JP2010034386A - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
- Publication number
- JP2010034386A JP2010034386A JP2008196184A JP2008196184A JP2010034386A JP 2010034386 A JP2010034386 A JP 2010034386A JP 2008196184 A JP2008196184 A JP 2008196184A JP 2008196184 A JP2008196184 A JP 2008196184A JP 2010034386 A JP2010034386 A JP 2010034386A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- base
- lead
- semiconductor device
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 230000003287 optical effect Effects 0.000 title claims abstract description 58
- 239000012212 insulator Substances 0.000 claims abstract description 4
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 26
- 239000011521 glass Substances 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】 キャップとベースで構成される光半導体装置であって、ベースの外面から内面に貫通した複数の開口を有し、ベースの内面に端部が突出するリードとリードの側面を覆う絶縁体が各開口に挿入され、リードとベースが絶縁されている金属パッケージと、ベースの内面に裏面が接着され、表面に金属パターンが形成された絶縁フィルムと、ベース上または前記絶縁フィルム上に配置された半導体部品とを備え、絶縁フィルムが、リードの側面近傍まで開口をカバーしていることを特徴とする光半導体装置。
【選択図】 図5
Description
2 キャップ
3 ベース
3b 部品配置面
4 リード
4b 開口
6 フォトダイオード
7 サブマウント
8、8b 半導体部品
9 パッシブ部品
10 金属ワイヤ
12 ガラス焼結体
14 絶縁フィルム(多層フィルム)
17 金属パターン(GNDパターン)
18 金属パターン(配線パターン、マイクロストリップライン)
21 スルーホール
22 裏面金属パターン
25 層間配線
Claims (4)
- キャップとベースで構成される光半導体装置であって、
前記ベースの外面から内面に貫通した複数の開口を有し、前記ベースの内面に端部が突出するリードと、前記リードの側面を覆う絶縁体と、が前記各開口に挿入され、前記リードと前記ベースが絶縁されている金属パッケージと、
前記ベースの内面に裏面が接着され、表面に金属パターンが形成された絶縁フィルムと、
前記ベース上、または前記絶縁フィルム上に配置された半導体部品と、
を備え、
前記絶縁フィルムが、前記リードの側面近傍まで前記開口をカバーしていることを特徴とする光半導体装置。 - 前記絶縁フィルム上に形成された金属パターンは、前記半導体部品と、前記リードと、の間を配線するパターンであり、
前記半導体部品または前記リードと、前記金属パターンと、の間は、金属ワイヤで接続され、
前記金属パターンと、前記金属ワイヤとの接続点においてインピーダンスの整合が取られ、所定の周波数帯域における電気信号の反射を低減したことを特徴とする請求項1に記載の光半導体装置。 - 前記ベースの内面に接着する裏面の全面または一部に形成された裏面金属パターンと、
前記裏面金属パターンと表面に形成された金属パターンとの間を電気的に接続する少なくとも1以上のスルーホールと、
を有する絶縁フィルムを備えることを特徴とする請求項1または2に記載の光半導体装置。 - 複数の絶縁フィルムを積層した多層絶縁フィルムであって、
前記各絶縁フィルムの間に挿入された層間配線と、
前記多層絶縁フィルムの表面または裏面に設けられた金属パターンと、前記層間配線と、を電気的に接続するスルーホールと、
を有する多層絶縁フィルムを備えることを特徴とする請求項1ないし3のいずれかに記載の光半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008196184A JP2010034386A (ja) | 2008-07-30 | 2008-07-30 | 光半導体装置 |
US12/462,125 US8008761B2 (en) | 2008-07-30 | 2009-07-29 | Optical semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008196184A JP2010034386A (ja) | 2008-07-30 | 2008-07-30 | 光半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014139440A Division JP6008905B2 (ja) | 2014-07-07 | 2014-07-07 | 光半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010034386A true JP2010034386A (ja) | 2010-02-12 |
Family
ID=41607487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008196184A Pending JP2010034386A (ja) | 2008-07-30 | 2008-07-30 | 光半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8008761B2 (ja) |
JP (1) | JP2010034386A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020250345A1 (ja) * | 2019-06-12 | 2020-12-17 | 三菱電機株式会社 | 光受信モジュール |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018084541A2 (ko) * | 2016-11-01 | 2018-05-11 | 김정수 | 파장 가변필터, 파장 가변필터를 이용한 광 수신기 및 광 수신방법 |
JP7263697B2 (ja) * | 2018-04-13 | 2023-04-25 | 住友電気工業株式会社 | 受光装置 |
JP2021027136A (ja) * | 2019-08-02 | 2021-02-22 | CIG Photonics Japan株式会社 | 光モジュール |
JP2021044437A (ja) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | 受光装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003069051A (ja) * | 2002-08-16 | 2003-03-07 | Sumitomo Electric Ind Ltd | 光受信モジュ−ル |
JP2005012224A (ja) * | 2003-06-20 | 2005-01-13 | Samsung Electronics Co Ltd | TO−Can構造の光受信モジュール |
JP2005159036A (ja) * | 2003-11-26 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 光送受信モジュール |
JP2007042756A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 光デバイスと光通信装置 |
JP2007042757A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 光デバイスとその製造方法および光通信装置 |
JP2007287767A (ja) * | 2006-04-13 | 2007-11-01 | Sumitomo Electric Ind Ltd | 光サブアセンブリ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL178376C (nl) * | 1978-06-19 | 1986-03-03 | Philips Nv | Koppelelement met een lichtbron en een lens. |
US5252856A (en) * | 1990-09-26 | 1993-10-12 | Nec Corporation | Optical semiconductor device |
JPH07333055A (ja) * | 1994-06-03 | 1995-12-22 | Matsushita Electric Ind Co Ltd | 光検出器 |
JP2800761B2 (ja) | 1996-02-23 | 1998-09-21 | 日本電気株式会社 | マルチチップ半導体装置 |
JPH104510A (ja) | 1996-06-17 | 1998-01-06 | Sony Corp | カメラ |
JP3830583B2 (ja) * | 1996-08-15 | 2006-10-04 | 富士通株式会社 | 光半導体アセンブリ |
JP2003258272A (ja) * | 2002-02-27 | 2003-09-12 | Sumitomo Electric Ind Ltd | 光受信モジュール |
-
2008
- 2008-07-30 JP JP2008196184A patent/JP2010034386A/ja active Pending
-
2009
- 2009-07-29 US US12/462,125 patent/US8008761B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003069051A (ja) * | 2002-08-16 | 2003-03-07 | Sumitomo Electric Ind Ltd | 光受信モジュ−ル |
JP2005012224A (ja) * | 2003-06-20 | 2005-01-13 | Samsung Electronics Co Ltd | TO−Can構造の光受信モジュール |
JP2005159036A (ja) * | 2003-11-26 | 2005-06-16 | Matsushita Electric Ind Co Ltd | 光送受信モジュール |
JP2007042756A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 光デバイスと光通信装置 |
JP2007042757A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 光デバイスとその製造方法および光通信装置 |
JP2007287767A (ja) * | 2006-04-13 | 2007-11-01 | Sumitomo Electric Ind Ltd | 光サブアセンブリ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020250345A1 (ja) * | 2019-06-12 | 2020-12-17 | 三菱電機株式会社 | 光受信モジュール |
JPWO2020250345A1 (ja) * | 2019-06-12 | 2021-10-21 | 三菱電機株式会社 | 光受信モジュール |
CN113924658A (zh) * | 2019-06-12 | 2022-01-11 | 三菱电机株式会社 | 光接收模块 |
CN113924658B (zh) * | 2019-06-12 | 2023-09-05 | 三菱电机株式会社 | 光接收模块 |
Also Published As
Publication number | Publication date |
---|---|
US8008761B2 (en) | 2011-08-30 |
US20100025843A1 (en) | 2010-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6070908B2 (ja) | 電子機器 | |
JP5104251B2 (ja) | 光モジュール | |
JP4776466B2 (ja) | フレキシブル基板付き光モジュール | |
JP5881752B2 (ja) | トランジスタアウトラインハウジング及びその製造方法 | |
US7306377B2 (en) | Integrated optical sub-assembly having epoxy chip package | |
JP5654288B2 (ja) | 光モジュール及び高周波モジュール | |
US11340412B2 (en) | Optical module | |
US9588313B2 (en) | Optical device package and optical device apparatus | |
US9900991B2 (en) | Flexible printed circuit board for optical module | |
JP2021027136A (ja) | 光モジュール | |
JP2010034386A (ja) | 光半導体装置 | |
JP2021174877A (ja) | 光モジュール | |
JP2008226988A (ja) | 光電変換モジュール | |
JP2007287767A (ja) | 光サブアセンブリ | |
JP7057357B2 (ja) | 光モジュール | |
CN110637399B (zh) | 光模块及其制造方法 | |
JP4699138B2 (ja) | 光半導体素子モジュール及びその製造方法 | |
JP6008905B2 (ja) | 光半導体装置 | |
JP2014053445A (ja) | 回路基板および複合モジュール | |
JP2013030549A (ja) | 発光モジュール及びチップ部品実装用部材 | |
JP4127652B2 (ja) | 光モジュール | |
JP6769795B2 (ja) | 電子回路基板 | |
JP2004319843A (ja) | 光モジュール及びその製造方法、光通信装置、電子機器 | |
JP2005209956A (ja) | 光モジュール | |
JP2016015399A (ja) | 電子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120919 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130701 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130718 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130724 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130823 |