JP2010153707A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2010153707A JP2010153707A JP2008332453A JP2008332453A JP2010153707A JP 2010153707 A JP2010153707 A JP 2010153707A JP 2008332453 A JP2008332453 A JP 2008332453A JP 2008332453 A JP2008332453 A JP 2008332453A JP 2010153707 A JP2010153707 A JP 2010153707A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 239000004642 Polyimide Substances 0.000 claims description 20
- 229920001721 polyimide Polymers 0.000 claims description 20
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 Pt or Ta Chemical compound 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】半導体層2と、半導体層2上に設けられたAuからなる電極パッド10と、電極パッド10上にその端部が位置するように、半導体層2上及び電極パッド10上に設けられた窒化シリコン膜6と、電極パッド10の上面の一部及び窒化シリコン膜6の端部に接し、かつ電極パッド10の上面の他部が露出するように設けられたTi、Ta及びPtのいずれかからなる金属層14と、を具備する半導体装置。
【選択図】図1
Description
第1窒化シリコン膜 4
第2窒化シリコン膜 6
ドレイン電極 7
オーミック電極 8
電極パッド 10、20
ポリイミド層 12
Ti層 14
ワイヤ 16
Au層 18
ソース電極 22
ゲート電極 26
Claims (6)
- 半導体層と、
前記半導体層上に設けられたAuからなる電極パッドと、
前記電極パッド上にその端部が位置するように、前記半導体層上及び前記電極パッド上に設けられた窒化シリコン膜と、
前記電極パッドの上面の一部及び前記窒化シリコン膜の前記端部に接し、かつ前記電極パッドの上面の他部が露出するように設けられたTi、Ta及びPtのいずれかからなる金属層と、を具備することを特徴とする半導体装置。 - 前記金属層は、前記電極パッド上から前記窒化シリコン膜上にかけて連続的に設けられていることを特徴とする請求項1記載の半導体装置。
- 前記窒化シリコン膜上に設けられたポリイミド層またはベンゾシクロブテン層を具備することを特徴とする請求項1または2記載の半導体装置。
- 前記金属層は、前記電極パッド上から前記ポリイミド層上またはベンゾシクロブテン層上にかけて連続的に設けられていることを特徴とする請求項1から3いずれか一項記載の半導体装置。
- 前記第金属層と重なるように前記第金属層の上面に設けられたAu層を具備することを特徴とする請求項1から4いずれか一項記載の半導体装置。
- 前記金属層と離間し、前記露出された電極パッドの上面に接続されたワイヤを具備することを特徴とする請求項1から5いずれか一項記載の半導体装置。
Priority Applications (2)
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JP2008332453A JP5177551B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体装置 |
US12/647,221 US8269349B2 (en) | 2008-12-26 | 2009-12-24 | Semiconductor device |
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JP2008332453A JP5177551B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体装置 |
Publications (3)
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JP2010153707A true JP2010153707A (ja) | 2010-07-08 |
JP2010153707A5 JP2010153707A5 (ja) | 2012-02-09 |
JP5177551B2 JP5177551B2 (ja) | 2013-04-03 |
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JP2008332453A Active JP5177551B2 (ja) | 2008-12-26 | 2008-12-26 | 半導体装置 |
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JP (1) | JP5177551B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014220463A (ja) * | 2013-05-10 | 2014-11-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US10090220B2 (en) | 2014-08-11 | 2018-10-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
JP2018206896A (ja) * | 2017-06-01 | 2018-12-27 | 日本電信電話株式会社 | 化合物半導体集積回路及びその作製方法 |
JP2020501362A (ja) * | 2016-12-13 | 2020-01-16 | ウェービス インコーポレイテッド | 窒化物系電子素子およびその製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5855361B2 (ja) * | 2011-05-31 | 2016-02-09 | 三菱電機株式会社 | 半導体装置 |
US10804176B2 (en) * | 2019-02-21 | 2020-10-13 | Win Semiconductors Corp. | Low stress moisture resistant structure of semiconductor device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143785A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor device |
JPH04192333A (ja) * | 1990-11-24 | 1992-07-10 | Nec Corp | 半導体装置 |
JPH05243323A (ja) * | 1992-03-02 | 1993-09-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH0645316A (ja) * | 1992-07-23 | 1994-02-18 | Nec Corp | 半導体装置およびその製造方法 |
JPH11312670A (ja) * | 1998-04-28 | 1999-11-09 | Sony Corp | 半導体装置及びその製造方法 |
JP2001196413A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
JP2006303452A (ja) * | 2005-03-25 | 2006-11-02 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05136197A (ja) | 1991-11-13 | 1993-06-01 | Nec Kyushu Ltd | 半導体装置 |
US5985765A (en) * | 1998-05-11 | 1999-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for reducing bonding pad loss using a capping layer when etching bonding pad passivation openings |
JP2974022B1 (ja) * | 1998-10-01 | 1999-11-08 | ヤマハ株式会社 | 半導体装置のボンディングパッド構造 |
US6362531B1 (en) * | 2000-05-04 | 2002-03-26 | International Business Machines Corporation | Recessed bond pad |
-
2008
- 2008-12-26 JP JP2008332453A patent/JP5177551B2/ja active Active
-
2009
- 2009-12-24 US US12/647,221 patent/US8269349B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52143785A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Semiconductor device |
JPH04192333A (ja) * | 1990-11-24 | 1992-07-10 | Nec Corp | 半導体装置 |
JPH05243323A (ja) * | 1992-03-02 | 1993-09-21 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH0645316A (ja) * | 1992-07-23 | 1994-02-18 | Nec Corp | 半導体装置およびその製造方法 |
JPH11312670A (ja) * | 1998-04-28 | 1999-11-09 | Sony Corp | 半導体装置及びその製造方法 |
JP2001196413A (ja) * | 2000-01-12 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置、該半導体装置の製造方法、cmp装置、及びcmp方法 |
JP2006303452A (ja) * | 2005-03-25 | 2006-11-02 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014220463A (ja) * | 2013-05-10 | 2014-11-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US9583412B2 (en) | 2013-05-10 | 2017-02-28 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device |
US10090220B2 (en) | 2014-08-11 | 2018-10-02 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
JP2020501362A (ja) * | 2016-12-13 | 2020-01-16 | ウェービス インコーポレイテッド | 窒化物系電子素子およびその製造方法 |
US11037888B2 (en) | 2016-12-13 | 2021-06-15 | Wavice Inc. | Nitride-based electronic device and method for manufacturing same |
JP2018206896A (ja) * | 2017-06-01 | 2018-12-27 | 日本電信電話株式会社 | 化合物半導体集積回路及びその作製方法 |
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