JP5705859B2 - アバランシェタイプのフォトダイオード - Google Patents
アバランシェタイプのフォトダイオード Download PDFInfo
- Publication number
- JP5705859B2 JP5705859B2 JP2012530843A JP2012530843A JP5705859B2 JP 5705859 B2 JP5705859 B2 JP 5705859B2 JP 2012530843 A JP2012530843 A JP 2012530843A JP 2012530843 A JP2012530843 A JP 2012530843A JP 5705859 B2 JP5705859 B2 JP 5705859B2
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- Prior art keywords
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- bragg
- absorption layer
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- Prior art date
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- Expired - Fee Related
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- 238000010521 absorption reaction Methods 0.000 claims description 24
- 230000000737 periodic effect Effects 0.000 claims description 17
- 238000001228 spectrum Methods 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 71
- 239000000463 material Substances 0.000 description 12
- 239000002800 charge carrier Substances 0.000 description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
Claims (1)
- 入射光のための開口部(16)を備え、倍増層(7)、電界制御層(8)、吸収層(10)を含み、前記開口部から下方に多数の種々の半導体層を備え、前記吸収層が光を吸収するように配置されており、前記開口部から前記吸収層(10)を通過したフォトンを反射し、前記吸収層に戻すように配置されている少なくとも1つのブラッグミラー(14)が前記吸収層(10)の下に存在する、表面光入射型アバランシュフォトダイオード(APD)であって、
前記ブラッグミラー(14)は、InP層とAlInGaAs層とが交互に配置された周期的構造体から構成されており、前記InP層の厚さおよび前記AlInGaAs層の厚さは、所定の波長間隔内の光を反射するようになっており、
一方が他方の上に載るようになっている、前記ブラッグミラー(14)を含む少なくとも2つのブラッグミラー(14、15)が存在し、前記少なくとも2つのブラッグミラーのうちの1つの周期的長さは、他のブラッグミラーの周期的長さと異なり、
前記少なくとも2つのブラッグミラーは異なる反射スペクトルを有し、前記少なくとも2つのブラッグミラーの反射スペクトルは共に、より広い反射スペクトルを生じさせるように配列され、
前記少なくとも2つのブラッグミラー(14、15)のうちの一方は、1つのブラッグミラーだけを有するフォトダイオードよりも2.5%短い周期的長さを有し、他方のブラッグミラー(14、15)は、1つのブラッグミラーだけを有するフォトダイオードよりも2.5%長い周期的長さを有する
ことを特徴とする表面光入射型アバランシュフォトダイオード(APD)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0950698-1 | 2009-09-24 | ||
SE0950698A SE534345C2 (sv) | 2009-09-24 | 2009-09-24 | Fotodiod av typen lavinfotodiod. |
PCT/SE2010/050936 WO2011037517A1 (en) | 2009-09-24 | 2010-09-02 | Photodiode of the type avalanche photodiode |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014217711A Division JP2015039032A (ja) | 2009-09-24 | 2014-10-24 | アバランシェタイプのフォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013506287A JP2013506287A (ja) | 2013-02-21 |
JP5705859B2 true JP5705859B2 (ja) | 2015-04-22 |
Family
ID=43796076
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012530843A Expired - Fee Related JP5705859B2 (ja) | 2009-09-24 | 2010-09-02 | アバランシェタイプのフォトダイオード |
JP2014217711A Abandoned JP2015039032A (ja) | 2009-09-24 | 2014-10-24 | アバランシェタイプのフォトダイオード |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014217711A Abandoned JP2015039032A (ja) | 2009-09-24 | 2014-10-24 | アバランシェタイプのフォトダイオード |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120235267A1 (ja) |
EP (1) | EP2481097A4 (ja) |
JP (2) | JP5705859B2 (ja) |
SE (1) | SE534345C2 (ja) |
WO (1) | WO2011037517A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11251219B2 (en) * | 2020-03-10 | 2022-02-15 | Sensors Unlimited, Inc. | Low capacitance photo detectors |
CN113707733A (zh) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | 一种波导型Ge/Si雪崩光电二极管及制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2775355B1 (fr) * | 1998-02-26 | 2000-03-31 | Alsthom Cge Alcatel | Reflecteur optique en semi-conducteur et procede de fabrication |
US6252896B1 (en) * | 1999-03-05 | 2001-06-26 | Agilent Technologies, Inc. | Long-Wavelength VCSEL using buried bragg reflectors |
JP2003152217A (ja) * | 2001-11-16 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 受光素子を内蔵する半導体装置 |
JP2004327886A (ja) * | 2003-04-28 | 2004-11-18 | Nippon Sheet Glass Co Ltd | 半導体受光素子 |
JP2005203419A (ja) * | 2004-01-13 | 2005-07-28 | Hitachi Cable Ltd | 発光素子用エピタキシャルウェハ |
JP4611066B2 (ja) * | 2004-04-13 | 2011-01-12 | 三菱電機株式会社 | アバランシェフォトダイオード |
JP4370203B2 (ja) * | 2004-05-25 | 2009-11-25 | 三菱電機株式会社 | 半導体素子 |
US7126160B2 (en) * | 2004-06-18 | 2006-10-24 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
US7119377B2 (en) * | 2004-06-18 | 2006-10-10 | 3M Innovative Properties Company | II-VI/III-V layered construction on InP substrate |
WO2006123410A1 (ja) * | 2005-05-18 | 2006-11-23 | Mitsubishi Denki Kabushiki Kaisha | アバランシェフォトダイオード |
-
2009
- 2009-09-24 SE SE0950698A patent/SE534345C2/sv not_active IP Right Cessation
-
2010
- 2010-09-02 WO PCT/SE2010/050936 patent/WO2011037517A1/en active Application Filing
- 2010-09-02 US US13/497,546 patent/US20120235267A1/en not_active Abandoned
- 2010-09-02 EP EP10819111.5A patent/EP2481097A4/en not_active Withdrawn
- 2010-09-02 JP JP2012530843A patent/JP5705859B2/ja not_active Expired - Fee Related
-
2014
- 2014-10-24 JP JP2014217711A patent/JP2015039032A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
SE534345C2 (sv) | 2011-07-19 |
WO2011037517A1 (en) | 2011-03-31 |
JP2013506287A (ja) | 2013-02-21 |
EP2481097A1 (en) | 2012-08-01 |
SE0950698A1 (sv) | 2011-03-25 |
JP2015039032A (ja) | 2015-02-26 |
US20120235267A1 (en) | 2012-09-20 |
EP2481097A4 (en) | 2018-01-24 |
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