T3 (es) | 2013-06-28 | 2020-09-09 | Lumileds Holding Bv | Dispositivo diodo emisor de luz |
CN106486490B (zh) * | 2015-08-31 | 2021-07-23 | 吴昭武 | 新型led面板组件、3d面板组件及3d显示屏 |
CN111883635B (zh) * | 2015-12-30 | 2023-06-30 | 晶元光电股份有限公司 | 发光装置以及其制造方法 |
US20240027038A1 (en) * | 2022-07-21 | 2024-01-25 | Hangzhou Hpwinner Opto Corporation | Light emitting diode assembly and plant lighting fixture |
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- 2010-01-15 CN CN201080004841XA patent/CN102282688A/zh active Pending
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JP2013543277A (ja) * | 2010-11-19 | 2013-11-28 | コーニンクレッカ フィリップス エヌ ヴェ | 発光デバイスのための点在キャリア |
JP2018022930A (ja) * | 2010-11-19 | 2018-02-08 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 発光デバイス及びその製造方法 |
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JP2016513335A (ja) * | 2013-01-25 | 2016-05-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 照明アセンブリ、及び照明アセンブリを製造する方法 |
JP2022007896A (ja) * | 2019-11-29 | 2022-01-13 | 日亜化学工業株式会社 | 発光装置及びledパッケージ |
JP7295437B2 (ja) | 2019-11-29 | 2023-06-21 | 日亜化学工業株式会社 | 発光装置 |
Also Published As
Publication number | Publication date |
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CN102282688A (zh) | 2011-12-14 |
TW201044644A (en) | 2010-12-16 |
WO2010082614A1 (ja) | 2010-07-22 |
JP5368809B2 (ja) | 2013-12-18 |
TWI489654B (zh) | 2015-06-21 |
US9379295B2 (en) | 2016-06-28 |
US20110278623A1 (en) | 2011-11-17 |
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