JP2010021337A - 半導体受光素子 - Google Patents
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Abstract
【解決手段】n型InP基板10(半導体基板)の下面に、n型InP基板10側から順番に、n型の第1の多層反射層12、n型の第1の光共振層14、n型の第2の多層反射層16、i型InGaAsの光吸収層18及びアノード電極22(反射膜)が形成されている。n型InP基板10の上面に反射防止膜26が形成されている。第1の光共振層14は、第1,第2の多層反射層12,16を構成する各半導体層よりも厚い。第2の多層反射層16とアノード電極22の間に有る膜の光学膜厚を第1の光学膜厚Lopt1とし、第1の光共振層14の光学膜厚を第2の光学膜厚Lopt2とすると、Lopt1とLopt2は異なる。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体受光素子を示す断面図である。この半導体受光素子は裏面入射型の共振型フォトダイオードである。
Lopt1=nλ/4 ・・・(1)
ここで、nは整数である。これにより、図9のPDでは、ある特定の波長λ1のみで高い量子効率が得られる。
Lopt1≠Lopt2 ・・・(2)
これにより、本実施の形態では、波長λ1とは異なる波長λ2でも量子効率のピークを持つ。このように量子効率のピーク波長が2つに分散されるため、量子効率の波長依存性を低減することができる。具体的には、第2の光学膜厚Lopt2は、第1の光学膜厚Lopt1の数分の1から数倍の範囲である。
Lopt1=(2n−1)λ/4 ・・・(3)
Lopt2=2nλ/4 ・・・(4)
Lopt1=2nλ/4 ・・・(5)
Lopt2=(2n−1)λ/4 ・・・(6)
N1<N2 ・・・(7)
これにより、第1の共振モードによる量子効率改善効果が損なわれないため、高い量子効率を得ることができる。
図3は、本発明の実施の形態2に係る半導体受光素子を示す断面図である。n型InP基板10と第1の多層反射層12の間に、n型InP基板10側から順番に、第3の多層反射層30及び第2の光共振層32が更に形成されている。第2の光共振層32は、第1〜第3の多層反射層12,16,30を構成する各半導体層よりも厚い。その他の構成は実施の形態1と同様である。
Lopt1≠Lopt2≠Lopt3 ・・・(8)
これにより、本実施の形態では、波長λ1,λ2とは異なる波長λ3でも量子効率のピークを持つ。このように量子効率のピーク波長が3つに分散されるため、より広い波長範囲で量子効率の波長依存性を低減することができる。
図4は、本発明の実施の形態3に係る半導体受光素子を示す断面図である。実施の形態1の第1の光共振層14を、バンドギャップ波長が入射光の波長よりも長い第1の光共振層34に置き換えたものである。この吸収性の第1の光共振層34で発生した電子と正孔を光電流として取り出せば、より高い量子効率を得ることができる。
図5は、本発明の実施の形態4に係る半導体受光素子を示す断面図である。n型InP基板10の下面に、n型InP基板10側から順番に、第1の多層反射層12、第1の光共振層14、第2の多層反射層16、光吸収層18、第3の多層反射層36、第2の光共振層38及びアノード電極22(反射膜)が形成されている。その他の構成は実施の形態1と同様である。
図6は、本発明の実施の形態5に係る半導体受光素子を示す断面図である。この半導体受光素子は表面入射型の共振型フォトダイオードである。
図7は、本発明の実施の形態6に係る半導体受光素子を示す断面図である。第3の多層反射層52が無く、光共振層50の上面は空気に晒されている点以外は実施の形態5と同じである。空気と光共振層50は屈折率が異なるため、光共振層50の上面(光入射面)で光が反射し、第3の多層反射層52と同様に機能する。なお、光共振層50の上面に絶縁膜等の反射膜や反射抑制膜を設けて反射率を調整してもよい。
12,40 第1の多層反射層
14,34 第1の光共振層
16,48 第2の多層反射層
18,44 光吸収層
22 アノード電極(反射膜)
26 反射防止膜
30,36,52 第3の多層反射層
32,38 第2の光共振層
50 光共振層
Claims (9)
- 半導体基板の下面に、前記半導体基板側から順番に、第1の多層反射層、第1の光共振層、第2の多層反射層、光吸収層及び反射膜が形成され、
前記半導体基板の上面に反射防止膜が形成され、
前記第1の光共振層は、前記第1,第2の多層反射層を構成する各半導体層よりも厚く、
前記第2の多層反射層と前記反射膜の間に有る膜の光学膜厚を第1の光学膜厚とし、前記第1の光共振層の光学膜厚を第2の光学膜厚とすると、前記第1の光学膜厚と前記第2の光学膜厚は異なることを特徴とする半導体受光素子。 - nを整数、λを入射光の波長とすると、前記第1の光学膜厚は(2n−1)λ/4であり、前記第2の光学膜厚は2nλ/4であることを特徴とする請求項1に記載の半導体受光素子。
- nを整数、λを入射光の波長とすると、前記第1の光学膜厚は2nλ/4であり、前記第2の光学膜厚は(2n−1)λ/4であることを特徴とする請求項1に記載の半導体受光素子。
- 前記第1の多層反射層の反射率は、前記第2の多層反射層の反射率よりも小さいことを特徴とする請求項1に記載の半導体受光素子。
- 前記半導体基板と前記第1の多層反射層の間に、前記半導体基板側から順番に、第3の多層反射層及び第2の光共振層が更に形成され、
前記第2の光共振層は、前記第1〜第3の多層反射層を構成する各半導体層よりも厚く、
前記第2の光共振層の光学膜厚は、前記第1,第2の光学膜厚とは異なることを特徴とする請求項1に記載の半導体受光素子。 - 前記第1の光共振層のバンドギャップ波長が入射光の波長よりも長いことを特徴とする請求項1に記載の半導体受光素子。
- 半導体基板の下面に、前記半導体基板側から順番に、第1の多層反射層、第1の光共振層、第2の多層反射層、光吸収層、第3の多層反射層、第2の光共振層及び反射膜が形成され、
前記半導体基板の上面に反射防止膜が形成され、
前記第1,第2の光共振層は、前記第1〜第3の多層反射層を構成する各半導体層よりも厚く、
前記第2の多層反射層と前記第3の多層反射層の間に有る膜の光学膜厚、前記第1の光共振層の光学膜厚、前記第2の光共振層の光学膜厚はそれぞれ異なることを特徴とする半導体受光素子。 - 半導体基板の上面に、前記半導体基板側から順番に、第1の多層反射層、光吸収層、第2の多層反射層、光共振層及び第3の多層反射層が形成され、
前記光共振層は、前記第1,第2の多層反射層を構成する各半導体層よりも厚く、
前記第1の多層反射層と前記第2の多重反射層の間に有る膜の光学膜厚を第1の光学膜厚とし、前記光共振層の光学膜厚を第2の光学膜厚とすると、前記第1の光学膜厚と前記第2の光学膜厚は異なることを特徴とする半導体受光素子。 - 半導体基板の上面に、前記半導体基板側から順番に、第1の多層反射層、光吸収層、第2の多層反射層及び光共振層が形成され、
前記光共振層は、前記第1の多層反射層を構成する各半導体層よりも厚く、
前記光共振層の上面は空気に晒され、
前記第1の多層反射層と前記第2の多重反射層の間に有る膜の光学膜厚を第1の光学膜厚とし、前記光共振層の光学膜厚を第2の光学膜厚とすると、前記第1の光学膜厚と前記第2の光学膜厚は異なることを特徴とする半導体受光素子。
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US12/327,861 US8035181B2 (en) | 2008-07-10 | 2008-12-04 | Semiconductor photodetector with improved quantum efficiency as a function of detected light wavelength |
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JP2018148220A (ja) * | 2018-04-20 | 2018-09-20 | ソニー株式会社 | 撮像素子および撮像装置 |
CN112071938A (zh) * | 2020-08-07 | 2020-12-11 | 西安理工大学 | 具有中红外宽带光吸收特性的超导纳米线单光子探测器 |
JP2021106189A (ja) * | 2019-12-26 | 2021-07-26 | キヤノン株式会社 | 光電変換素子、光電変換システム |
WO2021246146A1 (ja) * | 2020-06-04 | 2021-12-09 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
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CN103579405B (zh) * | 2012-09-10 | 2015-09-30 | 清华大学 | 具有强吸收结构的高速snspd及其制备方法 |
US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
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JP2015050446A (ja) | 2013-09-05 | 2015-03-16 | ソニー株式会社 | 撮像素子および撮像装置 |
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JP2018148220A (ja) * | 2018-04-20 | 2018-09-20 | ソニー株式会社 | 撮像素子および撮像装置 |
JP2021106189A (ja) * | 2019-12-26 | 2021-07-26 | キヤノン株式会社 | 光電変換素子、光電変換システム |
US11843068B2 (en) | 2019-12-26 | 2023-12-12 | Canon Kabushiki Kaisha | Photoelectric conversion element and photoelectric conversion system |
WO2021246146A1 (ja) * | 2020-06-04 | 2021-12-09 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
CN112071938A (zh) * | 2020-08-07 | 2020-12-11 | 西安理工大学 | 具有中红外宽带光吸收特性的超导纳米线单光子探测器 |
CN112071938B (zh) * | 2020-08-07 | 2022-07-15 | 西安理工大学 | 具有中红外宽带光吸收特性的超导纳米线单光子探测器 |
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JP5239568B2 (ja) | 2013-07-17 |
US20100006967A1 (en) | 2010-01-14 |
US8035181B2 (en) | 2011-10-11 |
CN101626043B (zh) | 2011-09-14 |
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